WO2012132064A1 - Élément photovoltaïque - Google Patents

Élément photovoltaïque Download PDF

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Publication number
WO2012132064A1
WO2012132064A1 PCT/JP2011/072452 JP2011072452W WO2012132064A1 WO 2012132064 A1 WO2012132064 A1 WO 2012132064A1 JP 2011072452 W JP2011072452 W JP 2011072452W WO 2012132064 A1 WO2012132064 A1 WO 2012132064A1
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WO
WIPO (PCT)
Prior art keywords
layer
amorphous silicon
type amorphous
transparent conductive
silicon layer
Prior art date
Application number
PCT/JP2011/072452
Other languages
English (en)
Japanese (ja)
Inventor
豊 桐畑
藤田　和範
嶋田　聡
三島　孝博
仁 坂田
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2012132064A1 publication Critical patent/WO2012132064A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

L'invention concerne un élément photovoltaïque (10) comprenant un stratifié i-n (21) stratifié sur la surface d'une première région de surface d'un substrat de silicium monocristallin de type n (18) ; un stratifié i-p (31) stratifié chevauchant une seconde région de la surface et une partie du stratifié i-n (21) ; et une couche conductrice transparente (20) disposée entre une partie du stratifié i-n (21) et le stratifié in-n (21).
PCT/JP2011/072452 2011-03-25 2011-09-29 Élément photovoltaïque WO2012132064A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011067832 2011-03-25
JP2011-067832 2011-03-25

Publications (1)

Publication Number Publication Date
WO2012132064A1 true WO2012132064A1 (fr) 2012-10-04

Family

ID=46929871

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/072452 WO2012132064A1 (fr) 2011-03-25 2011-09-29 Élément photovoltaïque

Country Status (1)

Country Link
WO (1) WO2012132064A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168180A1 (fr) * 2017-03-17 2018-09-20 株式会社カネカ Cellule solaire et son procédé de fabrication

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009096539A1 (fr) * 2008-01-30 2009-08-06 Kyocera Corporation Élément de batterie solaire et procédé de fabrication d'élément de batterie solaire
JP2009200267A (ja) * 2008-02-21 2009-09-03 Sanyo Electric Co Ltd 太陽電池
WO2010113750A1 (fr) * 2009-03-30 2010-10-07 三洋電機株式会社 Pile solaire
JP2010258043A (ja) * 2009-04-21 2010-11-11 Sanyo Electric Co Ltd 太陽電池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009096539A1 (fr) * 2008-01-30 2009-08-06 Kyocera Corporation Élément de batterie solaire et procédé de fabrication d'élément de batterie solaire
JP2009200267A (ja) * 2008-02-21 2009-09-03 Sanyo Electric Co Ltd 太陽電池
WO2010113750A1 (fr) * 2009-03-30 2010-10-07 三洋電機株式会社 Pile solaire
JP2010258043A (ja) * 2009-04-21 2010-11-11 Sanyo Electric Co Ltd 太陽電池

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168180A1 (fr) * 2017-03-17 2018-09-20 株式会社カネカ Cellule solaire et son procédé de fabrication

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