WO2012017505A1 - Elément électroluminescent à semi-conducteur - Google Patents

Elément électroluminescent à semi-conducteur Download PDF

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Publication number
WO2012017505A1
WO2012017505A1 PCT/JP2010/006940 JP2010006940W WO2012017505A1 WO 2012017505 A1 WO2012017505 A1 WO 2012017505A1 JP 2010006940 W JP2010006940 W JP 2010006940W WO 2012017505 A1 WO2012017505 A1 WO 2012017505A1
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face
semiconductor
light emitting
waveguide
light
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PCT/JP2010/006940
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English (en)
Japanese (ja)
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川口真生
山中一彦
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パナソニック株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Definitions

  • the present invention relates to an edge emitting semiconductor light emitting device having a waveguide.
  • semiconductor light emitting devices such as light emitting diode (Light Emitting Diode: LED) devices or semiconductor laser (Laser Diode: LD) devices are used in information technology such as communication and optical disks.
  • LED Light Emitting Diode
  • LD semiconductor laser
  • IT technology In addition to (IT technology), it is used in a wide range of technical fields such as medicine and lighting.
  • a display device using a semiconductor light emitting element as a light source has been actively developed.
  • a light source for such a display device As a light source for such a display device, a light source that efficiently emits light in a so-called visible light region of red light, green light, and blue light having a wavelength of about 420 nm to 700 nm is required.
  • a projection type display device such as a liquid crystal projector
  • the emitted light from the light source has high directivity in order to more efficiently project the light from the light source as an image.
  • semiconductor laser element or a super luminescent diode (SLD) element that emits visible light has been advanced.
  • a semiconductor laser element or an SLD element has an optical confinement structure in which an active layer that efficiently converts injected carriers into light is sandwiched between a light guide layer and a p-type or n-type cladding layer in the stacking direction on the substrate. have. Further, a ridge stripe structure that confines light in the lateral direction (direction parallel to the substrate surface) is formed in the p-type cladding layer on the active layer. The ridge stripe structure is cleaved so as to cleave the ridge stripe structure vertically in order to form reflection mirrors on the front end face and the rear end face at predetermined intervals. In this way, a semiconductor laser element is configured by forming a resonator by cleaving the front and back of the ridge stripe structure to obtain a resonator.
  • the reflectance of each reflecting surface can be adjusted by forming a dielectric multilayer film or the like on the surface of the reflecting surface of the ridge stripe, and the characteristics of the semiconductor laser device or SLD device can be controlled.
  • the reflectance of the front end face is set to 20% or less and the reflectance of the rear end face is set to 90% or more to be emitted from the front end face. The light emission efficiency can be improved.
  • the reflectance of the front end face and the rear end face forming the resonator is asymmetric as described above, a large deviation is caused in the light intensity distribution in the axis (optical axis) direction of the resonator inside the semiconductor laser element. Arise.
  • the light intensity at the front end face is about 1.1 to 2 times higher than the light intensity at the rear end face.
  • the density of carriers injected into the active layer is uniform in the axial direction of the resonator. For this reason, since the carrier density becomes excessive in the vicinity of the rear end face of the active layer, there arises a problem that gain saturation occurs.
  • the conventional semiconductor light emitting device has a ridge stripe structure formed on the top of the semiconductor stack, and has a waveguide 17 constituted by an n-type cladding layer formed in a convex shape. ing.
  • Wf the distance between the front end face and the rear end face
  • Wr the width of the waveguide 17 at the rear end face. It is configured.
  • the light intensity distribution in the vicinity of the front end face where the optical gain saturation is remarkable in the ridge stripe is examined.
  • the light intensity distribution is widened.
  • the inventors of the present application show that the distribution in the waveguide (gain region) has a relatively large light intensity in the central part, but is small in the peripheral part, and the nonuniformity of the light intensity is not sufficiently mitigated. I found a problem.
  • An object of the present invention is to solve the above-described problems and make it possible to increase the light output by making the light intensity distribution in the waveguide more uniform.
  • the present invention has a configuration in which the semiconductor light emitting device is configured to make the light intensity distribution in the horizontal direction (direction perpendicular to the light guiding direction) uniform with respect to the optical resonator.
  • a semiconductor light emitting device includes a semiconductor laminate including a plurality of semiconductor layers having different compositions and including an optical resonator therein, and the optical resonator has a front end surface that emits light.
  • an optical resonator is a refractive light that makes the light intensity distribution in a direction perpendicular to the light guiding direction uniform. It has a rate modulation structure.
  • the optical resonator has a refractive index modulation structure that equalizes the light intensity distribution in the direction perpendicular to the light guiding direction, and thus the light intensity distribution in the waveguide. Can be made uniform, so that the light output can be increased.
  • the refractive index modulation structure is formed at least on the front end face side in the waveguide and in the center in the width direction of the waveguide, and has a refractive index lower than that of the semiconductor laminate constituting the waveguide. You may be comprised by the refractive index layer.
  • the low refractive index layer may be formed so that its width increases toward the front end face.
  • the light intensity distribution in the horizontal direction on the front end face side where the light intensity is high can be effectively uniformed, and the light output can be further increased.
  • the refractive index modulation structure is formed on the front end face, the first reflecting mirror having the convex reflection surface that collects and reflects the light from the rear end face side, and the front end face formed on the rear end face.
  • You may be comprised by at least one of the 2nd reflective mirrors which have the convex reflective surface which condenses and reflects the light from an end surface side.
  • the refractive index modulation structure may include at least a second reflecting mirror, and the second reflecting mirror may have a curvature at the central portion of the reflecting surface larger than that at the peripheral portion.
  • the light intensity distribution in the waveguide can be made more uniform, so that the light output can be increased.
  • the waveguide may be formed so that its width increases from the rear end face side toward the front end face side.
  • the light intensity distribution in the waveguide can be made more uniform, so that the light output can be increased.
  • the semiconductor light emitting device of the present invention may be a super luminescent diode or a laser diode.
  • the semiconductor stacked body may be made of a gallium nitride based semiconductor.
  • a semiconductor light emitting device having a high light output in a wide wavelength range from the ultraviolet region to the infrared region can be realized.
  • the semiconductor light emitting device can make the light intensity distribution in the waveguide more uniform, the light output can be increased.
  • FIG. 1 is a schematic plan view showing a semiconductor light emitting device according to a first embodiment of the present invention.
  • FIG. 2 is a sectional view taken along line II-II in FIG. 3A to 3C show the light intensity distribution and the optical gain distribution in the waveguide
  • FIG. 3A is a diagram showing the case of the conventional uniform waveguide
  • FIG. 3B is a diagram showing a case of a conventional tapered stripe waveguide
  • FIG. 3C is a diagram showing a case of a refractive index modulation waveguide according to the present invention.
  • FIG. 4A is a diagram for comparison, and shows a light intensity distribution and an optical gain distribution in the S1-S1 line in the case of a tapered stripe waveguide
  • FIG. 4A is a diagram for comparison, and shows a light intensity distribution and an optical gain distribution in the S1-S1 line in the case of a tapered stripe waveguide
  • FIG. 4B shows the first embodiment. It is a figure which shows the light intensity distribution and optical gain distribution in S2-S2 line in the case of a refractive index modulation waveguide.
  • 5A and 5B are cross-sectional views in order of steps showing the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.
  • FIG. 6 is a plan view of one process showing the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.
  • FIG. 7 is a plan view of one step showing the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.
  • FIG. 8A and FIG. 8B are cross-sectional views in the order of steps showing the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of one step showing the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention.
  • FIG. 10 is a plan view of one process showing the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.
  • FIG. 11 is a schematic cross-sectional view showing a semiconductor light emitting element according to a first modification of the first embodiment of the present invention.
  • FIG. 12 is a schematic plan view showing a semiconductor light emitting device according to a second modification of the first embodiment of the present invention.
  • FIG. 13 is a schematic plan view showing a semiconductor light emitting element according to the second embodiment of the present invention.
  • FIG. 10 is a plan view of one process showing the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention.
  • FIG. 11 is a schematic cross-sectional view showing a semiconductor light emitting element according to a first modification of the first embodiment of the present invention.
  • FIG. 12 is a schematic plan view showing
  • FIG. 14 is a diagram showing a light intensity distribution and a light gain distribution in the S2-S2 line in the case of the refractive index modulation waveguide according to the second embodiment.
  • FIG. 15A is a graph showing the result of calculating the curvature radius dependence of the convex reflection surface of the light intensity in the semiconductor light emitting device according to the second embodiment of the present invention.
  • FIG. 15B is a graph showing the result of calculating the radius of curvature dependence of the convex reflection surface of the light output in the semiconductor light emitting device according to the second embodiment of the present invention.
  • FIG. 16 is a schematic plan view showing a conventional semiconductor light emitting device.
  • the semiconductor light emitting device 1 is formed on a substrate 101 made of, for example, n-type gallium nitride (GaN).
  • the n-type cladding layer 102, the n-type light guide layer 103, the active layer 104, the p-type light guide layer 105, the p-type cladding layer 106, and the p-type contact layer 107 are sequentially stacked.
  • the n-type cladding layer 102 is made of, for example, AlGaN doped with silicon (Si)
  • the n-type light guide layer 103 is made of, for example, GaN doped with Si.
  • the active layer 104 is, for example, a multiple quantum well layer in which InGaN is used for the well layer and GaN is used for the barrier layer.
  • the n-type light guide layer 105 is made of, for example, GaN doped with magnesium (Mg)
  • the p-type cladding layer 106 is, for example, a superlattice layer of AlGaN and GaN doped with Mg.
  • the p-type contact layer 107 is made of GaN doped with Mg at a high concentration.
  • a ridge stripe structure for forming the waveguide (optical resonator) 117 is formed.
  • the front end face 50 that is the light emitting end face and the rear end face 60 that is the light reflecting end face of the semiconductor light emitting device 1 are formed on the front stripe end face 51 and the rear of the waveguide 117 by etching or the like.
  • Stripe end faces 61 are respectively formed.
  • the stripe width Wf of the front stripe end face 51 and the stripe width Wr of the rear stripe end face 61 have a relationship that the front stripe end face 51 is wider than the rear stripe end face 61, that is, Wf> Wr. .
  • the distance between the front stripe end face 51 and the rear stripe end face 61 is Ls, which is smaller than the distance L between the front end face 50 and the rear end face 60, that is, L> Ls. ing.
  • a groove portion 106a having a V-shaped cross section that gradually decreases in width from the front stripe end face 51 toward the rear stripe end face 61 is formed.
  • the length of the groove 106 a is Lg, and Lg is set to about one half of the length of the substrate 101.
  • the width of the groove 106a at the front stripe end face 51 is Gf.
  • the side and side regions of the ridge stripe structure are covered with an insulating layer 109 made of, for example, SiO 2 and the insulating layer 109 is also filled in the groove 106a.
  • the upper surface of the waveguide 117 is exposed from the insulating layer 109, and, for example, a p-electrode layer 108 which is a laminated film of palladium (Pd) / platinum (Pt) is formed.
  • a p electrode 115 which is a laminated film of titanium (Ti) / gold (Au) is formed.
  • an n electrode 116 which is a laminated film of Ti / Pt / Au is formed.
  • the light intensity on the front end face 50 side is the rear end face 60. It is characterized by being stronger than the side.
  • hole burning that causes a shortage of carriers, particularly holes (holes) necessary for optical amplification occurs, and optical gain saturation that reduces optical gain occurs.
  • the optical output function is reduced as a result of limiting the optical amplification function.
  • the width of the waveguide is widened on the front end face 50 side where the light intensity is high, thereby spreading the guided light and reducing the light intensity to suppress hole burning.
  • a taper stripe structure is known in which the optical gain saturation is reduced to increase the optical output.
  • a groove portion 106a having a V-shaped cross section is provided at the front end face 50 side where the light output is strong and in the center of the waveguide, and the groove portion 106a is formed with III.
  • An insulating layer 109 having a refractive index smaller than that of the group nitride semiconductor is filled. That is, the groove part 106a provided in the upper part of the stripe structure is designed so that a refractive index becomes low compared with the peripheral part.
  • the principal plane has a (0001) plane and is made of hexagonal n-type GaN.
  • an n-type cladding layer 102 made of Al 0.03 Ga 0.97 N having a thickness of 2 ⁇ m and doped with Si is grown.
  • an n-type light guide layer 103 made of GaN doped with Si and having a thickness of 0.1 ⁇ m is grown on the n-type cladding layer 102.
  • n-type light guide layer 103 a multiple layer composed of three periods of a barrier layer made of In 0.02 Ga 0.98 N and a quantum well layer made of In 0.16 Ga 0.84 N is formed.
  • An active layer 104 that is a quantum well layer is grown.
  • a p-type light guide layer 105 made of GaN having a thickness of 0.1 ⁇ m and doped with Mg is grown on the active layer 104.
  • a carrier overflow suppression layer having a thickness of 10 nm and made of Al 0.20 Ga 0.80 N is grown on the p-type light guide layer 105, and the carrier overflow suppression layer A p-type clad layer made of a strained superlattice having a thickness of 0.48 ⁇ m by repeating 160 cycles of an Mg-doped Al 0.16 Ga 0.84 N layer and a GaN layer each having a thickness of 1.5 nm.
  • a p-type contact layer 107 made of p-type GaN having a thickness of 0.05 ⁇ m and highly doped with Mg is grown on the p-type cladding layer 106.
  • the semiconductor stacked body 100 including the n-type cladding layer 102 to the p-type contact layer 107 is formed.
  • trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI), or the like can be used as the group III source, and ammonia (NH 3 ) or the like can be used as the nitrogen source.
  • silane (SiH 4 ) or the like can be used for the Si source that is an n-type dopant
  • Cp 2 Mg biscyclopentadienyl magnesium
  • the crystal growth method for forming the semiconductor stacked body 100 as described above is not limited to the MOCVD method, but is a molecular beam growth (Molecular-Beam-Epity: MBE) method or a chemical beam growth (Chemical-Beam-Epitaxial: CBE) method.
  • a growth method capable of growing a GaN-based semiconductor laser structure, such as, may be used.
  • a ridge stripe structure is formed on the p-type cladding layer 106 to obtain a waveguide 117.
  • heat treatment activation annealing
  • Mg added to each p-type semiconductor layer.
  • a first insulating film (not shown) made of, for example, silicon oxide (SiO 2 ) is formed on the entire surface of the p-type contact layer 107 by, eg, chemical vapor deposition (CVD).
  • the first mask film is formed by patterning the first insulating film so as to cover the waveguide formation region by lithography.
  • the upper portion of the p-type contact layer 107 and the p-type cladding layer 106 is dry-etched with a gas such as chlorine (Cl 2 ), for example, so that the waveguide 117 is formed.
  • the first mask film is removed, and a second insulating film made of SiO 2 or the like is formed again over the entire surface including the ridge stripe structure.
  • a second mask film is formed by lithography to open the groove formation region from the second insulating film.
  • the upper portion of the p-type contact layer 107 and the p-type clad layer 106 is etched by dry etching using the second mask film, and as shown in FIG. 106a is formed.
  • the depth of the groove 106a is preferably 0.05 ⁇ m to 0.45 ⁇ m, and the width is preferably 0.1 ⁇ W to 0.5 ⁇ W, where the width of the ridge stripe is W.
  • openings 118 for forming the front stripe end face 51 and the rear stripe end face 61 of the semiconductor light emitting device 1 are formed on the upper portion of the semiconductor stacked body by dry etching.
  • the side surface to be etched of the semiconductor stacked body is made substantially perpendicular to the main surface of the substrate 101 by adjusting the dry etching pressure and the applied bias.
  • the etching depth is set such that it reaches the n-type cladding layer 102 across the active layer 104, for example.
  • the entire surface of the stripe structure including the groove 106a is covered with an insulating layer 109 made of, for example, SiO 2 .
  • the p-type contact layer 107 is exposed by opening the upper portion of the waveguide 117 in the insulating layer 109 by lithography and dry etching. At this time, the insulating layer 109 remains in the groove 119.
  • the groove 106a filled with the dielectric (SiO 2 ) having a refractive index smaller than that of the GaN-based semiconductor is formed on the upper part of the ridge stripe structure, that is, on the waveguide 117.
  • the waveguide 117 is formed with a refractive index modulation structure that makes the light intensity distribution in the direction perpendicular to the light guiding direction uniform.
  • the groove 106 a is formed so that its width increases toward the front end face 50. For this reason, since the light intensity distribution in the horizontal direction on the front end face 50 side where the light intensity is strong can be effectively uniformed, the light output can be increased.
  • a first metal layer made of Pd / Pt is formed on the upper surface of the waveguide 117 and the insulating layer 109 by, for example, a vacuum deposition method. Thereafter, the first metal layer is patterned by lithography and dry etching to form the p-electrode layer 108 on the waveguide 117. Subsequently, the p electrode 115 made of Ti / Au or Ti / Pt / Au is formed on the p electrode layer 108 and the insulating layer 109 by, for example, a vacuum deposition method, a lift-off method, or the like.
  • the surface of the substrate 101 opposite to the semiconductor stacked body 100 is polished (back surface polishing) to reduce the thickness of the substrate 101 to about 50 ⁇ m to 200 ⁇ m. Subsequently, the polished surface is subjected to surface treatment, and an n-electrode 116 made of Cr / Pt / Au or Ti / Pt / Au is formed thereon.
  • the substrate and the semiconductor multilayer are separated into chips, and individual semiconductor light emitting devices 1 are obtained.
  • the semiconductor light emitting device 1 can be easily and reliably manufactured.
  • FIG. 11 shows a semiconductor light emitting device according to a first modification of the first embodiment of the present invention.
  • an insulating substrate made of, for example, sapphire is used instead of the conductive substrate made of a GaN-based semiconductor for the substrate 101A on which the semiconductor stacked body is grown.
  • the n-electrode 116 is formed on the n-type cladding layer 102 that is partially exposed from the semiconductor laminate. That is, like the p-electrode 115, it is formed on the main surface side of the substrate 101A.
  • the difference from the first embodiment is that the semiconductor stacked body formed on the substrate 101A is etched from the p-type contact layer 107 to the n-type cladding 102, and n A step of forming an electrode opening 120 for providing the electrode 116 is added.
  • a step of providing an opening for forming an n electrode in the insulating layer 109 deposited on the electrode opening 120 provided in the n-type cladding 102 and a step of providing an n electrode 116 in the opening of the insulating layer 109 And are added. Note that the back surface polishing for the substrate 101A and the step of forming the n-electrode 116 on the polished back surface are not necessary.
  • the semiconductor light emitting element 1 can be manufactured at a relatively low cost.
  • the step of forming the electrode opening 120 and the step of forming the opening 118 shown in FIG. 7 may be performed simultaneously.
  • the step of providing the insulating layer 109 with an opening in the upper portion of the waveguide 117 for forming the p-electrode layer 108 and the step of providing the electrode opening 120 for forming the n-electrode 116 may be performed simultaneously. . Thereby, the semiconductor light emitting element 1 can be manufactured at a lower cost.
  • the semiconductor light emitting device 1 according to the second modification adopts a configuration in which the waveguide 117 is bent in a plane J shape. Specifically, it is bent at a distance Lg from the front end face 50. Thereby, the emitted light from the front stripe end face 51 is emitted so as to have a predetermined angle with respect to the normal direction of the front end face 50.
  • the bent waveguide 117 gradually increases in width from the rear end face 60 toward the front end face 50, and the front end face 50 is filled with SiO 2 or the like.
  • the groove 106a is formed on the front end face 50 side so that its width gradually increases.
  • the front stripe end face 51 and the rear stripe end face are formed by cleaving or the like without providing the opening 118 for forming the front stripe end face 51 and the rear stripe end face 61. Since 61 can be formed, the angle of each end face can be controlled more reliably.
  • the number of the grooves 106a constituting the low refractive index layer is only one, but the present invention is not limited to this. That is, in order to further flatten the light distribution on the front stripe end face 61, the groove 106a may have two or more grooves.
  • a convex reflection surface 62 serving as a lens mirror for widening the light intensity distribution is integrated on the rear stripe end face of the optical resonator.
  • the convex reflection surface 62 can be obtained by etching the semiconductor stacked body 100 shown in FIG. 5 in a direction perpendicular to the substrate surface until reaching the substrate 101 by dry etching using a mask made of SiO 2 , for example. Can be formed.
  • the convex reflecting surface 62 the light propagating from the front end surface 50 toward the rear end surface 60 is spread and reflected in the direction of both sides of the waveguide 117.
  • the convex reflection surface 62 has a refractive index modulation structure because the refractive index at the convex portion is different from that of the simple stripe type.
  • the light guided through the central portion of the waveguide 117 is reflected to the outside of the waveguide at a wide angle, while the side portion of the waveguide 117 is reflected. It is desirable that the light propagating through the light be reflected toward the front end face 50 at an angle close to vertical. Therefore, by increasing the curvature of the convex reflection surface (lens mirror) 62 at the center compared to the peripheral edge of the waveguide 117, the light distribution shape in the waveguide 117 can be made more uniform.
  • the reflected light at the central portion of the waveguide 117 having a high light intensity is reflected so as to spread, thereby making it possible to reduce the horizontal direction on the front end face 50 side as compared with the conventional FIG.
  • the light intensity distribution can be made uniform.
  • the light intensity distribution (distribution in the direction perpendicular to the waveguide) in the waveguide 117 is uniform due to the convex reflection surfaces 62 integrated on the end face of the rear stripe. It becomes. For this reason, since the saturation of the optical gain caused by the nonuniformity of the light distribution is reduced, the light output can be increased.
  • FIG. 15A shows the result of calculating the curvature radius dependence of the convex reflecting surface 62 with respect to the light distribution in the waveguide 117 of the semiconductor light emitting device 2 shown in FIG.
  • FIG. 15B shows the result of calculating the curvature radius dependency of the convex reflecting surface 62 with respect to the light output of the semiconductor light emitting element 2 under a predetermined condition.
  • the analysis is performed by a rate equation using a mode distribution calculated by a finite difference time domain (FDTD) method.
  • FDTD finite difference time domain
  • Parameters at the time of measurement are that the resonator length Ls is 800 ⁇ m, the stripe width Wr of the rear end face 60 is 0.8 ⁇ m, the stripe width Wf of the front end face 50 is 2.1 ⁇ m, and the absorption coefficient ⁇ i is 7 cm ⁇ 1 . .
  • the optical output is calculated with an operating current of 150 mA.
  • the maximum value of the light output is obtained at the curvature radius of 1240 ⁇ m of the lens mirror, and the light output is increased by 20% compared with the case where the convex reflecting surface 62 is not provided (without the lens). . If the radius of curvature is larger than this, the light output decreases due to radiation loss. Further, as can be seen from FIG. 15A, when the radius of curvature is large, the effect of uniformizing the light distribution becomes insufficient and the light output is lowered.
  • the optical output is increased by integrating the optimally designed lens (convex reflection surface 62) on the rear end face 60 of the stripe structure. be able to.
  • the lens (convex reflection surface) is formed only on the rear end surface 60, but may be formed on the front end surface 50.
  • the super luminescent diode (SLD) or the laser diode (LD) can be applied to the semiconductor light emitting elements 1 and 2, it is not necessarily limited to SLD or LD.
  • the semiconductor light emitting device can make the light intensity distribution in the waveguide more uniform, the light output can be increased, and the semiconductor light emitting device can be applied to an edge emitting semiconductor light emitting device having a waveguide.
  • the semiconductor light emitting device can be used for a liquid crystal projector, a backlight, and the like that achieve high luminance and low power consumption.
  • SYMBOLS 1 Semiconductor light-emitting device 2
  • Semiconductor light-emitting device 50 Front end surface 51 Front stripe end surface 60 Back end surface 61 Back stripe end surface 62
  • DESCRIPTION OF SYMBOLS 100 Semiconductor laminated body 101 Substrate 101A Substrate 102 n-type clad layer 103 n-type light guide layer 104 Active layer 105 p-type light guide layer 106 p-type clad layer 106a Groove 107 p-type contact layer 108 p-electrode layer 109 Insulating layer 115 p-electrode 116 n-electrode 117 waveguide (optical resonator) 118 opening 120 electrode opening 190 separation line

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un élément électroluminescent à semi-conducteur (1) comprenant un empilement de couches de semi-conducteurs (100) obtenu par empilement d'une pluralité de couches de semi-conducteurs présentant différentes compositions, l'empilement comprenant un résonateur optique interne. Le résonateur optique comprend un guide d'ondes à ruban (117) présentant une face d'extrémité avant (50) destinée à émettre de la lumière, et une face d'extrémité arrière (60) dotée d'une quantité d'émission de lumière inférieure à celle de la face d'extrémité avant (50). Le résonateur optique est une structure à modulation d'indice de réfraction destinée à rendre uniforme la distribution d'intensité lumineuse dans une direction perpendiculaire à la direction de lumière guidant l'onde, et présente une partie fente (106a) comprenant une couche à faible indice de réfraction.
PCT/JP2010/006940 2010-08-02 2010-11-29 Elément électroluminescent à semi-conducteur WO2012017505A1 (fr)

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JP2010-173471 2010-08-02
JP2010173471A JP2012033797A (ja) 2010-08-02 2010-08-02 半導体発光素子

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WO2012017505A1 true WO2012017505A1 (fr) 2012-02-09

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Cited By (2)

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US10691005B2 (en) 2016-12-07 2020-06-23 Sony Corporation Optical element and display apparatus
US11217721B2 (en) 2015-12-25 2022-01-04 Sony Corporation Light-emitting device and display apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4244905A1 (fr) * 2020-11-12 2023-09-20 Denselight Semiconductors Pte Ltd. Diode électroluminescente superluminescente à spectre continu à bande ultralarge

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JPS62213188A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd 半導体レ−ザ素子
JPH04131918A (ja) * 1990-09-25 1992-05-06 Agency Of Ind Science & Technol フリンジ発生装置及びこれを用いた論理演算装置
JP2000269600A (ja) * 1999-03-18 2000-09-29 Hitachi Cable Ltd 高出力広帯域光源及び光増幅デバイス
JP2002521828A (ja) * 1998-07-23 2002-07-16 ウイスコンシン アラムニ リサーチ ファンデーション 横方向の光閉じ込めを低減した側部反導波型高出力半導体
JP2005116728A (ja) * 2003-10-07 2005-04-28 Sony Corp 半導体レーザ
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JPS62213188A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd 半導体レ−ザ素子
JPH04131918A (ja) * 1990-09-25 1992-05-06 Agency Of Ind Science & Technol フリンジ発生装置及びこれを用いた論理演算装置
JP2002521828A (ja) * 1998-07-23 2002-07-16 ウイスコンシン アラムニ リサーチ ファンデーション 横方向の光閉じ込めを低減した側部反導波型高出力半導体
JP2000269600A (ja) * 1999-03-18 2000-09-29 Hitachi Cable Ltd 高出力広帯域光源及び光増幅デバイス
JP2005116728A (ja) * 2003-10-07 2005-04-28 Sony Corp 半導体レーザ
JP2007165599A (ja) * 2005-12-14 2007-06-28 Fujifilm Corp 半導体発光素子および該半導体発光素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11217721B2 (en) 2015-12-25 2022-01-04 Sony Corporation Light-emitting device and display apparatus
US10691005B2 (en) 2016-12-07 2020-06-23 Sony Corporation Optical element and display apparatus

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