WO2012053307A1 - 電源装置 - Google Patents
電源装置 Download PDFInfo
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- WO2012053307A1 WO2012053307A1 PCT/JP2011/071420 JP2011071420W WO2012053307A1 WO 2012053307 A1 WO2012053307 A1 WO 2012053307A1 JP 2011071420 W JP2011071420 W JP 2011071420W WO 2012053307 A1 WO2012053307 A1 WO 2012053307A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/338—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement
- H02M3/3382—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement in a push-pull circuit arrangement
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- the present invention relates to a variable output type power supply device including a composite resonance type half-bridge converter.
- FIG. 14 shows a basic configuration of an output variable power supply device 50 including a composite resonance type half-bridge converter (LLC converter).
- FIG. 15 shows waveforms of signals and the like in each part of the power supply device 50.
- a complex resonance type half-bridge converter switching circuit
- rectifying diodes D53 and D54 are connected to the secondary windings Ns51 and Ns52 of the transformer 51, respectively.
- the drive signals Vg51 and Vg52 are alternately input to the gates of the switch elements Q51 and Q52 with a dead-off time (a period in which both the switch elements Q51 and Q52 are turned off) interposed therebetween.
- An alternating current flows through primary winding Np50.
- the voltage of the capacitor Ci is VCi. Since the resonance circuit composed of the inductor Lr and the capacitors Cv and Ci is connected to the primary winding Np50 of the transformer 51, the current flowing through the primary winding Np50 via the switch elements Q51 and Q52 is IQ51 and IQ52.
- the period ⁇ T is called a power non-transmission period.
- the voltage of the DC power supply 52 that is, the input voltage is VIN
- the voltage applied to the load 53 from the secondary windings Ns1 and Ns2 of the transformer 51 via the diodes D53 and D54 that is, the output voltage Vout.
- n is the turns ratio (step-down) of the transformer 51
- Lp is the excitation inductance of the transformer 51
- Lr is the leakage inductance of the transformer 51
- C is the capacitance of the series-connected capacitors for resonance
- ⁇ T is the power non-transmission period.
- the output voltage from the power supply device 50 can be changed by controlling the power non-transmission period ⁇ T.
- the timing of turning on / off the drive signals Vg51 and Vg52 applied to the gates of the switch elements Q51 and Q52, that is, the frequency (or period) of the pulse signal is changed. Good.
- the power supply device 50 is used as a switching power supply for various electric devices because it can control the output voltage with high efficiency while having a relatively simple circuit configuration.
- the frequency of the pulse signal must be greatly changed.
- the switch elements Q51 and Q52 are simultaneously turned on. As a result, the current flowing through the load 53 does not become zero, the condition of the zero volt switch collapses, and soft switching may not be realized.
- FIG. 16 shows a configuration of a power supply device 50 ′ including a composite resonance type half-bridge converter for controlling the output voltage in a wider range, which is proposed in, for example, the prior art document 1.
- FIG. 17 shows waveforms of signals and the like in each part of the power supply device 50 '. As shown in FIG. 16, switching elements Q53 and Q54 are connected in series to the diodes D53 and D54 on the secondary side of the transformer 51. The power supply device 50 ′ performs phase control by using switch elements Q 53 and Q 54 connected to the secondary side of the transformer 51.
- Vg51 to Vg54 indicate waveforms and timings of drive signals input to the gates of the switch elements Q51 to Q54, respectively.
- VQ51 to VQ54 indicate the voltages of the switch elements Q51 to Q54, respectively.
- the switch elements Q51 to Q54 are assumed to be switch elements such as MOSFETs, for example, and the MOSFET has a parasitic diode and a parasitic capacitance.
- the drive signals Vg51 to Vg54 correspond to drive signals Vg1, Vg2, Vg3a, and Vg4a described later, respectively.
- the drive frequency of the switching circuit on the primary side of the transformer 51 is constant, and the on / off timings of the switching elements Q53 and Q54 with respect to the on / off timings of the switching elements Q51 and Q52 on the primary side. Is shifted. Since the duty ratio of the voltage waveform generated on the secondary side of the transformer changes in accordance with the amount of timing deviation, output control can be performed over a wide range.
- the driving frequency of the switching circuit on the primary side of the transformer 51 is constant, and the loss due to the switching circuit hardly increases as compared with the power supply device 50 shown in FIG. 14.
- the loss due to the switch elements Q53 and Q54 connected to the rectifying diodes D53 and D53 on the secondary side of the transformer 51 increases.
- the losses due to the switching elements Q53 and Q54 are almost the same as the losses due to the rectifying diodes D53 and D53, the loss on the secondary side is simply doubled.
- the present invention provides a variable output type having a composite resonant half-bridge converter while maintaining a constant driving frequency of a switching circuit connected to a primary side of a transformer and without increasing or reducing a loss caused by a rectifying circuit on a secondary side.
- An object of the present invention is to provide a power supply apparatus.
- a power supply device including a composite resonance type half-bridge converter includes a transformer, a series circuit of two first switch elements connected between terminals of a DC power supply, and one of the first switch elements.
- An LC resonance circuit connected between both ends of the transformer and the primary winding of the transformer, and a bidirectional second switch element connected to the secondary winding of the transformer and having a rectifying action and a phase control action; And a control circuit for inputting a gate drive signal having a phase difference to the first switch element and the second switch element.
- a bidirectional switch having two gates in a series circuit (see FIG. 16) of a rectifier diode and a MOSFET provided on the secondary side of a transformer in a power supply device including a composite resonance type half-bridge converter. It is replaced with an element. Therefore, the number of parts on the secondary side of the transformer can be reduced as compared with the conventional one, and loss due to the switch element can be reduced.
- two-way switch element shown in FIG. It is a figure which shows the waveform of the drive signal input into each switch element of the said power supply device, Comprising: (a) is a waveform diagram at the time of utilizing a diode characteristic, (b) is in the case of performing the function similar to synchronous rectification. Waveform diagram.
- FIG. 13 is a diagram showing a modification of the gate drive circuit shown in FIG. 12.
- the figure which shows the signal waveform in each part of the power supply device shown in FIG. The figure which shows the structure of the other conventional output variable type power supply device.
- FIG. 1 shows a configuration of a power supply device 1 according to the present embodiment.
- a composite resonance type half-bridge converter switching circuit
- the DC power source 2 is connected to this switching circuit.
- second switch elements Q3 and Q4 are connected to the secondary winding Ns side of the transformer 5, respectively.
- the second switch element Q3 serves as the diode D53 and the switch element Q53 in the conventional example shown in FIG. 16, and the same effect as that of the synchronous rectifier circuit is obtained.
- the second switch element Q4 serves as both the diode D54 and the switch element Q54. Therefore, dual gate type switch elements having two gates are used as the second switch elements Q3 and Q4.
- a phase control signal synchronized with the gate signals Vg1 and Vg2 of the first switch elements Q1 and Q2 is input to one gate (first gate) of the second switch elements Q3 and Q4, and the other gate (second gate). Is controlled so as to obtain the same effect as synchronous rectification.
- the load 3 is connected to the second switch elements Q3 and Q4.
- the second switch elements Q3 and Q4 are switch elements that do not have a parasitic diode.
- the second switch elements Q3 and Q4 each have two gates and are called dual gate type switch elements.
- FIG. 3 shows an equivalent circuit of the second switch elements Q3 and Q4.
- the second switch elements Q3 and Q4 have a structure in which two MOSFETs Q11 and Q12 (on the equivalent circuit) are connected so that the directions of the parasitic diodes D11 and D12 are reversed. Although parasitic diodes D11 and D12 do not exist structurally, the same reverse direction characteristics as the diode can be obtained regardless of the gate bias. C11 and C12 indicate parasitic capacitances.
- FIG. 4 shows one of the equivalent circuits of the bidirectional second switch elements Q2 and Q3 shown in FIG. 3 and its voltage / current characteristics.
- the forward characteristic of the switch element shows the transistor characteristic
- the reverse characteristic shows the diode characteristic regardless of the gate bias.
- the forward bias voltage of the gate is higher, the diode characteristics tend to shift to the right side in the figure.
- the on-voltage is reduced, and an effect such as synchronous rectification can be obtained.
- FIGS. 5A and 5B are input to the first switch elements Q1 and Q2 and the second switch elements Q3 and Q4, respectively.
- FIG. 5A shows an example in which the diode characteristics obtained by always maintaining the low level without applying a bias to the second gates of the second switch elements Q3 and Q4 are utilized.
- the on-voltage Vf is high as a diode characteristic, since a gate bias circuit is not required, a simple circuit configuration is possible.
- the drive signals Vg3a and Vg4a are phase control signals (first gate drive signals) synchronized with the gate signals Vg1 and Vg2 of the first switch elements Q1 and Q2, and the drive signals Vg3b and Vg4b are synchronous rectification.
- Drive signal (second gate drive signal).
- the drive signals Vg1 and Vg2 have the same waveform as in the conventional example shown in FIG. 15, and are alternately output with a dead-off time interposed therebetween.
- the first switch elements Q1 and Q2 are alternately turned on / off, and an alternating current flows through the primary winding Np of the transformer 5.
- the drive signals Vg1, Vg2, Vg3a, Vg3b, Vg4a, and Vg4b will be described as being output from the control circuit 6. However, when all of these are output from the control circuit 6, as will be described later. Is not limited.
- the transformer is configured so that these rectified drive signals Vg1, Vg2, Vg3a, Vg3b, Vg4a, and Vg4b are generated on the secondary side of the transformer. A pulse signal having a predetermined frequency is input to the primary side.
- connection between the control circuit 6, the first switch elements Q1 and Q2, and the gates of the second switch elements Q3 and Q4 is omitted.
- the second switch elements Q3 and Q4 conduct only while the first gate drive signals Vg3a and Vg4a for phase control are input. Meanwhile, if the second gate drive signals Vg3b and Vg4b are not input, the diode characteristics of the second switch elements Q3 and Q4 are high because the on-voltage is high, and the loss is large. I can't say that. Therefore, if the second gate drive signals Vg3b and Vg4b are temporarily input while the first gate drive signals Vg3a and Vg4a are being input, the loss due to the diode characteristics can be reduced by the same effect as the synchronous rectification. it can.
- the period of the second gate drive signals Vg3b and Vg4b is the same as the period of the first gate drive signals Vg3a and Vg4a, the loss due to the parasitic diode D11 can be reduced to the maximum.
- the gate since the gate is forward-biased, there is a possibility that the output is short-circuited in the reverse direction, and the reverse current is always generated during the period of the first gate drive signals Vg3a and Vg4a. There is a flowing period. Therefore, in a period in which a reverse current is expected to flow, it is necessary to stop the synchronous rectification operation and return to the original diode function. Therefore, it is necessary to set the widths of the second gate drive signals Vg3b and Vg4b to be shorter than the widths of the first gate drive signals Vg3a and Vg4a.
- the output can be made variable by changing the phase difference ⁇ between the first gate drive signals Vg3a and Vg4a and the drive signals Vg1 and Vg2. Further, the rise of the second gate signals Vg3b and Vg4b is delayed by ⁇ t1 with respect to the rise of the first gate drive signals Vg3a and Vg4a, and the fall of the second gate signals Vg3b and Vg4b is delayed of the first gate drive signals Vg3a and Vg4a. By advancing by ⁇ t2 with respect to the falling, the secondary short-circuit phenomenon due to synchronous rectification can be avoided. The second gate signals Vg3b and Vg4b fall on the condition that they fall earlier than the drive signals Vg1 and Vg2.
- FIG. 2 shows a configuration example of a gate drive circuit for inputting drive signals to the two gates G1 and G2 of the second switch elements Q3 and Q4.
- the first gate driving circuit 21 and the second gate driving circuit 22 having the same independent configuration with respect to the first gate G1 and the second gate G2 of the second switching element Q3 or Q4 are provided. Each is connected.
- the control circuit 6 inputs the first gate drive signal Vg3a or Vg4a to the input terminal 21a of the first gate drive circuit 21 and the second gate input to the input terminal 22a of the second gate drive circuit 22.
- the drive signal Vg3b or Vg4b is input.
- a pulse having a predetermined frequency that actually generates the gate drive signals Vg3a to Vg4b is used.
- a signal train is input.
- a pulse signal train for generating the gate drive signals Vg3a to Vg4b is referred to as a drive pulse signal.
- 6 and 7 show a configuration of a bidirectional switch element 300 having a lateral transistor structure using GaN / AlGaN.
- 6 is a plan view showing the configuration of the bidirectional switch element 300
- FIG. 7 is a cross-sectional view taken along the line AA.
- This bidirectional switch element 300 is called a dual gate type because two gates G1 and G2 are provided between two electrodes D1 and D2.
- the bidirectional switch device 300 having a horizontal dual gate transistor structure is a structure that realizes a bidirectional device with a small loss, with one portion maintaining the withstand voltage. That is, the drain electrodes D1 and D2 are each formed to reach the GaN layer, and the gate electrodes G1 and G2 are respectively formed on the AlGaN layer. In a state where no voltage is applied to the gate electrodes G1 and G2, a blank zone of electrons is generated in the two-dimensional electron gas layer generated at the AlGaN / GaN heterointerface immediately below the gate electrodes G1 and G2, and no current flows.
- the drain electrode D1 and the gate electrode G1, and the drain electrode D2 and the gate electrode G2 may overlap via the insulating layer In.
- the element having this configuration needs to be controlled with reference to the voltages of the drain electrodes D1 and D2, and it is necessary to input drive signals to the two gate electrodes G1 and G2, respectively (for this reason, it is called a dual gate transistor structure).
- the bidirectional switch element 300 having a lateral transistor structure using GaN / AlGaN has a feature that the conduction resistance is smaller than that of the MOSFET and the loss when the switch element is conducted is very small.
- FIG. 8 shows another configuration example of the gate drive circuit.
- the first gate drive having the same independent configuration with respect to the first gate G1 and the second gate G2 of the second switch element Q3 or Q4.
- the circuit 21 and the second gate drive circuit 22 are connected.
- the input terminal 22 a of the second gate drive circuit 22 is connected to the input terminal 21 a of the first gate drive circuit 21 via the rising / falling timing circuit 23.
- the control circuit 6 inputs a drive pulse signal that generates the first drive signal Vg3a or Vg4a only to the input terminal 21a of the first gate drive circuit 21.
- the first drive signal Vg3a or Vg4a is input to the first gate G1 of the second switch element Q3 or Q4.
- the drive pulse signal delayed by the rise / fall timing adjustment circuit 23 is input to the input terminal 22 a of the second gate drive circuit 22.
- the second gate drive signal Vg3b or Vg4b whose rise / fall timing is adjusted with respect to the first gate drive signal Vg3a or Vg4a is input to the second gate G2 of the second switch elements Q3 and Q4.
- FIG. 9 shows still another configuration example of the gate drive circuit.
- a first gate drive circuit 21 and a second gate drive circuit 22 'having different configurations are connected to the first gate G1 and the second gate G2 of the second switch element Q3 or Q4, respectively.
- the first gate drive circuit 21 has substantially the same configuration as the first gate drive circuit 21 shown in FIG. 2 or FIG.
- the control circuit 6 inputs a drive pulse signal that generates the first drive signal Vg3a or Vg4a only to the input terminal 21a of the first gate drive circuit 21. Accordingly, the first drive signal Vg3a or Vg4a is input to the first gate G1 of the second switch elements Q3 and Q4.
- the second gate drive circuit 22 ′ includes a voltage detection circuit 24 that detects the voltage of the first gate drive signal Vg3a or Vg4a, and the control circuit 6 has a predetermined frequency with respect to the input terminal 22a of the gate drive circuit 22 ′.
- the carrier wave (electric power) which is a pulse signal train is input.
- the gate driver 22c is turned on.
- the second gate drive signal Vg3b or Vg4b generated on the secondary side of the transformer 22b is input to the gate G2.
- the time required for this voltage drop corresponds to the sum of the phase difference ⁇ and ⁇ t1, and further, ⁇ t2 can be substantially set by increasing the accuracy of the voltage detection circuit 24 for detecting the voltage drop.
- FIG. 10 shows a modification of the gate drive circuit shown in FIG.
- the control circuit 6 inputs a drive pulse signal that generates the first drive signal Vg3a or Vg4a only to the input terminal 21a of the first gate drive circuit 21. Accordingly, the first drive signal Vg3a or Vg4a is input to the first gate G1 of the second switch element Q3 or Q4. Further, when the voltage detection circuit 24 detects that the voltage of the first gate drive signal Vg3a or Vg4a shows a predetermined voltage drop, the output of the gate driver 22c becomes high level.
- the second gate drive signal Vg3b or Vg4b generated on the secondary side of the transformer 22b of the second gate drive circuit 22 ' is input to the second gate G2.
- the control circuit 6 does not need to input a carrier wave (power) that is a pulse signal having a predetermined frequency to the second gate drive circuit 22 '.
- FIG. 11 shows another configuration example of the gate drive circuit.
- a snubber circuit 25 composed of a capacitor, a resistor and a diode is connected between the terminals of the second switch element Q3 or Q4.
- a first gate drive circuit 21 similar to the above-described configuration examples is connected to the first gate G1 of the second switch elements Q3 and Q4.
- the control circuit 6 inputs a drive pulse signal that generates the first drive signal Vg3a or Vg4a only to the input terminal 21a of the first gate drive circuit 21. Accordingly, the first drive signal Vg3a or Vg4a is input to the first gate G1 of the second switch element Q3 or Q4.
- Second gate drive circuit 22 ′′ Connected to the second gate G2 of the second switch element Q3 or Q4 is a second gate drive circuit 22 ′′ for generating a drive signal for synchronization using electric power obtained from the snubber circuit 25.
- Second gate drive The circuit 22 ′′ includes a voltage detection circuit 24 that detects the voltage of the first gate drive signal Vg3a or Vg4a. When the voltage detection circuit 24 detects a predetermined voltage drop in the voltage of the first gate drive signal Vg3a or Vg4a, the output of the gate driver 22c becomes high level, and the power obtained from the snubber circuit 25 is used for synchronization.
- the second drive signal is input to the second gate G2.
- FIG. 12 shows another configuration example of the gate drive circuit.
- the primary winding of the transformer 26 is connected in series with the second switch element Q3 or Q4, and the secondary winding of the transformer 26 is the second gate G2 of the second switch element Q3 or Q4. It is connected to the.
- the (first) gate drive circuit 21 similar to the respective configuration examples is connected to the first gate G1 of the second switch elements Q3 and Q4.
- the control circuit 6 inputs a drive pulse signal that generates the first gate drive signal Vg3a or Vg4a only to the input terminal 21a of the gate drive circuit 21. Accordingly, the first drive signal Vg3a or Vg4a is input to the first gate G1 of the second switch element Q3 or Q4.
- the second gate drive signal for direct synchronization is generated and inputted by the current flowing through the transformer 26 connected to the secondary side of the power supply device 1.
- FIG. 13 shows a modification of the gate drive circuit shown in FIG.
- a waveform shaping circuit 27 is connected between the transformer 26 and the second gate G2 of the second switch element Q3 or Q4.
- the waveform of the second gate drive signal input to the second gate G2 of the second switch element Q3 or Q4 is a substantially arc shape or a substantially elliptic arc shape, but in the modification shown in FIG.
- the waveform of the second gate drive signal can be rectangular.
- the rectifier diode and MOSFET series circuit (see FIG. 16) provided on the secondary side of the transformer has two gates. It is replaced with a bidirectional switch element. Therefore, the number of parts on the secondary side of the transformer can be reduced as compared with the conventional one, and loss due to the switch element can be reduced.
- the first gate drive signal input to the first gate is variably driven by providing a phase difference ⁇ with respect to the drive signal of the switch element constituting the bridge circuit, and the second gate input to the second gate. The drive signal rises at a later timing than the first gate drive signal input to the first gate, and falls at an earlier timing.
- the power supply device provided with the composite resonance type half-bridge converter according to the present invention is not limited to the configuration of the above-described embodiment, and at least two first devices connected between the transformer and the terminals of the DC power supply.
- a bidirectional second switch element having a phase control action and a control circuit for inputting a gate drive signal having a phase difference to the first switch element and the second switch element may be provided.
- the second switch element has two channels in a forward direction and a reverse direction with respect to a current flowing in the secondary winding of the transformer, and a first gate and a second gate corresponding thereto, and the control
- the circuit inputs the first gate drive signal having a predetermined phase difference with respect to the drive signal input to the first switch element to the forward channel to realize the phase control action, and the reverse direction
- the second gate drive signal is input to these channels to realize synchronous rectification.
- the control circuit delays the timing of the rise of the second gate drive signal with respect to the rise of the first gate drive signal, and causes the fall of the second gate drive signal to fall of the first gate drive signal. It is preferable to make the timing earlier.
- the fall of the second gate drive signal is earlier than the fall of the drive signal input to the first switch element.
- control circuit includes two second switch elements corresponding to the two first switch elements. It is preferable to drive alternately.
- the second switch element is preferably a switch element having a lateral transistor structure using GaN / AlGaN.
- the control circuit includes an independent first gate drive circuit and a second gate drive circuit connected to the first gate and the second gate of the second switch element, respectively, and the control circuit includes the first gate drive circuit and the second gate drive circuit.
- a first driving pulse signal for generating the first gate driving signal is input to one gate driving circuit, and the second gate driving signal having a waveform different from that of the first gate driving signal is input to the second gate driving circuit. It is preferable to input a second driving pulse signal to be generated.
- control circuit includes independent first gate driving circuit and second gate driving circuit connected to the first gate and the second gate of the second switch element, respectively, and the control circuit includes the first gate driving circuit and the second gate driving circuit.
- a driving pulse signal for generating the first gate driving signal is input to one gate driving circuit, and the second gate driving circuit is configured to pass the phase adjustment circuit to generate the second gate driving signal. It is preferable to input a driving pulse signal.
- control circuit includes independent first gate driving circuit and second gate driving circuit connected to the first gate and the second gate of the second switch element, respectively, and the control circuit includes the first gate driving circuit and the second gate driving circuit.
- a driving pulse signal for generating the first gate driving signal is input to one gate driving circuit, and only driving power is input to the second gate driving circuit, and the second gate driving circuit receives the first gate driving signal.
- a voltage detection circuit for detecting the voltage of the first gate drive signal is provided, and the second gate drive signal is generated using the drive power when the voltage of the first gate drive signal shows a predetermined voltage drop.
- the control circuit includes a first gate drive circuit and a second gate drive circuit connected to the first gate and the second gate of the second switch element, respectively, and the first switch of the second switch element.
- a first gate driving circuit and a second gate driving circuit are connected to the gate and the second gate, respectively, and the first gate driving circuit and the second gate driving circuit are each insulated by a transformer, and the first gate
- the primary side of the transformer of the drive circuit and the primary side of the transformer of the second gate drive circuit are shared, and the control circuit generates a drive pulse signal for generating the first gate drive signal only in the first gate drive circuit
- the second gate drive circuit includes a voltage detection circuit that detects the voltage of the first gate drive signal, and the voltage of the first gate drive signal is When showing the constant voltage drop, to generate the second gate driving signal by using the electric power generated in the secondary side of the transformer is preferred.
- the control circuit includes: a snubber circuit connected between terminals of the second switch element; a first gate driving circuit connected to the first gate and the second gate of the second switch element; The control circuit receives a drive pulse signal for generating the first gate drive signal only to an input terminal of the first gate drive circuit, and the second gate of the second switch element. Is connected to a second gate driving circuit for generating the second gate driving signal using electric power obtained from the snubber circuit, and the second gate driving circuit detects a voltage of the first gate driving signal.
- a voltage detection circuit wherein the voltage detection circuit uses the power obtained from the snubber circuit when the voltage of the first gate drive signal indicates a predetermined voltage drop. It is preferable to generate the second gate drive signals.
- a primary winding of the transformer is connected in series with the second switch element, a gate drive circuit 21 is connected to the first gate of the second switch element, and the secondary winding of the transformer is the second winding.
- the control circuit is connected to the second gate of the switch element, and the control circuit inputs a drive pulse signal for generating the first gate drive signal only to the gate drive circuit, and directly applies the second gate by the current flowing through the transformer.
- a drive signal is preferably generated.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
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Abstract
Description
Claims (12)
- 複合共振型ハーフブリッジコンバータを備えた出力可変の電源装置であって、
前記複合共振型ハーフブリッジコンバータは、
トランスと、
直流電源の端子間に接続された2つの第1スイッチ素子の直列回路と、
一方の前記第1スイッチ素子の両端部と前記トランスの一次巻き線との間に接続されたLC共振回路と、
前記トランスの二次巻き線に接続され、整流作用と位相制御作用を有する双方向性の第2スイッチ素子と、
前記第1スイッチ素子及び前記第2スイッチ素子に位相差を有するゲート駆動信号を入力する制御回路を有し、
前記トランスの二次巻き線出力を可変とすることを特徴とする電源装置。 - 前記第2スイッチ素子は、前記トランスの二次巻き線に流れる電流に対して順方向及び逆方向の2つのチャンネル及びそれに対応する第1ゲート及び第2ゲートを有し、
前記制御回路は、前記順方向のチャンネルに、前記第1スイッチ素子に入力される駆動信号に対して所定の位相差を有する第1ゲート駆動信号を入力して前記位相制御作用を実現し、前記逆方向のチャンネルに第2ゲート駆動信号を入力して同期整流を実現させることを特徴とする請求項1に記載の電源装置。 - 前記制御回路は、前記第2ゲート駆動信号の立上がりを前記第1ゲート駆動信号の立上がりに対してタイミングを遅らせ、前記第2ゲート駆動信号の立下がりを前記第1ゲート駆動信号の立下がりに対してタイミングを早くすることを特徴とする請求項2に記載の電源装置。
- 前記第2ゲート駆動信号の立下がりは、前記第1スイッチ素子に入力される駆動信号の立下がりよりも早いことを特徴とする請求項3に記載の電源装置。
- 前記第2スイッチ素子は2つの前記第1スイッチ素子に対応して2つ設けられており、前記制御回路は、2つの前記第1スイッチ素子に対応して2つの前記第2スイッチ素子を交互に駆動することを特徴とする請求項1乃至請求項4のいずれか一項に記載の電源装置。
- 前記第2スイッチ素子は、GaN/AlGaNを用いた横型トランジスタ構造を有するスイッチ素子であることを特徴とする請求項1乃至請求項5のいずれか一項に記載の電源装置。
- 前記制御回路は、前記第2スイッチ素子の前記第1ゲート及び前記第2ゲートにそれぞれ接続された独立した第1ゲート駆動回路及び第2ゲート駆動回路を含み、
前記制御回路は、前記第1ゲート駆動回路に、前記第1ゲート駆動信号を発生させる第1駆動パルス信号を入力し、前記第2ゲート駆動回路に、前記第1ゲート駆動信号とは波形の異なる前記第2ゲート駆動信号を発生させる第2駆動パルス信号を入力することを特徴とする請求項2乃至請求項6のいずれか一項に記載の電源装置。 - 前記制御回路は、前記第2スイッチ素子の前記第1ゲート及び前記第2ゲートにそれぞれ接続された独立した第1ゲート駆動回路及び第2ゲート駆動回路を含み、
前記制御回路は、前記第1ゲート駆動回路に、前記第1ゲート駆動信号を発生させる駆動パルス信号を入力すると共に、前記第2ゲート駆動回路に、前記第2ゲート駆動信号を発生させるために、位相調整回路を介して前記駆動パルス信号を入力することを特徴とする請求項2乃至請求項6のいずれか一項に記載の電源装置。 - 前記制御回路は、前記第2スイッチ素子の前記第1ゲート及び前記第2ゲートにそれぞれ接続された独立した第1ゲート駆動回路及び第2ゲート駆動回路を含み、
前記制御回路は、前記第1ゲート駆動回路に、前記第1ゲート駆動信号を発生させる駆動パルス信号を入力し、前記第2ゲート駆動回路に駆動電力のみを入力し、
前記第2ゲート駆動回路は、前記第1ゲート駆動信号の電圧を検出する電圧検出回路を備え、前記第1ゲート駆動信号の電圧が所定の電圧降下を示したときに、前記駆動電力を用いて第2ゲート駆動信号を発生させることを特徴とする請求項2乃至請求項6のいずれか一項に記載の電源装置。 - 前記制御回路は、前記第2スイッチ素子の前記第1ゲート及び前記第2ゲートにそれぞれ接続された第1ゲート駆動回路及び第2ゲート駆動回路を含み、
前記第1ゲート駆動回路及び前記第2ゲート駆動回路は、それぞれトランスで絶縁され、前記第1ゲート駆動回路のトランスの一次側と前記第2ゲート駆動回路のトランスの一次側が共通化されており、
前記制御回路は、前記第1ゲート駆動回路にのみ前記第1ゲート駆動信号を発生させる駆動パルス信号を入力し、
前記第2ゲート駆動回路は、前記第1ゲート駆動信号の電圧を検出する電圧検出回路を備え、前記第1ゲート駆動信号の電圧が所定の電圧降下を示したときに、前記トランスの二次側に発生した電力を用いて第2ゲート駆動信号を発生させることを特徴とする請求項2乃至請求項6のいずれか一項に記載の電源装置。 - 前記制御回路は、前記第2スイッチ素子の端子間に接続されたスナバ回路と、前記第2スイッチ素子の前記第1ゲート及び前記第2ゲートにそれぞれ接続された第1ゲート駆動回路及び第2ゲート駆動回路を含み、
前記制御回路は、前記第1ゲート駆動回路の入力端子に対してのみ前記第1ゲート駆動信号を発生させる駆動パルス信号を入力し、
前記第2スイッチ素子の第2ゲートには、前記スナバ回路から得られる電力を用いて前記第2ゲート駆動信号を発生させる第2ゲート駆動回路が接続され、
前記第2ゲート駆動回路は、前記第1ゲート駆動信号の電圧を検出する電圧検出回路を備え、前記電圧検出回路が、前記第1ゲート駆動信号の電圧が所定の電圧降下を示したときに、前記スナバ回路から得られた電力を用いて前記第2ゲート駆動信号を発生させることを特徴とする請求項2乃至請求項6のいずれか一項に記載の電源装置。 - 前記第2スイッチ素子と直列にトランスの一次巻き線が接続され、
前記第2スイッチ素子の第1ゲートには、ゲート駆動回路が接続され、
前記トランスの二次巻き線が前記第2スイッチ素子の第2ゲートに接続され、
前記制御回路は、前記ゲート駆動回路にのみ、前記第1ゲート駆動信号を発生させる駆動パルス信号を入力し、
前記トランスに流れる電流によって、直接前記第2ゲート駆動信号が発生されることを特徴とする請求項2乃至請求項6のいずれか一項に記載の電源装置。
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CN201180050266.1A CN103168414B (zh) | 2010-10-19 | 2011-09-21 | 电源装置 |
JP2012539648A JP5652969B2 (ja) | 2010-10-19 | 2011-09-21 | 電源装置 |
EP11834149.4A EP2632039A4 (en) | 2010-10-19 | 2011-09-21 | Power supply apparatus |
US13/823,339 US9184662B2 (en) | 2010-10-19 | 2011-09-21 | Electric power supply apparatus |
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EP (1) | EP2632039A4 (ja) |
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US20130170252A1 (en) | 2013-07-04 |
EP2632039A1 (en) | 2013-08-28 |
US9184662B2 (en) | 2015-11-10 |
JP5652969B2 (ja) | 2015-01-14 |
EP2632039A4 (en) | 2017-12-13 |
CN103168414B (zh) | 2016-03-02 |
JPWO2012053307A1 (ja) | 2014-02-24 |
CN103168414A (zh) | 2013-06-19 |
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