WO2012124527A1 - Composition de pâte de résine pour lier un élément semi-conducteur, et dispositif à semi-conducteur - Google Patents

Composition de pâte de résine pour lier un élément semi-conducteur, et dispositif à semi-conducteur Download PDF

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Publication number
WO2012124527A1
WO2012124527A1 PCT/JP2012/055577 JP2012055577W WO2012124527A1 WO 2012124527 A1 WO2012124527 A1 WO 2012124527A1 JP 2012055577 W JP2012055577 W JP 2012055577W WO 2012124527 A1 WO2012124527 A1 WO 2012124527A1
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Prior art keywords
paste composition
resin paste
component
semiconductor element
methacrylate
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PCT/JP2012/055577
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English (en)
Japanese (ja)
Inventor
愉加吏 井上
山田 和彦
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日立化成工業株式会社
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Application filed by 日立化成工業株式会社 filed Critical 日立化成工業株式会社
Priority to JP2013504665A priority Critical patent/JPWO2012124527A1/ja
Priority to KR1020137024233A priority patent/KR20140018901A/ko
Priority to CN2012800131685A priority patent/CN103429688A/zh
Priority to SG2013068846A priority patent/SG193438A1/en
Publication of WO2012124527A1 publication Critical patent/WO2012124527A1/fr

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    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
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Definitions

  • the present invention relates to a resin paste composition for bonding a semiconductor element suitable for bonding a semiconductor element such as an IC or LSI and a support member such as a lead frame or a glass epoxy wiring board, and a semiconductor device using the same.
  • a semiconductor device is manufactured by bonding an element such as a semiconductor chip to a lead frame with a die bonding material.
  • the mounting method of semiconductor devices has shifted from the conventional pin insertion method to the surface mounting method in terms of high-density mounting, but reflow soldering that heats the entire substrate with infrared rays is used for mounting on the substrate. Since the package is heated to a high temperature of 200 ° C. or higher, the paste layer may be peeled off due to the rapid expansion of moisture absorbed.
  • the die bonding paste is required to have high adhesive strength between the Si chip and the lead frame.
  • metal powder such as gold powder, silver powder, copper powder, etc.
  • a resin paste composition using silver powder is mainly used (see Patent Document 1, etc.).
  • An object of the present invention is to provide a resin paste composition for adhering semiconductor elements having excellent die shear strength and storage stability while using aluminum powder as a conductive filler. Moreover, an object of this invention is to provide the semiconductor device manufactured using the said resin paste composition for semiconductor element adhesion
  • One embodiment of the present invention relates to a resin paste composition for adhering semiconductor elements containing a compound having a (meth) acryloyloxy group, a polymerization initiator, a flexible agent, an amine compound, and aluminum powder.
  • the resin paste composition for adhering semiconductor elements has excellent die shear strength and storage stability while using aluminum powder as the conductive filler by setting the composition to the above specific one.
  • the resin paste composition for adhering semiconductor elements does not substantially contain an aromatic epoxy resin.
  • the resin paste composition for adhering a semiconductor element according to the present embodiment does not substantially contain an aromatic epoxy resin and has the specific composition described above, while using aluminum powder as a conductive filler. However, excellent electrical conductivity is realized.
  • the flexible agent is preferably a rubber component.
  • the amine compound is preferably a dicyandiamide or an imidazole compound.
  • the shape of the aluminum powder is preferably granular, and the average particle size of the aluminum powder is preferably 2 to 10 ⁇ m.
  • the resin paste composition for adhering semiconductor elements of this embodiment may further contain silver powder. Since the resin paste composition for bonding semiconductor elements of this embodiment contains aluminum powder as a conductive filler, it has sufficient properties such as adhesive strength and storage stability without using a large amount of silver powder having a high rare value. Obtainable.
  • the shape of the silver powder is preferably flakes, and the average particle size of the silver powder is preferably 1 to 5 ⁇ m.
  • the ratio C 1 / C 2 of the content C 1 of the aluminum powder to the content C 2 of the silver powder can be set to 2/8 to 8/2 in mass ratio.
  • the compound having the (meth) acryloyloxy group is preferably a (meth) acrylic acid ester compound.
  • Another aspect of the present invention includes a support member, a semiconductor element, and an adhesive layer that is disposed between the support member and the semiconductor element and adheres the support member and the semiconductor element.
  • the present invention also relates to a semiconductor device including a cured product of the above semiconductor element bonding resin paste composition.
  • the semiconductor device of this aspect has sufficient reliability while using inexpensive aluminum powder because the support member and the semiconductor element are bonded by the resin paste composition for bonding a semiconductor element.
  • a resin paste composition for adhering semiconductor elements having excellent die shear strength and storage stability while using aluminum powder as a conductive filler.
  • attachment is provided.
  • (A) is a figure which shows the electron micrograph of VA-2000, (b) is No. It is a figure which shows the electron micrograph of 800F, (c) is No .. It is a figure which shows a 500M electron micrograph.
  • (A) is a figure which shows the electron micrograph of the mixed powder of the aluminum powder and silver powder in the resin paste composition obtained in Example 1, (b) is in the resin paste composition obtained in Reference Example 1. It is a figure which shows the electron micrograph of silver powder. It is a schematic diagram which shows the preparation methods of the test sample used for the measurement of volume resistivity.
  • (meth) acryl means acryl or methacryl. That is, “having a (meth) acryloyloxy group” means having an acryloyloxy group or a methacryloyloxy group.
  • the resin paste composition for bonding semiconductor elements according to the present embodiment is a compound having a (meth) acryloyloxy group (hereinafter referred to as “(A) component”).
  • a polymerization initiator hereinafter sometimes referred to as “component (B)”
  • component (C) a flexible agent
  • component (B) an amine compound
  • component (D) component aluminum powder
  • (E) component Since the resin paste composition contains the specific component, it has excellent die shear strength and storage stability.
  • the resin paste composition does not substantially contain an aromatic epoxy resin.
  • the volume resistivity may increase rapidly, and sufficient electrical conductivity may not be obtained.
  • the resin paste composition containing no aromatic epoxy resin has excellent electrical conductivity.
  • substantially does not contain an aromatic epoxy resin means that a small amount of aromatic epoxy resin may be present to such an extent that a rapid increase in volume resistivity is not observed.
  • the content of the aromatic epoxy resin may be 0.1% by mass or less, and preferably 0.05% by mass or less based on the total amount of the resin paste composition.
  • the component (A) is a component that can be said to be a matrix in which aluminum powder, silver powder or the like is dispersed, and has one or more (meth) acryloyloxy groups in one molecule.
  • the component (A) preferably contains at least one selected from the group consisting of acrylic ester compounds and methacrylic ester compounds.
  • the resin paste composition has more electrical conductivity, storage stability and die shear strength.
  • the coating workability and the mechanical characteristics are further improved, and it becomes more suitable for die bonding.
  • component (A) for example, a compound having one (meth) acryloyloxy group in one molecule (hereinafter sometimes referred to as “component (A-1)”), two compounds in one molecule A compound having a (meth) acryloyloxy group (hereinafter sometimes referred to as “component (A-2)”), a compound having three or more (meth) acryloyloxy groups in one molecule (hereinafter sometimes referred to as “component (A-3)”).
  • component (A-1) compound having one acryloyloxy group examples include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, t-butyl acrylate, amyl acrylate, and isoamyl.
  • Examples of the compound (A-1) having one methacryloyloxy group include, for example, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, t-butyl methacrylate, amyl Methacrylate, isoamyl methacrylate, hexyl methacrylate, heptyl methacrylate, octyl methacrylate, 2-ethylhexyl methacrylate, nonyl methacrylate, decyl methacrylate, isodecyl methacrylate, lauryl methacrylate, tridecyl methacrylate, hexadecyl methacrylate, stearyl methacrylate, isostearyl methacrylate, cyclohexyl methacrylate, Isobornyl methacrylate Over
  • the component (A-1) is preferably a compound represented by the following formula (I) from the viewpoint of die shear strength in a semiconductor device produced using a resin paste composition.
  • R 1 represents a hydrogen atom or a methyl group
  • R 2 represents an alicyclic group or a heterocyclic group
  • X represents an alkylene group having 1 to 5 carbon atoms
  • n represents an integer of 0 to 10 Show.
  • n is an integer of 2 or more, a plurality of Xs may be the same or different from each other.
  • the alicyclic group is a group having a structure in which carbon atoms are cyclically bonded
  • the heterocyclic group is a group having a structure in which carbon atoms and heteroatoms are bonded cyclically.
  • Examples of the alicyclic group include groups represented by the following formula (1-1), (1-2), (1-3) or (1-4).
  • R 3 , R 4 and R 5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
  • heterocyclic group examples include groups represented by the following formula (2-1), (2-2), (2-3) or (2-4).
  • R 6 , R 7 , R 8 , R 9 and R 10 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
  • Examples of the compound represented by the formula (I) include cyclohexyl acrylate, isobornyl acrylate, tricyclo [5.2.1.0 2,6 ] decyl acrylate, 2- (tricyclo) [5.2.1. 0 2,6 ] dec-3-en-8-yloxyethyl acrylate, 2- (tricyclo) [5.2.1.0 2,6 ] dec-3-en-9-yloxyethyl acrylate, glycidyl acrylate , Tetrahydrofurfuryl acrylate, dicyclopentenyloxyethyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, tetrahydropyranyl acrylate, dimethylaminoethyl acrylate, diethylaminoethyl acrylate, 1,2 , 2,6,6-pentamethylpiperidinyl acrylate, , 2,6,6-tetramethyl piperidinyl acrylate
  • Examples of the compound having two acryloyloxy groups in one molecule of the component (A-2) include ethylene glycol diacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1, 9-nonanediol diacrylate, 1,3-butanediol diacrylate, neopentyl glycol diacrylate, dimer diol diacrylate, dimethylol tricyclodecane diacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate , Polyethylene glycol diacrylate, tripropylene glycol diacrylate, polypropylene glycol diacrylate, bis (acryloxypropyl) polydimethylsiloxane Include dimethylsiloxane copolymer - down, bis (acryloxypropyl) methylsiloxane.
  • component (A-2) bisphenol A, bisphenol F or a reaction product of 1 mol of bisphenol AD and 2 mol of glycidyl acrylate; diacrylate of bisphenol A, bisphenol F or polyethylene oxide adduct of bisphenol AD; bisphenol A, The diacrylate etc. of the polypropylene oxide adduct of bisphenol F or bisphenol AD are also mentioned.
  • Examples of the compound having two methacryloyloxy groups in one molecule of the component (A-2) include ethylene glycol dimethacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol dimethacrylate, 1, 9-nonanediol dimethacrylate, 1,3-butanediol dimethacrylate, neopentyl glycol dimethacrylate, dimer diol dimethacrylate, dimethylol tricyclodecane dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate , Polyethylene glycol dimethacrylate, tripropylene glycol dimethacrylate, polypropylene glycol dimethacrylate, bis (methacrylo Shipuropiru) polydimethylsiloxane, bis (methacryloxypropyl) methylsiloxane - include
  • the component (A-2) includes a reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl methacrylate; dimethacrylate of bisphenol A, bisphenol F or polyethylene oxide adduct of bisphenol AD; The dimethacrylate etc. of the polypropylene oxide addition product of bisphenol F or bisphenol AD are also mentioned.
  • a compound represented by the following formula (II) is preferable from the viewpoint of die shear strength in a semiconductor device produced using a resin paste composition.
  • R 11 and R 12 each independently represent a hydrogen atom or a methyl group
  • R 13 and R 14 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms
  • Y 1 and Y 2 each represents Each independently represents an alkylene group having 1 to 5 carbon atoms
  • p and q each independently represents an integer of 1 to 20;
  • p is an integer of 2 or more
  • a plurality of Y 1 may be the same as or different from each other.
  • q is an integer of 2 or more
  • a plurality of Y 2 may be the same as or different from each other.
  • Examples of the compound having three or more acryloyloxy groups in one molecule of component (A-3) include trimethylolpropane triacrylate, ethylene oxide-modified trimethylolpropane triacrylate, propylene oxide-modified trimethylolpropane triacrylate, and ethylene oxide.
  • Examples of the compound having three or more methacryloyloxy groups in one molecule of the component (A-3) include trimethylolpropane trimethacrylate, ethylene oxide-modified trimethylolpropane trimethacrylate, propylene oxide-modified trimethylolpropane trimethacrylate, and ethylene oxide.
  • the component (A) one of the above compounds can be used alone, or two or more can be used in combination.
  • the component (A) is preferably used in combination with the component (A-1) and the component (A-2) from the viewpoint of improving the die shear strength and workability (viscosity) in a balanced manner.
  • the content of the component (A) is preferably 5 to 25% by mass and more preferably 10 to 20% by mass based on the total amount of the resin paste composition.
  • the content of the component (A) is 5 to 25% by mass, sufficient die shear strength can be obtained, and voids called voids are hardly generated in the cured product of the resin paste composition.
  • the component (B) is a component for polymerizing the component (A) to cure the resin paste composition, and is preferably a compound that generates radicals by heating and / or light irradiation.
  • a thermal-polymerization initiator and a photoinitiator are mentioned.
  • (B) component can be used individually by 1 type or in combination of 2 or more types.
  • thermal polymerization initiator examples include azo radical initiators such as azobisisobutyronitrile and 2,2′-azobis (4-methoxy-2,4-dimethylvaleronitrile); 1,1,3,3 -Tetramethylbutylperoxy-2-ethylhexanoate, 1,1-bis (t-butylperoxy) cyclohexane, 1,1-bis (t-butylperoxy) cyclododecane, di-t-butylperoxy Isophthalate, t-butyl perbenzoate, dicumyl peroxide, t-butyl cumyl peroxide, 2,5-dimethyl-2,5-di (t-butylperoxy) hexane, 2,5-dimethyl-2,5 -Di (t-butylperoxy) hexyne, cumene hydroperoxide, t-butylperoxy-2-ethylhexanoate, t-
  • Examples of the photopolymerization initiator include acetophenones such as 1-hydroxycyclohexyl phenyl ketone and 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-1-propanone; 2,4-dimethylthioxanthone, Thioxanthones such as 2,4-diethylthioxanthone, 2-chlorothioxanthone, and 2,4-diisopropylthioxanthone; Ketals such as acetophenone dimethyl ketal and benzyldimethyl ketal; Benzophenone, 4,4′-bis (diethylamino) benzophenone, 4- Benzophenones such as benzoyl-4′-methyldiphenyl sulfide; and phosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide.
  • acetophenones such as 1-hydroxycyclohexy
  • the 10-hour half-life temperature of the peroxide is preferably 60 to 170 ° C.
  • the half-life refers to the time required for the peroxide to decompose and the amount of active oxygen to be halved at a constant temperature.
  • the 10-hour half-life temperature is a half-life of 10 hours. Indicates temperature.
  • the half-life can be measured, for example, as follows. First, a peroxide solution having a concentration of 0.1 mol / l is prepared mainly using a solution that is relatively inert to radicals, such as benzene, and sealed in a glass tube subjected to nitrogen substitution. And it is immersed in the thermostat set to predetermined temperature, and is thermally decomposed. In general, the decomposition of peroxide can be treated approximately as a primary reaction. Therefore, the peroxide concentration x decomposed by the time t, the decomposition rate constant k, the time t, and the initial peroxide concentration a Then, the following formula (i) is established.
  • the content of the component (B) is preferably 0.1 to 10 parts by mass, and more preferably 2 to 8 parts by mass with respect to 100 parts by mass of the total amount of the component (A).
  • the content of the component (B) is 0.1 parts by mass or more, the curability of the resin paste composition is further improved.
  • the content of the component (B) exceeds 10 parts by mass, a large amount of volatile matter is generated when the resin paste composition is cured, and voids called voids tend to be easily generated in the cured product of the resin paste composition. is there.
  • a component can be used individually by 1 type or in combination of 2 or more types.
  • the content of component (B) is preferably 0.1 to 5% by mass, more preferably 0.6 to 1% by mass, based on the total amount of the resin paste composition.
  • the content of component (B) is 0.1% by mass or more, the curability of the resin paste composition is further improved.
  • the content of the component (B) exceeds 5% by mass, a large amount of volatile matter is generated when the resin paste composition is cured, and voids called voids tend to be generated in the cured product of the resin paste composition. is there.
  • the component (C) is a component that imparts flexibility to the cured product of the resin paste composition. By blending the component (C) with the resin paste composition, an effect of stress relaxation against thermal expansion and / or contraction can be obtained.
  • (C) Although there is no restriction
  • liquid rubber examples include polybutadiene skeletons such as polybutadiene, epoxidized polybutadiene, maleated polybutadiene, acrylonitrile butadiene rubber, acrylonitrile butadiene rubber having a carboxy group, amino terminal acrylonitrile butadiene rubber, vinyl terminal acrylonitrile butadiene rubber, and styrene butadiene rubber.
  • polybutadiene skeletons such as polybutadiene, epoxidized polybutadiene, maleated polybutadiene, acrylonitrile butadiene rubber, acrylonitrile butadiene rubber having a carboxy group, amino terminal acrylonitrile butadiene rubber, vinyl terminal acrylonitrile butadiene rubber, and styrene butadiene rubber.
  • a liquid rubber is mentioned.
  • the number average molecular weight of the liquid rubber is preferably 500 to 10,000, and more preferably 1000 to 5,000.
  • the number average molecular weight is 500 or more, the flexibility effect is further improved, and when the number average molecular weight is 10,000 or less, the increase in the viscosity of the resin paste composition by the flexible agent is sufficiently suppressed, and the workability is further improved.
  • the number average molecular weight is a value measured by gel permeation chromatography using a standard polystyrene calibration curve (hereinafter referred to as GPC method).
  • thermoplastic resin examples include acrylic resins such as polyvinyl acetate and polyalkyl acrylate, ⁇ -caprolactone-modified polyester, phenoxy resin, and polyimide.
  • the number average molecular weight of the thermoplastic resin is preferably 10,000 to 300,000, and more preferably 20,000 to 200,000. When the number average molecular weight is 10,000 or more, the flexibility effect is further improved. When the number average molecular weight is 300,000 or less, the increase in the viscosity of the resin paste composition by the flexible agent is sufficiently suppressed, and the workability is further improved.
  • the number average molecular weight is a value measured using a standard polystyrene calibration curve by the GPC method.
  • the resin paste composition preferably contains epoxidized polybutadiene as the component (C) from the viewpoint of further reducing the elastic modulus of the cured product.
  • Epoxidized polybutadiene can be easily obtained by epoxidizing commercially available polybutadiene with hydrogen peroxide solution, peracids or the like.
  • Examples of the epoxidized polybutadiene include B-1000, B-3000, G-1000, G-3000 (manufactured by Nippon Soda Co., Ltd.), B-1000, B-2000, B-3000, B-4000 ( (Nippon Petroleum Co., Ltd.), R-15HT, R-45HT, R-45M (above, Idemitsu Petroleum Co., Ltd.), Epolide PB-3600, Epolide PB-4700 (above, Daicel Chemical Industries, Ltd.) Are available as commercial products.
  • the oxirane oxygen concentration of the epoxidized polybutadiene is preferably 3 to 18%, more preferably 5 to 15%.
  • the resin paste composition preferably contains acrylonitrile butadiene rubber having a carboxy group as the component (C) from the viewpoint of further reducing the elastic modulus of the cured product and further improving the die shear strength.
  • acrylonitrile butadiene rubber having a carboxy group a compound represented by the formula (III) is preferable.
  • m represents an integer of 5 to 50
  • a and b each independently represent an integer of 1 or more.
  • the ratio of a to b (a / b) is preferably 95/5 to 50/50.
  • Examples of the compound represented by the formula (III) include Hycar CTBN-2009 ⁇ 162, CTBN-1300 ⁇ 31, CTBN-1300 ⁇ 8, CTBN-1300 ⁇ 13, CTBN-1009SP-S, CTBNX-1300 ⁇ 9 (Both manufactured by Ube Industries, Ltd.) are available as commercial products.
  • the resin paste composition preferably uses epoxidized polybutadiene and acrylonitrile butadiene rubber having a carboxyl group in combination as component (C) from the viewpoint of workability and adhesive strength.
  • the content of component (C) is preferably 10 to 200 parts by weight, more preferably 20 to 100 parts by weight, and 40 to 80 parts by weight with respect to 100 parts by weight of component (A). Is more preferable.
  • the content of the component (C) is 10 parts by mass or more, the flexibility is further improved, and when it is 200 parts by mass or less, the increase in the viscosity of the resin paste composition by the flexible agent is sufficiently suppressed, Workability is further improved.
  • the content of component (C) is preferably 3 to 12% by mass, more preferably 4 to 11% by mass, based on the total amount of the resin paste composition.
  • the content of component (C) is 3% by mass or more, the flexibility is further improved, and when the content is 12% by mass or less, the increase in the viscosity of the resin paste composition by the flexible agent is sufficiently suppressed, Workability is further improved.
  • component (D) examples include dicyandiamide, a compound represented by the following formula (IV) (also referred to as dibasic dihydrazide), a microcapsule type curing agent composed of a reaction product of an epoxy resin and an amine compound, and an imidazole compound. It is done.
  • a component can be used individually by 1 type or in combination of 2 or more types.
  • R 15 represents an arylene group or an alkylene group having 2 to 12 carbon atoms.
  • the alkylene group may be linear or branched.
  • Examples of the arylene group include p-phenylene group and m-phenylene group.
  • imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and 2-phenyl-4-methyl.
  • Examples include imidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 2-phenylimidazole isocyanuric acid adduct and the like.
  • AFH As the compound represented by the formula (IV), AFH, PFH, SFH (all of which are Nippon Hydrazine Kogyo Co., Ltd., trade name) and the like can be used.
  • PFH As the microcapsule type curing agent, Novacure (Asahi Kasei Kogyo ( Co., Ltd., trade name), etc., and as the imidazole compound, Curazole, 2P4MHZ, C17Z, 2PZ-OK (both trade names, manufactured by Shikoku Kasei Co., Ltd.) and the like can be used.
  • the resin paste composition preferably contains at least one selected from the group consisting of dicyandiamide and imidazole compound as component (D), and more preferably contains at least dicyandiamide.
  • the content of the component (D) is preferably 0.05 to 1.5% by mass, more preferably 0.1 to 1.0% by mass, based on the total amount of the resin paste composition. It can also be 1 to 0.8% by mass. When the content of component (D) is 0.05% by mass or more, curability is further improved, and when it is 1.5% by mass or less, the stability of the resin paste composition is further improved. Moreover, there exists a tendency for electrical conductivity to improve further that content of (D) component is 0.8 mass% or less.
  • the aluminum powder of the component is a component that replaces part or all of the silver powder used as a filler in the conventional resin paste.
  • excellent electrical conductivity, storage stability and die shear strength can be obtained by combining with the above components, even if a part or all of the silver powder is replaced with the component (E). Is realized.
  • the average particle diameter of the component (E) is preferably 10 ⁇ m or less, more preferably 2 to 9 ⁇ m, and further preferably 3 to 8 ⁇ m.
  • the average particle diameter can be obtained as a median diameter by a particle size distribution measuring apparatus (for example, Microtrack X100) using a laser light diffraction method.
  • the median diameter is a value of the particle diameter (D50) at which the cumulative ratio in the number-based particle size distribution is 50%.
  • the apparent density of the component is preferably 0.40 ⁇ 1.20g / cm 3, more preferably 0.55 ⁇ 0.95g / cm 3.
  • the shape of the component (E) include granules, flakes, spheres, needles, irregular shapes, and the like.
  • the content of the component (E) is preferably 10 to 50% by mass, more preferably 15 to 40% by mass, and preferably 20 to 35% by mass based on the total amount of the resin paste composition. Particularly preferred. When the content of the component (E) is within the above range, characteristics such as electrical conductivity and viscosity of the resin paste composition are more suitable as a die bonding material.
  • the resin paste composition may contain components other than those described above.
  • the resin paste composition may further contain silver powder.
  • the resin paste composition contains the component (E), which is an alternative component of silver powder, excellent electrical conductivity is obtained even when the silver powder content is low compared to conventional resin pastes. It is done.
  • the average particle diameter of the silver powder is preferably 1 to 5 ⁇ m.
  • the average particle diameter can be obtained as a median diameter by a particle size distribution measuring apparatus (for example, Microtrack X100) using a laser light diffraction method.
  • the median diameter is a value of the particle diameter (D50) at which the cumulative ratio in the number-based particle size distribution is 50%.
  • the tap density of the silver powder is preferably 3 to 6 g / cm 3 .
  • the specific surface area of the silver powder is preferably 0.5 to 1 m 2 / g.
  • the shape of the silver powder may be granular, flaky, spherical, acicular, irregular, or the like, but is preferably flaky.
  • the ratio C 1 / C 2 (mass ratio) of the content C 1 of the aluminum powder as the component (E) to the content C 2 of the silver powder is preferably 2/8 to 8/2, and preferably 3/7 to 7/3 is more preferable, and 4/6 to 6/4 is particularly preferable.
  • the ratio C 1 / C 2 is larger than 8/2, the viscosity of the resin paste increases and workability may be reduced.
  • the resin paste composition may further contain conductive fine particles other than the component (E) and silver powder.
  • conductive fine particles conductive fine particles having an average particle diameter of less than 10 ⁇ m are preferable.
  • the conductive fine particles include conductive fine particles containing gold, copper, nickel, iron, stainless steel and the like.
  • the total content of the component (E), the silver powder and the conductive fine particles is preferably 60 to 85% by mass, more preferably 65 to 80% by mass, based on the total amount of the resin paste composition, and 70 It is particularly preferably 80 to 80% by mass.
  • characteristics such as electrical conductivity and viscosity of the resin paste composition are more suitable as a die bonding material.
  • the resin paste composition may further contain a coupling agent.
  • a coupling agent There is no restriction
  • a coupling agent can be used individually by 1 type or in combination of 2 or more types.
  • Silane coupling agents include methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriacetoxysilane, vinyl-tris (2-methoxyethoxy) ) Silane, ⁇ -methacryloxypropyltrimethoxysilane, ⁇ -methacryloxypropylmethyldimethoxysilane, methyltri (methacryloxyethoxy) silane, ⁇ -acryloxypropyltrimethoxysilane, ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyl Triethoxysilane, N- ⁇ - (aminoethyl) - ⁇ -aminopropyltrimethoxysilane, N- ⁇ - (aminoethyl) - ⁇ -aminopropylmethyldime
  • Titanate coupling agents include isopropyl triisostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate, tetraisopropyl bis (dioctyl phosphite) titanate, tetraoctyl bis (ditridecyl phosphite) titanate Tetra (2,2-diallyloxymethyl-1-butyl) bis (di-tridecyl) phosphite titanate, bis (dioctylpyrophosphate) oxyacetate titanate, bis (dioctylpyrophosphate) ethylene titanate, isopropyltrioctanoyl titanate, Isopropyldimethacrylisostearoyl titanate, isopropyl (dioctyl phosphate) t
  • Examples of the aluminum coupling agent include acetoalkoxyaluminum diisopropionate.
  • zirconate coupling agent examples include tetrapropyl zirconate, tetrabutyl zirconate, tetra (triethanolamine) zirconate, tetraisopropyl zirconate, zirconium acetylacetonate acetylacetone zirconium butyrate, and zirconium stearate butyrate.
  • the content of the coupling agent is preferably 0.5 to 6.0% by mass, more preferably 1.0 to 5.0% by mass, based on the total amount of the resin paste composition.
  • adhesive strength to improve further that content of a coupling agent is 0.5 mass% or more.
  • content of the coupling agent exceeds 6.0% by mass, a large amount of volatile matter is generated when the resin paste composition is cured, and voids called voids tend to be generated in the cured product of the resin paste composition. There is.
  • the resin paste composition may further contain an epoxy resin (an epoxy resin other than an aromatic epoxy resin), a silicone resin, a urethane resin, an acrylic resin, or the like as a binder resin component.
  • an epoxy resin an epoxy resin other than an aromatic epoxy resin
  • a silicone resin a silicone resin
  • a urethane resin an acrylic resin, or the like
  • the resin paste composition may further comprise a hygroscopic agent such as calcium oxide or magnesium oxide; a wetting improver such as a fluorine-based surfactant, a nonionic surfactant or a higher fatty acid; an antifoaming agent such as silicone oil; An ion trapping agent such as an inorganic ion exchanger can be added in appropriate combination.
  • a hygroscopic agent such as calcium oxide or magnesium oxide
  • a wetting improver such as a fluorine-based surfactant, a nonionic surfactant or a higher fatty acid
  • an antifoaming agent such as silicone oil
  • An ion trapping agent such as an inorganic ion exchanger can be added in appropriate combination.
  • the resin paste composition is a batch or division of each of the above-described components, and is put into a device that is appropriately combined with a dispersion / dissolution device such as a stirrer, a hybrid mixer, a reiki machine, a three roll, a planetary mixer, It can be obtained by heating, if necessary, mixing, dissolving, pulverizing kneading or dispersing to form a uniform paste.
  • a dispersion / dissolution device such as a stirrer, a hybrid mixer, a reiki machine, a three roll, a planetary mixer, It can be obtained by heating, if necessary, mixing, dissolving, pulverizing kneading or dispersing to form a uniform paste.
  • the viscosity at 25 ° C. of the resin paste composition is preferably 30 to 200 Pa ⁇ s, more preferably 50 to 150 Pa ⁇ s, and further preferably 50 to 80 Pa ⁇ s. preferable.
  • the semiconductor device includes a support member, a semiconductor element, and an adhesive layer that is disposed between the support member and the semiconductor element and adheres the support member and the semiconductor element. It contains a cured product.
  • Such a semiconductor device is excellent in electrical conductivity and reliability because the support member and the semiconductor element are bonded to each other by the cured product of the resin paste composition.
  • support members include lead frames such as 42 alloy lead frames and copper lead frames, glass epoxy substrates (substrates made of glass fiber reinforced epoxy resin), BT substrates (BT resins made of cyanate monomer and oligomers thereof and bismaleimide). Organic substrate).
  • Examples of the method of bonding the semiconductor element on the support member using the resin paste composition include the following methods.
  • the resin paste composition is applied onto the support member by a method such as a dispensing method, a screen printing method, a stamping method, or the like to form a resin layer.
  • the semiconductor element is pressure-bonded from the surface of the resin layer opposite to the support base, and then the resin layer is heated and cured using a heating device such as an oven or a heat block. Thereby, a semiconductor element is adhere
  • the semiconductor device according to the present embodiment can be obtained by bonding a semiconductor element on a support member and then performing a wire bonding process, a sealing process, and the like as necessary.
  • the wire bonding step and the sealing step can be performed by a conventionally known method.
  • the heat curing can be performed, for example, under the conditions of a heating temperature of 150 to 220 ° C. (preferably 180 to 200 ° C.) and a heating time of 30 seconds to 2 hours (preferably 1 hour to 1.5 hours).
  • an organic substrate when used as a support member, it is preferable to dry the organic substrate before assembly because moisture adsorbed by the organic substrate may evaporate due to heating during bonding and cause voids. .
  • the present invention is, for example, as an adhesive for adhering semiconductor elements of a composition comprising a compound having a (meth) acryloyloxy group, a polymerization initiator, a flexible agent, an amine compound, and aluminum powder.
  • a composition comprising a compound having a (meth) acryloyloxy group, a polymerization initiator, a flexible agent, an amine compound, and aluminum powder.
  • the present invention also provides a method for producing an adhesive for adhering semiconductor elements, comprising a composition comprising a compound having a (meth) acryloyloxy group, a polymerization initiator, a flexible agent, an amine compound, and aluminum powder.
  • FIG. 1A is an electron micrograph of VA-2000
  • FIG. FIG. 1C shows an electron micrograph of 800F. It is a figure which shows a 500M electron micrograph.
  • a particle size distribution is measured with the particle size distribution measuring apparatus (for example, Microtrac X100) using a laser beam diffraction method, and the value of 50% of accumulation (based on the number) is used as the average particle diameter It was. The results are shown in Table 1.
  • Coupling agent KBM-403 (Product name of organosilane manufactured by Shin-Etsu Chemical Co., Ltd.)
  • Examples 1 to 8, Comparative Example 1, Reference Example 1 Each component was mixed at the blending ratio (mass ratio) shown in Table 2 or Table 3, and kneaded using a planetary mixer, and then defoamed at 666.61 Pa (5 Torr) or less for 10 minutes to obtain a resin. A paste composition was obtained.
  • the properties (viscosity and viscosity stability, die shear adhesive strength, volume resistivity) of the obtained resin paste composition were measured by the following methods. The results were as shown in Table 2 or Table 3.
  • 2A is a view showing an electron micrograph of a mixed powder of aluminum powder and silver powder in the resin paste composition obtained in Example 1, and FIG. It is a figure which shows the electron micrograph of the silver powder in the obtained resin paste composition.
  • Viscosity Viscosity (Pa ⁇ s) at 25 ° C. was measured using an EHD type rotational viscometer (manufactured by Tokyo Keiki Co., Ltd.).
  • Viscosity stability The viscosity measured at (a) is the initial value, the sampling time is 1 day, 3 days, and 7 days, and the viscosity at 25 ° C. using an EHD type rotational viscometer (manufactured by Tokyo Keiki Co., Ltd.) Pa ⁇ s) was measured.
  • the resin paste composition is abbreviated as Ni / Au plated copper frame (abbreviated as “Ni / Au plating” in Table 2) and Ag plated copper lead frame (abbreviated as “Ag spot plating” in Table 2).
  • Ni / Au plating used in Table 2
  • Ag plated copper lead frame used in Table 2.
  • a copper lead frame with Ag ring plating used in Table 2
  • about 0.5 mg of each is applied, and a 3 mm ⁇ 3 mm Si chip ( A thickness of about 0.4 mm) was pressure-bonded and further heated in an oven to 180 ° C. in 30 minutes and cured at 180 ° C. for 1 hour to obtain a test sample.
  • maintenance was measured using the automatic adhesive force test apparatus (BT4000, Dage company make). The die shear strength was measured with 10 test samples for each substrate, and the average value was evaluated.
  • the syringe was filled with the resin paste composition, and using a dispensing apparatus (SHOTminiSL, manufactured by Musashi Engineering Co., Ltd.), 20 pieces were discharged onto a glass substrate with a 21G (inner diameter: 570 ⁇ m) nozzle and coated.
  • the shape of the resin paste composition on the glass plate after coating was observed with a microscope (KH-3000, manufactured by Hilox Japan Co., Ltd.).
  • the coating shape at this time was a square protrusion, and the number of protrusions that fell and protruded from the coated part was counted and evaluated according to the following evaluation criteria.
  • FIG. 3 is a schematic diagram showing a method for producing a test sample used for measuring volume resistivity.
  • volume resistivity ((omega
  • the test sample was produced by the following method. First, as shown in FIG. 3A, three paper tapes 2 were attached on the main surface of the slide glass 1 so that the interval between the paper tapes 2 was about 2 mm. Next, as shown in FIG. 3 (b), the resin paste composition 3 was placed on the slide glass 1 exposed between the paper tapes 2, stretched with a squeegee, and applied so as to have the same thickness as the paper tape. And the paper tape 2 was removed, the resin paste composition 3 was hardened by heating at 180 degreeC for 1 hour in oven, and the test sample 10 shown in FIG.3 (c) was produced.
  • the produced test sample 10 has a structure in which a resin layer 4 having a width of 2 mm made of a cured product of the resin paste composition is provided on the main surface of the slide glass 1. The volume resistivity of the resin layer 4 was measured by the above method.
  • the resin paste compositions of the examples exhibited high die shear strength and excellent adhesion to any substrate.
  • the resin paste compositions of the examples also had good storage stability.
  • excellent electrical conductivity was obtained without using a large amount of silver having a high rare value.
  • the resin paste composition for bonding a semiconductor element of the present invention has excellent die shear strength and storage stability while using aluminum powder as a conductive filler, and is suitably used for bonding a semiconductor element and a supporting member. be able to.

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Abstract

L'invention concerne une composition de pâte de résine pour lier un élément semi-conducteur, ladite composition contenant : un composé qui a un groupe (méth)acryloyloxy ; un amorceur de polymérisation ; un agent conférant une flexibilité ; un composé amine ; et de l'aluminium en poudre.
PCT/JP2012/055577 2011-03-14 2012-03-05 Composition de pâte de résine pour lier un élément semi-conducteur, et dispositif à semi-conducteur WO2012124527A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013504665A JPWO2012124527A1 (ja) 2011-03-14 2012-03-05 半導体素子接着用樹脂ペースト組成物及び半導体装置
KR1020137024233A KR20140018901A (ko) 2011-03-14 2012-03-05 반도체 소자 접착용 수지 페이스트 조성물 및 반도체 장치
CN2012800131685A CN103429688A (zh) 2011-03-14 2012-03-05 半导体元件粘接用树脂糊剂组合物及半导体装置
SG2013068846A SG193438A1 (en) 2011-03-14 2012-03-05 Resin paste composition for bonding semiconductor element, and semiconductor device

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JP2011055456 2011-03-14
JP2011-055456 2011-03-14

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WO2012124527A1 true WO2012124527A1 (fr) 2012-09-20

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JP (1) JPWO2012124527A1 (fr)
KR (1) KR20140018901A (fr)
CN (1) CN103429688A (fr)
SG (1) SG193438A1 (fr)
TW (1) TW201245377A (fr)
WO (1) WO2012124527A1 (fr)

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Publication number Priority date Publication date Assignee Title
WO2014115343A1 (fr) * 2013-01-28 2014-07-31 日立化成株式会社 Composition de pâte de résine
WO2015093136A1 (fr) * 2013-12-16 2015-06-25 日立化成株式会社 Composition de type pâte de résine et dispositif à semi-conducteurs

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6319530B1 (ja) * 2016-08-19 2018-05-09 住友ベークライト株式会社 ダイアタッチペーストおよび半導体装置

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JPS59191785A (ja) * 1983-01-18 1984-10-30 ロツクタイト コーポレーシヨン 接着化合物及びその使用方法
JP2002012602A (ja) * 2000-06-27 2002-01-15 Hitachi Chem Co Ltd 樹脂ペースト組成物及びこれを用いた半導体装置
JP2002179769A (ja) * 2000-12-12 2002-06-26 Hitachi Chem Co Ltd 樹脂ペースト組成物及びこれを用いた半導体装置
JP2006273916A (ja) * 2005-03-28 2006-10-12 Sumitomo Bakelite Co Ltd 樹脂組成物及び樹脂組成物を使用して作製した半導体装置
JP2007169453A (ja) * 2005-12-21 2007-07-05 Sumitomo Bakelite Co Ltd 樹脂組成物及び樹脂組成物を使用して作製した半導体装置

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CN100495671C (zh) * 2004-06-18 2009-06-03 日立化成工业株式会社 晶片接合用树脂胶

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Publication number Priority date Publication date Assignee Title
JPS59191785A (ja) * 1983-01-18 1984-10-30 ロツクタイト コーポレーシヨン 接着化合物及びその使用方法
JP2002012602A (ja) * 2000-06-27 2002-01-15 Hitachi Chem Co Ltd 樹脂ペースト組成物及びこれを用いた半導体装置
JP2002179769A (ja) * 2000-12-12 2002-06-26 Hitachi Chem Co Ltd 樹脂ペースト組成物及びこれを用いた半導体装置
JP2006273916A (ja) * 2005-03-28 2006-10-12 Sumitomo Bakelite Co Ltd 樹脂組成物及び樹脂組成物を使用して作製した半導体装置
JP2007169453A (ja) * 2005-12-21 2007-07-05 Sumitomo Bakelite Co Ltd 樹脂組成物及び樹脂組成物を使用して作製した半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014115343A1 (fr) * 2013-01-28 2014-07-31 日立化成株式会社 Composition de pâte de résine
JP2014145011A (ja) * 2013-01-28 2014-08-14 Hitachi Chemical Co Ltd 樹脂ペースト組成物
WO2015093136A1 (fr) * 2013-12-16 2015-06-25 日立化成株式会社 Composition de type pâte de résine et dispositif à semi-conducteurs
JP2015135805A (ja) * 2013-12-16 2015-07-27 日立化成株式会社 樹脂ペースト組成物及び半導体装置

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SG193438A1 (en) 2013-10-30
JPWO2012124527A1 (ja) 2014-07-24
CN103429688A (zh) 2013-12-04
KR20140018901A (ko) 2014-02-13
TW201245377A (en) 2012-11-16

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