WO2018135674A1 - Module à motifs conducteurs bidirectionnels - Google Patents

Module à motifs conducteurs bidirectionnels Download PDF

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Publication number
WO2018135674A1
WO2018135674A1 PCT/KR2017/000594 KR2017000594W WO2018135674A1 WO 2018135674 A1 WO2018135674 A1 WO 2018135674A1 KR 2017000594 W KR2017000594 W KR 2017000594W WO 2018135674 A1 WO2018135674 A1 WO 2018135674A1
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WO
WIPO (PCT)
Prior art keywords
main
hole
holes
conductive
wall
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PCT/KR2017/000594
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English (en)
Korean (ko)
Inventor
문해중
이은주
정주연
Original Assignee
주식회사 이노글로벌
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Publication of WO2018135674A1 publication Critical patent/WO2018135674A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures

Definitions

  • the present invention relates to a bidirectional conductive pattern module, and more particularly, it is possible to replace a pogo-pin type semiconductor test socket, and to test at high speed with stable signal transmission, and to enable high-speed CPU and board.
  • the present invention relates to a bidirectional conductive pattern module applicable to an interposer that electrically connects a CPU and a board between them.
  • the semiconductor device After the semiconductor device is manufactured, the semiconductor device performs a test to determine whether the electrical performance is poor.
  • the positive test of the semiconductor device is performed by inserting a semiconductor test socket (or a contactor or a connector) formed between the semiconductor device and the test circuit board so as to be in electrical contact with a terminal of the semiconductor device.
  • the semiconductor test socket is also used in a burn-in test process during the manufacturing process of the semiconductor device, in addition to the final positive inspection of the semiconductor device.
  • the conventional Pogo-pin type semiconductor test socket has a limitation in manufacturing a semiconductor test socket for testing a semiconductor device to be integrated.
  • 1 to 3 are diagrams showing an example of a conventional Pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.
  • the conventional semiconductor test socket 1100 includes a housing 1110 having a through hole 1111 formed in a vertical direction at a position corresponding to the terminal 1131 of the semiconductor device 1130, and Pogo-pins 1120 mounted in the through holes 1111 of the housing 1110 to electrically connect the terminals 1131 of the semiconductor device 1130 and the pads 1141 of the test apparatus 1140. Is done.
  • the configuration of the pogo-pin 1120 is a barrel 1124, which is used as a pogo-pin body and has a hollow cylindrical shape, and is formed below the barrel 1124.
  • a semiconductor device connected to a contact tip 1123, a spring 1122 connected to the contact tip 1123 inside the barrel 1124 and contracting and expanding, and opposite to a spring 1122 connected to the contact tip 1123. It is composed of a contact pin 1121 to perform the vertical movement according to the contact with 1130.
  • the spring 1122 contracts and expands, while absorbing the mechanical shock transmitted to the contact pins 1121 and the contact tips 1123, the springs 1122 of the terminals 1131 and the test apparatus 1140 of the semiconductor device 1130.
  • the pad 1141 is electrically connected to check whether there is an electrical failure.
  • the conventional Pogo-pin type semiconductor test socket as described above uses a physical spring to maintain elasticity in the vertical direction, inserts the spring and the pin into the barrel, and Since the process has to be inserted into the through-hole of the housing again, the process is complicated and the manufacturing cost increases due to the complexity of the process.
  • the physical configuration itself for the implementation of the electrical contact structure having elasticity in the vertical direction has a limit to implement the fine pitch, and the situation has already reached the limit to apply to the integrated semiconductor device in recent years.
  • the pogo-pin type semiconductor test socket is connected to the connecting tip 1123, the spring 1122, and the connecting pin 1121 in the upper and lower directions. Because of this structure, there is a limit in reducing the length in the vertical direction, which is a limit in testing a high-speed device.
  • the pogo-pin semiconductor test socket is used in a structure for electrically connecting two devices in addition to the test of the semiconductor device.
  • a high-speed CPU for example, an interposer connecting a pin of a CPU and a terminal of a board between a CPU and a board used in a large-capacity server.
  • the area of the CPU is larger than that of a general PC, and the number of pins is more than 1000, and if a direct contact is made with a terminal of a board, contact failure may occur.
  • a pin-type interposer elastically connects the two devices in the vertical direction.
  • An object of the present invention is to provide a bidirectional conductive pattern module that can be applied to an interposer that electrically connects a CPU and a board between a board and a board.
  • a main body formed by stacking a plurality of base substrates having an insulating layer of an insulating material and a conductive layer formed on one surface or both surfaces of the insulating layer and stacked in the vertical direction; ; A plurality of main through holes penetrating through the main body in a vertical direction; An inner insulating wall made of an insulating material applied to the inner wall surface side of each of the main through holes; An inner conductive wall formed between at least one of the plurality of main through holes and between an inner wall surface and a corresponding inner insulating wall to electrically connect the conductive layers of the plurality of base substrates; An upper support layer having an elastic insulating material attached to an upper surface of the main body and having a plurality of upper through holes respectively corresponding to the plurality of main through holes; A lower support layer attached to a lower surface of the main body and having an elastic insulating material having a plurality of lower through holes respectively corresponding to the plurality of main through holes;
  • the above object is, according to another embodiment of the present invention, in the bidirectional conductive pattern module, a plurality of base substrates having an insulating layer of insulating material and a conductive layer formed on one surface or both surfaces of the insulating layer in the vertical direction A main body laminated and formed; A plurality of main through holes penetrating through the main body in a vertical direction; An inner insulating wall made of an insulating material applied to the inner wall surface side of each of the main through holes; At least one sub through hole penetrating in the vertical direction of the main body; An inner conductive wall applied to an inner wall of the sub through hole and electrically connecting the conductive layers of the plurality of base substrates to each other; An upper support layer attached to an upper surface of the main body and having a plurality of upper through holes corresponding to the plurality of main through holes, respectively; A lower support layer attached to a lower surface of the main body and having a plurality of lower through holes respectively corresponding to the plurality of main through holes; Received
  • a bidirectional conductive pattern module comprising: a main body having an insulating layer of insulating material and conductive layers formed on both surfaces of the insulating layer; A plurality of main through holes penetrating through the main body in a vertical direction; An inner insulating wall made of an insulating material applied to the inner wall surface side of each of the main through holes; An inner conductive wall formed between at least one of the plurality of main through holes and between the inner wall surface and the insulating wall to electrically connect the conductive layers on both sides; An upper support layer having an elastic insulating material attached to an upper surface of the main body and having a plurality of upper through holes respectively corresponding to the plurality of main through holes; A lower support layer attached to a lower surface of the main body and having an elastic insulating material having a plurality of lower through holes respectively corresponding to the plurality of main through holes; Received in each of the plurality of main through holes, the upper surface is exposed
  • the inner conductive wall may be formed in each of the plurality of main through holes.
  • each of the bidirectional conductive pins may be electrically isolated from the conductive layers by the respective inner insulating walls in the main through hole, and the conductive layers and the inner conductive walls electrically connected to each other may be grounded. Do.
  • the inner diameters of the upper through hole and the lower through hole may be smaller than the inner diameter of the main through hole.
  • the upper support layer includes an upper film layer and an upper silicon layer formed sequentially from the upper surface of the body;
  • the lower support layer may include a lower film layer and a lower silicon layer sequentially formed from the lower surface of the body.
  • the main through hole may be filled with an elastic silicon material.
  • the electronic device may further include a ground part electrically connected to the conductive layer and connected to an external ground to connect the conductive layer to the ground.
  • the ground part penetrates the first ground through-hole penetrating the body in the vertical direction, and the second ground through-hole and the third ground penetrating part formed in the upper support part and the lower support part to communicate with the first ground through-hole. It may include a hole and a ground conductive wall is applied to the inner wall ⁇ of the first ground through hole and electrically connected to the conductive layer.
  • the bidirectional conductive pin is formed in the upper contact portion is formed by rolling a cylindrical plate with conductivity in a cylindrical shape in the vertical direction
  • the thin plate with conductivity is formed by rolling a cylindrical shape in the axis in the vertical direction and the lower portion of the upper contact portion
  • a lower contact portion disposed to be spaced apart from and electrically connecting the upper contact portion and the lower contact portion, and a connecting portion having a ⁇ shape to a space between the upper contact portion and the lower contact portion;
  • An upper surface of the upper contact portion may be exposed upward through the upper through hole, a lower surface of the lower contact portion may be exposed downward through the lower through hole, and the connection part may be accommodated in the main through hole.
  • the bidirectional conductive pin may include an upper contact portion in which a thin conductive plate is rolled in a cylindrical shape in an up and down direction, and a thin conductive sheet is rolled in a cylindrical shape in an up and down direction, and a lower portion of the upper contact portion is formed.
  • a lower contact portion spaced apart from and at least one connecting portion electrically connecting the upper contact portion and the lower contact portion;
  • the connecting portion is connected to the upper contact portion and the lower contact portion at mutually different positions in the circumferential direction, and connects the upper contact portion and the lower contact portion in a form wound around the circumferential direction, and an upper surface of the upper contact portion passes through the upper portion.
  • the upper surface of the lower contact portion may be exposed through the hole, and the lower surface of the lower contact portion may be exposed downward through the lower through hole, and the connection part may be accommodated in the main through hole.
  • 1 to 3 are diagrams for explaining a conventional Pogo-pin type semiconductor test socket
  • FIG. 4 is a perspective view of a bidirectional conductive pattern module according to a first embodiment of the present invention.
  • FIG. 5 is a cross-sectional view taken along the line VV of FIG. 4,
  • FIG. 6 to 9 are views for explaining the manufacturing process of the bidirectional conductive pattern module according to the first embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of a bidirectional conductive pattern module according to a second embodiment of the present invention.
  • FIG. 11 and 12 are views for explaining a manufacturing process of a bidirectional conductive pattern module according to a second embodiment of the present invention.
  • 13 to 16 are diagrams for describing embodiments of the bidirectional conductive pin of the bidirectional conductive pattern module according to the present invention.
  • the present invention relates to a bidirectional conductive pattern module, comprising: a main body formed by stacking a plurality of base substrates having an insulating layer of an insulating material and a conductive layer formed on one or both surfaces of the insulating layer; A plurality of main through holes penetrating through the main body in a vertical direction; An inner insulating wall made of an insulating material applied to the inner wall surface side of each of the main through holes; An inner conductive wall formed between at least one of the plurality of main through holes and between an inner wall surface and a corresponding inner insulating wall to electrically connect the conductive layers of the plurality of base substrates; An upper support layer having an elastic insulating material attached to an upper surface of the main body and having a plurality of upper through holes respectively corresponding to the plurality of main through holes; A lower support layer attached to a lower surface of the main body and having an elastic insulating material having a plurality of lower through holes respectively corresponding to the plurality of main through holes; Received in each
  • the bidirectional conductive pattern module 100 includes a main body 110, a plurality of main through holes 171, an inner insulating wall 130, and an inner portion.
  • the conductive wall 120, the upper support layer 140, the lower support layer 150, and the bidirectional conductive pin 160 are included.
  • a plurality of base substrates 111 are stacked in a vertical direction. 4 and 5, four base substrates 111 are stacked to form a main body 110.
  • the base substrate 111 includes an insulating layer 112 made of an insulating material, and conductive layers 113 and 114 formed on one or both surfaces of the insulating layer 112.
  • 4 and 5 illustrate examples in which the conductive layers 113 and 114 are formed on both surfaces of the insulating layer 112, but the conductive layers 113 and 114 may be formed only on one surface thereof.
  • the base substrate 111 may be provided in the form of a printed circuit board (PCB).
  • the printed circuit board is composed of an insulating layer 112 made of an insulating material, for example, FR4, and conductive layers 113 and 114 made of copper. It is preferable to use a printed circuit board as the base substrate 111 according to the present invention. .
  • the plurality of main through holes 171 are formed to penetrate in the vertical direction of the main body 110 (see FIG. 7).
  • 16 main through holes 171 are formed as an example, but the number is not limited thereto, and when applied as an interposer between the CPU and the board, more than 1000 main through holes 171 may be formed. It may be.
  • the inner insulating wall 130 is applied to the inner wall surface of each main through hole 171, for example, provided with an insulating material.
  • the insulating silicon is formed inside, for example, but the material is not limited thereto.
  • the conductive layers 113 and 114 of the respective base substrates 111 and the bidirectional conductive pins 160 inserted into the main through holes 171 through the inner insulating wall 130 may be physically isolated to block the electrical connections. do.
  • the inner conductive wall 120 is formed between the inner wall surface of the main through hole 171 and the inner insulating wall 130 to electrically connect the conductive layers 113 and 114 of the base substrate 111 to each other. Through this, the conductive layers 113 and 114 of each layer forming the main body 110 are electrically connected to each other.
  • the bidirectional conductive pattern module 100 according to the present invention may be applied to a semiconductor test socket or to an interposer. In this case, when the conductive layers 113 and 114 are used as grounds, high speeds can be realized.
  • the bidirectional conductive pattern module 100 according to the present invention when used in a semiconductor test socket, when the conductive layers 113 and 114 are connected to the ground of the test circuit board, the bidirectional conductive pattern module 100 according to the present invention is used. ) Is grounded so that a stable signal can be transmitted through the bidirectional conductive pin 160. That is, the signal transmitted through the bidirectional conductive pin 160 is grounded by the surrounding conductive layers 113 and 114 and the inner conductive wall 120, thereby minimizing noise and mutual signal interference, thereby enabling stable signal transmission. High-speed implementations are possible.
  • the method of connecting the conductive layers 113 and 114 and / or the inner conductive wall 120 to an external ground may be connected through the ground portion 180 which will be described later.
  • the bidirectional conductive module 100 according to the present invention may be It may be connected in various forms according to the structure of the device applied.
  • the inner conductive wall 120 may be formed by sequentially performing nickel plating and gold plating, which will be described later.
  • the upper support layer 140 is attached to the upper surface of the body 110.
  • the upper support layer 140 is formed with upper through holes 172 at positions corresponding to the main through holes 171 formed in the main body 110, respectively.
  • the lower support layer 150 is attached to the lower surface of the body 110.
  • lower through holes 173 are formed at positions corresponding to the main through holes 171 formed in the main body 110, respectively.
  • the upper support layer 140 and the lower support layer 150 are each provided with a material having elasticity, in the present invention, the upper support layer 140 is the upper film layer 141 and the upper silicon layer 142 are sequentially stacked The lower support layer 150 is formed by stacking the lower film layer 151 and the lower silicon layer 152 sequentially.
  • Each bidirectional conductive pin 160 is accommodated in the main through hole 171, respectively, and the upper surface of the bidirectional conductive pin 160 is exposed upward through the upper through hole 172 of the upper support layer 140.
  • the lower surface of the bidirectional conductive pin 160 is exposed downward through the lower through hole 173 of the lower support layer 150.
  • the upper region of the bidirectional conductive pin 160 is supported by the upper support layer 140, and the lower region is supported by the lower support layer 150.
  • the ball (Ball) of the semiconductor device pressed from the upper direction to the lower direction is bidirectional
  • the upper surface of the conductive pin 160 is pressed to the bottom, and the bidirectional conductive pin 160 is supported by the upper support layer 140 to enable elastic support.
  • the bidirectional conductive pins 160 are formed between the semiconductor device and the test circuit board, or between the CPU and the board. Both devices are electrically connected to each other. At this time, each of the conductive layers 113 and 114 of the base substrate 111 and the inner conductive wall 120 are connected to an external ground, so that the ground is near the bidirectional conductive pin 160. It is possible to operate at high speed, as well as stable operation without noise or mutual interference.
  • the bidirectional conductive pattern module ( Since the thickness of 100 may be adjusted, the fabrication may be performed according to the condition in which the bidirectional conductive pattern module 100 is applied.
  • the bi-directional conductive pin 160 is made smaller in size than the existing pogo-pin according to the structure to be described later, the limit of the pitch and the length in the vertical direction of the existing pogo pin type The limitations can be overcome, enabling implementations of various sizes when applied to semiconductor test sockets or interposers.
  • the internal conductive walls 120 are formed in the entire plurality of main through holes 171, respectively, to electrically connect the conductive layers 113 and 114.
  • the inner conductive wall 120 may be electrically connected to the entire conductive layers 113 and 114 of the plurality of base substrates 111 even if only one of the main through holes 171 is formed.
  • the inner diameter of the upper through hole 172 and the lower through hole 173 is smaller than the inner diameter of the main through hole 171 (FIG. 5 is an enlarged area and FIG. 9B). It is taken as an example. Accordingly, the upper region and the lower region of the bidirectional conductive pin 160 are supported by the upper support layer 140 and the lower support layer 150, respectively, and the middle region is formed in the space inside the main through hole 171 and its inner wall surface. By maintaining the spaced apart state, the movement inside is free.
  • the bidirectional conductive pins 160 may be vertically moved through the empty space inside the main through hole 171.
  • the possibility of flow increases, and when the intermediate region of the bi-directional conductive pin 160 is composed of the connecting portion 163 which will be described later, or when the existing pogo-pin is used, the elastic force of the connecting portion 163 or the spring is used. This will work more smoothly, allowing for more stable testing.
  • the main through hole 171 may fill the inside with a silicone material having elasticity. In this case, the pressure is more strongly supported in the vertical direction.
  • the bidirectional conductive pattern module 100 may include a ground unit 180.
  • the ground part 180 is electrically connected to the conductive layers 113 and 114 and the inner conductive wall 120.
  • the ground unit 180 is connected to the ground of the test circuit board when the external ground, for example, the bidirectional conductive pattern module 100 according to the present invention is applied to the semiconductor test socket as described above.
  • 113 and 114 and the inner conductive wall 120 are connected to ground.
  • the ground portion 180 includes a first ground through hole 181, a second ground through hole 183, and a third ground through hole 184. And a ground conductive wall 182 as an example.
  • the first ground through hole 181 penetrates through the body 110 in the vertical direction.
  • the first ground through hole 181 may be formed together with the formation of the main through hole 171, which will be described later.
  • the second ground through hole 183 penetrates the upper support layer 140 in the vertical direction, and is formed at a position corresponding to the first ground through hole 181.
  • the third ground through hole 184 penetrates through the lower support layer 150 in the vertical direction, and is formed at a position corresponding to the first ground through hole 181.
  • the second ground through hole 183 and the third ground through hole 184 may be formed together when the upper through hole 172 and the lower through hole 173 are formed, which will be described later.
  • the ground conductive wall 182 is applied to the inner wall surface of the first ground through hole 181 and electrically connected to the conductive layers 113 and 114. As a result, when the ground conductive wall 182 is connected to an external ground, the conductive layers 113 and 114 of the bidirectional conductive pattern module 100 according to the present invention may operate as the ground.
  • a plurality of base substrates 111 are provided, and a plurality of base substrates 111 are stacked in an up and down direction to form a main body 110.
  • the four base substrates 111 are stacked to form the main body 110.
  • the number thereof is considered in consideration of the thickness of the main body 110 and the like. Can be determined.
  • the stacking of the base substrate 111 may be attached using an adhesive between the base substrate 111.
  • FIG. 6 illustrates that the base substrate 111 is configured in the form of a printed circuit board having conductive layers 113 and 114 formed on both sides of the insulating layer 112, as described above, one side of the insulating layer 112 is described. Of course, only the printed circuit board on which the conductive layers 113 and 114 are formed may be used.
  • a plurality of main through holes 171 are formed in the main body 110.
  • the first ground through hole 181 may be formed together.
  • 8 and 9 illustrate a manufacturing process through a cross section according to VIII-VIII.
  • the inner wall surface of each main through hole 171 is illustrated in FIG. 8.
  • the inner conductive wall 120 is formed.
  • the inner conductive wall 120 may be formed by sequentially performing nickel plating and gold plating. Through the formation of the inner conductive wall 120, the conductive layers 113 and 114 of each base substrate 111 are electrically connected to each other.
  • (b) of FIG. 8 illustrates that the inner conductive wall 120 is formed on the inner wall surfaces of all the main through holes 171, but as described above, the inside of the at least one main through hole 171 is included.
  • the inner conductive wall 120 may be formed on the wall.
  • the ground conductive wall 182 may be formed together on the inner wall surface of the first ground through hole 181.
  • the inner conductive wall 120 When the inner conductive wall 120 is formed on the inner wall surface of the main through hole 171, the inner wall surface (or the main through hole 171 of the inner wall surface) of the inner conductive wall 120 is illustrated in FIG. 8C. As shown, the inner insulation wall 130 is formed.
  • the internal insulating wall 130 may be formed by applying an insulating material, for example, silicon.
  • the first ground through hole 181 may not be formed on the inner wall surface of the ground conductive wall 182 formed on the inner wall surface of the first ground through hole 181.
  • the upper and lower portions of the inner insulating wall 130 may be formed.
  • the upper support layer 140 is formed on the upper portion of the main body 110, and the lower support layer (lower) on the lower portion of the main body 110. 150).
  • the upper support layer 140 may be formed by attaching the upper film layer 141 to the upper portion of the main body 110 and then applying the upper silicon layer 142.
  • the lower support layer 150 may be formed by attaching the lower film layer 151 to the lower portion of the main body 110 and then applying the lower silicon layer 152.
  • the upper through hole 172 and the lower through hole 173 are formed in the upper support layer 140 and the lower support layer 150, respectively.
  • the inner diameters of the upper through hole 172 and the lower through hole 173 may be smaller than the inner diameter of the main through hole 171 as described above.
  • the second ground through hole 183 and the second ground through hole 184 may be formed together.
  • the bidirectional conductive pin 160 When the bidirectional conductive pin 160 is inserted into each of the upper through hole 172, the main through hole 171, and the lower through hole 173, the bidirectional conductive pattern module 100 as illustrated in FIG. 5. Can be made.
  • the bidirectional conductive pin 160 may be configured to be supported by the upper support layer 140 and the lower support layer 150. Can be.
  • the plating is performed only on the inner wall surface of the main through hole 171 during the formation of the inner conductive wall 120, but both the upper surface and the lower surface of the main body 110 may be plated.
  • the insulating layer is formed only on the inner wall surface of the main through hole 171 and / or the inner wall surface of the inner conductive wall 120 during the formation of the inner insulation wall 130, but the upper portion of the main body 110 is formed.
  • An insulating layer may be formed on both the surface and the lower surface.
  • the configuration of the bidirectional conductive pattern module 100a according to the second embodiment of the present invention will be described with reference to FIG. 10.
  • the detailed description of the configuration corresponding to the configuration of the first embodiment can be omitted.
  • the bidirectional conductive pattern module 100a includes a main body 110a, a plurality of main through holes 171a, an inner insulating wall 130a, and an inner conductive wall. 120a and an upper support layer 140a, a lower support layer 150a, and a bidirectional conductive pin 160a.
  • the main body 110a includes an insulating layer 112a made of an insulating material and conductive layers 113a and 114a formed on both surfaces of the insulating layer 112a. That is, in the bidirectional conductive pattern module 100a according to the second embodiment of the present invention, one base substrate 111a forms the main body 110a unlike the first embodiment. In the second embodiment of the present invention, the main body 110a is applied to a printed circuit board on which conductive layers 113a and 114a are formed on both sides of the insulating layer 112a. Here, the thickness of the main body 110a can be adjusted by adjusting the thickness of the insulating layer 112a.
  • the plurality of main through holes 171a are formed to penetrate in the vertical direction of the main body 110a (see FIG. 11A). As in the first embodiment, the number of the main through holes 171a may vary depending on the terminals of the semiconductor device under test or the pins of the CPU.
  • the inner insulation wall 130a is applied to the inner wall surface of each of the main through holes 171a, and is provided as an example of an insulating material.
  • the insulating silicon is formed inside, for example, but the material is not limited thereto.
  • the conductive layers 113a and 114a of the main body 110a and the bidirectional conductive pins 160a inserted into the main through hole 171a are physically isolated through the internal insulating wall 130a to block the electrical connections. .
  • the inner conductive wall 120a is formed between the inner wall surface of the main through hole 171a and the inner insulating wall 130a to electrically connect the conductive layers 113a and 114a on both sides of the main body 110a. Through this, the conductive layers 113a and 114a of the main body 110a are electrically connected to each other.
  • the bidirectional conductive pattern module 100a according to the present invention is applied to a semiconductor test socket or an interposer, the conductive layers 113a and 114a are electrically connected. Using the layers 113a and 114a as ground enables high-speed implementation.
  • the inner conductive wall 120a may be formed by sequentially performing nickel plating and gold plating.
  • the upper support layer 140a is attached to the upper surface of the body 110a.
  • upper through holes 172a are formed at positions corresponding to the main through holes 171a formed in the main body 110a in the upper support layer 140a.
  • the lower support layer 150a is attached to the lower surface of the main body 110a.
  • the lower support layer 150a is formed with lower through holes 173a at positions corresponding to the main through holes 171a formed in the main body 110a, respectively.
  • the upper support layer 140a and the lower support layer 150a are each made of a material having elasticity.
  • the upper support layer 140a is formed of the upper film layer 141a and the upper silicon layer 142a.
  • the lower support layer 150a is formed by being sequentially stacked, and the lower film layer 151a and the lower silicon layer 152a are sequentially stacked.
  • Each bidirectional conductive pin 160a is accommodated in the main through hole 171a, respectively, and the upper surface of the bidirectional conductive pin 160a is exposed upward through the upper through hole 172a of the upper support layer 140a.
  • the lower surface of the bidirectional conductive pin 160a is exposed downward through the lower through hole 173a of the lower support layer 150a.
  • the upper region of the bidirectional conductive pin 160a is supported by the upper support layer 140a, and the lower region is supported by the lower support layer 150a.
  • the ball (Balla) of the semiconductor device pressed from the upper direction to the lower direction is bidirectional
  • the bi-directional conductive pin (160a) is supported by the upper support layer (140a) to enable elastic support.
  • the bidirectional conductive pin 160a is formed between the semiconductor device and the test circuit board, or between the CPU and the board. Both devices are electrically connected.
  • the conductive layers 113a and 114a and the inner conductive wall 120a formed on both sides of the insulating layer 112a of the main body 110a are connected to the external ground. Connected to the ground in the vicinity of the two-way conductive pin 160, it is possible to operate in high-speed as well as stable operation is excluded noise and mutual interference.
  • the thickness of the bidirectional conductive pattern module 100a can be adjusted, so that the bidirectional conductive pattern module 100a is manufactured according to the conditions to be applied. This becomes possible.
  • the bidirectional conductive pin 160a is made smaller in size than the existing pogo-pin according to the structure to be described later, the limit of the pitch and the length in the vertical direction of the conventional pogo pin type The limitations can be overcome, enabling implementations of various sizes when applied to semiconductor test sockets or interposers.
  • the inner conductive wall 120a is formed in the entire plurality of main through holes 171a, respectively, to electrically connect the conductive layers 113a and 114a.
  • the inner conductive wall 120a may be electrically connected to the entire conductive layers 113a and 114a of the plurality of base substrates 111a even if only one of the main through holes 171a is formed.
  • the main through hole 171a may be filled with a silicone material having elasticity. In this case, the pressure is more strongly supported in the vertical direction.
  • the bidirectional conductive pattern module 100a according to the present invention is applied to the interposer, the contact between the CPU and the board can be maintained more stably for a long time. do.
  • the ground portion 180 of the first embodiment may be applied to the second embodiment, and corresponds to the ground portion 180 of the first embodiment in the manufacturing process of the second embodiment, which will be described later.
  • the structure is applicable.
  • an insulating layer 112a and a main body 110a having conductive layers 113a and 114a formed on both sides thereof are provided. Then, as illustrated in FIG. 11B, a main through hole 171a is formed in the main body 110a.
  • an inner conductive wall 120a is formed on the inner wall surface of each main through hole 171a.
  • the inner conductive wall 120a may be formed by sequentially performing nickel plating and gold plating. Through the formation of the inner conductive wall 120a, the conductive layers 113a and 114a formed at both sides of the insulating layer 112a are electrically connected to each other.
  • (c) of FIG. 11 illustrates that the inner conductive wall 120a is formed on the inner wall surfaces of all the main through holes 171a. However, as described above, the inside of the at least one main through hole 171a is illustrated. Of course, the inner conductive wall 120a may be formed on the wall surface.
  • the inner wall surface (or the main through hole 171a of the inner wall surface) of the inner conductive wall 120a is illustrated in FIG. 12A.
  • the inner insulation wall 130a is formed.
  • the upper film layer 141a and the lower film layer 151 are formed on the upper surface and the lower surface of the main body 110a, respectively (see FIG. 12A), and the upper surface of the upper film layer 141a and The upper silicon layer 142a and the lower silicon layer 152a are formed on the lower surface of the lower film layer 151a, respectively, so that the upper support layer 140a and the lower support layer 150a as shown in FIG. To form.
  • the upper through hole 172a and the lower through hole 173a are formed in the upper support layer 140a and the lower support layer 150a, respectively.
  • the inner diameters of the upper through hole 172a and the lower through hole 173a may be smaller than the inner diameter of the main through hole 171a as in the above-described embodiment.
  • the bidirectional conductive pin 160a When the bidirectional conductive pin 160a is inserted into each of the upper through hole 172a, the main through hole 171a, and the lower through hole 173a, the bidirectional conductive pattern module 100a as shown in FIG. Can be made.
  • the upper surface of the upper support layer 140a that is, the upper silicon layer 142a and the bidirectional conductive pin 160a are fixed using silicon or the like, and the lower support layer 150a
  • the bidirectional conductive pin 160a is configured to be supported by the upper support layer 140a and the lower support layer 150a. Can be.
  • the bidirectional conductive pin 160 may include an upper contact portion 161, a lower contact portion 162, and a connection portion 163.
  • the upper contact portion 161 is formed by rolling a conductive thin plate in a cylindrical shape with an axis in the vertical direction.
  • the lower contact portion 162 is formed to be rolled so that the conductive thin plate has a cylindrical shape in the vertical direction, and is disposed in a state spaced apart from the lower portion of the upper contact portion 161.
  • the connecting portion 163 electrically connects the upper contact portion 161 and the lower contact portion 162, and is connected to the upper contact portion 161 and the lower contact portion 162 at mutually different positions in the circumferential direction, thereby providing a circumferential direction.
  • the upper contact portion 161 and the lower contact portion 162 are connected in a winding manner.
  • FIG. 14 is a view showing an example of the base thin plate 10 for manufacturing the bidirectional conductive pin 160 shown in FIG.
  • the base thin plate 10 as shown in FIG. 14 is manufactured by patterning the thin plate having conductivity.
  • the base thin plate 10 includes an upper pattern 11, a lower pattern 12, and a connection pattern 13.
  • the base sheet 10 is rolled in a circular shape from the left side to the right side of FIG. 14 through the mold, and the lower sheet is rolled circularly from the right side of FIG. 14 to the left side, the upper contact portion 161.
  • lower contact portions 162 are formed, respectively.
  • the connecting pattern 13 is rolled up along the circumferential direction, and the finally formed connecting portion 163 is different from each other in the circumferential direction. You will connect locations.
  • the bi-directional conductive pin 160 when the bi-directional conductive pin 160 is applied to the bi-directional conductive pattern module 100, the upper surface of the upper contact portion 161 is exposed in the upper direction through the upper through hole 172, the lower The lower surface of the contact portion 162 is exposed in the downward direction through the lower through hole 173, and the connection portion 163 is accommodated in the main through hole 171.
  • connection part 163 is accommodated inside the main through hole 171 in the form of being wound along the circumferential direction, thereby performing an elastic role when pressed downward, that is, playing the same role as the spring of the existing pogo-pin. Done.
  • the base thin plate 10 is formed by patterning the conductive thin plate, and the bidirectional conductive pin 160 is rolled by a method such as a mold, thereby making it possible to produce a smaller size than the existing pogo-pin.
  • the bidirectional conductive pin 160 may include a depression 164 recessed or cut inward at an outer diameter of the upper contact portion 161.
  • the upper support layer 140 elastically supports the upper contact portion 161 in the vertical direction when the upper support layer 140 holds the upper contact portion 161 and the upper contact portion 161 is pressed from the top to the lower direction. To perform the function.
  • the configuration of the recessed portion 164 may be applied to the bidirectional conductive pin 160a according to another embodiment to be described later, and may be applied to other types of pins that may be applied to the bidirectional conductive pattern module 100 according to the present invention. Do.
  • the bidirectional conductive pin 160a may include an upper contact portion 161a, a lower contact portion 162a, and a connection portion 163a.
  • the upper contact portion 161a and the lower contact portion 162a is the same as in the above-described embodiment that the conductive thin plate is formed by axially rolling in the vertical direction.
  • the connecting portion 163a electrically connects the upper contact portion 161a and the lower contact portion 162a, and has a ⁇ shape in the space between the upper contact portion 161a and the lower contact portion 162a.
  • FIG. 16 is a diagram for describing a manufacturing process of the bidirectional conductive pin 160a illustrated in FIG. 15.
  • the base plate 10a is produced by patterning a thin plate having conductivity.
  • FIG. 15A three base thin plates 10a are simultaneously formed on a thin plate.
  • the base thin plate 10a may include an upper pattern 11a, a lower pattern 12a, and a connection pattern 13a.
  • the patterning process is performed such that the base thin plates 10a are connected to each other through a connecting plate between the upper horizontal plate and the lower horizontal plate for the convenience of the work.
  • the upper pattern 11a and the lower pattern 12a are rolled up and down in an axial direction to form the upper contact portion 161a and the lower contact portion 162a as shown in FIG. 16B.
  • the connection pattern 13a is formed by pushing in the A direction to form the connection portion 163a. Then, by cutting the connecting plate, it is possible to manufacture the bi-directional conductive pin 160a.
  • the bidirectional conductive pins 160 and 160a are described as examples of the drawings illustrated in FIGS. 13 to 16, but the bidirectional conductive pins 160 and 160a may be applied in various forms. For example, even if the existing pogo-pin is applied, the high-speed operation may be performed by the ground function.
  • the inner conductive wall 120 is formed inside the main through hole 171. That is, the internal conductive wall 120 is formed in at least one of the main through holes 171 into which the bidirectional conductive pins 160 are inserted.
  • the conductive layers 113 and 114 may be formed. Of course, they can be electrically connected.
  • 112,112a insulating layer 113,113a, 114,114a: conductive layer
  • 140,140a upper support layer 141,141a: upper film layer
  • the present invention can be applied to semiconductor test sockets used for inspection of electronic devices such as semiconductor devices and displays. It can be applied to the parts to be connected.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • Connecting Device With Holders (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

La présente invention porte sur un module à motifs conducteurs bidirectionnels, le module à motifs conducteurs bidirectionnels comprenant : un corps principal dans lequel une pluralité de substrats de base ayant une couche isolante constituée d'un matériau isolant et une couche conductrice formée sur une surface ou sur les deux surfaces de la couche isolante sont formés de manière stratifiée dans une direction verticale ; une pluralité de trous traversants principaux qui sont formés à travers le corps principal dans la direction verticale ; une paroi isolante intérieure qui est constituée d'un matériau isolant appliqué au côté de surface de paroi intérieure de chacun des trous traversants principaux ; une paroi conductrice intérieure qui est formée entre la surface de paroi intérieure et la paroi isolante intérieure correspondante dans au moins un trou de la pluralité de trous traversants principaux pour connecter électriquement mutuellement les couches conductrices de la pluralité de substrats de base ; une couche supérieure de support constituée d'un matériau isolant élastique est fixée à une surface supérieure du corps principal, et a une pluralité de trous traversants supérieurs correspondant à la pluralité de trous traversants principaux, respectivement ; une couche inférieure de support constituée d'un matériau isolant élastique est fixée à une surface inférieure du corps principal, et a une pluralité de trous traversants inférieurs correspondant à la pluralité de trous traversants principaux, respectivement ; une pluralité de broches conductrices bidirectionnelles qui sont longées dans la pluralité de trous traversants principaux, respectivement, et qui sont chacune supportées par la couche supérieure de support et la couche inférieure de support, respectivement, dans un état où leur surface supérieure est découverte à travers le trou traversant supérieur dans la direction supérieure et leur surface inférieure est découverte à travers le trou traversant inférieur dans la direction inférieure. Par conséquent, un essai à grande vitesse est possible tandis qu'une prise d'essai semi-conductrice de type à broche Pogo peut être remplacée et un module à motifs conducteurs bidirectionnels peut également être appliqué à un interposeur qui connecte électriquement une UCT à grande vitesse et un substrat entre l'UCT et le substrat.
PCT/KR2017/000594 2017-01-17 2017-01-18 Module à motifs conducteurs bidirectionnels WO2018135674A1 (fr)

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KR10-2017-0007884 2017-01-17
KR1020170007884A KR101919881B1 (ko) 2017-01-17 2017-01-17 양방향 도전성 패턴 모듈

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KR102191701B1 (ko) * 2019-08-22 2020-12-17 주식회사 이노글로벌 부분 교체가 가능한 테스트 소켓
WO2021045286A1 (fr) * 2019-09-06 2021-03-11 주식회사 이노글로벌 Prise de vérification ayant un espace vide
KR102080832B1 (ko) * 2019-10-02 2020-02-24 황동원 스프링 콘택트 및 스프링 콘택트 내장형 테스트 소켓

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KR101919881B1 (ko) 2019-02-11

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