WO2012060091A1 - Procédé de formation de conducteurs à la surface d'une structure tridimensionnelle, structure intermédiaire pour obtenir une structure tridimensionnelle portant des conducteurs à sa surface, ainsi que structure tridimensionnelle portant des conducteurs à sa surface - Google Patents

Procédé de formation de conducteurs à la surface d'une structure tridimensionnelle, structure intermédiaire pour obtenir une structure tridimensionnelle portant des conducteurs à sa surface, ainsi que structure tridimensionnelle portant des conducteurs à sa surface Download PDF

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WO2012060091A1
WO2012060091A1 PCT/JP2011/006111 JP2011006111W WO2012060091A1 WO 2012060091 A1 WO2012060091 A1 WO 2012060091A1 JP 2011006111 W JP2011006111 W JP 2011006111W WO 2012060091 A1 WO2012060091 A1 WO 2012060091A1
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convex body
insulating
laser
base material
circuit pattern
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PCT/JP2011/006111
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English (en)
Japanese (ja)
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博光 高下
剛 武田
優子 今野
弘明 藤原
愼悟 吉岡
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パナソニック株式会社
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Publication of WO2012060091A1 publication Critical patent/WO2012060091A1/fr

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/119—Details of rigid insulating substrates therefor, e.g. three-dimensional details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09845—Stepped hole, via, edge, bump or conductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Definitions

  • the present invention relates to a method of wiring to the surface of a three-dimensional structure, an intermediate structure for obtaining a three-dimensional structure having wiring on the surface, and a three-dimensional structure having wiring on the surface.
  • Patent Document 1 describes the following method for manufacturing an electric circuit. First, a resin film is formed on the surface of the insulating substrate. Next, a circuit pattern is formed by forming grooves and / or holes having a desired shape and depth by laser processing on the insulating base material from the outer surface side of the resin film. Next, a plating catalyst or a precursor thereof is deposited on the surface of the circuit pattern of the insulating substrate and the surface of the resin film covering the insulating substrate. Next, the resin film is peeled from the insulating substrate. Next, the electroless plating is applied to the insulating base material from which the resin film has been peeled, thereby forming the plating only on the circuit pattern. According to this technique, the outline of the circuit pattern can be maintained with high accuracy by laser processing, and occurrence of short circuits and migration is suppressed.
  • Patent Document 2 discloses the following technique as a technique for forming wiring on the surface of a three-dimensional structure such as a circuit board or a semiconductor package.
  • a semiconductor chip mounted on an insulating substrate is covered with an insulating resin.
  • a resin film is formed on the surface of the insulating resin and the surface of the insulating substrate.
  • a wiring groove having a depth equal to or greater than the thickness of the resin film is formed.
  • a plating catalyst or a precursor thereof is deposited on the surface of the wiring groove.
  • the resin film is removed by dissolving or swelling.
  • an electroless plating film is formed only on the portion where the plating catalyst formed from the plating catalyst or its precursor remains.
  • JP 2010-80946 A (paragraph 0015) International Publication No. WO2010 / 087336 (paragraph 0100, paragraphs 0126 to 0131, FIG. 12, and FIGS. 15 to 19)
  • the top surface is parallel to the surface of the insulating base material and the side surface is perpendicular to the surface of the insulating base material when the semiconductor chip mounted on the insulating base material is coated with the insulating resin.
  • a convex body is formed of an insulating resin.
  • the arrangement position or orientation of the laser irradiation device is changed or a three-dimensional structure (work) is mounted so that the laser strikes the side surface of the convex body satisfactorily. It is necessary to change the arrangement position and orientation of the stage that is placed. Such an operation is time consuming and causes a decrease in productivity. Further, when it is necessary to modify the laser irradiation apparatus or the stage so that such a change is possible, the production cost is also increased.
  • the convex shape when forming wiring on the surface of a three-dimensional structure having a convex body, the convex shape can be obtained by simply irradiating the laser in one direction without changing the arrangement position and orientation of the laser irradiation device and the stage.
  • the object is to form a good circuit pattern on the body.
  • the present invention is a method for wiring to the surface of a three-dimensional structure, wherein a convex body forming step of forming a convex body with an insulating resin on the surface of the insulating base, the surface of the convex body, and the insulating base A resin film forming step for forming a resin film on the surface, a circuit pattern by forming grooves and / or holes having a desired shape and depth having a depth exceeding the thickness of the resin film by laser processing from the outer surface side A circuit pattern forming step of forming a plating catalyst, a plating catalyst deposition step of depositing a plating catalyst or a precursor thereof on the surface of the circuit pattern and the surface of the resin coating, a resin coating removing step of removing the resin coating, and a plating catalyst or A plating film forming step of forming an electroless plating film only in a portion where the plating catalyst formed from the precursor remains, and the convex body forming step is inclined with respect to the surface of the insulating step
  • Another aspect of the present invention is an intermediate structure for obtaining a three-dimensional structure having wiring provided on the surface thereof, and has an insulating base and a convex shape formed of an insulating resin on the surface of the insulating base. And the convex body has an inclined surface inclined with respect to the surface of the insulating base material.
  • another aspect of the present invention is a method for wiring to the surface of a three-dimensional structure, wherein an insulating resin layer forming step of forming an insulating resin layer including a convex body with an insulating resin on the surface of an insulating base material, insulation Forming a resin film on the surface of the resin layer, forming a groove and / or hole with a desired shape and depth having a depth exceeding the thickness of the resin film by laser processing from the outer surface side.
  • the insulating resin layer including a convex shape having an inclined surface which is inclined to form, in the circuit pattern forming step, and irradiating the laser in a direction perpendicular to the surface of the insulating substrate.
  • Another aspect of the present invention is an intermediate structure for obtaining a three-dimensional structure provided with wiring on the surface, and is formed of an insulating base material and an insulating resin on the surface of the insulating base material. And an insulating resin layer including a convex body, wherein the convex body has an inclined surface that is inclined with respect to the surface of the insulating substrate.
  • the other aspect of the present invention is a method for wiring to the surface of a three-dimensional structure, and includes a convex body forming step of forming a convex body with an insulating resin on the surface of an insulating base material, the surface of the convex body, and A resin film forming step for forming a resin film on the surface of the insulating substrate, and forming a groove and / or hole having a desired shape and depth having a depth exceeding the thickness of the resin film by laser processing from the outer surface side.
  • another aspect of the present invention is a method for wiring to the surface of a three-dimensional structure, wherein an insulating resin layer forming step of forming an insulating resin layer including a convex body with an insulating resin on the surface of an insulating base material, insulation Forming a resin film on the surface of the resin layer, forming a groove and / or hole with a desired shape and depth having a depth exceeding the thickness of the resin film by laser processing from the outer surface side.
  • Another aspect of the present invention is a three-dimensional structure provided with wiring on a surface obtained by the wiring method.
  • the wiring when the wiring is formed on the surface of the three-dimensional structure having the convex shape body by providing the inclined surface on the convex shape body, the arrangement position and direction of the laser irradiation apparatus and the stage are changed.
  • the circuit pattern can be satisfactorily formed on the convex body simply by irradiating the laser in one direction.
  • the surface is parallel to the surface of the insulating base material, compared with the case where the laser is irradiated.
  • FIG. 1 is a cross-sectional view for explaining the steps of the wiring method according to the first and third embodiments of the present invention.
  • FIG. 2 is a plan view showing an example of a three-dimensional structure obtained by the wiring methods according to the first and third embodiments and provided with wiring on the surface.
  • FIG. 3 is a cross-sectional view for explaining the steps of the wiring method according to the second and fourth embodiments of the present invention.
  • 4A to 4D are cross-sectional views showing various structures of the convex body.
  • FIG. 5 is a cross-sectional view showing yet another structure of the convex body.
  • FIG. 6 is a cross-sectional view illustrating yet another structure of the convex body.
  • FIG. 7 is a cross-sectional view for showing specifications of each part of the convex body.
  • a circuit pattern including a wiring groove is formed by laser processing, whereby a miniaturized high-density circuit pattern can be obtained with high accuracy.
  • a laser is irradiated from above the convex shape body in a direction perpendicular to the surface of the insulating base material.
  • the laser strikes the upper surface of the convex body and the surface of the insulating substrate perpendicularly, and a circuit pattern is formed satisfactorily.
  • the laser does not strike the side surface of the convex body effectively, and the circuit pattern is not formed well. This is because, conventionally, the side surface of the convex body stands perpendicular to the surface of the insulating base material. If the circuit pattern is not formed well, disconnection of the wiring occurs on the side surface of the convex body.
  • the present inventors do not make the side surface of the convex body a vertical surface with respect to the surface of the insulating base material, but make it an inclined surface that is inclined so that the laser irradiated from above effectively hits it. Without changing the position and orientation of the stage on which the stage is placed, the circuit pattern is excellent on the side of the convex body by simply moving the laser by irradiating it in the direction perpendicular to the surface of the insulating substrate. Focusing on the formation, the present invention was completed.
  • the present inventors do not make the side surface of the convex body a vertical surface with respect to the surface of the insulating base material, but an inclined surface that is inclined so that the laser irradiated from above effectively hits the surface of the convex body.
  • a laser irradiation device or workpiece is placed by increasing the laser energy per unit time compared to irradiating a laser parallel to the surface of the insulating substrate.
  • the circuit pattern can be satisfactorily formed on the side surface of the convex body simply by irradiating and moving the laser only in the direction perpendicular to the surface of the insulating substrate without changing the arrangement position and orientation of the stage. In view of this, the present invention has been completed.
  • the shape of this convex body can be made a desired shape. Therefore, the side surface of the convex body can be easily formed as an inclined surface that is inclined with respect to the surface of the insulating base material. On the other hand, if the semiconductor chip is not covered with an insulating resin, the side surface of the semiconductor chip itself must be inclined, which is not easy.
  • the features of the present invention are one of the features of the present invention.
  • reference numeral 10 is a three-dimensional structure
  • reference numerals 10A and 10B are intermediate structures
  • reference numeral 11 is an insulating substrate
  • reference numeral 11a is a connection terminal of the insulating base
  • reference numeral 12 is a semiconductor chip
  • reference numeral 12a is a connection terminal of the semiconductor chip.
  • Reference numeral 13 is an insulating resin
  • reference numeral 13a is a convex body
  • reference numeral 13b is an inclined surface of the convex body
  • reference numeral 14 is a resin film
  • reference numeral 15 is a circuit pattern
  • reference numeral 16 is a plating catalyst
  • reference numeral 17 is a plating film (wiring).
  • Reference numeral 18 denotes a sealing resin.
  • a structure in which an electronic member is mounted on an insulating base material 11 is prepared.
  • the electronic member is a plurality of semiconductor chips 12 (stacked chips) stacked in multiple stages.
  • Examples of the semiconductor chip 12 include an IC, an LSI, a VLSI, and an LED chip.
  • a connection terminal 11 a is provided on the surface of the insulating substrate 11, and a connection terminal 12 a is provided on the surface of the semiconductor chip 12. These connection terminals 11a and 12a are exposed on the surface of the structure.
  • connection terminal 11a, 12a is embed
  • the connection terminal 11a, 12a is the insulating base material 11 or It may be formed on the surface of the semiconductor chip 12 (projecting from the surface).
  • the connection terminal 11a may be a part of a circuit.
  • the mounting method of the stack chip on the insulating base material 11 is not particularly limited.
  • the stack chip can be mounted on the insulating substrate 11 with the adhesive layer interposed therebetween.
  • the stacking method of the semiconductor chips 12 in the stack chip is not limited.
  • the semiconductor chips 12 can be stacked with an adhesive layer interposed therebetween.
  • the electronic member is covered with an insulating resin 13.
  • the convex body 13 a is formed on the surface of the insulating base material 11 by the insulating resin 13.
  • the convex body 13a having the inclined surface 13b inclined with respect to the surface of the insulating base material 11 is formed (a convex body forming step).
  • an electronic member previously coated with the insulating resin 13 may be mounted on the insulating base material 11. Also by this, the convex body 13a (the convex body 13a having the inclined surface 13b inclined with respect to the surface of the insulating base material 11) is formed on the surface of the insulating base material 11 by the insulating resin 13.
  • the inclined surface 13b of the convex body 13a is continuous, but the inclined surface is divided into a plurality of steps as shown by chain lines following the stepped stack chip. It may be.
  • the intermediate structure 10A is obtained.
  • the intermediate structure 10 ⁇ / b> A is an intermediate structure for obtaining the three-dimensional structure 10 having the wiring 17 on the surface.
  • the intermediate structure 10 ⁇ / b> A includes an insulating base material 11 and a convex body 13 a formed on the surface of the insulating base material 11 with an insulating resin 13.
  • the convex body 13 a has an inclined surface 13 b that is inclined with respect to the surface of the insulating substrate 11.
  • a resin film 14 is formed on the surface of the convex body 13a and the surface of the insulating substrate 11 where the convex body 13a is not formed (resin film forming step).
  • the intermediate structure 10B is obtained.
  • the intermediate structure 10B is also an intermediate structure for obtaining the three-dimensional structure 10 having the wiring 17 provided on the surface.
  • the intermediate structure 10B is formed to be removable on the insulating base 11, the convex body 13a formed of the insulating resin 13 on the surface of the insulating base 11, and the surface of the convex body 13a and the surface of the insulating base 11.
  • the resin film 14 is provided.
  • the convex body 13 a has an inclined surface 13 b that is inclined with respect to the surface of the insulating substrate 11.
  • circuit pattern 15 is formed on the surface of the convex body 13a and the surface of the insulating base material 11.
  • a laser is irradiated in a direction perpendicular to the surface of the insulating substrate 11.
  • the laser is moved in a direction parallel to the surface of the insulating substrate 11 (circuit pattern forming step of the first embodiment).
  • the laser is irradiated to a surface parallel to the surface of the insulating base material 11 (in the example shown, the surface of the insulating base material 11 and the upper surface of the convex body 13a). As compared with the case of doing so, the energy of the laser per unit time is increased (circuit pattern forming step of the third embodiment).
  • the wiring groove of the circuit pattern 15 is continuously formed on the upper surface of the convex body 13 a, the inclined surface (side surface) 13 b of the convex body 13 a, and the surface of the insulating base material 11, and one end thereof is a connection terminal 11 a of the insulating base material 11. Has reached.
  • the communication hole of the circuit pattern 15 extends downward from the wiring groove and reaches the connection terminal 12 a of the semiconductor chip 12.
  • the plating catalyst 16 or its precursor is deposited on the surface of the circuit pattern 15 and the surface of the resin film 14 (plating catalyst deposition step).
  • the resin film 14 is removed by dissolving or swelling (resin film removing step).
  • an electroless plating film (wiring) 17 is formed only on the portion where the plating catalyst 16 or the plating catalyst formed from the precursor remains. (Plating film forming step). Thereby, the three-dimensional structure 10 with the wiring 17 provided on the surface is obtained. In the three-dimensional structure 10, the convex body 13 a and the wiring 17 are later sealed with a sealing resin 18 to form a semiconductor package.
  • FIG. 2 is a plan view showing an example of the three-dimensional structure 10 obtained by the wiring method according to the first and third embodiments and provided with the wiring 17 on the surface.
  • reference numeral 13d denotes the upper surface of the convex body.
  • the wirings 17... 17 are continuously formed across the surface of the insulating base 11, the inclined surface 13b of the convex body 13a, and the upper surface 13d of the convex body 13a.
  • the wirings 17 ... 17 are well formed on the inclined surface 13b of the convex body 13a as well as the surface of the insulating substrate 11 and the upper surface 13d of the convex body 13a, and no disconnection or the like occurs.
  • reference numeral 10 is a three-dimensional structure
  • reference numerals 10A and 10B are intermediate structures
  • reference numeral 11 is an insulating substrate
  • reference numeral 11a is a connection terminal of the insulating base
  • reference numeral 12 is a semiconductor chip
  • reference numeral 12a is a connection terminal of the semiconductor chip.
  • Reference numeral 13 is an insulating resin
  • reference numeral 13a is a convex body
  • reference numeral 13b is an inclined surface of the convex body
  • reference numeral 13c is an insulating resin layer
  • reference numeral 14 is a resin film
  • reference numeral 15 is a circuit pattern
  • reference numeral 16 is a plating catalyst
  • reference numeral Reference numeral 17 denotes a plating film (wiring)
  • reference numeral 18 denotes a sealing resin.
  • the electronic member is a plurality of semiconductor chips 12 (stacked chips) stacked in multiple stages.
  • the semiconductor chip 12 include an IC, an LSI, a VLSI, and an LED chip.
  • a connection terminal 11 a is provided on the surface of the insulating substrate 11, and a connection terminal 12 a is provided on the surface of the semiconductor chip 12. These connection terminals 11a and 12a are exposed on the surface of the structure.
  • connection terminal 11a, 12a is embed
  • the connection terminal 11a, 12a is the insulating base material 11 or It may be formed on the surface of the semiconductor chip 12 (projecting from the surface).
  • the connection terminal 11a may be a part of a circuit.
  • the mounting method of the stack chip on the insulating base material 11 is not particularly limited.
  • the stack chip can be mounted on the insulating substrate 11 with the adhesive layer interposed therebetween.
  • the stacking method of the semiconductor chips 12 in the stack chip is not limited.
  • the semiconductor chips 12 can be stacked with an adhesive layer interposed therebetween.
  • the insulating base material 11 may be, for example, a metal plate for heat dissipation.
  • the connection terminal 11a is provided in the insulating resin 13 described below.
  • the electronic member and the insulating base material 11 are covered with an insulating resin 13.
  • the insulating resin layer 13c including the convex body 13a is formed on the surface of the insulating base material 11 by the insulating resin 13.
  • the insulating resin layer 13c including the convex body 13a having the inclined surface 13b inclined with respect to the surface of the insulating base material 11 is formed (insulating resin layer forming step).
  • an electronic member previously coated with the insulating resin 13 may be mounted on the insulating base material 11. Also by this, the convex body 13a (the convex body 13a having the inclined surface 13b inclined with respect to the surface of the insulating base material 11) is formed on the surface of the insulating base material 11 by the insulating resin 13.
  • the inclined surface 13b of the convex body 13a is continuous, but the inclined surface is divided into a plurality of steps as shown by chain lines following the stepped stack chip. It may be.
  • the intermediate structure 10A is obtained.
  • the intermediate structure 10 ⁇ / b> A is an intermediate structure for obtaining the three-dimensional structure 10 having the wiring 17 on the surface.
  • the intermediate structure 10 ⁇ / b> A includes an insulating base material 11 and an insulating resin layer 13 c including a convex body 13 a formed of an insulating resin 13 on the surface of the insulating base material 11.
  • the convex body 13 a has an inclined surface 13 b that is inclined with respect to the surface of the insulating substrate 11.
  • a resin film 14 is formed on the surface of the insulating resin layer 13c (resin film forming step).
  • the intermediate structure 10B is obtained.
  • the intermediate structure 10B is also an intermediate structure for obtaining the three-dimensional structure 10 having the wiring 17 provided on the surface.
  • the intermediate structure 10B is formed to be removable on the surface of the insulating base material 11, the insulating resin layer 13c including the convex body 13a formed of the insulating resin 13 on the surface of the insulating base material 11, and the surface of the insulating resin layer 13c.
  • the resin film 14 is provided.
  • the convex body 13 a has an inclined surface 13 b that is inclined with respect to the surface of the insulating substrate 11.
  • circuit pattern 15 is formed on the surface of the insulating resin layer 13c including the convex body 13a.
  • a laser is irradiated in a direction perpendicular to the surface of the insulating substrate 11.
  • the laser is moved in a direction parallel to the surface of the insulating substrate 11 (circuit pattern forming process of the second embodiment).
  • the surface is parallel to the surface of the insulating base material 11 (in the example shown, parallel to the surface of the insulating base material 11 in the insulating resin layer 13c).
  • the energy of the laser per unit time is increased as compared with the case of irradiating a laser on a portion having a smooth surface and the upper surface of the convex body 13a (circuit pattern forming step of the fourth embodiment).
  • the wiring groove of the circuit pattern 15 is continuously formed on the upper surface of the convex body 13a, the inclined surface (side surface) 13b of the convex body 13a, and the surface of the insulating resin layer 13c.
  • the communication hole of the circuit pattern 15 extends downward from the wiring groove and reaches the connection terminal 11 a of the insulating base 11 and the connection terminal 12 a of the semiconductor chip 12.
  • the plating catalyst 16 or its precursor is deposited on the surface of the circuit pattern 15 and the surface of the resin film 14 (plating catalyst deposition step).
  • the resin film 14 is removed by dissolving or swelling (resin film removing step).
  • an electroless plating film (wiring) 17 is formed only on the portion where the plating catalyst 16 or the plating catalyst formed from the precursor remains. (Plating film forming step). Thereby, the three-dimensional structure 10 with the wiring 17 provided on the surface is obtained. In the three-dimensional structure 10, the insulating resin layer 13 c including the convex body 13 a and the wiring 17 are later sealed with a sealing resin 18 to form a semiconductor package.
  • FIGS. 4 (A) to 4 (D) are diagrams corresponding to the stage when the (B) convex body forming process of the first and third embodiments is completed, or indicated by a chain line (insulating resin layer 13c) in the drawings.
  • FIGS. 5 and 6 are diagrams corresponding to the stage where the (G) plating film forming process of the first and third embodiments is completed.
  • reference numeral 19 denotes a circuit-mounted element such as a chip inductor or a capacitor
  • reference numeral 20 denotes a multilayer circuit board (stack chip in FIG. 6)
  • reference numeral 20a denotes a connection terminal of each circuit board (each chip in FIG. 6)
  • reference numeral 20b is a connection wiring (rewiring in FIG. 6) that connects the connection terminal and the wiring.
  • a plurality of semiconductor chips 12 stack chips stacked in multiple stages are mounted on an insulating base material 11, and the stack chips are formed of an insulating resin 13. It was formed by being coated with.
  • the side surface of each semiconductor chip 12 is perpendicular to the surface of the insulating base material 11. Therefore, the stack chip does not have an inclined surface that is inclined with respect to the surface of the insulating base material 11. That is, the stack chip (electronic member) does not have an inclined surface, but the convex body 13a covering the stack chip is formed so as to have an inclined surface 13b.
  • each semiconductor chip 12 is inclined with respect to the surface of the insulating base material 11, so that the stack chip is inclined with respect to the surface of the insulating base material 11. It may have an inclined surface. That is, the stack chip (electronic member) has an inclined surface, and the convex body 13a covering the stack chip is formed so as to follow the inclined surface 13b.
  • the stack chip has one continuous inclined surface
  • the convex body 13a also has one continuous inclined surface 13b following this, but for example, a dotted line
  • the inclined surface 13b of the convex body 13a may be divided into a plurality of steps following the stepped stack chip.
  • the convex body 13 a is formed by mounting a single semiconductor chip 12 on an insulating base material 11 and covering the single semiconductor chip 12 with an insulating resin 13. It may be formed.
  • the side surface of the semiconductor chip 12 (electronic member) is inclined with respect to the surface of the insulating substrate 11, and the convex body 13a covering the semiconductor substrate 12 is formed so as to follow the inclined surface 13b.
  • the present invention is not limited to this, and the side surface of the semiconductor chip 12 (electronic member) is perpendicular to the surface of the insulating substrate 11, but the convex body 13a covering this is formed to have an inclined surface 13b. It may be a thing.
  • the convex body 13a may be a protrusion or bump or the like coated with an insulating resin 13.
  • the convex body 13 a has a circuit mounting element 19 such as a chip inductor or a capacitor mounted on the insulating base material 11, and the circuit mounting element 19 is covered with the insulating resin 13. It may be formed by.
  • the side surface of the circuit mounting element 19 (electronic member) is perpendicular to the surface of the insulating substrate 11, but the convex body 13a covering this is formed so as to have an inclined surface 13b. is there.
  • the present invention is not limited to this, and the side surface of the circuit mounting element 19 (electronic member) is inclined with respect to the surface of the insulating base material 11, and the convex body 13a covering this also has an inclined surface 13b. It may be molded into.
  • the convex body 13a may be a protrusion or bump or the like coated with an insulating resin 13.
  • the convex body 13a may be formed by molding the insulating resin 13 into a convex shape.
  • the illustrated example is a case where the convex body 13a is solid, but it may be hollow depending on the situation.
  • the convex body 13a may cover an electronic member that is not electrically connected to the wiring 17 formed on the surface of the three-dimensional structure 10, or a constituent member other than the electronic member such as a buffer material.
  • the convex body 13 a may be formed by covering the multilayer circuit board 20 mounted on the insulating base material 11 with the insulating resin 13.
  • the connection terminal 20a of each circuit board constituting the multilayer circuit board 20 is electrically connected to the wiring 17 formed on the surface of the three-dimensional structure 10 (more specifically, the inclined surface 13b of the convex body 13a) via the connection wiring 20b. ing.
  • the wiring 17 further reaches the connection terminal 11 a of the insulating base material 11.
  • the wiring 17 functions as an external wiring for interlayer connection of the multilayer circuit board 20.
  • the reference numeral 11 may be replaced with an insulating base material and may be a lowermost circuit board of the multilayer circuit board 20. That is, the entire three-dimensional structure 10 may be the multilayer circuit board 20.
  • the side surfaces where the wiring 17 is not formed are not inclined surfaces.
  • connection wiring 20b extends horizontally inside the convex body 13a. This can be created, for example, as follows. One end of the connection wiring 20b is connected to each connection terminal 20a of the multilayer circuit board 20 in advance. When creating the convex body 13a, the connection wiring 20b is extended horizontally, and the other end of the connection wiring 20b faces the inclined surface 13b of the convex body 13a. In the circuit pattern forming step, a wiring groove is formed so as to sequentially pass through the other end of the connection wiring 20b extending from the circuit board to be connected.
  • the convex body 13 a may be formed by covering the stack chip 20 mounted on the insulating base material 11 with the insulating resin 13.
  • the connection terminals 20a of the chips constituting the stack chip 20 are electrically connected to the wiring 17 formed on the surface of the three-dimensional structure 10 (more specifically, the inclined surface 13b of the convex body 13a) via the rewiring 20b. .
  • the wiring 17 further reaches the connection terminal 11 a of the insulating base material 11.
  • the wiring 17 functions as an external wiring (which can replace the through silicon via (TSV)) for interchip connection of the stack chip 20.
  • TSV through silicon via
  • the convex body 13a has an inclined surface 13b that is inclined with respect to the surface of the insulating base material 11. Therefore, the overall shape of the convex body 13a is typically a truncated pyramid shape or the like. It may be trapezoidal. Alternatively, depending on the situation, a pyramid shape or a conical shape that does not have the upper surface 13d parallel to the surface of the insulating base 11 may be used. Further, it may be a hemispherical shape.
  • each convex-shaped body 13a may have the same structure among the structures as described above, or may have a different structure (mixed mounting).
  • FIG. 7 is a diagram corresponding to the (D) circuit pattern forming step of the first embodiment.
  • symbol X is a laser irradiation device
  • symbol Y is a focal position of the laser
  • symbol Z is a corner where the upper surface of the convex body and the inclined surface intersect
  • symbol L is a laser (laser beam)
  • symbol m is a focus offset.
  • the symbol ⁇ is the inclination angle of the inclined surface of the convex body with respect to the surface of the insulating substrate.
  • the reference surface is the surface of the resin film 14, the surface of the insulating resin 13 below the resin film 14, or the surface of the insulating base material 11.
  • the inclination angle ⁇ of the inclined surface 13b of the convex body 13a is 10 ° to 83 ° with respect to the surface of the insulating base material 11 when the surface angle of the insulating base material 11 is 0 °. It is.
  • the upper limit is 80 ° or less. More preferably, the upper limit is 75 ° or less. More preferably, the upper limit is 60 ° or less. Particularly preferably, the upper limit is 45 ° or less.
  • a corner portion (a corner portion where the upper surface 13d and the inclined surface 13b intersect) Z where the plurality of surfaces of the convex body 13a intersect is chamfered or curved (R) as illustrated.
  • R chamfered or curved
  • the overall shape of the convex body 13a is a truncated pyramid shape, a pyramid shape, or the like
  • a corner portion Z (including the apex of the pyramid shape) where adjacent side surfaces intersect is also chamfered or curved. That is, all the corners Z of the convex body 13a are obtuse.
  • the size of the three-dimensional structure 10 and the convex body 13a can be variously changed according to the use of the three-dimensional structure 10 or the like.
  • the length or width (symbol a) of the three-dimensional structure 10 is about 1 mm to several tens of centimeters
  • the length or width (symbol b) of the base of the convex body 13a is about 10 ⁇ m to several tens of centimeters.
  • the height (symbol c) is about 10 ⁇ m to several mm.
  • the laser irradiation apparatus X is not particularly limited.
  • a carbon dioxide laser, excimer laser, UV-YAG laser or the like can be preferably used.
  • the width of the wiring groove of the circuit pattern 15 to be formed is, for example, about 20 ⁇ m, and it is possible to form a finer circuit pattern with a finer density depending on the situation.
  • the various parameters of laser irradiation are the types of insulating resin 13 constituting the convex body 13a, the types of material constituting the insulating base material 11, and the inclination angle of the inclined surface 13b of the convex body 13a. It can vary depending on ⁇ and the like.
  • the frequency of the laser L is about 10 to 100 Hz, preferably about 40 to 70 Hz, more preferably about 50 to 70 Hz, and further preferably about 60 to 70 Hz.
  • the moving speed of the laser L (moving speed in the direction parallel to the surface of the insulating base material 11: processing speed) is about 100 to 200 mm / sec, preferably about 120 to 150 mm / sec, more preferably 120 to 140 mm / sec.
  • the degree is more preferably about 120 to 130 mm / second.
  • the output of the laser L is about 0.1 to 1.0 W, preferably about 0.3 to 0.5 W, more preferably about 0.35 to 0.5 W, and further preferably about 0.4 to 0.5 W. is there.
  • the frequency, speed, and output settings change if the laser processing machine changes.
  • a surface parallel to the surface of the insulating base material 11 (in the illustrated example, the surface of the insulating base material 11 and The energy of the laser L per unit time is increased as compared with the case where the laser L is irradiated on the upper surface 13d) of the convex body 13a.
  • This increase in energy is a combination of one or more of increasing the frequency of laser L, decreasing the moving speed (processing speed) of laser L, and increasing the output of laser L. It can be realized by doing.
  • the energy of the laser L per unit time is further increased as the inclination angle ⁇ of the inclined surface 13b of the convex body 13a is larger.
  • the focal position Y of the laser is set between a position near the base of the convex body 13 and a position near the upper surface 13d.
  • the focal position Y of the laser may be set at a position below the base of the convex body 13 or may be set at a position above the upper surface 13 d of the convex body 13.
  • the distance from the reference plane described above to the focal position Y of the laser L is referred to as a focal offset m.
  • the focus offset m can be changed variously according to the height c of the convex body 13 or the like.
  • the focus offset m is, for example, about several ⁇ m to several mm, and one representative numerical value is, for example, 0.35 mm.
  • the laser L irradiated from the outer surface side of the resin film 14 effectively comes into contact with the inclined surface 13b of the convex body 13a. Therefore, the laser L is irradiated to the surface of the insulating base material 11 while irradiating the laser L only in the direction perpendicular to the surface of the insulating base material 11 without changing the arrangement position and orientation of the laser irradiation apparatus X and the stage.
  • the circuit pattern 15 is satisfactorily formed not only on the insulating substrate 11 but also on the inclined surface 13b of the convex body 13a (see FIG. 2).
  • the laser L when irradiating the laser L to the inclined surface 13b of the convex-shaped body 13a at (D) circuit pattern formation process, the laser L is irradiated to the surface parallel to the surface of the insulating base material 11. Compared to the case, the energy of the laser L per unit time was increased. Therefore, the laser L is irradiated to the surface of the insulating base material 11 while irradiating the laser L only in the direction perpendicular to the surface of the insulating base material 11 without changing the arrangement position and orientation of the laser irradiation apparatus X and the stage.
  • the circuit pattern 15 is satisfactorily formed not only on the insulating base material 11 but also on the inclined surface 13b of the convex body 13a (see FIG. 2).
  • the laser L hits the surface parallel to the surface of the insulating base material 11 vertically, but the laser L is applied to the inclined surface 13b of the convex body 13a. Hits diagonally instead of hitting vertically.
  • the inclined surface 13b of the convex body 13a the reflection of the laser L increases and the portion with a high energy distribution decreases. Therefore, on the inclined surface 13b of the convex body 13a, the grooves and holes of the formed circuit pattern 15 tend to be small (the width and depth of the grooves and holes are thin or shallow).
  • the grooves and holes of the circuit pattern 15 When the grooves and holes of the circuit pattern 15 are reduced, the amount of the plating catalyst 16 deposited on the circuit pattern 15 is reduced, and it becomes difficult to form an electroless plating film (wiring) 17 that grows with the plating catalyst 16 as a core. As a result, disconnection of the wiring 17 easily occurs on the inclined surface 13b of the convex body 13a.
  • the groove or hole of the circuit pattern 15 when the groove or hole of the circuit pattern 15 is reduced, the capacity of the groove or hole is reduced, so that the grown electroless plating film (wiring) 17 overflows from the groove or hole and is easily overplated. As a result, short circuit and migration are likely to occur.
  • the energy of the laser L per unit time is increased on the inclined surface 13b of the convex body 13a, so that the energy lost by the reflection of the laser L is compensated.
  • the tendency of the grooves and holes of the circuit pattern 15 formed on the inclined surface 13b to be reduced is suppressed, and the problem of disconnection, short circuit, or migration is suppressed.
  • the intermediate structures 10A and 10B of the first and third embodiments include an insulating base material 11 and a convex body 13a formed on the surface of the insulating base material 11 with an insulating resin 13.
  • the convex body 13 a has an inclined surface 13 b that is inclined with respect to the surface of the insulating substrate 11. Therefore, these intermediate structures 10A and 10B can irradiate the laser L only in the direction perpendicular to the surface of the insulating base material 11 without changing the arrangement position and orientation of the laser irradiation apparatus X and the stage.
  • the circuit pattern 15 can be satisfactorily formed not only on the insulating base material 11 but also on the inclined surface 13b of the convex body 13a only by moving L parallel to the surface of the insulating base material 11. Therefore, these intermediate structures 10A and 10B are suitable as intermediate structures for obtaining the three-dimensional structure 10 having wiring provided on the surface.
  • the intermediate structure 10B of the first and third embodiments further includes a resin film 14 that is detachably formed on the surface of the convex body 13a and the surface of the insulating base material 11. Therefore, the circuit pattern 15 is formed over the surface of the convex body 13a and the surface of the insulating base 11 over the resin film 14, and after the plating catalyst 16 is deposited, the resin film 14 is removed, whereby the circuit pattern 15 is removed.
  • the plating catalyst remains only in the portion, and the electroless plating film (wiring) 17 can be formed. Therefore, the intermediate structure 10B is more suitable as an intermediate structure for obtaining the three-dimensional structure 10 having wiring on the surface.
  • the insulating resin layer 13c including the convex body 13a having the surface 13b was formed, and in the (D) circuit pattern forming step, the surface of the insulating substrate 11 was irradiated with the laser L in the vertical direction.
  • the laser L irradiated from the outer surface side of the resin film 14 effectively comes into contact with the inclined surface 13b of the convex body 13a. Therefore, the laser L is irradiated to the surface of the insulating base material 11 while irradiating the laser L only in the direction perpendicular to the surface of the insulating base material 11 without changing the arrangement position and orientation of the laser irradiation apparatus X and the stage.
  • the circuit pattern 15 is satisfactorily formed not only on the portion of the insulating resin layer 13c having a surface parallel to the surface of the insulating base material 11 but also on the inclined surface 13b of the convex body 13a.
  • the laser L when irradiating the laser L to the inclined surface 13b of the convex-shaped body 13a at the (D) circuit pattern formation process, the laser L is irradiated to the surface parallel to the surface of the insulating base material 11. Compared to the case, the energy of the laser L per unit time was increased. Therefore, the laser L is irradiated to the surface of the insulating base material 11 while irradiating the laser L only in the direction perpendicular to the surface of the insulating base material 11 without changing the arrangement position and orientation of the laser irradiation apparatus X and the stage.
  • the circuit pattern 15 is satisfactorily formed not only on the portion of the insulating resin layer 13c having a surface parallel to the surface of the insulating base material 11 but also on the inclined surface 13b of the convex body 13a. The That is, the energy lost by the reflection of the laser L at the inclined surface 13b is compensated, and the tendency of the grooves and holes of the circuit pattern 15 formed on the inclined surface 13b to be reduced is suppressed, and the problem of disconnection, short circuit, or migration is suppressed. Is done.
  • Intermediate structure 10A, 10B of 2nd Embodiment is provided with the insulating base material 11 and the insulating resin layer 13c containing the convex-shaped body 13a formed of the insulating resin 13 on the surface of the insulating base material 11.
  • intermediate structure 10A, 10B of 4th Embodiment is provided with the insulating base material 11 and the insulating resin layer 13c containing the convex-shaped body 13a formed of the insulating resin 13 on the surface of the insulating base material 11.
  • the convex body 13 a has an inclined surface 13 b that is inclined with respect to the surface of the insulating substrate 11. Therefore, these intermediate structures 10A and 10B can irradiate the laser L only in the direction perpendicular to the surface of the insulating base material 11 without changing the arrangement position and orientation of the laser irradiation apparatus X and the stage. Only by moving L parallel to the surface of the insulating base material 11, not only the portion of the insulating resin layer 13 c having a surface parallel to the surface of the insulating base material 11, but also the inclined surface 13 b of the convex body 13 a. In addition, the circuit pattern 15 can be formed satisfactorily. Therefore, these intermediate structures 10A and 10B are suitable as intermediate structures for obtaining the three-dimensional structure 10 having wiring provided on the surface.
  • the intermediate structure 10B of the second and fourth embodiments further includes a resin film 14 formed on the surface of the insulating resin layer 13c so as to be removable. Therefore, the circuit pattern 15 is formed on the surface of the insulating resin layer 13c over the resin film 14, the plating catalyst 16 is applied, and then the resin film 14 is removed so that the plating catalyst is applied only to the circuit pattern 15 portion.
  • the electroless plating film (wiring) 17 can be formed by remaining. Therefore, the intermediate structure 10B is more suitable as an intermediate structure for obtaining the three-dimensional structure 10 having wiring on the surface.
  • the insulating resin layer 13c is formed not only on the electronic member (stack chip) but also on the portion of the insulating base material 11 on which the electronic member is not mounted. Then, the circuit pattern 15 is formed on the surface of the insulating resin layer 13c, and the wiring 17 is formed. Therefore, it is possible to prevent the wiring 17 from coming into contact with the connection terminal 11a of the insulating base material 11, and the degree of freedom of the wiring 17 is increased.
  • the convex body 13a includes an insulating resin 13 formed into a convex shape (FIG. 4D), an electronic member mounted on the insulating base 11 (the electronic member is the surface of the insulating base 11). Formed by covering with an insulating resin 13 (having an inclined surface inclined with respect to FIG. 4) (FIGS. 4A and 4B), an electronic member mounted on the insulating substrate 11 (electronic member) Is formed by coating an insulating resin 13 with a surface that does not have an inclined surface that is inclined with respect to the surface of the insulating substrate 11 (FIGS. 1B, 3B, and 4C). )) At least one of them. Thereby, depending on whether the three-dimensional structure 10 is, for example, a semiconductor package or a circuit board, the structure of the convex body 13a can be selected from these.
  • the inclined surface 13b is formed on the convex body 13a covering the electronic member in the former case. This can be easily done by following the shape (covering performance is improved).
  • the electronic member includes a single semiconductor chip (FIG. 4B) and a plurality of stacked semiconductor chips (FIGS. 1B, 3B, and 4A). , And at least one of circuit-mounted elements (FIG. 4C) such as a chip inductor and a capacitor.
  • the electronic member can be selected from these.
  • the inclination angle ⁇ of the inclined surface 13b of the convex body 13a is 10 ° to 83 ° with respect to the surface of the insulating base material 11 when the angle of the surface of the insulating base material 11 is 0 °. is there.
  • the inclination angle ⁇ of the inclined surface 13b of the convex body 13a is 10 ° to 83 ° with respect to the surface of the insulating base material 11 when the angle of the surface of the insulating base material 11 is 0 °. is there.
  • the laser L is moved in parallel to the surface of the insulating base material 11 while irradiating the laser L only in the direction perpendicular to the surface of the insulating base material 11 without changing the arrangement position and orientation of the apparatus X and the stage. It is possible to form the circuit pattern 15 sufficiently satisfactorily on the inclined surface 13b.
  • the unit of the laser L is increased by increasing the frequency of the laser L, decreasing the moving speed (processing speed) of the laser L, and / or increasing the output of the laser L. Since the energy of the laser L per hour is increased, such an increase in energy can be realized easily and reliably.
  • the energy of the laser L per unit time is further increased as the inclination angle ⁇ of the inclined surface 13b of the convex body 13a is larger. Even if the inclination angle ⁇ is large, the compensation of energy lost by the reflection of L is always performed easily and reliably.
  • the corner Z where the plurality of surfaces of the convex body 13a intersect is chamfered or curved as necessary. That is, it is obtuse.
  • the resin film 14 can be formed on the convex body 13a without any trouble by applying a resin solution or laminating a thin and soft resin film.
  • the corner portion Z of the convex body 13a is an acute angle, there is a possibility that coating unevenness occurs when the resin solution is applied, and it is difficult to satisfactorily form the resin film 14 on the surface of the corner portion Z. There is.
  • the film may be torn and it may be difficult to satisfactorily form the resin film 14 on the surface of the corner portion Z.
  • an unnecessary plating catalyst 16 is deposited on the corner portion Z, and a plating film is formed. May cause a short circuit). Therefore, the corner portion Z of the convex body 13a is obtuse in advance by chamfering or curving, so that the resin solution in the corner portion Z is favorably applied and the resin film is favorably laminated.
  • the three-dimensional structure 10 is a three-dimensional structure having a wiring 17 on the surface, and is obtained by the wiring method shown in FIG. 1 or FIG.
  • the circuit pattern 15 is well formed on the surface 13b, and the wiring 17 is well formed without disconnection (in the third and fourth embodiments, in addition, the problem of short circuit and migration is further suppressed). (See FIG. 2).
  • the circuit pattern 15 is dug into the surface of the three-dimensional structure 10, and part or all of the wiring 17 is embedded in the surface of the three-dimensional structure 10.
  • the adhesive strength of the wiring 17 with respect to the three-dimensional structure 10 is improved, and the dropping and displacement of the wiring 17 are suppressed.
  • the laser focal position Y is set between a position near the base of the convex body 13a and a position near the upper surface 13d. That is, it is set approximately between the lengths of the inclined surfaces 13b of the convex body 13a.
  • the object to be processed is a resin (insulating resin 13) having a high absorptance with respect to laser light in a wavelength region of 100 nm to 400 nm, and the focal depth of the laser L is sufficient. Therefore, even if the focal position Y of the laser L is slightly shifted, laser processing can be performed sufficiently.
  • the focal position Y of the laser is approximately between the length of the inclined surface 13b of the convex body 13a so that the circuit pattern 15 is formed well over the entire length of the inclined surface 13b of the convex body 13a. It is set.
  • the focal position Y of the laser may be set at a position below the base of the convex body 13a, or may be set at a position above the upper surface 13d of the convex body 13a.
  • the insulating base material As the insulating base material 11, various organic base materials and inorganic base materials conventionally used for mounting semiconductor chips can be used without any particular limitation.
  • the organic base material include base materials made of epoxy resin, acrylic resin, polycarbonate resin, polyimide resin, polyphenylene sulfide resin, polyphenylene ether resin, cyanate resin, benzoxazine resin, bismaleimide resin, and the like.
  • the epoxy resin is not particularly limited as long as it is an epoxy resin that constitutes various organic substrates that can be used for manufacturing a circuit board, for example.
  • bisphenol A type epoxy resin bisphenol F type epoxy resin, bisphenol S type epoxy resin, aralkyl epoxy resin, phenol novolac type epoxy resin, alkylphenol novolac type epoxy resin, biphenol type epoxy resin, naphthalene type epoxy resin , Dicyclopentadiene type epoxy resins, epoxidized products of condensates of phenols and aromatic aldehydes having a phenolic hydroxyl group, triglycidyl isocyanurate, alicyclic epoxy resins, and the like.
  • brominated or phosphorus-modified epoxy resins, nitrogen-containing resins, silicone-containing resins and the like are also included to impart flame retardancy. These resins may be used alone or in combination of two or more.
  • a curing agent is generally used to cure the resin.
  • curing agent Specifically, a dicyandiamide, a phenol type hardening
  • phenolic curing agents examples include novolak type, aralkyl type, and terpene type. Furthermore, in order to impart flame retardancy, a phosphorus-modified phenol resin, a phosphorus-modified cyanate resin, and the like are also included. These curing agents may be used alone or in combination of two or more.
  • the material of the insulating base material 11 is a laser beam in a wavelength region of 100 nm to 400 nm. It is preferable to use a resin having excellent absorption rate (UV absorption rate). Specifically, a polyimide resin etc. are mentioned, for example.
  • the insulating base material 11 may contain a filler.
  • the filler may be inorganic fine particles or organic fine particles, and is not particularly limited. By containing the filler, the filler is exposed in the laser-processed portion, and the adhesion between the insulating substrate 11 and the plating film 17 due to the unevenness of the filler can be improved.
  • the material constituting the inorganic fine particles include aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO), boron nitride (BN), aluminum nitride (AlN), silica (SiO 2 ), and titanium.
  • High dielectric constant filler such as barium oxide (BaTiO 3 ) and titanium oxide (TiO 2 ); magnetic filler such as hard ferrite; magnesium hydroxide (Mg (OH) 2 ), aluminum hydroxide (Al (OH) 2 )
  • Inorganic flame retardants such as antimony trioxide (Sb 2 O 3 ), antimony pentoxide (Sb 2 O 5 ), guanidine salt, zinc borate, molybdate compound, zinc stannate; talc (Mg 3 (Si 4 O 10 ) (OH) 2 ), barium sulfate (BaSO 4 ), calcium carbonate (CaCO 3 ), mica and the like.
  • These inorganic fine particles may be used alone or in combination of two or more.
  • these inorganic fine particles have high thermal conductivity, relative dielectric constant, flame retardancy, particle size distribution, color tone freedom, etc., when selectively exerting a desired function, appropriate blending and particle size design should be performed. And high filling can be easily performed.
  • the average particle diameter of the filler is not particularly limited, but is preferably 0.01 ⁇ m to 10 ⁇ m, and more preferably 0.05 ⁇ m to 5 ⁇ m.
  • the inorganic fine particles may be surface-treated with a silane coupling agent in order to improve dispersibility in the insulating base material 11.
  • the insulating base material 11 may contain a silane coupling agent in order to improve the dispersibility of the inorganic fine particles in the insulating base material 11.
  • the silane coupling agent is not particularly limited. Specific examples include silane coupling agents such as epoxy silane, mercapto silane, amino silane, vinyl silane, styryl silane, methacryloxy silane, acryloxy silane, and titanate. These silane coupling agents may be used alone or in combination of two or more.
  • the insulating base material 11 may contain a dispersant in order to improve the dispersibility of the inorganic fine particles in the insulating base material 11.
  • the dispersant is not particularly limited. Specific examples include dispersants such as alkyl ether, sorbitan ester, alkyl polyether amine, and polymer. These dispersants may be used alone or in combination of two or more.
  • the form of the insulating substrate 11 is not particularly limited. Specific examples include a sheet, a film, a prepreg, and a three-dimensional shaped molded body.
  • the thickness of the insulating substrate 11 is not particularly limited. For example, in the case of a sheet, film, prepreg, etc., 10 to 500 ⁇ m is preferable, 10 to 200 ⁇ m is more preferable, 20 to 200 ⁇ m is further preferable, and 20 to 100 ⁇ m is further preferable.
  • the insulating base material 11 may be formed into a three-dimensional shaped molded body by, for example, putting a material to be an insulating base material using a mold and a frame mold, pressurizing and curing, The sheet, film, and prepreg may be punched and the hollowed out material is cured, or may be formed by heating and pressing to form a three-dimensional shaped molded body or the like.
  • an insulating organic material such as a synthetic resin can be preferably used as the insulating resin 13.
  • the insulating resin 13 may be the same material as the material constituting the insulating base 11, or may be formed by polymerization using a vapor deposition method. It may be an insulating material, or may be an insulating material in which an inorganic material is mixed with an organic material or a multilayer. Alternatively, an insulating inorganic material such as ceramics such as silica (SiO 2 ) may be used instead of the insulating resin depending on the situation.
  • the material for forming the resin film 14 is not particularly limited as long as it is a resin material that can be removed by dissolution or swelling in the resin film removal step (F). Specifically, for example, a resist resin used in the field of photoresist, or a resin that has a high degree of swelling with respect to a predetermined liquid and can be peeled off by swelling is used.
  • the resist resin include, for example, a photocurable epoxy resin, an etching resist, a polyester resin, and a rosin resin.
  • the swellable resin is preferably a swellable resin having a degree of swelling with respect to a predetermined liquid of 50% or more, more preferably 100% or more, and even more preferably 500% or more.
  • a resin include, for example, diene elastomers such as styrene-butadiene copolymers and acrylic resins adjusted to have a desired degree of swelling by adjusting the degree of crosslinking or gelation.
  • examples include acrylic elastomers such as acid ester copolymers, and polyester elastomers.
  • the plating catalyst 16 is a catalyst that is applied in advance in order to form the electroless plating film 17 only on a portion where the electroless plating film 17 is to be formed.
  • the plating catalyst 16 can be used without particular limitation as long as it is conventionally used as a catalyst for electroless plating.
  • a plating catalyst precursor may be deposited, and the plating catalyst may be generated after the resin film 14 is removed.
  • Specific examples of the plating catalyst 16 include metal palladium (Pd), platinum (Pt), silver (Ag), and the like.
  • Examples of the method for depositing the plating catalyst 16 include a method of treating with an acidic Pd—Sn colloid solution treated under acidic conditions of pH 1 to 3 and then treating with an acid solution. More specifically, the following methods can be mentioned. First, (D) oil and the like adhering to the surface of the circuit pattern 15 formed in the circuit pattern forming step is washed with hot water using a surfactant solution (cleaner / conditioner) or the like. Next, if necessary, a soft etching treatment is performed with a sodium persulfate-sulfuric acid based soft etching agent.
  • an acidic solution such as a sulfuric acid aqueous solution or a hydrochloric acid aqueous solution having a pH of 1 to 2.
  • a pre-dip solution mainly composed of a stannous chloride aqueous solution having a concentration of about 0.1% to adsorb stannous chloride, a pH of 1 to 1 containing stannous chloride and palladium chloride is obtained.
  • 3 is further immersed in an acidic catalyst metal colloid solution such as acidic Pd—Sn colloid, so that Pd and Sn are aggregated and adsorbed.
  • the acidic catalyst metal colloid solution a known acidic Pd—Sn colloid catalyst solution or the like can be used, and a commercially available plating process using an acidic catalyst metal colloid solution may be used. Such a process is systematized and sold by, for example, Rohm & Haas Electronic Materials.
  • Electroless plating As a method of electroless plating performed in the plating film forming step, a portion to which the plating catalyst 16 is deposited is obtained by immersing a plating object to which the plating catalyst 16 is adhered in a bath of an electroless plating solution. Only the method of depositing the electroless plating film 17 can be used.
  • the metal used for electroless plating examples include copper (Cu), nickel (Ni), cobalt (Co), and aluminum (Al).
  • the plating film which has Cu as a main component is preferable from the point which is excellent in electroconductivity.
  • Ni it is preferable from the point which is excellent in corrosion resistance and adhesiveness with a solder.
  • the film thickness of the plating film 17 is not particularly limited. Specifically, for example, 0.1 to 20 ⁇ m is preferable, and about 1 to 5 ⁇ m is more preferable.
  • the present invention is a method for wiring to the surface of a three-dimensional structure, and includes a convex body forming step of forming a convex body with an insulating resin on the surface of an insulating substrate, and the surface of the convex body. And a resin film forming step for forming a resin film on the surface of the insulating substrate, and a groove and / or a hole having a desired shape and depth having a depth exceeding the thickness of the resin film by laser processing from the outer surface side.
  • the present invention also provides an intermediate structure for obtaining a three-dimensional structure with wiring provided on the surface, comprising an insulating base material and a convex body formed of an insulating resin on the surface of the insulating base material.
  • the convex body has an inclined surface inclined with respect to the surface of the insulating substrate.
  • the intermediate structure may further include a resin film formed so as to be removable on the surface of the convex body and the surface of the insulating base.
  • the present invention also relates to a method of wiring to the surface of a three-dimensional structure, wherein an insulating resin layer forming step of forming an insulating resin layer including a convex body with an insulating resin on the surface of an insulating base material, the surface of the insulating resin layer A resin film forming step for forming a resin film on the outer surface, laser processing from the outer surface side to form grooves and / or holes having a desired shape and depth exceeding the thickness of the resin film to form a circuit pattern Circuit pattern forming process to be formed, plating catalyst deposition process for depositing a plating catalyst or precursor thereof on the surface of the circuit pattern and the resin film, resin film removal process for removing the resin film, and plating catalyst or precursor thereof A plating film forming step of forming an electroless plating film only on a portion where the plating catalyst formed from the body remains, and the insulating resin layer forming step is inclined with respect to the surface of the insulating base material An insulating resin layer including a convex
  • the present invention also provides an intermediate structure for obtaining a three-dimensional structure with wiring provided on the surface thereof, including an insulating base material and an insulating base material including a convex body formed of an insulating resin on the surface of the insulating base material. And the convex body has an inclined surface which is inclined with respect to the surface of the insulating base material.
  • the intermediate structure may further include a resin film formed on the surface of the insulating resin layer so as to be removable.
  • the convex body has an inclined surface inclined with respect to the surface of the insulating base material, which is formed by forming the insulating resin into a convex shape and / or mounted on the insulating base material, or It is preferable that the electronic member not formed is formed by coating with an insulating resin.
  • the electronic member is preferably a single semiconductor chip, a plurality of semiconductor chips stacked in multiple stages, and / or a circuit-mounted element such as a chip inductor or a capacitor.
  • the inclination angle of the inclined surface of the convex body is 10 ° to 83 ° with respect to the surface of the insulating base material when the angle of the surface of the insulating base material is 0 °. preferable.
  • corner portions where a plurality of surfaces of the convex body intersect are chamfered or curved.
  • the other aspect of the present invention is a method for wiring to the surface of a three-dimensional structure, and includes a convex body forming step of forming a convex body with an insulating resin on the surface of an insulating base material, the surface of the convex body, and A resin film forming step for forming a resin film on the surface of the insulating substrate, and forming a groove and / or hole having a desired shape and depth having a depth exceeding the thickness of the resin film by laser processing from the outer surface side.
  • the present invention also relates to a method of wiring to the surface of a three-dimensional structure, wherein an insulating resin layer forming step of forming an insulating resin layer including a convex body with an insulating resin on the surface of an insulating base material, the surface of the insulating resin layer A resin film forming step for forming a resin film on the outer surface, laser processing from the outer surface side to form grooves and / or holes having a desired shape and depth exceeding the thickness of the resin film to form a circuit pattern Circuit pattern forming process to be formed, plating catalyst deposition process for depositing a plating catalyst or precursor thereof on the surface of the circuit pattern and the resin film, resin film removal process for removing the resin film, and plating catalyst or precursor thereof A plating film forming step of forming an electroless plating film only on a portion where the plating catalyst formed from the body remains, and the insulating resin layer forming step is inclined with respect to the surface of the insulating base material
  • the convex body has an inclined surface that is inclined with respect to the surface of the insulating base material that is formed by forming the insulating resin into a convex shape and / or mounted on the insulating base material. It is preferable that the electronic member is formed by coating an unprocessed electronic member with an insulating resin.
  • the electronic member is preferably a single semiconductor chip, a plurality of semiconductor chips stacked in multiple stages, and / or a circuit-mounted element such as a chip inductor or a capacitor.
  • the laser energy per unit time can be increased by increasing the laser frequency.
  • the laser energy per unit time can be increased by slowing the moving speed of the laser.
  • the laser energy per unit time can be increased by increasing the laser output.
  • the wiring method it is preferable to increase the laser energy per unit time as the inclination angle of the inclined surface of the convex body increases.
  • the focal position of the laser is preferably set between a position near the base of the convex body and a position near the upper surface.
  • the present invention is a three-dimensional structure provided with wiring on the surface, which is obtained by the wiring method.
  • the wiring when the wiring is formed on the surface of the three-dimensional structure having the convex shape body by providing the inclined surface on the convex shape body, the arrangement position and direction of the laser irradiation apparatus and the stage are changed.
  • the circuit pattern can be satisfactorily formed on the convex body simply by irradiating the laser in one direction.
  • the surface is parallel to the surface of the insulating base material, compared with the case where the laser is irradiated.
  • Example 1 In FIG. 7, (a) is 1 mm, (b) is 180 ⁇ m, (c) is 60 ⁇ m, and the inclination angle ⁇ of the inclined surface 13b is 45 ° (test number 1), 75 ° (test number 2), 80 ° (test) No. 3), 83 ° (test number 4), and 85 ° (test number 5), respectively, were prepared specimens of the intermediate structure 10A (no resin film was formed). Then, for each specimen, a UV-YAG laser (wavelength 355 nm) was used, and under the laser irradiation conditions shown in Table 1, from the surface of the insulating substrate 11 to the inclined surface 13b of the convex body 13a and further to the upper surface of the convex body 13a.
  • a UV-YAG laser wavelength 355 nm
  • Example 2 Further, in FIG. 7, (a) is 1 mm, (b) is 180 ⁇ m, (c) is 60 ⁇ m, and a large number of specimens of the intermediate structure 10A in which the inclined surface 13b has an inclination angle ⁇ of 45 ° (resin coating) Is not formed). Then, for each specimen, a UV-YAG laser (wavelength 355 nm) was used, and the inclined surface 13b of the convex body 13a from the surface of the insulating substrate 11 and the convex body under the laser irradiation conditions shown in Tables 2 to 4 Ten grooves having a width of 20 ⁇ m and continuous over the upper surface 13d of 13a were formed at equal intervals.
  • a UV-YAG laser wavelength 355 nm
  • the laser was moved in a direction parallel to the surface of the insulating base material 11 while being irradiated in a direction perpendicular to the surface of the insulating base material 11 from above the convex body 13a.
  • channel formed in the inclined surface 13b was observed using the microscope, and the following reference
  • (a) is 1 mm
  • (b) is 180 ⁇ m
  • (c) is 60 ⁇ m
  • a UV-YAG laser was used as in test numbers 6 to 20, and the inclined surface 13b of the convex body 13a and the convex shape were formed from the surface of the insulating base material 11 under the laser irradiation conditions shown in Table 4.
  • Ten grooves having a width of 20 ⁇ m that are continuous over the upper surface 13d of the body 13a were formed at equal intervals.
  • the laser was moved in a direction parallel to the surface of the insulating base material 11 while being irradiated in a direction perpendicular to the surface of the insulating base material 11 from above the convex body 13a.
  • channel formed in the inclined surface 13b was observed using the microscope, and the said reference
  • the present invention has wide industrial applicability in the technical field relating to the formation of electric circuits in the electric and electronic fields.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laser Beam Processing (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

La présente invention réussit à former simplement un motif de circuits sur une structure tridimensionnelle par application d'un laser dans une direction sans modifier la position de l'agencement ou la direction du dispositif d'éclairement laser ou d'une platine. Un corps convexe (13a) est formé sur une surface d'un matériau de base isolant (11) à l'aide d'une résine isolante (13), un revêtement de résine (14) est formé sur une surface du corps convexe (13a) et sur la surface du matériau de base isolant (11), un motif de circuits (15) ayant une profondeur supérieure à l'épaisseur du revêtement de résine (14) est formé par un traitement laser à partir d'une surface extérieure, un catalyseur au platine (16) est déposé sur une surface du motif de circuits (15) et une surface du revêtement de résine (14), le revêtement de résine (14) est éliminé et un film de placage chimique (17) est formé uniquement dans la région où subsiste le catalyseur au platine (16). Dans une étape (B) de formation du corps convexe, le corps convexe (13a) ayant une surface inclinée (13b) en direction de la surface du matériau de base isolant (11) est formé. Dans une étape (D) de formation du motif de circuits, un laser est appliqué dans la direction perpendiculaire à la surface du matériau de base isolant (11).
PCT/JP2011/006111 2010-11-05 2011-11-01 Procédé de formation de conducteurs à la surface d'une structure tridimensionnelle, structure intermédiaire pour obtenir une structure tridimensionnelle portant des conducteurs à sa surface, ainsi que structure tridimensionnelle portant des conducteurs à sa surface WO2012060091A1 (fr)

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JP2010248936 2010-11-05
JP2010-248936 2010-11-05
JP2010248925 2010-11-05

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
JP2013070034A (ja) * 2011-09-22 2013-04-18 Samsung Electronics Co Ltd マルチチップ半導体パッケージ及びその形成方法
EP3355667A1 (fr) * 2017-01-30 2018-08-01 Siemens Aktiengesellschaft Procédé de fabrication d'un circuit électrique et circuit électrique
WO2019038879A1 (fr) * 2017-08-24 2019-02-28 株式会社Ｆｕｊｉ Procédé et dispositif de formation de fil

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JPH08148803A (ja) * 1994-11-18 1996-06-07 Matsushita Electric Works Ltd 立体回路の形成方法
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JP2008118075A (ja) * 2006-11-08 2008-05-22 Seiko Epson Corp 電子部品の実装方法、電子基板、及び電子機器
WO2010087336A1 (fr) * 2009-01-27 2010-08-05 パナソニック電工株式会社 Procédé de montage de puces semi-conductrices, dispositif à semi-conducteurs obtenus par ce procédé, procédé de connexion de puces semi-conductrices, et structure tridimensionnelle, à la surface de laquelle est prévu un câblage et son procédé de fabrication

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Publication number Priority date Publication date Assignee Title
JPH08148803A (ja) * 1994-11-18 1996-06-07 Matsushita Electric Works Ltd 立体回路の形成方法
JP2002290007A (ja) * 2001-03-27 2002-10-04 Matsushita Electric Works Ltd 回路基板の製造方法及び製造装置
JP2003086762A (ja) * 2001-07-04 2003-03-20 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004327552A (ja) * 2003-04-22 2004-11-18 Matsushita Electric Works Ltd 立体回路パターンの形成方法、装置、及びこれらを用いて製造される立体回路板
JP2008118075A (ja) * 2006-11-08 2008-05-22 Seiko Epson Corp 電子部品の実装方法、電子基板、及び電子機器
WO2010087336A1 (fr) * 2009-01-27 2010-08-05 パナソニック電工株式会社 Procédé de montage de puces semi-conductrices, dispositif à semi-conducteurs obtenus par ce procédé, procédé de connexion de puces semi-conductrices, et structure tridimensionnelle, à la surface de laquelle est prévu un câblage et son procédé de fabrication

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013070034A (ja) * 2011-09-22 2013-04-18 Samsung Electronics Co Ltd マルチチップ半導体パッケージ及びその形成方法
EP3355667A1 (fr) * 2017-01-30 2018-08-01 Siemens Aktiengesellschaft Procédé de fabrication d'un circuit électrique et circuit électrique
WO2018138031A3 (fr) * 2017-01-30 2018-09-27 Siemens Aktiengesellschaft Procédé de fabrication d'un circuit électrique
CN110235533A (zh) * 2017-01-30 2019-09-13 西门子股份公司 制造电路的方法
US11056460B2 (en) 2017-01-30 2021-07-06 Siemens Aktiengesellschaft Method for producing an electric circuit comprising a circuit carrier, contact areas, and an insulating body
CN110235533B (zh) * 2017-01-30 2022-04-08 西门子股份公司 制造电路的方法
WO2019038879A1 (fr) * 2017-08-24 2019-02-28 株式会社Ｆｕｊｉ Procédé et dispositif de formation de fil

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