WO2012114536A1 - マイクロフォン - Google Patents
マイクロフォン Download PDFInfo
- Publication number
- WO2012114536A1 WO2012114536A1 PCT/JP2011/056253 JP2011056253W WO2012114536A1 WO 2012114536 A1 WO2012114536 A1 WO 2012114536A1 JP 2011056253 W JP2011056253 W JP 2011056253W WO 2012114536 A1 WO2012114536 A1 WO 2012114536A1
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- WO
- WIPO (PCT)
- Prior art keywords
- acoustic sensor
- microphone
- circuit board
- interposer
- signal processing
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/06—Arranging circuit leads; Relieving strain on circuit leads
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
Definitions
- the present invention relates to a microphone, and specifically to a microphone in which an acoustic sensor is mounted in a package.
- FIG. 1 is a cross-sectional view showing a conventional microphone having a general structure.
- the microphone 11 is obtained by mounting an acoustic sensor 15 and a signal processing circuit 17 in a package including a cover 12 and a circuit board 13.
- the acoustic sensor 15 and the signal processing circuit 17 are mounted side by side on the upper surface of the circuit board 13, and the signal processing circuit 17 is covered with a sealing resin 21.
- the acoustic sensor 15 and the signal processing circuit 17 are electrically connected by a bonding wire 18, and the signal processing circuit 17 is further connected to the in-board wiring 14 of the circuit board 13 by a bonding wire 19.
- the lower surface of the circuit board 13 is mounted on the printed wiring board and is in close contact with the printed wiring board. Therefore, a sound introduction hole 20 for introducing acoustic vibration into the package is opened on the upper surface of the cover 12.
- the lower surface of the acoustic sensor 15 is bonded to the circuit board 13, and the lower surface of the back chamber 16 is closed with the circuit board 13.
- the microphone 11 having such a structure has the following problems.
- a projected area on the horizontal plane hereinafter referred to as a flat area
- the acoustic sensor 15 and the signal processing circuit 17 are connected by a bonding wire 18.
- the bonding wire 18 When the bonding wire 18 is stretched and wired, the bonding wire 18 may be disconnected due to vibration or the like. Therefore, the bonding wire 18 is loosened and wired as shown in FIG.
- the bonding wire 18 when the bonding wire 18 is slackened and wired, the bonding wire 18 may come into contact with the electrode pads and wiring of the acoustic sensor 15 and the signal processing circuit 17 and cause a short-circuit accident. Is loosened upward. As a result, the height of the package needs to be high enough to accommodate the bonding wire 18 jumping upward, and the height of the microphone 11 is increased accordingly.
- FIG. 1 A microphone disclosed in Patent Document 1 is shown in FIG.
- the signal processing circuit 17 is mounted on the upper surface of the circuit board 13.
- a spacer 32 is fixed on the upper surface of the circuit board 13, and the acoustic sensor 15 is mounted on the upper surface of the spacer 32.
- the spacer 32 has a through hole 33 penetrating in the vertical direction, and a communication hole 34 for reducing a static pressure difference between the outside of the spacer 32 and the inside of the through hole 33 is formed.
- an electrode pad is provided on the lower surface of the acoustic sensor 15, and the acoustic sensor 15 is electrically connected to the circuit board 13 via the spacer 32, so that a bonding wire is used as in the microphone 11 of FIG. 1.
- the height of the microphone 31 does not increase due to the 18 slack.
- this microphone 31 also has the same problem as the microphone 11 of FIG. Even in the microphone 31, since the acoustic sensor 15 and the signal processing circuit 17 are arranged side by side, the plane area of the microphone 31 cannot be reduced. In particular, the plane area of the microphone 31 cannot be made smaller than the sum of the plane area of the acoustic sensor 15 and the plane area of the signal processing circuit 17.
- the through hole 33 of the spacer 32 is made continuous with the back chamber 16 of the acoustic sensor 15 to widen the space under the diaphragm, so that the volume of the back chamber 16 is substantially reduced without increasing the acoustic sensor 15. Can be expanded. As a result, an improvement in sensitivity of the microphone 31 can be expected.
- the spacer 32 has a communication hole 34 in the horizontal direction.
- the communication hole 34 allows the static pressure to be transmitted between the back chamber 16 and the outer space (the package internal space) of the acoustic sensor 15 and the spacer 32, while the gas based on the pressure fluctuation acting on the diaphragm. Is to prevent the passage of. That is, the communication hole 34 is for removing the static pressure difference inside and outside the acoustic sensor 15 based on the occurrence of outgas and the difference in elevation.
- Patent Document 2 (Microphone of Patent Document 2)
- a three-dimensional circuit board is provided on a printed circuit board constituting a package, an acoustic sensor is mounted on the three-dimensional circuit board, and a signal processing circuit is provided in an opening formed in a central portion of the three-dimensional circuit board.
- a microphone containing the above is disclosed.
- the microphone since the acoustic sensor is disposed above the signal processing circuit, the microphone can be reduced in size by reducing the plane area of the microphone.
- the volume of the back chamber of the acoustic sensor is increased by providing the acoustic sensor on the three-dimensional circuit board as in Patent Document 1.
- the signal processing circuit is housed in the opening of the three-dimensional circuit board, the volume of the back chamber is reduced again, and it is difficult to improve the sensitivity of the microphone.
- the present invention has been made in view of the technical problems as described above.
- the object of the present invention is to reduce the plane area viewed from above, and to reduce the volume of the back chamber of the acoustic sensor.
- An object of the present invention is to provide a microphone that can increase the size of the microphone.
- a microphone according to the present invention is housed in a circuit board, a support member mounted on an upper surface of the circuit board, an acoustic sensor mounted on the support member, and a cavity formed inside the support member.
- a microphone including: a signal processing circuit mounted on an upper surface of the circuit board; and a cover that covers the acoustic sensor, the support member, and the signal processing circuit and is fixed to the upper surface of the circuit board.
- the sensor includes a space serving as a front chamber on the upper surface side and a space serving as a back chamber on the lower surface side, and the support member includes the acoustic wave in the space surrounded by the cover and the circuit board. Acoustic vibration can be transmitted between a space located outside the sensor and the support member and a space serving as the back chamber in the acoustic sensor. It is characterized in that it is formed an acoustic transmission path.
- the acoustic sensor is arranged above the signal processing circuit, the plane area of the area for mounting the acoustic sensor and the signal processing circuit can be reduced, and the microphone can be downsized. can do. Further, by providing the support member with the acoustic transmission path, a space located outside the acoustic sensor and the support member in a space surrounded by the cover and the circuit board can be used as a back chamber of the acoustic sensor. As a result, the volume of the back chamber of the acoustic sensor can be substantially increased, and the sensitivity of the microphone can be improved.
- a sound introduction hole for introducing acoustic vibration is opened in the cover, and the acoustic sensor surrounds the space serving as the front chamber and the sound on the inner surface of the cover. It is characterized by being in close contact with the region surrounding the introduction hole. According to this embodiment, the acoustic vibration introduced into the microphone from the sound introduction hole is less likely to leak out of the front chamber. Therefore, the acoustic vibration that has entered from the sound introduction hole is unlikely to enter the back chamber side, and the sensitivity of the microphone is unlikely to decrease due to the acoustic vibration that has entered the back chamber side.
- the support member includes a wiring structure for electrically connecting the acoustic sensor and the circuit board.
- the acoustic sensor and the circuit board can be connected without using a bonding wire, the height of the package including the cover and the circuit board can be made lower than when the bonding wire is used, and the microphone can be connected. It can be reduced in profile or size.
- the acoustic transmission path is formed by recessing an upper surface portion of the support member into a concave shape or a groove shape. According to this embodiment, the processing of the acoustic transmission path is facilitated.
- the cavity for housing the signal processing circuit penetrates the support member vertically. According to such an embodiment, since the cavity for housing the signal processing circuit becomes a part of the back chamber of the acoustic sensor, the back chamber volume of the acoustic sensor can be further increased, and the sensitivity of the microphone can be improved. .
- the cavity for housing the signal processing circuit is recessed in the lower surface of the support member, and the cavity and the acoustic transmission path are formed by the support member. It is partitioned. According to this embodiment, a short circuit accident does not occur between the acoustic sensor and the signal processing circuit. In addition, the signal processing circuit can be protected from moisture and dust.
- the means for solving the above-described problems in the present invention has a feature in which the above-described constituent elements are appropriately combined, and the present invention enables many variations by combining such constituent elements. .
- FIG. 1 is a cross-sectional view showing a microphone having a general structure.
- FIG. 2 is a cross-sectional view of the microphone disclosed in Patent Document 1.
- FIG. 3 is a cross-sectional view showing the structure of the microphone according to Embodiment 1 of the present invention.
- FIG. 4A is a perspective view of an interposer used in the microphone of the first embodiment.
- FIG. 4B is a perspective view of the interposer drawn upside down.
- FIG. 5A is a cross-sectional view taken along line XX of FIG.
- FIG. 5B is a cross-sectional view taken along line YY of FIG.
- FIG. 6A is a plan view showing a state in which a plurality of interposers are manufactured at a time, which is a part of the microphone manufacturing process.
- FIG. 6B is a cross-sectional view taken along the line ZZ in FIG.
- FIG. 7A is a cross-sectional view illustrating a state in which a plurality of acoustic sensors are manufactured at a time, which is a part of the microphone manufacturing process.
- FIG. 7B is a cross-sectional view showing a state in which the acoustic sensor of FIG. 7A is joined and integrated on the interposer of FIG.
- FIG. 8A is a cross-sectional view illustrating a process of polishing and thinning the Si wafer of the acoustic sensor.
- FIG. 8A is a cross-sectional view illustrating a process of polishing and thinning the Si wafer of the acoustic sensor.
- FIG. 8B is a cross-sectional view showing a state where the front chamber is opened in the Si wafer of the acoustic sensor and the sacrificial layer is removed by etching.
- FIG. 9A is a cross-sectional view showing one acoustic sensor and an interposer divided by dicing.
- FIG. 9B is a cross-sectional view illustrating a process of mounting the signal processing circuit on the upper surface of the circuit board.
- FIG. 10A is a cross-sectional view illustrating a state where the acoustic sensor and the interposer are mounted on the circuit board so as to cover the signal processing circuit.
- FIG. 10B is a cross-sectional view showing a state where a cover is attached to the upper surface of the circuit board.
- FIG. 11 is a cross-sectional view showing the structure of a microphone according to Embodiment 2 of the present invention.
- FIGS. 12A and 12B are a perspective view and a cross-sectional view of an interposer used in the microphone of the second embodiment.
- FIG. 13A is a perspective view showing an interposer of a different form.
- FIG. 13B is a cross-sectional view thereof.
- FIG. 14A is a perspective view showing a further different form of interposer.
- FIG. 14B is a cross-sectional view thereof.
- FIG. 15A is a perspective view showing a further different form of interposer.
- FIG. 15B is a cross-sectional view thereof.
- FIG. 3 is a cross-sectional view illustrating the structure of the microphone 41 according to the first embodiment.
- 4A is a perspective view of an interposer 52 (supporting member) used in the microphone 41
- FIG. 4B is a perspective view showing the interposer 52 in a vertically inverted state.
- 5A and 5B are cross-sectional views of the interposer 52.
- FIG. 5A shows a cross-sectional view taken along line XX of FIG. 4A, and FIG. A cross section along line YY of A) is shown.
- a package is formed by the cover 42 and the circuit board 43.
- an acoustic sensor 51, an interposer 52, and a signal processing circuit 53 are housed.
- a plurality of upper surface electrode pads 44 for bonding the interposer 52 and the signal processing circuit 53 are provided on the upper surface of the circuit board 43 constituting a part of the package.
- the lower surface of the circuit board 43 is provided with a plurality of lower surface electrode pads 45 for connecting the microphone 41 to the printed wiring board or the like when the microphone 41 is mounted on the printed wiring board or the like.
- the cover 42 has a box shape with an open bottom surface, and an electromagnetic shield film 47 made of a metal plating film is formed on the inner surface of a cover body 46 made of an insulating material (for example, plastic).
- the cover 42 has at least one sound introduction hole 48 for introducing acoustic vibration into the package.
- the cover main body 46 may be made of metal.
- the cover main body 46 has a function of electromagnetic shielding, so that it is not necessary to provide the electromagnetic shielding film 47 separately.
- the acoustic sensor 51 is a capacitive element manufactured using MEMS technology. As shown in FIG. 3, the entire acoustic sensor 51 is held by a silicon substrate 54. A front chamber 55 is opened in the silicon substrate 54 so as to penetrate vertically. A thin film diaphragm 56 is provided on the lower surface of the silicon substrate 54 so as to cover the lower surface opening of the front chamber 55.
- the diaphragm 56 is made of conductive polysilicon. Therefore, the diaphragm 56 itself is a movable electrode plate.
- the diaphragm 56 is stretched in a film shape on the lower surface of the silicon substrate 54 by supporting a plurality of locations on the outer peripheral edge with anchors (not shown), and between the outer periphery of the diaphragm 56 and the silicon substrate 54 between the anchors.
- a vent hole is formed between the lower surface and the lower surface.
- a back plate 57 is provided below the diaphragm 56 so as to form an air gap 58 (gap) between the diaphragm 56 and the outer periphery of the back plate 57 is fixed to the lower surface of the silicon substrate 54. ing.
- a fixed electrode plate 59 is provided on the upper surface of the back plate 57 so as to face the diaphragm 56.
- the back plate 57 is made of insulating SiN, and the fixed electrode plate 59 is made of conductive polysilicon.
- acoustic holes 60 acoustic holes
- a lead wire 61 extends from the end of the diaphragm 56.
- An electrode portion 62 embedded in the back plate 57 is electrically connected to the end portion of the lead wiring 61.
- a lead wiring 63 extends from the end of the fixed electrode plate 59.
- An electrode portion 64 embedded in the back plate 57 is electrically connected to the end portion of the lead wiring 63.
- the lower surface of the electrode portion 62 is exposed at any one of the four corners of the lower surface of the acoustic sensor 51, and a bump 67 is provided on the lower surface of the electrode portion 62.
- the lower surface of the electrode part 64 is exposed at another corner among the four corners of the lower surface of the acoustic sensor 51, and a bump 67 is provided on the lower surface of the electrode part 64.
- dummy electrodes are provided at the corners where the electrode portions 62 and 64 are not provided.
- the dummy electrode is an electrode for mechanically fixing the lower surface of the acoustic sensor 51 with solder or the like, and has no electrical function.
- the dummy electrode is also provided with bumps.
- the interposer 52 has a structure as shown in FIGS. 4A, 4B, 5A, and 5B.
- the interposer 52 is formed in a rectangular tube shape by an insulating material, and a cavity 70 penetrating in the vertical direction in which the signal processing circuit 53 can be accommodated is formed in the interposer 52.
- a ventilation notch 71 (acoustic transmission path) is formed in the upper wall surface of the interposer 52.
- the interposer 52 has a structure for electrically connecting the acoustic sensor 51 and the circuit board 43. That is, a through electrode 65 is embedded in one of the four corners of the interposer 52, a pad portion 65 a electrically connected to the through electrode 65 is provided on the upper surface of the interposer 52, and a pad electrically connected to the through electrode 65 is provided on the lower surface. A portion 65b is provided. Similarly, a penetrating electrode 66 is embedded in another part of the four corners of the interposer 52, a pad portion 66 a electrically connected to the penetrating electrode 66 is provided on the upper surface of the interposer 52, and the penetrating electrode 66 is provided on the lower surface. A conductive pad portion 66b is provided.
- the dummy electrode 72a is provided on the upper surface of the interposer 52, and the dummy electrode 72b is provided on the lower surface.
- the dummy electrodes 72a and 72b are electrodes for mechanically connecting and fixing the interposer 52, and the upper dummy electrode 72a and the lower dummy electrode 72b are not electrically connected.
- the ventilation notch 71 is formed in the upper part of the wall surface.
- the ventilation notch 71 may be provided in the lower part of the wall surface of the interposer 52.
- a ventilation opening (acoustic transmission path) may be opened in a window shape on the wall surface of the interposer 52.
- an acoustic transmission passage such as a ventilation notch or a ventilation opening needs to have a passage cross-sectional area that can transmit a dynamic pressure change due to acoustic vibration.
- the signal processing circuit 53 is a circuit for amplifying the acoustic detection signal output from the acoustic sensor 51, further converting the signal into a digital signal, and outputting the digital signal.
- an electrode unit 69 for inputting a signal from the acoustic sensor 51 and an electrode unit 69 for outputting a signal-processed signal are provided.
- the microphone 41 is assembled as follows.
- the acoustic sensor 51 is placed on the interposer 52, the bump 67 provided on the lower surface of the electrode portion 62 is bonded to the upper surface (pad portion 65 a) of the through electrode 65, and the bump 67 provided on the lower surface of the electrode portion 64 is formed.
- the through electrode 66 is bonded to the upper surface (pad portion 66a).
- the bump 67 of the dummy electrode provided on the lower surface of the acoustic sensor 51 is bonded to the dummy electrode 72 a on the upper surface of the interposer 52.
- the acoustic sensor 51 is mechanically fixed to the upper surface of the interposer 52 by the four bumps 67.
- the electrode parts 62 and 64 of the acoustic sensor 51 are electrically connected to the lower surface (pad parts 65b and 66b) of the interposer 52 through the through electrodes 65 and 66, respectively.
- the pad portions 65b and 66b and the dummy electrode 72b provided on the lower surface of the interposer 52 are joined to the upper electrode pad 44 of the circuit board 43 by a conductive material 68 such as solder or conductive adhesive.
- the electrode portion 69 of the signal processing circuit 53 is also bonded to the upper electrode pad 44 of the circuit board 43 by a conductive material 68 such as solder or a conductive adhesive.
- the cover 42 is overlaid on the upper surface of the circuit board 43 so as to cover the acoustic sensor 51, the interposer 52 and the signal processing circuit 53 mounted on the upper surface of the circuit board 43.
- the sound introduction hole 48 of the cover 42 is disposed so as to face the front chamber 55 of the acoustic sensor 51.
- the entire upper surface of the acoustic sensor 51 (the upper surface of the silicon substrate 54) is sealed by adhering the entire circumference to the inner surface of the cover 42 using an adhesive resin 50.
- the lower surface of the cover 42 is bonded to the upper surface of the circuit board 43 with a conductive adhesive, and the electromagnetic shield film 47 is electrically connected to the ground electrode of the circuit board 43.
- the acoustic vibration enters the microphone 41 from the sound introduction hole 48, the acoustic vibration is guided into the front chamber 55 of the acoustic sensor 51. Since the acoustic vibration causes the diaphragm 56 to vibrate, the capacitance of the capacitor formed by the diaphragm 56 and the fixed electrode plate 59 is changed, and this change in capacitance is output from the electrode portions 62 and 64 as an acoustic detection signal. The The acoustic detection signal output from the acoustic sensor 51 is transmitted to the upper electrode pad 44 through the through electrodes 65 and 66.
- the upper surface electrode pad 44 to which the pad portions 65b and 66b of the through electrodes 65 and 66 are joined is an electrode for signal input of the signal processing circuit 53 by a wiring pattern (not shown) provided on the upper surface or inside of the circuit board 43.
- the portion 69 is electrically connected to the joined upper electrode pad 44. Therefore, the acoustic detection signal of the acoustic sensor 51 is input into the signal processing circuit 53 from the electrode portion 69 for signal input.
- the upper electrode pad 44 to which the signal output electrode portion 69 is bonded is connected to the lower electrode pad 45 of the circuit board 43 by a wiring structure (not shown) provided inside the circuit board 43. Therefore, the output signal processed by the signal processing circuit 53 is output from the lower surface electrode pad 45 of the circuit board 43 to the outside.
- the electrical connection form between the acoustic sensor 51 and the signal processing circuit 53, the number of through electrodes in the interposer 52, and the like vary depending on the configuration of the acoustic sensor 51 and the signal processing circuit 53, and thus the above description represents an example. .
- the acoustic sensor 51 having such a configuration, the following operational effects can be obtained.
- the acoustic sensor 51 and the signal processing circuit 53 are connected through through electrodes 65 and 66 provided in the interposer 52. Therefore, it is not necessary to consider the slackness of the bonding wire as in the case of connecting using the bonding wire, and the height of the acoustic sensor 51 is not increased unnecessarily.
- the acoustic sensor 51 and the signal processing circuit 53 are arranged above and below, an area for mounting the signal processing circuit 53 is not required separately from the area for mounting the acoustic sensor 51, as in the conventional case.
- the plane area of the microphone 41 can be significantly reduced. Therefore, even when the size of the acoustic sensor 51 and the signal processing circuit 53 cannot be reduced, the microphone 41 can be reduced in size.
- a space surrounded by the silicon substrate 54 between the sound introduction hole 48 and the diaphragm 56 is a front chamber 55.
- the space on the lower surface side of the diaphragm 56 becomes the back chamber of the acoustic sensor 51.
- the acoustic vibration after passing through the diaphragm 56 can pass through the acoustic hole 60 and spread into the cavity 70 in the interposer 52, and further pass through the ventilation notch 71 and spread into the package internal space 49.
- the package internal space 49 refers to a space outside the acoustic sensor 51 and the interposer 52 in the space surrounded by the cover 42 and the circuit board 43.
- a space obtained by combining the space below the diaphragm 56 in the acoustic sensor 51, the cavity 70 in the interposer 52, and the package internal space 49 is a substantial back chamber. That is, in the microphone 41, almost all the spaces in the package except the front chamber 55 become the back chamber.
- the sensitivity of the acoustic sensor 51 increases as the back chamber volume increases.
- most of the space in the package can be used as a back chamber, so that the sensitivity of the acoustic sensor 51 can be improved.
- a horizontal communication hole 34 is formed in the spacer 32.
- this is to alleviate the static pressure difference inside and outside the back chamber caused by thermal expansion, atmospheric pressure change, etc., and does not transmit acoustic vibration.
- the volume of the back chamber of the acoustic sensor 15 is increased by increasing the passage cross-sectional area of the communication hole 34 to transmit acoustic vibration.
- the passage sectional area of the communication hole 34 in the microphone 31 is increased, the front chamber and the back chamber of the acoustic sensor 15 communicate with each other, and the sensitivity of the acoustic sensor 15 cannot be obtained.
- a vent hole is formed between the three-dimensional circuit board and the printed circuit board. This vent hole is also provided for the same purpose as the communication hole in Patent Document 1.
- the electromagnetic shield film 47 is formed on the inner surface of the cover 42 (the electromagnetic shield film may also be provided inside the circuit board 43).
- the signal processing circuit 53 can be blocked from external noise, and the S / N ratio of the microphone 41 can be improved.
- FIG. 6A is a plan view showing a plurality of interposers 52 manufactured integrally.
- FIG. 6B shows a cross section taken along line ZZ in FIG.
- the plurality of interposers 52 are produced as follows. Pad portions 65b and 66b and dummy electrodes 72b are formed at predetermined positions by performing metal plating or vapor deposition on the lower surface of the insulating Si wafer 73, respectively. Next, through holes are formed in the Si wafer 73 at the positions of the pad portions 65b and 66b.
- Through electrodes 65 and 66 are produced by depositing a metal material in the through holes by plating or the like. Further, pad portions 65a and 66a are formed on the upper surface of the Si wafer 73 at the positions of the through electrodes 65 and 66 by metal plating or vapor deposition. At the same time, a dummy electrode 72 a is formed at a predetermined position on the upper surface of the Si wafer 73. Thereafter, the central portion of the region surrounded by the pair of pad portions 65a and 66a and the dummy electrode 72a is etched, thereby opening the cavity 70 penetrating vertically. Further, the upper surface of the Si wafer 73 is etched into a groove shape to form a ventilation notch 71.
- FIG. 6A and FIG. 6B show the plurality of interposers 52 thus manufactured integrally.
- FIG. 7A is a cross-sectional view showing a plurality of acoustic sensors 51 manufactured integrally.
- a polysilicon diaphragm 56 is provided for each region to be the acoustic sensor 51.
- a sacrificial layer 75 is formed on the diaphragm 56, and a fixed electrode plate 59 and a back plate 57 are provided on the upper surface of the sacrificial layer 75.
- electrode portions 62 and 64 and dummy electrodes are provided at each corner of a region to be each acoustic sensor 51.
- the acoustic sensor 51 manufactured as shown in FIG. 7A is turned upside down and overlaid on the upper surface of the interposer 52 in FIG. 65a, the electrode part 64 and the pad part 66a, and the dummy electrode and the dummy electrode 72a are joined.
- the Si wafer 74 having a plurality of acoustic sensors 51 and the Si wafer 73 having a plurality of interposers 52 are bonded together.
- the upper surface of the acoustic sensor 51 is polished to reduce the thickness of the Si wafer 74. If the acoustic sensor 51 alone is formed on a single Si wafer 74, when the Si wafer 74 is polished to reduce the thickness, the Si wafer 74 is cracked or chipped in the polishing process or subsequent processes, and the acoustic sensor 51 yield decreases. However, in the manufacturing method described here, since the Si wafer 74 is polished in a state where the two Si wafers, that is, the Si wafer 73 and the Si wafer 74 are bonded together, the Si wafer 74 is polished with increased rigidity. As a result, the Si wafer 74 can be polished easily and with a high yield.
- the sacrificial layer 75 of the acoustic sensor 51 is removed by etching, and an air gap 58 is formed between the diaphragm 56 and the fixed electrode plate 59.
- the diaphragm 56 is formed into a vibrating film.
- the Si wafers 74 and 73 are diced along a cutting line indicated by a one-dot chain line in FIG.
- FIG. 9A the acoustic sensor 51 and the interposer 52 are separated one by one while being joined up and down.
- the signal processing circuit 53 is flip-chip mounted on the upper surface of the circuit board 43, and the electrode portion 69 of the signal processing circuit 53 is bonded to the upper electrode pad 44 of the circuit board 43 by the conductive material 68.
- the signal processing circuit 53 thus mounted on the circuit board 43 is shown in FIG.
- the interposer 52 and the acoustic sensor 51 are overlaid on the circuit board 43 so as to cover the signal processing circuit 53, and the signal processing circuit 53 is placed in the cavity 70 of the interposer 52.
- the pad portions 65 b and 66 b of the interposer 52 and the dummy electrode 72 b are bonded to the upper surface electrode pad 44 of the circuit board 43 by the conductive material 68.
- the cover 42 is overlaid on the circuit board 43 so as to cover the acoustic sensor 51, the interposer 52 and the signal processing circuit 53.
- a sound introduction hole 48 is previously opened in the cover 42, and the sound introduction hole 48 is accommodated in the upper surface opening of the front chamber 55 when the cover 42 is overlapped on the circuit board 43.
- the lower surface of the cover 42 is bonded to the circuit board 43 with a conductive adhesive.
- the upper surface of the acoustic sensor 51 is adhered to the inner surface of the cover 42 with the adhesive resin 50, the space between the entire upper surface of the acoustic sensor 51 and the inner surface of the cover 42 is sealed, The vibration is prevented from leaking from the gap between the acoustic sensor 51 and the cover 42.
- the Si wafer 74 is less likely to be cracked or chipped when the Si wafer 74 is polished, so that the yield in the manufacturing process of the microphone 41 is improved. Further, since the Si wafer 74 is hardly cracked or chipped, the thickness of the Si wafer 74 can be reduced by polishing, and the height of the acoustic sensor 51 can be reduced. If the height of the acoustic sensor 51 can be reduced, the cover 42 having a low height can be used, and the microphone 41 can be reduced in height and size.
- FIG. 11 is a cross-sectional view showing a microphone 81 according to Embodiment 2 of the present invention.
- the microphone 81 is different from the microphone 41 of the first embodiment only in the shape of the interposer 52. Therefore, in the microphone 81 according to the second embodiment, descriptions other than the interposer 52 are omitted.
- the cavity 70 for accommodating the signal processing circuit 53 is in the shape of a box with an open bottom surface, and the top surface is It is blocked.
- a ventilation notch 71 having one or more grooves is provided on the upper surface of the interposer 52.
- the space (back chamber) under the diaphragm 56 of the acoustic sensor 51 communicates with the package internal space 49 through the ventilation notch 71 without passing through the cavity 70 for housing the signal processing circuit 53. Yes. Therefore, the volume of the back chamber can be substantially increased, and the sensitivity of the microphone 81 can be improved.
- this microphone 81 since the acoustic sensor 51 and the signal processing circuit 53 arranged above and below are partitioned by the interposer 52, a short circuit accident between the acoustic sensor 51 and the signal processing circuit 53 can be prevented. Furthermore, since the signal processing circuit 53 is covered by the interposer 52, the signal processing circuit 53 can be protected from moisture and dust that have entered from the sound introduction hole 48.
- the interposer 52 can have various structures other than the structures described in the first and second embodiments.
- the ventilation notch 82 is provided below the interposer 52 so that the inside of the cavity 70 can also be used as a back chamber.
- a ventilation notch 71 provided on the upper surface of the interposer 52 separately from the cavity 70 is formed in a cross-shaped groove shape.
- FIG. 15 (A) and FIG. 15 (B) show still another embodiment.
- the extended electrode portion 83a extends from the pad portion 65a along the upper surface of the interposer 52
- the extended electrode portion 83b extends from the pad portion 65b along the lower surface of the interposer 52
- the distal end portion of the extended electrode portion 83a are connected by a through electrode 65.
- the extended electrode portion 84a extends from the pad portion 66a along the upper surface of the interposer 52
- the extended electrode portion 84b extends from the pad portion 66b along the lower surface of the interposer 52, and extends from the distal end portion of the extended electrode portion 84a.
- the tip portions of the electrode portions 84 b are connected by the through electrode 66.
- the through electrodes 65 and 66 can be provided at arbitrary positions.
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Abstract
Description
図1は、従来の一般的な構造のマイクロフォンを示す断面図である。このマイクロフォン11は、カバー12と回路基板13からなるパッケージ内に音響センサ15と信号処理回路17を実装したものである。音響センサ15と信号処理回路17は、回路基板13の上面に横に並べた状態で実装されており、信号処理回路17は封止樹脂21によって覆われている。音響センサ15と信号処理回路17は、ボンディングワイヤ18によって電気的に接続されており、さらに信号処理回路17は、ボンディングワイヤ19によって回路基板13の基板内配線14に接続されている。
特許文献1に開示されているマイクロフォンを図2に示す。特許文献1のマイクロフォン31では、回路基板13の上面に信号処理回路17を実装している。信号処理回路17に隣接する位置において、回路基板13の上面にはスペーサ32が固定されており、さらにスペーサ32の上面に音響センサ15が実装されている。スペーサ32には、上下に貫通する貫通孔33が開口されており、さらにスペーサ32の外部と貫通孔33内との間の静圧差を緩和させるための連通孔34が形成されている。
特許文献2には、パッケージを構成するプリント基板の上に立体回路基板を設け、立体回路基板の上に音響センサを実装するとともに、立体回路基板の中央部に形成された開口部内に信号処理回路を納めたマイクロフォンが開示されている。
以下、図3-図5を参照して本発明の実施形態1によるマイクロフォンを説明する。図3は、実施形態1に係るマイクロフォン41の構造を示す断面図である。また、図4(A)は、マイクロフォン41に用いられているインターポーザ52(支持部材)の斜視図、図4(B)は、インターポーザ52を上下反転させた状態で示す斜視図である。図5(A)及び図5(B)はインターポーザ52の断面図であって、図5(A)は図4(A)のX-X線断面を示し、図5(B)は図4(A)のY-Y線断面を示す。
つぎに、実施形態1のマイクロフォン41を製造する工程を図6-図10に基づいて説明する。インターポーザ52は、複数個が一度に作製される。図6(A)は、一体に作製された複数個のインターポーザ52を示す平面図である。図6(B)は、図6(A)のZ-Z線に沿った断面を示す。複数個のインターポーザ52は、つぎのようにして作製される。絶縁性Siウエハ73の下面に金属メッキや蒸着を施すことによってパッド部65b、66b及びダミー電極72bをそれぞれの所定位置に形成する。ついで、パッド部65b、66bの位置においてSiウエハ73に貫通孔を形成する。この貫通孔内にメッキなどで金属材料を堆積させて貫通電極65、66を作製する。さらに、貫通電極65、66の位置で、Siウエハ73の上面に金属メッキや蒸着によってパッド部65a、66aを形成する。このとき同時に、Siウエハ73の上面の所定位置にダミー電極72aを形成する。この後、一組のパッド部65a、66a及びダミー電極72aに囲まれた領域の中央部をエッチングすることにより、上下に貫通した空洞70を開口させる。また、Siウエハ73の上面を溝状にエッチングして通気用切欠71を形成する。こうして一体に作製された複数個のインターポーザ52を表したものが図6(A)及び図6(B)である。
図11は、本発明の実施形態2によるマイクロフォン81を示す断面図である。このマイクロフォン81は、実施形態1のマイクロフォン41とはインターポーザ52の形状が異なっているだけである。従って、実施形態2のマイクロフォン81においては、インターポーザ52以外の説明は省略する。
インターポーザ52は、実施形態1、2で述べたような構造以外にも種々の構造が可能である。たとえば図13(A)及び図13(B)に示す実施形態では、実施形態2のように空洞70と通気用切欠71が分離されたインターポーザ52において、空洞70とパッケージ内空間49を連通させるための通気用切欠82をインターポーザ52の下部に設け、空洞70内もバックチャンバとして利用できるようにしたものである。
48 :音導入孔、 51 :音響センサ、 52 :インターポーザ、
53 :信号処理回路、 55 :フロントチャンバ、
56 :ダイアフラム、 57 :バックプレート、
59 :固定電極板、 65、66 :貫通電極、
65a、65b、66a、66b :パッド部、
70 :空洞、 71、82 :通気用切欠、
72a、72b :ダミー電極、
83a、83b、84a、84b :延長電極部
Claims (6)
- 回路基板と、
前記回路基板の上面に実装された支持部材と、
前記支持部材の上に実装された音響センサと、
前記支持部材の内部に形成された空洞内に納めて、前記回路基板の上面に実装された信号処理回路と、
前記音響センサ、前記支持部材及び前記信号処理回路を覆って前記回路基板の上面に固定されたカバーとを備えたマイクロフォンにおいて、
前記音響センサは、上面側にフロントチャンバとなる空間が形成されるとともに、下面側にバックチャンバとなる空間を備えており、
前記支持部材は、前記カバー及び前記回路基板で囲まれた空間のうち前記音響センサ及び前記支持部材の外部に位置する空間と、前記音響センサ内の前記バックチャンバとなる空間との間で音響振動を伝達させることのできる音響伝達通路を形成されていることを特徴とするマイクロフォン。 - 前記カバーは、音響振動を導入するための音導入孔を開口され、
前記音響センサは、前記フロントチャンバとなる空間の周囲を、前記カバーの内面の前記音導入孔を囲む領域に密着させられていることを特徴とする、請求項1に記載のマイクロフォン。 - 前記支持部材は、前記音響センサと前記回路基板とを電気的に接続するための配線構造を備えていることを特徴とする、請求項1に記載のマイクロフォン。
- 前記音響伝達通路は、前記支持部材の上面部を凹状又は溝状に窪ませて形成されていることを特徴とする、請求項1に記載のマイクロフォン。
- 前記信号処理回路を収納するための前記空洞は、前記支持部材を上下に貫通していることを特徴とする、請求項1に記載のマイクロフォン。
- 前記信号処理回路を収納するための前記空洞は、前記支持部材の下面に凹設されており、
前記空洞と前記音響伝達通路とが前記支持部材によって仕切られていることを特徴とする、請求項1に記載のマイクロフォン。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11770671.3A EP2544461B8 (en) | 2011-02-21 | 2011-03-16 | Microphone |
KR1020117025832A KR101310754B1 (ko) | 2011-02-21 | 2011-03-16 | 마이크로폰 |
CN201180001986.9A CN102771142B (zh) | 2011-02-21 | 2011-03-16 | 麦克风 |
US13/318,248 US8917897B2 (en) | 2011-02-21 | 2011-03-16 | Microphone |
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JP2011-034562 | 2011-02-21 | ||
JP2011034562A JP4893860B1 (ja) | 2011-02-21 | 2011-02-21 | マイクロフォン |
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WO2012114536A1 true WO2012114536A1 (ja) | 2012-08-30 |
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PCT/JP2011/056253 WO2012114536A1 (ja) | 2011-02-21 | 2011-03-16 | マイクロフォン |
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US (1) | US8917897B2 (ja) |
EP (1) | EP2544461B8 (ja) |
JP (1) | JP4893860B1 (ja) |
KR (1) | KR101310754B1 (ja) |
CN (1) | CN102771142B (ja) |
WO (1) | WO2012114536A1 (ja) |
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Also Published As
Publication number | Publication date |
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JP4893860B1 (ja) | 2012-03-07 |
JP2012175336A (ja) | 2012-09-10 |
EP2544461A4 (en) | 2014-03-05 |
CN102771142A (zh) | 2012-11-07 |
EP2544461A1 (en) | 2013-01-09 |
KR101310754B1 (ko) | 2013-10-14 |
CN102771142B (zh) | 2015-08-19 |
US20130343590A1 (en) | 2013-12-26 |
KR20120131088A (ko) | 2012-12-04 |
EP2544461B1 (en) | 2015-10-21 |
EP2544461B8 (en) | 2016-01-20 |
US8917897B2 (en) | 2014-12-23 |
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