WO2012046932A1 - 태양전지 및 이의 제조방법 - Google Patents

태양전지 및 이의 제조방법 Download PDF

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Publication number
WO2012046932A1
WO2012046932A1 PCT/KR2011/003113 KR2011003113W WO2012046932A1 WO 2012046932 A1 WO2012046932 A1 WO 2012046932A1 KR 2011003113 W KR2011003113 W KR 2011003113W WO 2012046932 A1 WO2012046932 A1 WO 2012046932A1
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WIPO (PCT)
Prior art keywords
layer
light absorbing
solar cell
absorbing layer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/KR2011/003113
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English (en)
French (fr)
Korean (ko)
Inventor
이진우
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to JP2013532697A priority Critical patent/JP5784129B2/ja
Priority to EP11830818A priority patent/EP2523223A1/en
Priority to CN2011800411766A priority patent/CN103081122A/zh
Priority to US13/640,390 priority patent/US20130025675A1/en
Publication of WO2012046932A1 publication Critical patent/WO2012046932A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the embodiment relates to a solar cell and a method of manufacturing the same.
  • a CIGS solar cell which is a pn heterojunction device having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like is widely used.
  • the embodiment provides a solar cell having a high light absorption and a method of manufacturing the same.
  • Solar cell includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; And a window layer disposed on the light absorbing layer, wherein the window layer comprises: a base layer disposed on the light absorbing layer; And an anti-reflection pattern disposed on the base layer, wherein the anti-reflection pattern has an upper surface; And an inclined surface extending in a direction inclined from the upper surface.
  • Solar cell includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; And a window layer disposed on the light absorbing layer, wherein the window layer is formed on an upper surface thereof, extends in a first direction, and is spaced apart from each other; And a plurality of second grooves extending in a second direction crossing the first direction and spaced apart from each other.
  • a method of manufacturing a solar cell includes forming a back electrode layer on a substrate; Forming a light absorbing layer on the back electrode layer; Forming a window layer on the light absorbing layer; Forming a mask pattern on the window layer; And etching the window layer using the mask pattern as an etching mask.
  • the solar cell according to the embodiment may receive more light by using an antireflection pattern. That is, the antireflection pattern reduces light reflected by the window layer and increases light incident on the light absorbing layer.
  • the antireflective pattern includes a flat top surface and an inclined surface. Therefore, the area of the upper surface and the inclined surface of the anti-reflection pattern can be appropriately adjusted. That is, the area of the upper surface and the inclined surface may be adjusted so that the antireflection pattern has an optimal incident rate, and the angle of the inclined surface may be adjusted.
  • the solar cell according to the embodiment may have improved optical characteristics and may have improved photoelectric conversion efficiency.
  • FIG. 1 is a perspective view illustrating a window layer of a solar cell according to an embodiment.
  • FIG. 2 is a cross-sectional view illustrating a cross section of a solar cell according to an embodiment.
  • 3 is a plan view illustrating an antireflection pattern.
  • 3 to 7 are views illustrating a process of forming a solar cell according to an embodiment.
  • each substrate, layer, film, or electrode is described as being formed “on” or “under” of each substrate, layer, film, or electrode, etc.
  • "On” and “under” include both “directly” or “indirectly” formed through other components.
  • the criteria for the top or bottom of each component will be described with reference to the drawings. The size of each component in the drawings may be exaggerated for description, and does not mean a size that is actually applied.
  • 1 is a perspective view illustrating a window layer of a solar cell according to an embodiment.
  • 2 is a cross-sectional view illustrating a cross section of a solar cell according to an embodiment.
  • 3 is a plan view illustrating an antireflection pattern.
  • the solar cell includes a support substrate 100, a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, and a window layer 600. .
  • the support substrate 100 has a plate shape and supports the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, and the window layer 600.
  • the support substrate 100 may be an insulator.
  • the support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate.
  • the support substrate 100 may be a soda lime glass substrate.
  • the support substrate 100 may be transparent.
  • the support substrate 100 may be rigid or flexible.
  • the back electrode layer 200 is disposed on the support substrate 100.
  • the back electrode layer 200 is a conductive layer.
  • Examples of the material used for the back electrode layer 200 include a metal such as molybdenum (Mo).
  • the back electrode layer 200 may include two or more layers.
  • each of the layers may be formed of the same metal, or may be formed of different metals.
  • the light absorbing layer 300 is disposed on the back electrode layer 200.
  • the light absorbing layer 300 includes an I-III-VI group compound.
  • the light absorbing layer 300 may be formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) crystal structure, copper-indium-selenide-based, or copper-gallium-selenide It may have a system crystal structure.
  • the energy band gap of the light absorbing layer 300 may be about 1 eV to 1.8 eV.
  • the buffer layer 400 is disposed on the light absorbing layer 300.
  • the buffer layer 400 is in direct contact with the light absorbing layer 300.
  • the buffer layer 400 includes cadmium sulfide.
  • the energy band gap of the buffer layer 400 may be about 1.9 eV to about 2.3 eV.
  • the high resistance buffer layer 500 is disposed on the buffer layer 400.
  • the high resistance buffer layer 500 includes zinc oxide (i-ZnO) that is not doped with impurities.
  • the energy band gap of the high resistance buffer layer 500 may be about 3.1 eV to 3.3 eV.
  • the window layer 600 is disposed on the light absorbing layer 300. In more detail, the window layer 600 is disposed on the high resistance buffer layer 500.
  • the window layer 600 is transparent and is a conductive layer. Examples of the material used as the window layer 600 may include zinc oxide doped with aluminum.
  • the window layer 600 includes a base layer 610 and an antireflection pattern 620.
  • the base layer 610 is disposed on the light absorbing layer 300. In more detail, the base layer 610 is disposed on the high resistance buffer layer 500. The base layer 610 may cover the high resistance buffer layer 500 as a whole. The thickness of the base layer 610 may be greater than 1/2 of the thickness of the window layer 600.
  • the antireflection pattern 620 is disposed on the base layer 610.
  • the anti-reflection pattern 620 is integrally formed with the base layer 610.
  • the height of the anti-reflection pattern 620 may be smaller than 1/2 of the thickness of the window layer 600. That is, the height H of the anti-reflection pattern 620 may be smaller than the thickness of the base layer 610.
  • the antireflection pattern 620 is a protrusion pattern. That is, the anti-reflection pattern 620 includes a plurality of protrusions 602 protruding from the base layer 610.
  • Each protrusion 602 includes an upper surface 621 and a plurality of inclined surfaces 622.
  • each protrusion 602 may include an upper surface 621 and four inclined surfaces 622.
  • each protrusion 602 extends in the same direction as the upper surface of the light absorbing layer 300. That is, the top surface 621 of each protrusion 602 may be substantially parallel to the top surface of the light absorbing layer 300. In addition, the top surface 621 of each protrusion 602 extends in the same direction as the top surface of the support substrate 100, the top surface of the back electrode layer 200, and the top surface of the high resistance buffer layer 500.
  • Each of the upper surfaces 621 of the protrusion 602 may have a polygonal shape.
  • the top surface 621 of each protrusion 602 may have a rectangular shape.
  • the top surface 621 of each protrusion 602 may have a rectangular shape.
  • the top surface 621 of each protrusion 602 may have a square.
  • each protrusion 602 extend downward from the upper surface 621.
  • the inclined surfaces 622 of each protrusion 602 extend from the top surface 621 toward the base layer 610. That is, the inclined surfaces 622 are inclined with respect to the upper surface 621.
  • the inclined surfaces 622 may be, for example, a first inclined surface 622a, a second inclined surface 622b, a third inclined surface 622c, and a fourth inclined surface 622d.
  • the second inclined surface 622b is adjacent to the first inclined surface 622a and the third inclined surface 622c
  • the third inclined surface 622c is the second inclined surface 622b and the fourth inclined surface ( 622d).
  • the fourth inclined surface 622d is adjacent to the first inclined surface 622a and the third inclined surface 622c.
  • the first inclined surface 622a and the third inclined surface 622c face each other
  • the second inclined surface 622b and the fourth inclined surface 622d face each other.
  • the angle ⁇ of the inclined surfaces 622 with respect to the direction perpendicular to the upper surface 621 of each protrusion 602 may satisfy the following equation.
  • L is a distance between the upper surface 621 of the protrusions 602 adjacent to each other
  • T is the thickness of the window layer 600.
  • the protrusions 602 may have a horn shape. In more detail, the protrusions 602 may have a polygonal horn shape. In more detail, the protrusions 602 may have a square horn shape.
  • the width W of the top surface 621 of each protrusion 602 may be about 0.5 ⁇ m to about 1.5 ⁇ m, and the distance L between the top surfaces 621 of each protrusion 602 is about 0.5 ⁇ m. To about 4 ⁇ m.
  • the height (H) of the anti-reflection pattern may be about 0.5 ⁇ m to about 1 ⁇ m.
  • the anti-reflection pattern 620 has been described as the protrusion pattern, it may be differently described as the groove pattern 323. That is, the anti-reflection pattern 620 may be a groove pattern 323 formed by partially etching the window layer 600.
  • the groove pattern 323 includes a plurality of first grooves 323a extending in a first direction and a plurality of second grooves 323b extending in a second direction crossing the first direction.
  • the first grooves 323a and the second grooves 323b cross each other.
  • the first grooves 323a and the second grooves 323b have a mesh shape and cross each other.
  • first grooves 323a are spaced apart from each other.
  • the first grooves 323a include a first inner side surface and a second inner side surface which are inclined with respect to the upper surface of the light absorbing layer 300.
  • the first inner side surface and the second inner side surface may meet each other. That is, the cross sections of the first grooves 323a may have a V shape.
  • the first inner side surface and the second inner side surface are substantially the same as the second inclined surface 622b and the fourth inclined surface 622d.
  • the second grooves 323b are spaced apart from each other.
  • the second grooves 323b include a third inner side surface and a fourth inner side surface which are inclined with respect to the upper surface of the light absorbing layer 300.
  • the third inner side surface and the fourth inner side surface may meet each other. That is, the cross-sections of the first grooves 323a and the second grooves 323b may have a V shape.
  • the third inner side surface and the fourth inner side surface are substantially the same as the first inclined surface 622a and the third inclined surface 622c.
  • the protrusions 602 are formed by the first grooves 323a and the second grooves 323b. Accordingly, the width of the inlet of the first grooves 323a and the second grooves 323b is equal to the distance between the upper surfaces 621 of the protrusions 602. In addition, the depths of the first grooves 323a and the second grooves 323b are equal to the height H of the protrusions 602.
  • the solar cell according to the embodiment may receive more light by using the anti-reflection pattern 620. That is, the anti-reflection pattern 620 reduces the light reflected from the window layer 600 and increases the light incident on the light absorbing layer 300.
  • the areas of the upper surface 621 and the inclined surface 622 of the anti-reflection pattern 620 may be appropriately adjusted. That is, the areas of the upper surface 621 and the inclined surface 622 of the anti-reflective pattern 620 are adjusted so that the antireflective pattern 620 has an optimal incident rate, and the angle of the inclined surface 622 Can be adjusted.
  • the solar cell according to the embodiment may have improved optical characteristics and may have improved photoelectric conversion efficiency.
  • FIGS. 4 to 7 are views illustrating a process for manufacturing a solar cell according to the embodiment. This manufacturing method will be described with reference to the solar cell described above. In the description of the present manufacturing method, the foregoing description of the solar cell can be essentially combined.
  • a metal such as molybdenum is deposited on the support substrate 100 by a sputtering process, and a back electrode layer 200 is formed.
  • the back electrode layer 200 may be formed by two processes having different process conditions.
  • An additional layer such as a diffusion barrier may be interposed between the support substrate 100 and the back electrode layer 200.
  • a light absorbing layer 300 is formed on the back electrode layer 200.
  • the light absorbing layer 300 may be formed by a sputtering process or an evaporation method.
  • the light absorbing layer 300 For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 300.
  • the method of forming the light absorbing layer 300 and the method of forming the metal precursor film by the selenization process are widely used.
  • a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.
  • the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) light absorbing layer 300 by a selenization process.
  • the sputtering process and the selenization process using the copper target, the indium target, and the gallium target may be simultaneously performed.
  • the CIS-based or CIG-based light absorbing layer 300 may be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.
  • a buffer layer 400 and a high resistance buffer layer 500 are formed on the light absorbing layer 300.
  • the buffer layer 400 may be formed by chemical bath deposition (CBD). For example, after the light absorbing layer 300 is formed, the light absorbing layer 300 is immersed in a solution containing materials for forming cadmium sulfide, and the cadmium sulfide on the light absorbing layer 300 The buffer layer 400 is formed.
  • CBD chemical bath deposition
  • zinc oxide is deposited on the buffer layer 400 by a sputtering process, and the high resistance buffer layer 500 is formed.
  • a window layer 600 is formed on the high resistance buffer layer 500.
  • a transparent conductive material is stacked on the high resistance buffer layer 500 to form a transparent conductive layer 601.
  • the transparent conductive material include aluminum doped zinc oxide, indium zinc oxide or indium tin oxide.
  • a mask pattern 700 is formed on the transparent conductive layer 601.
  • the mask pattern 700 may be formed by a photolithography process. For example, a photosensitive resin is coated on the transparent conductive layer 601 to form a photoresist film. A portion of the photoresist film may be exposed and etched to form the mask pattern 700.
  • the mask pattern 700 has an island shape. That is, the mask pattern 700 includes a plurality of masks 701 having an island shape. In this case, the masks 701 are spaced apart from each other. In addition, the masks 701 may be arranged in a matrix form.
  • the width of the masks 701 may be about 1 ⁇ m, and the interval between the masks 701 may be about 3 ⁇ m.
  • Examples of the material used as the mask pattern 700 may include, and the thickness of the mask pattern 700 may be about 1 ⁇ m.
  • the transparent conductive layer 601 is etched using the mask pattern 700 as an etching mask.
  • the transparent conductive layer 601 is patterned by a wet etching process or a dry etching process.
  • the transparent conductive layer 601 of the portion where the mask pattern 700 is not disposed is inclined and etched.
  • the window layer 600 including the base layer 610 and the anti-reflection pattern 620 is formed on the light absorbing layer 300, and then the mask pattern 700 is removed.
  • first grooves 323a and second grooves 323b are formed in the transparent conductive layer 601, and by the first grooves 323a and the second grooves 323b, An antireflection pattern 620 is formed. Inner surfaces of the first grooves 323a and the second grooves 323b are inclined with respect to the top surface of the light absorbing layer 300.
  • the depth at which the transparent conductive layer 601 is etched may be smaller than 1/2 of the thickness of the transparent conductive layer 601. That is, the depths of the first grooves 323a and the second grooves 323b may be smaller than 1/2 of the thickness of the transparent conductive layer 601.
  • the solar cell manufacturing method according to the embodiment may easily provide a solar cell having an improved incident rate.
  • Solar cell and a method of manufacturing the same according to the embodiment can be used in the field of photovoltaic power generation.

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  • Photovoltaic Devices (AREA)
PCT/KR2011/003113 2010-10-05 2011-04-27 태양전지 및 이의 제조방법 Ceased WO2012046932A1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013532697A JP5784129B2 (ja) 2010-10-05 2011-04-27 太陽電池及びその製造方法
EP11830818A EP2523223A1 (en) 2010-10-05 2011-04-27 Solar cell and method for manufacturing same
CN2011800411766A CN103081122A (zh) 2010-10-05 2011-04-27 太阳能电池及其制造方法
US13/640,390 US20130025675A1 (en) 2010-10-05 2011-04-27 Solar cell and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100097056A KR101172192B1 (ko) 2010-10-05 2010-10-05 태양전지 및 이의 제조방법
KR10-2010-0097056 2010-10-05

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WO2012046932A1 true WO2012046932A1 (ko) 2012-04-12

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US (1) US20130025675A1 (enExample)
EP (1) EP2523223A1 (enExample)
JP (1) JP5784129B2 (enExample)
KR (1) KR101172192B1 (enExample)
CN (1) CN103081122A (enExample)
WO (1) WO2012046932A1 (enExample)

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US20160293787A1 (en) * 2012-11-12 2016-10-06 The Board Of Trustees Of The Leland Stanford Junior University Nanostructured window layer in solar cells

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ES2751450T3 (es) * 2013-03-14 2020-03-31 Fundacio Inst De Ciencies Fotòniques Electrodo transparente y sustrato para aplicaciones optoelectrónicas o plasmónicas que comprende plata
US9155201B2 (en) * 2013-12-03 2015-10-06 Eastman Kodak Company Preparation of articles with conductive micro-wire pattern
US10937915B2 (en) 2016-10-28 2021-03-02 Tesla, Inc. Obscuring, color matching, and camouflaging solar panels

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JPH06209114A (ja) * 1993-01-12 1994-07-26 Sanyo Electric Co Ltd 光起電力素子
KR20100030137A (ko) * 2008-09-09 2010-03-18 영남대학교 산학협력단 3차원 접합형 태양전지 및 그 제조방법
KR20100033177A (ko) * 2008-09-19 2010-03-29 삼성전자주식회사 태양전지 및 그 형성방법

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SE0301350D0 (sv) * 2003-05-08 2003-05-08 Forskarpatent I Uppsala Ab A thin-film solar cell
JP2005072332A (ja) * 2003-08-26 2005-03-17 Kyocera Corp 薄膜太陽電池
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JPH06209114A (ja) * 1993-01-12 1994-07-26 Sanyo Electric Co Ltd 光起電力素子
KR20100030137A (ko) * 2008-09-09 2010-03-18 영남대학교 산학협력단 3차원 접합형 태양전지 및 그 제조방법
KR20100033177A (ko) * 2008-09-19 2010-03-29 삼성전자주식회사 태양전지 및 그 형성방법

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Publication number Priority date Publication date Assignee Title
US20160293787A1 (en) * 2012-11-12 2016-10-06 The Board Of Trustees Of The Leland Stanford Junior University Nanostructured window layer in solar cells

Also Published As

Publication number Publication date
CN103081122A (zh) 2013-05-01
KR101172192B1 (ko) 2012-08-07
US20130025675A1 (en) 2013-01-31
JP2013539239A (ja) 2013-10-17
EP2523223A1 (en) 2012-11-14
KR20120035513A (ko) 2012-04-16
JP5784129B2 (ja) 2015-09-24

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