WO2012026091A1 - 電子装置の製造方法 - Google Patents

電子装置の製造方法 Download PDF

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Publication number
WO2012026091A1
WO2012026091A1 PCT/JP2011/004598 JP2011004598W WO2012026091A1 WO 2012026091 A1 WO2012026091 A1 WO 2012026091A1 JP 2011004598 W JP2011004598 W JP 2011004598W WO 2012026091 A1 WO2012026091 A1 WO 2012026091A1
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Prior art keywords
terminal
electronic component
resin layer
laminate
resin
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PCT/JP2011/004598
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English (en)
French (fr)
Inventor
和布浦　徹
Hiroki NIKAIDO (二階堂 広基)
Original Assignee
住友ベークライト株式会社
二階堂 美奈
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Application filed by 住友ベークライト株式会社, 二階堂 美奈 filed Critical 住友ベークライト株式会社
Priority to JP2012530520A priority Critical patent/JPWO2012026091A1/ja
Publication of WO2012026091A1 publication Critical patent/WO2012026091A1/ja

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Definitions

  • the present invention relates to an electronic device manufacturing method.
  • the electronic device performs, for example, a process of bonding a terminal of a semiconductor element and a terminal of another semiconductor element, a terminal of the semiconductor element and a terminal of a substrate, or a terminal of the substrate and a terminal of another substrate using solder. Manufactured by.
  • between the semiconductor elements Since there are gaps between the semiconductor elements after bonding using solder, between the semiconductor elements and the substrate, or between the boards (hereinafter referred to as between the semiconductor elements), it is necessary to fill the gaps with a cured resin. There is. Conventionally, after bonding using solder, a fluid thermosetting resin is poured between semiconductor elements, and then the resin is cured to fill gaps between the semiconductor elements.
  • Patent Document 1 Japanese Patent Document 1
  • Patent Document 1 discloses a method of disposing a film-like underfill resin on a substrate surface and then mounting a semiconductor element on the underfill resin.
  • the semiconductor element is pressed against a substrate to form a stacked body of the semiconductor element and the substrate. Thereafter, the underfill resin is cured in a high-pressure atmosphere.
  • the underfill resin may adhere to a member (clamping member) for pressing the semiconductor element against the substrate and bringing the electrode of the semiconductor element into contact with the connection pad of the substrate. If underfill resin adheres to the pinching member, the semiconductor element and the substrate may be misaligned when the pinching member and the laminate are separated. Moreover, the necessity to wash
  • a method of manufacturing an electronic device comprising: a first electronic component having a first terminal having a solder layer on a surface; and a second electronic component having a second terminal joined to the first terminal of the first electronic component.
  • the step of obtaining a laminate includes A first step of performing deaeration while heating the laminated body below the curing temperature of the thermosetting resin, and pressurizing the laminated body along the laminating direction with the sandwiched body sandwiched by a pinching member under reduced pressure.
  • an electronic device manufacturing method including a second step of pressurizing the stacked body along a stacking direction and bringing the first terminal and the second terminal into contact with each other.
  • the first step of obtaining the laminate deaeration is performed while heating the laminate at a predetermined temperature.
  • degassing bubbles present at the interface between the first electronic component and the resin layer, bubbles present in the resin layer, and bubbles present at the interface between the resin layer and the second electronic component can be removed.
  • the bubbles are removed in the first step, it is also possible to suppress the bubbles from expanding and the resin of the resin layer from adhering to the pinching member in the first step.
  • the laminated body is heated at the temperature exceeding the heating temperature of a 1st process.
  • the heating temperature in the second step can be made higher than the heating temperature in the first step, The fluidity of the resin layer can be improved and the resin existing between the first terminal and the second terminal can be eliminated.
  • the bubbles are degassed in advance in the first step, even if the laminate is heated at a temperature exceeding the heating temperature in the first step in the second step, the resin in the resin layer is sandwiched by the expansion of the bubbles. It can suppress adhering to.
  • the second step is performed under an atmosphere of atmospheric pressure or higher.
  • the expansion of the bubbles can be suppressed, and the resin of the resin layer can be suppressed from adhering to the pinching member.
  • the present invention it is possible to suppress the resin of the resin layer from adhering to the pinching member, so that the productivity of the electronic device can be improved.
  • an electronic device manufacturing method capable of improving productivity.
  • the electronic device manufacturing method of the present embodiment includes a first electronic component 1 having a first terminal 11 having a solder layer 112 on the surface, and a second terminal 21 joined to the first terminal 11 of the first electronic component 1. And a second electronic component 2 having an electronic device (semiconductor device).
  • a resin layer 3 containing a flux active compound and a thermosetting resin is disposed between a first terminal 11 of a first electronic component 1 and a second terminal 21 of a second electronic component 2.
  • a resin layer 3 containing a flux active compound and a thermosetting resin is disposed between a first terminal 11 of a first electronic component 1 and a second terminal 21 of a second electronic component 2.
  • the laminate 4 is deaerated while being heated at a temperature lower than the curing temperature of the thermosetting resin, and the laminate 4 is sandwiched between the sandwich members 53 under reduced pressure.
  • the first electronic component 1 is prepared.
  • the first electronic component 1 is, for example, any one of a substrate (flexible substrate, rigid substrate, ceramic substrate, etc.), a semiconductor chip, a semiconductor element mounting substrate, and the like.
  • the first electronic component 1 has a first terminal 11, and the first terminal 11 includes a first terminal body 111 and a solder layer 112 provided on the surface of the first terminal body 111.
  • the shape of the first terminal body 111 is not particularly limited, and examples thereof include a convex shape and a concave shape.
  • the material in particular of the 1st terminal main body 111 is not restrict
  • the material of the solder layer 112 is not particularly limited, and examples thereof include an alloy including at least two selected from the group consisting of tin, silver, lead, zinc, bismuth, indium, and copper. Among these, an alloy containing at least two selected from the group consisting of tin, silver, lead, zinc, and copper is preferable.
  • the melting point of the solder layer 112 is 110 to 250 ° C., preferably 170 to 230 ° C.
  • the solder layer 112 may be solder-plated with respect to the first terminal main body 111, and is configured by solder balls or solder paste disposed on the first terminal main body 111 to form solder bumps or the like. There may be.
  • a plurality of first electronic components 1 are formed in series.
  • the substrates are connected to form a single large substrate.
  • disconnecting the 1st electronic components 1 is formed in the large sized board
  • the second electronic component 2 is prepared (see FIG. 1).
  • the second electronic component 2 is, for example, either a semiconductor chip or a semiconductor element mounting substrate.
  • the second electronic component 2 has a second terminal 21.
  • the shape of the second terminal 21 is not particularly limited as long as it can be soldered to the first terminal 11, and examples thereof include a convex shape and a concave shape. Moreover, the material in particular of the 2nd terminal 21 is not restrict
  • alignment of the plurality of first electronic components 1 and the plurality of second electronic components 2 is performed in the atmosphere. At this time, the first terminal 11 and the second terminal 21 are not in direct contact.
  • the resin layer 3 includes a thermosetting resin that can fill a gap between the first electronic component 1 and the second electronic component 2.
  • a thermosetting resin contained in the resin layer 3 for example, epoxy resin, oxetane resin, phenol resin, (meth) acrylate resin, unsaturated polyester resin, diallyl phthalate resin, maleimide resin, and the like can be used. These can be used individually or in mixture of 2 or more types.
  • the minimum melt viscosity at 100 to 200 ° C. of the resin layer 3 is preferably 1 to 10000 Pa ⁇ s, particularly preferably 1 to 1000 Pa ⁇ s.
  • the minimum melt viscosity at 100 to 200 ° C. of the resin layer 3 is in the above range, voids (voids) are hardly generated in the cured product.
  • the minimum melt viscosity is measured, for example, using a rheometer, which is a viscoelasticity measuring device, by applying shear shear at a frequency of 0.1 Hz to a sample in a film state at a heating rate of 10 ° C./min.
  • the resin layer 3 is a resin layer having an action of removing an oxide film on the surface of the solder layer 112 during solder joining. Since the resin layer 3 has a flux action, the oxide film covering the surface of the solder layer 112 is removed, so that solder bonding can be performed.
  • the resin layer 3 In order for the resin layer 3 to have a flux action, the resin layer 3 needs to contain a flux active compound.
  • the flux active compound contained in the resin layer 3 is not particularly limited as long as it is used for solder bonding, but includes any of a carboxyl group, a phenol hydroxyl group, a compound having both a carboxyl group and a phenol hydroxyl group, and the like. preferable.
  • the blending amount of the flux active compound in the resin layer 3 is preferably 1 to 30% by weight, particularly preferably 3 to 20% by weight.
  • the flux activity of the resin layer 3 can be improved, and the thermosetting resin and unreacted flux activity in the resin layer 3 can be improved. The compound is prevented from remaining.
  • phenol novolak resin cresol novolak resin, aliphatic dicarboxylic acid, aromatic dicarboxylic acid and the like that act as a curing agent for epoxy resin also have a flux action.
  • the resin layer 3 containing the flux active curing agent that acts as a flux active compound and also acts as a curing agent for the thermosetting resin as a curing agent for the thermosetting resin has a flux effect.
  • Resin layer 3 is formed.
  • the flux active compound having a carboxyl group means a compound having one or more carboxyl groups in the molecule, and may be liquid or solid.
  • the flux active compound having a phenolic hydroxyl group means a compound having one or more phenolic hydroxyl groups in the molecule, and may be liquid or solid.
  • the flux active compound having a carboxyl group and a phenolic hydroxyl group means a compound having one or more carboxyl groups and phenolic hydroxyl groups in the molecule, and may be liquid or solid.
  • examples of the flux active compound having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids.
  • Examples of the aliphatic acid anhydride related to the flux active compound having a carboxyl group include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like.
  • Examples of alicyclic acid anhydrides related to flux active compounds having a carboxyl group include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydro Examples thereof include phthalic anhydride and methylcyclohexene dicarboxylic acid anhydride.
  • aromatic acid anhydride related to the flux active compound having a carboxyl group phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, glycerol tris trimellitate, Etc.
  • Examples of the aliphatic carboxylic acid related to the flux active compound having a carboxyl group include compounds represented by the following general formula (1), formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid caproic acid, caprylic acid, and lauric acid. , Myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, oxalic acid, and the like.
  • general formula (1) formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid caproic acid, caprylic acid, and lauric acid.
  • n represents a natural number of 20 or less.
  • Aromatic carboxylic acids related to flux active compounds with carboxyl groups include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, planitic acid, pyromellitic acid, merit Acid, triyl acid, xylyl acid, hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxy) Benzoic acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5 -Naphthoic acid derivatives such as dihydroxy-2-naphthoic acid, phenolphthaline
  • the compound represented by the general formula (1) is preferable.
  • the compound in which n in the formula (1) is 3 to 10 can suppress an increase in elastic modulus in the resin layer after curing. It is particularly preferable in that the adhesion between the first electronic component 1 and the second electronic component 2 can be improved.
  • glutaric acid HOOC— (CH 2 ) 3 —COOH
  • Examples of the flux active compound having a phenolic hydroxyl group include phenols. Specifically, for example, phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2 , 4-xylenol, 2,5 xylenol, m-ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, resorcinol, p-octylphenol, Monomers containing phenolic hydroxyl groups such as p-phenylphenol, bisphenol A, bisphenol F, bisphenol AF, biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol , Phenol novolak resins, o- cresol novolak resin, bisphenol F novo
  • the above-described carboxyl group or phenol hydroxyl group, or a compound having both a carboxyl group and a phenol hydroxyl group is taken in three-dimensionally by reaction with a thermosetting resin such as an epoxy resin.
  • the flux active compound there is a flux active curing agent having a flux action and acting as a curing agent for the epoxy resin. preferable.
  • Examples of the flux active curing agent include, in one molecule, two or more phenolic hydroxyl groups that can be added to an epoxy resin, and one or more carboxyls directly bonded to an aromatic group that exhibits a flux action (reduction action). And a compound having a group.
  • flux active curing agents examples include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,4- Benzoic acid derivatives such as dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,7- Examples thereof include naphthoic acid derivatives such as dihydroxy-2-naphthoic acid; phenolphthaline; and diphenolic acid. These may be used alone or in combination of two or more.
  • phenolphthaline it is estimated that the epoxy resin can be cured after removing the oxide on the surface of the solder layer 112.
  • the amount of the flux active curing agent in the resin layer 3 is preferably 1 to 30% by weight, and particularly preferably 3 to 20% by weight.
  • the blending amount of the flux active curing agent in the resin layer 3 is in the above range, the flux activity of the resin layer can be improved, and the resin layer has a flux active curing that has not reacted with the thermosetting resin. The agent is prevented from remaining.
  • the resin layer 3 may contain the inorganic filler.
  • the minimum melt viscosity of the resin layer 3 can be increased and the formation of a gap between the first terminal 11 and the second terminal 21 can be suppressed.
  • the fluidity of the resin layer 3 becomes very high, the resin layer 3 enters between the first terminal 11 and the second terminal 21, and the first The one terminal 11 and the second terminal 21 may be separated from each other.
  • examples of the inorganic filler include silica and alumina.
  • the resin layer 3 may contain a curing catalyst.
  • a curing catalyst can be suitably selected according to the kind of thermosetting resin in the resin layer 3, an imidazole compound can be used from a viewpoint of a coating-film moldability improvement, for example.
  • imidazole compound examples include 2-phenylhydroxyimidazole and 2-phenyl-4-methylhydroxyimidazole.
  • the mixing ratio of the curing catalyst is, for example, 0.01% by weight or more and 5% by weight or less when the total of the constituent components of the resin layer 3 is 100.
  • the blending ratio of the curing catalyst is set to 0.01% by weight or more, the function as the curing catalyst can be exhibited more effectively and the curability of the resin layer 3 can be improved.
  • the preservability of the resin layer 3 can further be improved by setting the blending ratio of the curing catalyst to 5% by weight or less.
  • the liquid resin composition which concerns on the method (2) does not contain a solvent.
  • a plurality of resin layers 3 are connected to each other to constitute one resin sheet straddling the plurality of first electronic components 1. If it demonstrates in detail, the resin sheet will be comprised by the some resin layer 3, and the connection part which has connected resin layers 3, and resin layers 3 are connected via the connection part.
  • the resin layer 3 of the laminate 4 is in a semi-cured (B stage) state.
  • the laminate 4 is heated below the curing temperature of the thermosetting resin of the resin layer 3.
  • the first terminal 11 and the second terminal 21 are not soldered by the solder layer 112 of the first terminal 11.
  • the first electronic component 1 and the second electronic component 2 are bonded through the semi-cured resin layer 3.
  • this step is performed in two steps.
  • the curing temperature of the thermosetting resin is the curing temperature of the resin layer 3.
  • the resin layer was measured at a heating rate of 10 ° C./min using a DSC (Differential Scanning Calorimeter). The exothermic peak temperature at that time.
  • the apparatus 5 includes a jig 53 that is a clamping member that simultaneously clamps the plurality of stacked bodies 4. More specifically, the apparatus 5 includes a furnace (heating furnace) 51 in which a plurality of laminated bodies 4 are disposed, an upper heating plate 521, a lower heating plate 522, and a jig 53 disposed in the furnace 51. And a suction means (atmospheric pressure adjusting means) 54 for sucking the gas (air) in the furnace 51.
  • the furnace 51 includes an upper mold 511 and a lower mold 512, and an upper heating plate 521 and a lower heating plate 522 are arranged in a space formed by the upper mold 511 and the lower mold 512.
  • the upper heating plate 521 and the lower heating plate 522 are arranged to face each other, and a jig 53 (pressing member) and a plurality of laminated bodies 4 are arranged between the upper heating plate 521 and the lower heating plate 522.
  • the pair of hot plates 521 and 522 have a temperature lower than the melting point of the solder layer 112 and lower than the curing temperature of the thermosetting resin of the resin layer 3.
  • the jig 53 includes an upper pressure member 531 having a groove and a flat plate-like lower pressure member 532.
  • a plurality of stacked bodies 4 are arranged between the upper pressure member 531 and the lower pressure member 532.
  • the upper pressure member 531 has a plate shape and a planar rectangular shape.
  • the upper pressure member 531 is formed with a plurality of grooves 531A, and some of the grooves 531A intersect each other.
  • the grooves 531A are formed in a lattice shape.
  • the region 531B partitioned by the groove 531A comes into contact with the second electronic component 2 of the laminate 4.
  • the second electronic component 2 of one stacked body 4 comes into contact with one region 531B.
  • the lower pressure member 532 has a planar rectangular shape, and no groove is formed in the lower pressure member 532, and the lower pressure member 532 is made of a plate material having a flat surface.
  • the lower pressure member 532 and the surface of the upper pressure member 531 on which the groove 531A is formed are opposed to each other.
  • the first electronic component 1 of the stacked body 4 is in contact with the lower pressure member 532.
  • the material of the lower pressure member 532 and the upper pressure member 531 is not particularly limited, and examples thereof include a metal plate and a ceramic plate.
  • Examples of the metal plate include a stainless plate, a titanium plate, and a lead plate.
  • Examples of the ceramic plate include a glass plate, an alumina plate, a silicon nitride plate, and a zirconia plate. However, those having good thermal conductivity are preferred.
  • a plurality of laminates 4 are arranged between the upper pressure member 531 and the lower pressure member 532 of the jig 53, and the upper pressure member 531 and The plurality of stacked bodies 4 are sandwiched by the lower pressure member 532.
  • the width W1 of the groove 531A (the length in the direction orthogonal to the extending direction of the groove 531A) is larger than the gap W2 between the adjacent stacked bodies 4.
  • the end surface (side surface) of the second electronic component 2 that abuts on the region 531B defined by the groove 531A protrudes inside the groove 531A from the side surface 531C of the groove 531A.
  • the region 531 ⁇ / b> B defined by the groove 531 ⁇ / b> A having the width W ⁇ b> 1 of the upper pressure member 531 is formed in a shape located outside the second terminal 21 of the second electronic component 2.
  • the resin layers 3 of the adjacent laminates 4 are formed continuously, but since a gap is formed between the adjacent second electronic components 2, the resin layer 3 is connected from the gap. A part of the resin sheet constituted by is exposed. The exposed portion of the resin sheet faces the groove 531A.
  • the jig 53 and the plurality of laminated bodies 4 are transported into the furnace 51.
  • a transport film or the like may be used.
  • the upper heating plate 521 and the lower heating plate 522 are in a heated state in advance.
  • the temperatures of the upper heating plate 521 and the lower heating plate 522 are lower than the curing temperature of the resin layer 3.
  • the upper heating plate 521 and the lower heating plate 522 may be heated in a state in which the gas in the furnace 51 is sucked and is at a predetermined pressure.
  • the upper mold 511 is moved to the lower mold 512 side, and the gap between the upper mold 511 and the lower mold 512 is closed.
  • the lower heat plate 522 comes into contact with the lower pressure member 532 of the jig 53 (see FIG. 4).
  • the gas in the furnace 51 is sucked by the suction means 54, degassing is started, and the pressure is reduced to less than atmospheric pressure.
  • the atmosphere in the furnace 51 is set to a vacuum (for example, 10 hPa or less).
  • the lower limit value of the atmospheric pressure in the furnace 51 is not particularly limited, but is preferably 0.1 hPa or more in consideration of the durability of the furnace 51 and the like.
  • the gas in the furnace 51 is continuously sucked and the upper heating plate 521 is moved downward while maintaining the reduced pressure, and the upper heating plate 521 is moved to the upper pressure member 531 of the jig 53. Abut. Thereafter, when the laminated body 4 reaches a predetermined temperature (below the curing temperature of the resin layer 3), the upper heating plate 521 is further pressed against the upper pressure member 531 side to pressurize the laminated body 4.
  • the upper pressing member 531 of the jig 53 is pushed downward by the upper heating plate 521, and the jig 53 is clamped by the lower heating plate 522 and the upper heating plate 521, and the upper pressing member 531 and the lower pressing member of the jig 53 are pressed.
  • the plurality of stacked bodies 4 are clamped by the pressure member 532.
  • the laminate 4 is heated with the upper heating plate 521 and the lower heating plate 522 so that the temperature is lower than the curing temperature of the resin layer 3 and the viscosity of the resin layer 3 is 10 Pa ⁇ s or more and 10,000 Pa ⁇ s or less.
  • the laminate 4 is preferably clamped. In particular, it is preferably 10 Pa ⁇ s or more and 100 Pa ⁇ s or less.
  • the temperature at which the viscosity of the resin layer 3 is 10 Pa ⁇ s or more and 10,000 Pa ⁇ s or less can be measured as follows. The temperature at which the viscosity of the resin layer 3 is 10 Pa ⁇ s or more and 10000 Pa ⁇ s or less is grasped in advance.
  • thermocouple is inserted so as to be embedded in the resin layer 3 and output to an external data logger to measure the resin temperature, and the measured temperature is 10 Pa ⁇ s or more and 10,000 Pa ⁇ s or less.
  • the temperature at which the predetermined viscosity is obtained can be grasped as follows.
  • the resin layer 3 is set on a dynamic viscoelasticity measuring device Rheo Stress RS150 (manufactured by HAAKE).
  • the temperature between the plates is raised from 25 ° C. at a gap of 50 ⁇ m, a frequency of 0.1 Hz and a heating rate of 10 ° C./min, and the temperature at which the above-mentioned specific viscosity is obtained is grasped.
  • the temperature of the resin layer 3 is based also on the kind etc. of the thermosetting resin which comprises the resin layer 3, it is preferable that it is 60 degreeC or more and 150 degrees C or less, for example.
  • the laminated body 4 will be pressurized along a lamination direction at a 1st process, it is preferable that the applied pressure is 0.01 Mpa or more and 0.1 Mpa or less.
  • the first terminal 11 and the second terminal 21 begin to sink into the resin layer 3 by sandwiching the laminate 4, but the resin layer is between the first terminal 11 and the second terminal 21. 3 intervenes.
  • the first terminal 11 and the second terminal 21 may not be in contact at all, and the resin layer 3 is interposed between a part of the first terminal 11 and a part of the second terminal 21, and the first terminal The other part of the terminal 11 and the other part of the second terminal 21 may be in contact with each other.
  • the stacked body 4 is pressurized along the stacking direction, but the applied pressure is lower than the pressure applied to the stacked body 4 in the second step (clamping pressure).
  • the applied pressure (clamping pressure) applied to the laminate 4 in the first step is smaller than the applied pressure in the second step. Damage to the first terminal 11 and the second terminal 21 can be suppressed.
  • the suction of the gas in the furnace 51 by the suction means 54 is stopped, the outside air introduction valve (not shown) is opened, the outside air is introduced into the furnace 51, and the pressure is reduced to atmospheric pressure. Thereafter, the upper mold 511 and the lower mold 512 are separated from each other, and the plurality of stacked bodies 4 are carried out from the furnace 51.
  • the second step described above is performed using the apparatus 7 shown in FIG.
  • the resin layer 3 existing between the first terminal 11 and the second terminal 21 is excluded, and the first terminal 11 and the second terminal 21 are brought into contact with each other.
  • the device 7 does not have the suction means 54.
  • the other points are the same as those of the device 5.
  • a plurality of stacked bodies 4 sandwiched between jigs 53 are conveyed into the furnace 51.
  • the upper heating plate 521 and the lower heating plate 522 are in a heated state in advance.
  • the temperature of the upper heating plate 521 and the lower heating plate 522 is lower than the curing temperature of the resin layer 3, but is higher than the temperature of the upper heating plate 521 and the lower heating plate 522 of the device 5.
  • the upper mold 511 is moved to the lower mold 512 side, and the gap between the upper mold 511 and the lower mold 512 is closed.
  • the lower heat plate 522 comes into contact with the lower pressure member 532 of the jig 53 (see FIG. 4).
  • the upper heating plate 521 is moved downward in a state where the inside of the furnace 51 is under atmospheric pressure, and the upper heating plate 521 is brought into contact with the upper pressure member 531 of the jig 53.
  • the upper pressing member 531 of the jig 53 is pushed downward by the upper heating plate 521, and the jig 53 is clamped by the lower heating plate 522 and the upper heating plate 521, and the upper pressing member 531 and the lower pressing member of the jig 53 are pressed.
  • the plurality of stacked bodies 4 are clamped by the pressure member 532.
  • the temperature is lower than the curing temperature of the resin layer 3 so that the viscosity of the resin layer 3 is lower than the viscosity of the resin layer 3 in the first step (viscosity during clamping). Furthermore, it is preferable to heat the laminate 4 with the upper heating plate 521 and the lower heating plate 522. More preferably, the resin layer 3 is clamped at a time (temperature) when the viscosity becomes 5 Pa ⁇ s or less and 1 Pa ⁇ s or more. By setting the viscosity of the resin layer 3 to 5 Pa ⁇ s or less, it is possible to prevent the resin from being sandwiched between the terminals 11 and 21.
  • the temperature at which the viscosity of the resin layer 3 is 5 Pa ⁇ s or less and 1 Pa ⁇ s or more can be measured as follows. The temperature at which the viscosity of the resin layer 3 is 5 Pa ⁇ s or less and 1 Pa ⁇ s or more is determined in advance. Next, a thermocouple is inserted so as to be embedded in the resin layer 3 and output to an external data logger to measure the resin temperature, and the measured temperature is 5 Pa ⁇ s or less and 1 Pa ⁇ s or more. Whether or not The temperature at which the predetermined viscosity is obtained can be grasped as follows.
  • the resin layer 3 is set on a dynamic viscoelasticity measuring device Rheo Stress RS150 (manufactured by HAAKE).
  • the temperature between the plates is raised from 25 ° C. at a gap of 50 ⁇ m, a frequency of 0.1 Hz and a heating rate of 10 ° C./min, and the temperature at which the above-mentioned specific viscosity is obtained is grasped.
  • the temperature of the resin layer 3 is based also on the kind etc. of the thermosetting resin which comprises the resin layer 3, it is 120 degreeC or more and less than hardening temperature, for example, 30 degreeC or more from the heating temperature of a 1st process It is preferably 140 ° C. or lower. Thereby, the resin layer 3 between terminals can be excluded reliably and generation
  • the laminate 4 is pressurized along the lamination direction, and the applied pressure is preferably higher than the pressure applied to the laminate 4 in the first step. It is preferably 0.2 MPa or more and 1 MPa or less. Thereby, the resin layer 3 which exists between the 1st terminal 11 and the 2nd terminal 21 is excluded, and the 1st terminal 11 and the 2nd terminal 21 can be made to contact reliably.
  • the apparatus 7 may be equipped with the atmospheric pressure adjustment means for making the inside of the furnace 51 into the pressure atmosphere exceeding atmospheric pressure.
  • the atmospheric pressure adjusting means introduces a fluid, for example, gas, into the furnace 51, and the atmosphere in the furnace 51 exceeds atmospheric pressure.
  • the laminate 4 is laminated at a temperature higher than that of the first step and under an atmosphere exceeding atmospheric pressure while heating at a temperature lower than the curing temperature of the thermosetting resin. You may pressurize along a direction.
  • the plurality of stacked bodies 4 are heated to the melting point or higher of the solder layer 112 of the first terminal 11 to solder the first terminal 11 and the second terminal 21 together. .
  • the apparatus 6 can heat the laminated body 4 in a pressurized atmosphere.
  • the structure of the apparatus 6 includes, for example, a container 61 that houses the laminated body 4 and a fluid for introducing the fluid into the container 61. And a pipe 62.
  • the container 61 is characterized by being a pressure vessel. After the laminated body 4 is installed in the container 61, the laminated body 4 is heated by heating from the pipe 62 and flowing a pressurized fluid into the container 61. Pressurize.
  • the laminated body 4 can also be heated by flowing the fluid from the pipe 62 into the container 61 and heating the container 61 in a pressurized atmosphere.
  • the material of the container 61 include metals, such as stainless steel, titanium, copper, and alloys thereof.
  • the pressure applied when the laminate 4 is pressurized with a fluid is 0.1 to 10 MPa, preferably 0.5 to 5 MPa. By doing in this way, it becomes difficult to generate voids in the cured resin layer 3.
  • pressurizing with a fluid refers to making the pressure of the atmosphere of the laminated body 4 higher than atmospheric pressure by the applied pressure. That is, the applied pressure of 10 MPa indicates that the pressure acting on the laminate is 10 MPa greater than the atmospheric pressure.
  • the laminated body 4 After installing the laminated body 4 in the container 61, the laminated body 4 is heated and the laminated body 4 is pressurized.
  • the fluid that pressurizes the stacked body 4 is introduced into the container 61 from the pipe 62 and pressurizes the stacked body 4.
  • a non-oxidizing gas such as nitrogen gas or argon gas, or a gas such as air is preferable.
  • a non-oxidizing gas By using a non-oxidizing gas, the first terminal 11 and the second terminal 21 can be joined better.
  • the non-oxidizing gas means inert gas or nitrogen gas.
  • the laminate 4 After the temperature of the laminate 4 reaches the melting point of the solder layer 112 or higher, the laminate 4 is heated and pressurized for a predetermined time while maintaining the temperature and pressure in the container 61. Thereby, the resin layer 3 in the laminated body 4 will harden
  • the laminate 4 is taken out from the apparatus 6 and the laminate 4 is cured again as necessary.
  • an electronic device can be obtained (see FIG. 10).
  • the first terminal 11 and the second terminal 21 are joined by the solder layer 112, and the tip of the second terminal 21 is in a state of being bitten into the solder layer 112.
  • a plurality of separated electronic devices can be obtained by cutting between the first electronic components 1 and between the resin layers 3 according to the dotted cutting line shown in FIG.
  • the effect of this embodiment is demonstrated.
  • deaeration is performed while heating the laminate 4 at a predetermined temperature.
  • bubbles present at the interface between the first electronic component 1 and the resin layer 3 bubbles present within the resin layer 3, and bubbles present at the interface between the resin layer 3 and the second electronic component 2 are removed.
  • the bubbles are removed in the first step, it is also possible to suppress the bubbles from expanding and the resin of the resin layer 3 from adhering to the pinching member 53 in the first step.
  • the laminated body 4 is heated at the temperature exceeding the heating temperature of a 1st process.
  • the heating temperature of the laminated body 4 can be made higher than that in the first process in the second process, and the fluidity of the resin layer 3 can be improved. 11 and the resin existing between the second terminals 21 can be eliminated. Further, if the heating temperature in the first step is set to a low temperature, the viscosity of the resin layer 3 can be kept relatively high, so that the foaming of remaining bubbles can be reliably suppressed by the resin layer 3. For example, in the first step, foaming of bubbles can be reliably suppressed by heating the resin layer 3 so that the viscosity of the resin layer 3 is 10 Pa ⁇ s or more. If the resin layer 3 is heated so that the viscosity of the resin layer 3 is 10000 Pa ⁇ s or less, the terminals 11 and 21 can be easily bited into the resin layer 3.
  • the laminate 4 is heated at a higher temperature than in the first step.
  • the bubbles are removed in the first step, even if the viscosity of the resin layer 3 decreases in the second step.
  • the resin of the resin layer 3 can be suppressed from adhering to the pinching member 53.
  • the second step of obtaining the laminate 4 is carried out in an atmosphere at atmospheric pressure or higher. Therefore, even when there are bubbles that could not be deaerated in the first step, the expansion of the bubbles can be suppressed, and the resin of the resin layer 3 can be suppressed from adhering to the pinching member 53.
  • the laminated body 4 is heated at a temperature higher than that in the first step in the second step, if the second step is performed under reduced pressure, bubbles easily expand, and the resin of the resin layer 3 is sandwiched by pressure. It becomes easy to adhere to the member 53.
  • the manufacturing method of the present embodiment it is possible to suppress the resin of the resin layer 3 from adhering to the pinching member 53, so that the productivity of the electronic device can be improved.
  • the process is performed in two processes having different atmospheric pressures and heating temperatures.
  • the process of forming the laminated body 4 is considered to be carried out in one process at a constant atmospheric pressure and heating temperature, the following problems arise.
  • the laminate 4 is heated from the beginning at the same temperature as the second step of the present embodiment. In this case, if the pressure is reduced, the bubbles easily expand, and the resin of the resin layer 3 tends to adhere to the pinching member 53.
  • this embodiment employs two processes with different atmospheric pressure and heating temperature, thereby preventing adhesion of the resin of the resin layer 3 to the pinching member 53 and between the terminals. Therefore, it is possible to obtain an electronic device with high connection reliability by reliably removing the resin.
  • the inside of the furnace 51 is evacuated in the first step. Thereby, the bubble in the laminated body 4 can be deaerated reliably. Moreover, in this embodiment, the inside of the furnace 51 is made into atmospheric pressure in a 2nd process. Therefore, the second step can be performed without complicating the structure of the device 7, and the manufacturing cost of the electronic device can be reduced.
  • the groove 531A is formed in the upper pressure member 531 that sandwiches the stacked body 4. Even when the resin layer 3 of the laminate 4 protrudes from the laminate 4 when the laminate 4 is clamped, the protruded resin layer 3 can escape into the groove 531A. Thereby, it is possible to prevent the resin from entering between the second electronic component 2 and the upper pressure member 531.
  • the resin protruding from the laminated body 4 may crawl up along the end surface of the second electronic component 2 of the laminated body 4. Since the side surface 531C of the groove 531A does not protrude to the inside of the groove 531A from the end surface of the second electronic component 2, the resin scooping up the end surface of the second electronic component 2 adheres to the upper pressure member 531. This can be suppressed. Therefore, contamination of the upper pressure member 531 with the resin can be prevented.
  • the resin protruding from the laminated body 4 adheres to the upper pressure member, and the surface of the upper pressure member on the laminated body 4 side is flat. There is a possibility of disappearing. Therefore, the load acting on the laminate 4 may vary. On the other hand, in this embodiment, since the adhesion of the resin to the upper pressure member 531 can be prevented as described above, it is possible to suppress the occurrence of variations in the load acting on the laminate 4.
  • the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
  • the first electronic components 1 and the resin layers 3 may be separated in advance, and there may be a gap (gap) between the first electronic components 1 and between the resin layers 3.
  • the upper pressure member 531 is brought into contact with the second electronic component 2, but the present invention is not limited to this, and the upper pressure member 531 may be brought into contact with the first electronic component 1. Good.
  • the upper pressure member 531 is in contact with the first electronic component 1, and in the other laminate 4, the upper pressure member 531 is in contact with the second electronic component 2. It may be. However, from the viewpoint of the stability of bonding between the terminals, it is preferable that the parts contacting the upper pressure member 531 are the same parts as in the above embodiment.
  • the laminated body 4 was clamped using the jig
  • the 1st process was implemented using the apparatus 5, and the 2nd process was implemented using the apparatus 7, it is not restricted to this but 1st apparatus is used using one apparatus. You may implement a process and a 2nd process.
  • the apparatus 5 is used and the furnace is evacuated and the first step is performed, decompression is released, the pressure is returned to atmospheric pressure, and the laminate 4 is heated at a higher temperature to perform the second step.
  • the 1st electronic component 1 had a solder layer, it is not restricted to this, The 2nd electronic component may also have a solder layer.
  • Example 1 (Preparation of resin layer 3) 15 parts by weight of phenolphthalin (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux active compound, 15 parts by weight of PR-53467 (manufactured by Sumitomo Bakelite Co., Ltd.) as a phenol novolac resin, and EOCN-102070 (Nippon Kayaku Co., Ltd.) as an epoxy resin 50 parts by weight, 20 parts by weight of YP-50 (manufactured by Tohto Kasei Co., Ltd.) as a phenoxy resin, 1.0 part by weight of KBM-303 (manufactured by Shin-Etsu Silicone Co., Ltd.) as a silane coupling agent, and an imidazole compound 0.1 part by weight of 2P4MZ (manufactured by Shikoku Kasei Co., Ltd.) was dissolved in acetone to prepare a varnish-like resin composition.
  • phenolphthalin manufactured by Tokyo Chemical Industry Co.,
  • the varnish-like resin composition obtained above is applied to a polyester sheet (base material) using a comma coater, dried at a temperature of 100 ° C. for 3 minutes at which the acetone volatilizes, and formed on the base material. A 25 ⁇ m film-like resin layer 3 was obtained.
  • the film-like resin layer 3 formed on the base material is used on the surface on which the solder bumps (solder layer 112) of the circuit board (first electronic component 1) are formed, using a vacuum laminator, temperature: 100 ° C., 0 Lamination was performed under a condition of 7 MPa, and then the substrate was peeled off. Next, it aligned so that the 1st terminal 11 of a circuit board and the 2nd terminal 21 of a semiconductor chip (2nd electronic component 2) may oppose. Then, the 1st process and the 2nd process were implemented like the above-mentioned embodiment. First, a plurality of laminates 4 were sandwiched with a jig 53 and installed in the furnace 51 of the apparatus 5.
  • the gas in the furnace 51 was attracted
  • the laminated body 4 was heated to 80 ° C. (the viscosity of the resin layer 3 at this time is 10.3 Pa ⁇ s, and the measurement method is as described above. This is the method described in the embodiment).
  • the laminated body 4 was heat-pressed at 80 degreeC under vacuum for 280 seconds.
  • the clamping pressure applied to the stacked body 4 along the stacking direction of the stacked body 4 was 0.05 MPa (first step).
  • a resin layer is interposed between the terminals 11 and 21.
  • the laminate 4 was taken out from the device 5. Thereafter, the plurality of laminates 4 were sandwiched with a jig 53 and installed in the furnace 51 of the apparatus 7. And the laminated body 4 was heated to 150 degreeC (less than thermosetting temperature). By sandwiching the jig 53 with the pair of hot plates 521 and 522, the laminated body 4 was heated to 150 ° C. (the viscosity of the resin layer 3 at this time is 2.1 Pa ⁇ s, and the measurement method is as described above. This is the method described in the embodiment). And the laminated body 4 was heat-pressed at 150 degreeC under atmospheric pressure for 500 second.
  • the clamping pressure applied to the stacked body 4 along the stacking direction of the stacked body 4 was 0.5 MPa (second step).
  • the resin between the terminals 11 and 21 was removed, and the terminals 11 and 12 were in direct contact with each other. Thereafter, the laminate 4 was taken out from the device 7.
  • the device 6 was used to solder the first terminal and the second terminal, and the resin layer 3 was cured.
  • the container 61 of the apparatus 6 was heated to 100 ° C. in advance, and then the laminate 4 was placed in the container 61.
  • the fluid (air) was sent in the container 61, and the laminated body 4 was heated to melting
  • Example 2 (Preparation of resin layer 3)
  • the manufacturing method of the resin layer 3 is shown below. 45 parts by weight of cresol novolac type epoxy resin EOCN-102070 (manufactured by Nippon Kayaku Co., Ltd.) as an epoxy resin, 15 parts by weight of PR-53467 (manufactured by Sumitomo Bakelite Co., Ltd.) as a phenol novolak resin, and phenoxy resin YP-50 (manufactured by Tohto Kasei Co., Ltd.), 15 parts by weight of phenolphthaline (manufactured by Tokyo Kasei Co., Ltd.) as a compound having a flux action, and KBM-303 as a silane coupling agent 1.0 part by weight (manufactured by Shin-Etsu Silicone Co., Ltd.) and 0.05 part by weight of 2P4MZ (manufactured by Shikoku Kasei Co., Ltd.) as an imidazole compound are dissolved in acetone
  • the varnish-like resin composition obtained above is applied to a polyester sheet (base material) using a comma coater, dried at a temperature of 100 ° C. for 3 minutes at which the acetone volatilizes, and formed on the base material. A 25 ⁇ m film-like resin layer 3 was obtained.
  • An electronic device was manufactured using the obtained resin layer 3.
  • the manufacturing method is the same as in Example 1, and the viscosity of the resin layer 3 at the time when the laminate 4 is heated to 80 ° C. in the first step is 10.3 Pa ⁇ s.
  • the viscosity of the resin layer 3 when the laminated body 4 was heated to 150 ° C. was 2.1 Pa ⁇ s.
  • Example 1 An electronic device was created in the same manner as in Example 1 except that the first step of Example 1 was not performed.
  • Example 2 The first step was carried out in the same manner as in Example 1. An electronic device was produced in the same manner as in Example 1 except that in the second step, the laminate was heated not under atmospheric pressure but under vacuum.

Abstract

　積層体４を前記熱硬化性樹脂の硬化温度未満で加熱しながら、脱気を行い、減圧下で挟圧部材（５３）で積層体を挟んで積層体を積層方向に沿って加圧する第一工程と、積層体を前記第一工程よりも高い温度であり、前記熱硬化性樹脂の硬化温度未満の温度で加熱しながら、大気圧以上の雰囲気下で、挟圧部材（５３）で積層体を挟んで前記積層体を積層方向に沿って加圧し、第一端子と第二端子とを接触させる第二工程とを実施する。これにより、電子装置の生産性を向上させることができる。

Description

電子装置の製造方法
本発明は、電子装置の製造方法に関する。
　電子装置は、例えば、半導体素子の端子と他の半導体素子の端子、半導体素子の端子と基板の端子、又は基板の端子と他の基板の端子とを、半田を用いて接合する工程を行うことにより製造される。
　半田を用いて接合を行った後の半導体素子間、半導体素子と基板と間、あるいは基板間（以下、半導体素子間等という）には、隙間ができるので、樹脂の硬化物で隙間を埋める必要がある。従来は、半田を用いて接合した後に、半導体素子間等に、流動性の熱硬化性樹脂を流し込み、次いで、樹脂を硬化することにより、半導体素子間等の隙間を埋めていた。
　ところが、上述した方法では、半導体素子間等に、すきまなく流動性の熱硬化性樹脂を流し込むことが難しいため、以下のような方法が特許文献１において、提案されている。
　特許文献１には、基板表面にフィルム状のアンダーフィル樹脂を配置し、その後、アンダーフィル樹脂上に半導体素子を搭載する方法が開示されている。特許文献１では、アンダーフィル樹脂上に半導体素子を搭載した後、半導体素子を基板に圧接し、半導体素子と基板との積層体を形成する。その後、高圧雰囲気中でアンダーフィル樹脂を硬化させている。
特開２００４－３１１７０９号公報
　近年、より生産性の高い製造方法が求められているが、特許文献１に開示された製造方法ではこのような要求にこたえることがむずかしかった。
　上述した製造方法では、アンダーフィル樹脂上に半導体素子を搭載した後、半導体素子を基板に圧接し、半導体素子と基板との積層体を形成している。この際、半導体素子の端子（電極）と基板の端子（接続パッド）とを接触させる必要がある。そこで、アンダーフィル樹脂を加熱してやわらかくし、半導体素子を基板に圧接させることで、半導体素子の電極と基板の接続パッドとを接触させる方法が考えられる。
　しかしながら、この場合、半導体素子を基板に圧接し半導体素子の電極と基板の接続パッドとを接触させるための部材（挟圧部材）に対し、アンダーフィル樹脂が付着してしまうことがある。
　前記挟圧部材にアンダーフィル樹脂が付着してしまうと、前記挟圧部材と前記積層体とを離間させる際に、半導体素子と基板との位置ずれが生じることがある。また、前記挟圧部材を洗浄する必要性も生じ、生産性に影響を及ぼす。
　本発明者らが鋭意検討を行った結果、アンダーフィル樹脂が挟圧部材に付着してしまう原因として、以下の点がわかった。
　アンダーフィル樹脂中、アンダーフィル樹脂と半導体素子との界面、アンダーフィル樹脂と基板との界面には多数の気泡が存在することがわかった。
　半導体素子の電極と基板の接続パッドとを接触させる際に、アンダーフィル樹脂を加熱すると、前記気泡が膨張する。この気泡の膨張により、加熱されたアンダーフィル樹脂が押し出され、アンダーフィル樹脂の一部が前記挟圧部材に付着してしまうのである。
　本発明はこのような知見に基づいて発案されたものである。
　すなわち、本発明によれば、
　表面に半田層を有する第一端子を有する第一電子部品と、この第一電子部品の前記第一端子に接合される第二端子を有する第二電子部品とを備える電子装置の製造方法であって、
　前記第一電子部品の第一端子と、前記第二電子部品の第二端子との間にフラックス活性化合物と、熱硬化性樹脂とを含む樹脂層を配置して積層体を得る工程と、
　前記積層体を前記第一端子の前記半田層の融点以上に加熱して、前記第一端子と、前記第二端子とを半田接合させる工程と、
　流体により前記積層体を加圧しながら、前記樹脂層を硬化させる工程とを含み、
　積層体を得る前記工程は、
　前記積層体を前記熱硬化性樹脂の硬化温度未満で加熱しながら、脱気を行い、減圧下で挟圧部材で前記積層体を挟んで前記積層体を積層方向に沿って加圧する第一工程と、
　前記積層体を第一工程の加熱温度よりも高い温度であり、前記熱硬化性樹脂の硬化温度未満の温度で加熱しながら、大気圧以上の雰囲気下で、挟圧部材で前記積層体を挟んで前記積層体を積層方向に沿って加圧し、前記第一端子と前記第二端子とを接触させる第二工程とを含む電子装置の製造方法が提供される。
　この発明によれば、積層体を得る工程の第一工程において、積層体を所定の温度で加熱しながら、脱気を行っている。この脱気により、第一電子部品と樹脂層との界面に存在する気泡、樹脂層中に存在する気泡、樹脂層と第二電子部品との界面に存在する気泡を取り除くことができる。このように第一工程で気泡が取り除かれるため、第一工程において、気泡が膨張し樹脂層の樹脂が挟圧部材に付着することも抑制できる。
　また、積層体を得る工程の第二工程においては、積層体を第一工程の加熱温度を超える温度で加熱している。このように加熱温度が異なる２つの工程を設けることで、第一工程における加熱温度を抑制しても、第二工程での加熱温度を第一工程の加熱温度よりも高温とすることができ、樹脂層の流動性を高め、第一端子および第二端子間に存在する樹脂を排除することができる。また、第一工程であらかじめ気泡を脱気しているので、第二工程において第一工程の加熱温度を超える温度で積層体を加熱しても、気泡の膨張により樹脂層の樹脂が挟圧部材に付着することが抑制できる。
　さらに、第二工程は、大気圧以上の雰囲気下で実施されている。そのため、第一工程において脱気しきれなかった気泡が存在する場合でも、気泡の膨張を抑制することができ、樹脂層の樹脂が挟圧部材に付着することが抑制できる。
　以上により、本発明では、樹脂層の樹脂が挟圧部材に付着してしまうことを抑制できるので電子装置の生産性を向上させることができる。
　本発明によれば、生産性を向上させることができる電子装置の製造方法が提供される。
上述した目的、およびその他の目的、特徴および利点は、以下に述べる好適な実施の形態、およびそれに付随する以下の図面によってさらに明らかになる。
本発明の一実施形態にかかる電子装置の製造工程を示す図である。 電子装置の製造工程を示す図である。 電子装置の製造工程を示す図である。 電子装置の製造装置を示す断面図である。 電子装置の製造装置を示す断面図である。 電子装置の製造装置を示す断面図である。 治具の要部を示す平面図である。 電子装置の製造装置を示す断面図である。 電子装置の製造装置を示す断面図である。 電子装置を示す断面図である。
　以下、本発明の実施形態を図面に基づいて説明する。はじめに、図１ないし図５を参照して、本実施形態の電子装置の製造方法の概要について説明する。
　本実施形態の電子装置の製造方法は、表面に半田層１１２を有する第一端子１１を有する第一電子部品１と、この第一電子部品１の第一端子１１に接合される第二端子２１を有する第二電子部品２と、を備える電子装置（半導体装置）の製造方法である。
　この電子装置の製造方法は、第一電子部品１の第一端子１１と第二電子部品２の第二端子２１との間に、フラックス活性化合物と熱硬化性樹脂とを含む樹脂層３を配置して積層体４を得る工程と、積層体４を第一端子１１の半田層１１２の融点以上に加熱して、第一端子１１と第二端子２１とを半田接合させる工程と、流体により積層体４を加圧しながら、樹脂層３を硬化させる工程とを含む。
　積層体４を得る前記工程は、積層体４を前記熱硬化性樹脂の硬化温度未満で加熱しながら、脱気を行い、減圧下で挟圧部材５３で積層体４を挟んで積層体４を積層方向に沿って加圧する第一工程と、
　積層体４を前記第一工程の加熱温度よりも高い温度であり、前記熱硬化性樹脂の硬化温度未満の温度で加熱しながら、大気圧以上の雰囲気下で、挟圧部材５３で積層体４を挟んで前記積層体４を積層方向に沿って加圧し、第一端子１１と第二端子２１とを接触させる第二工程とを含む。
　次に、本実施形態の電子装置の製造方法について詳細に説明する。はじめに、図１に示すように、第一電子部品１を用意する。この第一電子部品１は、例えば、基板（フレキシブル基板、リジット基板、セラミック基板等）、半導体チップ、半導体素子搭載基板等のいずれかである。
　この第一電子部品１は第一端子１１を有し、この第一端子１１は、第一端子本体１１１と、第一端子本体１１１表面に設けられた半田層１１２と、を備える。第一端子本体１１１の形状は、特に限定されず、凸状のものや、凹状のものが挙げられる。また、第一端子本体１１１の材質は、特に制限されず、金、銅、ニッケル、パラジウム、アルミニウムが挙げられる。
　半田層１１２の材料は、特に制限されず、錫、銀、鉛、亜鉛、ビスマス、インジウムおよび銅からなる群から選択される少なくとも二種以上を含む合金、等が挙げられる。これらのうち、錫、銀、鉛、亜鉛、銅、からなる群から選択される少なくとも二種以上を含む合金が好ましい。
　半田層１１２の融点は、１１０～２５０℃、好ましくは１７０～２３０℃である。半田層１１２は、第一端子本体１１１に対し半田メッキされたものであってもよく、また、第一端子本体１１１に対し半田ボールや半田ペーストを配置し、半田バンプ等で構成されるものであってもよい。
　ここで、図６に示すように、第一電子部品１は、複数個連なって形成されている。例えば、第一電子部品１が基板である場合には、各基板同士が接続されて一枚の大型の基板を構成している。なお、大型の基板には、図６の点線で示すように、第一電子部品１同士を切り離すための切断ラインが形成されている。
　次に、第二電子部品２を用意する（図１参照）。第二電子部品２は、例えば、半導体チップや、半導体素子搭載基板のいずれかである。この第二電子部品２は、第二端子２１を有する。
　第二端子２１の形状は、特に制限されず、第一端子１１に対して半田接合が行える形状であればよく、例えば、凸状のものや、凹状のものが挙げられる。また、第二端子２１の材質は、特に制限されず、金、銅、ニッケル、パラジウム、アルミニウム、等が挙げられる。
　次に、図２に示すように、第一電子部品１の第一端子１１と、第二電子部品２の第二端子２１との間にフラックス活性化合物と、熱硬化性樹脂とを含む樹脂層３を配置し、第一端子１１と第二端子２１との位置あわせを行う。その後、樹脂層３を挟んで、第一電子部品１、第二電子部品２を重ねる。この段階では、第二端子２１は樹脂層３にめり込んでいてもよく、めり込んでいなくてもよい。
　ここでは、複数の第一電子部品１と複数の第二電子部品２との位置あわせを大気中で行う。このとき、第一端子１１と第二端子２１とは直接接触していない。
　樹脂層３は、第一電子部品１と、第二電子部品２との隙間を埋めることができる熱硬化性樹脂を含んで構成される。樹脂層３に含まれる熱硬化性樹脂は、例えば、エポキシ樹脂、オキセタン樹脂、フェノール樹脂、（メタ）アクリレート樹脂、不飽和ポリエステル樹脂、ジアリルフタレート樹脂、マレイミド樹脂、等を用いることができる。これらは、単独または二種以上を混合して用いることができる。
　なかでも、硬化性と保存性、硬化物の耐熱性、耐湿性、耐薬品性、に優れるエポキシ樹脂が好適に用いられる。樹脂層３の１００～２００℃における最低溶融粘度は、好ましくは１～１００００Ｐａ・ｓ、特に好ましくは１～１０００Ｐａ・ｓである。
　樹脂層３の１００～２００℃における最低溶融粘度が上記範囲にあることにより、硬化物中に空隙（ボイド）が発生し難くなる。最低溶融粘度は、例えば、粘弾性測定装置であるレオメーターを用いて、フィルム状態のサンプルに１０℃／分の昇温速度で、周波数０．１Ｈｚのずり剪断を与えて測定される。
　樹脂層３は、半田接合の際に、半田層１１２の表面の酸化被膜を除去する作用を有する樹脂層である。樹脂層３が、フラックス作用を有することにより、半田層１１２の表面を覆っている酸化被膜が除去されるので、半田接合を行うことができる。
　樹脂層３がフラックス作用を有するためには、樹脂層３が、フラックス活性化合物を含有する必要がある。樹脂層３に含有されるフラックス活性化合物としては、半田接合に用いられるものであれば、特に制限されないが、カルボキシル基、フェノール水酸基のいずれか、カルボキシル基、フェノール水酸基の両方を備える化合物、等が好ましい。
　樹脂層３中のフラックス活性化合物の配合量は、１～３０重量％が好ましく、３～２０重量％が特に好ましい。樹脂層３中のフラックス活性化合物の配合量が、上記範囲であることにより、樹脂層３のフラックス活性を向上させることができるとともに、樹脂層３中に、熱硬化性樹脂と未反応のフラックス活性化合物が残存するのが防止される。
　なお、未反応のフラックス活性化合物が残存すると、マイグレーションが発生する可能性がある。また、熱硬化性樹脂の硬化剤として作用する化合物の中には、フラックス作用も有する化合物がある（以下、このような化合物を、フラックス活性硬化剤とも記載する）。
　例えば、エポキシ樹脂の硬化剤として作用するフェノールノボラック樹脂、クレゾールノボラック樹脂、脂肪族ジカルボン酸、芳香族ジカルボン酸等は、フラックス作用も有している。
　このような、フラックス活性化合物としても作用し、熱硬化性樹脂の硬化剤としても作用するようなフラックス活性硬化剤を、熱硬化性樹脂の硬化剤として含有する樹脂層３は、フラックス作用を有する樹脂層３となる。
　なお、カルボキシル基を備えるフラックス活性化合物とは、分子中にカルボキシル基が一つ以上存在するものをいい、液状であっても固体であってもよい。また、フェノール性水酸基を備えるフラックス活性化合物とは、分子中にフェノール性水酸基が一つ以上存在するものをいい、液状であっても固体であってもよい。
　また、カルボキシル基およびフェノール性水酸基を備えるフラックス活性化合物とは、分子中にカルボキシル基およびフェノール性水酸基がそれぞれ一つ以上存在するものをいい、液状であっても固体であってもよい。
　これらのうち、カルボキシル基を備えるフラックス活性化合物としては、脂肪族酸無水物、脂環式酸無水物、芳香族酸無水物、脂肪族カルボン酸、芳香族カルボン酸、等が挙げられる。
　カルボキシル基を備えるフラックス活性化合物に係る脂肪族酸無水物としては、無水コハク酸、ポリアジピン酸無水物、ポリアゼライン酸無水物、ポリセバシン酸無水物、等が挙げられる。
　カルボキシル基を備えるフラックス活性化合物に係る脂環式酸無水物としては、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、無水メチルハイミック酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、トリアルキルテトラヒドロ無水フタル酸、メチルシクロヘキセンジカルボン酸無水物、等が挙げられる。
　カルボキシル基を備えるフラックス活性化合物に係る芳香族酸無水物としては、無水フタル酸、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸無水物、エチレングリコールビストリメリテート、グリセロールトリストリメリテート、等が挙げられる。
　カルボキシル基を備えるフラックス活性化合物に係る脂肪族カルボン酸としては、下記一般式（１）で示される化合物や、蟻酸、酢酸、プロピオン酸、酪酸、吉草酸、ピバル酸カプロン酸、カプリル酸、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、アクリル酸、メタクリル酸、クロトン酸、オレイン酸、フマル酸、マレイン酸、シュウ酸、マロン酸、琥珀酸、等が挙げられる。
　　［化１］
　ＨＯＯＣ－（ＣＨ２）ｎ－ＣＯＯＨ　　　（１）
　式（１）中、ｎは、２０以下の自然数を表す。
　カルボキシル基を備えるフラックス活性化合物に係る芳香族カルボン酸としては、安息香酸、フタル酸、イソフタル酸、テレフタル酸、ヘミメリット酸、トリメリット酸、トリメシン酸、メロファン酸、プレーニト酸、ピロメリット酸、メリット酸、トリイル酸、キシリル酸、ヘメリト酸、メシチレン酸、プレーニチル酸、トルイル酸、ケイ皮酸、サリチル酸、２，３－ジヒドロキシ安息香酸、２，４－ジヒドロキシ安息香酸、ゲンチジン酸（２，５－ジヒドロキシ安息香酸）、２，６－ジヒドロキシ安息香酸、３，５－ジヒドロキシ安息香酸、浸食子酸（３，４，５－トリヒドロキシ安息香酸）、１，４－ジヒドロキシ－２－ナフトエ酸、３，５－ジヒドロキシ－２－ナフトエ酸等のナフトエ酸誘導体、フェノールフタリン、ジフェノール酸、等が挙げられる。
　これらのカルボキシル基を備えるフラックス活性化合物のうち、フラックス活性化合物が有する活性度、樹脂層の硬化時におけるアウトガスの発生量、および硬化後の樹脂層の弾性率やガラス転移温度等のバランスが良い点で、上記一般式（１）で示される化合物が好ましい。
　そして、上記一般式（１）で示される化合物のうち、式（１）中のｎが３～１０である化合物が、硬化後の樹脂層における弾性率が増加するのを抑制することができるとともに、第一電子部品１と第二電子部品２との接着性を向上させることができる点で、特に好ましい。
　上記一般式（１）で示される化合物のうち、式（１）中のｎが３～１０である化合物としては、例えば、ｎ＝３のグルタル酸（ＨＯＯＣ－（ＣＨ２）３－ＣＯＯＨ）、ｎ＝４のアジピン酸（ＨＯＯＣ－（ＣＨ２）４－ＣＯＯＨ）、ｎ＝５のピメリン酸（ＨＯＯＣ－（ＣＨ２）５－ＣＯＯＨ）、ｎ＝８のセバシン酸（ＨＯＯＣ－（ＣＨ２）８－ＣＯＯＨ）およびｎ＝１０のＨＯＯＣ－（ＣＨ２）１０－ＣＯＯＨ、等が挙げられる。
　フェノール性水酸基を備えるフラックス活性化合物としては、フェノール類が挙げられ、具体的には、例えば、フェノール、ｏ－クレゾール、２，６－キシレノール、ｐ－クレゾール、ｍ－クレゾール、ｏ－エチルフェノール、２，４－キシレノール、２，５キシレノール、ｍ－エチルフェノール、２，３－キシレノール、メジトール、３，５－キシレノール、ｐ－ターシャリブチルフェノール、カテコール、ｐ－ターシャリアミルフェノール、レゾルシノール、ｐ－オクチルフェノール、ｐ－フェニルフェノール、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＡＦ、ビフェノール、ジアリルビスフェノールＦ、ジアリルビスフェノールＡ、トリスフェノール、テトラキスフェノール等のフェノール性水酸基を含有するモノマー類、フェノールノボラック樹脂、ｏ－クレゾールノボラック樹脂、ビスフェノールＦノボラック樹脂、ビスフェノールＡノボラック樹脂、等が挙げられる。
　上述したようなカルボキシル基、または、フェノール水酸基のいずれか、あるいは、カルボキシル基およびフェノール水酸基の両方を備える化合物は、エポキシ樹脂のような熱硬化性樹脂との反応で三次元的に取り込まれる。
　そのため、硬化後のエポキシ樹脂の三次元的なネットワークの形成を向上させるという観点からは、フラックス活性化合物としては、フラックス作用を有し、かつ、エポキシ樹脂の硬化剤として作用するフラックス活性硬化剤が好ましい。
　フラックス活性硬化剤としては、例えば、１分子中に、エポキシ樹脂に付加することができる二つ以上のフェノール性水酸基と、フラックス作用（還元作用）を示す芳香族に直接結合した一つ以上のカルボキシル基とを備える化合物が挙げられる。
　このようなフラックス活性硬化剤としては、２，３－ジヒドロキシ安息香酸、２，４－ジヒドロキシ安息香酸、ゲンチジン酸（２，５－ジヒドロキシ安息香酸）、２，６－ジヒドロキシ安息香酸、３，４－ジヒドロキシ安息香酸、没食子酸（３，４，５－トリヒドロキシ安息香酸）等の安息香酸誘導体；１，４－ジヒドロキシ－２－ナフトエ酸、３，５－ジヒドロキシ－２－ナフトエ酸、３，７－ジヒドロキシ－２－ナフトエ酸等のナフトエ酸誘導体；フェノールフタリン；およびジフェノール酸、等が挙げられ、これらは一種単独、または、二種以上を組み合わせでもよい。
　なかでも、第一端子１１および第二端子２１の接合を良好なものとするためには、フェノールフタリンを使用することが特に好ましい。フェノールフタリンを使用することで、半田層１１２の表面の酸化物を除去した後、エポキシ樹脂を硬化することが可能となると推測される。
　従って、半田層１１２表面の酸化物が除去されないまま、エポキシ樹脂が硬化してしまうことを抑制でき、第一端子１１および第二端子２１の半田接合を良好なものとすることができる。
　また、樹脂層３中、フラックス活性硬化剤の配合量は、１～３０重量％が好ましく、３～２０重量％が特に好ましい。樹脂層３中のフラックス活性硬化剤の配合量が、上記範囲であることにより、樹脂層のフラックス活性を向上させることができるとともに、樹脂層中に、熱硬化性樹脂と未反応のフラックス活性硬化剤が残存するのが防止される。
　なお、未反応のフラックス活性硬化剤が残存すると、マイグレーションが発生する。また、樹脂層３は、無機充填材を含んでいてもよい。樹脂層３中に無機充填材を含有させることで、樹脂層３の最低溶融粘度を高め、第一端子１１および第二端子２１間に隙間が形成されてしまうことを抑制できる。
　なお、樹脂層３の最低溶融粘度が非常に低い場合には、樹脂層３の流動性が非常に高くなり、第一端子１１と第二端子２１との間に、樹脂層３が入り込み、第一端子１１と第二端子２１とが離間してしまうことがある。
　ここで、無機充填材としては、シリカや、アルミナ、等が挙げられる。さらに、樹脂層３は、硬化触媒を含んでいてもよい。硬化触媒は、樹脂層３中の熱硬化性樹脂の種類に応じて適宜選択できるが、例えば、塗膜成形性向上の観点から、イミダゾール化合物を使用することができる。
　イミダゾール化合物として、２－フェニルヒドロキシイミダゾール、２－フェニル－４－メチルヒドロキシイミダゾール、等が挙げられる。
　また、硬化触媒の配合比は、樹脂層３の構成成分の合計を１００としたときに、例えば０．０１重量％以上５重量％以下とする。硬化触媒の配合比を０．０１重量％以上とすることにより、硬化触媒としての機能をさらに効果的に発揮させて、樹脂層３の硬化性を向上させることができる。また、硬化触媒の配合比を５重量％以下とすることにより、樹脂層３の保存性をさらに向上させることができる。
　第一電子部品１と、第二電子部品２との間に樹脂層３を配置する方法としては、例えば、
（１）フラックス活性化合物を含有する樹脂組成物をフィルム状に成形した樹脂フィルムを用意し、この樹脂フィルムを、第一電子部品１、または、第二電子部品２にラミネートする方法、
（２）フラックス活性化合物を含有する液状の樹脂組成物を用意し、この液状の樹脂組成物を、第一電子部品１、または、第二電子部品２の表面に塗布する方法、
（３）フラックス活性化合物を含有する樹脂組成物が溶剤に溶解、または、分散されている樹脂ワニスを用意し、この樹脂ワニスを、第一電子部品１、または、第二電子部品２の表面に塗布（スピンコート）し、次いで、樹脂ワニス中の溶剤を揮発させる方法、
が挙げられる。なお、方法（２）に係る液状の樹脂組成物は、溶剤を含有しない。
　ここで、図６に示すように、樹脂層３は複数連なっており、複数の第一電子部品１上にまたがる１枚の樹脂シートを構成している。より詳細に説明すると、樹脂シートは複数の樹脂層３と、樹脂層３同士を連結している連結部分とで構成され、樹脂層３同士は連結部分を介して連なっている。なお、積層体４の樹脂層３は、半硬化（Ｂステージ）の状態である
　次に、位置あわせが終わった複数の積層体４を加熱しながら、複数の積層体４の積層方向に沿って挟圧し、図３に示すように、第一端子１１と第二端子２１とが接触するように第二端子２１を樹脂層３に、めり込ませる。この工程では積層体４は樹脂層３の熱硬化性樹脂の硬化温度未満に加熱される。本工程では、第一端子１１の半田層１１２により、第一端子１１と第二端子２１とが半田接合されることはない。また、本工程では、第一電子部品１および第二電子部品２は半硬化状態の樹脂層３を介して接着されることとなる。
　なお、本実施形態では、この工程を２工程で実施する。具体的には、積層体４を熱硬化性樹脂の硬化温度未満で加熱しながら、脱気を行い、減圧下（大気圧未満）で挟圧部材５３で積層体４を挟んで積層体４を積層方向に沿って加圧する第一工程と、積層体４を第一工程よりも高い温度であり、熱硬化性樹脂の硬化温度未満の温度で加熱しながら、大気圧以上の雰囲気下で、挟圧部材５３で積層体４を挟んで積層体４を積層方向に沿って加圧し、第一端子１１と第二端子２１とを接触させる第二工程とを実施する。
　ここで、熱硬化性樹脂の硬化温度とは、樹脂層３の硬化温度であり、たとえばＤＳＣ（Differential Scanning Calorimeter：示差走査熱量計）を用い、昇温速度１０℃／分で樹脂層を測定した際の発熱ピーク温度とする。
　はじめに第一工程について説明する。この工程では、図４～図５に示す装置５を使用する。
　この装置５は、複数の積層体４を同時に挟圧する挟圧部材である冶具５３を備える。より詳細に説明すると、装置５は、内部に複数の積層体４が配置される炉（加熱炉）５１と、炉５１内に配置される上熱板５２１、下熱板５２２と、冶具５３と、炉５１内の気体（空気）を吸引する吸引手段（気圧調整手段）５４とを備える。
　炉５１は、上型５１１と、下型５１２とで構成され、上型５１１と下型５１２とで構成される空間内に上熱板５２１、下熱板５２２が配置される。上熱板５２１、下熱板５２２は、対向配置され、上熱板５２１と下熱板５２２との間には、冶具５３（挟圧部材）および複数の積層体４が配置される。一対の熱板５２１，５２２は半田層１１２の融点未満かつ樹脂層３の熱硬化性樹脂の硬化温度未満の温度となっている。
　冶具５３は、溝が形成された上側加圧部材５３１および平板状の下側加圧部材５３２を備える。上側加圧部材５３１および下側加圧部材５３２間に複数の積層体４が配置される。上側加圧部材５３１は、板状であり、平面矩形形状である。
　上側加圧部材５３１には、図６，７にも示すように、複数の溝５３１Ａが形成されており、一部の溝同士５３１Ａが交差している。本実施形態では、溝５３１Ａが格子状に形成されている。
　溝５３１Ａで区画された領域５３１Ｂが積層体４の第二電子部品２に当接する。一つの領域５３１Ｂに対し一つの積層体４の第二電子部品２が当接する。下側加圧部材５３２は、平面矩形形状であり、下側加圧部材５３２には溝は形成されておらず、表面が平坦な板材で構成されている。
　下側加圧部材５３２と、上側加圧部材５３１の溝５３１Ａが形成された面とは、対向している。下側加圧部材５３２には、積層体４の第一電子部品１が当接する。ここで、下側加圧部材５３２、上側加圧部材５３１の材料としては、特に制限されず、金属板、セラミック板、等が挙げられる。
　金属板としては、例えば、ステンレス板、チタン板、鉛板が挙げられる。また、セラミック板としては、ガラス板、アルミナ板、窒化ケイ素板、ジルコニア板が挙げられる。ただし、熱伝導性の良好なものが好ましい。
　次に、装置５の使用方法について説明する。はじめに、炉５１外の大気圧中で、図６に示すように、冶具５３の上側加圧部材５３１および下側加圧部材５３２間に複数の積層体４を配置し、上側加圧部材５３１および下側加圧部材５３２で複数の積層体４をはさむ。
　このとき、図６に示すように、溝５３１Ａの幅Ｗ１（溝５３１Ａの延在方向と直交する方向の長さ）は、隣接する積層体４間の隙間Ｗ２よりも大きい。言い換えると、溝５３１Ａで区画された上記領域５３１Ｂに当接する第二電子部品２の端面（側面）が、溝５３１Ａの側面５３１Ｃよりも溝５３１Ａ内側に突出している。上述のように上側加圧部材５３１の幅Ｗ１の溝５３１Ａで区画された領域５３１Ｂは、第二電子部品２の第二端子２１より外側に位置する形状に形成されている。
　また、隣接する積層体４のうち、樹脂層３同士は連なって形成されているが、隣接する第二電子部品２間には空隙が形成されているため、上記空隙から樹脂層３が連なることで構成される樹脂シートの一部が露出することとなる。樹脂シートの露出部分は、溝５３１Ａと対向する。
　次に、炉５１内に冶具５３および複数の積層体４を搬送する。炉５１内に冶具５３および複数の積層体４を搬送する際には、搬送フィルム等を使用してもよい。
　ここで、あらかじめ、上熱板５２１、下熱板５２２は加熱された状態となっている。上熱板５２１、下熱板５２２の温度は樹脂層３の硬化温度未満である。なお、炉５１内の気体を吸引し、所定の圧力下となった状態で、上熱板５２１、下熱板５２２を加熱してもよい。
　その後、上型５１１を下型５１２側に移動させて、上型５１１および下型５１２間の隙間を閉じる。冶具５３の下側加圧部材５３２は、下熱板５２２が当接することとなる（図４参照）。
　次に、炉５１内の気体を吸引手段５４により吸引し、脱気を開始し、大気圧未満の減圧下とする。たとえば、炉５１内の雰囲気を真空下（たとえば、１０ｈＰａ以下）とする。なお、炉５１内の気圧の下限値は特に限定されないが、炉５１の耐久性等を考慮すると０．１ｈＰａ以上であることが好ましい。
　その後、図５に示すように、炉５１内の気体を吸引し続け、減圧下とした状態のまま、上熱板５２１を下方に移動させ、上熱板５２１を冶具５３の上側加圧部材５３１に当接させる。その後、積層体４が所定の温度（樹脂層３の硬化温度未満）となった際に、上熱板５２１を上側加圧部材５３１側にさらに、押し当てて、積層体４を加圧する。冶具５３の上側加圧部材５３１は上熱板５２１により下方に押され、冶具５３は、下熱板５２２と上熱板５２１とで挟圧され、冶具５３の上側加圧部材５３１、下側加圧部材５３２により、複数の積層体４が挟圧されることとなる。
　このとき、樹脂層３の硬化温度未満であり、樹脂層３の粘度が１０Ｐａ・ｓ以上、１００００Ｐａ・ｓ以下となるように、上熱板５２１および下熱板５２２で積層体４を加熱し、この温度に達した際に、積層体４を挟圧することが好ましい。なかでも、１０Ｐａ・ｓ以上、１００Ｐａ・ｓ以下となることが好ましい。なお、樹脂層３の粘度が１０Ｐａ・ｓ以上、１００００Ｐａ・ｓ以下となる温度は、以下のように測定できる。
　あらかじめ、樹脂層３の粘度が１０Ｐａ・ｓ以上、１００００Ｐａ・ｓ以下となる温度を把握しておく。次に、樹脂層３の中へ埋め込むように熱電対を挿入し、外部データロガーへ出力することで、樹脂温度を測定し、測定した温度が、１０Ｐａ・ｓ以上、１００００Ｐａ・ｓ以下となる温度かどうか判定すればよい。
　なお、所定の粘度となる温度は、以下のように把握できる。樹脂層３を動的粘弾性測定装置Ｒｈｅｏ Ｓｔｒｅｓｓ ＲＳ１５０（ＨＡＡＫＥ製）にセットする。プレート間ギャップは５０μｍ、周波数０．１Ｈｚ、昇温速度１０℃／分にて、２５℃から昇温し、前述した特定の粘度となる温度を把握する。
　また、樹脂層３の温度は、樹脂層３を構成する熱硬化性樹脂の種類等にもよるが、たとえば、６０℃以上、１５０℃以下であることが好ましい。
　また、第一工程で、積層体４は積層方向に沿って加圧されることとなるが、その加圧力は、０．０１ＭＰａ以上、０．１ＭＰａ以下であることが好ましい。
　この第一工程では、積層体４が挟圧されることで、第一端子１１および第二端子２１が樹脂層３内にめり込み始めるが、第一端子１１および第二端子２１間には樹脂層３が介在している。第一端子１１および第二端子２１は全く接触していなくてもよく、また、第一端子１１の一部および第二端子２１の一部間には樹脂層３が介在し、かつ、第一端子１１の他の一部および第二端子２１の他の一部が接触していてもよい。第一工程で、積層体４は、積層方向に沿って加圧されることとなるが、その加圧力は、第二工程で積層体４にかかる圧力（挟圧力）よりも低い。第一工程では、第二工程に比べ樹脂層３の粘度が高いので、第一工程での積層体４にかかる加圧力（挟圧力）を、第二工程での加圧力より小さくすることで、第一端子１１、第二端子２１の損傷を抑制することができる。
　その後、吸引手段５４による炉５１内の気体の吸引を停止し、図示しない外気導入弁を開放して、炉５１内に外気をいれ、大気圧下とする。その後、上型５１１、下型５１２を離間して、炉５１内から、複数の積層体４を搬出する。
　次に、図８に示す装置７を使用して、前述した第二工程を実施する。この第二工程では、第一端子１１および第二端子２１間に存在する樹脂層３を排除して、第一端子１１および第二端子２１を接触させる。
　装置７は、吸引手段５４を有していない。他の点は、装置５と同じである。
　第一工程と同じように、炉５１内に冶具５３にはさまれた複数の積層体４を搬送する。
　あらかじめ、上熱板５２１、下熱板５２２は加熱された状態となっている。上熱板５２１、下熱板５２２の温度は樹脂層３の硬化温度未満であるが、装置５の上熱板５２１、下熱板５２２の温度の温度よりも高い温度となっている。
　その後、上型５１１を下型５１２側に移動させて、上型５１１および下型５１２間の隙間を閉じる。冶具５３の下側加圧部材５３２は、下熱板５２２が当接することとなる（図４参照）。
　次に、図８に示すように、炉５１内を大気圧下とした状態で、上熱板５２１を下方に移動させ、上熱板５２１を冶具５３の上側加圧部材５３１に当接させる。冶具５３の上側加圧部材５３１は上熱板５２１により下方に押され、冶具５３は、下熱板５２２と上熱板５２１とで挟圧され、冶具５３の上側加圧部材５３１、下側加圧部材５３２により、複数の積層体４が挟圧されることとなる。
　複数の積層体４を挟圧する際には、樹脂層３の硬化温度未満であり、樹脂層３の粘度が第一工程における樹脂層３の粘度（挟圧時の粘度）より低い粘度となるように、上熱板５２１および下熱板５２２で積層体４を加熱することが好ましい。樹脂層３の粘度が５Ｐａ・ｓ以下、１Ｐａ・ｓ以上となった時点（温度）で挟圧することがより好ましい。樹脂層３の粘度を５Ｐａ・ｓ以下とすることで、端子１１，２１間に樹脂が挟まってしまうことを防止できる。また、１Ｐａ・ｓ以上とすることで、積層体４の取り扱い性に優れたものとすることができる。
　なお、樹脂層３の粘度が５Ｐａ・ｓ以下、１Ｐａ・ｓ以上となる温度は、以下のように測定できる。
　あらかじめ、樹脂層３の粘度が５Ｐａ・ｓ以下、１Ｐａ・ｓ以上となる温度を把握しておく。次に、樹脂層３の中へ埋め込むように熱電対を挿入し、外部データロガーへ出力することで、樹脂温度を測定し、測定した温度が、５Ｐａ・ｓ以下、１Ｐａ・ｓ以上となる温度かどうか判定すればよい。
　なお、所定の粘度となる温度は、以下のように把握できる。樹脂層３を動的粘弾性測定装置Ｒｈｅｏ Ｓｔｒｅｓｓ ＲＳ１５０（ＨＡＡＫＥ製）にセットする。プレート間ギャップは５０μｍ、周波数０．１Ｈｚ、昇温速度１０℃／分にて、２５℃から昇温し、前述した特定の粘度となる温度を把握する。
　また、樹脂層３の温度は、樹脂層３を構成する熱硬化性樹脂の種類等にもよるが、たとえば、１２０℃以上、硬化温度未満であり、第一工程の加熱温度よりも３０℃以上、１４０℃以下高いことが好ましい。
　これにより、端子間の樹脂層３を確実に排除することができ、端子同士の接続不良の発生を抑制することができる。
　また、第二工程で、積層体４は、積層方向に沿って加圧されることとなるが、その加圧力は、第一工程で積層体４にかかる圧力よりも高いことが好ましく、たとえば、０．２ＭＰａ以上、１ＭＰａ以下であることが好ましい。これにより、第一端子１１および第二端子２１間に存在する樹脂層３を排除して、第一端子１１および第二端子２１を確実に接触させることができる。
　その後、上型５１１、下型５１２を離間して、炉５１内から、複数の積層体４を搬出する。
　なお、装置７は、炉５１内を大気圧を超える圧力雰囲気下とするための、気圧調整手段を備えていてもよい。気圧調整手段は、炉５１内に流体、たとえば、気体を導入し、炉５１内の雰囲気を、大気圧を超えるものとする。そして、第二工程において、積層体４を第一工程よりも高い温度であり、前記熱硬化性樹脂の硬化温度未満の温度で加熱しながら、大気圧を超える雰囲気下で、積層体４を積層方向に沿って加圧してもよい。
　その後、図９に示す装置６を使用して、複数の積層体４を第一端子１１の半田層１１２の融点以上に加熱して、第一端子１１と、第二端子２１とを半田接合させる。
　装置６は、積層体４を加圧雰囲気下で加熱することができるもので、構造としては、例えば、積層体４を内部に収容する容器６１と、この容器６１内に流体を導入するための配管６２とを有する。
　容器６１は圧力容器であることが特徴で、容器６１内に積層体４を設置したのち、配管６２から加熱し、さらに加圧した流体を容器６１内へ流入させることにより、積層体４を加熱加圧することとなる。
　また、配管６２から流体を容器６１内へ流入させ、加圧雰囲気下にしつつ、容器６１を加熱することにより、積層体４を加熱することもできる。容器６１の材料としては、金属があげられ、例えば、ステンレス、チタン、銅、これらの合金等である。
　流体により、積層体４を加圧する際の加圧力は、０．１～１０ＭＰａ、好ましくは０．５～５ＭＰａである。このようにすることで、硬化した樹脂層３中に空隙（ボイド）が発生し難くなる。
　なお、本発明において、流体で加圧するとは、積層体４の雰囲気の圧力を、大気圧より加圧力分だけ高くすることを指す。すなわち、加圧力１０ＭＰａとは、大気圧よりも、積層体に作用する圧力が１０ＭＰａ大きいことを示す。
　容器６１内に積層体４を設置した後、積層体４が加熱されるとともに、積層体４が加圧される。積層体４を加圧する流体は、配管６２から容器６１内に導入され、積層体４を加圧することとなる。積層体４を加圧する流体としては、窒素ガス、アルゴンガス等の非酸化性ガス、空気等のガスが好ましい。
　なかでも、非酸化性ガスを使用することが好ましい。非酸化性ガスを使用することで、第一端子１１および第二端子２１の接合をより良好なものとすることができる。なお、非酸化性ガスとは、不活性ガス、窒素ガスのことを意味する。
　積層体４の温度が半田層１１２の融点以上に達した後、容器６１内の温度および圧力を保ちながら、所定時間、積層体４を、加熱および加圧する。これにより、積層体４中の樹脂層３が硬化することとなる。
　その後、装置６から積層体４を取り出し、必要に応じて積層体４を再度硬化させる。以上により、電子装置を得ることができる（図１０参照）。図１０では、第一端子１１と第二端子２１とが半田層１１２により接合され、第二端子２１の先端が、半田層１１２に食い込んだ状態となっている。なお、図６で示した点線の切断ラインに従い、第一電子部品１間、樹脂層３間を切断することで、分離した複数の電子装置を得ることができる。
　次に、本実施形態の作用効果について説明する。
　積層体４を得る工程の第一工程において、積層体４を構成した後、積層体４を所定の温度で加熱しながら、脱気を行っている。この脱気により、第一電子部品１と樹脂層３との界面に存在する気泡、樹脂層３中に存在する気泡、樹脂層３と第二電子部品２との界面に存在する気泡を取り除くことができる。このように第一工程で気泡が取り除かれるため、第一工程において、前記気泡が膨張し樹脂層３の樹脂が挟圧部材５３に付着することも抑制できる。
　また、積層体４を得る工程の第二工程においては、積層体４を第一工程の加熱温度を超える温度で加熱している。このように積層体４の加熱温度が異なる２つの工程を設けることで、第二工程で加熱温度を第一工程よりも高温とすることができ、樹脂層３の流動性を高め、第一端子１１および第二端子２１間に存在する樹脂を排除することができる。
　また、第一工程の加熱温度を低温とすれば、樹脂層３の粘度を比較的高いままとすることができるので、樹脂層３により、残存する気泡の発泡を確実に抑制できる。たとえば、第一工程において、樹脂層３の粘度が１０Ｐａ・ｓ以上となるように樹脂層３を加熱することで、気泡の発泡を確実に抑制できる。
　なお、樹脂層３の粘度を１００００Ｐａ・ｓ以下となるように樹脂層３を加熱すれば、樹脂層３に端子１１，２１を容易に食い込ませることができる。
　また、第二工程では、第一工程よりも高温度で積層体４を加熱するが、第一工程にて気泡が除去されているので、第二工程で樹脂層３の粘度が低下しても、樹脂層３の樹脂が挟圧部材５３に付着することが抑制できる。これに加え、積層体４を得る工程の第二工程は、大気圧以上の雰囲気下で実施されている。そのため、第一工程において脱気しきれなかった気泡が存在する場合でも、気泡の膨張を抑制することができ、樹脂層３の樹脂が挟圧部材５３に付着することが抑制できる。
　なお、第二工程では第一工程よりも高温で積層体４を加熱しているので、第二工程を減圧下で実施してしまうと気泡が膨張しやすくなり、樹脂層３の樹脂が挟圧部材５３に付着しやすくなってしまう。
　以上のように、本実施形態の製造方法によれば、樹脂層３の樹脂が挟圧部材５３に付着してしまうことを抑制できるので電子装置の生産性を向上させることができる。
　本実施形態では、前述したように、積層体４を形成する工程において、雰囲気圧力および加熱温度の異なる２つの工程で実施している。これに対し、積層体４を形成する工程を一定の雰囲気圧力および加熱温度の１工程で実施しようと考えた場合、以下のような問題点が生じる。
　端子１１，２１間に樹脂が残存してしまうことを防止するためには、通常、はじめから積層体４を本実施形態の第二工程と同程度の温度で加熱しようと考える。この場合、減圧してしまうと気泡が膨張しやすくなり、樹脂層３の樹脂が挟圧部材５３に付着しやすくなってしまう。
　一方で、第二工程と同程度の加熱温度で積層体４を加熱しながら、大気圧下で実施すると、気泡が多数ある状態で加熱することとなるので大気圧下であっても発泡が抑制できない。
　これに対し、本実施形態は、雰囲気圧力および加熱温度の異なる２つの工程を採用したものであり、これにより、樹脂層３の樹脂の挟圧部材５３への付着を防止でき、かつ、端子間の樹脂を確実に排除して、接続信頼性の高い電子装置を得ることができるのである。
　さらに、本実施形態では、第一工程において、炉５１内を真空としている。これにより、積層体４中の気泡を確実に脱気することができる。
　また、本実施形態では、第二工程において、炉５１内を大気圧としている。そのため、装置７の構造を複雑化せずに第二工程を実施することができ、電子装置の製造コストを低減させることができる。
　また、本実施形態では、積層体４を挟圧する上側加圧部材５３１に溝５３１Ａを形成している。積層体４を挟圧する際に、積層体４の樹脂層３が積層体４からはみ出したとしても、はみ出した樹脂層３を溝５３１Ａ内に逃がすことができる。これにより、第二電子部品２と上側加圧部材５３１との間に樹脂が入り込んでしまうことが防止できる。
　さらに、本実施形態では、溝５３１Ａで区画された上記領域５３１Ｂに当接する第二電子部品２の端面が、溝５３１Ａの側面５３１Ｃよりも溝５３１Ａ内側に突出している。　積層体４を挟圧する際に、積層体４からはみ出した樹脂が、積層体４の第二電子部品２の端面に沿って這い上がってくることがある。溝５３１Ａの側面５３１Ｃが、第二電子部品２の端面よりも、溝５３１Ａ内側に突出していないため、第二電子部品２の端面を這い上がってくる樹脂が上側加圧部材５３１に付着してしまうことを抑制できる。そのため、上側加圧部材５３１の樹脂による汚染を防止することができる。
　また、上側加圧部材５３１に溝５３１Ａを形成しない場合には、積層体４からはみ出した樹脂が上側加圧部材に付着してしまい上側加圧部材の積層体４側の面が平坦なものでなくなる可能性がある。そのため、積層体４に作用する荷重にばらつきが生じることがある。これに対し、本実施形態では、前述したように上側加圧部材５３１への樹脂の付着を防止できるので、積層体４に作用する荷重のばらつきの発生を抑制することができる。
　なお、本発明は前述の実施形態に限定されるものではなく、本発明の目的を達成できる範囲での変形、改良等は本発明に含まれるものである。
　たとえば、前記実施形態では、第一電子部品１同士、樹脂層３同士が連なっていたが、これに限られるものではない。例えば、あらかじめ第一電子部品１同士、樹脂層３同士が分離しており、第一電子部品１間、樹脂層３間に隙間（空隙）があってもよい。
　さらに、上記形態では、第二電子部品２に上側加圧部材５３１を当接させていたが、これに限られるものではなく、第一電子部品１に上側加圧部材５３１を当接させてもよい。
　また、一方の積層体４においては、第一電子部品１に上側加圧部材５３１が当接するようにし、他方の積層体４においては、第二電子部品２に上側加圧部材５３１が当接するようにしてもよい。ただし、端子同士の接合安定性の観点からは、上記形態のように、上側加圧部材５３１に接触する部品は同じ部品であることが好ましい。
　さらに、前記実施形態では、治具５３を使用して積層体４を挟圧していたが、挟圧部材として、上熱板、下熱板を使用し、直接積層体４を挟圧してもよい。また、上熱板と、炉５１の底面とで積層体４を挟圧してもよい。
　また、前記実施形態では、装置５を使用して第一工程を実施し、装置７を使用して第二工程を実施していたが、これに限らず、ひとつの装置を使用して第一工程、第二工程を実施してもよい。たとえば、装置５を使用し、炉内を真空にし第一工程を実施した後、減圧解除し、大気圧まで戻して、さらに高温で積層体４を加熱して第二工程を実施してもよい。
　さらに、前記実施形態では、第一電子部品１が半田層を有していたが、これに限らず、第二電子部品も半田層を有していても良い。
　この出願は、２０１０年８月２４日に出願された日本特許出願特願２０１０－１８６８７４を基礎とする優先権を主張し、その開示をすべてここに取り込む。
　次に、本発明の実施例について説明する。
（実施例１）
　（樹脂層３の作製）
　フラックス活性化合物としてフェノールフタリン（東京化成株式会社製）１５重量部と、フェノールノボラック樹脂としてＰＲ－５３４６７（住友ベークライト株式会社製）１５重量部と、エポキシ樹脂としてＥＯＣＮ‐１０２０７０（日本化薬株式会社製）５０重量部と、フェノキシ樹脂としてＹＰ－５０（東都化成株式会社製）２０重量部と、シランカップリング剤としてＫＢＭ－３０３（信越シリコーン株式会社製）１．０重量部と、イミダゾール化合物として２Ｐ４ＭＺ（四国化成株式会社製）０．１重量部とをアセトンに溶解し、ワニス状の樹脂組成物を作製した。
　上記で得られたワニス状の樹脂組成物を、ポリエステルシート（基材）にコンマコータを用いて塗布し、上記アセトンが揮発する温度１００℃で３分間乾燥させて、基材上に形成された厚み２５μｍのフィルム状の樹脂層３を得た。
（電子装置の作製）
　基材上に形成されたフィルム状の樹脂層３を、回路基板（第一電子部品１）の半田バンプ（半田層１１２）が形成された面に、真空ラミネータを用い、温度：１００℃、０．７ＭＰａの条件でラミネートし、次いで、基材を剥離した。
　次に、回路基板の第一端子１１と半導体チップ（第二電子部品２）の第二端子２１が対向するように位置合わせした。その後、前記実施形態と同様に、第一工程、第二工程を実施した。まず、冶具５３で複数の積層体４をはさみ、装置５の炉５１内に設置した。そして、炉５１内の気体を吸引して、真空（１ｈＰａ）とするとともに、真空下で積層体４を８０℃（熱硬化温度未満）まで加熱した。一対の熱板５２１，５２２により冶具５３をはさむことで、積層体４は加熱されて、８０℃となった（このときの樹脂層３の粘度は１０．３Ｐａ・ｓであり、測定方法は前記実施形態で述べた方法である）。そして、真空下、８０℃で２８０秒間積層体４を加熱加圧した。積層体４の積層方向に沿って積層体４にかかる挟圧力は、０．０５ＭＰａであった（第一工程）。なお、第一工程では、端子１１，２１同士間には樹脂層が介在していた。
　次に、積層体４を装置５から取り出した。その後、冶具５３で複数の積層体４をはさみ、装置７の炉５１内に設置した。そして、積層体４を１５０℃（熱硬化温度未満）まで加熱した。一対の熱板５２１，５２２により冶具５３をはさむことで、積層体４は加熱されて、１５０℃となった（このときの樹脂層３の粘度は２．１Ｐａ・ｓであり、測定方法は前記実施形態で述べた方法である）。そして、大気圧下、１５０℃で５００秒間積層体４を加熱加圧した。積層体４の積層方向に沿って積層体４にかかる挟圧力は、０．５ＭＰａであった（第二工程）。この第二工程においては、端子１１，２１間の樹脂が排除され、端子１１，１２同士が直接接触した。
　その後、積層体４を装置７から取り出した。
　次に、前記実施形態と同様に、装置６を使用して第一端子および第二端子を半田接合するとともに、樹脂層３を硬化した。
　まず、装置６の容器６１をあらかじめ１００℃に加熱しておき、その後、容器６１内に積層体４を配置した。そして、容器６１内に流体（空気）を送り、加圧力０．５ＭＰａで加圧しつつ、積層体４を半田層１１２の融点（２２５℃）まで加熱した。その後、容器６１内に積層体４を配置した状態で、流体からの加圧力を０．５ＭＰａとし、１８０℃に降温し、６０分間、積層体４を加熱加圧した。
（実施例２）
（樹脂層３の作製）
　樹脂層３の製造方法を以下に示す。
　エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂ＥＯＣＮ－１０２０７０（日本化薬（株）社製）４５重量部と、フェノールノボラック樹脂としてＰＲ－５３４６７（住友ベークライト（株）社製）１５重量部と、フェノキシ樹脂として、ＹＰ－５０（東都化成（株）社製）を１５重量部と、フラックス作用を有する化合物としてフェノールフタリン（東京化成（株）社製）１５重量部と、シランカップリング剤としてＫＢＭ－３０３（信越シリコーン（株）社製）１．０重量部と、イミダゾール化合物として２Ｐ４ＭＺ（四国化成（株）社製）０．０５重量部とをアセトンに溶解し、さらに、フィラー（アドマテックス社製、ＳＥ６０５０、平均粒径２μｍ）を１０重量部添加して、ワニス状の樹脂組成物を作製した。
　上記で得られたワニス状の樹脂組成物を、ポリエステルシート（基材）にコンマコータを用いて塗布し、上記アセトンが揮発する温度１００℃で３分間乾燥させて、基材上に形成された厚み２５μｍのフィルム状の樹脂層３を得た。
（電子装置の作製）
　得られた樹脂層３を使用して電子装置を製造した。製造方法は実施例１と同様であり、第一工程で積層体４が加熱されて、８０℃となった時点での樹脂層３の粘度は、１０．３Ｐａ・ｓであり、第二工程で積層体４が加熱されて、１５０℃となった時点での樹脂層３の粘度は、２．１Ｐａ・ｓであった。
（比較例１）
　実施例１の第一工程を実施しなかった点以外は、実施例１と同様にして電子装置を作成した。
（比較例２）
　実施例１と同様に第一工程を実施した。第二工程において大気圧下ではなく、真空下で積層体を加熱した点以外は、実施例１と同様にして電子装置を作成した。
（評価）
（治具への樹脂の付着）
　各実施例、各比較例で使用した治具５３を観察したところ、実施例１,２では、治具５３への樹脂の付着はなかった。
　これに対し、比較例１，２では、治具５３に樹脂が付着していることがわかった。
　したがって、実施例の製造方法の方が、比較例に比べて生産性に優れていることがわかる。
（樹脂噛み）
　各実施例、比較例で得られた半導体装置の半導体素子の端子および基板の端子間を金属顕微鏡にて観察した。実施例１,２では、端子間に樹脂が残存しておらず、半導体素子と基板との接続信頼性に優れるものとなっていた。
　これに対し比較例１，２では、端子間に樹脂が存在していた。

Claims (6)

  1. 　表面に半田層を有する第一端子を有する第一電子部品と、この第一電子部品の前記第一端子に接合される第二端子を有する第二電子部品とを備える電子装置の製造方法であって、
    　前記第一電子部品の第一端子と、前記第二電子部品の第二端子との間にフラックス活性化合物と熱硬化性樹脂とを含む樹脂層を配置して積層体を得る工程と、
    　前記積層体を前記第一端子の前記半田層の融点以上に加熱して、前記第一端子と、前記第二端子とを半田接合させる工程と、
    　流体により前記積層体を加圧しながら、前記樹脂層を硬化させる工程とを含み、
    　積層体を得る前記工程は、
    　前記第一電子部品と前記第二電子部品との間に前記樹脂層を配置した前記積層体を前記熱硬化性樹脂の硬化温度未満で加熱しながら、脱気を行い、減圧下で挟圧部材で前記積層体を挟んで前記積層体を積層方向に沿って加圧する第一工程と、
    　前記積層体を前記第一工程よりも高い温度であり、前記熱硬化性樹脂の硬化温度未満の温度で加熱しながら、大気圧以上の雰囲気下で、挟圧部材で前記積層体を挟んで前記積層体を積層方向に沿って加圧し、前記第一端子と前記第二端子とを接触させる第二工程とを含む電子装置の製造方法。
  2. 　請求項１に記載の電子装置の製造方法において、
    　前記第一工程においては、前記第一端子と前記第二端子との間に前記樹脂層が介在した状態であり、
    　前記第二工程において、前記第一端子と前記第二端子との間の前記樹脂層を排除して、前記第一端子と前記第二端子とを接触させる電子装置の製造方法。
  3. 　請求項１または２に記載の電子装置の製造方法において、
    　前記第一工程は、真空下で実施され、
    　前記第二工程は、大気圧下で実施される電子装置の製造方法。
  4. 　請求項１乃至３のいずれかに記載の電子装置の製造方法において、
    　積層体を得る前記工程では、前記第一電子部品または前記第二電子部品にフィルム状の前記樹脂層をはりつける、あるいは、前記第一電子部品または前記第二電子部品に前記樹脂層をスピンコートする工程を含む電子装置の製造方法。
  5. 　請求項１乃至４のいずれかに記載の電子装置の製造方法において、
    　積層体を得る前記工程の前記第一工程および前記第二工程において、
    　複数の積層体を一対の前記挟圧部材で挟圧し、
    　前記一対の挟圧部材のうち、一方の挟圧部材は、溝が形成された部材であり、
    　溝が形成された前記部材を前記積層体に当接させた際に、
    　一方の挟圧部材の前記溝で区画された各領域がそれぞれ前記積層体の第一電子部品または第二電子部品に当接し、かつ、前記溝で区画された前記領域に当接する第一電子部品または第二電子部品の端面が、前記溝の側面よりも溝内側に位置する電子装置の製造方法。
  6. 　請求項１乃至５のいずれかに記載の電子装置の製造方法において、
    　前記第一工程における前記挟圧部材からの加圧力は、前記第二工程における前記挟圧部材からの加圧力よりも小さい電子装置の製造方法。
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JP2013239469A (ja) * 2012-04-17 2013-11-28 Sumitomo Bakelite Co Ltd 積層体の製造方法
JP2014049592A (ja) * 2012-08-31 2014-03-17 Renesas Electronics Corp 半導体装置の製造方法
JP2014127477A (ja) * 2012-12-25 2014-07-07 Sumitomo Bakelite Co Ltd 半導体装置の製造方法
WO2014136720A1 (ja) * 2013-03-07 2014-09-12 日東電工株式会社 半導体装置の製造方法及び熱硬化性樹脂シート

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JP2004311709A (ja) * 2003-04-07 2004-11-04 Renesas Technology Corp 半導体装置の製造方法および半導体製造装置
JP2008147601A (ja) * 2006-12-13 2008-06-26 Yoshihiro Shimada フリップチップ接合方法及び半導体装置の製造方法

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CN102668051A (zh) * 2009-10-19 2012-09-12 住友电木株式会社 电子装置的制造方法、电子装置以及制造电子装置的设备

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JP2004311709A (ja) * 2003-04-07 2004-11-04 Renesas Technology Corp 半導体装置の製造方法および半導体製造装置
JP2008147601A (ja) * 2006-12-13 2008-06-26 Yoshihiro Shimada フリップチップ接合方法及び半導体装置の製造方法

Cited By (4)

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Publication number Priority date Publication date Assignee Title
JP2013239469A (ja) * 2012-04-17 2013-11-28 Sumitomo Bakelite Co Ltd 積層体の製造方法
JP2014049592A (ja) * 2012-08-31 2014-03-17 Renesas Electronics Corp 半導体装置の製造方法
JP2014127477A (ja) * 2012-12-25 2014-07-07 Sumitomo Bakelite Co Ltd 半導体装置の製造方法
WO2014136720A1 (ja) * 2013-03-07 2014-09-12 日東電工株式会社 半導体装置の製造方法及び熱硬化性樹脂シート

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