WO2012119684A3 - Aluminiumoxid basierte metallisierungsbarriere - Google Patents

Aluminiumoxid basierte metallisierungsbarriere Download PDF

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Publication number
WO2012119684A3
WO2012119684A3 PCT/EP2012/000590 EP2012000590W WO2012119684A3 WO 2012119684 A3 WO2012119684 A3 WO 2012119684A3 EP 2012000590 W EP2012000590 W EP 2012000590W WO 2012119684 A3 WO2012119684 A3 WO 2012119684A3
Authority
WO
WIPO (PCT)
Prior art keywords
aluminium oxide
barrier based
layers
metallisation
relates
Prior art date
Application number
PCT/EP2012/000590
Other languages
English (en)
French (fr)
Other versions
WO2012119684A2 (de
Inventor
Ingo Koehler
Oliver Doll
Werner Stockum
Sebastian Barth
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Priority to SG2013066592A priority Critical patent/SG193304A1/en
Priority to KR1020137026493A priority patent/KR20140022012A/ko
Priority to EP12704685.2A priority patent/EP2683777A2/de
Priority to CA2829269A priority patent/CA2829269A1/en
Priority to US14/004,074 priority patent/US20130341769A1/en
Priority to AU2012224973A priority patent/AU2012224973B2/en
Priority to JP2013556984A priority patent/JP6185845B2/ja
Priority to CN2012800119575A priority patent/CN103403885A/zh
Publication of WO2012119684A2 publication Critical patent/WO2012119684A2/de
Publication of WO2012119684A3 publication Critical patent/WO2012119684A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Die vorliegende Erfindung betrifft Aluminiumoxid basierte Passivierungsschichten, die gleichzeitig als Diffusionsbarriere für Aluminium und andere Metalle gegenüber darunter liegenden Waferschichten wirken. Weiterhin werden ein Verfahren und geeignete Zusammensetzungen zur Herstellung dieser Schichten beschrieben.
PCT/EP2012/000590 2011-03-08 2012-02-09 Aluminiumoxid basierte metallisierungsbarriere WO2012119684A2 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SG2013066592A SG193304A1 (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide
KR1020137026493A KR20140022012A (ko) 2011-03-08 2012-02-09 산화 알루미늄에 기초한 금속화물 배리어
EP12704685.2A EP2683777A2 (de) 2011-03-08 2012-02-09 Aluminiumoxid basierte metallisierungsbarriere
CA2829269A CA2829269A1 (en) 2011-03-08 2012-02-09 Aluminium oxide-based metallisation barrier
US14/004,074 US20130341769A1 (en) 2011-03-08 2012-02-09 Aluminium oxide-based metallisation barrier
AU2012224973A AU2012224973B2 (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide
JP2013556984A JP6185845B2 (ja) 2011-03-08 2012-02-09 酸化アルミニウムベースの金属配線バリア
CN2012800119575A CN103403885A (zh) 2011-03-08 2012-02-09 基于氧化铝的金属化屏障

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
EP11001921 2011-03-08
EP11001920 2011-03-08
EP11001920.5 2011-03-08
EP11001921.3 2011-03-08
EP11006971.3 2011-08-26
EP11006971 2011-08-26
EP11007205.5 2011-09-06
EP11007207 2011-09-06
EP11007205 2011-09-06
EP11007207.1 2011-09-06

Publications (2)

Publication Number Publication Date
WO2012119684A2 WO2012119684A2 (de) 2012-09-13
WO2012119684A3 true WO2012119684A3 (de) 2013-01-31

Family

ID=45688416

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/000590 WO2012119684A2 (de) 2011-03-08 2012-02-09 Aluminiumoxid basierte metallisierungsbarriere

Country Status (10)

Country Link
US (1) US20130341769A1 (de)
EP (1) EP2683777A2 (de)
JP (1) JP6185845B2 (de)
KR (1) KR20140022012A (de)
CN (1) CN103403885A (de)
AU (1) AU2012224973B2 (de)
CA (1) CA2829269A1 (de)
SG (1) SG193304A1 (de)
TW (1) TW201241924A (de)
WO (1) WO2012119684A2 (de)

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JP6285095B2 (ja) * 2012-09-28 2018-02-28 日立化成株式会社 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
JP6107033B2 (ja) * 2012-09-28 2017-04-05 日立化成株式会社 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
JP2014157871A (ja) * 2013-02-14 2014-08-28 Hitachi Chemical Co Ltd パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
KR20160113093A (ko) * 2013-09-16 2016-09-28 솔렉셀, 인크. 태양 전지의 베이스 영역 및 이미터 영역용의 레이저 가공
JP6795877B2 (ja) * 2013-12-25 2020-12-02 東京応化工業株式会社 表面被覆膜の形成方法及び表面被覆膜を有する太陽電池
WO2016150549A2 (de) * 2015-03-23 2016-09-29 Merck Patent Gmbh Druckbare tinte zur verwendung als diffusions- und legierungsbarriere zur herstellung von hocheffizienten kristallinen siliziumsolarzellen
US20180062022A1 (en) 2015-04-15 2018-03-01 Merck Patent Gmbh Sol-gel-based printable doping media which inhibit parasitic diffusion for the local doping of silicon wafers
KR20170139580A (ko) 2015-04-15 2017-12-19 메르크 파텐트 게엠베하 공확산 공정에서 인 확산을 동시 억제하는 스크린 인쇄 가능한 붕소 도핑 페이스트
CN107532331A (zh) * 2015-04-15 2018-01-02 默克专利股份有限公司 使用抑制磷扩散的可印刷的掺杂介质制备太阳能电池的方法
CN108885917B (zh) 2016-12-20 2020-06-02 浙江凯盈新材料有限公司 含硅氧烷的太阳能电池金属化浆料
SG11201809794SA (en) * 2016-12-20 2018-12-28 Zhejiang Kaiying New Materials Co Ltd Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions
CN106611799B (zh) * 2017-01-12 2018-02-02 合肥海润光伏科技有限公司 一种喷墨打印双面晶体硅太阳能电池及其制备方法
JP2017195377A (ja) * 2017-05-19 2017-10-26 日立化成株式会社 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法
US10622502B1 (en) 2019-05-23 2020-04-14 Zhejiang Kaiying New Materials Co., Ltd. Solar cell edge interconnects
US10749045B1 (en) 2019-05-23 2020-08-18 Zhejiang Kaiying New Materials Co., Ltd. Solar cell side surface interconnects
CN111834492A (zh) * 2020-07-22 2020-10-27 常州时创能源股份有限公司 TOPCon电池的制备方法

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US20130341769A1 (en) 2013-12-26
EP2683777A2 (de) 2014-01-15
KR20140022012A (ko) 2014-02-21
WO2012119684A2 (de) 2012-09-13
CN103403885A (zh) 2013-11-20
JP6185845B2 (ja) 2017-08-23
AU2012224973A1 (en) 2013-10-24
TW201241924A (en) 2012-10-16
JP2014516467A (ja) 2014-07-10
CA2829269A1 (en) 2012-09-13
AU2012224973B2 (en) 2016-01-07
SG193304A1 (en) 2013-10-30

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