WO2012053589A1 - 接着剤組成物、半導体装置の製造方法及び半導体装置 - Google Patents

接着剤組成物、半導体装置の製造方法及び半導体装置 Download PDF

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Publication number
WO2012053589A1
WO2012053589A1 PCT/JP2011/074153 JP2011074153W WO2012053589A1 WO 2012053589 A1 WO2012053589 A1 WO 2012053589A1 JP 2011074153 W JP2011074153 W JP 2011074153W WO 2012053589 A1 WO2012053589 A1 WO 2012053589A1
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WO
WIPO (PCT)
Prior art keywords
adhesive composition
semiconductor device
semiconductor
connection
group
Prior art date
Application number
PCT/JP2011/074153
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English (en)
French (fr)
Japanese (ja)
Inventor
一尊 本田
永井　朗
榎本　哲也
Original Assignee
日立化成工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成工業株式会社 filed Critical 日立化成工業株式会社
Priority to CN201180050254.9A priority Critical patent/CN103189464B/zh
Priority to KR1020137012268A priority patent/KR101464454B1/ko
Priority to JP2012512164A priority patent/JP5003855B2/ja
Publication of WO2012053589A1 publication Critical patent/WO2012053589A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/04—Ingredients treated with organic substances
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/04—Ingredients treated with organic substances
    • C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Definitions

  • connection methods are stacked and multi-staged, such as a chip stack package, POP (Package On Package), TSV (Through-Silicon Via), etc.
  • POP Package On Package
  • TSV Through-Silicon Via
  • Such stacking / multi-stage technology arranges semiconductor chips and the like three-dimensionally, so that the package can be made smaller than the two-dimensional arrangement technique.
  • the TSV technology is effective for improving semiconductor performance, reducing noise, reducing the mounting area, and saving power, and is attracting attention as a next-generation semiconductor wiring technology.
  • the gap between the semiconductor chip and the substrate is becoming narrower with the recent progress of miniaturization of semiconductor devices, and the Capillary-Flow method requires a long time for implantation and decreases productivity.
  • the pre-applied method has become the mainstream as a method for manufacturing a package capable of high functionality, high integration, and high speed.
  • Q 1 , Q 2 and Q 3 each independently represents an alkylene group having 1 to 10 carbon atoms, and b represents an integer of 1 to 80.
  • Q 4 , Q 5 , Q 6 and Q 7 each independently represent an alkylene group having 1 to 10 carbon atoms, and c, d and e each independently represents an integer of 1 to 50.
  • the content of the aliphatic ether diamine represented by the general formula (III) or (IV) is preferably 1 to 50 mol% of the total diamine, and the aliphatic diamine represented by the general formula (V)
  • the content of is preferably 20 to 80 mol% of the total diamine, and the content of the siloxane diamine represented by the general formula (VI) is preferably 20 to 80 mol% of the total diamine.
  • the content is within the above range, the effect of imparting low temperature laminating properties and low water absorption tends to increase.
  • Examples of the aliphatic diamine represented by the general formula (V) include 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6- Diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane and 1,2-diaminocyclohexane Is mentioned. Among these, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane and 1,12-diaminododecane are preferable.
  • the substrate 20 is not particularly limited as long as it is a circuit board, and an unnecessary portion of a metal film is etched on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, or the like.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Adhesive Tapes (AREA)
PCT/JP2011/074153 2010-10-22 2011-10-20 接着剤組成物、半導体装置の製造方法及び半導体装置 WO2012053589A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180050254.9A CN103189464B (zh) 2010-10-22 2011-10-20 粘接剂组合物、半导体装置的制造方法以及半导体装置
KR1020137012268A KR101464454B1 (ko) 2010-10-22 2011-10-20 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치
JP2012512164A JP5003855B2 (ja) 2010-10-22 2011-10-20 接着剤組成物、半導体装置の製造方法及び半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-237542 2010-10-22
JP2010237542 2010-10-22

Publications (1)

Publication Number Publication Date
WO2012053589A1 true WO2012053589A1 (ja) 2012-04-26

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PCT/JP2011/074153 WO2012053589A1 (ja) 2010-10-22 2011-10-20 接着剤組成物、半導体装置の製造方法及び半導体装置

Country Status (5)

Country Link
JP (2) JP5003855B2 (zh)
KR (1) KR101464454B1 (zh)
CN (1) CN103189464B (zh)
TW (1) TWI457413B (zh)
WO (1) WO2012053589A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014046128A1 (ja) * 2012-09-24 2014-03-27 積水化学工業株式会社 電子部品用接着剤及び半導体チップ実装体の製造方法
WO2022059640A1 (ja) * 2020-09-16 2022-03-24 昭和電工マテリアルズ株式会社 半導体用接着剤、並びに、半導体装置及びその製造方法
WO2022059639A1 (ja) * 2020-09-16 2022-03-24 昭和電工マテリアルズ株式会社 半導体用接着剤、並びに、半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017038081A (ja) * 2016-10-27 2017-02-16 住友ベークライト株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11345517A (ja) * 1998-06-02 1999-12-14 Toshiba Chem Corp 異方性導電接着剤
JP2002060716A (ja) * 2000-08-24 2002-02-26 Hitachi Chem Co Ltd 低弾性接着剤、低弾性接着部材、低弾性接着部材を備えた半導体搭載用基板及びこれを用いた半導体装置
JP2006196850A (ja) * 2004-12-16 2006-07-27 Sumitomo Electric Ind Ltd 回路接続用接着剤
JP2009239138A (ja) * 2008-03-28 2009-10-15 Sumitomo Bakelite Co Ltd 半導体用フィルム、半導体装置の製造方法および半導体装置
JP2009256612A (ja) * 2008-03-26 2009-11-05 Hitachi Chem Co Ltd 半導体封止用接着剤、半導体封止用フィルム状接着剤、半導体装置及びその製造方法
JP2009262227A (ja) * 2008-04-02 2009-11-12 Hitachi Chem Co Ltd フラックス活性剤、接着剤樹脂組成物、接着ペースト、接着フィルム、半導体装置の製造方法、及び半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
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EP0349855A3 (en) * 1988-06-27 1991-01-23 Hercules Incorporated Molded article of metathesis polymerized polymer containing fillers and process for its preparation
TWI314153B (en) * 2002-07-12 2009-09-01 Mitsui Chemicals Inc Process for production of oxyalkylene derivative
JP4267428B2 (ja) * 2003-11-14 2009-05-27 日東電工株式会社 半導体封止用熱硬化性樹脂組成物の製造方法
KR20080091086A (ko) * 2006-09-13 2008-10-09 스미토모 베이클라이트 가부시키가이샤 반도체 장치
TWI432546B (zh) * 2008-02-07 2014-04-01 Sumitomo Bakelite Co A semiconductor thin film, a semiconductor device manufacturing method, and a semiconductor device
JP5195454B2 (ja) * 2009-01-22 2013-05-08 味の素株式会社 樹脂組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11345517A (ja) * 1998-06-02 1999-12-14 Toshiba Chem Corp 異方性導電接着剤
JP2002060716A (ja) * 2000-08-24 2002-02-26 Hitachi Chem Co Ltd 低弾性接着剤、低弾性接着部材、低弾性接着部材を備えた半導体搭載用基板及びこれを用いた半導体装置
JP2006196850A (ja) * 2004-12-16 2006-07-27 Sumitomo Electric Ind Ltd 回路接続用接着剤
JP2009256612A (ja) * 2008-03-26 2009-11-05 Hitachi Chem Co Ltd 半導体封止用接着剤、半導体封止用フィルム状接着剤、半導体装置及びその製造方法
JP2009239138A (ja) * 2008-03-28 2009-10-15 Sumitomo Bakelite Co Ltd 半導体用フィルム、半導体装置の製造方法および半導体装置
JP2009262227A (ja) * 2008-04-02 2009-11-12 Hitachi Chem Co Ltd フラックス活性剤、接着剤樹脂組成物、接着ペースト、接着フィルム、半導体装置の製造方法、及び半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014046128A1 (ja) * 2012-09-24 2014-03-27 積水化学工業株式会社 電子部品用接着剤及び半導体チップ実装体の製造方法
JP2014077122A (ja) * 2012-09-24 2014-05-01 Sekisui Chem Co Ltd 電子部品用接着剤及び半導体チップ実装体の製造方法
WO2022059640A1 (ja) * 2020-09-16 2022-03-24 昭和電工マテリアルズ株式会社 半導体用接着剤、並びに、半導体装置及びその製造方法
WO2022059639A1 (ja) * 2020-09-16 2022-03-24 昭和電工マテリアルズ株式会社 半導体用接着剤、並びに、半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPWO2012053589A1 (ja) 2014-02-24
KR101464454B1 (ko) 2014-11-21
TWI457413B (zh) 2014-10-21
KR20130129199A (ko) 2013-11-27
JP2012182461A (ja) 2012-09-20
TW201231590A (en) 2012-08-01
JP5003855B2 (ja) 2012-08-15
CN103189464B (zh) 2015-11-25
CN103189464A (zh) 2013-07-03

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