JP5027296B2 - バイオセンサチップ - Google Patents
バイオセンサチップ Download PDFInfo
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- JP5027296B2 JP5027296B2 JP2010504938A JP2010504938A JP5027296B2 JP 5027296 B2 JP5027296 B2 JP 5027296B2 JP 2010504938 A JP2010504938 A JP 2010504938A JP 2010504938 A JP2010504938 A JP 2010504938A JP 5027296 B2 JP5027296 B2 JP 5027296B2
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- biosensor chip
- biosensor
- active region
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- sensor
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- 239000010410 layer Substances 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 46
- 229910052802 copper Inorganic materials 0.000 claims description 42
- 239000010949 copper Substances 0.000 claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000005516 engineering process Methods 0.000 claims description 28
- 239000003990 capacitor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 239000013545 self-assembled monolayer Substances 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 22
- 239000002094 self assembled monolayer Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 238000001465 metallisation Methods 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 14
- 230000035945 sensitivity Effects 0.000 claims description 6
- 239000000523 sample Substances 0.000 description 25
- 239000012530 fluid Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 108020004414 DNA Proteins 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 7
- 239000012964 benzotriazole Substances 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 201000010099 disease Diseases 0.000 description 6
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000000427 antigen Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 108090000623 proteins and genes Proteins 0.000 description 5
- 102000036639 antigens Human genes 0.000 description 4
- 108091007433 antigens Proteins 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000003745 diagnosis Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 102000004169 proteins and genes Human genes 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 241000894006 Bacteria Species 0.000 description 3
- 108091006146 Channels Proteins 0.000 description 3
- 108090000790 Enzymes Proteins 0.000 description 3
- 102000004190 Enzymes Human genes 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 241000700605 Viruses Species 0.000 description 3
- 239000012491 analyte Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229940088598 enzyme Drugs 0.000 description 3
- 238000009396 hybridization Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004557 single molecule detection Methods 0.000 description 3
- 108091032973 (ribonucleotides)n+m Proteins 0.000 description 2
- 102000053602 DNA Human genes 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 201000011510 cancer Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 108020004707 nucleic acids Proteins 0.000 description 2
- 102000039446 nucleic acids Human genes 0.000 description 2
- 150000007523 nucleic acids Chemical class 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 108010015776 Glucose oxidase Proteins 0.000 description 1
- 239000004366 Glucose oxidase Substances 0.000 description 1
- 241000187479 Mycobacterium tuberculosis Species 0.000 description 1
- 108050006807 Nicotinic acetylcholine receptors Proteins 0.000 description 1
- 102000019315 Nicotinic acetylcholine receptors Human genes 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 108020004682 Single-Stranded DNA Proteins 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000975 bioactive effect Effects 0.000 description 1
- 238000002306 biochemical method Methods 0.000 description 1
- 239000013060 biological fluid Substances 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 238000010170 biological method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000005013 brain tissue Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 210000003722 extracellular fluid Anatomy 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940116332 glucose oxidase Drugs 0.000 description 1
- 235000019420 glucose oxidase Nutrition 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 206010033675 panniculitis Diseases 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001184 polypeptide Polymers 0.000 description 1
- 102000004196 processed proteins & peptides Human genes 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000004304 subcutaneous tissue Anatomy 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
- G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
- G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
- G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
- G01N33/54366—Apparatus specially adapted for solid-phase testing
- G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
- G01N33/5438—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
更に本発明はバイオセンサチップの製造方法に関する。
しかし、図3には最上部のみが示されている。
センサ活性表面101のみならずセンシングポケット117も示されている。
Claims (13)
- 生物学的粒子を検出するバイオセンサチップであって、共通の基板にモノリシックに集積された複数のセンサ活性領域を具えるバイオセンサアレイとして構成されているバイオセンサチップにおいて、
各センサ活性領域は、銅材料のナノ電極を具え、生物学的粒子に対して感受性を有し、バイオセンサチップのバック・エンド・オブ・ライン部分に配置されているとともに、前記センサ活性領域の露出銅表面は、前記バイオセンサチップの製造に適用されたCMOSプロセスの最小リソグラフィフィーチャサイズの最大でも1.6倍の直径であることを特徴とするバイオセンサチップ。 - 前記センサ活性領域の露出表面は前記バイオセンサチップの製造に適用されたCMOSプロセスの最小リソグラフィフィーチャサイズの最大でも1.1倍の寸法であることを特徴とする請求項1記載のバイオセンサチップ。
- 前記センサ活性領域の露出表面は前記バイオセンサチップの製造に適用されたCMOSプロセスの最小リソグラフィフィーチャサイズの最大でも0.7倍の寸法であることを特徴とする請求項1記載のバイオセンサチップ。
- 前記センサ活性領域は前記バイオセンサチップのバック・エンド・オブ・ライン部分の上部表面に配置されていることを特徴とする請求項1記載のバイオセンサチップ。
- 前記バック・エンド・オブ・ライン部分に少なくとも一つの中間メタライゼーション構造を具え、前記センサ活性領域が前記少なくとも一つの中間メタライゼーション構造を経て前記バイオセンサチップのフロント・エンド・オブ・ライン部分に電気的に結合されていることを特徴とする請求項1記載のバイオセンサチップ。
- 前記バック・エンド・オブ・ライン部分に少なくとも部分的に形成されたキャパシタ構造を具え、該キャパシタ構造は、そのキャパシタンス値が前記センサ活性領域における検出イベントにより影響されるように構成されていることを特徴とする請求項1記載のバイオセンサチップ。
- 前記フロント・エンド・オブ・ライン部分に形成され且つ前記センサ活性領域に電気的に結合されたスイッチトランジスタを具えることを特徴とする請求項1記載のバイオセンサチップ。
- 前記センサ活性領域の表面に配置され且つ前記生物学的粒子と相互作用するように構成された1つ以上のキャプチャ分子を具えることを特徴とする請求項1記載のバイオセンサチップ。
- 前記ナノ電極の露出表面は300nmより小さい寸法であることを特徴とする請求項1記載のバイオセンサチップ。
- 前記ナノ電極は、自己組織化単分子層で被覆された銅材料を具えることを特徴とする請求項1記載のバイオセンサチップ。
- 前記バイオセンサチップの表面の一部分を形成するとともに凹部を有する電気絶縁層を具え、前記センサ活性領域の露出表面及び前記電気絶縁層が前記凹部内にセンシングポケットを形成することを特徴とする請求項1記載のバイオセンサチップ。
- エンベデッドflask又はエンベデッドDRAMのようなエンベデッドオプションを有するCMOS技術で製造されていることを特徴とする請求項1記載のバイオセンサチップ。
- 基板が、IV族半導体、III−V族半導体からなる群から選ばれる一つの半導体を具える半導体基板であることを特徴とする請求項1記載のバイオセンサチップ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07107118.7 | 2007-04-27 | ||
EP07107118 | 2007-04-27 | ||
PCT/IB2008/051538 WO2008132656A2 (en) | 2007-04-27 | 2008-04-22 | A biosensor chip and a method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010525360A JP2010525360A (ja) | 2010-07-22 |
JP5027296B2 true JP5027296B2 (ja) | 2012-09-19 |
Family
ID=39832593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010504938A Expired - Fee Related JP5027296B2 (ja) | 2007-04-27 | 2008-04-22 | バイオセンサチップ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100052080A1 (ja) |
EP (1) | EP2140256B1 (ja) |
JP (1) | JP5027296B2 (ja) |
CN (1) | CN101669025B (ja) |
TW (1) | TW200907337A (ja) |
WO (1) | WO2008132656A2 (ja) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101478540B1 (ko) * | 2007-09-17 | 2015-01-02 | 삼성전자 주식회사 | 트랜지스터의 채널로 나노 물질을 이용하는 바이오 센서 및그 제조 방법 |
WO2009047703A1 (en) | 2007-10-12 | 2009-04-16 | Nxp B.V. | A sensor, a sensor array, and a method of operating a sensor |
EP2255177B1 (en) | 2008-03-14 | 2012-06-20 | Nxp B.V. | Sensor device for detecting particles |
WO2009122314A1 (en) | 2008-03-31 | 2009-10-08 | Nxp B.V. | A sensor chip and a method of manufacturing the same |
US8835247B2 (en) | 2008-05-13 | 2014-09-16 | Nxp, B.V. | Sensor array and a method of manufacturing the same |
US20100089135A1 (en) * | 2008-10-10 | 2010-04-15 | Nxp B.V. | Device and method for measuring sensor chips |
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-
2008
- 2008-04-22 US US12/595,119 patent/US20100052080A1/en not_active Abandoned
- 2008-04-22 EP EP08737943A patent/EP2140256B1/en active Active
- 2008-04-22 JP JP2010504938A patent/JP5027296B2/ja not_active Expired - Fee Related
- 2008-04-22 CN CN200880013443.7A patent/CN101669025B/zh active Active
- 2008-04-22 WO PCT/IB2008/051538 patent/WO2008132656A2/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
EP2140256A2 (en) | 2010-01-06 |
WO2008132656A2 (en) | 2008-11-06 |
WO2008132656A3 (en) | 2008-12-24 |
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TW200907337A (en) | 2009-02-16 |
CN101669025A (zh) | 2010-03-10 |
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