Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
  • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
  • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
  • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
  • G01N27/403—Cells and electrode assemblies
  • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
  • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T436/00—Chemistry: analytical and immunological testing
  • Y10T436/14—Heterocyclic carbon compound [i.e., O, S, N, Se, Te, as only ring hetero atom]
  • Y10T436/142222—Hetero-O [e.g., ascorbic acid, etc.]
  • Y10T436/143333—Saccharide [e.g., DNA, etc.]

Definitions

• Quasi- 1 -D semiconductor nanowires are uniquely suitable for high sensitivity label- free detection applications. Their microscale to nanoscale volumes and large surface to volume ratio are respectively favorable for bulk detection, e.g., radiation, and surface sensing, for example, to detect biochemical molecules.
• Semiconductor nanowires have previously been configured as substrate-gated FET channels. Exposed Si nanowires atop an insulator layer have exhibited a limit of detection (LOD) of ⁇ 100 fM for immunoglobulins and -10 fM for DNA. These sensing nanowires have also been integrated into detection systems with microfluidic modules.
• LOD limit of detection
• Si nwFETs silicon nanowire field effect transistors
• Si nwFETs silicon nanowire field effect transistors
• a common disadvantage of conventional nwFETs is the low level of output signal which hinders the ultimate performance of the devices.
• the present invention addresses this and other needs.
• the present invention is directed to a muitiwire nanowire field effect transistor (nwFET) device.
• the device comprises a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, wherein the first end of the sensing nanowire is connected to the nanowire FET to form a node.
• the sensing nanowire and nanowire FET each comprise at least one semiconductor material.
• the first end of the nanowire FET is connected to a source electrode
• the second end of the nanowire FET is connected to a drain electrode
• the second end of the sensing nanowire is connected to a base electrode.
• the first end of the sensing nanowire is connected to the nanowire FET at an angle between about 10° and 1 70°.
• the sensing nanowire in one embodiment, is derivatized with a plurality of immobilized capture probes that are specific for a target(s) of interest.
• the sensing nanowire is derivatized with free amino groups.
• a change in pH of a solution introduced onto the device alters the charges on amino groups, and therefore, alters the electrical properties of the sensing nanowire, e.g., conductance.
• the signal from the sensing nanowire is amplified by the nanowire FET to allow for greater sensitivity.
• the nwFET device comprises a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, and the first end of the sensing nanowire is connected to the nanowire FET at about a 90° angle, to form a node, thereby creating a T-shape structure.
• the first and second ends of the sensing nanowire in one embodiment, are in the same plane as the first and second ends of the nanowire FET.
• the second end of the sensing nanowire is in a different plane than the first and second ends of the nanowire FET.
• a multiwire nanowire field effect transistor (nwFET) device comprises a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, wherein the first end of the sensing nanowire is connected to the nanowire FET to form a node, the first end of the nanowire FET is connected to a source electrode, the second end of the nanowire FET is connected to a drain electrode, and the second end of the sensing nanowire is connected to a base electrode.
• the sensing nanowire and nanowire FET each comprise at least one semiconductor material.
• the first end of the sensing nanowire is connected to the nanowire FET at an angle between about 10° and about 170°.
• the nanowires are fabricated on a silicon substrate, for example, on silicon oxide.
• the sensing nanowire and the nanowire FET have about one or more of the same dimensions (e.g., about the same height, width, aspect ratio and/or length).
• the nanowire FET sensor provided herein is used as a biosensor.
• the sensing nanowire is derivatized with a plurality of immobilized capture probes, either directly, or through the use of linker molecules.
• the immobilized capture probes are homogeneous, i.e., each probe is specific for the same target.
• the immobilized capture probes are heterogeneous, i.e., at least a first capture probe is specific for a first target and at least a second capture probe is specific for a second target.
• a method for detecting the presence or absence of a molecule in a sample comprises measuring the baseline drain current (I ) associated with a nwFET device comprising a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, wherein the sensing nanowire and nanowire FET each comprise at least one semiconductor material, the first end of the sensing nanowire is connected to the nanowire FET to form a node.
• the first end of the nanowire FET is connected to a source electrode, the second end of the nanowire FET is connected to a drain electrode, and the second end of the sensing nanowire is connected to a base electrode.
• Fig. 5 are energy band diagrams between source and drain (along the nwFET channel), and the respective current flow directions under different sensing gate biases (with VD>0 VSG>0).
• the device of the invention comprises at least two sensing nanowires, and the two sensing nanowires are connected to the nwFET at the same node. In another embodiment, the device of the invention comprises at least two sensing nanowires, and the two sensing nanowires are connected to the nwFET at different nodes.
• the length of the at least one sensing nanowire and the nwFET is independently about 20 nm, about 30 nm, about 40 nm, 50 nm, about 60 nm, about 70 nm, about 80 nm, about 90 nm, about 100 nm, about 1 10 nm, about 120 nm, about 150 nm and about 200 nm, about 500 nm, about 1 ⁇ , about 2 ⁇ , about 3 ⁇ , about 4 ⁇ , about 5 ⁇ , about 10 ⁇ , about 20 ⁇ , or about 30 ⁇ .
• the lengths of the sensing nanowire and the nanowire FET are the same. In another embodiment, the lengths of the sensing nanowire and the nanowire FET are different.
• one or more of the electrodes is fabricated from aluminum, cesium carbonate, calcium dendrite, lithium fluoride, molybdenum(VI) oxide, lanthanum nickelate, lanthanum strontium cobalt ferrite, lanthanum strontium manganite, manganese cobalt oxide, nickel oxide, nickel(II) oxide, vanadium(III) oxide, vanadium(V) oxide, graphite, carbon, platinum, tin, palladium, nickel, gold, or silver, or a combination thereof.
• the electrodes are formed by photoresist lift-off.
• Nucleic acid refers to both deoxyribonucleic acid (DNA) and ribonucleic acid (RNA). Additionally, the term “nucleic acid” encompasses artificial nucleic acid analogs such as peptide nucleic acid (PNA), morpholino-nucleic acid, locked nucleic acid (LNA), as well as glycol nucleic acid and threose nucleic acid.
• PNA peptide nucleic acid
• LNA locked nucleic acid
• bioreceptor capture probes e.g., PNA
• PNA bioreceptor capture probes
• Target molecules e.g. viral RNA
• ID drain current
• Multiplex detection is also readily accomplished with multiple T-nwFETs where each individual sensing nanowire includes a different immobilized capture probe, specific for a unique target or disease.
• a single device includes different capture probes on a single sensing nanowire, to provide for multiplex detection.
• a two-step specific binding approach is carried out.
• a test sample is introduced onto the device, and is allowed to interact with the sensing nanowire. If the test solution includes the target molecule(s), it will bind the immobilized capture probe present on the sensing nanowire, to form a specific binding pair complex. Next, the test solution is removed and an additional binding reagent, which binds the specific binding pair complex, is introduced to provide a second level of specificity.
• the target molecule is first specifically amplified prior to introducing it onto the test device.
• a polymerase chain reaction in one embodiment, is carried out on the nucleic acids in the test sample prior to introducing the test sample onto the device.
• the detection signal e.g. electronic charge
• the detection signal on each bound target molecule is amplified prior to determining the amount and/or identity of bound target molecule (e.g., nucleic acid or protein analyte).
• test sample includes one or more target molecules
• immobilized capture probes i.e., immobilized specific binding partners
• the conductance of the device is altered. An altered conductance signifies that a binding event has occurred. Degree of the change also indicates how many binding events took place.
• the nwFET device of the invention is used to detect nucleic acid target molecules, for example to detect viral nucleic acids in a diagnostic assay.
• the sensing nanowire surface is covalently functionalized with nucleic acid molecules complementary to one or more target nucleic acids, or PNA immobilized capture probes complementary to the one or more target nucleic acids.
• the test sample is introduced, which may include target nucleic acid, e.g., viral RNA target molecules (i.e., at t ⁇ in Fig. 18).
• target nucleic acid e.g., viral RNA target molecules (i.e., at t ⁇ in Fig. 18).
• the T-nwFET current increases from iank to eieaed-
• a target molecule in the test sample is not fully complementary to its specific binding partner, and therefore, a non-perfect binding pair is formed.
• the non-perfect pair comprises two nucleic acid molecules, and one nucleic acid sequence has a deletion, mismatch compared to the second nucleic acid sequence.
• the device and methods provided herein allow for the detection of variations in a protein's amino acid sequence.
• the immobilized capture probe binds a protein as well as a mutated version of the protein.
• a first protein in one embodiment, has an amino acid mutation compared to the second protein.
• the electrical properties of the device differ depending on which binding event occurs (i.e., whether the mutant or non-mutant binds).
• the immobilized capture probe (specific binding partner) is designed to be non-complementary, so that it captures the one or more target nucleic acid molecules which include the non-complementary and/or mutated sequence(s).
• sequences of two different captured nucleic acids are distinguished by the melting temperature of the various nucleic acid duplexes (i.e., dashed trace in Fig. 1 8, top).
• the sensing nanowire temperature is continuously and controllably ramped up (Fig. 18, bottom). This in turn increases the current Ideteaed (or hi an k if no target is bound to its complement/ specific binding pair member).
• the required highly localized heating required for melt analysis is accomplished using integrated resistive heaters in close proximity to the sensing nanowire (Fig. 19).
• the device is placed on a heating block to carry out melt analysis.
• the resistive heaters in one embodiment are constructed from one or more conventional integrated circuit manufacturing materials. For example, titanium, platinum, nickel, or silicon, or a combination thereof, can be used to manufacture the heaters.
• Nucleic acid duplexes e.g., RNA-PNA, RNA-RNA, DNA-DNA, DNA-RNA and DNA-PNA duplexes
• T m ⁇ melting temperature
• proteins with different amino acid sequences exhibit different melting temperatures, when binding to a different protein.
• antibodies with different amino acid sequences in one embodiment, bind the same antigen with different disassociation constants, and therefore, exhibit different melting temperatures.
• the sensing nanowire temperature is continuously increased to be slightly above T m i (i.e., the T m of the full complement), and then stabilized (Fig. 18, bottom).
• a regeneration washing step with detergent is applied to remove all melted nucleic acids and the remaining test sample solution (i.e., at t- ⁇ in Fig. 1 8).
• the sensing nanowire temperature is then ramped down. For example, if a heating block is used, the heating block is turned off. Similarly, if integrated resistive heaters are used, these are switched off to ramp down the sensing nanowire temperature. The decrease in temperature and removal of specific binding pairs return the current to hiank level.
• the multiwire nanowire FET devices provided herein allow for the formation of perfect and non-perfect binding pairs.
• thermodynamic factors are considered.
• these same factors are taken into consideration when distinguishing between the binding of two proteins with different sequences to the same immobilized capture probe (e.g., where one protein has an amino acid mutation compared to the other).
• nwFET drain current differs upon the binding of an oligonucleotide to the sensing nanowire having single base mismatch, when compared to an oligonucleotide having a two-base mismatch, or an oligonucleotide which is a perfect complement to the immobilized capture probe.
• T M values of nucleic acid duplexes are initially estimated using the nearest-neighbor thermodynamic models and subsequently verified during experimentation and device calibration.
• Factors B and C are also fulfilled by the present invention.
• the covalent immobilization of specific binding partners (i.e., immobilized capture probes) onto the sensing nanowire should be stable, e.g., dissociation of the immobilized capture probe occurs at temperatures greater than 200 °C, while the T M values for all the specific binding pairs of interest are ⁇ 100°C. Additionally, elongation does not occur because the reagents necessary for this process are not present in the test sample, even though the sensing nanowire might reach the necessary elongation temperature during cooling.
• control over the sensing nanowire temperature should also be considered. Since the nanowire ambient is warmed by local heaters (Fig. 17) or a heating block, via joule heating, the nanowire temperature can be pre-calibrated against the heaters' input current in the same sample solution environment prior to the actual target molecule(s) detection(s). It should be noted that contrary to applications that require high temperature precision (e.g., DNA melting analysis for mutation scanning and genotyping), the requirements here are more relaxed (on the order of few °C) because of the sufficiently large difference in T M of the perfect duplex and non-perfect duplex.
• the procedural duration of the detection scheme depends on both the nanowire temperature ramp and the specific binding pair (e.g., nucleic acid duplex, or protein-protein complex) dissociation rate.
• the former is determined by the heating rate of the heaters (e.g., locally integrated heaters) and sample solution volume.
• the latter is governed by the specific binding pair melting kinetics.
• the whole thermal cycle, including the regeneration washing step, in one embodiment, lasts approximately 10 minutes (see Fig. 18).
• a method for detecting the change in pH in a sample comprises measuring the baseline drain current (ID) associated with a nwFET device comprising a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, wherein the first end of the sensing nanowire is connected to the nanowire FET at an angle between about 10° and 170° (e.g., an angle between about 30° and 1 50°, or an angle between about 50° and 100°), to form a node.
• ID baseline drain current
• the first end of the nanowire FET is connected to a source electrode, the second end of the nanowire FET is connected to a drain electrode, and the second end of the sensing nanowire is connected to a base electrode.
• the sensing nanowire is derivatized with free amino groups.
• the method further comprises introducing a test sample onto the sensing nanowire, and measuring the change in ID after introduction of the sample, wherein a change in ⁇ ⁇ is associated with a change in pH of the test sample.
• a method for detecting the presence or absence of a target molecule in a sample comprises measuring the baseline drain current (ID) associated with a nwFET device comprising a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, wherein the first end of the sensing nanowire is connected to the nanowire FET at an angle between about 10° and 170° (e.g., an angle between about 30° and 150°, or an angle between about 50° and 100°), to form a node.
• ID baseline drain current
• the first end of the nanowire FET is connected to a source electrode, the second end of the nanowire FET is connected to a drain electrode, and the second end of the sensing nanowire is connected to a base electrode.
• the sensing nanowire is derivatized with a plurality of immobilized capture probes that are specific for a target(s) (analyte) of interest.
• the method further comprises introducing a test sample onto the sensing nanowire, and measuring the change in ID after introduction of the sample, wherein a change in ID is associated with the target (analyte) of interest binding the device.
• the T-nwFET of the invention is integrated into a medical device in the form of a test strip, inside a battery-operated or self-powered hand-held digital meter (similar to a glucose meter).
• a small drop of test sample e.g., blood
• the electrical properties before and after the sample is applied are compared, to determine whether the molecule of interest was present in the test sample.
• the drain current of the device is altered upon introduction of the sample onto the test strip.
• Si T-nvvFETs were designed and fabricated on silicon-on-insulator (SOI) substrate using CMOS compatible process (Fig. 9).
• P-type SIMOX Separatation by IMplanted OXygen
• SOI wafers with a resistivity of 10-20 Ohm-cm were used as a starting material.
• Each wafer a 190 nm thick SOI layer on top of 1 50 nm thick buried oxide (BOX).
• the SOI layer was first thinned down to 50 nm followed by the T-channel mesa patterning with e-beam lithography. Source, drain, and SG (base) electrodes were then formed by Pt Ti liftoff using conventional lithography. The exposed Si region was removed by reactive ion etching followed by a rapid thermal anneal at 450 °C for 10 min. to sinter the metal-Si contacts.
• the device included a 10 ⁇ long and 100 nm wide sensing nanowire and nanowire FET channel.
• the sensing Si nanowire surface was first functionalized with 3-aminopropyltriethoxysilane (APTES) molecules to form exposed amino groups (-NH 2 ) (Fig. 6). These groups act as receptors of hydrogen ions that undergo the protonation or deprotonation reactions. An increase in the ambient pH increases the negative charge density on the nanowire surface and thus changes the nanowire conductance.
• APTES 3-aminopropyltriethoxysilane
• both the sensing nanowire and channel middle node dimension should have nanoscale dimensions, i.e., the dimensions provided for the devices described herein.
• the sensing behavior of Si T-nwFET was compared with the co-fabricated Si nwFET. Images of the two devices are provided in Fig. 14.
• the sensing nanowire (sensing gate) in the T-nwFET was not passivated with a silicon nitride layer, while the rest of the device was passivated.
• the single wire device was not passivated with silicon nitride. Both devices were dipped in ethanol with 2% APTES for 1 hr. and then rinsed several times in ethanol. The devices were then baked in oven at 100 °C for 10 min. The stable APTES surface functionalization was examined with the fluorescein isothiocyanate (FITC) binding (Fig. 15, left).
• FITC fluorescein isothiocyanate
• FIG. 1 5 A sample real-time measurement of changing ambient pH by the T-nwFET is displayed in Fig. 1 5, right.
• the drain current i.e., output signal
• the drain current decreased with an increasing pH value.
• the relationship between output signal and increasing pH value depends on the V S Q and FBG-S biasing combination.
• the Si nanowire surface was functional ized with 3- aminopropyltriethoxysilane (APTES) molecules to form the amino groups (-NH 2 ) (Fig. 6).
• APTES 3- aminopropyltriethoxysilane
• Anti-PSA antibodies were immobilized onto the sensing nanowire surface via the APTES and glutaraldehyde linker molecules. After the introduction of PSA solutions (dissolved in phosphate buffered saline, PBS), specific antigen-antibody bindings occurred and resulted in measurable source-drain current change. As plotted in Fig. 20, the T-nwFET sensors deliver an at least 7 times higher sensitivity than the I-nwFET sensors.
• AGAAGGCCAATCCAGTC (SEQ ID NO: 2) are synthesized for H1N1 and H5N 1 respectively, as capture probes with an aldehyde on the N-terminus. These two sequences have been used previously to distinguish the binding of H1N1 and H5N 1 in a microfluidic device using a large surface detection platform.
• the PNA probes are covalently immobilized onto the sensing nanowire surface via commercially available APTES linker molecules.
• the negative charge on the viral nucleic acids e.g. RNA
• Each PNA capture probe is immobilized onto the sensing nanowire separately to detect viral target sequences for
• H1N1 (5'- ATGTAGGACCATGAGTTTGCAGTGAGTAGAAGGICACATTCTGGATTGCC-3', SEQ ID NO: 3) and H5N1 (5'- G AGGTC ATTG ACTGG ATTGGCCTTCTCC ACTATGTAAG ACC ATTCCGGC A-3 ' , SEQ ID NO: 4).
• the sensor (either the single wire or multiwire sensor) is then placed above a laboratory hot plate with good temperature control to implement the designed thermal cycle ( Figure 17, bottom). Since the wafer piece is very thermally conductive, the sensor temperature should be close to that of the hot plate surface.
• the temperature of the I-nwFET or T-nwFET sensing nanowire is then calibrated (with a droplet of buffer solution atop) against the hot plate reading by measuring the temperature-dependent I-nwFET or T-nwFET leakage current.

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