WO2012059848A3 - Dispositif électroluminescent à base de nitrure iii - Google Patents

Dispositif électroluminescent à base de nitrure iii Download PDF

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Publication number
WO2012059848A3
WO2012059848A3 PCT/IB2011/054791 IB2011054791W WO2012059848A3 WO 2012059848 A3 WO2012059848 A3 WO 2012059848A3 IB 2011054791 W IB2011054791 W IB 2011054791W WO 2012059848 A3 WO2012059848 A3 WO 2012059848A3
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WIPO (PCT)
Prior art keywords
substrate
iii
light emitting
emitting device
layer
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Application number
PCT/IB2011/054791
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English (en)
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WO2012059848A2 (fr
Inventor
Michael Jason Grundmann
Nathan Fredrick Gardner
Werner Karl Goetz
Melvin Barker Mclaurin
John Edward Epler
Francisco Alexander Leon
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Priority to CN2011800529058A priority Critical patent/CN103180973A/zh
Priority to EP11781870.8A priority patent/EP2636076A2/fr
Priority to KR20137014094A priority patent/KR20130111577A/ko
Priority to US13/882,744 priority patent/US10304997B2/en
Priority to JP2013537233A priority patent/JP2013544436A/ja
Publication of WO2012059848A2 publication Critical patent/WO2012059848A2/fr
Publication of WO2012059848A3 publication Critical patent/WO2012059848A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0211—Substrates made of ternary or quaternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un dispositif comprenant un substrat et une structure de nitrure III mise en croissance sur le substrat, cette structure comprenant une couche électroluminescente disposée entre une région de type n et une région de type p. Ce substrat est un RAO3(MO)n, dans lequel R est un cation trivalent, Sc, In, Y ou un lanthanide; A est un cation trivalent, Fe (III), Ga ou Al; M est un cation divalent, Mg, Mn, Fe (II), Co, Cu, Zn ou Cd; et n est un entier ≥ 1. Le substrat présente une constante de réseau dans le plan a. Au moins une couche de nitrure III de la structure de nitrure III comprend une couche à constante de réseau global a. [(|substrat a - couche a|)/substrat a]*100% n'est pas supérieur à 1%.
PCT/IB2011/054791 2010-11-02 2011-10-27 Dispositif électroluminescent à base de nitrure iii WO2012059848A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2011800529058A CN103180973A (zh) 2010-11-02 2011-10-27 Iii族氮化物发光器件
EP11781870.8A EP2636076A2 (fr) 2010-11-02 2011-10-27 Dispositif électroluminescent à base de nitrure iii
KR20137014094A KR20130111577A (ko) 2010-11-02 2011-10-27 Ⅲ족 질화물 발광 소자
US13/882,744 US10304997B2 (en) 2010-11-02 2011-10-27 III-nitride light emitting device with a region including only ternary, quaternary, and/or quinary III-nitride layers
JP2013537233A JP2013544436A (ja) 2010-11-02 2011-10-27 Ｉｉｉ族窒化物発光デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40915810P 2010-11-02 2010-11-02
US61/409,158 2010-11-02

Publications (2)

Publication Number Publication Date
WO2012059848A2 WO2012059848A2 (fr) 2012-05-10
WO2012059848A3 true WO2012059848A3 (fr) 2012-06-28

Family

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PCT/IB2011/054791 WO2012059848A2 (fr) 2010-11-02 2011-10-27 Dispositif électroluminescent à base de nitrure iii

Country Status (7)

Country Link
US (1) US10304997B2 (fr)
EP (1) EP2636076A2 (fr)
JP (1) JP2013544436A (fr)
KR (1) KR20130111577A (fr)
CN (1) CN103180973A (fr)
TW (1) TW201230385A (fr)
WO (1) WO2012059848A2 (fr)

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JP2015119067A (ja) * 2013-12-19 2015-06-25 ソニー株式会社 固体撮像装置、光検出器、および電子機器
JP6319598B2 (ja) * 2016-02-23 2018-05-09 パナソニックＩｐマネジメント株式会社 Ｒａｍｏ４基板およびその製造方法
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JP6249250B2 (ja) * 2016-03-23 2017-12-20 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
CN107230737B (zh) * 2016-03-25 2019-03-08 松下知识产权经营株式会社 Iii族氮化物基板以及iii族氮化物结晶的制造方法
JP6242941B2 (ja) * 2016-05-20 2017-12-06 パナソニック株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
CN109155345B (zh) * 2016-06-30 2022-10-28 苹果公司 用于减少的非辐射侧壁复合的led结构
US10522973B2 (en) * 2017-04-12 2019-12-31 Sense Photonics, Inc. Beam shaping for ultra-small vertical cavity surface emitting laser (VCSEL) arrays
CN110050330B (zh) * 2017-11-16 2024-03-29 松下控股株式会社 Iii族氮化物半导体
US10890712B2 (en) * 2018-05-11 2021-01-12 Raytheon Bbn Technologies Corp. Photonic and electric devices on a common layer
JP7075840B2 (ja) 2018-07-09 2022-05-26 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物半導体発光ダイオード、およびその製造方法
JP7109079B2 (ja) * 2018-12-06 2022-07-29 学校法人 名城大学 窒化物半導体多層膜反射鏡
JP7129633B2 (ja) * 2019-01-10 2022-09-02 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物結晶の製造方法
CN109830580B (zh) * 2019-01-29 2021-10-08 华灿光电（浙江）有限公司 氮化镓基发光二极管外延片及其制造方法
CN109659812B (zh) * 2019-01-30 2024-07-05 厦门乾照半导体科技有限公司 一种具有odr的倒装vcsel芯片及其制作方法
CN110265875A (zh) * 2019-05-29 2019-09-20 威科赛乐微电子股份有限公司 可发白光的GaN型VCSEL芯片及其制备方法
JP7228792B2 (ja) * 2019-06-07 2023-02-27 パナソニックＩｐマネジメント株式会社 波長変換装置
JP7228793B2 (ja) * 2019-06-07 2023-02-27 パナソニックＩｐマネジメント株式会社 波長変換デバイス
CN110265872A (zh) * 2019-06-18 2019-09-20 威科赛乐微电子股份有限公司 一种底部发射型vcsel芯片及其制造方法
CN111009707A (zh) * 2019-12-12 2020-04-14 南京邮电大学 一种基于二维光子晶体高q值射频带阻滤波器
CN116364820B (zh) * 2023-05-31 2023-09-05 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、led

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TW201230385A (en) 2012-07-16
US10304997B2 (en) 2019-05-28
JP2013544436A (ja) 2013-12-12
CN103180973A (zh) 2013-06-26
US20150115299A1 (en) 2015-04-30
EP2636076A2 (fr) 2013-09-11
WO2012059848A2 (fr) 2012-05-10
KR20130111577A (ko) 2013-10-10

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