JP4768226B2 - 検体の高感度検出のために特別に構成されたゲート電極を有するfetセンサー - Google Patents
検体の高感度検出のために特別に構成されたゲート電極を有するfetセンサー Download PDFInfo
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- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
- G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
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Description
International Technology Roadmap for Semiconductors 、インターネット<URL : http://public.itrs.net> Bergveld, P., 1970. Development of an ion-sensitive solid-state device for neurophysiological measurements. IEEE Trans. Biomed. Eng. BME-17, 70-71 Bousse, L., Shott, J., Meindl, J.D., 1988. A process for the combined fabrication of ion sensors and CMOS circuits. IEEE Electron Device Lett. 9, 44-46 Smith, R., Huber, R.J., Janata, J., 1984. Electrostatically protected ion sensitive field effect transistors. Sensors and Actuators, 5, 127-136
2 ドレイン接点領域
3 絶縁体
4 ゲート酸化物
5 検出電極7に対する接触面Asensを持つ領域
6 ゲート酸化物4に対する接触面Agateを持つ領域
7 検出電極
8 ソース接点領域
Claims (6)
- 検体を検出するためのセンサーであって、このセンサーは、
第二のコンデンサの第一の面を構成するトランジスタの基板(1)と、
基板(1)上のソース接点領域(8)と、
基板(1)上のドレイン接点領域(2)と、
ソース接点領域(8)とドレイン接点(2)領域の間に有って、第二のコンデンサの絶縁体を形成する、基板(2)上のトランジスタのゲート酸化物(4)と、
内面と外面を有するゲート電極であって、その内面は、外面より小さく、第二のコンデンサの第二の面を構成するとともに、所定の内側の接触領域に渡ってゲート酸化物(4)と接触しており、その外面は、第二のコンデンサと直列に接続された第一のコンデンサの第一の面を形成するゲート電極(5,6)と、
第一のコンデンサの絶縁体を構成するとともに、内面と外面を有し、その内面がゲート電極の外面と接触している電気絶縁性の検出電極(7)と、
検出電極(7)の外面上に固定されて第一のコンデンサの第二の面を形成する、検体の存在を検出するための受容体と、
この受容体を固定するための検出電極(7)の外面を除いて、ソース接点領域(8)、ドレイン接点領域(2)、ゲート電極、ゲート酸化物及び検出電極(7)の全てを収容して、第一と第二の二つのコンデンサの直列回路を保持するための絶縁体(3)と、
を有し、
ゲート電極(5,6)の外面と受容体を二つの面とし、検出電極(7)を二つの面の間の絶縁体とする第一のコンデンサとゲート電極(5,6)の内面と基板(1)を二つの面とし、ゲート酸化物(4)を二つの面の間の絶縁体とする第二のコンデンサが直列に接続されており、ゲート電極(5,6)の検出電極(7)との接触面Asensがゲート電極(5,6)のゲート酸化物(4)との接触面Agateよりも大きく、そのため第一のコンデンサの容量が第二のコンデンサの容量よりも大きくなっている構成によって、トランジスタの方向に向かって電荷密度を増大させてトランジスタの検出感度を向上させているセンサー。 - 当該の接触面の面積比Agate:Asensが、1:10から1:500000までであることを特徴とする請求項1に記載のセンサー。
- ゲート電極(5,6)用の材料が、ポリシリコンであり、検出電極(7)用の材料が、SiO2 か、Ta 2 O 5 か、Al 2 O 3 か、Si 3 N 4 であることを特徴とする請求項1または2に記載のセンサー。
- ゲート電極(5)と検出電極(7)との間の領域に、ゲート電極(5)の表面としてのケイ化物層が配置されていることを特徴とする請求項1から3までのいずれか一つに記載のセンサー。
- 当該のケイ化物層用の材料が、タングステンケイ化物またはチタンケイ化物であることを特徴とする請求項4に記載のセンサー。
- ゲート電極(5,6)の横断面が、T形状に構成されていることを特徴とする請求項1から5までのいずれか一つに記載のセンサー。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10163557A DE10163557B4 (de) | 2001-12-21 | 2001-12-21 | Transistorbasierter Sensor mit besonders ausgestalteter Gateelektrode zur hochempfindlichen Detektion von Analyten |
DE10163557.5 | 2001-12-21 | ||
PCT/DE2002/004594 WO2003056322A1 (de) | 2001-12-21 | 2002-12-14 | Fet-sensor mit besonders ausgestalteter gateelektrode zur hochempfindlichen detektion von analyten |
Publications (2)
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JP2005513501A JP2005513501A (ja) | 2005-05-12 |
JP4768226B2 true JP4768226B2 (ja) | 2011-09-07 |
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JP2003556796A Expired - Fee Related JP4768226B2 (ja) | 2001-12-21 | 2002-12-14 | 検体の高感度検出のために特別に構成されたゲート電極を有するfetセンサー |
Country Status (5)
Country | Link |
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US (1) | US7632670B2 (ja) |
EP (1) | EP1456636A1 (ja) |
JP (1) | JP4768226B2 (ja) |
DE (1) | DE10163557B4 (ja) |
WO (1) | WO2003056322A1 (ja) |
Families Citing this family (26)
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DE10255755B4 (de) * | 2002-11-28 | 2006-07-13 | Schneider, Christian, Dr. | Integrierte elektronische Schaltung mit Feldeffekt-Sensoren zum Nachweis von Biomolekülen |
GB0322010D0 (en) * | 2003-09-19 | 2003-10-22 | Univ Cambridge Tech | Detection of molecular interactions using field effect transistors |
GB0323802D0 (en) * | 2003-10-10 | 2003-11-12 | Univ Cambridge Tech | Detection of molecular interactions using a metal-insulator-semiconductor diode structure |
WO2005090961A1 (ja) * | 2004-03-24 | 2005-09-29 | Japan Science And Technology Agency | 生体分子に関する形態及び情報をis−fetを利用して検出する測定法およびシステム |
ITTO20040386A1 (it) * | 2004-06-09 | 2004-09-09 | Infm Istituto Naz Per La Fisi | Dispositivo ad effetto di campo per la rilevazione di piccole quantita' di carica elettrica, come quelle generate in processi biomolecolari, immobilizzate nelle vicinanze della superficie. |
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US8541296B2 (en) * | 2011-09-01 | 2013-09-24 | The Institute of Microelectronics Chinese Academy of Science | Method of manufacturing dummy gates in gate last process |
US9689835B2 (en) | 2011-10-31 | 2017-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Amplified dual-gate bio field effect transistor |
US9459234B2 (en) | 2011-10-31 | 2016-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) | CMOS compatible BioFET |
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US8728844B1 (en) | 2012-12-05 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside CMOS compatible bioFET with no plasma induced damage |
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JPS6361944A (ja) * | 1986-09-03 | 1988-03-18 | Toshiba Corp | Fet型センサ |
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JPH05312778A (ja) * | 1992-05-14 | 1993-11-22 | Fuji Electric Co Ltd | イオン濃度センサ |
JPH0653495A (ja) * | 1992-06-18 | 1994-02-25 | Internatl Business Mach Corp <Ibm> | 高融点金属ゲート電極の製造方法および逆t型高融点金属ゲート |
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US6077733A (en) * | 1999-09-03 | 2000-06-20 | Taiwan Semiconductor Manufacturing Company | Method of manufacturing self-aligned T-shaped gate through dual damascene |
US6284613B1 (en) * | 1999-11-05 | 2001-09-04 | Chartered Semiconductor Manufacturing Ltd. | Method for forming a T-gate for better salicidation |
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JP2541081B2 (ja) * | 1992-08-28 | 1996-10-09 | 日本電気株式会社 | バイオセンサ及びバイオセンサの製造・使用方法 |
DE4232532A1 (de) * | 1992-09-29 | 1994-04-28 | Ct Fuer Intelligente Sensorik | Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren |
DE4308081A1 (de) * | 1993-03-13 | 1994-09-22 | Fraunhofer Ges Forschung | Halbleiterbauelement, insbesondere zur Ionendetektion |
US6271590B1 (en) * | 1998-08-21 | 2001-08-07 | Micron Technology, Inc. | Graded layer for use in semiconductor circuits and method for making same |
EP1212795A4 (en) * | 1999-08-18 | 2006-09-27 | Univ North Carolina State | DETECTION DEVICES USING QUANTUM EFFECT TRANSISTORS WITH CHEMICAL RELEASE |
US20020006632A1 (en) * | 2000-02-24 | 2002-01-17 | Gopalakrishnakone Ponnampalam | Biosensor |
FR2805826B1 (fr) | 2000-03-01 | 2002-09-20 | Nucleica | Nouvelles puces a adn |
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2001
- 2001-12-21 DE DE10163557A patent/DE10163557B4/de not_active Expired - Fee Related
-
2002
- 2002-12-14 EP EP02795005A patent/EP1456636A1/de not_active Withdrawn
- 2002-12-14 WO PCT/DE2002/004594 patent/WO2003056322A1/de active Application Filing
- 2002-12-14 JP JP2003556796A patent/JP4768226B2/ja not_active Expired - Fee Related
- 2002-12-14 US US10/499,751 patent/US7632670B2/en not_active Expired - Fee Related
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JPS61181956A (ja) * | 1985-02-08 | 1986-08-14 | Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai | マルチイオン感応性電界効果型トランジスタの製造方法 |
US4881109A (en) * | 1985-08-29 | 1989-11-14 | Matsushita Electric Industrial Co., Ltd. | Sensor using a field effect transistor and method of fabricating the same |
JPS62237347A (ja) * | 1986-04-08 | 1987-10-17 | Tokuyama Soda Co Ltd | 電界効果トランジスタ型ガスセンサ− |
JPS6361944A (ja) * | 1986-09-03 | 1988-03-18 | Toshiba Corp | Fet型センサ |
JP2000065791A (ja) * | 1988-11-14 | 2000-03-03 | I Stat Corp | 完全マイクロ加工バイオセンサーのための マイクロ施与システム |
JPH05312778A (ja) * | 1992-05-14 | 1993-11-22 | Fuji Electric Co Ltd | イオン濃度センサ |
JPH0653495A (ja) * | 1992-06-18 | 1994-02-25 | Internatl Business Mach Corp <Ibm> | 高融点金属ゲート電極の製造方法および逆t型高融点金属ゲート |
JPH07297398A (ja) * | 1994-04-26 | 1995-11-10 | Lg Semicon Co Ltd | 半導体素子及びその製造方法 |
JPH0982958A (ja) * | 1995-09-19 | 1997-03-28 | Matsushita Electric Ind Co Ltd | Mos型半導体装置およびその製造方法 |
US6077733A (en) * | 1999-09-03 | 2000-06-20 | Taiwan Semiconductor Manufacturing Company | Method of manufacturing self-aligned T-shaped gate through dual damascene |
US6284613B1 (en) * | 1999-11-05 | 2001-09-04 | Chartered Semiconductor Manufacturing Ltd. | Method for forming a T-gate for better salicidation |
Also Published As
Publication number | Publication date |
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DE10163557B4 (de) | 2007-12-06 |
WO2003056322A1 (de) | 2003-07-10 |
EP1456636A1 (de) | 2004-09-15 |
DE10163557A1 (de) | 2003-10-02 |
US20050040483A1 (en) | 2005-02-24 |
JP2005513501A (ja) | 2005-05-12 |
US7632670B2 (en) | 2009-12-15 |
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