WO2012110365A1 - Trägersubstrat und verfahren zur herstellung von halbleiterchips - Google Patents
Trägersubstrat und verfahren zur herstellung von halbleiterchips Download PDFInfo
- Publication number
- WO2012110365A1 WO2012110365A1 PCT/EP2012/052060 EP2012052060W WO2012110365A1 WO 2012110365 A1 WO2012110365 A1 WO 2012110365A1 EP 2012052060 W EP2012052060 W EP 2012052060W WO 2012110365 A1 WO2012110365 A1 WO 2012110365A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carrier substrate
- semiconductor
- carrier
- main surface
- diode structure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 166
- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 111
- 230000005855 radiation Effects 0.000 description 24
- 239000004020 conductor Substances 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- 238000010292 electrical insulation Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Definitions
- Diode structure thus unstructured and extends over the entire lateral extent of the carrier substrate.
- a pn junction as a diode is realized in a simple manner.
- Figure 6 shows a fourth embodiment of a
- the diode structure 2 has a first layer 21, a second layer 22 and a third layer 23.
- the first layer forms the first main surface of the carrier substrate.
- the first layer 21 and the third layer 23 are each doped p-type by way of example, and the second layer 22 is n-doped. By means of the pn junctions between these layers, a first diode 24 or a second diode 25 is formed.
- the diodes 24, 25 are with respect to their
- the insulating layer 17 may include, for example, an oxide, such as silicon oxide, a nitride, such as silicon nitride or an oxynitride, such as silicon oxynitride or consist of such a material.
- the insulating layer 17 has a first opening 191 and a second opening 192. In a plan view of the carrier substrate 10, the first opening 191 overlaps with the first partial area 181 and the second opening 192 with the second partial area 182.
- the thermal connection conductor 93 and the adjoining connection region do not serve for electrical contacting of the semiconductor chip 3, but rather for efficient heat removal from the semiconductor chip.
- the active region of the semiconductor chip 3 provided for generating radiation is electrically insulated from the mounting plate 95 by means of the diode structure 2.
- a second exemplary embodiment of a component is shown schematically in sectional view in FIG. in the
- the component 9 is designed as a module in which a plurality of
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Element Separation (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201280009171.XA CN103370779B (zh) | 2011-02-16 | 2012-02-07 | 支承衬底和用于制造半导体芯片的方法 |
| KR1020137022886A KR101548442B1 (ko) | 2011-02-16 | 2012-02-07 | 캐리어 기판 및 반도체칩 제조 방법 |
| US13/984,081 US9704945B2 (en) | 2011-02-16 | 2012-02-07 | Carrier substrate and method for producing semiconductor chips |
| JP2013553867A JP5813138B2 (ja) | 2011-02-16 | 2012-02-07 | キャリア基板、および半導体チップの製造方法 |
| US15/614,917 US10224393B2 (en) | 2011-02-16 | 2017-06-06 | Method of producing semiconductor chips that efficiently dissipate heat |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011011378.9 | 2011-02-16 | ||
| DE102011011378A DE102011011378A1 (de) | 2011-02-16 | 2011-02-16 | Trägersubstrat und Verfahren zur Herstellung von Halbleiterchips |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/984,081 A-371-Of-International US9704945B2 (en) | 2011-02-16 | 2012-02-07 | Carrier substrate and method for producing semiconductor chips |
| US15/614,917 Division US10224393B2 (en) | 2011-02-16 | 2017-06-06 | Method of producing semiconductor chips that efficiently dissipate heat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012110365A1 true WO2012110365A1 (de) | 2012-08-23 |
Family
ID=45607734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2012/052060 WO2012110365A1 (de) | 2011-02-16 | 2012-02-07 | Trägersubstrat und verfahren zur herstellung von halbleiterchips |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9704945B2 (en22) |
| JP (1) | JP5813138B2 (en22) |
| KR (1) | KR101548442B1 (en22) |
| CN (1) | CN103370779B (en22) |
| DE (1) | DE102011011378A1 (en22) |
| TW (1) | TWI491084B (en22) |
| WO (1) | WO2012110365A1 (en22) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8809897B2 (en) * | 2011-08-31 | 2014-08-19 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
| JP6100598B2 (ja) * | 2013-04-25 | 2017-03-22 | スタンレー電気株式会社 | 半導体発光素子及び半導体発光装置 |
| DE102013110853B4 (de) * | 2013-10-01 | 2020-12-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterchips |
| DE102014101492A1 (de) | 2014-02-06 | 2015-08-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
| KR20160015685A (ko) * | 2014-07-31 | 2016-02-15 | 서울바이오시스 주식회사 | 보호 소자를 포함하는 발광 다이오드 칩 및 이를 포함하는 발광 장치 |
| US9922970B2 (en) * | 2015-02-13 | 2018-03-20 | Qualcomm Incorporated | Interposer having stacked devices |
| DE102015111492B4 (de) | 2015-07-15 | 2023-02-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelemente und Verfahren zur Herstellung von Bauelementen |
| DE102017104735B4 (de) | 2017-03-07 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip |
| TWI744649B (zh) * | 2019-06-18 | 2021-11-01 | 鈺橋半導體股份有限公司 | 具有跨過界面之橋接件的線路板 |
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| US20010020705A1 (en) * | 2000-03-02 | 2001-09-13 | Masataka Miyata | Semiconductor light emitting device and display device using the same |
| US6642550B1 (en) * | 2002-08-26 | 2003-11-04 | California Micro Devices | Silicon sub-mount capable of single wire bonding and of providing ESD protection for light emitting diode devices |
| DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| DE102009013085A1 (de) * | 2009-03-13 | 2010-09-16 | Siemens Aktiengesellschaft | Metallisierte Durchführungen eines Wafers mit integrierten Dioden |
| US20100301349A1 (en) * | 2005-01-26 | 2010-12-02 | Harvatek Corporation | Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same |
| WO2010136326A1 (de) * | 2009-05-28 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbarer optoelektronischer halbleiterchip und verfahren zur herstellung eines oberflächenmontierbaren optoelektronischen halbleiterchips |
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| US2980810A (en) * | 1957-12-30 | 1961-04-18 | Bell Telephone Labor Inc | Two-terminal semiconductive switch having five successive zones |
| US3023347A (en) * | 1960-07-15 | 1962-02-27 | Westinghouse Electric Corp | Oscillator having predetermined temperature-frequency characteristics |
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| TW545698U (en) * | 2001-12-28 | 2003-08-01 | United Epitaxy Co Ltd | LED packaging structure with a static charge protecting device |
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- 2012-02-07 KR KR1020137022886A patent/KR101548442B1/ko active IP Right Grant
- 2012-02-07 JP JP2013553867A patent/JP5813138B2/ja active Active
- 2012-02-07 WO PCT/EP2012/052060 patent/WO2012110365A1/de active Application Filing
- 2012-02-07 CN CN201280009171.XA patent/CN103370779B/zh active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101548442B1 (ko) | 2015-08-28 |
| US10224393B2 (en) | 2019-03-05 |
| CN103370779A (zh) | 2013-10-23 |
| DE102011011378A1 (de) | 2012-08-16 |
| TWI491084B (zh) | 2015-07-01 |
| CN103370779B (zh) | 2015-09-16 |
| TW201242124A (en) | 2012-10-16 |
| JP5813138B2 (ja) | 2015-11-17 |
| JP2014506016A (ja) | 2014-03-06 |
| US20170271438A1 (en) | 2017-09-21 |
| KR20130119496A (ko) | 2013-10-31 |
| US20140008770A1 (en) | 2014-01-09 |
| US9704945B2 (en) | 2017-07-11 |
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