WO2012126434A3 - 数据处理的方法、闪存及终端 - Google Patents
数据处理的方法、闪存及终端 Download PDFInfo
- Publication number
- WO2012126434A3 WO2012126434A3 PCT/CN2012/076108 CN2012076108W WO2012126434A3 WO 2012126434 A3 WO2012126434 A3 WO 2012126434A3 CN 2012076108 W CN2012076108 W CN 2012076108W WO 2012126434 A3 WO2012126434 A3 WO 2012126434A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- memory
- memory units
- negative
- gate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280001571.6A CN102986029B (zh) | 2012-05-25 | 2012-05-25 | 数据处理的方法、闪存及终端 |
PCT/CN2012/076108 WO2012126434A2 (zh) | 2012-05-25 | 2012-05-25 | 数据处理的方法、闪存及终端 |
EP12761495.6A EP2840610B1 (en) | 2012-05-25 | 2012-05-25 | Data processing method, flash memory and terminal |
US14/329,460 US9281063B2 (en) | 2012-05-25 | 2014-07-11 | Method for processing data, flash memory, and terminal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2012/076108 WO2012126434A2 (zh) | 2012-05-25 | 2012-05-25 | 数据处理的方法、闪存及终端 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/329,460 Continuation US9281063B2 (en) | 2012-05-25 | 2014-07-11 | Method for processing data, flash memory, and terminal |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012126434A2 WO2012126434A2 (zh) | 2012-09-27 |
WO2012126434A3 true WO2012126434A3 (zh) | 2012-11-08 |
Family
ID=46879810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2012/076108 WO2012126434A2 (zh) | 2012-05-25 | 2012-05-25 | 数据处理的方法、闪存及终端 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9281063B2 (zh) |
EP (1) | EP2840610B1 (zh) |
CN (1) | CN102986029B (zh) |
WO (1) | WO2012126434A2 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10055351B1 (en) | 2016-06-29 | 2018-08-21 | EMC IP Holding Company LLC | Low-overhead index for a flash cache |
US10261704B1 (en) | 2016-06-29 | 2019-04-16 | EMC IP Holding Company LLC | Linked lists in flash memory |
US10331561B1 (en) | 2016-06-29 | 2019-06-25 | Emc Corporation | Systems and methods for rebuilding a cache index |
US10146438B1 (en) | 2016-06-29 | 2018-12-04 | EMC IP Holding Company LLC | Additive library for data structures in a flash memory |
US10089025B1 (en) | 2016-06-29 | 2018-10-02 | EMC IP Holding Company LLC | Bloom filters in a flash memory |
US10037164B1 (en) | 2016-06-29 | 2018-07-31 | EMC IP Holding Company LLC | Flash interface for processing datasets |
US10445008B2 (en) * | 2017-09-15 | 2019-10-15 | Macronix International Co., Ltd. | Data management method for memory and memory apparatus |
CN114175000A (zh) | 2019-07-31 | 2022-03-11 | 惠普发展公司,有限责任合伙企业 | 基于要擦除的比特的确定而对闪速存储器的更新 |
US11704035B2 (en) * | 2020-03-30 | 2023-07-18 | Pure Storage, Inc. | Unified storage on block containers |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100238733A1 (en) * | 2009-03-23 | 2010-09-23 | Kabushiki Kaisha Toshiba | Nand flash memory |
CN102339644A (zh) * | 2011-07-27 | 2012-02-01 | 聚辰半导体(上海)有限公司 | 存储器及其操作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2794974B2 (ja) * | 1991-04-10 | 1998-09-10 | 日本電気株式会社 | 不揮発性半導体記憶装置の起動方法 |
US6418060B1 (en) * | 2002-01-03 | 2002-07-09 | Ememory Technology Inc. | Method of programming and erasing non-volatile memory cells |
TW565910B (en) * | 2002-10-24 | 2003-12-11 | Amic Technology Corp | Negative voltage switch and related flash memory for transmitting negative voltage with triple-well transistors |
US7907450B2 (en) * | 2006-05-08 | 2011-03-15 | Macronix International Co., Ltd. | Methods and apparatus for implementing bit-by-bit erase of a flash memory device |
KR100871606B1 (ko) * | 2007-06-18 | 2008-12-02 | 삼성전자주식회사 | 비휘발성 메모리 소자의 프로그래밍 방법 및 이를 이용한낸드 플래시 메모리 소자의 구동 방법 |
CN102456745B (zh) * | 2010-10-22 | 2013-09-04 | 北京大学 | 一种快闪存储器及其制备方法和操作方法 |
-
2012
- 2012-05-25 EP EP12761495.6A patent/EP2840610B1/en not_active Not-in-force
- 2012-05-25 WO PCT/CN2012/076108 patent/WO2012126434A2/zh active Application Filing
- 2012-05-25 CN CN201280001571.6A patent/CN102986029B/zh not_active Expired - Fee Related
-
2014
- 2014-07-11 US US14/329,460 patent/US9281063B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100238733A1 (en) * | 2009-03-23 | 2010-09-23 | Kabushiki Kaisha Toshiba | Nand flash memory |
CN102339644A (zh) * | 2011-07-27 | 2012-02-01 | 聚辰半导体(上海)有限公司 | 存储器及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102986029B (zh) | 2015-07-22 |
US20140321210A1 (en) | 2014-10-30 |
CN102986029A (zh) | 2013-03-20 |
US9281063B2 (en) | 2016-03-08 |
WO2012126434A2 (zh) | 2012-09-27 |
EP2840610B1 (en) | 2019-04-03 |
EP2840610A2 (en) | 2015-02-25 |
EP2840610A4 (en) | 2015-06-03 |
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