WO2012119684A3 - Metallisation barrier based on aluminium oxide - Google Patents

Metallisation barrier based on aluminium oxide Download PDF

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Publication number
WO2012119684A3
WO2012119684A3 PCT/EP2012/000590 EP2012000590W WO2012119684A3 WO 2012119684 A3 WO2012119684 A3 WO 2012119684A3 EP 2012000590 W EP2012000590 W EP 2012000590W WO 2012119684 A3 WO2012119684 A3 WO 2012119684A3
Authority
WO
WIPO (PCT)
Prior art keywords
aluminium oxide
barrier based
layers
metallisation
relates
Prior art date
Application number
PCT/EP2012/000590
Other languages
German (de)
French (fr)
Other versions
WO2012119684A2 (en
Inventor
Ingo Koehler
Oliver Doll
Werner Stockum
Sebastian Barth
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Priority to KR1020137026493A priority Critical patent/KR20140022012A/en
Priority to SG2013066592A priority patent/SG193304A1/en
Priority to AU2012224973A priority patent/AU2012224973B2/en
Priority to EP12704685.2A priority patent/EP2683777A2/en
Priority to CA2829269A priority patent/CA2829269A1/en
Priority to US14/004,074 priority patent/US20130341769A1/en
Priority to CN2012800119575A priority patent/CN103403885A/en
Priority to JP2013556984A priority patent/JP6185845B2/en
Publication of WO2012119684A2 publication Critical patent/WO2012119684A2/en
Publication of WO2012119684A3 publication Critical patent/WO2012119684A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention relates to passivation layers based on aluminium oxide, said layers acting simultaneously as diffusion barriers for aluminium and other metals in relation to wafer layers lying below. The invention also relates to a method and suitable compositions for producing said layers.
PCT/EP2012/000590 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide WO2012119684A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020137026493A KR20140022012A (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide
SG2013066592A SG193304A1 (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide
AU2012224973A AU2012224973B2 (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide
EP12704685.2A EP2683777A2 (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide
CA2829269A CA2829269A1 (en) 2011-03-08 2012-02-09 Aluminium oxide-based metallisation barrier
US14/004,074 US20130341769A1 (en) 2011-03-08 2012-02-09 Aluminium oxide-based metallisation barrier
CN2012800119575A CN103403885A (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide
JP2013556984A JP6185845B2 (en) 2011-03-08 2012-02-09 Aluminum oxide-based metal wiring barrier

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
EP11001920.5 2011-03-08
EP11001920 2011-03-08
EP11001921 2011-03-08
EP11001921.3 2011-03-08
EP11006971.3 2011-08-26
EP11006971 2011-08-26
EP11007207.1 2011-09-06
EP11007205 2011-09-06
EP11007207 2011-09-06
EP11007205.5 2011-09-06

Publications (2)

Publication Number Publication Date
WO2012119684A2 WO2012119684A2 (en) 2012-09-13
WO2012119684A3 true WO2012119684A3 (en) 2013-01-31

Family

ID=45688416

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/000590 WO2012119684A2 (en) 2011-03-08 2012-02-09 Metallisation barrier based on aluminium oxide

Country Status (10)

Country Link
US (1) US20130341769A1 (en)
EP (1) EP2683777A2 (en)
JP (1) JP6185845B2 (en)
KR (1) KR20140022012A (en)
CN (1) CN103403885A (en)
AU (1) AU2012224973B2 (en)
CA (1) CA2829269A1 (en)
SG (1) SG193304A1 (en)
TW (1) TW201241924A (en)
WO (1) WO2012119684A2 (en)

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DE102011077526A1 (en) * 2011-06-15 2012-12-20 Robert Bosch Gmbh Method for producing a semiconductor device
TWI624958B (en) * 2012-01-06 2018-05-21 日商日立化成股份有限公司 Semiconductor substrate having passivation film and method for producing the same, and photovoltaic cell element and method for producing the same
JP6285095B2 (en) * 2012-09-28 2018-02-28 日立化成株式会社 Composition for forming semiconductor substrate passivation film, semiconductor substrate with passivation film and method for producing the same, solar cell element and method for producing the same
JP6107033B2 (en) * 2012-09-28 2017-04-05 日立化成株式会社 Composition for forming semiconductor substrate passivation film, semiconductor substrate with passivation film and method for producing the same, solar cell element and method for producing the same
JP2014157871A (en) * 2013-02-14 2014-08-28 Hitachi Chemical Co Ltd Composition for forming passivation film, semiconductor substrate with passivation film and manufacturing method therefor, and solar cell element and manufacturing method therefor
KR20160113093A (en) * 2013-09-16 2016-09-28 솔렉셀, 인크. Laser processing for solar cell base and emitter regions
JP6795877B2 (en) * 2013-12-25 2020-12-02 東京応化工業株式会社 Method of forming a surface coating film and a solar cell having a surface coating film
WO2016150549A2 (en) * 2015-03-23 2016-09-29 Merck Patent Gmbh Printable ink for use as diffusion and alloy barrier for the production of high-efficient crystalline silicone solar cells
CN107532300A (en) 2015-04-15 2018-01-02 默克专利股份有限公司 The suppression parasitism locally adulterated for silicon wafer spreads and the printable doped dielectric based on collosol and gel
US20180122640A1 (en) 2015-04-15 2018-05-03 Merck Patent Gmbh Screen-printable boron doping paste with simultaneous inhibition of phosphorus diffusion in co-diffusion processes
CN107532331A (en) * 2015-04-15 2018-01-02 默克专利股份有限公司 The method for preparing solar cell using the printable doped dielectric for suppressing phosphorus diffusion
MY190562A (en) * 2016-12-20 2022-04-27 Zhejiang Kaiying New Mat Co Ltd Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions
MY189222A (en) 2016-12-20 2022-01-31 Zhejiang Kaiying New Mat Co Ltd Siloxane-containing solar cell metallization pastes
CN106611799B (en) * 2017-01-12 2018-02-02 合肥海润光伏科技有限公司 A kind of two-sided crystal silicon solar energy battery of inkjet printing and preparation method thereof
JP2017195377A (en) * 2017-05-19 2017-10-26 日立化成株式会社 Composition for formation of semiconductor substrate passivation film, semiconductor substrate with passivation film, method for manufacturing the same, solar battery device and method for manufacturing the same
US10622502B1 (en) 2019-05-23 2020-04-14 Zhejiang Kaiying New Materials Co., Ltd. Solar cell edge interconnects
US10749045B1 (en) 2019-05-23 2020-08-18 Zhejiang Kaiying New Materials Co., Ltd. Solar cell side surface interconnects
CN111834492A (en) * 2020-07-22 2020-10-27 常州时创能源股份有限公司 Preparation method of TOPCon battery

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GB2425976A (en) * 2005-05-11 2006-11-15 Univ Sheffield Hallam Sol-gel derived coating
US20080090101A1 (en) * 2006-10-17 2008-04-17 Andreas Klipp Method of preparing a coating solution and a corresponding use of the coating solution for coating a substrate

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US4997482A (en) * 1987-01-02 1991-03-05 Dow Corning Corporation Coating composition containing hydrolyzed silicate esters and other metal oxide precursors
US5104636A (en) * 1988-03-11 1992-04-14 Kaiser Aerospace And Electronics Corporation Method of making aluminum oxide precursors
US5100764A (en) * 1989-12-26 1992-03-31 Iowa State University Research Foundation, Inc. Method of making patterned metal oxide films comprising a sol-gel of metal oxide and a photoactive compound
EP0887200A1 (en) * 1997-06-24 1998-12-30 Oji-Yuka Synthetic Paper Co., Ltd. Coating composition for recording material and process for producing recording material
FR2865219A1 (en) * 2004-01-20 2005-07-22 Peugeot Citroen Automobiles Sa Coating substrate with metal oxide, e.g. for catalysis, comprises use of colloidal solution applied to substrate in thixotropic form
GB2425976A (en) * 2005-05-11 2006-11-15 Univ Sheffield Hallam Sol-gel derived coating
US20080090101A1 (en) * 2006-10-17 2008-04-17 Andreas Klipp Method of preparing a coating solution and a corresponding use of the coating solution for coating a substrate

Also Published As

Publication number Publication date
CN103403885A (en) 2013-11-20
KR20140022012A (en) 2014-02-21
TW201241924A (en) 2012-10-16
EP2683777A2 (en) 2014-01-15
SG193304A1 (en) 2013-10-30
AU2012224973B2 (en) 2016-01-07
US20130341769A1 (en) 2013-12-26
JP2014516467A (en) 2014-07-10
JP6185845B2 (en) 2017-08-23
AU2012224973A1 (en) 2013-10-24
CA2829269A1 (en) 2012-09-13
WO2012119684A2 (en) 2012-09-13

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