WO2012053331A1 - Elément semi-conducteur au nitrure du groupe iii, couche semi-conductrice au nitrure du groupe émettant dans des longueurs d'ondes multiples et procédé de formation d'une couche semi-conductrice au nitrure du groupe iii émettant dans des longueurs d'ondes multiples - Google Patents

Elément semi-conducteur au nitrure du groupe iii, couche semi-conductrice au nitrure du groupe émettant dans des longueurs d'ondes multiples et procédé de formation d'une couche semi-conductrice au nitrure du groupe iii émettant dans des longueurs d'ondes multiples Download PDF

Info

Publication number
WO2012053331A1
WO2012053331A1 PCT/JP2011/072192 JP2011072192W WO2012053331A1 WO 2012053331 A1 WO2012053331 A1 WO 2012053331A1 JP 2011072192 W JP2011072192 W JP 2011072192W WO 2012053331 A1 WO2012053331 A1 WO 2012053331A1
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
group iii
iii nitride
wavelength
light emitting
Prior art date
Application number
PCT/JP2011/072192
Other languages
English (en)
Japanese (ja)
Inventor
宇田川　隆
友 菊池
Original Assignee
昭和電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 昭和電工株式会社 filed Critical 昭和電工株式会社
Publication of WO2012053331A1 publication Critical patent/WO2012053331A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Definitions

  • the present invention relates to a group III nitride semiconductor device, a multiwavelength light emitting group III nitride semiconductor layer, and a method for forming a multiwavelength light emitting group III nitride semiconductor layer, and more particularly, a group III nitride semiconductor device and a group III nitride.
  • the present invention relates to a method for forming a light-emitting group III nitride semiconductor layer.
  • a group III nitride semiconductor layer such as gallium nitride indium (composition formula Ga X In 1-X N: 0 ⁇ X ⁇ 1) has been used to form a light emitting layer or the like that emits visible light.
  • composition formula Ga X In 1-X N: 0 ⁇ X ⁇ 1 has been used to form a light emitting layer or the like that emits visible light.
  • Patent Document 1 From gallium phosphide / indium, light emission from red to blue, which cannot be obtained with compound semiconductor materials such as gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), and aluminum phosphide / indium (AlInP), can be obtained.
  • GaP gallium phosphide
  • GaAsP gallium arsenide phosphide
  • AlInP aluminum phosphide / indium
  • impurities such as zinc are reported to generate light absorption of energy different from the photon energy corresponding to the band gap (see Patent Document 1).
  • impurities that cause such light absorption include cadmium (element symbol: Cd), magnesium (element symbol: Mg), beryllium (element symbol: Be), germanium (element symbol: Ge), copper ( Element symbol: Cu) is known (see Patent Document 1).
  • a technique for forming a light emitting layer from an aluminum nitride / gallium / indium (AlGaInN) layer doped with a plurality of impurities is also known.
  • AlGaInN aluminum nitride / gallium / indium
  • there is a technique for constructing an LED using a gallium nitride / indium layer formed by adding both n-type and p-type impurities (dopants) as a light-emitting layer see Patent Documents 2 to 4.
  • n-type impurities include silicon (element symbol: Si), germanium (element symbol: Ge), tellurium (element symbol: Te), and selenium (element symbol: Se) (paragraph (0008) of Patent Document 3). )reference).
  • Patent Document 4 describes sulfur (element symbol: S) as an n-type impurity (see paragraph (0022) of Patent Document 4).
  • Examples of p-type impurities include zinc, magnesium, cadmium, beryllium, and calcium (element symbol: Ca) (see paragraph (0008) of Patent Document 3).
  • Patent Document 4 describes mercury (element symbol: Hg) as a p-type impurity (see paragraph (0022) of Patent Document 4).
  • a monochromatic light emitting diode that emits blue light using an n-type and p-type impurity added, specifically, a gallium nitride / indium layer added with silicon and zinc as a light emitting layer (English abbreviation: LED)
  • LED gallium nitride / indium layer added with silicon and zinc as a light emitting layer
  • Patent Documents 2 to 4 An example of a technique for constructing is known (see Patent Documents 2 to 4).
  • Light emitted from a conventional LED having an aluminum nitride / gallium / indium layer doped with both n-type and p-type impurities as a light-emitting layer has an emission peak (peak) wavelength of 490 nanometers (unit: nm). Blue monochromatic light (see Patent Documents 2 to 4).
  • a technique for constructing an LED that emits white light using an LED that emits blue light is also known.
  • this is a technique for constructing an LED that excites a phosphor with blue light emitted from a light emitting layer made of a gallium nitride / indium layer and emits white excitation light (see Patent Documents 5 to 8).
  • yttrium aluminum garnet Y 3 Al 5 O 12
  • which is excited by blue light or ultraviolet light and emits white fluorescence is used as the phosphor for constituting the fluorescent white LED (See Patent Documents 9 to 11).
  • the first problem associated with the above-described fluorescent white LED using gallium indium nitride as the light-emitting layer is that a phosphor that is excited by blue light or the like and emits fluorescence having different wavelengths is required. The production process is redundant and complicated.
  • the second problem is that, in order to stably obtain white light with a constant color tone by exciting the phosphor, according to the difference in wavelength of light emitted from the light emitting layer made of a gallium nitride / indium layer or the like, It is necessary to delicately and precisely change the composition of Y 3 Al 5 O 12 and the like to which rare-earth elements used as phosphors are added, and it is troublesome to obtain a white LED having a constant color rendering property. It is to become.
  • the technical problems with a white LED with a conventional structure using a gallium nitride / indium layer as the light emitting layer are, for example, blue light emitted from the gallium nitride / indium light emitting layer, and the blue light that is excited by the blue light and complementary to the blue light.
  • White LED (“Wide Gap Semiconductor Optical / Electronic Device” (March 31, 2006, published by Morikita Publishing Co., Ltd., 1st edition, 1st print)) (See page 174).
  • a YAG phosphor to which cerium (element symbol: Ce) is added is used (see “Wide Gap Semiconductor Optical / Electronic Device”, pages 184 to 185).
  • Ce cerium
  • yttrium (element symbol: Y) aluminum (element symbol: Al)
  • gadolinium in accordance with the difference in wavelength of the blue light used as the excitation light each time.
  • Gd composition of element symbol
  • Ga gallium
  • the complementary color type white LED it is mainly light emission of two colors having a complementary color relationship that is mixed to obtain white light. For this reason, depending on the ratio of the intensity of light emission of two colors having a complementary color relationship, there is a problem that the color tone of the resulting white light slightly changes. Therefore, in the complementary color type white LED, in any case, it is technically difficult to stably obtain a white LED that provides a constant color rendering by mixing light.
  • a phosphor that generates main fluorescence on a longer wavelength side than excitation light such as blue light is used (“Wide Gap Semiconductor Optical / Electronic Device”, 176 ⁇ ). Page 179). That is, a white LED is formed by mixing excitation light and fluorescence having a longer wavelength.
  • a single gallium nitride / indium single layer that is numerically single can generate a plurality of light emission with different wavelengths, and can be attached to a white LED of a type different from the fluorescent type or the complementary type.
  • the conventional problem can be solved. For example, if a gallium nitride / indium layer capable of emitting red (R), green (G), and blue (B) light is used as a light emitting layer, it is convenient to construct an RGB mixed white LED. That is, when a single gallium nitride / indium single layer is used, it is not necessary to provide light emitting layers capable of emitting red (R), green (G), or blue (B), respectively.
  • a group III nitride semiconductor single layer containing gallium that produces a plurality of light emission having different wavelengths while being a single layer (single layer) is configured, for example, a gallium indium single layer
  • the requirements for doing so are not clear.
  • the present invention has been made to avoid the above-mentioned problems of the prior art relating to a group III nitride semiconductor white LED which is one industrial application field of the present invention.
  • the present invention clarifies the structural requirements to be included in a group III nitride semiconductor monolayer containing gallium in order to provide a plurality of light emission having different wavelengths, and (i) a numerically single layer, that is, A group III nitride semiconductor layer containing gallium as an essential constituent element capable of emitting a plurality of light emissions having different emission wavelengths even though it is a single layer, (ii) one or more group III nitride semiconductor single layers A semiconductor device comprising two or more, (iii) a method for forming the group III nitride semiconductor single layer is presented. Accordingly, an object of the present invention is to easily provide a semiconductor element such as a white LED belonging to one industrial application field of the present invention with a simple structure.
  • the present invention eliminates the conventional problems associated with white LEDs by employing a multi-wavelength emitting group III-nitride semiconductor single layer that generates a plurality of light emissions having different wavelengths while being a single layer. It is a solution.
  • the inventions related to [1] to [35] are provided below.
  • the group III nitride semiconductor layer comprises a group III element containing gallium in a stoichiometrically richer form than a group V element containing nitrogen, and separately from the band edge emission,
  • a group III nitride semiconductor device comprising a multi-wavelength light emitting group III nitride semiconductor single layer that simultaneously emits at least three lights having different wavelengths in a wavelength region longer than band edge emission.
  • the group III nitride semiconductor device according to item 1 above, wherein the group III nitride semiconductor layer includes a plurality of the multi-wavelength light emitting group III nitride semiconductor single layers.
  • the multi-wavelength light emitting group III nitride semiconductor single layer of the group III nitride semiconductor layer emits at least three lights having different wavelengths simultaneously in a band of wavelengths of 400 nm or more and 750 nm or less. 3.
  • the group III nitride semiconductor device according to item 1 or 2.
  • the multi-wavelength light emitting group III nitride semiconductor single layer of the group III nitride semiconductor layer simultaneously emits at least three lights having different wavelengths in a wavelength band of 500 nm or more and 750 nm or less. 3.
  • the multi-wavelength emission group III nitride semiconductor single layer of the group III nitride semiconductor layer includes silicon in an atomic concentration range of 6 ⁇ 10 17 cm ⁇ 3 to 5 ⁇ 10 19 cm ⁇ 3 . 6.
  • the multi-wavelength light emitting group III nitride semiconductor single layer of the group III nitride semiconductor layer is characterized in that the atomic concentration of magnesium is lower than the atomic concentration of silicon and higher than the atomic concentration of hydrogen.
  • the multiwavelength emission group III nitride semiconductor single layer of the group III nitride semiconductor layer contains hydrogen in an atomic concentration range of 2 ⁇ 10 18 cm ⁇ 3 or less.
  • Group III nitride semiconductor device [9] In the group III nitride semiconductor layer of the group III nitride semiconductor layer, the atomic concentration of magnesium is lower than the atomic concentration of silicon and higher than the atomic concentration of carbon (element symbol: C). 8. The group III nitride semiconductor device according to item 7 above. [10] The item 9 above, wherein the multi-wavelength emission group III nitride semiconductor single layer of the group III nitride semiconductor layer contains carbon in an atomic concentration range of 2 ⁇ 10 18 cm ⁇ 3 or less.
  • Group III nitride semiconductor device [11] In the group III nitride semiconductor layer of the group III nitride semiconductor layer, the atomic concentration of magnesium is lower than the atomic concentration of silicon and higher than the atomic concentration of oxygen (element symbol: O). 8. The group III nitride semiconductor device according to item 7 above. [12] The multi-wavelength light emitting group III nitride semiconductor single layer of the group III nitride semiconductor layer contains oxygen in an atomic concentration range of 1 ⁇ 10 18 cm ⁇ 3 or less. Group III nitride semiconductor device.
  • the multi-wavelength emission group III nitride semiconductor single layer of the group III nitride semiconductor layer has an atomic concentration of magnesium lower than an atomic concentration of silicon and higher than an atomic concentration of boron (element symbol: B). 8. The group III nitride semiconductor device according to item 7 above.
  • a multi-wavelength light emitting group III nitride semiconductor layer having at least three maximum values having different wavelengths in a wavelength region longer than light emission.
  • the multiwavelength emission group III nitride according to item 14 wherein the emission spectrum by the radiative recombination has at least three maximum values having different wavelengths in a wavelength band of 400 nm to 750 nm.
  • Semiconductor layer [16] The multi-wavelength light emitting group III nitride according to item 15 above, wherein the emission spectrum due to radiative recombination has at least three local maximum values with different wavelengths in a band of 500 nm to 750 nm. Semiconductor layer.
  • H atomic concentration of hydrogen
  • a method for forming a featured multi-wavelength light emitting group III nitride semiconductor layer is set to 400 ° C. or more and 620 ° C. or less, and silicon as the donor impurity and magnesium as the acceptor impurity are set to a flux ratio of the magnesium to the silicon of 0. .1 or less at the same time in the nitrogen plasma atmosphere and containing the silicon as the donor impurity in an atomic concentration range of 6 ⁇ 10 17 cm ⁇ 3 to 5 ⁇ 10 19 cm ⁇ 3 and the acceptor impurity 27.
  • the nitrogen plasma atmosphere is generated under the condition that the supply amount of nitrogen gas (molecular formula: N 2 ) is 0.1 cc / min or more and 4.8 cc / min or less, and the multi-wavelength emission group III nitride semiconductor layer is formed.
  • N 2 molecular formula
  • the intensity of the emission peak due to the second positive band of nitrogen molecules in the wavelength region of 250 nm or more and 370 nm or less is 1/10 or less of the intensity of the emission peak of atomic nitrogen at the wavelength of 745 nm.
  • Layer formation method is the intensity of the emission peak due to the second positive band of nitrogen molecules in the wavelength region of 250 nm or more and 370 nm or less.
  • the configuration used as the light emitting layer can provide a white LED with a simple structure and high color rendering properties.
  • a white LED having a simple structure that does not use a phosphor can be obtained.
  • a white LED can be obtained without the need to provide a light emitting layer for each of RGB colors.
  • a plurality of multi-wavelength light emitting group III nitride semiconductor single layers that emit light having different wavelengths apart from the band edge light emission although being numerically single are used.
  • a white LED having excellent light emission intensity can be provided.
  • a multi-wavelength light emitting group III nitride semiconductor layer capable of simultaneously emitting multi-wavelength light having different wavelengths in the wavelength range of 400 nm to 750 nm is used as the light emitting layer.
  • white LED which is excellent in color rendering property by mixed light can be provided simply.
  • a multi-wavelength light emitting group III capable of simultaneously emitting multi-wavelength light having different wavelengths within a wavelength range of 500 nm or more and 750 nm or less of a light emitting layer.
  • the nitride semiconductor single layer it is possible to simply provide a white LED that is excellent in color rendering due to mixed light.
  • the multi-wavelength light emission from each layer of the multi-wavelength light emitting group III nitride semiconductor single layer is superimposed.
  • a white LED with high emission intensity can be provided.
  • the light emitting layer is formed by using a multi-wavelength light emitting group III nitride semiconductor single layer capable of simultaneously emitting multi-wavelength light having different wavelengths in a wavelength range of 400 nm to 550 nm.
  • the group III nitride semiconductor LED which emits the white light of the pastel tone of green, red or blue, and the light hue (green) can be provided.
  • the light emitting layer includes silicon as a donor impurity in an atomic concentration range of 6 ⁇ 10 17 cm ⁇ 3 to 5 ⁇ 10 19 cm ⁇ 3 , and A multi-wavelength emission group III nitride semiconductor single layer containing magnesium as an acceptor impurity and having a lower electrical resistance at a lower concentration than silicon and having an atomic concentration in the range of 5 ⁇ 10 16 cm ⁇ 3 to 3 ⁇ 10 18 cm ⁇ 3.
  • silicon as a donor impurity in an atomic concentration range of 6 ⁇ 10 17 cm ⁇ 3 to 5 ⁇ 10 19 cm ⁇ 3
  • the light-emitting layer includes magnesium at a lower atomic concentration than silicon and higher than the atomic concentration of hydrogen, and has a multi-wavelength light emission having a low electrical resistance and a different wavelength.
  • a white LED with a low forward voltage can be stably provided by using a multi-wavelength emitting group III nitride semiconductor single layer capable of emitting light.
  • the light emitting layer has a hydrogen atomic concentration of 2 ⁇ 10 18 cm ⁇ 3 or less, and multiwavelength light emitting group III nitride with low electrical resistance capable of emitting white light.
  • a white LED having a low forward voltage can be provided particularly stably.
  • the light-emitting layer includes a magnesium atom concentration lower than the silicon atom concentration and higher than the carbon atom concentration, and has a low electrical resistance capable of emitting white light.
  • a white LED having a low forward voltage can be provided particularly stably by using the wavelength-emitting group III nitride semiconductor single layer.
  • the light-emitting layer includes carbon in an atomic concentration range of 2 ⁇ 10 18 cm ⁇ 3 or less, and can emit white light, and can emit white light.
  • the group nitride semiconductor single layer a white LED having a low forward voltage can be provided particularly stably.
  • the light-emitting layer includes a light emitting layer having a low atomic resistance that can emit white light, including a magnesium atomic concentration lower than a silicon atomic concentration and higher than an oxygen atomic concentration.
  • a white LED having a low forward voltage can be provided particularly stably by using the wavelength-emitting group III nitride semiconductor single layer.
  • the light-emitting layer includes oxygen in an atomic concentration range of 1 ⁇ 10 18 cm ⁇ 3 or less, and emits white light and has a low electrical resistance.
  • the group nitride semiconductor single layer a white LED having a low forward voltage can be provided particularly stably.
  • the light emitting layer includes a magnesium atomic concentration lower than the silicon atomic concentration and higher than the atomic concentration of boron (element symbol: B), and can emit white light.
  • B atomic concentration of boron
  • a multi-wavelength light emitting group III nitride semiconductor layer can be provided as a light emitting layer capable of emitting white light by mixed light even if it is a single single layer in number.
  • the multi-wavelength light emitting group III nitride semiconductor layer as a light emitting layer capable of emitting white light having excellent color rendering properties by mixing light in a wavelength range of 400 nm to 750 nm. Can be provided.
  • the multi-wavelength light emitting group III nitride semiconductor is suitable for emitting green, red or blue, greenish white light in a wavelength range of 500 nm or more and 750 nm or less. Can provide a layer.
  • the multi-wavelength light emitting group III nitride semiconductor is suitable for emitting green, red, blue, or greenish white light in a wavelength range of 400 nm to 550 nm. Can provide a layer.
  • the atomic concentration is in the range of 6 ⁇ 10 17 cm ⁇ 3 to 5 ⁇ 10 19 cm ⁇ 3 and contains silicon as a donor impurity and has an atomic concentration lower than that of silicon.
  • magnesium as an acceptor impurity in the range of 5 ⁇ 10 16 cm ⁇ 3 or more and 3 ⁇ 10 18 cm ⁇ 3 or less, in addition to band edge emission, a total of 3 or more multi-wavelength emission having different emission wavelengths can be obtained.
  • a multi-wavelength light emitting group III nitride semiconductor layer having low electrical resistance can be provided.
  • the electrical resistance that causes a multi-wavelength emission of a total of three or more different emission wavelengths by containing magnesium at a lower atomic concentration than silicon and higher than the atomic concentration of hydrogen A multi-wavelength light emitting group III nitride semiconductor layer having a small size can be provided.
  • a multiwavelength light emitting group III nitride semiconductor that has a low electrical resistance and can be preferably used as a white light emitting layer by setting the atomic concentration of hydrogen to 2 ⁇ 10 18 cm ⁇ 3 or less.
  • a layer can be provided stably.
  • the electrical resistance that includes magnesium at a lower atomic concentration than silicon and higher than the atomic concentration of carbon causes a total of three or more multi-wavelength emissions having different emission wavelengths.
  • a multi-wavelength light emitting group III nitride semiconductor layer having a small size can be provided.
  • a multi-wavelength light emitting group III nitride semiconductor that has a low electrical resistance and can be preferably used as a white light emitting layer by setting the atomic concentration of carbon to 2 ⁇ 10 18 cm ⁇ 3 or less.
  • a layer can be provided stably.
  • an electrical resistance that provides a total of three or more multi-wavelength emissions having different emission wavelengths.
  • a multi-wavelength light emitting group III nitride semiconductor layer having a small size can be provided.
  • the multiwavelength light emitting group III nitride semiconductor that has a low electrical resistance and can be preferably used as a white light emitting layer by setting the atomic concentration of oxygen to 1 ⁇ 10 18 cm ⁇ 3 or less.
  • a layer can be provided stably.
  • a multi-wavelength light emitting group III nitride semiconductor layer having a small size can be provided.
  • PL photoluminescence
  • GaN shows a high-speed reflection electron diffraction image of GaN showing a (2 ⁇ 2) surface rearrangement structure.
  • It is a high-speed reflection electron diffraction image of GaN showing a (3 ⁇ 3) surface rearrangement structure.
  • It is the surface photograph after the wet process of the GaN layer which contains a gallium stoichiometrically richer than nitrogen.
  • It is the surface photograph after the wet process of the GaN layer which contains nitrogen stoichiometrically richer than gallium. It is an emission spectrum of nitrogen plasma suitable for implementation of the present invention.
  • FIG. 2 is a room temperature photoluminescence (PL) spectrum of a multiwavelength light emitting group III nitride semiconductor monolayer described in Example 1.
  • FIG. 3 is a diagram showing SIMS analysis results of atomic concentrations of elements in the multiwavelength light emitting layer described in Example 1.
  • FIG. 2 is a room temperature photoluminescence (PL) spectrum of a multiwavelength light emitting group III nitride semiconductor single layer described in Example 2.
  • FIG. 6 is a transmission electron microscope (TEM) image showing a cross-sectional structure of a light emitting layer having an MQW structure according to Example 3.
  • FIG. It is a room temperature cathodoluminescence (CL) spectrum obtained from the MQW structure shown in FIG.
  • TEM transmission electron microscope
  • FIG. 6 is a diagram showing a light emission pattern of an LED including a multiwavelength light emitting group III nitride semiconductor single layer described in Example 4; 6 is a schematic diagram showing a cross-sectional structure of an LED described in Example 5. FIG. It is a schematic diagram which shows the planar structure of LED shown in FIG.
  • FIG. 1 is an example of a photoluminescence (PL) spell spectrum of a multi-wavelength light emitting group III nitride semiconductor layer.
  • the multi-wavelength light emitting group III nitride semiconductor layer to which the present embodiment is applied is capable of emitting multi-wavelength light of different wavelengths at the same time while being numerically single, such as a semiconductor material substrate or a metal material substrate Provided on the substrate.
  • the substrate may be a glass substrate, a metal oxide crystal substrate such as sapphire ( ⁇ -Al 2 O 3 single crystal) or zinc oxide (ZnO) having a polar or nonpolar crystal plane, 6H, 4H or 3C type carbonization.
  • the substrate examples include semiconductor crystals such as silicon (SiC), silicon (Si), and gallium nitride (GaN).
  • the base is not limited to a bulk crystal substrate, and an epitaxial growth layer made of a group III nitride semiconductor such as GaN or a group III-V compound semiconductor such as boron phosphide (BP) is used. be able to.
  • the substrate or epitaxial growth layer made of the above material is a group III nitride semiconductor layer (multi-wavelength light emitting group III) that emits light of a plurality of wavelengths having different wavelengths at the same time although it is a single layer (single layer).
  • group III nitride semiconductor layer multi-wavelength light emitting group III
  • This can be used when a light emitting layer having a quantum well structure is formed using a nitride semiconductor single layer) as a well layer.
  • a light emitting layer is formed by using a plurality of multiwavelength group III nitride semiconductor single layers emitting a lot of light emission (multiwavelength light) in a wide wavelength range as well layers.
  • a so-called multiple quantum well structure having a plurality of well layers is advantageous for obtaining a white LED or the like by mixing light from each multi-wavelength light emitting group III nitride semiconductor single layer. .
  • the multi-wavelength light emitting group III nitride semiconductor single layer is composed of a group III nitride semiconductor material to which a donor impurity and an acceptor impurity are added together.
  • a group III element such as gallium is stoichiometrically richer than a group V element such as nitrogen containing gallium as an essential constituent element. It is made of a group III nitride semiconductor material capable of simultaneously emitting three or more lights having different wavelengths in a wavelength range longer than that of light emission.
  • a functional layer capable of simultaneously emitting three or more multi-wavelength lights having different wavelengths in a wavelength range of 400 nm to 750 nm is used.
  • multi-wavelength light having different wavelengths can be emitted simultaneously in a wavelength range of 500 nm to 750 nm
  • three or more multi-wavelength lights having different wavelengths can be emitted simultaneously in a range of 400 nm to 750 nm.
  • Use functional layer This is because a white LED excellent in color rendering can be obtained by mixing light components of blue-green to red having a wavelength of 500 nm to 750 nm as components.
  • multi-wavelength light having different wavelengths can be simultaneously emitted in a wavelength range of 400 nm to 550 nm, and A functional layer capable of simultaneously emitting multi-wavelength light having different wavelengths in the range of 400 nm to 750 nm is used. If a plurality of blue-green to red light emission having a wavelength of 500 nm to 750 nm is mixed with a plurality of blue-purple to green light emission having a wavelength of 400 nm to 550 nm, a white LED with better color rendering can be obtained. Because it can.
  • the wavelength of each luminescence constituting multi-wavelength emission depends on observing the spectrum emitted when electrons excited in the conduction band and holes in the valence band recombine, that is, the emission spectrum due to radiative recombination. It can be measured. Specific measurement methods include a photoluminescence (abbreviation: PL) method and a cathodoluminescence (abbreviation: CL) method.
  • PL photoluminescence
  • CL cathodoluminescence
  • the multi-wavelength emission group III nitride semiconductor single layer capable of expressing the function of simultaneously emitting three or more multi-wavelength lights having different wavelengths has silicon (Si) as a donor impurity.
  • a group III nitride semiconductor material containing magnesium (Mg) as an acceptor impurity For example, gallium (Ga) such as gallium indium nitride (composition formula Ga X In 1-X N: 0 ⁇ X ⁇ 1) having a multiphase structure including a plurality of phases having different indium compositions is used as a constituent element. It can be comprised from the group III nitride semiconductor material containing.
  • a layer having a large gallium (Ga) composition ( X) or indium (In) composition (1-X), such as GaN or indium nitride (InN), which does not have phase separation in the first place, Ga caused by phase separation. Due to the non-uniformity of the indium concentration in the X In 1-X N layer, it is possible to avoid uneven distribution of silicon (Si) and magnesium (Mg) in the layer. Thereby, it becomes advantageous to make uniform the wavelength of each light emission which makes multiwavelength light emission based on the optical transition between the levels which silicon (Si) and magnesium (Mg) form.
  • the atomic concentration of silicon (Si) in the multi-wavelength light emitting group III nitride semiconductor monolayer is 6 ⁇ 10 17 cm ⁇ 3 or more and 5 ⁇ 10 19 cm ⁇ 3 or less, and the atomic concentration of magnesium (Mg) is 5
  • the range is 6 ⁇ 10 17 cm ⁇ 3 or more and 5 ⁇ 10 19 cm ⁇ 3 or less
  • the atomic concentration of magnesium (Mg) is 5
  • the atomic concentrations of silicon (Si) and magnesium (Mg) in the multi-wavelength light emitting group III nitride semiconductor single layer can be quantified by, for example, secondary ion mass spectrometry (English abbreviation: SIMS).
  • a multi-wavelength light emitting group III nitride semiconductor single layer containing silicon (Si) and magnesium (Mg) is, for example, a metal organic vapor phase deposition (abbreviated as MOCVD or MOVPE) method, a molecular beam epitaxial (MBE) method, It can be formed by a vapor phase growth method such as a hydride method or a halide method.
  • MOCVD metal organic vapor phase deposition
  • MBE molecular beam epitaxial
  • the atomic concentration of silicon (Si) and magnesium (Mg) in the multi-wavelength light emitting group III nitride semiconductor monolayer adjusts the doping amount of Si and Mg into the same layer. Adjust with things.
  • silanes such as silane (molecular formula: SiH 4 ) and methylsilane (molecular formula: CH 3 SiH 3 ) can be used as a doping source for silicon (Si).
  • an organomagnesium compound such as biscyclopentadienylmagnesium (abbreviation: Cp 2 Mg) can be used as a magnesium (Mg) doping source.
  • the MBE method has an advantage that a multi-wavelength light emitting group III nitride semiconductor single layer forming a well layer can be formed at a lower temperature than the above other vapor phase growth methods. For this reason, for example, magnesium (Mg) added (doping) to the multi-wavelength light emitting group III nitride semiconductor single layer forming the well layer is suppressed from thermal diffusion to the barrier layer bonded to the well layer and forming the MQW structure. It becomes an advantageous growth means. For example, in an MQW structure composed of an n-type Ga 0.94 In 0.06 N well layer and an n-type GaN barrier layer that does not cause phase separation, magnesium (Mg), which is an acceptor impurity, diffuses into the barrier layer.
  • Mg magnesium
  • Intrusion can be suppressed, and it is effective to prevent the barrier layer from becoming high resistance or to prevent the conduction type from being converted to p-type. Thereby, formation of a pn junction between the well layer and the barrier layer can be avoided. Accordingly, since the MQW structure can be configured from the well layer and the barrier layer exhibiting the same conductivity type, the MQW structure light emitting layer having excellent electrical conductivity can be configured.
  • the atomic concentration of silicon (Si) is 4 ⁇ 10 18 cm ⁇ 3
  • the atomic concentration of magnesium (Mg) is 2 ⁇ 10 16 cm ⁇ 3 less than 5 ⁇ 10 16 cm ⁇ 3.
  • GaN band edge emission occurs, no emission occurs in a wavelength range of 400 nm to 700 nm.
  • magnesium (Mg) is doped so that the atomic concentration of silicon (Si) is the same and the atomic concentration is 8 ⁇ 10 17 cm ⁇ 3 , a total of four elements are formed in the wavelength region of 400 nm to 700 nm.
  • a GaN single layer that simultaneously emits multi-wavelength light having different wavelengths can be formed.
  • the doping amount of magnesium (Mg) is increased, that is, as the atomic concentration of magnesium (Mg) in the layer is increased, multi-wavelength light can be generated in a longer wavelength band.
  • the doping amount of magnesium (Mg) is increased, that is, as the atomic concentration of magnesium (Mg) in the layer is increased, multi-wavelength light can be generated in a longer wavelength band.
  • the atomic concentration of silicon (Si) is 1 to 4 ⁇ 10 19 cm ⁇ 3 and the atomic concentration of magnesium (Mg) is 4 ⁇ 10 16 cm ⁇ 3 .
  • the multiwavelength light emitting group III nitride semiconductor single layer capable of simultaneously emitting multiwavelength light in a shorter wavelength region , And arranged above the light emission extraction direction. This is to avoid absorption of light emitted from the well layer made of the multi-wavelength light emitting group III nitride semiconductor single layer located below and efficiently extract the multi-wavelength light to the outside of the LED.
  • a single or first multiple well structure having a multi-wavelength light emitting group III nitride semiconductor single layer emitting a multi-wavelength light in a region near a wavelength of 600 nm to 700 nm as a well layer On the upper side, a single or second multiple quantum well structure having a multi-wavelength light emitting group III nitride semiconductor single layer emitting a multi-wavelength light in a wavelength region of 400 nm to 550 nm as a well layer is provided.
  • a light-emitting part having a structure is configured.
  • the barriers forming the first and second quantum well structures The constituent materials of the layers are not necessarily the same.
  • the barrier layers of the first and second quantum well structures can be composed of a group III nitride semiconductor single layer selected corresponding to the forbidden band width of the well layer made of a multiwavelength light emitting group III nitride semiconductor single layer.
  • a barrier layer is formed from aluminum gallium nitride (compositional formula Al X Ga 1-X N: 0 ⁇ X ⁇ 1), and the second quantum well structure is formed of Al Y Y Ga 1-Y N: 0 ⁇ Y ⁇ 1, where Y ⁇ X).
  • a multi-wavelength emission group III nitride semiconductor single layer capable of simultaneously emitting multi-wavelength emission is stoichiometrically rich with respect to group V elements and group III elements of the periodic table of elements. It is comprised from the group III nitride semiconductor layer containing.
  • the fact that the Group III element is stoichiometrically rich with respect to the Group V element is, for example, a binary system (two elements) such as aluminum nitride (AlN), gallium nitride (GaN), or indium nitride (InN).
  • gallium (Ga), indium (In), or aluminum (Al) is stoichiometrically richer than nitrogen.
  • group III nitride semiconductor layer such as aluminum nitride
  • gallium arsenide nitride compositional formula GaAs 1- ⁇ N ⁇ : 0 ⁇ ⁇ 1)
  • aluminum phosphide nitride compositional formula AlP 1- ⁇ N ⁇ : 0 ⁇ ⁇ 1)
  • a group III nitride semiconductor layer containing a group V element in this example, arsenic (element symbol: As) and phosphorus (element symbol: P)
  • a group III element gallium (Ga) or aluminum (Al) is used.
  • the atomic concentration is higher than the total atomic concentration of nitrogen (N) and the group V elements other than nitrogen. If the ratio of the total amount of atomic concentrations of Group III and Group V elements is 1: 1, it is neither Group III element rich nor Group V element rich and stoichiometric.
  • the deviation of the stoichiometric composition can be determined, for example, by examining the rearranged structure of the surface of the group III nitride semiconductor layer by an electron beam diffraction technique such as high-speed reflection electron diffraction (abbreviation: RHEED).
  • RHEED high-speed reflection electron diffraction
  • the RHEED method can be effectively used in a growth means for depositing a group III nitride multi-wavelength light emitting layer on a substrate in a vacuum such as a solid source MBE method or a gas source MBE method.
  • the group III element of the periodic table of elements such as gallium necessary for the deposited layer on the substrate to simultaneously emit multiple wavelengths is stoichiometrically richer than the group V element such as nitrogen. It can be confirmed in real time (real-time) in the growth field that it is a group nitride semiconductor layer.
  • the Group III nitride semiconductor layer which is produced by continuously generating bright lines due to the structure, is stoichiometrically richer in Group III elements than Group V elements as a whole.
  • a group III element of the periodic table of elements such as aluminum (Al), gallium (Ga), or indium (In) in a stoichiometrically rich amount relative to a group V element such as nitrogen
  • GaN contains gallium (Ga) richer than nitrogen
  • a diffraction pattern indicating rearrangement such as (2 ⁇ 2) appears on the RHEED pattern.
  • FIG. 2 is a high-speed backscattered electron diffraction image of GaN showing a (2 ⁇ 2) surface rearrangement structure.
  • FIG. 2 illustrates a (2 ⁇ 2) RHEED pattern from a gallium nitride (GaN) layer containing gallium (Ga) stoichiometrically richer than nitrogen (N).
  • FIG. 3 is a high-speed backscattered electron diffraction image of GaN showing a (3 ⁇ 3) surface rearrangement structure.
  • FIG. 3 illustrates an RHEED pattern from a gallium nitride (GaN) layer containing nitrogen (N) in a stoichiometric richer form than gallium (Ga).
  • the (3 ⁇ 3) rearrangement structure that occurs when nitrogen (N) is richer than gallium (Ga) is shown.
  • the group III nitride semiconductor layer contains a group III element in a stoichiometrically rich manner can be investigated by a wet etching method in addition to the RHEED method.
  • a wet etching method in addition to the RHEED method.
  • KOH potassium hydroxide
  • FIG. 4 is a surface photograph after wet processing of a GaN layer containing gallium in a stoichiometrically richer amount than nitrogen.
  • FIG. 5 is a photograph of the surface of the GaN layer containing nitrogen stoichiometrically richer than gallium after wet processing. As shown in FIG.
  • a group III nitride semiconductor layer containing gallium as a group III element in a stoichiometric richer form than nitrogen is hardly eroded even when immersed in the above alkaline aqueous solution (see FIG. 4). ).
  • the group III nitride semiconductor layer rich in nitrogen (N) than gallium (Ga) it is eroded to the deep part of the same layer, and coarse gallium nitride (GaN) is scattered. (See FIG. 5).
  • a group III nitride semiconductor layer containing a group III element stoichiometrically richer than a group V element a group III nitride semiconductor layer containing a stoichiometric composition or a group V element richer
  • a multi-wavelength light emitting group III nitride semiconductor single layer exhibiting higher intensity light emission can be formed.
  • gallium (Ga) is formed by solid source MBE using a silicon (Si) simple metal as a silicon (Si) doping source and a magnesium (Mg) single metal as a magnesium (Mg) doping source.
  • the maximum PL intensity from the Si and Mg-doped multi-wavelength light-emitting GaN layer including the abundant and having a (2 ⁇ 2) rearranged structure on the surface is 1.
  • the PL intensity of Si and Mg-doped GaN layers grown by solid source MBE method with a (3 ⁇ 3) rearranged surface and nitrogen (N) stoichiometrically rich is relatively 0.08 is extremely weak.
  • the function of simultaneously emitting multi-wavelength light is a function of absorbing a plurality of lights having different wavelengths. Therefore, the multi-wavelength light emitting group III nitride semiconductor single layer according to the present invention is not only a single wavelength light, but also a light absorption layer for photoelectric conversion that efficiently absorbs a plurality of lights having different wavelengths, for example, It is also advantageous for constituting the light receiving layer of the solar cell.
  • a multi-wavelength light emitting group III nitride semiconductor single layer having a low content of transition metal elements is convenient because it can suppress a change in excitation current with time due to capture of deep level electrons or holes. Can be used.
  • nitrogen plasma having a special configuration is used.
  • the nitrogen plasma having a special configuration is a nitrogen plasma that hardly emits light (including the case where it does not occur) that originates from the second positive band of nitrogen molecules (second positive molecular series).
  • Nitrogen plasma that does not emit light derived from the second positive band of nitrogen molecules generated by applying high frequency to high purity nitrogen gas is optimal as the nitrogen plasma according to the present invention.
  • the volume concentration is set to oxygen gas (molecular formula O 2 ) concentration less than 0.1 ppm, and carbon monoxide (molecular formula: CO).
  • O 2 oxygen gas
  • CO 2 carbon monoxide
  • the concentration of carbon dioxide (molecular formula: CO 2 ) is less than 0.1 ppm
  • the concentration of hydrocarbon gases is less than 0.05 ppm
  • the concentration of moisture (molecular formula: H 2 O) is less than 0.55 ppm.
  • the presence or absence of light emission derived from the second positive band of nitrogen molecules in the nitrogen plasma can be known from the emission spectrum from the nitrogen plasma.
  • the emission spectrum of the nitrogen plasma can be measured using a general spectrometer.
  • Light emission derived from the second positive band of the nitrogen molecule occurs in a wavelength range of 250 nm to 370 nm.
  • FIG. 6 shows an emission spectrum of nitrogen plasma suitable for this embodiment.
  • FIG. 6 shows an emission spectrum from a nitrogen plasma suitable for depositing a multi-wavelength light emitting group III nitride semiconductor single layer by a high frequency plasma MBE method, measured using a diffraction grating type spectroscope.
  • the nitrogen plasma suitable for the present embodiment is a nitrogen plasma that does not emit light derived from the second positive band of nitrogen molecules in the range of 300 nm to 370 nm, as shown in FIG. If the above-described high-purity nitrogen gas is used, nitrogen plasma that does not generate light emission derived from the second positive band of nitrogen molecules can be easily generated.
  • the emission spectrum illustrated in FIG. 6 is obtained by inputting high frequency nitrogen at a frequency of 13.56 megahertz (unit: MHz) at a power of 400 watts (unit: W) into high purity nitrogen gas having a flow rate set to 0.4 cc / min. This is when it is generated.
  • the frequency of the high frequency for forming the multi-wavelength light emitting group III nitride semiconductor layer according to the present invention is 13.56 MHz
  • the input power is suitably 200 W or more and 600 W or less. Furthermore, it is more suitable to set it as the range of 250W or more and 450W or less. If power exceeding 600 W is input, the intensity of light emission derived from the second positive band of nitrogen molecules increases, which is not suitable.
  • the input power is as low as less than 250 W, sufficient nitrogen plasma cannot be generated to stably form the multi-wavelength light emitting group III nitride semiconductor layer. This is not desirable because it increases the probability of a discontinuous group III nitride semiconductor layer containing gallium (Ga) droplets rather than layered.
  • Nitrogen plasma that hardly emits light from the second positive band of nitrogen molecules means that the intensity of light emission caused by the second positive band of nitrogen molecules is higher than the light emission intensity caused by atomic nitrogen having a wavelength of 745 nm. 1/10 or less.
  • Another feature of the nitrogen plasma suitable for forming the multi-wavelength light emitting group III nitride semiconductor single layer of this embodiment is that three atomic atoms appearing at wavelengths of 745 nm, 821 nm, and 869 nm.
  • the relative intensity of the emission peak of nitrogen In the present invention, the intensity of the emission peak at a wavelength of 745 m is the highest, the intensity of the emission peak at a wavelength of 869 m is next high, and the intensity of the emission peak at a wavelength of 821 nm is 3 emission peaks. It is the lowest of all.
  • each single layer has a second positive band of nitrogen molecules. Therefore, nitrogen plasma which does not generate light emission or generates little light emission is formed as a nitrogen source.
  • a multi-wavelength light emitting group III nitride semiconductor single layer is used as one well layer, and a plurality of well layers are used to form a light emitting layer having a multiple quantum well (English abbreviation: MQW) structure. I will explain.
  • each well layer forming the light emitting layer of the MQW structure does not emit light due to the second positive band of nitrogen molecules. Or deposited in a nitrogen plasma environment that produces little emission. Further, for example, regardless of whether the layer thickness is the same or different, each well layer does not emit light due to the second positive band of nitrogen molecules, or generates a nitrogen plasma environment that hardly emits light. Deposits within.
  • Example 1 In Example 1, a case where the multi-wavelength light emitting group III nitride semiconductor single layer to which the present embodiment is applied is composed of a gallium nitride indium (GaInN) single layer is taken as an example, and FIGS. 7 and 8 are used. I will explain.
  • FIG. 7 is a room temperature photoluminescence (PL) spectrum of the multiwavelength light emitting group III nitride semiconductor single layer described in Example 1.
  • FIG. 8 is a diagram showing SIMS analysis results of atomic concentrations of elements in the multi-wavelength light emitting layer described in Example 1.
  • FIG. 7 is a room temperature photoluminescence (PL) spectrum of the multiwavelength light emitting group III nitride semiconductor single layer described in Example 1.
  • FIG. 8 is a diagram showing SIMS analysis results of atomic concentrations of elements in the multi-wavelength light emitting layer described in Example 1.
  • FIG. PL room temperature photoluminescence
  • the pressure in the growth chamber made of stainless steel during growth was 5 ⁇ 10 ⁇ 3 Pascal (pressure unit: Pa).
  • the amount of flux of gallium (Ga) was 1.1 ⁇ 10 ⁇ 4 Pa.
  • the pressure in the growth chamber during growth was 5 ⁇ 10 ⁇ 3 Pa.
  • an indium (In) composition that makes the indium composition in the layer uniform is 0.02
  • the pressure in the growth chamber during growth was 5 ⁇ 10 ⁇ 3 Pa.
  • the flux amount of gallium (Ga) was 1.1 ⁇ 10 ⁇ 4 Pa, and the flux amount of indium (In) was 1.3 ⁇ 10 ⁇ 6 Pa.
  • the surface structure was observed in real time by high-energy electron diffraction (RHEED). From the growing surface, as illustrated in FIG. 2 described above, when the indium (In) composition is small, the group III elements gallium (Ga) and indium (In) are stoichiometrically richer than nitrogen. An RHEED pattern showing a (2 ⁇ 2) rearrangement structure indicating that it was present was obtained.
  • the flow rate of nitrogen gas was 2.0 cc / min.
  • a circular jet plate having a plurality of fine holes each having a diameter of 0.5 mm is provided in an opening facing the base of a cell for generating nitrogen plasma, and is 250 nanometers (unit: nm)
  • the intensity of the emission peak due to the second positive band of the nitrogen molecule in the wavelength region of 370 nm or less was reduced.
  • FIG. 7 shows a PL spectrum of the above laminated structure having a Ga 0.98 In 0.02 N single layer as a surface.
  • He—Cd helium-cadmium
  • Table 1 summarizes the emission peak wavelengths and the intensities (arbitrary units) constituting the multiwavelength emission shown in FIG.
  • the band edge emission the emission with the shortest wavelength of 364.7 nm in the PL spectrum shown in FIG.
  • the emission constituting the multi-wavelength emission is two in the wavelength range of 400 nm or less, and 400 nm. Except for the band edge emission, two lights were emitted in the wavelength range exceeding 500 nm and two in the wavelength band exceeding 500 nm and 600 nm or less, and a total of six lights were emitted in the wavelength band not exceeding 600 nm. For this reason, it was visually recognized that the emission color when the surface of the structure was irradiated with the laser excitation light was almost white.
  • FIG. 8 shows the concentration distribution of silicon (Si) and magnesium (Mg) in the depth direction from the surface of the Ga 0.98 In 0.02 N single layer.
  • the concentration distribution of these elements was measured by a general secondary ion mass spectrometry (SIMS) method.
  • the atomic concentration of silicon (Si) is 3 ⁇ 10 18 atoms / cm 3 , and the distribution is almost constant in the depth direction except for the region near the surface of the Ga 0.98 In 0.02 N single layer.
  • the atomic concentration of magnesium (Mg) is 8 ⁇ 10 17 atoms / cm 3 , and this is almost constant in the depth direction except for the region near the surface of the Ga 0.98 In 0.02 N single layer. It was distributed in atomic concentration.
  • the atomic concentration of both elements is measured to be higher than the depth of the layer because it is adsorbed on the surface of the monolayer. This was interpreted as due to analytical interference caused by oxygen (element symbol: O) and the like.
  • the atomic concentration ratio of magnesium (Mg) to silicon (Si) was a substantially constant ratio of 0.27 in the region from the vicinity of the Ga 0.98 In 0.02 N single layer surface to a depth of about 650 nm.
  • FIG. 8 shows the concentration distribution of hydrogen (H), carbon (C), and oxygen (O) in the depth direction from the surface of the Ga 0.98 In 0.02 N single layer.
  • the concentration distribution of these elements was also measured by a general SIMS method.
  • Atomic concentration of hydrogen (H), carbon (C), and oxygen (O) in the region deeper than the region near the surface of the Ga 0.98 In 0.02 N single layer (the region from the surface to about 70 nm) Were almost constant. Further, when the atomic concentrations of the three elements of hydrogen (H), carbon (C), and oxygen (O) were compared, hydrogen (H) was the highest and oxygen (O) was the lowest.
  • any atomic concentration was higher than the magnesium (Mg) atomic concentration. It was low.
  • the atomic concentration of magnesium (Mg) at the center of the layer thickness of Ga 0.98 In 0.02 N single layer (depth of 400 nm from the surface) is 8 ⁇ 10 17 cm ⁇ 3.
  • the atomic concentration of hydrogen (H) is 9 ⁇ 10 16 cm ⁇ 3
  • the next highest concentration carbon (C) is 3 ⁇ 10 16 cm ⁇ 3, which is the lowest oxygen among the three elements (
  • the atomic concentration of O) was 2 ⁇ 10 16 cm ⁇ 3 .
  • Example 2 The present invention will be described with reference to FIG. 9, taking as an example the case of forming a gallium nitride indium (GaInN) single layer as a multiwavelength light emitting group III nitride semiconductor single layer on a sapphire substrate.
  • FIG. 9 is a room temperature photoluminescence (PL) spectrum of the multiwavelength light emitting group III nitride semiconductor single layer described in Example 2.
  • the atomic concentration of silicon (Si) is approximately 4 ⁇ 10 18 atoms / cm 3 as in Example 1 above, and Ga 0.98 In 0 It was distributed at a substantially constant atomic concentration in the depth direction except for the region near the surface of the .02 N monolayer.
  • the atomic concentration of magnesium (Mg) is also 8 ⁇ 10 17 atoms / cm 3 as in Example 1 above, and is almost in the depth direction except for the region near the surface of the Ga 0.98 In 0.02 N single layer. It was distributed at a certain atomic concentration.
  • the atomic concentration of hydrogen (H) is 1 ⁇ 10 17 cm ⁇ 3
  • the atomic concentration of carbon (C) is 1 ⁇ 10 16 cm ⁇ 3
  • the atomic concentration of oxygen (O) is 5 ⁇ 10 16 cm -3 . All were lower than the atomic concentration of magnesium (Mg).
  • FIG. 9 shows a PL spectrum of the above laminated structure having a Ga 0.98 In 0.02 N single layer as a surface.
  • He—Cd helium-cadmium
  • Light emission occurs on the photon energy side lower than the band edge emission of GaN having a photon energy of 3.4 electron volts (unit: eV).
  • the intensity differs depending on the photon energy, it has a continuous spectrum in which light emission having different wavelengths of at least 3 or more is superimposed in the range of 3.4 eV to 2.0 eV. For this reason, it was visually recognized that the emission color when the surface of the structure was irradiated with the laser excitation light was white.
  • Example 3 A multi-wavelength light emitting layer having a multiple quantum well (abbreviation: MQW) structure in which a gallium nitride indium (GaInN) single layer emitting a plurality of lights (multi-wavelength light) having different wavelengths according to the present invention is used as a well.
  • MQW multiple quantum well
  • FIGS. 10 and 11 An example of the configuration will be described with reference to FIGS. 10 and 11.
  • FIG. 10 is a transmission electron microscope (TEM) image showing a cross-sectional structure of the light emitting layer having the MQW structure according to the third embodiment.
  • FIG. 11 is a room temperature cathodoluminescence (CL) spectrum obtained from the MQW structure shown in FIG.
  • TEM transmission electron microscope
  • CL room temperature cathodoluminescence
  • the MQW structure using a Ga 0.94 In 0.06 N multi-wavelength light emitting layer as a well layer has an antimony (element symbol: Sb) -doped n-type silicon (Si) substrate surface with a crystal plane orientation of (111) on the surface. Formed.
  • the surface of the substrate is cleaned using an inorganic acid such as hydrofluoric acid (chemical formula: HF), and then transferred to a growth chamber of a molecular beam epitaxial (MBE) growth apparatus.
  • the inside of the growth chamber is 7 ⁇ 10 ⁇ . It was evacuated to an ultrahigh vacuum of 5 Pascal (pressure unit: Pa). Thereafter, the substrate temperature was raised to 780 ° C. while maintaining the degree of vacuum in the growth chamber, and heating was continued until the surface of the substrate exhibited a surface rearrangement structure having a (7 ⁇ 7) structure.
  • nitrogen converted into plasma by applying high frequency (13.56 MHz) is used as a nitrogen source.
  • the flow rate of nitrogen gas was 0.4 cc / min, and the amount of aluminum (Al) flux was 7.2 ⁇ 10 ⁇ 6 Pa.
  • Al X Ga 1-X N undoped aluminum gallium nitride
  • layer thickness 300 nm
  • the aluminum (Al) composition ratio (X) of the Al X Ga 1-X N composition gradient layer is a composition from 0.30 to 0 (zero) from the bonding surface with the AlN layer toward the surface of the composition gradient layer.
  • the Al composition was decreased linearly and continuously in proportion to the increase in the thickness of the gradient layer.
  • the flow rate of nitrogen gas was kept constant at 0.4 cc / min, and the flux amount of gallium (Ga) was kept constant at 1.3 ⁇ 10 ⁇ 4 Pa.
  • the amount of aluminum (Al) flux was set to 7.2 ⁇ 10 ⁇ 6 Pa at the start of growth of the composition gradient layer, and decreased linearly with the passage of the growth time.
  • the Al flux toward the surface of the AlN layer was blocked.
  • the growth conditions were set so that the thickness of the GaN layer was 1800 nm and the carrier concentration was 4 ⁇ 10 18 cm ⁇ 3 . Since the GaN layer has a thickness exceeding 1000 nm, nitrogen plasma was generated from two high-frequency nitrogen plasma generators attached to one MBE growth chamber only when this layer was grown. The flow rate of nitrogen gas was set to 1.5 cc / min for each generator.
  • the growth of the GaN layer was completed in 120 minutes by setting the flux amount of gallium (Ga) to 1.3 ⁇ 10 ⁇ 4 Pa.
  • the surface rearrangement structure during and after the growth of the GaN layer was a (2 ⁇ 2) structure indicating that gallium (Ga) is stoichiometrically richer than nitrogen (N) ( (See RHEED pattern shown in FIG. 2).
  • FIG. 10 shows a TEM image of a cross-sectional configuration of the MQW structure layer.
  • FIG. 11 shows a CL spectrum at room temperature obtained from Ga 0.94 In 0.06 N forming one well layer of the multiple quantum well structure forming the light emitting layer. It is clearly shown that a large number of light emission with different wavelengths are emitted even in a single layer.
  • band edge emission light emission of the shortest wavelength shown in FIG. 11
  • the RHEED patterns during and after the growth of the GaN layer forming the barrier layer having the multiple quantum well structure described above showed a (2 ⁇ 2) rearranged structure (see FIG. 2).
  • the RHEED pattern during the growth and at the end of the Ga 0.94 In 0.06 N layer forming the well layer of the multiple quantum well structure showed a (3 ⁇ 1) rearranged structure.
  • the pair of structural units in the above-mentioned multiple quantum well structure is composed of a GaN layer containing gallium (Ga) in a stoichiometric richer form than nitrogen (N), and a group III element (gallium (Ga)). And an indium (In)) Ga 0.94 In 0.06 N layer stoichiometrically richer than nitrogen (N).
  • the atomic concentration of silicon (Si) contained in the Ga 0.94 In 0.06 N well layer was 7 ⁇ 10 18 cm ⁇ 3 .
  • the surface of the multiple quantum well structure in which the above eight pairs of structural units are stacked has the intensity of the emission peak due to the second positive band of nitrogen molecules in the wavelength region of 250 nm to 370 nm. Combined with the use of nitrogen plasma having an intensity of 1/10 or less of the emission peak intensity of atomic nitrogen at 745 nm, a good flat surface without irregularities was obtained.
  • the atomic concentration of hydrogen (H) in the multiple quantum well structure including the Ga 0.98 In 0.02 N well layer is 3 ⁇ 10 16 cm ⁇ 3
  • the atomic concentration of carbon (C) is 1 ⁇ 10 6.
  • 17 is cm -3
  • the atomic concentration of oxygen (O) was the lowest 2 ⁇ 10 16 cm -3 in the three elements.
  • Example 1 Ga 0.98 In doped with silicon (Si) and magnesium (Mg) simultaneously on the (111) surface of the n-type (111) -silicon substrate by high frequency nitrogen plasma MBE method. A 0.02 N monolayer was grown. However, in this comparative example 1, the layer thickness of the Ga 0.98 In 0.02 N single layer was set to 400 nm, which is half of the case of the above-mentioned example 1.
  • the concentration distribution of magnesium (Mg) atoms in the increasing direction of the layer thickness is different from that of the above-mentioned example 1, while simultaneously doping and growing silicon (Si) and magnesium (Mg).
  • Si silicon
  • Mg magnesium
  • a Ga 0.98 In 0.02 N single layer was grown.
  • the temperature of the magnesium (Mg) cell is uniformly set at a rate of 3 ° C. per minute from 340 ° C. at the start of growth of the Ga 0.98 In 0.02 N single layer. At the end of the same layer growth for 30 minutes.
  • FIG. 12 is a diagram showing the results of SIMS analysis of the atomic concentration of an element in a single layer that does not cause multiwavelength light emission described in Comparative Example 1.
  • FIG. FIG. 12 shows the depth direction of magnesium (Mg), silicon (Si) and hydrogen (H) of the Ga 0.98 In 0.02 N single layer described in Comparative Example 1 measured by general SIMS analysis. The distribution of atomic concentration is shown. As shown in FIG. 12, silicon (Si) is distributed almost uniformly in the layer, and the atomic concentration thereof is substantially constant 5 ⁇ 10 18 cm ⁇ 3 in the layer.
  • the concentration of magnesium (Mg) atoms in the Ga 0.98 In 0.02 N single layer of Comparative Example 1 is not constant in the layer thickness direction. It was. For this reason, the ratio of the atomic concentration of magnesium (Mg) to silicon (Si) is 0.1 at the junction interface with the underlying GaN layer, which is 80 nm from the surface of the Ga 0.98 In 0.02 N single layer. The depth was 0.8 ⁇ 10 ⁇ 2 .
  • the hydrogen atoms are not substantially uniformly distributed in the depth direction as in the case of Example 1 above, and the depth corresponding to half the thickness of the Ga 0.98 In 0.02 N single layer is obtained.
  • the concentration gradually increased toward the surface.
  • the hydrogen atom concentration in the region where the concentration was low exceeded the atomic concentration of magnesium (Mg).
  • the hydrogen atom concentration is directed toward the surface of the same layer as if the atomic concentration of magnesium (Mg) gradually decreases toward the surface of the Ga 0.98 In 0.02 N monolayer. Gradually increased (see FIG. 12).
  • the atomic concentration of hydrogen (H) at a depth of 30 nm from the surface of the Ga 0.98 In 0.02 N single layer was 2 ⁇ 10 18 cm ⁇ 3 (see FIG. 12).
  • FIG. 13 is a diagram showing a room temperature PL spectrum of a single layer that does not generate multi-wavelength light described in Comparative Example 1.
  • FIG. 13 shows a PL spectrum at room temperature from a Ga 0.98 In 0.02 N monolayer.
  • broad (broad) light emission occurs at a wavelength near the band edge of gallium nitride (GaN) and in a region where the wavelength is about 550 nm to about 620 nm.
  • This broad light emission is referred to as yellow luminescence, and is presumed to be a light emission involving crystal defects (JACQUES I. PANKOVE and THEODEORE D.
  • MOUSTAKAS Editors
  • “Gallium Nitride (GaN) ICT EM ON SE, EM) SEMIMETALS Vol.50 (ACADEMIC PRESS, 1988) ", 291-295 are examples of crystal defects.
  • Example 4 In Example 4, a case where a group III nitride semiconductor device is configured by using a multilayer body including a multi-wavelength light emitting group III nitride semiconductor single layer that brings about a plurality of light emission having different wavelengths will be described with reference to FIG. The contents of the present invention will be described with reference to FIG.
  • FIG. 14 is a diagram showing a light emission pattern of an LED including the multiwavelength light emitting group III nitride semiconductor single layer described in Example 4.
  • FIG. 14 shows a light emission state when the LED described in Example 4 is energized.
  • a laminate of a pn junction type double hetero structure for use in a light emitting diode (LED) was formed.
  • nitrogen plasma MBE method nitrogen plasma that does not emit light due to the second positive band of nitrogen molecules was used as a nitrogen source.
  • the growth conditions were set so that the atomic concentration of magnesium (Mg) inside the p-type GaN layer was 1 ⁇ 10 19 cm ⁇ 3 .
  • the Mg-doped p-type GaN layer and the Ga 0.98 In 0.02 N single layer in the region for forming the n-type ohmic electrode were removed by a general dry etching method.
  • An n-type ohmic electrode was formed on the surface of the n-type gallium nitride layer exposed by removing these layers.
  • a p-type ohmic electrode and a pedestal (pad) electrode electrically connected thereto were formed to produce a light emitting diode (LED).
  • a phosphor for producing white light was not provided on the surface of a square planar LED chip having a side length of about 350 ⁇ m (unit: ⁇ m).
  • the forward voltage is 3.5 volts (unit: V) when the forward current of the diode is 20 milliamperes (unit: mA). It was. The forward voltage was fixed at 3.5 V, and the change with time in the forward current (so-called current drift) was measured. The forward current hardly changed over time from 20 mA.
  • Example 5 a light-emitting element configured by using a stacked body including a multi-quantum well (MQW) structure in which a multi-wavelength light emitting group III nitride semiconductor single layer that provides a plurality of light emission having different wavelengths is used as a well layer ( LED) will be described with reference to FIGS.
  • FIG. 15 is a schematic diagram showing a cross-sectional structure of an LED described in the fifth embodiment.
  • FIG. 16 is a schematic plan view of the LED shown in FIG.
  • the light emitting device (LED) 10 has an AlGaN composition gradient layer 103 on an AlN layer 102 formed on a Si substrate 101.
  • an n-type GaN layer 104, a multiple quantum well structure light-emitting layer 105, and a p-type GaN layer 106 are sequentially stacked. Furthermore, a p-type ohmic electrode 108 is formed on the p-type GaN layer 106, and an n-type ohmic electrode 107 is stacked in an exposed region formed in the n-type GaN layer 104.
  • a GaN barrier layer 105a and a GaInN well layer 105b are alternately stacked, and a GaN barrier layer 105a is stacked on the top layer.
  • a GaN barrier layer 105a is stacked on the top layer.
  • Example 5 the LED 10 was configured using the MQW structure described in Example 2 above as the light emitting layer 105 having a multiple quantum well structure.
  • the formation of the structure for LED 10 was completed. Growth conditions were set so that the atomic concentration of magnesium (Mg) inside the p-type GaN layer 106 would be 1 ⁇ 10 19 cm ⁇ 3 .
  • the p-type GaN layer 106 and the multiple quantum well structure light emitting layer 105 in the region where the n-type ohmic electrode 107 is to be formed were selectively removed by a general dry etching method. Thereafter, an n-type ohmic electrode 107 was formed on the surface of the n-type GaN layer 104 exposed by etching. A lattice-shaped p-type ohmic electrode 108 patterned using a general photolithography technique was formed on the surface of the p-type GaN layer 106 left after etching.
  • the p-type ohmic electrode 108 having a width of 4 ⁇ 10 ⁇ 4 cm arranged in a lattice shape is made of platinum (Pt) -based metal that makes ohmic contact with the p-type GaN layer 106.
  • No phosphor such as Y 3 Al 5 O 12 for providing white light was provided on the surface of the chip.
  • the forward voltage (Vf) when a forward current of 20 mA was passed through the square LED 10 having a side length of about 400 ⁇ m was 3.4V.
  • the peak wavelengths of light emission measured in the wavelength range of 350 nm to 700 nm when a forward current of 20 mA was passed were 365 nm, 385 nm, 440 nm, 500 nm, 550 nm, 600 nm, and 670 nm. Since a plurality of luminescences having different wavelengths were manifested in such a wide wavelength range, the luminescent color visually observed was white. In addition, the wavelength and intensity of each light emission constituting the multi-wavelength light emission hardly changed over time.
  • DESCRIPTION OF SYMBOLS 10 Light emitting element (LED), 101 ... Si substrate, 102 ... AlN layer, 103 ... AlGaN composition gradient layer, 104 ... n-type GaN layer, 105 ... Multiple quantum well structure light emitting layer, 105a ... GaN barrier layer, 105b ... GaInN Well layer, 106 ... p-type GaN layer, 107 ... n-type ohmic electrode, 108 ... p-type ohmic electrode, 109 ... pedestal (pad) electrode
  • LED Light emitting element

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

L'élément semi-conducteur au nitrure du groupe III selon l'invention comprend : un substrat ; et une couche semi-conductrice au nitrure du groupe III formée sur le substrat, dans laquelle sont ajoutées des impuretés d'atomes donneurs et des impuretés d'atomes accepteurs, et contenant du gallium (symbole de l'élément : Ga) comme son élément constitutif essentiel. L'élément semi-conducteur au nitrure du groupe III est caractérisé en ce que la couche semi-conductrice au nitrure du groupe III comprend une monocouche semi-conductrice au nitrure du groupe III multi-longueur d'onde qui contient une quantité stœchiométrique d'éléments du groupe III dont le gallium supérieure à celle des éléments du groupe V dont l'azote et qui émet simultanément au moins trois faisceaux de lumière en plus de l'émission latérale de bande et ayant des longueurs d'ondes différentes dans une zone dont les longueurs d'ondes sont supérieures à l'émission latérale de bande. Ainsi, un élément semi-conducteur, par exemple un DEL blanche, est produit facilement et avec une structure simple.
PCT/JP2011/072192 2010-10-19 2011-09-28 Elément semi-conducteur au nitrure du groupe iii, couche semi-conductrice au nitrure du groupe émettant dans des longueurs d'ondes multiples et procédé de formation d'une couche semi-conductrice au nitrure du groupe iii émettant dans des longueurs d'ondes multiples WO2012053331A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010234530A JP2012089651A (ja) 2010-10-19 2010-10-19 Ｉｉｉ族窒化物半導体素子、多波長発光ｉｉｉ族窒化物半導体層及び多波長発光ｉｉｉ族窒化物半導体層の形成方法
JP2010-234530 2010-10-19

Publications (1)

Publication Number Publication Date
WO2012053331A1 true WO2012053331A1 (fr) 2012-04-26

Family

ID=45975050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/072192 WO2012053331A1 (fr) 2010-10-19 2011-09-28 Elément semi-conducteur au nitrure du groupe iii, couche semi-conductrice au nitrure du groupe émettant dans des longueurs d'ondes multiples et procédé de formation d'une couche semi-conductrice au nitrure du groupe iii émettant dans des longueurs d'ondes multiples

Country Status (3)

Country Link
JP (1) JP2012089651A (fr)
TW (1) TW201222868A (fr)
WO (1) WO2012053331A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210143612A1 (en) * 2018-12-11 2021-05-13 Nuvoton Technology Corporation Japan Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystal

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2722870A1 (fr) * 2012-10-17 2014-04-23 Brolis Semiconductors Ltd. Hétérostructure semi-conducteur et procédé de fabrication associé
JP6260125B2 (ja) 2013-07-08 2018-01-17 富士通株式会社 分析装置、分析方法、成膜装置及び成膜方法
US9640389B2 (en) 2014-06-17 2017-05-02 Brolis Semiconductors Ltd. High-mobility semiconductor heterostructures
JP6356530B2 (ja) * 2014-08-08 2018-07-11 ウシオ電機株式会社 窒化物半導体発光素子及びその製造方法
CA3061993A1 (fr) 2017-05-22 2018-11-29 Brolis Sensor Technology, Uab Systeme sur puce de capteur laser iii-v/iv hybride accordable pour la surveillance en temps reel d'un niveau de concentration de constituant sanguin
EP4376236A2 (fr) 2018-02-02 2024-05-29 Brolis Sensor Technology, UAB Détermination de longueur d'onde pour lasers largement accordables et systèmes laser associés

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216165A (ja) * 1993-01-18 1994-08-05 New Japan Radio Co Ltd 半導体装置の製造方法
JPH0888408A (ja) * 1994-09-16 1996-04-02 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH0936429A (ja) * 1995-07-25 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09186362A (ja) * 1995-12-28 1997-07-15 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH1012969A (ja) * 1996-06-19 1998-01-16 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH10158099A (ja) * 1996-11-28 1998-06-16 Sumitomo Electric Ind Ltd 半導体結晶の製造方法及びそれに用いる装置
JPH11233825A (ja) * 1997-09-05 1999-08-27 Honnavalli R Vydyanath 高伝導性の半導体物質及びその製造方法
JP2002314128A (ja) * 2002-03-20 2002-10-25 Sumitomo Chem Co Ltd ３−５族化合物半導体
JP2003068656A (ja) * 2001-08-27 2003-03-07 Ulvac Japan Ltd プラズマ源、薄膜形成装置及び薄膜形成方法
WO2005093810A1 (fr) * 2004-03-26 2005-10-06 Sekisui Chemical Co., Ltd. Procédé et appareil de formation de film d’oxynitrure et de film de nitrure, film d’oxynitrure, film de nitrure et materiau de base
JP2005286319A (ja) * 2004-03-04 2005-10-13 Showa Denko Kk 窒化ガリウム系半導体素子
WO2007013257A1 (fr) * 2005-07-29 2007-02-01 Matsushita Electric Industrial Co., Ltd. Dispositif semi-conducteur au nitrure
WO2009041237A1 (fr) * 2007-09-27 2009-04-02 Showa Denko K.K. Élément semi-conducteur au nitrure iii émettant de la lumière
JP2009088562A (ja) * 2008-12-26 2009-04-23 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2009231745A (ja) * 2008-03-25 2009-10-08 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子、ｉｉｉ族窒化物半導体発光素子の製造方法、及びランプ
JP2010067792A (ja) * 2008-09-11 2010-03-25 Panasonic Corp 半導体発光素子
JP2010212493A (ja) * 2009-03-11 2010-09-24 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216165A (ja) * 1993-01-18 1994-08-05 New Japan Radio Co Ltd 半導体装置の製造方法
JPH0888408A (ja) * 1994-09-16 1996-04-02 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH0936429A (ja) * 1995-07-25 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09186362A (ja) * 1995-12-28 1997-07-15 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JPH1012969A (ja) * 1996-06-19 1998-01-16 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH10158099A (ja) * 1996-11-28 1998-06-16 Sumitomo Electric Ind Ltd 半導体結晶の製造方法及びそれに用いる装置
JPH11233825A (ja) * 1997-09-05 1999-08-27 Honnavalli R Vydyanath 高伝導性の半導体物質及びその製造方法
JP2003068656A (ja) * 2001-08-27 2003-03-07 Ulvac Japan Ltd プラズマ源、薄膜形成装置及び薄膜形成方法
JP2002314128A (ja) * 2002-03-20 2002-10-25 Sumitomo Chem Co Ltd ３−５族化合物半導体
JP2005286319A (ja) * 2004-03-04 2005-10-13 Showa Denko Kk 窒化ガリウム系半導体素子
WO2005093810A1 (fr) * 2004-03-26 2005-10-06 Sekisui Chemical Co., Ltd. Procédé et appareil de formation de film d’oxynitrure et de film de nitrure, film d’oxynitrure, film de nitrure et materiau de base
WO2007013257A1 (fr) * 2005-07-29 2007-02-01 Matsushita Electric Industrial Co., Ltd. Dispositif semi-conducteur au nitrure
WO2009041237A1 (fr) * 2007-09-27 2009-04-02 Showa Denko K.K. Élément semi-conducteur au nitrure iii émettant de la lumière
JP2009081379A (ja) * 2007-09-27 2009-04-16 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2009231745A (ja) * 2008-03-25 2009-10-08 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子、ｉｉｉ族窒化物半導体発光素子の製造方法、及びランプ
JP2010067792A (ja) * 2008-09-11 2010-03-25 Panasonic Corp 半導体発光素子
JP2009088562A (ja) * 2008-12-26 2009-04-23 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP2010212493A (ja) * 2009-03-11 2010-09-24 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210143612A1 (en) * 2018-12-11 2021-05-13 Nuvoton Technology Corporation Japan Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystal

Also Published As

Publication number Publication date
JP2012089651A (ja) 2012-05-10
TW201222868A (en) 2012-06-01

Similar Documents

Publication Publication Date Title
US7812366B1 (en) Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same
Kishino et al. InGaN/GaN nanocolumn LEDs emitting from blue to red
WO2012053331A1 (fr) Elément semi-conducteur au nitrure du groupe iii, couche semi-conductrice au nitrure du groupe émettant dans des longueurs d'ondes multiples et procédé de formation d'une couche semi-conductrice au nitrure du groupe iii émettant dans des longueurs d'ondes multiples
WO2009041237A1 (fr) Élément semi-conducteur au nitrure iii émettant de la lumière
CN109075226B (zh) Iii族氮化物层叠体及iii族氮化物发光元件
JP2006295132A (ja) 発光装置
JP5545269B2 (ja) Ｉｉｉ族窒化物半導体発光素子及びその製造方法
Lupan et al. Comparative study of the ZnO and Zn1− xCdxO nanorod emitters hydrothermally synthesized and electrodeposited on p-GaN
KR102099440B1 (ko) 발광 소자의 제조 방법
WO2012053332A1 (fr) Elément semi-conducteur au nitrure du groupe iii et couche semi-conductrice au nitrure du groupe iii émettant dans des longueurs d'ondes multiples
JP2011171431A (ja) 半導体発光装置及びその製造方法
JP4982259B2 (ja) Ｉｉｉ族窒化物化合物半導体発光素子の製造方法
Lee et al. Nonphosphor white light emitting diodes by mixed-source hydride vapor phase epitaxy
JP5263881B2 (ja) Ｉｉｉ族窒化物半導体発光素子
JP2010116621A (ja) ＺｎＯ系半導体層とその製造方法、ＺｎＯ系半導体発光素子、及びＺｎＯ系半導体素子
JP7484572B2 (ja) ｐ型ＩＩＩ族窒化物半導体の製造方法
US9076913B2 (en) Group iii nitride semiconductor light-emitting element
TWI816705B (zh) 半導體型螢光體
Feng et al. Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
JP2004200723A (ja) ３−５族化合物半導体の結晶性向上方法
JPH09129920A (ja) 発光素子用３−５族化合物半導体及び発光素子
WO2022261541A1 (fr) Débordement d'électrons de diodes électroluminescentes aigan à ultraviolet profond
TW202234720A (zh) 氮化物半導體發光元件及其製造方法
JP2007201145A (ja) ｎ型ＩＩＩ族窒化物系化合物半導体層の成長方法
JP2009088553A (ja) Ｉｉｉ族窒化物半導体層、発光層およびｉｉｉ族窒化物半導体発光素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11834171

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11834171

Country of ref document: EP

Kind code of ref document: A1