WO2012011627A1 - Carte sonde et son procédé de fabrication - Google Patents

Carte sonde et son procédé de fabrication Download PDF

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Publication number
WO2012011627A1
WO2012011627A1 PCT/KR2010/005900 KR2010005900W WO2012011627A1 WO 2012011627 A1 WO2012011627 A1 WO 2012011627A1 KR 2010005900 W KR2010005900 W KR 2010005900W WO 2012011627 A1 WO2012011627 A1 WO 2012011627A1
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WO
WIPO (PCT)
Prior art keywords
probe
base substrate
contact
conductive
probe module
Prior art date
Application number
PCT/KR2010/005900
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English (en)
Korean (ko)
Inventor
조병호
조용호
이은제
임형준
Original Assignee
(주) 마이크로프랜드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주) 마이크로프랜드 filed Critical (주) 마이크로프랜드
Publication of WO2012011627A1 publication Critical patent/WO2012011627A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06727—Cantilever beams

Definitions

  • the present invention relates to a probe card used as a semiconductor inspection equipment and a method for manufacturing the same, and more particularly, to a probe card and a method for manufacturing the probe module and the space transducer separately manufactured by bonding.
  • a probe card electrically connects a wafer and a semiconductor inspection device to test for defects during or after the manufacture of a semiconductor device such as a semiconductor memory or a flat panel display (FPD), thereby transmitting an electrical signal from the inspection device to the wafer. It is a device for transmitting to the formed semiconductor die (die), and transmits a signal from the semiconductor die to the semiconductor inspection equipment.
  • a semiconductor inspection device such as a semiconductor memory or a flat panel display (FPD)
  • FPD flat panel display
  • the conventional general probe card has a structure of a space transformer connected to a printed circuit board electrically connected to a semiconductor inspection equipment through an interposer, and a probe mounted on the space converter and connected to a wafer. .
  • the spatial transducer performs a function of pitch conversion between the probe and the printed circuit board to inspect a fine pitch contact pad, and is typically in the form of a multi layer ceramic (MLC) in which a green sheet is formed in multiple layers. Is produced by.
  • MLC multi layer ceramic
  • the probe module has a structure in which a probe is formed on a single crystal silicon substrate.
  • the space transducer is made of ceramic, and thus, the thermal expansion rate of the space transducer and the probe module is different, which causes misalignment between the probe module and the space transducer in a high temperature process.
  • electrical signal transmission is not made.
  • the present invention has been made to solve the above-mentioned problems in the prior art, and manufactures a probe module using a new material which is cheaper than silicon and has a thermal expansion rate similar to that of a ceramic material of a space transducer, thereby reducing manufacturing costs.
  • the main challenge is to reduce the cost and to maintain the alignment between the probe module and the space transducer even in a high temperature process.
  • the probe card according to the present invention is a space converter in which a conductive metal contact electrically connected to a printed circuit board is formed therein, and a plurality of pads for energizing the contact are formed on an upper surface thereof.
  • a probe module manufactured separately from the space transducer and bonded to an upper surface of the space transducer wherein the probe module comprises: a base substrate made of LTCC or HTCC material; A plurality of probes formed on an upper surface of the base substrate and electrically connected to the semiconductor wafer; A base contact formed in the base substrate to conduct electricity with the probe; And a plurality of conductive solders formed on the bottom surface of the base substrate to conduct electricity to the base contacts, and thermally fused to the pads during bonding of the probe module and the space transducer.
  • the base contact is made of Ag material, and when the base substrate is made of HTCC material, the base contact is preferably made of W material.
  • the probe module may further include an upper plating layer formed on the upper surface of the base substrate by a MEMS method and conducting electricity to the base contact; An upper insulating layer of PI material formed on the upper surface of the base substrate by a MEMS method; The upper contact layer is formed in the upper insulating layer by a MEMS method, and the upper contact is made of a conductive metal material to conduct electricity with the upper plating layer and the probe.
  • the probe module may further include a lower plating layer formed on the bottom surface of the base substrate by a MEMS method and conducting electricity to the base contact; A lower insulating layer of PI material formed on the bottom surface of the base substrate in a MEMS manner; The lower contact layer is formed inside the lower insulating layer by a MEMS method, and the lower contact layer is made of a conductive metal material that conducts electricity to the lower plating layer and the conductive solder.
  • the said electroconductive solder does not contain Pb and consists of alloy composition of Sn, Ag, and Cu.
  • the probe card according to the present invention the first alignment key formed on the upper surface of the space transducer; And a second alignment key formed at a position corresponding to the first alignment key on the bottom surface of the probe module so that the conductive solder may be aligned on each pad during the bonding of the probe module and the space transducer. Can be.
  • one of the first alignment key and the second alignment key is made of a protrusion structure, and the other is made of a seating groove structure in which the protrusion structure can be accommodated.
  • the center of the conductive solder protrudes downward, and the center of the pad is recessed to accommodate the center of the protruding conductive solder.
  • the probe card may further include a solder support part formed of a material which is not melted during the thermal fusion process between the conductive solder and the pad and inserted into the conductive solder to support the probe module.
  • a method of manufacturing a probe card may include: manufacturing a space converter in which a contact made of a conductive metal electrically connected to a printed circuit board is formed therein, and a plurality of pads passing through the contact are formed on an upper surface thereof; Dividing a base substrate made of LTCC or HTCC material into a probe module having a predetermined size, forming a plurality of base contacts made of a conductive metal material in the base substrate, and a plurality of probes that energize the base contact on an upper surface of the base substrate Forming a plurality of conductive solders that conduct electricity to the base contacts on a bottom surface of the base substrate, and separating the probe module from the base substrate; Thermally fusion each conductive solder to the pad, thereby bonding the probe module to the upper surface of the space transducer so as to conduct electricity.
  • FIG. 1 is a cross-sectional view showing a probe card according to the present invention.
  • FIGS. 2A and 2B are side cross-sectional and bottom views of a spatial transducer according to the present invention.
  • 3A and 3B are side cross-sectional and bottom views of a probe module according to the present invention.
  • 3C and 3D are side cross-sectional views illustrating a probe module according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a conductive solder according to the present invention.
  • Figure 5 is a cross-sectional view showing a probe card manufacturing method according to the present invention.
  • FIGS. 6 and 7 are cross-sectional views showing a method for manufacturing a probe module according to the present invention.
  • FIG. 1 shows a structure of a probe card according to the present invention
  • FIGS. 2A and 2B and FIGS. 3A and 3B show a configuration of a space converter and a probe module according to the present invention
  • 3C and 3D illustrate a probe module structure according to an embodiment of the present invention
  • FIG. 4 illustrates a structure of a conductive solder according to the present invention.
  • a probe card according to the present invention includes a space transducer 10 electrically connected to a printed circuit board, a probe manufactured separately from the space transducer 10, and then bonded to an upper surface of the space transducer 10.
  • Module 30 is configured.
  • the printed circuit board receives an electrical signal transmitted from the semiconductor inspection equipment, and transmits the received electrical signal to the probe 40 mounted on the probe module 30 through the space converter 10, while the probe ( And circuitry for forwarding the signal transmitted from 40 to the semiconductor inspection equipment in the reverse direction.
  • the space converter 10 includes a conductive metal contact electrically connected to a printed circuit board, and a plurality of pads 16 electrically connected to the contact are formed on an upper surface thereof, and the probe 40 And a multilayer substrate structure to perform a function of pitch conversion between the printed circuit board and the printed circuit board.
  • the probe module 30 is formed in the base substrate 32, the plurality of probes 40 formed on the upper surface of the base substrate 32 and electrically connected to the semiconductor wafer, and the base substrate 32.
  • the base contact 33 is electrically connected to the probe 40, and a plurality of conductive solders 36 are formed on the bottom surface of the base substrate 32 to electrically conduct the base contact 33.
  • the base substrate 32 is preferably made of a ceramic material of LTCC or HTCC, not a conventional silicon material.
  • Low temperature co-fired ceramics refers to a ceramic material capable of co-firing with a low temperature melting point metal below 1000 ° C.
  • the base contact 33 formed inside the base substrate 32 in order to conduct electricity between the probe 40 and the conductive solder 36 is preferably made of Ag material. Do.
  • the HTCC High Temperature Co-fired Ceramics
  • the HTCC represents a ceramic material capable of co-firing with a high temperature melting point metal of 1500 ° C. or more, which is a relatively high temperature.
  • the base substrate in consideration of the high melting point of W HTCC is used as the material for (33).
  • the base substrate 32 may have a multilayer substrate structure through a MEMS process. That is, the probe module 30 may be formed on the upper surface of the base substrate 32 by the MEMS method, and may be formed of the upper plating layer 34 made of a conductive metal material which is in electrical communication with the base contact 33 and the base substrate 32.
  • a structure including a contact 37 may be formed, and the probe 40 may be formed on an upper surface of the upper insulating layer 35.
  • the above-described upper plating layer 34, the upper insulating layer 35, and the upper contact 37 may be repeatedly formed on the upper surface of the base substrate 32 to form a multilayer structure.
  • the polyimide (PI) forming the upper insulating layer 35 represents a general term of a heat resistant resin having an imide bond (-CO-NH-CO-) in a main chain, which is characterized by high heat resistance. It belongs to the highest class among engineering plastics, and it has the advantage that the characteristic does not age even after long-term use at high temperature.
  • the interval of the probe 40 is also minutely arranged for the inspection of wafers having an increasingly fine circuit structure, and accordingly, the probe module is a multilayer in which a large number of insulating layers are stacked in order to change the pitch of the probe 40. It may be required to be structured. However, as illustrated in FIG. 3C, it is limited to stack a plurality of insulating layers 35 only on the top surface of the base substrate 32.
  • the insulating layer is formed on both the upper and lower surfaces of the base substrate 32 so that the pitch conversion of the probe 40 can be stably applied.
  • the probe module 30 is the upper plating layer 34, the upper insulating layer 35 and the upper contact 37 on the upper surface of the base substrate 32 in the MEMS method
  • the lower plating layer 34a, the lower insulating layer 35a, and the lower contact 37a are sequentially formed through the MEMS method on the bottom surface of the base substrate 32.
  • a lower plating layer 34a of a conductive metal material electrically connected to the base contact 33 is formed on the bottom surface of the base substrate 32 by a MEMS method, and the lower insulating layer 35a of a PI material is formed of MEMS. Is formed in a manner.
  • a lower contact 37a of a conductive metal material electrically connected to the lower plating layer 34a is formed in the lower insulating layer 35a by MEMS, and the lower contact 37a is electrically connected to the conductive solder 36. Is connected.
  • the probe 40 may have a probe structure for electrically connecting to a semiconductor wafer, and may be manufactured on the upper surface of the base substrate 32 by a MEMS process.
  • the probe 40 is perpendicular to the proximal end 42 formed on the upper surface of the base substrate 32, the beam 44 extending laterally from the upper surface of the proximal end 42, and the other end of the beam 44. It is configured to include a probe tip 46 that protrudes.
  • the proximal end 42 protrudes to a predetermined height from the upper surface of the base substrate 32 and is made of a conductive metal material.
  • the beam 44 has a structure extending in the lateral direction from the upper surface of the base end 42, one end is fixedly attached to the upper surface of the base end (42).
  • the beam 44 has an arbitrary length in the lateral direction so as to elastically support the probe tip 46, and is made of a conductive metal material similarly to the base end 42.
  • a probe tip 46 electrically connected to the semiconductor wafer protrudes vertically.
  • the probe 40 is formed on the upper surface of the upper insulating layer 35.
  • the conductive solder 36 formed on the bottom surface of the base substrate 32 is a component for bonding the probe module 30 to the space transducer 10 and is made of a material in which the surface is melted by external heat. Accordingly, in the process of bonding the probe module 30 to the space converter 10, each conductive solder 36 is thermally fused to the corresponding pad 16.
  • the conductive solder 36 is preferably made of a lead-free solder containing no Pb, and particularly preferably made of an alloy composition of Sn, Ag, and Cu.
  • the conductive solder 36 may conduct electricity with the probe 40 through the base contact 33 formed in the base substrate 32, and transmit electrical signals transmitted and received through the probe 40 to the space converter 10. It is configured to be.
  • First alignment keys 18 may be formed to align the alignment between the pads 16.
  • the first alignment key 18 may have a mounting groove structure in which the second alignment key 38 of the probe module 30 to be described later may be accommodated.
  • the pad 16 may have a conventional flat structure, but more precisely the alignment between the conductive solder 36 and the pad 16 during the bonding process of the probe module 30 and the space transducer 10.
  • a concave groove may be formed in the center of the pad 16 so that the conductive solder 36 can be inserted.
  • the bottom surface of the probe module 30 arranges an alignment between the conductive solder 36 and the pad 16 at a position corresponding to the first alignment key 18.
  • a second align key 38 can be formed for fitting.
  • the first alignment key 18 and the second alignment key 18 may be accurately aligned with the top surface of the pad 16 during the bonding process between the probe module 30 and the space transducer 10.
  • the align key 38 is formed at a position corresponding to each other.
  • the second alignment key 38 has a protrusion structure protruding downward from the bottom surface of the base substrate 32, and the seating groove structure described above in the bonding process between the probe module 30 and the space transducer 10. And to be inserted into the first alignment key 18 of.
  • the first alignment key 18 may have a protrusion structure
  • the second alignment key 38 may have a seating groove structure for accommodating the first alignment key 18. have.
  • the second alignment key 38 has a cross-shaped protrusion structure of "+" shape, and the first alignment key 18 corresponding thereto is also configured to have a cross-shaped seating groove structure. It is preferable to facilitate the fastening of the 18 and the align key 38.
  • the conductive solder 36 may be formed of a conventional flat structure or a ball structure, but is aligned between the respective conductive solder 36 and the pad 16 during the bonding process of the probe module 30 and the space transducer 10.
  • the center of the conductive solder 36 may be configured to protrude to form a projection for insertion into the concave center of the above-described pad (16). Accordingly, in the process of bonding the probe module 30 and the space transducer 10, the protruding center portion of the conductive solder 36 is inserted into the concave center portion of the pad 16, thereby providing the respective conductive solder 36 and the pad 16. The alignment between can be made more accurately.
  • the conductive solder 36 according to the present invention should be made of a material that can melt the surface by heat, a plurality of conductive solder 36 may not all melt to the same level. That is, when some of the conductive solder 36 is further melted in the process of bonding the conductive solder 36 to the pad 16 while the conductive solder 36 is melted by external heat, the thickness of the conductive solder 36 is lowered and the pro-module module is lowered. There may be a problem that the horizontal state of 30 is not maintained.
  • the conductive solder 36 As shown in Figure 4, the solder support 35 made of a material that does not melt during the thermal fusion process of the conductive solder 36 and the pad 16 ) Is configured to have a structure that is inserted therein. Therefore, even if some of the conductive solder 36 is melted more than necessary, because the solder support 35 inserted therein can support the probe module 30 in the unmelted state, the horizontal state of the probe module 30 Can be maintained.
  • FIGS. 6 and 7 show a process for manufacturing a probe module according to the present invention, respectively.
  • the probe module 30 and the space transducer 10 may be electrically connected to each other. It is done in a way.
  • the manufacturing process of the probe module 30 according to the first embodiment is as follows.
  • the base substrate 32 made of LTCC or HTCC material is divided into probe modules 30 having a predetermined size. That is, the base substrate 32 made of the LTCC or HTCC material is divided into a plurality of probe modules 30, wherein the size of each probe module 30 is set in advance so as to be bonded to the space transducer 10.
  • a plurality of base contacts 33 made of a conductive metal material are formed in the base substrate 32.
  • the base contact 33 may be formed by drilling a via hole in the base substrate 32 by a MEMS method and plating a conductive metal material in each via hole.
  • the base contact 33 is made of Ag material, and when the base substrate 32 is made of HTCC material, the base contact 33 is It is preferable to consist of W material.
  • a plurality of probes 40 may be formed on the upper surface of the base substrate 32 to conduct electricity to the base contact 33.
  • the probe 40 is preferably formed by the MEMS method as follows.
  • a base end 42 is formed on the base contact 33 on the upper surface of the base substrate 32.
  • a portion where the base end portion 42 is to be formed is exposed by exposure to a mask pattern, and then a conductive metal is exposed to the exposed portion.
  • the base end part 42 is formed by apply
  • the height of the base end portion 42 can be appropriately adjusted by repeating the photoresist coating and the lamination process of the conductive metal.
  • one end is fixedly attached to the upper surface of the base end 42, and forms a beam 44 extending in the lateral direction.
  • the photoresist is applied to form a photoresist layer
  • the portion on which the beam 44 is to be formed is exposed by exposure under a mask pattern, and then a conductive metal is applied to the exposed portion to apply the beam 44.
  • a conductive metal is applied to the exposed portion to apply the beam 44.
  • the probe tip 46 which is electrically connected to the semiconductor wafer, is formed to protrude perpendicularly from the other end of the beam 44.
  • a plurality of conductive solders 36 are formed on the bottom surface of the base substrate 32.
  • the conductive solders 36 are formed on the bottom surface of the base substrate 32 by MEMS or paste. Can be attached.
  • the second alignment key 38 is disposed on the bottom surface of the base substrate 32 in order to align the conductive solder 36 and the pad 16.
  • the process of forming may be further included.
  • the probe module 30 is separated from the base substrate 32.
  • the probe module 30 includes a plurality of base contacts 33, the probe 40, the conductive solder 36, and the second alignment. Keys 38 are formed respectively.
  • the probe module 30 is bonded to the top surface of the space transducer 10, wherein each conductive solder 36 corresponds to a pad.
  • the probe module 30 and the space transducer 10 are electrically connected to each other.
  • the manufacturing process of the probe module 30 according to the second embodiment is as follows.
  • a plurality of base contacts 33 made of a conductive metal material are formed in the base substrate 32. do.
  • an upper plating layer 34 of a conductive metal material electrically connected to the base contact 33 is formed on the upper surface of the base substrate 32 by a MEMS method.
  • a seed layer is formed by depositing a conductive metal material such as Cu or Au on the upper surface of the base substrate 32, and a photoresist is formed by applying a photoresist in a dot pattern on the seed layer to form a mask pattern.
  • the seed layer of the dot pattern is formed by etching and removing the remaining seed layers except for the portion where the upper plating layer 34 is to be formed.
  • the upper plating layer 34 is formed by plating a metal material on the seed layer of the dot pattern.
  • the upper insulating layer 35 of PI material is formed on the upper surface of the base substrate 32 by the MEMS method.
  • the upper insulating layer may be formed by coating a liquid PI material on the upper surface of the base substrate 32 on which the upper plating layer 34 is formed, and then firing or compressing the solid PI material on the upper surface of the base substrate 32. 35).
  • an upper contact 37 of a conductive metal material electrically connected to the upper plating layer 34 is formed in the upper insulating layer 35 by a MEMS method.
  • a via hole communicating with the upper plating layer 34 is formed in the upper insulating layer 35 by forming a photoresist layer and mask patterning, and plating a conductive metal material such as Cu or Au in the via hole.
  • a conductive metal material such as Cu or Au
  • a probe 40 that conducts electricity to the upper contact 37 is formed on the upper insulating layer 35 formed as described above by using a MEMS method.
  • the upper plating layer 34a, the upper insulating layer 35a, and the upper contact 37a may be formed on the bottom surface of the base substrate 32.
  • the probe module 30 and the space transducer 10 are separately manufactured as described above, the probe module 30 and the space transducer 10 are bonded to each other. In this case, it is most important to align the alignment between the conductive solder 36 formed on the bottom surface of the probe module 30 and the pad 16 formed on the top surface of the space converter 10. If the alignment is not performed properly between some of the conductive solder 36 and the pad 16, the electrical signal transmission between the probe 40 and the printed circuit board is not made, which may lead to a defect of the probe card. to be.
  • a first alignment key 18 and a second alignment key 38 formed at corresponding positions of the probe module 30 and the space transducer 10 are provided. In this case, alignment between the conductive solder 36 and the pad 16 is achieved.
  • the probe may be accommodated in the first alignment key 18 of the mounting groove structure formed on the upper surface of the space transducer 10, the second alignment key 38 of the protrusion structure formed on the bottom surface of the probe module 30 The module 30 is brought into contact with the top surface of the space transducer 10.
  • each of the conductive solders 36 is in contact with the pads 16 at the corresponding positions, where the conductive solders 36 The protruding center of the pad is inserted into the concave center of the pad 16.
  • each conductive solder 36 is in contact with the corresponding pad 16, when the conductive solder 36 is heated, the surface of the conductive solder 36 is melted and thermally fused to the pad 16.
  • the probe card 30 to which the probe module 30 is electrically connected to the space transducer 10 can be completed.
  • the manufacturing cost of the probe module can be reduced by manufacturing the LTCC or HTCC material, and the probe module and the space transducer are made of a material having a similar thermal expansion rate. The alignment between the transducers can be maintained.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L'invention concerne une carte sonde et son procédé de fabrication. Le procédé comprend: un processus de fabrication d'un transformateur d'espace, prévu avec une borne métallique conductrice, électriquement reliée à une carte de circuit imprimé, et sur sa surface supérieure avec plusieurs pastilles qui permettent au courant électrique de s'écouler vers la borne; un processus de fabrication d'un module de sonde qui consiste notamment: à diviser un substrat de base à base d'un matériau LTCC ou HTCC en modules de sonde de dimension prédéterminée, à former plusieurs bornes conductrices de base métallique à l'intérieur du substrat de base, à former plusieurs sondes qui permettent au courant électrique de s'écouler vers la borne de base sur la surface supérieure du substrat de de base, à former plusieurs soudures conductrices qui permettent à un courant électrique de s'écouler vers la borne de base sur la surface inférieure du substrat de base, et à séparer les modules de sonde du substrat de base; et un processus de liaison du module de sonde qui permet au courant de s'écouler sur la surface supérieure du transformateur d'espace par fusion thermique de chaque soudure conductrice aux pastilles.
PCT/KR2010/005900 2010-07-19 2010-09-01 Carte sonde et son procédé de fabrication WO2012011627A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0069722 2010-07-19
KR20100069722 2010-07-19

Publications (1)

Publication Number Publication Date
WO2012011627A1 true WO2012011627A1 (fr) 2012-01-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454710B (zh) * 2012-09-19 2014-10-01 Mpi Corp Probe card and its manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020057351A (ko) * 2001-01-04 2002-07-11 윤종용 볼 그리드 어레이 패키지와 그 실장 구조
US20060033516A1 (en) * 2000-08-24 2006-02-16 Rincon Reynaldo M Multiple-chip probe and universal tester contact assemblage
KR20070026632A (ko) * 2004-05-24 2007-03-08 동경 엘렉트론 주식회사 적층 기판 및 프로브 카드
KR20090074456A (ko) * 2008-01-02 2009-07-07 주식회사 탑 엔지니어링 Ｍｅｍｓ프로브 카드용 다층 박막 기판의 제조 방법
KR20090117218A (ko) * 2008-05-09 2009-11-12 윌테크놀러지(주) 프로브 카드의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060033516A1 (en) * 2000-08-24 2006-02-16 Rincon Reynaldo M Multiple-chip probe and universal tester contact assemblage
KR20020057351A (ko) * 2001-01-04 2002-07-11 윤종용 볼 그리드 어레이 패키지와 그 실장 구조
KR20070026632A (ko) * 2004-05-24 2007-03-08 동경 엘렉트론 주식회사 적층 기판 및 프로브 카드
KR20090074456A (ko) * 2008-01-02 2009-07-07 주식회사 탑 엔지니어링 Ｍｅｍｓ프로브 카드용 다층 박막 기판의 제조 방법
KR20090117218A (ko) * 2008-05-09 2009-11-12 윌테크놀러지(주) 프로브 카드의 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454710B (zh) * 2012-09-19 2014-10-01 Mpi Corp Probe card and its manufacturing method
US9341648B2 (en) 2012-09-19 2016-05-17 Mpi Corporation Probe card and manufacturing method thereof

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