WO2012011628A1 - Carte sonde et procédé de fabrication associé - Google Patents

Carte sonde et procédé de fabrication associé Download PDF

Info

Publication number
WO2012011628A1
WO2012011628A1 PCT/KR2010/005904 KR2010005904W WO2012011628A1 WO 2012011628 A1 WO2012011628 A1 WO 2012011628A1 KR 2010005904 W KR2010005904 W KR 2010005904W WO 2012011628 A1 WO2012011628 A1 WO 2012011628A1
Authority
WO
WIPO (PCT)
Prior art keywords
probe
electrically connected
probe card
conductive
insulating layer
Prior art date
Application number
PCT/KR2010/005904
Other languages
English (en)
Korean (ko)
Inventor
조병호
조용호
김헌수
Original Assignee
(주) 마이크로프랜드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주) 마이크로프랜드 filed Critical (주) 마이크로프랜드
Publication of WO2012011628A1 publication Critical patent/WO2012011628A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06727—Cantilever beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Definitions

  • the present invention relates to a probe card used as a semiconductor inspection equipment and a method for manufacturing the same, and more particularly, to a probe card and a method for manufacturing the probe on the common substrate in a MEMS method.
  • a probe card electrically connects a wafer and a semiconductor inspection device to test for defects during or after the manufacture of a semiconductor device such as a semiconductor memory or a flat panel display (FPD), thereby transmitting an electrical signal from the inspection device to the wafer. It is a device for transmitting to the formed semiconductor die (die), and transmits a signal from the semiconductor die to the semiconductor inspection equipment.
  • a semiconductor inspection device such as a semiconductor memory or a flat panel display (FPD)
  • FPD flat panel display
  • the conventional general probe card has a structure of a space transformer connected to a printed circuit board electrically connected to a semiconductor inspection equipment through an interposer, and a probe mounted on the space converter and connected to a wafer. .
  • the spatial transducer performs a function of pitch conversion between the probe and the printed circuit board to inspect a fine pitch contact pad, and is typically in the form of a multi layer ceramic (MLC) in which a green sheet is formed in multiple layers.
  • MLC multi layer ceramic
  • the present invention has been made to solve the above-mentioned problems in the prior art, and a main problem is to provide a method that can drastically shorten the manufacturing process time of the space transducer.
  • Another object of the present invention is to provide a spatial converter of a new material having a relatively low cost and similar performance to that of a ceramic by replacing an expensive ceramic multilayer substrate.
  • the probe card comprises a space converter electrically connected to the printed circuit board, and a probe mounted on the space converter to connect to the wafer, the space
  • the converter includes: a common substrate having a base contact made of a conductive metal material in a predetermined pattern; An upper plating layer formed of a conductive metal material on the upper surface of the common substrate and electrically connected to the base contact; An upper insulating layer of PI material formed on the upper surface of the common substrate in a MEMS manner; And an upper contact formed in the upper insulating layer in a MEMS manner and electrically connected to the upper plating layer.
  • the space converter may further include a lower plating layer of a conductive metal material formed on the bottom surface of the common substrate in a MEMS manner and electrically connected to the base contact; A lower insulating layer of PI material formed on the bottom surface of the common substrate in a MEMS manner; The lower contact layer is formed in the lower insulating layer in the MEMS method, the lower contact of the conductive metal material electrically connected to the lower plating layer; may be configured to further include.
  • the probe may include: a proximal end formed on an upper surface of the upper insulating layer to conduct electricity to the upper contact; A beam having one end fixed to an upper surface of the proximal end and extending in a lateral direction; And a probe tip protruding vertically from the other end of the beam.
  • the probe card according to the present invention is a probe having a base substrate, a plurality of probes formed on the upper surface of the base substrate and electrically connected to the semiconductor wafer, and a plurality of conductive solder formed on the bottom surface of the base substrate and electrically connected to the probe A module; And a plurality of pads formed on an upper surface of the space transducer and electrically connected to an upper contact, and thermally fused to respective conductive solders during bonding of the probe module and the space transducer.
  • the probe card according to the present invention the first alignment key formed on the upper surface of the space transducer; And a second alignment key formed at a position corresponding to the first alignment key on the bottom surface of the probe module so that the conductive solder may be aligned on each pad during the bonding of the probe module and the space transducer. Can be.
  • one of the first alignment key and the second alignment key is made of a protrusion structure, and the other is made of a seating groove structure in which the protrusion structure can be accommodated.
  • the probe card according to the present invention is characterized in that the center of the conductive solder protrudes downward, the center of the pad is formed concave to accommodate the center of the protruding conductive solder.
  • the probe card according to the present invention is preferably made of a material that does not melt during the thermal fusion process of the conductive solder and the pad, the solder support portion inserted into the conductive solder to support the probe module; preferably further comprises a.
  • the method of manufacturing a probe card according to the present invention includes a process of manufacturing a space transducer electrically connected to a printed circuit board, and a process of forming a probe electrically connected to the space transducer.
  • the manufacturing method of the space converter may include: a first step of manufacturing a common substrate having a base contact made of a conductive metal material in a predetermined pattern; A second step of forming an upper plating layer of a conductive metal material electrically connected to the base contact on an upper surface of a common substrate by a MEMS method; A third step of forming an upper insulating layer of PI material on the upper surface of the common substrate by a MEMS method; And a fourth step of forming an upper contact of a conductive metal material electrically connected to the upper plating layer in the upper insulating layer by MEMS.
  • the third step may be performed by applying a liquid PI material on the upper surface of the common substrate and baking the liquid PI material to form an upper insulating layer, or by pressing a solid PI material on the upper surface of the common substrate to form an upper insulating layer.
  • the probe card manufacturing method the fifth step of forming a lower plating layer of a conductive metal material electrically connected to the base contact on the bottom surface of the common substrate by MEMS method; A sixth step of forming a lower insulating layer of PI material on the bottom surface of the common substrate by a MEMS method; And forming a lower contact of a conductive metal material electrically connected to the lower plating layer inside the lower insulating layer by using a MEMS method.
  • the method of manufacturing a probe card according to the present invention further includes the eighth step of forming a plurality of pads electrically connected to an upper contact on an upper surface of the space transducer.
  • Manufacturing a probe module including a plurality of probes formed on an upper surface of the base substrate and electrically connected to the semiconductor wafer, and a plurality of conductive solders formed on the bottom surface of the base substrate and electrically connected to the probes; Thermally fusion each conductive solder to a pad, thereby bonding the probe module and the space transducer.
  • FIG. 1 is a cross-sectional view showing a probe card according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a probe card according to a second embodiment of the present invention.
  • FIG 3 is a cross-sectional view showing a probe card according to a third embodiment of the present invention.
  • 4A and 4B are side cross-sectional and bottom views of a space converter according to a third embodiment of the present invention.
  • Figures 5a and 5b is a side cross-sectional view and a bottom view showing a probe module according to a third embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing a conductive solder according to the present invention.
  • FIG. 7 is a cross-sectional view showing a method of manufacturing a probe card according to the first embodiment of the present invention.
  • FIG. 8 is a cross-sectional view illustrating a method of manufacturing a probe card according to a second embodiment of the present invention.
  • FIG. 9 is a cross-sectional view showing a method for manufacturing a probe card according to a third embodiment of the present invention.
  • FIGS. 5A and 5B show the configuration of the space transducer and the probe module according to the third embodiment of the present invention
  • FIG. 6 shows the structure of the conductive solder according to the present invention.
  • a probe card according to a first embodiment of the present invention is mounted on a space converter 10 and a space converter 10 electrically connected to a printed circuit board electrically connected to a semiconductor inspection equipment. It is comprised including the probe 40 connected to a wafer.
  • the printed circuit board receives an electrical signal transmitted from the semiconductor inspection equipment, and the received electrical signal is transmitted to the probe 40 through the space converter 10, while the signal transmitted from the probe 40 is reversed. It includes a circuit for transferring to the semiconductor inspection equipment.
  • the probe 40 has a probe structure for electrically connecting to a semiconductor wafer, and is formed on an upper surface of the space transducer 10.
  • the space transformer 10 includes a common substrate 1, an upper plating layer 11, an upper insulating layer 12, and an upper contact 13 formed on the upper surface of the common substrate 1 by a MEMS method. It is configured to include).
  • the common substrate 1 is a substrate in which a plurality of base contacts 2 made of a conductive metal material are formed therein in a predetermined pattern. That is, by separately preparing and preparing the common substrate 1 having the base contact 2 formed therein in a predetermined pattern according to the intention of the designer, it is possible to shorten the manufacturing process of the space converter 10.
  • the upper plating layer 11 is formed of a MEMS method on the upper surface of the common board, and is made of a conductive metal material electrically connected to the base contact 2 of the common board 1. It is preferable that a conductive metal material such as Cu or Au is used as the material of the upper plating layer 11.
  • the upper insulating layer 12 is formed in the MEMS method on the upper surface of the common substrate 1 and is made of a PI material.
  • the PI Polyimide
  • the PI material is characterized by high heat resistance and is the highest among engineering plastics. It belongs to the class and has the advantage that a characteristic does not age even if it uses for a long time especially at high temperature.
  • a ceramic material is mainly used to form an insulation layer of the space converter 10.
  • the manufacturing time of the space converter 10 is increased and expensive ceramics are manufactured.
  • the price burden increases due to the material.
  • the present invention is configured to manufacture the insulating layer of the space converter 10 from the PI material, which exhibits substantially similar performance as that of the ceramic material and can greatly shorten the manufacturing time and the price is relatively low.
  • the conventional ceramic material has a difficulty in coping with the semiconductor wafer because the thermal expansion coefficient is different from that of the semiconductor wafer, but the PI material applied in the present invention can overcome the above problems due to high heat resistance. .
  • the upper contact 13 is formed in the upper insulating layer 12 by a MEMS method, and is made of a conductive metal material electrically connected to the upper plating layer 11.
  • the probe 40 and the base contact 2 are electrically connected to each other through the upper contact 13 and the upper plating layer 11.
  • a conductive metal material such as Cu or Au is preferably used.
  • the above-described upper plating layer 11, the upper insulating layer 12, and the upper contact 13 be formed on the upper surface of the common substrate 1 repeatedly.
  • the probe card according to the second embodiment of the present invention the upper plating layer 11, the upper insulating layer 12 of the PI material on the upper surface of the common substrate 1 as in the first embodiment described above
  • the upper contact 13 is formed.
  • a lower plating layer 21 of a conductive metal material electrically connected to the base contact 2 is formed on the bottom surface of the common substrate 1 by a MEMS method, and the lower insulating layer 22 of a PI material is a MEMS method. Is formed.
  • a lower contact 23 made of a conductive metal material electrically connected to the lower plating layer 21 is formed in the lower insulating layer 22 by a MEMS method.
  • the interval of the probe 40 is also minutely arranged to inspect the wafer having a finer circuit structure. Accordingly, a larger number of insulating layers are stacked on the space transducer 20 for pitch conversion of the probe 40. Should be.
  • the insulating layers 12 and 22 are formed on both the upper and lower surfaces of the common substrate 1, thereby stably converting the pitch of the probe 40. Can be applied more widely.
  • the lower plating layer 21, the lower insulating layer 22, and the lower contact 23 may be repeatedly formed on the bottom surface of the common substrate 1.
  • the probe 40 is formed on the upper surfaces of the space transducers 10 and 20 by the MEMS method.
  • the probe 40 has a proximal end 42 formed on the upper surface of the space transducers 10 and 20, a beam 44 extending laterally from the upper surface of the proximal end 42, and the other end of the beam 44. It is configured to include a probe tip 46 protruding from the vertical.
  • the proximal end 42 protrudes to a predetermined height on the space transducers 10 and 20 and is made of a conductive metal material.
  • the beam 44 has a structure extending in the lateral direction from the upper surface of the base end 42, one end is fixedly attached to the upper surface of the base end (42).
  • the beam 44 has an arbitrary length in the lateral direction so as to elastically support the probe tip 46, and is made of a conductive metal material similarly to the base end 42.
  • a probe tip 46 electrically connected to the semiconductor wafer protrudes vertically.
  • the probe card according to the third embodiment of the present invention may have an upper plating layer 11 and an upper insulating layer on the upper surface of the common substrate 1 as in the above-described first or second embodiment. 12) and the upper contact 13 are formed repeatedly in sequence, and the space converter in which the lower plating layer 21, the lower insulating layer 22, and the lower contact 23 are sequentially formed on the bottom surface of the common substrate 1 as necessary.
  • the probe 40 is not directly formed on the upper surface of the space transducer 10, but the probe module 30 on which the probe 40 is formed may be connected to the space transducer 10. Make it separately.
  • the probe module 30 is formed on the base substrate 32, the plurality of probes 40 formed on the top surface of the base substrate 32 and electrically connected to the semiconductor wafer, and the bottom surface of the base substrate 32. And a plurality of conductive solders 36 electrically connected to 40.
  • a plurality of pads 16 are formed on the upper surface of the space transducer 10 and electrically connected to the upper contacts 13 at positions corresponding to the respective conductive solders 36.
  • the probe module 30 is bonded to the upper surface of the space converter 10, wherein each of the conductive solders 36 is thermally fused to the corresponding pad 16 so that the probe module 30 and the space converter 10 are connected to each other. Joining is possible.
  • first alignment key 18 may be formed to align the alignment between the solder 36 and the pad 16.
  • the first alignment key 18 may have a mounting groove structure in which the second alignment key 38 of the probe module 30 to be described later may be accommodated.
  • the pad 16 may have a conventional flat structure, but more precisely the alignment between the conductive solder 36 and the pad 16 during the bonding process of the probe module 30 and the space transducer 10.
  • a concave groove may be formed in the center of the pad 16 so that the conductive solder 36 can be inserted.
  • the conductive solder 36 and the pad 16 are disposed on the bottom surface of the probe module 30 according to the third embodiment of the present invention at a position corresponding to the first alignment key 18.
  • a second align key 38 can be formed to align the alignment between In other words, the first alignment key 18 and the second alignment key 18 may be accurately aligned with the top surface of the pad 16 during the bonding process between the probe module 30 and the space transducer 10.
  • the align key 38 is formed at a position corresponding to each other.
  • the second alignment key 38 has a protrusion structure protruding downward from the bottom surface of the base substrate 32, and the seating groove structure described above in the bonding process between the probe module 30 and the space transducer 10. It may be configured to be inserted into the first alignment key 18 of the.
  • the first alignment key 18 may have a protrusion structure
  • the second alignment key 38 may have a seating groove structure for accommodating the first alignment key 18. have.
  • the second alignment key 38 has a cross-shaped protrusion structure of "+" shape, and the first alignment key 18 corresponding thereto is also configured to have a cross-shaped seating groove structure. It is preferable to facilitate the fastening of the 18 and the align key 38.
  • the conductive solder 36 may be formed of a conventional flat structure or a ball structure, but is aligned between the respective conductive solder 36 and the pad 16 during the bonding process of the probe module 30 and the space transducer 10.
  • the center of the conductive solder 36 may be configured to protrude to form a projection for insertion into the concave center of the above-described pad (16). Accordingly, in the process of bonding the probe module 30 and the space transducer 10, the protruding center portion of the conductive solder 36 is inserted into the concave center portion of the pad 16, thereby providing the respective conductive solder 36 and the pad 16. The alignment between can be made more accurately.
  • the conductive solder 36 according to the present invention should be made of a material that can melt the surface by heat, a plurality of conductive solder 36 may not all melt to the same level. That is, when some of the conductive solder 36 is further melted in the process of bonding the conductive solder 36 to the pad 16 while the conductive solder 36 is melted by external heat, the thickness of the conductive solder 36 is lowered and the pro-module module is lowered. There may be a problem that the horizontal state of 30 is not maintained.
  • the conductive solder 36 As shown in Figure 6, the solder support 35 made of a material that does not melt during the thermal fusion process of the conductive solder 36 and the pad 16 ) Is configured to have a structure that is inserted therein. Therefore, even if some of the conductive solder 36 is melted more than necessary, because the solder support 35 inserted therein can support the probe module 30 in the unmelted state, the horizontal state of the probe module 30 Can be maintained.
  • FIG. 7 shows a manufacturing process of the probe card according to the first embodiment of the present invention.
  • the method of manufacturing a probe card according to the first embodiment of the present invention includes a process of manufacturing a space converter 10 electrically connected to a printed circuit board electrically connected to a semiconductor inspection equipment, and electrically connected to the space converter 10. It is configured to include a process of forming a probe 40 connected to.
  • the manufacturing process of the space transducer 10 in the method of manufacturing a probe card according to the first embodiment of the present invention is performed in the following order.
  • a common substrate 1 on which a base contact 2 of a conductive metal material is formed in a predetermined pattern is manufactured.
  • an upper plating layer 11 of a conductive metal material electrically connected to the base contact 2 is formed on the upper surface of the common substrate 1 by a MEMS method.
  • a seed layer is formed by depositing a conductive metal material such as Cu or Au on the upper surface of the common substrate 1, and after forming a photoresist layer by applying a photoresist in a dot pattern on the seed layer, a mask pattern is formed.
  • the seed layer of the dot pattern is formed by etching and removing the remaining seed layers except for the portion where the upper plating layer 11 is to be formed. Thereafter, the upper plating layer 11 is formed by plating a metal material on the seed layer of the dot pattern.
  • the upper insulating layer 12 of PI material is formed on the upper surface of the common substrate 1 by the MEMS method.
  • the upper insulating layer may be formed by coating a liquid PI material on the upper surface of the common substrate 1 on which the upper plating layer 11 is formed and then firing or compressing the solid PI material on the upper surface of the common substrate 1. 12) can be formed.
  • an upper contact 13 of a conductive metal material electrically connected to the upper plating layer 11 is formed in the upper insulating layer 12 by a MEMS method.
  • a via hole communicating with the upper plating layer 11 is formed in the upper insulating layer 12 by forming a photoresist layer and mask patterning, and plating a conductive metal material such as Cu or Au in the via hole.
  • a conductive metal material such as Cu or Au
  • the formation process of the upper plating layer 11, the upper insulating layer 12, and the upper contact 13 is repeated several times to complete the space converter 10. .
  • reference numeral 14 denotes an LGA pad for electrically connecting the space converter 10 to the printed circuit board.
  • FIG. 8 shows a manufacturing process of a probe card according to a second embodiment of the present invention.
  • the manufacturing process of the space transducer 20 in the method of manufacturing a probe card according to the second embodiment of the present invention is performed in the following order.
  • the upper plating layer 11, the upper insulating layer 12, and the upper contact 13 are sequentially formed on the upper surface of the common substrate 1.
  • a lower plating layer 21 of a conductive metal material electrically connected to the base contact 2 is formed on the bottom surface of the common substrate 1 by a MEMS method.
  • the lower plating layer 21 may be formed by the same MEMS method as the upper plating layer 11.
  • a lower insulating layer 22 of PI material is formed on the bottom surface of the common substrate 1 by the MEMS method.
  • the lower insulating layer may be formed by coating a liquid PI material on the bottom surface of the common substrate 1 on which the lower plating layer 21 is formed and then firing or compressing a solid PI material on the bottom surface of the common substrate 1. 22) can be formed.
  • a lower contact 23 made of a conductive metal material electrically connected to the lower plating layer 21 is formed in the lower insulating layer 22 by a MEMS method.
  • the lower contact 23 may be formed in the same MEMS method as the upper contact 13.
  • reference numeral 24 denotes an LGA pad for electrically connecting the space converter 20 to the printed circuit board.
  • the probe 40 is formed on the top surface of the space transducers 10 and 20 by MEMS.
  • the base end 42 is formed on the space transducer. For example, after the photoresist is formed on the space transducers 10 and 20 to form a photoresist layer, a portion where the base end portion 42 is to be formed is exposed by exposure to a mask pattern, and then exposed to conductive.
  • the base end part 42 is formed by apply
  • the height of the base end portion 42 may be appropriately adjusted by repeating the photoresist coating and the lamination process of the conductive metal.
  • one end is fixedly attached to the upper surface of the base end 42, and forms a beam 44 extending in the lateral direction.
  • the photoresist is applied to form a photoresist layer
  • the portion on which the beam 44 is to be formed is exposed by exposure under a mask pattern, and then a conductive metal is applied to the exposed portion to apply the beam 44.
  • a conductive metal is applied to the exposed portion to apply the beam 44.
  • the probe tip 46 which is electrically connected to the semiconductor wafer, is formed to protrude perpendicularly from the other end of the beam 44.
  • FIG 9 shows a manufacturing process of the probe card according to the third embodiment of the present invention.
  • the space transducer 10 is manufactured in the same manner as the above-described first or second embodiment, and the probe 40 is formed. After the probe module 30 is manufactured separately, the probe module 30 and the space transducer 10 are electrically connected to each other.
  • the upper plating layer 11, the upper insulating layer 12, and the upper contact 13 are sequentially formed on the upper surface of the common substrate 1 in succession. Accordingly, a space converter 10 in which the lower plating layer 21, the lower insulating layer 22, and the lower contact 23 are sequentially formed on the bottom surface of the common substrate 1 is manufactured.
  • the probe module 30 having the probe 40 formed thereon is manufactured separately from the space converter 10.
  • the probe module 30 is formed on the base substrate 32 and the upper surface of the base substrate 32 to form a semiconductor wafer.
  • a plurality of probes 40 to be electrically connected and a plurality of conductive solders 36 formed on the bottom surface of the base substrate 32 and electrically connected to the probes 40 are formed.
  • a plurality of pads 16 electrically connected to the upper contact 13 are formed at positions corresponding to the respective conductive solders 36 on the upper surface of the space transducer 10.
  • the probe module 30 is bonded to the upper surface of the space converter 10, wherein each of the conductive solders 36 is thermally fused to the corresponding pad 16 so that the probe module 30 and the space converter 10 are connected to each other. Joining is possible.
  • the alignment between the conductive solder 36 formed on the bottom surface of the probe module 30 and the pad 16 formed on the top surface of the space transducer 10 is performed. The most important thing is to meet. If the alignment is not performed properly between some of the conductive solder 36 and the pad 16, the electrical signal transmission between the probe 40 and the printed circuit board is not made, which may lead to a defect of the probe card. to be.
  • the first alignment key 18 and the second alignment formed at corresponding positions of the probe module 30 and the space transducer 10 are provided.
  • the key 38 is used to align the alignment between the conductive solder 36 and the pad 16.
  • the probe may be accommodated in the first alignment key 18 of the mounting groove structure formed on the upper surface of the space transducer 10, the second alignment key 38 of the protrusion structure formed on the bottom surface of the probe module 30. It may also be carried out by bringing the module 30 into contact with the top surface of the space transducer 10.
  • each of the conductive solders 36 is in contact with the pads 16 at the corresponding positions, where the conductive solders 36 The protruding center of the pad is inserted into the concave center of the pad 16.
  • each conductive solder 36 is in contact with the corresponding pad 16
  • the surface of the conductive solder 36 is melted and thermally fused to the pad 16.
  • a probe card in which the probe module 30 is electrically connected to the space transducer 10 may be completed.
  • the present invention it is possible to significantly reduce the manufacturing time of the space transducer by laminating PI material on the common substrate by MEMS method.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L'invention concerne une carte sonde et un procédé associé; la carte sonde comporte : un transformateur d'espace électriquement connecté à une carte de circuit imprimé; et une sonde montée sur le transformateur d'espace et venant en contact avec une plaquette; le transformateur d'espace comprend: un substrat commun sur lequel est formée une borne de base métallique dans un motif préétabli; une couche de placage supérieure métallique conductrice formée dans une structure MEMS sur une surface supérieure du substrat commun et électriquement connectée à la borne de base; une couche isolante supérieure, à base de matériau PI, formée dans la structure MEMS sur la surface supérieure du substrat commun; et une borne supérieure métallique conductrice formée dans la structure MEMS à l'intérieur de la couche isolante supérieure, et électriquement connectée à la couche de placage supérieure.
PCT/KR2010/005904 2010-07-19 2010-09-01 Carte sonde et procédé de fabrication associé WO2012011628A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100069724A KR101048497B1 (ko) 2010-07-19 2010-07-19 프로브 카드 및 그 제조방법
KR10-2010-0069724 2010-07-19

Publications (1)

Publication Number Publication Date
WO2012011628A1 true WO2012011628A1 (fr) 2012-01-26

Family

ID=44923472

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005904 WO2012011628A1 (fr) 2010-07-19 2010-09-01 Carte sonde et procédé de fabrication associé

Country Status (2)

Country Link
KR (1) KR101048497B1 (fr)
WO (1) WO2012011628A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014122872A (ja) * 2012-12-21 2014-07-03 Samsung Electro-Mechanics Co Ltd 予備空間変換器及びこれを用いて製造された空間変換器、並びに前記空間変換器を備える半導体素子検査装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101345308B1 (ko) * 2011-12-06 2013-12-27 주식회사 기가레인 프로브카드
KR101442354B1 (ko) 2012-12-21 2014-09-17 삼성전기주식회사 예비 공간 변환기 및 이를 이용하여 제조된 공간 변환기, 그리고 상기 공간 변환기를 구비하는 반도체 소자 검사 장치
KR101856124B1 (ko) * 2016-09-13 2018-05-09 (주) 마이크로프랜드 프로브모듈 및 그 제조방법
KR102581387B1 (ko) * 2018-09-11 2023-09-21 삼성전자주식회사 프로브 및 이를 포함하는 프로브 카드

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020057351A (ko) * 2001-01-04 2002-07-11 윤종용 볼 그리드 어레이 패키지와 그 실장 구조
US20060033516A1 (en) * 2000-08-24 2006-02-16 Rincon Reynaldo M Multiple-chip probe and universal tester contact assemblage
KR20070026632A (ko) * 2004-05-24 2007-03-08 동경 엘렉트론 주식회사 적층 기판 및 프로브 카드
KR20090027353A (ko) * 2007-09-12 2009-03-17 주식회사 아이엠 프로브카드용 기판 및 이의 제조방법
KR20090117218A (ko) * 2008-05-09 2009-11-12 윌테크놀러지(주) 프로브 카드의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060033516A1 (en) * 2000-08-24 2006-02-16 Rincon Reynaldo M Multiple-chip probe and universal tester contact assemblage
KR20020057351A (ko) * 2001-01-04 2002-07-11 윤종용 볼 그리드 어레이 패키지와 그 실장 구조
KR20070026632A (ko) * 2004-05-24 2007-03-08 동경 엘렉트론 주식회사 적층 기판 및 프로브 카드
KR20090027353A (ko) * 2007-09-12 2009-03-17 주식회사 아이엠 프로브카드용 기판 및 이의 제조방법
KR20090117218A (ko) * 2008-05-09 2009-11-12 윌테크놀러지(주) 프로브 카드의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014122872A (ja) * 2012-12-21 2014-07-03 Samsung Electro-Mechanics Co Ltd 予備空間変換器及びこれを用いて製造された空間変換器、並びに前記空間変換器を備える半導体素子検査装置

Also Published As

Publication number Publication date
KR101048497B1 (ko) 2011-07-12

Similar Documents

Publication Publication Date Title
WO2019216503A1 (fr) Prise de vérification de dispositif à semi-conducteurs
CN101292337B (zh) 以“一次多个”方式构建焊线探针卡的方法
WO2013151316A1 (fr) Prise de test ayant une unité conductrice, à haute densité et son procédé de fabrication
WO2012011628A1 (fr) Carte sonde et procédé de fabrication associé
WO2012121449A1 (fr) Carte à pointe et procédé de fabrication
WO2012169866A2 (fr) Carte de circuit imprimé et procédé pour sa fabrication
WO2019004609A1 (fr) Substrat de céramique multicouches et procédé pour le fabriquer
WO2012141541A2 (fr) Interposeur pour module optique, module optique l'utilisant, son procédé de fabrication
WO2011004956A1 (fr) Carte de test
WO2018135674A1 (fr) Module à motifs conducteurs bidirectionnels
EP2820927A1 (fr) Carte de circuit imprimé et procédé de fabrication de celle-ci
WO2013133560A1 (fr) Carte de circuit imprimé et son procédé de fabrication
WO2011059205A2 (fr) Grille de connexion et procédé de fabrication de celle-ci
WO2015076614A1 (fr) Prise constituée d'un unique corps isolant
WO2016167412A1 (fr) Douille conductrice bidirectionnelle pour le test de dispositif à haute fréquence, module conducteur bidirectionnel pour le test de dispositif à haute fréquence et procédé de fabrication associé
WO2017061656A1 (fr) Sonde de test de kelvin, module de sonde de test de kelvin, et leur procédé de fabrication
WO2022181951A1 (fr) Module d'alignement et procédé de transfert d'alignement pour broches de contact électroconductrices
WO2012011627A1 (fr) Carte sonde et son procédé de fabrication
WO2011055984A2 (fr) Grille de connexion et son procédé de fabrication
WO2022169196A1 (fr) Broche de contact électroconductrice
US20040135594A1 (en) Compliant interposer assembly for wafer test and "burn-in" operations
WO2019088323A1 (fr) Structure d'empilement d'élément électronique utilisant un élément de transfert, équipement de transfert destiné à la fabrication d'un élément électronique et procédé de fabrication d'élément électronique
CN112285395A (zh) 一种探针卡及其制造方法
JPH11154694A (ja) ウェハ一括型測定検査用アライメント方法およびプローブカードの製造方法
WO2012153895A1 (fr) Alvéole pour essai de semi-conducteur

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10855056

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10855056

Country of ref document: EP

Kind code of ref document: A1