WO2012029449A1 - マイクロレンズアレイを使用した露光装置及び光学部材 - Google Patents
マイクロレンズアレイを使用した露光装置及び光学部材 Download PDFInfo
- Publication number
- WO2012029449A1 WO2012029449A1 PCT/JP2011/066994 JP2011066994W WO2012029449A1 WO 2012029449 A1 WO2012029449 A1 WO 2012029449A1 JP 2011066994 W JP2011066994 W JP 2011066994W WO 2012029449 A1 WO2012029449 A1 WO 2012029449A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- microlens array
- alignment mark
- mask
- microlens
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
- G02B3/0068—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7038—Alignment for proximity or contact printer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
Definitions
- the present invention relates to an exposure apparatus and an optical member using a microlens array.
- an exposure apparatus using a microlens array modifies an amorphous silicon film into a polysilicon film by irradiating the amorphous silicon film with laser light and melting and solidifying the amorphous silicon film by the heat of the laser light.
- a laser annealing apparatus it is used as an exposure apparatus for photolithography in which a mask image is projected and exposed onto a resist film, and a resist pattern is formed by subsequent development processing.
- An exposure apparatus using this microlens array is disclosed in Patent Document 1.
- an object to be exposed 101 is placed on a stage 100, and a photomask 102 and a microlens array 106 are disposed above the object to be exposed 101. Is arranged. Then, the exposure light from the light source 111 is condensed by the collimation lens 110 and irradiated to the photomask 102.
- the photomask 102 has a light shielding film 104 having an opening 105 formed on the upper surface of a transparent substrate 103, and a number of two-dimensionally arranged microlenses 107 are formed on the lower surface of the transparent substrate 103.
- a lens array 106 is configured.
- the exposure light that has passed through the opening 105 of the light shielding film 104 passes through the microlens 107 of the microlens array 106 and is converged to form an image on the exposure object 101.
- the photomask 102 and the microlens array 106 are supported by a mask stage 108.
- FIG. 5 is a sectional view showing a projection exposure type exposure apparatus using another conventional microlens array.
- a resist film 2 for photolithography is formed on the transparent substrate 1, and the substrate 1 is conveyed below the microlens exposure apparatus.
- a microlens array 3 formed by two-dimensionally arranging a large number of microlenses 3 a is provided, and a mask 4 is disposed above the microlens array 3.
- the microlens array 3 is formed of a transparent quartz substrate, and the microlens 3 a is processed on the transparent quartz substrate of the microlens array 3.
- the mask 4 is configured by bonding a Cr film 5 to the lower surface of a transparent substrate made of the same material as the microlens array 3, and the Cr film 5 has a hole 5 a for allowing laser light to pass therethrough. Yes.
- the portions other than the holes 5a in the mask 4 are covered with the Cr film 5 and serve as light shielding portions that block the passage of laser light.
- Both end portions of the microlens array 3 are bent so as to extend toward the mask 4, and end surfaces of the respective end portions are joined to the mask 4 thereabove. Thereby, the microlens array 3 and the mask 4 are fixed.
- the exposure laser beam when the exposure laser beam is irradiated onto the mask 4, the laser beam that has passed through the hole 5 a of the mask 4 is applied to each microlens 3 a of the microlens array 3. Incident light is converged on the resist film 2 on the substrate 1 by each microlens 3a. Note that a pattern to be projected is formed in the hole 5a, and the pattern is projected onto the resist film 2 when laser light passes through the hole 5a and is irradiated onto the resist film 2.
- the alignment of the substrate 1 with the mask 4 and the microlens array 3 is performed using the adjustment substrate 1a shown in FIG.
- Alignment marks 11 are formed on both ends of the lower surface of the mask 4 where the microlens array 3 is not disposed.
- a camera is provided below the alignment mark 11 and below the transparent adjustment substrate 1a.
- a transparent base 30 is provided on the adjustment substrate 1 a at a position facing the alignment mark 11, and a mark 31 is formed on the transparent base 30.
- the camera 10 positions the mask 4 and the microlens array 3 with respect to the adjustment substrate 1a so that the alignment mark 11 on the lower surface of the mask 4 and the mark 31 on the table 30 coincide within the same field of view.
- the position adjustment between the production substrate 1 and the mask 4 is performed by aligning the mask 4 and the substrate 1a.
- the microlens array 3 is bonded to the mask 4, so that the microlens surface of the microlens array 3 is closest to the surface of the substrate 1. For this reason, when a gap management abnormality occurs, the microlens surface first comes into contact with the substrate surface, and therefore the possibility of scratching the microlens is extremely high.
- the distance between the microlens array 3 and the substrate 1 is about 200 ⁇ m. As described above, since the distance between the microlens array 3 and the substrate 1 is short, when the foreign matter enters the substrate 1 when the substrate 1 is exposed by the microlens array 3, the microlens is caused by the foreign matter.
- the microlens array 3 is an extremely expensive part in the microlens array exposure apparatus. If the microlens array 3 is wrinkled, there is only a method for dealing with it. Therefore, there is an urgent need to take measures to prevent foreign matter from entering between the substrate 1 and the microlens array 3. However, in the conventional exposure apparatus, it is not possible to prevent foreign matter from entering between the substrate 1 and the microlens array 3. Further, conventionally, the alignment of the mask 4 and the adjustment substrate 1a is performed by using the adjustment substrate 1a, so that the alignment with the production substrate 1 is performed indirectly, which is complicated. there were.
- the present invention has been made in view of such problems, and can prevent foreign matter from entering between the microlens array and the substrate.
- the microlens is damaged due to abnormal approach of the substrate and the foreign matter.
- An object of the present invention is to provide an exposure apparatus and an optical member using a microlens array that can prevent this.
- An exposure apparatus using a microlens array includes a substrate stage that supports a transparent substrate to be exposed, a microlens array that is disposed above the substrate stage and has a plurality of microlenses, and the microlens array.
- a light shielding mask disposed above the lens array and fixed to the microlens array; an exposure light source; and exposure light transmitted from the exposure light guide to the light shielding mask through the light shielding mask.
- An optical system that forms an image on a substrate on the substrate stage by an array, an alignment mark base disposed on a surface of the mask facing the substrate, and an alignment formed on the surface of the alignment mark base facing the substrate Mark and light that is disposed below the transparent substrate and passes through the transparent substrate.
- Mark detection means for detecting the substrate mark provided on the transparent substrate and the alignment mark within the same field of view, and the distance between the alignment mark base and the substrate is the microlens. And the distance between the substrate and the substrate.
- the alignment mark base may be configured such that a recess or a step is formed on the surface facing the substrate, and the alignment mark is formed at a position where the recess or the step is low. .
- the microlens array and the transparent substrate are relatively movable, and the alignment marks are formed in pairs at both ends of the mask in the direction orthogonal to the moving direction.
- An optical member includes a microlens array that forms an exposure light image on a substrate to be exposed and exposes the substrate, a light-shielding mask fixed to the microlens array in parallel with the microlens array, An alignment mark base disposed outside the microlens array on the surface of the mask on which the microlens array is disposed, and an alignment mark formed on a front end surface of the alignment mark base, and the alignment The distance between the tip surface of the mark base and the mask is greater than the distance between the tip surface of the microlens array and the mask.
- a concave portion or a step is formed on the tip surface of the alignment mark base, and the alignment mark can be formed at a position where the concave portion or the step is low.
- the alignment mark base is closest to the substrate, even if a gap management abnormality occurs or a foreign object enters the substrate, the substrate or the foreign object comes into contact with the microlens array. Not an alignment mark base. For this reason, the microlens array is prevented from being damaged by contact with the substrate or the foreign matter. Further, in the present invention, it is not necessary to use an adjustment substrate for alignment between the mask and the substrate, and alignment with respect to the production substrate can be performed during the exposure process.
- FIG. 1 is a longitudinal sectional view showing an exposure apparatus using a microlens array according to a first embodiment of the present invention.
- the transparent substrate 1 is transported onto an appropriate substrate stage (not shown) and supported by this substrate stage.
- a resist film 2 for photolithography is formed, and this resist film 2 is irradiated with exposure light from the microlens exposure apparatus of the present embodiment.
- Above the substrate stage (substrate 1) there is provided a microlens array 3 formed by two-dimensionally arranging a large number of microlenses 3a.
- a mask 4 is disposed above the microlens array 3. ing.
- the microlens array 3 is formed of, for example, a transparent quartz substrate, and the microlens 3 a is processed on the transparent quartz substrate of the microlens array 3.
- the light shielding mask 4 is configured by bonding a Cr (chromium) film 5 to the lower surface of a transparent substrate made of the same material as the microlens array 3, and the Cr film 5 has a hole 5a through which laser light passes. Is formed.
- the Cr film 5 having the holes 5 a is disposed at the center in the width direction of the mask 4.
- Both end portions of the microlens array 3 are bent upward toward the mask 4, and the end surfaces 6 of the respective end portions are joined to the mask 4 above the end portions 6. Thereby, the microlens array 3 and the mask 4 are fixed.
- the exposure light incident on the mask 4 from an appropriate light source passes through the hole 5a of the Cr film 5 of the mask 4 and enters the microlens array 3, and the microlens array 3 causes the resist film on the substrate 1 to be exposed. 2 is projected.
- the microlens array 3 forms the pattern of the holes 5a of the mask 4 on the resist film 2 on the substrate 1 in the same magnification image.
- Alignment mark bases 12 are bonded to both ends of the lower surface of the mask 4 where the microlens array 3 is not disposed.
- the surface of the alignment mark base 12 facing the substrate 1 is, for example, a + -shaped alignment.
- a mark 11 is formed.
- a camera 10 is disposed below the alignment mark 11 and below the transparent substrate 1.
- An alignment mark window is formed on the substrate 1, and the alignment mark 11 is observed from the camera 10 through the alignment mark window and imaged. Thereby, in the image image
- the mask 4 and the microlens array 3 are positioned with respect to the substrate 1 so as to match.
- the height of the alignment mark base 12 is determined so that the alignment mark 11 is closer to the substrate 1 than the microlens array 3. That is, the distance between the alignment mark 11 or the alignment mark base 12 and the substrate 1 is smaller than the distance between the microlens array 3 and the substrate 1.
- two pairs of alignment marks 11 are provided on each side of each microlens array 3.
- a plurality of microlens arrays 3 are arranged in a direction perpendicular to the scanning direction of the substrate 1, and in the direction perpendicular to the scanning direction of the substrate 1, the exposure region of the substrate 1 is exposed at the same time.
- exposure is continuously performed in the course of scanning, or scanning is temporarily stopped and intermittent exposure is performed.
- the mark 20 is a mark used during mask manufacturing.
- the exposure holes that have passed through the holes 5 a of the mask 4 become the microlenses of the microlens array 3.
- the light is incident on 3a and converges on the resist film 2 on the substrate 1 by each microlens 3a.
- a pattern to be projected is formed in the hole 5a, and when the laser beam passes through the hole 5a and is irradiated onto the resist film 2, the pattern is formed on the resist film 2 as an erect life-size image. Projected.
- the gap between the microlens array 3 and the substrate 1 is controlled to be a predetermined value (for example, 200 ⁇ m). Further, the positions of the microlens array 3 and the mask 4 with respect to the substrate 1 are imaged through the alignment window of the substrate 1 by the camera 10 disposed below the substrate 1, and the alignment window 11 of the substrate 1 is imaged. The provided substrate mark and the alignment mark 11 on the alignment mark base 12 are determined to coincide with each other in the same field of view.
- the microlens array 3 may abnormally approach the substrate 1.
- the alignment mark base 12 first contacts the substrate 1.
- the microlens array 3 does not come into contact with the substrate 1 and the microlens array 3 is not damaged.
- the substrate 1 and the exposure light source are scanned and the substrate 1 and the exposure light source move with respect to the microlens array 3 and the mask 4, there is a possibility that foreign matter may enter the substrate 1. If foreign matter enters during this exposure, the foreign matter is shielded by the alignment mark base 12 and does not enter between the microlens array 3 and the substrate 1. For this reason, even if a foreign substance enters the substrate 1 during exposure, the microlens array 3 is not damaged.
- the microlens array 3 is prevented from being damaged.
- the alignment mark 11 may be damaged when a gap abnormality or foreign matter intrusion occurs.
- the alignment process between the substrate using the alignment mark 11 and the microlens array 3 and the mask 4 is performed before the exposure, even if the abnormality occurs during the exposure and the alignment mark 11 is damaged, there is no problem. Absent.
- the microlens array 3 is peeled off from the transparent substrate of the mask 4 at the end face 6, and the microlens array 3 is bonded to another mask 4, The microlens array 3 can be reused. Therefore, it is possible to reduce the running cost of exposure by effectively using the expensive microlens array 3.
- the alignment mark 11 is provided on the substrate facing surface of the alignment mark base 12, the alignment mark 11 is close to the substrate 1, and the distance between the alignment mark 11 and the substrate 1 is the camera. 10 the alignment mark on the substrate 1 and the alignment mark 11 are imaged within the same field of view by the camera 10 provided below the substrate 1, and the substrate 1, the microlens array 3, and the mask 4 are captured. Can be aligned. Further, in the present embodiment, the alignment of the mask 4 and the microlens array 3 and the substrate 1 can be performed on the production substrate during the exposure process, and it is necessary to align using the adjustment substrate. There is no.
- a recess 14 is formed on the lower surface of the alignment mark base 13 provided on the lower surface of the mask 4, that is, on the surface facing the substrate 1, and on the surface facing the substrate 1 in the recess 14.
- An alignment mark 11 is formed.
- the alignment mark base 13 is formed so that the distance between the surface around the recess 14 and the substrate 1 is smaller than the distance between the microlens array 3 and the substrate 1.
- the alignment mark 11 is not limited to the case where a concave portion is provided on the front end surface of the alignment mark base 13 and is formed in the concave portion.
- the alignment mark 11 may be formed on a surface closer to the substrate 1 than the most protruding surface on the front end surface.
- the present invention can prevent the microlens array from being damaged by foreign matter and can easily align the substrate and the mask in the exposure apparatus using the microlens array.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
1a:調整用基板
2:レジスト膜
3:マイクロレンズアレイ
3a:マイクロレンズ
4:マスク
5:Cr膜
5a:孔
10:カメラ
11:アライメントマーク
12,13:アライメントマーク台
30:台
31:マーク
Claims (5)
- 露光対象の透明基板を支持する基板ステージと、この基板ステージの上方に配置され複数個のマイクロレンズが形成されたマイクロレンズアレイと、このマイクロレンズアレイの上方に配置され前記マイクロレンズアレイに固定された遮光マスクと、露光光源と、この露光光源から出射された露光光を前記遮光マスクに導き前記遮光マスクを透過した露光光を前記マイクロレンズアレイにより前記基板ステージ上の基板に結像させる光学系と、前記マスクの前記基板との対向面に配置されたアライメントマーク台と、このアライメントマーク台における前記基板との対向面に形成されたアライメントマークと、前記透明基板の下方に配置され前記透明基板を透過した光を前記アライメントマークに照射して前記透明基板に設けた基板マークと前記アライメントマークとを同一視野内で検知するマーク検知手段と、を有し、前記アライメントマーク台と前記基板との間隔は、前記マイクロレンズと前記基板との間隔よりも小さいことを特徴とするマイクロレンズアレイを使用した露光装置。
- 前記アライメントマーク台は、前記基板との対向面に凹部又は段差が形成されており、前記アライメントマークは前記凹部又は段差の低い位置に形成されていることを特徴とする請求項1に記載のマイクロレンズアレイを使用した露光装置。
- 前記マイクロレンズアレイと前記透明基板とは相対的に移動可能であり、前記アライメントマークは前記マスクにおける前記移動方向に直交する方向の両端部に、対となって形成されていることを特徴とする請求項1又は2に記載のマイクロレンズアレイを使用した露光装置。
- 露光対象の基板に露光光を結像させて前記基板を露光するマイクロレンズアレイと、このマイクロレンズアレイと平行に前記マイクロレンズアレイに固定された遮光マスクと、このマスクの前記マイクロレンズアレイが配置された側の面における前記マイクロレンズアレイより外側に配置されたアライメントマーク台と、このアライメントマーク台の先端面に形成されたアライメントマークと、を有し、前記アライメントマーク台の先端面と前記マスクとの間の距離は、前記マイクロレンズアレイの先端面と前記マスクとの間の距離より大きいことを特徴とする光学部材。
- 前記アライメントマーク台の先端面には、凹部又は段差が形成されており、前記アライメントマークは前記凹部又は段差の低い位置に形成されていることを特徴とする請求項4に記載の光学部材。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US13/814,222 US9304391B2 (en) | 2010-08-30 | 2011-07-26 | Exposure apparatus using microlens array and optical member |
KR1020137008056A KR101862427B1 (ko) | 2010-08-30 | 2011-07-26 | 마이크로 렌즈 어레이를 사용한 노광 장치 및 광학 부재 |
CN201180042029.0A CN103081060B (zh) | 2010-08-30 | 2011-07-26 | 使用了微透镜阵列的曝光装置及光学构件 |
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JP2010-192861 | 2010-08-30 | ||
JP2010192861A JP5376379B2 (ja) | 2010-08-30 | 2010-08-30 | マイクロレンズアレイを使用した露光装置及び光学部材 |
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WO2012029449A1 true WO2012029449A1 (ja) | 2012-03-08 |
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US (1) | US9304391B2 (ja) |
JP (1) | JP5376379B2 (ja) |
KR (1) | KR101862427B1 (ja) |
CN (1) | CN103081060B (ja) |
TW (1) | TWI531867B (ja) |
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CN102597880B (zh) * | 2009-10-29 | 2015-09-16 | 株式会社V技术 | 曝光装置和光掩模 |
JP6023952B2 (ja) * | 2011-07-29 | 2016-11-09 | 株式会社ブイ・テクノロジー | マイクロレンズアレイ及びそれを使用したスキャン露光装置 |
US10891460B2 (en) * | 2017-07-18 | 2021-01-12 | Will Semiconductor (Shanghai) Co. Ltd. | Systems and methods for optical sensing with angled filters |
JP7066559B2 (ja) * | 2018-07-13 | 2022-05-13 | 東京エレクトロン株式会社 | 接合装置および接合方法 |
CN109062001B (zh) * | 2018-08-27 | 2022-04-08 | 京东方科技集团股份有限公司 | 一种掩膜版 |
JP7082927B2 (ja) * | 2018-08-27 | 2022-06-09 | 株式会社Screenホールディングス | 露光装置 |
CN109801837A (zh) | 2019-02-02 | 2019-05-24 | 京东方科技集团股份有限公司 | 驱动背板的激光退火工艺及掩膜版 |
CN114913558B (zh) * | 2021-02-08 | 2024-08-16 | 苏州苏大维格科技集团股份有限公司 | 微透镜阵列成像组件的制备方法 |
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JP2009277900A (ja) * | 2008-05-15 | 2009-11-26 | V Technology Co Ltd | 露光装置及びフォトマスク |
WO2010047362A1 (ja) * | 2008-10-24 | 2010-04-29 | 株式会社ブイ・テクノロジー | 露光装置及びフォトマスク |
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2011
- 2011-07-26 US US13/814,222 patent/US9304391B2/en not_active Expired - Fee Related
- 2011-07-26 CN CN201180042029.0A patent/CN103081060B/zh not_active Expired - Fee Related
- 2011-07-26 WO PCT/JP2011/066994 patent/WO2012029449A1/ja active Application Filing
- 2011-07-26 KR KR1020137008056A patent/KR101862427B1/ko active IP Right Grant
- 2011-08-25 TW TW100130557A patent/TWI531867B/zh not_active IP Right Cessation
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JP2009277900A (ja) * | 2008-05-15 | 2009-11-26 | V Technology Co Ltd | 露光装置及びフォトマスク |
WO2010047362A1 (ja) * | 2008-10-24 | 2010-04-29 | 株式会社ブイ・テクノロジー | 露光装置及びフォトマスク |
Also Published As
Publication number | Publication date |
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KR20140002620A (ko) | 2014-01-08 |
US20130128253A1 (en) | 2013-05-23 |
JP5376379B2 (ja) | 2013-12-25 |
KR101862427B1 (ko) | 2018-05-29 |
TW201222163A (en) | 2012-06-01 |
TWI531867B (zh) | 2016-05-01 |
US9304391B2 (en) | 2016-04-05 |
CN103081060B (zh) | 2016-01-20 |
JP2012049479A (ja) | 2012-03-08 |
CN103081060A (zh) | 2013-05-01 |
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