WO2012008569A1 - Dissipateur thermique et dispositif électronique - Google Patents

Dissipateur thermique et dispositif électronique Download PDF

Info

Publication number
WO2012008569A1
WO2012008569A1 PCT/JP2011/066202 JP2011066202W WO2012008569A1 WO 2012008569 A1 WO2012008569 A1 WO 2012008569A1 JP 2011066202 W JP2011066202 W JP 2011066202W WO 2012008569 A1 WO2012008569 A1 WO 2012008569A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
protective film
ceramic
heat sink
ceramic protective
Prior art date
Application number
PCT/JP2011/066202
Other languages
English (en)
Japanese (ja)
Inventor
彰規 伊藤
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Publication of WO2012008569A1 publication Critical patent/WO2012008569A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/42—Cooling means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/04—Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramic; of concrete; of natural stone
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
    • F28F21/081—Heat exchange elements made from metals or metal alloys
    • F28F21/084—Heat exchange elements made from metals or metal alloys from aluminium or aluminium alloys
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a heat sink and an electronic device.
  • This application claims priority based on Japanese Patent Application No. 2010-160779 filed in Japan on July 15, 2010, the contents of which are incorporated herein by reference.
  • a heat sink described in Patent Document 1 is known as a heat sink that mounts electronic components and can dissipate heat generated by the electronic components.
  • an insulating layer is formed around a base made of aluminum or an aluminum alloy.
  • the insulating layer is formed of a porous ceramic protective film in which independent pores are scattered.
  • the state in which the independent pores are scattered is a state in which a plurality of holes having no opening and whose maximum length (maximum distance between the inner walls of the hole) is 0.5 ⁇ m or more are observed.
  • Such a ceramic protective film can absorb the stress caused by the difference in thermal expansion coefficient between the substrate and the ceramic protective film, and even if the temperature is high, the ceramic protective film does not easily crack.
  • the ceramic protective film of Patent Document 1 has a porous structure in which independent pores are scattered. Therefore, heat conductivity is bad and heat dissipation is low.
  • the ceramic protective film is generated by the reaction between oxygen plasma and metal ions of the substrate. Independent pores are generated by the gas generated by the reaction between oxygen plasma and metal ions, but it is difficult to precisely control the conditions for generating the independent pores.
  • the thickness of the ceramic protective film is 5 ⁇ m or more. This is considered to be because it is difficult to obtain a stable insulating property by reducing the film thickness unevenness of the ceramic protective film.
  • the thinner the ceramic protective film the better. Therefore, the heat dissipation plate of Patent Document 1 cannot provide sufficient heat dissipation.
  • This invention is made
  • a heat dissipation plate is a ceramic film formed by anodizing a base made of aluminum or an aluminum alloy and the surface of the base, and has no voids inside.
  • a ceramic protective film having a thickness of 0.01 ⁇ m or more and less than 5 ⁇ m, and a metal film formed on the surface of the ceramic protective film.
  • the heat sink by 1 aspect of this invention may further be equipped with the metal film formed in the part in which the said ceramic protective film of the said base
  • the heat sink by 1 aspect of this invention WHEREIN:
  • the said metal film may have the unevenness
  • the metal film may be a porous film.
  • the heat sink by 1 aspect of this invention WHEREIN:
  • coat may consist of copper or aluminum.
  • the heat sink by 1 aspect of this invention WHEREIN: The thickness of 0.5 to 3 micrometer may be sufficient as the said ceramic protective film.
  • An electronic device is a ceramic film that is formed by anodizing a substrate made of aluminum or an aluminum alloy and the surface of the substrate, and has no voids inside.
  • a heat sink having a ceramic protective film having a thickness of 0.01 ⁇ m or more and less than 5 ⁇ m and a metal film formed on the surface of the ceramic protective film is provided.
  • an electronic device may be formed on the surface of the ceramic protective film.
  • the electronic device by the other aspect of this invention may be further equipped with the board
  • the electronic device by the other aspect of this invention may further be equipped with the solar cell panel closely_contact
  • the present invention it is possible to provide a heat radiating plate that is excellent in heat dissipation and hardly cracks in the ceramic protective film even at high temperatures, and an electronic device using the heat radiating plate.
  • FIG. 2 is a cross-sectional SEM image of a ceramic protective film formed by the method of Example 1.
  • FIG. 2 is a surface SEM image of a metal film formed by the method of Example 1.
  • FIG. 1 is a schematic cross-sectional view of a heat sink 4 which is a first form of a heat sink.
  • the heat sink 4 includes the base 1 as a core.
  • the substrate 1 is not particularly limited as long as it has thermal conductivity, and a glass plate or a metal plate formed on the surface of a film, or a metal plate made of aluminum or an aluminum alloy can be used.
  • a metal plate made of aluminum or an aluminum alloy is suitable as a material for the substrate 1 because it has high thermal conductivity, can be obtained at a low cost, and can easily form the ceramic protective film 2 on the surface by anodization.
  • a ceramic protective film 2 is formed on the surface of the substrate 1.
  • the ceramic protective film 2 covers the entire outer surface of the substrate 1.
  • the ceramic protective film 2 functions as a protective film for enhancing the corrosion resistance, wear resistance, electrical insulation and the like of the heat sink 4.
  • the ceramic protective film 2 is a ceramic film having no pores inside.
  • the term “having no pores” means that the ceramic protective film 2 does not have a porous structure.
  • the porous structure is a structure in which independent pores are scattered in the ceramic protective film as in Patent Document 1, and a large number of pores extending in the film thickness direction of the ceramic protective film are regularly arranged in the film surface direction of the ceramic protective film. Including a hole array structure arranged in a row.
  • a porous oxide film having a large number of pores formed on the surface may be formed.
  • This oxide film is composed of an aggregate of cylindrical alumina called cells, and a hole extending in the thickness direction of the oxide film is formed at the center of each cell.
  • the mechanism by which the hole array structure is formed is as follows.
  • anodization is performed using an acid such as sulfuric acid, oxalic acid, or phosphoric acid as the electrolyte
  • an oxide film with a certain thickness is formed on the surface of the substrate, and then the electric field strength in the film thickness direction increases and the oxide film Dissolution is accelerated.
  • the growth of the oxide film on the substrate side proceeds as much as the thickness decreases due to dissolution.
  • the dissolution of the oxide film and the growth of the oxide layer proceed preferentially.
  • a hole array structure is formed in the oxide film by the local dissolution and generation of the oxide film.
  • Vacancies are formed because the oxide film is dissolved by the acidic electrolyte. Therefore, in order not to form vacancies, a weakly acidic electrolytic solution may be used as the electrolytic solution, or a metal plate made of aluminum or an aluminum alloy may be positively polarized and anodized using a neutral electrolytic solution. good.
  • the ceramic protective film 2 can be made into the fine ceramic membrane
  • the thickness of the ceramic protective film 2 is preferably 0.01 ⁇ m or more and less than 5 ⁇ m, and more preferably 0.5 ⁇ m or more and 3 ⁇ m or less. If the thickness of the ceramic protective film 2 is less than 0.01 ⁇ m, sufficient corrosion resistance, wear resistance, electrical insulation and the like cannot be obtained. When the thickness of the ceramic protective film 2 is 5 ⁇ m or more, cracks are likely to occur in the ceramic protective film 2 when the heat sink 4 becomes high temperature. On the other hand, if the thickness of the ceramic protective film 2 is large, the heat capacity of the ceramic protective film 2 becomes large, and the heat dissipation becomes insufficient.
  • the ceramic protective film 2 When the thickness of the ceramic protective film 2 is 0.01 ⁇ m or more and less than 5 ⁇ m, the ceramic protective film 2 has good corrosion resistance, wear resistance, electrical insulation, and heat dissipation, and cracks when the heat sink 4 becomes hot. Is also suppressed. Such an effect is further enhanced when the thickness of the ceramic protective film 2 is 0.5 ⁇ m or more and 3 ⁇ m or less.
  • a metal film 3 is formed on the surface of the ceramic protective film 2.
  • the metal film 3 is formed only on one main surface side of the substrate 1.
  • the metal film 3 is provided in order to improve the heat dissipation and wear resistance of the heat sink 4.
  • the metal film 3 is not particularly limited as long as it has a high thermal conductivity.
  • Aluminum and copper are suitable as the metal film 3 formed on the surface of the ceramic protective film 2 because of their high thermal conductivity and high heat dissipation.
  • the thickness of the metal film 3 is preferably 0.03 ⁇ m or more and 10 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 5 ⁇ m or less. If the thickness of the metal film 3 is less than 0.03 ⁇ m, sufficient wear resistance cannot be obtained. When the thickness of the metal film 3 is larger than 10 ⁇ m, the heat capacity of the metal film 3 is increased and the heat dissipation is impaired. When the thickness of the metal film 3 is 0.03 ⁇ m or more and 10 ⁇ m or less, the heat dissipation and wear resistance of the metal film 3 are improved, and when the thickness of the metal film 3 is 0.1 ⁇ m or more and 5 ⁇ m or less, More effective.
  • irregularities 3 a are formed on the surface of the metal film 3.
  • the surface area of the metal film 3 becomes large and heat dissipation increases.
  • a method of forming the unevenness 3 a on the surface of the metal film 3 there are a sand blast method in which an abrasive is sprayed on the surface of the metal film 3, an etching method in which the surface of the metal film 3 is etched, and the like.
  • the metal film 3 is formed by sputtering, if the temperature of the substrate 1 is increased, fine irregularities called hillocks may be formed on the surface of the metal film 3. This hillock may be used as the unevenness 3 a of the metal film 3. In this case, the metal film 3 and the unevenness 3a can be formed simultaneously.
  • the ceramic protective film 2 is not porous but a dense ceramic film. For this reason, the ceramic protective film 2 has better thermal conductivity than the porous ceramic protective film and has excellent heat dissipation. Even if the dense ceramic protective film 2 has a small film thickness, the film thickness unevenness is small and has a stable insulating property. Therefore, the film thickness of the ceramic protective film 2 can be a thin film having a thickness of 0.01 ⁇ m or more and less than 5 ⁇ m, thereby providing the heat radiating plate 4 excellent in heat dissipation. In addition, since the ceramic protective film 2 is formed thin, cracks are unlikely to occur in the ceramic protective film 2 even when the heat sink 4 becomes high temperature.
  • the highly reliable heat sink 4 is provided.
  • the ceramic protective film 2 is not porous, the surface of the ceramic protective film 2 is less uneven. Therefore, the heat radiation plate 4 having high adhesion between the ceramic protective film 2 and the metal film 3 and excellent reliability is obtained.
  • a base 1 serving as a core is prepared.
  • the substrate 1 for example, a metal plate made of aluminum or an aluminum alloy is used.
  • a ceramic protective film 2 is formed on the surface of the substrate 1 by anodizing the surface of the substrate 1.
  • the surface of the base body 1 is oxidized and a ceramic protective film 2 made of an oxide film of the base body 1 is formed.
  • the electrolytic solution a weakly acidic or neutral electrolytic solution is used. Thereby, a dense ceramic protective film 2 having no pores is formed.
  • the thickness of the formed ceramic protective film 2 is proportional to the magnitude of the energized voltage and the energization time. Therefore, these are adjusted so that the thickness of the ceramic protective film 2 is 0.01 ⁇ m or more and less than 5 ⁇ m, more preferably 0.5 ⁇ m or more and 3 ⁇ m or less.
  • a metal film 3 is formed on the surface of the ceramic protective film 2.
  • the metal film 3 is formed, for example, by heating the substrate 1 to about 250 ° C. and sputtering aluminum on the surface of the ceramic protective film 2.
  • Hillock becomes a problem when the metal film 3 is used as wiring.
  • the heat sink 4 uses the metal coating 3 as a heat dissipation layer, hillocks are positively formed on the surface of the metal coating 3.
  • the metal film 3 becomes a porous film having irregularities 3a formed on the surface, and the surface area of the metal film 3 is enlarged.
  • the heat accumulated in the ceramic protective film 2 is quickly released to the outside through the surface of the metal film 3, and the heat dissipation performance of the heat radiating plate 4 is enhanced.
  • Example 1 Hereinafter, Example 1, Comparative Example 1, and Comparative Example 2 will be described.
  • a heat radiating plate in which a ceramic protective film is formed of a dense ceramic film is referred to as Example 1.
  • a heat radiating plate in which the ceramic protective film is formed of a ceramic film in which independent pores are scattered is referred to as Comparative Example 1.
  • a heat radiating plate in which a ceramic protective film is formed of a ceramic film having a hole array structure is referred to as Comparative Example 2.
  • the characteristics of Example 1, Comparative Example 1, and Comparative Example 2 are compared. Specific configurations of Example 1, Comparative Example 1, and Comparative Example 2 are as follows.
  • Example 1 Ceramics with a film thickness of 0.8 ⁇ m by anodizing method using a near neutral electrolyte such as an organic acid solution on the entire outer surface of an aluminum plate (JIS name: A1050) having a thickness of 1.0 mm and a size of 100 m ⁇ 100 mm
  • a substrate on which a film (ceramic protective film) was formed was prepared.
  • a sample having a size of 30 mm ⁇ 30 mm was cut out from the substrate.
  • a 3 ⁇ m-thick aluminum metal film was formed on the entire surface of one main surface of the sample by sputtering, and the heat dissipation plate of Example 1 was obtained. Sputtering was performed at a substrate temperature of 250 ° C. so that hillocks were generated on the surface of the metal film.
  • FIG. 3 is a cross-sectional SEM (Scanning Electron Microscopy) image of the ceramic protective film formed by the method of Example 1.
  • FIG. 4 is a surface SEM image of the metal film formed by the method of Example 1.
  • the ceramic protective film 2 is a dense film, and the surface of the ceramic protective film 2 is generally smooth.
  • the ceramic protective film 2 is a thin film having a thickness of 0.8 ⁇ m, but the film thickness unevenness hardly occurs.
  • Comparative Example 1 A substrate in which a ceramic film (ceramic protective film) having a thickness of 0.8 ⁇ m is formed on the entire outer surface of an aluminum plate (JIS name: A1050) having a thickness of 1.0 mm and a size of 100 m ⁇ 100 mm by a plasma chemical anodizing method. Got ready. This substrate was obtained from Ueda Alumite Industry Co., Ltd. as an aluminum product treated with Kepler coating. The ceramic film formed by the plasma chemical anodizing method has a porous structure in which independent pores are scattered. A sample having a size of 30 mm ⁇ 30 mm was cut out from the substrate.
  • a 3 ⁇ m-thick aluminum metal film was formed on the entire surface of one main surface of the sample by sputtering to obtain a heat radiating plate of Comparative Example 1. Sputtering was performed at a lower substrate temperature than in Example 1 so that hillocks were not generated on the surface of the metal film.
  • Comparative Example 2 By an ordinary anodic oxidation method (anodic oxidation method not plasma scientific anodization method) using an acidic electrolyte solution on the entire outer surface of an aluminum plate (JIS name: A1050) having a thickness of 1.0 mm and a size of 100 m ⁇ 100 mm A substrate on which a ceramic film (ceramic protective film) having a thickness of 0.8 ⁇ m was formed was prepared. This substrate was obtained from Ueda Anodized Industry Co., Ltd. as an anodized substrate.
  • a ceramic film formed by a normal anodic oxidation method has a hole array structure in which a large number of holes extending in the film thickness direction are regularly arranged in the film surface direction.
  • a sample having a size of 30 mm ⁇ 30 mm was cut out from the substrate.
  • a 3 ⁇ m thick aluminum metal film was formed on the entire surface of one of the main surfaces of the sample by sputtering to obtain a heat radiating plate of Comparative Example 2.
  • Sputtering was performed at a lower substrate temperature than in Example 1 so that hillocks were not generated on the surface of the metal film.
  • Table 1 shows the results of comparing the characteristics of Example 1, Comparative Example 1, and Comparative Example 2.
  • Presence / absence of pores in the ceramic coating is an evaluation of whether or not pores are formed inside the ceramic coating by observing a cross-sectional SEM image of the sample before forming the metal coating.
  • a case where holes are formed inside the ceramic film is referred to as “having holes”, and a case where holes are not formed is referred to as “no holes”.
  • Presence / absence of vacancies on the surface of the metal film is an evaluation of whether or not vacancies formed by hillocks exist on the surface of the metal film by observing the surface SEM image of the metal film.
  • the case where holes are formed on the surface of the metal film is referred to as “having holes”, and the case where holes are not formed on the surface of the metal film is referred to as “no holes”.
  • the presence or absence of cracks in the ceramic film is an evaluation of whether or not cracks have occurred on the surface of the ceramic film by observing the surface of the ceramic film with a microscope. Observation with a microscope is performed twice before the heat cycle treatment on the heat sink and after the heat cycle treatment. A case where a crack has occurred is referred to as “with crack”, and a case where no crack has occurred is referred to as “without crack”.
  • the heat cycle process is a process in which a sample before forming a metal film is immersed in a liquid at ⁇ 55 ° C. for 15 minutes and in a liquid at 125 ° C. for 15 minutes and subjected to 50 cycles.
  • coat was observed by 1000 time magnification, and it was investigated whether the ceramic membrane
  • the thicknesses of the ceramic films (ceramic protective films) of Example 1, Comparative Example 1, and Comparative Example 2 are all 0.8 ⁇ m.
  • the ceramic film of Example 1 is a dense film without voids.
  • the ceramic film of Comparative Example 1 is a porous film in which independent pores are scattered.
  • the ceramic film of Comparative Example 2 is a porous film in which a hole array structure is formed.
  • the thickness of the ceramic film is thin, the heat capacity of the ceramic film is reduced and the heat dissipation is increased.
  • the electrical insulation between the metal film and the aluminum plate (substrate) is increased. It becomes insufficient and short circuit is likely to occur.
  • the heat radiating plate of Example 1 since the ceramic film is formed as a dense film having no pores therein, even if the thickness of the ceramic film is reduced, the electrical insulation is high and short-circuiting is unlikely to occur.
  • the metal film of Example 1 is a porous film having pores formed on the surface.
  • the metal films of Comparative Example 1 and Comparative Example 2 are smooth films having no pores on the surface. Therefore, the surface area of the metal film of Example 1 is larger than the surface area of the metal film of Comparative Example 1 or Comparative Example 2. Therefore, the heat dissipation of the metal film of Example 1 is higher than the heat dissipation of the metal films of Comparative Example 1 and Comparative Example 2. Since the ceramic film of Example 1 is a denser film than the ceramic film of Comparative Example 1 or Comparative Example 2, it has high thermal conductivity and excellent heat dissipation. Therefore, the heat dissipation of the entire heat sink combining the heat dissipation of the ceramic film and the heat dissipation of the metal film is superior to that of Comparative Example 1 and Comparative Example 2 in the heat sink of Example 1.
  • Example 1 Comparative Example 1, and Comparative Example 2
  • no cracks are generated on the surface of the ceramic film before the heat cycle treatment.
  • cracks do not occur on the surfaces of the ceramic coatings of Example 1 and Comparative Example 1, but cracks occur on the surface of the ceramic coating of Comparative Example 2.
  • the following can be considered as the cause of no cracks occurring in the ceramic coatings of Example 1 and Comparative Example 2 even after the heat cycle treatment.
  • the ceramic film of Example 1 is a thin film having a thickness of 0.8 ⁇ m, it has high flexibility. Therefore, it is considered that the thermal stress during the heat cycle treatment was absorbed by the ceramic film, and the generation of cracks was suppressed.
  • Comparative Example 1 since the independent pores are scattered inside the ceramic film, the flexibility is further increased, and it is considered that the occurrence of cracks is further suppressed.
  • the ceramic film of Comparative Example 2 is also a thin film, but the ceramic film of Comparative Example 2 has a hole array structure in which a large number of holes penetrate in the thickness direction. Such a ceramic film is vulnerable to thermal stress in the film surface direction. Therefore, it is considered that cracks occurred after the heat cycle treatment.
  • Example 1 is the most excellent as a comprehensive evaluation.
  • FIG. 5 is a schematic cross-sectional view of an LED lighting device 11 which is an example of an electronic apparatus including the heat radiation plate 4 of the first form shown in FIG.
  • the heat sink 4 has a base 1, a ceramic protective film 2, and a metal film 3. Since the structure of the heat sink 4 is as described above, a detailed description thereof is omitted.
  • the LED lighting device 11 includes a substrate 8, a heat sink 4, and a cover member 10.
  • a plurality of LEDs (Light Emitting Diodes) 7 are mounted on the substrate 8.
  • the heat sink 4 is provided on the opposite side of the LED 7 with the substrate 8 interposed therebetween.
  • the cover member 10 is a transparent cover member that covers the periphery of the LED 7 and the substrate 8.
  • the substrate 8 is installed on the surface opposite to the surface on which the metal film 3 of the heat sink 4 is formed.
  • the substrate 8 is not particularly limited as long as it has thermal conductivity, and a plate made of glass, aluminum, copper, stainless steel, a resin film, or the like is used.
  • the substrate 8 is in close contact with the heat radiating plate 4 by the adhesive 9, but the substrate 8 and the heat radiating plate 4 may be in close contact without using an adhesive.
  • a transparent cover member 10 that covers the top of the substrate 8 and the LEDs 7 is provided around the substrate 8.
  • the cover member 10 only needs to transmit the light emitted from the LED, and a transparent member such as glass or resin is used.
  • the cover member 10 is fixed on the ceramic protective film 2 by forming a sealed space 12 for sealing the substrate 8 and the LED 7 with the base body 1.
  • the heat H1 generated in the LED 7 is transmitted to the substrate 8, and is released to the outside as heat H2 through the adhesive 9, the ceramic protective film 2, the substrate 1, the ceramic protective film 2, and the metal film 3. Therefore, the temperature rise in the sealed space 12 is suppressed, and the temperature of the LED is also reduced. Thereby, the stable drive of LED7 is attained.
  • the ceramic protective film 2 is formed on the entire outer surface of the base 1, but the ceramic protective film 2 is not necessarily formed on the main surface of the base 1 opposite to the side facing the base 8. It does not have to be.
  • the ceramic protective film 2 is formed on the surface of the base 1 other than the main surface opposite to the side facing the base 8, and the metal film 3 is formed on the surface of the base 1 where the ceramic protective film 2 is not formed. May be. Thereby, the heat dissipation of the heat sink 4 can be improved.
  • FIG. 6 is a schematic cross-sectional view of an electronic component substrate 15 which is an example of an electronic device including the heat dissipation plate 13 which is the second form of the heat dissipation plate.
  • symbol is attached
  • the electronic component substrate 15 has a plurality of wirings 14 formed on the heat sink 13.
  • the heat radiating plate 13 includes the base 1 as a core, and a ceramic protective film 2 is formed on the surface of the base 1.
  • the ceramic protective film 2 covers the entire outer surface of the substrate 1.
  • the wiring 14 is formed on the surface of the ceramic protective film 2.
  • the material of the substrate 1 and the material and thickness of the ceramic protective film 2 are the same as those of the heat sink 4 of the first embodiment.
  • a wiring 14 is formed on the surface of the ceramic protective film 2.
  • the wiring 14 is formed only on one main surface side of the base 1.
  • the wiring 14 can be formed, for example, by selectively etching the metal film 3 of the heat radiation plate 4 of the first form shown in FIG. Since the unevenness 3a is formed on the surface of the metal film 3 in FIG. 1, the unevenness 14a is formed on the surface of the wiring 14, but the surface of the wiring 14 may be smooth.
  • the electronic component substrate 15 may be the one in which no electronic component is mounted on the wiring 14, and the electronic component substrate 15 may be one in which the electronic component is mounted on the wiring 14. Heat generated in the electronic component on the wiring 14 is released to the outside through the wiring 14, the ceramic protective film 2, the base 1, and the ceramic protective film 2. Therefore, the temperature rise of the electronic component is suppressed, and the electronic component can be driven stably.
  • FIG. 7 is a schematic cross-sectional view of a solar cell unit 20 which is an example of an electronic apparatus including the heat radiation plate 4 of the first form shown in FIG.
  • the heat sink 4 has a base 1, a ceramic protective film 2, and a metal film 3. Since the structure of the heat sink 4 is as described above, a detailed description thereof is omitted.
  • the solar cell unit 20 includes a solar cell panel 16, a heat sink 4, a protective film 17, and a back plate 18.
  • the heat sink 4 is provided on the side opposite to the light incident surface 16 a side of the solar cell panel 16.
  • the protective film 17 is a transparent protective film that covers the light incident surface 16 a of the solar cell panel 16.
  • the back plate 18 is provided on the side opposite to the solar cell panel 16 with the heat sink 4 interposed therebetween.
  • the solar cell panel 16 is an element that converts light incident from the light incident surface 16a into electric power by the photovoltaic effect.
  • Examples of the solar cell panel 16 include a silicon-based solar cell panel that uses silicon for a photoelectric conversion unit, a compound-based solar cell that uses a compound semiconductor for a photoelectric conversion unit, and an organic-based solar cell panel that uses an organic compound for a photoelectric conversion unit. Used.
  • a known solar cell panel is used as the solar cell panel 16, and the type and configuration thereof are not particularly limited.
  • the solar cell panel 16 is installed on the surface opposite to the surface on which the metal film 3 of the heat sink 4 is formed.
  • the heat sink 4 is in close contact with the surface opposite to the light incident surface 16a side of the solar cell panel 16 directly or via an adhesive (not shown).
  • the solar cell panel 16, the heat radiating plate 4, and the protective film 17 are integrated and fixed to the back plate 18.
  • the maximum photoelectric conversion efficiency of the solar cell panel 16 is about 15%, and the remaining solar energy is about 80% waste heat. If the heat is not excluded, the temperature of the solar cell panel 16 rises to the optimum temperature (25 ° C.) or more, and the photoelectric conversion efficiency of the solar cell panel 16 is lowered. When the solar cell panel 16 is used in a high temperature environment for a long period of time, the deterioration is quick and the life is shortened. Except for the winter, the temperature of the solar cell panel 16 reaches 70 ° C. to 90 ° C., and the photoelectric conversion efficiency decreases to about 7% to 10%.
  • the solar cell unit 20 is provided with a heat sink 4 on the surface of the solar cell panel 16 opposite to the light incident surface 16a.
  • the heat accumulated in the solar cell panel 16 is released to the outside through the heat sink 4. Therefore, the temperature of the photoelectric conversion part of the solar cell panel 16 is maintained near the optimum temperature (for example, 45 ° C. or lower). Therefore, the solar cell unit 20 with high photoelectric conversion efficiency of the solar cell panel 16 is obtained.
  • FIG. 8 is a schematic perspective view of a solar cell module 21 in which a plurality of solar cell units 20 are arranged in an array and fixed to the back plate 4.
  • FIG. 9 is a schematic perspective view of a large-sized solar cell module 23 in which a plurality of the solar cell modules 22 of FIG.
  • the solar cell modules 21 and 23 are obtained by connecting a plurality of solar cell units 20 in series or in parallel to obtain necessary power. Since the solar cell modules 21 and 23 include the solar cell unit 20 with high photoelectric conversion efficiency, large electric power can be stably supplied.
  • [Deformation] 1 and 6 show different types of heat sinks. These heat radiating plates can be appropriately changed according to the use and required performance of electronic components mounted on the heat radiating plates.
  • the heat dissipation plate of FIG. 1 can be applied to the electronic component substrate 15 of FIG.
  • the heat sink shown in FIG. 6 can be applied to the electronic apparatus shown in FIGS.
  • FIG. 5, FIG. 6, and FIG. 7 show an LED illumination device, an electronic component substrate, and a solar cell unit as examples of electronic devices.
  • the electronic device is not limited to such a device, and the present invention can be applied to general devices including a heat sink.
  • the present invention can be widely used in the field of heat sinks and the field of electronic devices using heat sinks.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un dissipateur thermique dont le matériau de base comprend de l'aluminium ou un alliage d'aluminium. Ledit dissipateur thermique peut être fabriqué par anodisation de la surface du matériau de base, et est pourvu d'un film protecteur en céramique qui ne contient aucun vide et dont l'épaisseur est supérieure ou égale à 0,01 µm et inférieure à 5 µm. Le dissipateur thermique comporte également un revêtement métallique sur la surface du film protecteur en céramique.
PCT/JP2011/066202 2010-07-15 2011-07-15 Dissipateur thermique et dispositif électronique WO2012008569A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010160779 2010-07-15
JP2010-160779 2010-07-15

Publications (1)

Publication Number Publication Date
WO2012008569A1 true WO2012008569A1 (fr) 2012-01-19

Family

ID=45469563

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/066202 WO2012008569A1 (fr) 2010-07-15 2011-07-15 Dissipateur thermique et dispositif électronique

Country Status (1)

Country Link
WO (1) WO2012008569A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015033700A1 (fr) * 2013-09-05 2015-03-12 シャープ株式会社 Substrat pour un dispositif électroluminescent, dispositif électroluminescent et procédé permettant de fabriquer un substrat pour un dispositif électroluminescent
WO2015079913A1 (fr) * 2013-11-29 2015-06-04 シャープ株式会社 Substrat de dispositif électroluminescent, dispositif électroluminescent et procédé de production de substrat de dispositif électroluminescent
EP3200571B1 (fr) * 2014-09-24 2021-04-21 Kyocera Corporation Carte de montage de composant électronique et dispositif d'émission de lumière utilisant celle-ci
WO2021146722A1 (fr) * 2020-01-19 2021-07-22 Ixi Technology Holdings, Inc. Dissipateur thermique pour équipement portatif

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08293513A (ja) * 1995-04-25 1996-11-05 Matsushita Electron Corp 半導体装置およびその製造方法
JP2000124568A (ja) * 1998-10-19 2000-04-28 Sumitomo Metal Ind Ltd 金属ベース基板および半導体装置とその製造方法
JP2004200519A (ja) * 2002-12-19 2004-07-15 Kyocera Corp 太陽電池モジュール
JP2007251176A (ja) * 2006-03-17 2007-09-27 Samsung Electro-Mechanics Co Ltd 陽極酸化金属基板モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08293513A (ja) * 1995-04-25 1996-11-05 Matsushita Electron Corp 半導体装置およびその製造方法
JP2000124568A (ja) * 1998-10-19 2000-04-28 Sumitomo Metal Ind Ltd 金属ベース基板および半導体装置とその製造方法
JP2004200519A (ja) * 2002-12-19 2004-07-15 Kyocera Corp 太陽電池モジュール
JP2007251176A (ja) * 2006-03-17 2007-09-27 Samsung Electro-Mechanics Co Ltd 陽極酸化金属基板モジュール

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015033700A1 (fr) * 2013-09-05 2015-03-12 シャープ株式会社 Substrat pour un dispositif électroluminescent, dispositif électroluminescent et procédé permettant de fabriquer un substrat pour un dispositif électroluminescent
CN105518883A (zh) * 2013-09-05 2016-04-20 夏普株式会社 发光装置用基板、发光装置、以及发光装置用基板的制造方法
JP6030244B2 (ja) * 2013-09-05 2016-11-24 シャープ株式会社 発光装置用基板、発光装置、および発光装置用基板の製造方法
WO2015079913A1 (fr) * 2013-11-29 2015-06-04 シャープ株式会社 Substrat de dispositif électroluminescent, dispositif électroluminescent et procédé de production de substrat de dispositif électroluminescent
JP6054546B2 (ja) * 2013-11-29 2016-12-27 シャープ株式会社 発光装置用基板、発光装置および発光装置用基板の製造方法
EP3200571B1 (fr) * 2014-09-24 2021-04-21 Kyocera Corporation Carte de montage de composant électronique et dispositif d'émission de lumière utilisant celle-ci
WO2021146722A1 (fr) * 2020-01-19 2021-07-22 Ixi Technology Holdings, Inc. Dissipateur thermique pour équipement portatif
US11147189B2 (en) 2020-01-19 2021-10-12 Ixi Technology Holdings, Inc. Heat sink for hand held equipment

Similar Documents

Publication Publication Date Title
US8955580B2 (en) Use of a graphite heat-dissipation device including a plating metal layer
JP5539238B2 (ja) 放熱基板
JP4980455B2 (ja) 絶縁層付金属基板の製造方法、半導体装置の製造方法、太陽電池の製造方法、電子回路の製造方法、および発光素子の製造方法
US20130209776A1 (en) Back sheet of a solar cell module for photovoltaic power generation
EP1991720A1 (fr) Aluminium anodisé, diélectrique, et procédé
EP2217043B1 (fr) Procédé de fabrication d'un substrat pour un module de puissance
WO2012008569A1 (fr) Dissipateur thermique et dispositif électronique
KR20170044105A (ko) 접합체, 히트 싱크가 부착된 파워 모듈용 기판, 히트 싱크, 접합체의 제조 방법, 히트 싱크가 부착된 파워 모듈용 기판의 제조 방법, 및 히트 싱크의 제조 방법
US20100112372A1 (en) Component having a ceramic base the surface of which is metalized
KR101751108B1 (ko) 은 페이스트를 이용한 led 조명기구의 방열장치
WO2010114238A2 (fr) Un circuit imprimé et son procédé de fabrication
KR20130036650A (ko) Ｌｅｄ용 금속 기판 모듈과 그 제조 방법, 그리고 금속 기판 모듈을 이용한 차량용 ｌｅｄ 패키지
WO2015135249A1 (fr) Substrat de circuit à matériau à isolation multiple à motifs
US20120211268A1 (en) Light and heat resistant circuit board apparatus and method
KR20100107371A (ko) 도금된 금속 레이어를 포함하는 열 방출 장치
Lee et al. Heat dissipation performance of metal-core printed circuit board prepared by anodic oxidation and electroless deposition
JPWO2018216433A1 (ja) 被処理部材の製造方法および積層体
CN108140705B (zh) 发光模块用基板、发光模块、带制冷器的发光模块用基板及发光模块用基板的制造方法
CN103035831A (zh) Led铝基板绝缘层的制造方法
KR101118846B1 (ko) 방열 기판 및 이의 제조 방법
KR20160134026A (ko) 메탄올을 이용한 led 조명기구의 방열장치
KR101125752B1 (ko) 인쇄 회로 기판 및 그 제조 방법
JP2011176299A (ja) 回路基板およびこれを用いた電子装置
US20110232950A1 (en) Substrate and method for manufacturing the same
KR101154373B1 (ko) 메탈코어 회로기판 및 그 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11806899

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11806899

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP