WO2011117945A1 - スパッタリング装置及び電子デバイスの製造方法 - Google Patents

スパッタリング装置及び電子デバイスの製造方法 Download PDF

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Publication number
WO2011117945A1
WO2011117945A1 PCT/JP2010/007140 JP2010007140W WO2011117945A1 WO 2011117945 A1 WO2011117945 A1 WO 2011117945A1 JP 2010007140 W JP2010007140 W JP 2010007140W WO 2011117945 A1 WO2011117945 A1 WO 2011117945A1
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WO
WIPO (PCT)
Prior art keywords
shutter
target
substrate
exhaust
chamber
Prior art date
Application number
PCT/JP2010/007140
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English (en)
French (fr)
Japanese (ja)
Inventor
山口述夫
真下公子
長澤慎也
Original Assignee
キヤノンアネルバ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by キヤノンアネルバ株式会社 filed Critical キヤノンアネルバ株式会社
Priority to JP2012506676A priority Critical patent/JP5443590B2/ja
Priority to KR1020137034987A priority patent/KR101409617B1/ko
Priority to KR1020127027848A priority patent/KR101387178B1/ko
Priority to CN2010800657808A priority patent/CN102822378A/zh
Publication of WO2011117945A1 publication Critical patent/WO2011117945A1/ja
Priority to US13/606,346 priority patent/US9322092B2/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Definitions

  • the present invention relates to a sputtering apparatus used for depositing materials in a manufacturing process of an electronic apparatus such as a magnetic storage medium, a semiconductor device, and a display device, and an electronic device manufacturing method using the sputtering apparatus.
  • the gate insulating film is required to have a very thin film thickness.
  • a thin electrode film or the like formed on a very thin insulating film is required to be formed stably.
  • impurities such as carbon in the film or at the interface between the thin films affect the device performance, it is required to reduce the impurity level.
  • the sputtering method used as one of the film forming methods does not contain impurities such as carbon as a raw material as compared with the CVD method, so that high quality film formation can be performed. Further, the sputtering method is useful because it does not use harmful organic metal materials like CVD and does not cause a problem of detoxification of by-products and unused raw materials.
  • a target holder in a vacuum vessel evacuated to a vacuum is called a target made of a material to be deposited on the substrate. Hold the evaporation source.
  • a substrate holder in the vacuum vessel supports the substrate.
  • a gas such as Ar is introduced into the vacuum vessel, and plasma is generated by applying a high voltage to the target.
  • the target material is attached to the substrate supported by the substrate holder by utilizing the sputtering phenomenon of the target by the charged particles in the discharge plasma.
  • sputtered particles adhere to the substrate, and a film containing the target material is formed on the substrate.
  • an openable / closable shielding plate called a shutter is usually provided between a target and a substrate.
  • the film formation start timing is controlled so as not to start the film formation process. That is, the shutter is closed so that film formation is not performed on the substrate until a high voltage is applied to the target and plasma is generated until it is stabilized. Then, after the plasma is stabilized, the shutter is opened to start film formation.
  • a stable plasma can be used to form a film on the substrate with high controllability, so that a high-quality film can be formed.
  • a plasma processing apparatus disclosed in Patent Document 1 includes a wafer holder having a plate on which a wafer is mounted and a plurality of wafer lift pins in a vacuum chamber, a moving shutter that moves in parallel to the wafer, and a substrate by plasma.
  • a shutter storage unit for storing the moving shutter.
  • Patent Document 1 a film adheres to the inner wall of the evacuation chamber and the inner wall of the shutter housing portion, which causes particles.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a film forming technique that suppresses generation of particles in a chamber.
  • a sputtering apparatus includes a processing chamber for performing a film forming process, an exhaust chamber connected to the processing chamber via an exhaust port, and a connection to the exhaust chamber.
  • An exhaust device for exhausting the inside of the processing chamber through the exhaust chamber, a substrate holder placed in the processing chamber for placing a substrate, a target holder placed in the processing chamber, A shutter that can move to a shielded state that shields between the substrate holder and the target holder, or a retracted state that is retracted from between the substrate holder and the target holder, and the shutter to the shielded state, Or a driving means for driving the shutter to move to the retracted state;
  • a shutter housing part that is provided in the exhaust chamber and houses the shutter in the retracted state, can be attached to the exhaust chamber, covers at least a part of the exhaust port of the exhaust chamber, and opens the shutter housing part And a shield member formed on at least a part of the periphery of the portion.
  • An electronic device manufacturing method includes a processing chamber for performing a film forming process, an exhaust chamber connected to the processing chamber via an exhaust port, connected to the exhaust chamber, An exhaust device for exhausting the inside of the processing chamber through an exhaust chamber, a substrate holder installed in the processing chamber for mounting a substrate, a target holder installed in the processing chamber, and the substrate holder And a shutter that can move to a shielded state that shields between the target holder and a retracted state that is retracted from between the substrate holder and the target holder, and the shutter is in the shielded state or the retracted state Driving means for driving the shutter, and in the exhaust chamber A shutter housing portion that is provided and houses the shutter in the retracted state, covers a shutter housing portion that can be attached to the exhaust chamber, and at least a part of the exhaust port of the exhaust chamber; An electronic device manufacturing method using a sputtering apparatus comprising: a shielding member formed at least in part, wherein the first step of bringing the shutter
  • the present invention by providing a shutter housing portion and a shield that are separate from the exhaust chamber, it is possible to suppress the generation of particles in the chamber by preventing the film from adhering to the exhaust chamber. Further, by providing the shutter housing portion in the exhaust chamber, it is possible to suppress a rapid change in the exhaust conductance accompanying the opening / closing operation of the shutter.
  • FIG. 3 is a cross-sectional view taken along II in FIG. 2.
  • FIG. 3 is a cross-sectional view taken along the line II-II in FIG.
  • FIG. 3 is a diagram showing an outline of a substrate shutter 19. It is a figure which shows the outline of the cover ring. It is a block diagram of the main control part for operating a sputtering device.
  • FIG. 1 is a schematic view of a sputtering apparatus 1 of the present embodiment.
  • a sputtering apparatus is exemplified as the film forming apparatus.
  • the gist of the present invention is not limited to this example, and can be applied to, for example, a CVD apparatus and a PVD apparatus. .
  • the sputtering apparatus 1 includes a vacuum chamber 2 that can be evacuated, an exhaust chamber 8 that is provided adjacently via the vacuum chamber 2 and an exhaust port 301 (see FIG. 3), and an interior of the vacuum chamber 2 via the exhaust chamber 8. And an exhaust device for exhausting the air.
  • the exhaust device has a turbo molecular pump 48.
  • a dry pump 49 is connected to the turbo molecular pump 48 of the exhaust device. The reason why the exhaust device is provided below the exhaust chamber 8 is to make the footprint (occupied area) of the entire device as small as possible.
  • a target holder 6 for holding the target 4 via the back plate 5 is provided in the vacuum chamber 2.
  • the target holder 6 is disposed at an offset position with respect to the substrate mounting position of the substrate holder 7.
  • a target shutter 14 is installed so as to shield the target holder 6.
  • the target shutter 14 has a rotating shutter structure.
  • the target shutter 14 is shielded for a closed state (shielded state) that shields between the substrate holder 7 and the target holder 6 or an open state (retracted state) that opens between the substrate holder 7 and the target holder 6. Functions as a member.
  • the target shutter 14 is provided with a target shutter drive mechanism 33 for opening and closing the target shutter 14.
  • a substrate holder 7 for placing a substrate a substrate holder 7 for placing a substrate
  • a substrate shutter 19 provided between the substrate holder 7 and the target holder 6, and a substrate shutter drive mechanism for driving the substrate shutter 19 to open and close 32.
  • the substrate shutter 19 is disposed in the vicinity of the substrate holder 7 and is in a closed state in which the space between the substrate holder 7 and the target holder 6 is shielded or in an open state in which the space between the substrate holder 7 and the target holder 6 is opened. Functions as a shielding member.
  • the vacuum chamber 2 includes an inert gas introduction system 15 for introducing an inert gas (such as argon) into the vacuum chamber 2 and a reactive gas introduction for introducing a reactive gas (such as oxygen or nitrogen).
  • an inert gas introduction system 15 for introducing an inert gas (such as argon) into the vacuum chamber 2 and a reactive gas introduction for introducing a reactive gas (such as oxygen or nitrogen).
  • a system 17 and a pressure gauge (not shown) for measuring the pressure in the vacuum chamber 2 are provided.
  • the inert gas introduction system 15 is connected to an inert gas supply device (gas cylinder) 16 for supplying an inert gas.
  • the inert gas introduction system 15 includes piping for introducing an inert gas, a mass flow controller for controlling the flow rate of the inert gas, valves for shutting off and starting the gas flow, and A pressure reducing valve, a filter, and the like are configured as necessary, and a gas flow rate designated by a control device (not shown) can be stably flowed.
  • the inert gas is supplied from the inert gas supply device 16 and its flow rate is controlled by the inert gas introduction system 15, and then introduced into the vicinity of the target 4.
  • a reactive gas supply device (gas cylinder) 18 for supplying a reactive gas is connected to the reactive gas introduction system 17.
  • the reactive gas introduction system 17 includes piping for introducing reactive gas, a mass flow controller for controlling the flow rate of the inert gas, valves for shutting off and starting the gas flow, and A pressure reducing valve, a filter, and the like are configured as necessary, and a gas flow rate designated by a control device (not shown) can be flowed stably.
  • the reactive gas is supplied from the reactive gas supply device 18 and the flow rate of the reactive gas is controlled by the reactive gas introduction system 17, and then the reactive gas is introduced in the vicinity of a substrate holder 7 that holds a substrate 10 described later.
  • the inert gas and the reactive gas are introduced into the vacuum chamber 2 and used to form a film, the inert gas and the reactive gas are exhausted by the turbo molecular pump 48 and the dry pump 49 through the exhaust chamber 8.
  • the inner surface of the vacuum chamber 2 is electrically grounded.
  • an electrically grounded cylindrical shield member shields 40 a and 40 b
  • a ceiling facing shield 40c is provided so as to cover the inner surface (hereinafter, the shields 40a, 40b, and 40c are also simply referred to as “shields”).
  • the shield here is formed separately from the vacuum chamber 2 to prevent sputtered particles from directly adhering to the inner surface of the vacuum chamber 2 and to protect the inner surface of the vacuum chamber, and can be periodically replaced.
  • the shield is made of stainless steel or aluminum alloy.
  • the shield when heat resistance is calculated
  • the shield since the shield is electrically grounded (grounded), the plasma generated in the film formation space can be stabilized.
  • the surface of the shield is blasted by sandblasting or the like at least on the surface facing the film formation space, and minute irregularities are provided on the surface. By doing so, the film attached to the shield is difficult to peel off, and particles generated by the peeling can be reduced.
  • a metal thin film may be formed on the surface of the shield by metal spraying or the like.
  • the thermal spraying process is more expensive than only the blasting process, but there is an advantage that the adhered film may be removed together with the thermal sprayed film at the time of maintenance for removing the attached film by removing the shield. Further, the stress of the sputtered film is relaxed by the sprayed thin film, and there is an effect of preventing the film from peeling.
  • the exhaust chamber 8 connects the vacuum chamber 2 and the turbo molecular pump 48.
  • a main valve 47 is provided between the exhaust chamber 8 and the turbo molecular pump 48 for blocking between the sputtering apparatus 1 and the turbo molecular pump 48 when maintenance is performed.
  • FIG. 2 is an enlarged view for explaining the exhaust chamber 8 in detail.
  • 3 is a cross-sectional view taken along the line II of FIG. 4 is a cross-sectional view taken along the line II-II in FIG.
  • an attachable shutter accommodating portion 23 is provided in the exhaust chamber 8 to accommodate the substrate shutter 19 when the substrate shutter 19 is retracted from the vacuum chamber 2.
  • the shutter housing portion 23 has an opening 303 for taking in and out the substrate shutter 19, and portions other than the opening 303 are sealed.
  • the shutter container 23 is electrically grounded.
  • the shutter accommodating portion 23 is disposed in the exhaust chamber 8 so that an exhaust region communicating with the turbo molecular pump 48 is formed around the shutter accommodating portion 23 via the main valve 47. Is arranged.
  • FIG. 4 is a diagram illustrating a peripheral portion of the opening 303 of the shutter storage unit 23.
  • the shield 40 a (40 a 1, 40 a 2), the shield 40 b, and the shield 22 are formed in a cylindrical shape inside the vacuum chamber 2.
  • the exhaust path 401 (first exhaust path) formed between the shield 40a1 and the shield 40b is located above the opening 303 (position on the target holder 6 side forming the film forming unit). It is formed as a gap in the circumferential direction of the cylindrical member.
  • An exhaust path 403 (second exhaust path) formed between the shield 40 a 2 and the shield 22 is formed as a circumferential clearance of the cylindrical member at a position below the opening 303.
  • the shield 40a has an opening (hole) at a position corresponding to the opening 303 of the shutter storage unit 23, and functions as a first shield that covers the exhaust port.
  • the shield 40b is provided above the opening 303 of the shutter housing portion 23, and functions as a second shield that covers the exhaust port.
  • the shield 22 is provided below the opening 303 of the shutter housing portion 23 and functions as a third shield that covers the exhaust port.
  • a shield 40 a 1 is fixed around the opening 303 of the shutter housing portion 23 so as to cover the exhaust port 301 of the exhaust chamber 8.
  • An exhaust passage 401 is formed by the shield 40a1 and the shield 40b.
  • the tip of the shield 40a1 has a U-shaped divided concave portion, and the I-shaped shield 40b (convex shape portion) is not in contact with the U-shaped portion (concave shape portion).
  • the exhaust passage 401 is formed as a so-called labyrinth-shaped exhaust passage.
  • the labyrinth-shaped exhaust passage 401 also functions as a non-contact seal.
  • the I-shaped shield 40b (convex shape portion) is fitted in the U-shaped portion (concave shape portion) formed at the tip of the shield 40a1, and is in a non-contact state, that is, the concave shape portion and the convex shape. A certain gap is formed between the shape portion.
  • the exhaust port 301 of the shutter storage portion 23 is shielded. Therefore, it is possible to prevent the sputtered particles struck from the target from entering the exhaust chamber 8 through the exhaust path 401, and as a result, it is possible to prevent particles from adhering to the inner wall of the exhaust chamber 8. .
  • a shield 40a2 is fixed around the opening 303 of the shutter housing portion 23 so as to cover the exhaust port 301 of the exhaust chamber 8.
  • An exhaust path 403 is formed by the shield 40 a 2 and the shield 22 connected to the substrate holder 7.
  • the front end portion of the shield 22 has a U-shaped divided concave portion, and the I-shaped shield 40a2 (convex shape portion) is non-contact between the U-shaped portion (concave shape portion).
  • the exhaust path 403 is formed as a labyrinth-shaped exhaust path.
  • the exhaust port 301 of the shutter accommodating portion 23 is shielded by fitting the concave shape portion of the shield 22 and the convex shape portion of the shield 40a2.
  • the shutter housing portion 23 is separate from the exhaust chamber 8. This is because it is difficult to achieve both the pressure resistance and exhaust performance required for the exhaust chamber 8 and the dustproof performance required for the shutter storage unit 23. By providing the separate shutter housing portion 23 in the exhaust chamber 8, both of these can be easily achieved.
  • the exhaust conductance of the exhaust passage 401 is formed to be sufficiently larger than the exhaust conductance of the exhaust passage 403 at the position where the substrate holder is raised. That is, the gas flowing into the exhaust chamber 8 is structured to flow more easily in the exhaust passage 401 than in the exhaust passage 403.
  • the combined conductance is the sum of the exhaust conductances. Therefore, if one exhaust conductance is sufficiently larger than the other exhaust conductance, the smaller exhaust conductance can be ignored.
  • the exhaust conductance can be adjusted by the width of the gap of the exhaust passage and the overlap distance (length) of the labyrinth shape.
  • the width of the gap between the exhaust passage 401 and the exhaust passage 403 is approximately the same, and the overlap distance (length) of the labyrinth shape of the exhaust passage 401 is the overlap distance of the labyrinth shape of the exhaust passage 403. Since it is formed shorter than (length), the exhaust conductance of the exhaust passage 401 is larger than the exhaust conductance of the exhaust passage 403. For this reason, the gas introduced from the inert gas introduction system 15 and the reactive gas introduction system 17 into the process space in the vacuum chamber 2 (the space where the plasma is surrounded by the shield and the target) mainly passes through the exhaust passage 401. Exhausted.
  • the exhaust conductance from the process space of the vacuum chamber 2 to the exhaust chamber 8 has a structure that is not affected by the opening / closing operation of the substrate shutter 19. Since the main exhaust path from the process space in the vacuum chamber 2 to the exhaust chamber 8 is provided at a position not affected by opening and closing of the shutter, the exhaust from the process space in the vacuum chamber 2 is performed when the substrate shutter 19 is opened and closed. The exhaust conductance to the chamber 8 does not change. Accordingly, it is possible to stabilize the gas pressure in the process space in the vacuum chamber 2 that affects plasma generation when the substrate shutter 19 is opened and closed. Therefore, even if the substrate shutter 19 is opened and closed, the change in the exhaust conductance from the vacuum chamber 2 to the exhaust chamber 8 can be suppressed, the pressure in the vacuum chamber 2 can be stabilized, and high-quality film formation is possible. Become.
  • a magnet 13 for realizing magnetron sputtering is disposed behind the target 4 as viewed from the sputtering surface.
  • the magnet 13 is held by the magnet holder 3 and can be rotated by a magnet holder rotating mechanism (not shown). In order to make the erosion of the target uniform, the magnet 13 rotates during discharge.
  • the target 4 is installed at a position (offset position) obliquely above the substrate 10. That is, the center point of the sputtering surface of the target 4 is at a position that is shifted by a predetermined dimension with respect to the normal line of the center point of the substrate 10.
  • the target holder 6 is connected to a power supply 12 for applying sputtering discharge power. When a voltage is applied to the target holder 6 by the power source 12, discharge is started and sputtered particles are deposited on the substrate.
  • the sputtering apparatus 1 shown in FIG. 1 is provided with DC power supply, it is not limited to this, For example, you may provide RF power supply. When an RF power source is used, it is necessary to install a matching unit between the power source 12 and the target holder 6.
  • the target holder 6 is insulated from the vacuum chamber 2 at the ground potential by an insulator 34, and is made of a metal such as Cu, so that it becomes an electrode when DC or RF power is applied.
  • the target holder 6 has a water channel (not shown) inside, and is configured to be cooled by cooling water supplied from a water pipe (not shown).
  • the target 4 is composed of material components that are desired to be deposited on the substrate 10. Since it relates to the purity of the film, a high purity is desirable.
  • the back plate 5 installed between the target 4 and the target holder 6 is made of a metal such as Cu and holds the target 4.
  • a target shutter 14 is installed so as to cover the target holder 6.
  • the target shutter 14 functions as a shielding member for closing the space between the substrate holder 7 and the target holder 6 or opening the space between the substrate holder 7 and the target holder 6.
  • the target shutter 14 is provided with a target shutter drive mechanism 33 for driving the target shutter 14.
  • a target shutter drive mechanism 33 for driving the target shutter 14.
  • the counter shield 40 c has a hole in a portion facing the target holder 6.
  • a shielding member having a ring shape (hereinafter also referred to as “cover ring 21”) is provided on the surface of the substrate holder 7 and on the outer edge side (outer peripheral portion) of the mounting portion of the substrate 10.
  • the cover ring 21 prevents sputter particles from adhering to a location other than the film formation surface of the substrate 10 placed on the substrate holder 7.
  • the place other than the film formation surface includes the side surface and the back surface of the substrate 10 in addition to the surface of the substrate holder 7 covered by the cover ring 21.
  • the substrate holder 7 is provided with a substrate holder drive mechanism 31 for moving the substrate holder 7 up and down or rotating at a predetermined speed.
  • the substrate holder driving mechanism 31 can move the substrate holder 7 up and down in order to raise the substrate holder 7 toward the substrate shutter 19 in the closed state or to lower it with respect to the substrate shutter 19.
  • a substrate shutter 19 is disposed between the substrate holder 7 and the target holder 6 in the vicinity of the substrate 10.
  • the substrate shutter 19 is supported by the substrate shutter support member 20 so as to cover the surface of the substrate 10.
  • the substrate shutter drive mechanism 32 rotates and translates the substrate shutter support member 20 to insert the substrate shutter 19 between the target 4 and the substrate 10 at a position near the surface of the substrate 10 (closed state). By inserting the substrate shutter 19 between the target 4 and the substrate 10, the space between the target 4 and the substrate 10 is shielded.
  • the target holder 6 (target 4) and the substrate holder 7 (substrate 10) Is opened (open state).
  • the substrate shutter drive mechanism 32 drives the substrate shutter 19 to open and close in order to enter a closed state that shields between the substrate holder 7 and the target holder 6 or an open state that opens between the substrate holder 7 and the target holder 6. To do.
  • the substrate shutter 19 is stored in the shutter storage unit 23.
  • the shutter housing portion 23, which is the retreat location of the substrate shutter 19 is accommodated in the conduit of the exhaust path to the turbo molecular pump 48 for high vacuum exhaust, because the apparatus area can be reduced. .
  • the substrate shutter 19 is made of stainless steel or aluminum alloy. Moreover, when heat resistance is calculated
  • the surface of the substrate shutter 19 is blasted by sandblasting or the like at least on the surface facing the target 4 to provide minute irregularities on the surface. By doing so, the film attached to the substrate shutter 19 is difficult to peel off, and particles generated by the peeling can be reduced.
  • a metal thin film may be formed on the surface of the substrate shutter 19 by metal spraying or the like.
  • the thermal spraying process is more expensive than only the blasting process, but there is an advantage that the deposited film can be removed together with the thermal sprayed film at the time of maintenance for removing the adhered film by removing the substrate shutter 19. Further, the stress of the sputtered film is relaxed by the sprayed thin film, and there is an effect of preventing the film from peeling.
  • FIG. 5 is a diagram showing an outline of the substrate shutter 19 facing the cover ring 21.
  • the substrate shutter 19 is formed with a protrusion (protrusion 19 a) having a ring shape extending in the direction of the cover ring 21.
  • FIG. 6 is a diagram showing an outline of the cover ring 21 facing the substrate shutter 19.
  • the cover ring 21 is formed with a protrusion having a ring shape extending in the direction of the substrate shutter 19.
  • the cover ring 21 has a ring shape, and concentric protrusions (protrusions 21 a and 21 b) are provided on the surface of the cover ring 21 that faces the substrate shutter 19.
  • the protrusion 19a and the protrusions 21a and 21b are fitted in a non-contact state.
  • the protrusion 19a and the protrusions 21a and 21b are fitted in a non-contact state.
  • the other protrusion 19a fits in the recess formed by the plurality of protrusions 21a and 21b in a non-contact state.
  • FIG. 7 is a block diagram of the main control unit 100 for operating the sputtering apparatus 1 shown in FIG.
  • the main control unit 100 includes a power supply 12 for applying sputtering discharge power, an inert gas introduction system 15, a reactive gas introduction system 17, a substrate holder drive mechanism 31, a substrate shutter drive mechanism 32, a target shutter drive mechanism 33, and a pressure gauge. 41 and the gate valve 42 are electrically connected to each other, and are configured to manage and control the operation of the sputtering apparatus 1 described later.
  • the storage device 63 provided in the main control unit 100 stores a control program for executing the conditioning according to the present embodiment, a film forming method on a substrate accompanied by pre-sputtering, and the like.
  • the control program is implemented as a mask ROM.
  • the control program can be installed in a storage device 63 configured by a hard disk drive (HDD) or the like via an external recording medium or a network.
  • HDD hard disk drive
  • FIG. 8 is a schematic view for explaining the operation of the sputtering apparatus 1 when the substrate is carried out / in.
  • the gate valve 42 When the gate valve 42 is opened, the substrate 10 is unloaded / unloaded by a substrate transfer robot (not shown).
  • the shield 22 having a U-shaped tip is connected to the substrate holder 7.
  • the labyrinth formed by the shield 22 and the shield 40 a 2 is released, the conductance of the exhaust path 403 is increased, and the exhaust path 401 is exhausted compared to the exhaust path 401. In the path 403, gas flows more easily.
  • the exhaust path 403 can be used at the time of carrying out / carrying in the substrate, and the exhaust treatment can be effectively performed even in a short time during which the substrate is carried out / carrying in.
  • the sputtering apparatus 1 includes a semiconductor memory, a DRAM, an SRAM, a nonvolatile memory, an MRAM, an arithmetic element, a CPU, a DSP, an image input element, a CMOS sensor, a CCD, a video output element, and a liquid crystal display device. It is used for the manufacturing method of electronic devices.
  • FIG. 9 is a diagram showing a schematic configuration of a laminated film forming apparatus for flash memory (hereinafter also simply referred to as “laminated film forming apparatus”) which is an example of a vacuum thin film forming apparatus including the sputtering apparatus 1 according to the present embodiment. is there.
  • the laminated film forming apparatus shown in FIG. 9 includes a vacuum transfer chamber 910 having a vacuum transfer robot 912 therein.
  • a load lock chamber 911, a substrate heating chamber 913, a first PVD (sputtering) chamber 914, a second PVD (sputtering) chamber 915, and a substrate cooling chamber 917 are respectively connected via a gate valve 920. It is connected.
  • a substrate to be processed (silicon wafer) is set in a load lock chamber 911 for carrying the substrate in and out of the vacuum transfer chamber 910 and evacuated until the pressure reaches 1 ⁇ 10 ⁇ 4 Pa or less. Thereafter, using the vacuum transfer robot 912, the substrate to be processed is carried into the vacuum transfer chamber 910 in which the degree of vacuum is maintained at 1 ⁇ 10 ⁇ 6 Pa or less and transferred to a desired vacuum processing chamber.
  • the substrate to be processed is first transferred to the substrate heating chamber 913 and heated to 400 ° C., and then transferred to the first PVD (sputtering) chamber 914 to deposit an Al 2 O 3 thin film on the substrate to be processed by 15 nm. The film is formed to a thickness of.
  • the substrate to be processed is transferred to the second PVD (sputtering) chamber 915, and a TiN film is formed thereon to a thickness of 20 nm.
  • the substrate to be processed is transferred into the substrate cooling chamber 917, and the substrate to be processed is cooled to room temperature. After all the processes are completed, the substrate to be processed is returned to the load lock chamber 911, and after introducing dry nitrogen gas to atmospheric pressure, the substrate to be processed is taken out from the load lock chamber 911.
  • the degree of vacuum in the vacuum processing chamber is 1 ⁇ 10 ⁇ 6 Pa or less.
  • the magnetron sputtering method is used for forming the Al2O3 film and the TiN film.
  • FIG. 10 is a diagram illustrating a processing flow of an electronic device product related to an electronic device manufacturing method using the sputtering apparatus 1 according to the embodiment of the present invention.
  • Ti is used as the target 4 mounted on the sputtering apparatus 1
  • argon is used as an inert gas
  • nitrogen is used as a reactive gas
  • step S1 after replacing the target and the shield, the vacuum vessel 2 is evacuated and controlled to a predetermined pressure.
  • target cleaning refers to sputtering performed to remove impurities and oxides attached to the surface of the target.
  • the target cleaning is performed by setting the height of the substrate holder so that the substrate shutter 19 and the cover ring 21 form a labyrinth seal. By setting in this way, it is possible to prevent sputter particles from adhering to the substrate mounting surface of the substrate holder. Note that the target cleaning may be performed with the substrate placed on the substrate holder.
  • step 3 the main control unit 100 starts a film forming operation in accordance with a film formation start instruction input to the main control unit 100 from an input device (not shown).
  • conditioning in step S4 is performed.
  • Conditioning is a process in which discharge is performed to stabilize film formation characteristics, and a target is sputtered to adhere sputtered particles to the inner wall of the chamber.
  • FIG. 11 is a diagram illustrating a procedure when conditioning is performed using the sputtering apparatus 1. Specifically, step number, time in each process (set time), target shutter position (open, closed), substrate shutter position (open, closed), target applied power, Ar gas flow rate, and nitrogen gas flow rate, Is shown. These procedures are stored in the storage device 63 and are continuously executed by the main control unit 100.
  • a gas spike is performed (S1101).
  • the pressure in the chamber is increased, and a state in which discharge is easily started in the next plasma ignition step is created.
  • the target shutter 14 and the substrate shutter 19 are closed, nitrogen gas is not introduced, and the argon gas flow rate is 400 sccm.
  • the argon gas flow rate is preferably 100 sccm or more in order to facilitate ignition in the next plasma ignition step.
  • a plasma ignition process is performed (S1102). While maintaining the shutter position and gas conditions, 1000 W DC power is applied to the Ti target to generate plasma (plasma ignition). By using this gas condition, it is possible to prevent the generation failure of plasma that tends to occur at a low pressure.
  • pre-sputtering (S1103) is performed.
  • the gas condition is changed to 100 sccm of argon while maintaining the power applied to the target (target applied power). This procedure can maintain the discharge without losing the plasma.
  • conditioning 1 (S1104) is performed.
  • the target shutter 14 is opened while the target applied power, the gas flow rate condition, and the position of the substrate shutter 19 are kept closed.
  • the shield inner wall can be covered with a low-stress film by adhering sputtered particles from the Ti target to the chamber inner wall including the shield inner wall. Therefore, it is possible to prevent the sputtered film from being peeled off from the shield, so that it is possible to prevent the peeled film from scattering into the chamber and falling onto the device, thereby deteriorating the characteristics of the product.
  • a gas spike (S1105) is performed again.
  • the application of power to the target is stopped, the argon gas flow rate is 200 sccm, and the nitrogen gas flow rate is 10 sccm.
  • the argon gas flow rate is preferably a flow rate larger than the conditioning 2 step (S1108) described later (for example, 100 sccm or more) in order to facilitate ignition in the next plasma ignition step.
  • the conditioning 2 step (S1108) described later since the nitride film is formed by the reactive sputtering method in which nitrogen gas is introduced, the introduction of nitrogen gas from the gas spike step also has an effect of preventing a rapid gas flow rate change. .
  • Plasma ignition process is performed (S1106).
  • Plasma is generated by applying DC power of 750 W to the Ti target while maintaining the shutter position and gas flow rate conditions (plasma ignition). By using this gas condition, it is possible to prevent generation failure of plasma that is likely to occur at a low pressure.
  • pre-sputtering (S1107) is performed.
  • the gas flow rate condition is changed to 10 sccm of argon and 10 sccm of nitrogen gas while maintaining the target applied power. This procedure can maintain the discharge without losing the plasma.
  • conditioning 2 (S1108) is performed.
  • the target shutter 14 is opened while the target applied power, the gas flow rate condition, and the position of the substrate shutter 19 are kept closed.
  • nitrogen which is a reactive gas
  • a nitride film is deposited on the inner wall of the chamber including the inner wall of the shield. Rapid changes in state can be suppressed.
  • the film formation in the next substrate film formation process can be performed stably from the beginning, so that there is a great improvement effect on the improvement of manufacturing stability in the device manufacturing. .
  • the time required for each of the above procedures is set to an optimum value.
  • the first gas spike (S1101) is 0.1 seconds
  • the plasma ignition (S1102) is 2 seconds
  • the pre-sputtering (S1103) is 5 seconds.
  • conditioning 1 (S1104) for 240 seconds
  • second gas spike (S1105) for 5 seconds
  • second plasma ignition (S1106) for 2 seconds
  • second pre-sputtering for 5 seconds
  • the second gas spike process (S1105), the subsequent plasma ignition process (S1106), and the pre-sputter process (S1107) can be omitted. If omitted, it is desirable in that the conditioning time can be shortened.
  • the conditioning 2 step (S1108) in which nitrogen gas is added following the conditioning 1 step (S1104), which is an argon gas discharge, is performed, the properties of the plasma change greatly while continuing the discharge. Therefore, particles may increase due to the transient state.
  • inserting these processes (S1105, S1106, S1107) including temporarily stopping the discharge and replacing the gas between the conditioning 1 process (S1104) and the conditioning 2 process (S1108). Since the rapid fluctuation of the plasma characteristics during conditioning can be further suppressed, the risk of generating particles can be reduced.
  • Conditioning 2 (S1108) which is reactive sputtering, is substantially the same as the film forming conditions on the substrate described later.
  • step S5 including a film forming process on the substrate is performed.
  • the procedure for the film-forming process which comprises step S5 is demonstrated.
  • a substrate is carried in (S501).
  • the gate valve 42 is opened, the substrate 10 is loaded into the vacuum chamber 2 by a substrate transfer robot (not shown) and a lift mechanism (not shown), and the substrate placement surface on the substrate holder 7 is loaded. Placed on. The substrate holder 7 moves upward to the film forming position with the substrate placed thereon.
  • a gas spike is performed (S502).
  • the target shutter 14 and the substrate shutter 19 are closed, and argon gas, for example, 200 sccm and nitrogen gas, 10 sccm are introduced.
  • argon gas for example, 200 sccm and nitrogen gas, 10 sccm are introduced.
  • the amount of argon gas is larger than the amount of argon gas introduced in the film forming step (S506) to be described later from the viewpoint of ease of starting discharge.
  • the time required for the gas spike step (S502) is, for example, about 0.1 seconds, as long as the pressure required in the next ignition step (S503) can be secured.
  • plasma ignition is performed (S503).
  • the target shutter 14 and the substrate shutter 19 remain closed, and the flow rates of argon gas and nitrogen gas remain the same as the conditions in the gas spike process (S502), and the target 4 A direct current (DC) power of 750 W is applied to generate discharge plasma in the vicinity of the sputtering surface of the target.
  • the time required for the plasma ignition step (S503) may be as long as the plasma is ignited, for example, 2 seconds.
  • pre-sputtering is performed (S504).
  • the target shutter 14 and the substrate shutter 19 are kept closed, the flow rate of argon gas is reduced to, for example, 10 sccm, and the flow rate of nitrogen gas is set to 10 sccm.
  • the direct current (DC) power to the target is, for example, 750 W, and the discharge is maintained.
  • the time required for the pre-sputtering step (S504) may be a time required for preparation for the next short conditioning, for example, 5 seconds.
  • short conditioning is performed (S505).
  • the target shutter 14 is opened and opened.
  • the substrate shutter 19 is kept closed, and the flow rate of argon gas is maintained at 10 sccm and the flow rate of nitrogen gas is maintained at 10 sccm.
  • the direct current (DC) power to the target is, for example, 750 W, and the discharge is maintained.
  • a titanium nitride film is formed on the inner wall of the shield and the like, and it is effective in forming a film in a stable atmosphere in the film formation step (S506) on the next substrate.
  • the time required for the short conditioning step (S505) is shorter than the previous conditioning 1 (S1104) and conditioning 2 (S1108) because the atmosphere is adjusted by the previous conditioning (S4). For example, It may be about 5-30 seconds.
  • the conditions of argon gas, nitrogen gas, and DC power are maintained the same as the conditions of the short conditioning step (S505) to maintain the discharge, and the substrate shutter 19 is maintained while the target shutter 14 is kept open.
  • the film is opened and film formation on the substrate is started (S506). That is, the film forming conditions on the substrate 10 are an argon gas flow rate of 10 sccm, a nitrogen gas flow rate of 10 sccm, and a DC power applied to the target of 750 W.
  • the exhaust conductance of the exhaust passage 401 is larger than the exhaust conductance of the exhaust passage 403, the gas is mainly exhausted from the exhaust passage 401.
  • the exhaust conductance of the process space (the space containing the plasma surrounded by the shield and the target) in the chamber 2 when mainly exhausted through the exhaust path 401 is less affected by the opening / closing of the substrate shutter 19.
  • the gas exhausted from the exhaust path 401 is exhausted to the exhaust chamber 8, but the exhaust conductance from the process space to the exhaust device when the substrate shutter 19 is changed from the closed state to the open state by the shutter housing portion 23. This is because the change is suppressed. Accordingly, it is possible to suppress fluctuations in plasma characteristics due to fluctuations in the pressure of the process space when starting film formation on the substrate where the substrate shutter 19 opens while maintaining the discharge.
  • substrate unloading 507 is performed.
  • the substrate holder 7 moves downward, the gate valve 42 is opened, and the substrate 10 is unloaded by a substrate transfer robot (not shown) and a lift mechanism (not shown).
  • the main control unit 100 determines whether or not conditioning is necessary (S6).
  • the conditioning necessity determination step (S6) the main control unit 100 determines the necessity of conditioning based on the determination conditions stored in the storage device 63. If it is determined that conditioning is necessary, the process returns to step S4, and conditioning is performed again (S4). On the other hand, if it is determined in step S6 that the conditioning is not necessary by the main control unit 100, the process proceeds to the next determination of S7.
  • step S7 a determination is made based on whether or not an end signal is input to the main control unit 100, whether or not there is a processing substrate supplied to the apparatus, and if it is determined not to end (NO in S7), the process Is returned to step S501, and the process from the substrate loading (S501) to the substrate unloading (S507) through the film formation (S506) is performed again. In this manner, the film forming process on the product substrate is continued for a predetermined number, for example, several hundreds.
  • conditioning necessity determination step (S6) After continuous processing, waiting time may occur for reasons such as product waiting time.
  • the main control unit 100 determines that conditioning is necessary, and performs the conditioning in step S4 again.
  • the upper surface of a high stress film such as TiN attached to the inner surface of the shield can be covered with a low stress film such as Ti.
  • TiN continuously adheres to the shield the stress of the TiN film is high and the adhesion with the shield is weak, so that film peeling occurs and becomes particles.
  • Ti sputtering is performed for the purpose of preventing film peeling.
  • the Ti film has high adhesion to the shield and TiN film, and has an effect of preventing peeling of the TiN film (wall coating effect).
  • the entire shield it is effective to use a substrate shutter.
  • conditioning can be performed without depositing a sputtered film on the substrate installation surface of the substrate holder. After this conditioning, the film forming process S5 (S501 to S507) is performed again.
  • FIG. 12 is a diagram illustratively explaining a condition for starting conditioning (condition for determining whether conditioning is necessary).
  • the judgment conditions for starting conditioning are the total number of processed substrates, the total number of processed lots, the total film thickness formed, the amount of power applied to the target, and the film formation on that shield after the shield replacement This is a change in the film forming conditions accompanying the change in the amount of power applied to the target, the standby time and the electronic device to be processed.
  • Conditioning start timing can be after the processing of a lot (a bundle of substrates set for convenience in managing the manufacturing process, and usually 25 substrates are set as one lot).
  • processing lots When there are a plurality of lots to be processed (processing lots), the total number of processing lots becomes the determination condition, and the processing start timing after the processing of all the lots can be set (conditioning start conditions 1, 3, 5, 7, 9, 11).
  • the processing can be interrupted and used as the conditioning start timing (conditioning start conditions 2, 4). , 6, 8, 10, 12).
  • the method (1201) of judging based on the total number of processed substrates has an advantage that the conditioning interval becomes constant even if the number of substrates constituting the lot varies.
  • the method (1202) for determining based on the sum of the processing lots has an advantage that the conditioning time can be predicted when the process management is performed by the number of lots.
  • the method (1203) of determining by the film thickness formed by the film forming apparatus has an advantage that conditioning can be performed at an appropriate timing when film peeling from the shield depends on an increase in film thickness.
  • the method (1204) for determining based on the integrated power of the target has an advantage that conditioning can be performed at an appropriate timing when the target surface changes due to the film formation process.
  • the method (1205) for determining by the integrated power per shield has an advantage that conditioning can be performed at an appropriate timing even when the cycle of shield replacement and target replacement is shifted.
  • the method (1206) for determining by the standby time is an effect of stabilizing the film formation characteristics in a good state when there is a concern that the residual gas concentration or temperature in the film formation chamber changes during the standby time and the film formation characteristics deteriorate. There is.
  • the method (1207) using the change of the film formation condition (product manufacturing condition) on the substrate as the determination condition has an effect that the film can be stably formed on the substrate even when the film formation condition is changed.
  • the state of the shield inner wall surface and the target surface changes. These changes lead to variations in gas composition and electrical properties due to the gettering performance of the shield inner wall surface and the target surface, and as a result, cause variations in deposition properties on the substrate within the lot.
  • the method (1207) using the change of the film formation condition (product manufacturing condition) on the substrate as the determination condition has an effect of suppressing such a defect.
  • the method of performing conditioning after lot processing has an effect of preventing the lot processing from being interrupted when the production process is managed in units of lots (conditioning start conditions 1, 3, 5, 7, 9, 11 ).
  • the method of interrupting the conditioning during the lot processing has an advantage that it can be carried out at an accurate conditioning timing (conditioning start conditions 2, 4, 6, 8, 10, 12).
  • condition start condition 13 When the change of the film forming condition becomes the determination condition, the conditioning is performed before the lot processing (conditioning start condition 13).
  • FIG. 13 is a view showing a result of measuring the number of particles adhered on the substrate once a day when the processing of FIG. 10 is performed using the sputtering apparatus 1 according to the embodiment of the present invention.
  • the horizontal axis represents the measurement date, and the vertical axis represents the number of particles of 0.09 ⁇ m or more observed on a 300 mm diameter silicon substrate.
  • the number of particles was measured using a surface inspection apparatus “SP2” (trade name) manufactured by KLA Tencor. This data shows that a very good number of particles of 10 or less per substrate could be maintained over a relatively long period of 16 days.
  • FIG. 14 is a schematic view of a modification of the sputtering apparatus according to the embodiment of the present invention.
  • the sputtering apparatus 10 of this embodiment has basically the same configuration as that of the sputtering apparatus 10 shown in FIG. 1, and the same reference numerals are given to the same structural members, and detailed description thereof is omitted.
  • an exhaust path (first exhaust path) 405 is provided in the opposing shield 40c on the ceiling instead of providing the exhaust port of the shield 4a1. In this way, the pressure in the vacuum chamber can be stabilized, and at the same time, the sputtered particles are less likely to be deposited in the vicinity of the exhaust port 405, and the exhaust conductance can be kept constant. Further, the exhaust passage 405 of the opposing shield 40c has a labyrinth structure.
  • FIG. 15 is a diagram for explaining that the shutter container and the shield can be attached.
  • the sputtering apparatus of FIG. 15 has basically the same configuration as the sputtering apparatus 1 shown in FIG. 1, and the same reference numerals are given to the same structural members, and detailed description thereof is omitted.
  • a flange portion of the shield 40 a is attached to the bottom surface of the shutter housing 23, and is further supported on the bottom surface of the chamber by a support column 24 on the flange portion of the shield 40 a.
  • the shutter housing 23, the flange portion of the shield 40a, and the support column 24 are fixed by screws and are configured to be attachable.
  • a shield 40b is fixed to the upper surface of the shutter housing 23 by screwing so that the shutter 40b can be attached.
  • the shutter container 23 and the shields 40a and 40b are configured to be attachable, they can be periodically replaced with new shutter containers and shields, or can be cleaned. Therefore, excessive generation of particles in the chamber can be prevented. By suppressing the generation of particles in the chamber, the yield of products when manufacturing electronic devices is improved by forming a film on the surface of the substrate 10 placed on the substrate placement portion 27 of the substrate holder 7. Can be made. In addition, since the operating rate of the sputtering apparatus is increased by using the shutter container 23 and the shield that can be attached, the production efficiency of the product can be improved.
  • FIG. 16 is an enlarged view for explaining a configuration for introducing a reactive gas into the shutter housing 23 according to the present invention.
  • the shutter container 23 includes a cover plate 23a and a frame body 23b from the viewpoint of ease of cleaning during replacement and cleaning.
  • the gas introduction pipe 161 is installed so as to introduce gas into the chamber from the outside of the chamber 8, and further passes through the gas introduction opening 162 provided in the frame body 23 b of the shutter container 23 to enter the shutter container 23. It reaches.
  • the gas introduction opening 162 is circular and has a diameter larger than that of the gas introduction pipe 161.
  • the diameter of the gas pipe 161 is 6.35 mm
  • the diameter of the gas introduction opening 162 is 7 mm
  • the length 165 of the gas pipe protruding into the shutter container 23 is 15 mm.
  • the height 163 of the opening 162 of the shutter container is 33 mm
  • the width of the opening is 450 mm (not shown).
  • the gap created by the difference in diameter between the gas introduction pipe 161 and the opening 162 is about 0.5 mm, which is sufficiently smaller than 33 mm, which is the height 163 of the shutter container.
  • the conductance from the shutter container to the process space can be made sufficiently larger than the conductance of the gap between the gas introduction pipe 161 and the opening 162 in this way. desirable. This is because the gas is surely introduced into the process space even if there are variations in the shape of the opening 162 and variations in the mounting position of the shutter storage container. The effect that the film formation characteristics are stabilized by reliably introducing the gas is particularly remarkable in the case of a reactive gas.
  • the position of the gas introduction opening 162 is preferably on the opposite side of the opening of the shutter container from the position of the shutter when the shutter is in the retracted state.
  • a reactive gas supply device (gas cylinder) 18 for supplying a reactive gas is connected to the reactive gas introduction system 17. Furthermore, as shown in FIG. 16, a conductance adjusting member 166 having an opening through which the gas introduction pipe 161 passes through the gas introduction opening 162 may be provided to be attachable.
  • the diameter of the gas introduction opening 162 is sufficiently larger than the diameter of the gas pipe 161, for example, 12 mm or more, and the diameter of the opening through which the gas pipe of the conductance adjusting member 166 passes is slightly smaller than the outer diameter of the gas pipe 161. It is desirable to make it large, for example, 7 mm.
  • the shutter housing container is attached by first screwing the gas introduction pipe 161 into the support column 24 while inserting the gas introduction pipe 161 into the opening 162 provided in the shutter container 23, and then covering the conductance adjusting member 166 around the gas introduction pipe. Install as follows. Thereafter, the lid 23a of the shutter container is fixed to the upper part of the frame 23b of the shutter container by screws or the like.
  • a gas pipe passage may be provided inside the support column 24 to introduce gas into the shutter housing 23.
  • the gas pipe 161 may not be installed. In this configuration, since the number of parts can be reduced, maintenance work can be simplified.
  • a through-hole 29 through the exhaust device 48 may be provided inside the shutter housing 23.
  • FIG. 17 is an enlarged view for explaining this embodiment. Since the inside of the shutter housing 23 is a position where the sputtered particles hardly reach, it is possible to prevent the through-hole 29 from being blocked by the sputtered particles. Further, by adopting such a configuration, the residual gas staying inside the shutter housing 23 can be efficiently exhausted.
  • the through hole 29 is provided on the bottom surface of the frame body 23b of the shutter container 23. However, the through hole 29 may be provided on the side surface or the upper surface side of the shutter container 23. Further, when the through-hole 29 is provided in the shutter housing 23, the through-hole 29 may be configured to be opened and closed by installing a gate valve, for example. By adopting such a structure, it is possible to achieve both exhaust of residual gas in the shutter housing 23 and stable exhaust during film formation.
  • a measuring means 181 pressure gauge, partial pressure gauge, spectrometer, etc.
  • a film forming method with improved reproducibility can be realized by performing film forming or conditioning while adjusting the gas flow rate based on the measurement result by the measuring means 181. Control by the main control unit 100 may be used for such adjustment.
  • FIG. 18 is a diagram for explaining this embodiment.
  • the measuring means 181 is connected to the inside of the shutter container 23, and a part thereof may be provided outside the chamber. Information on the measurement result by the measuring means 181 is transmitted to the main control unit 100 from an input / output port of a measuring instrument (not shown). Since the inside of the shutter container 23 is a position where the sputtered particles are difficult to reach, it is possible to prevent the measuring unit 181 from being blocked by the sputtered particles.
  • the shield member is provided around the entire opening of the shutter housing 23.
  • the present invention is not limited to this, and at least a part of the periphery of the opening of the shutter housing 23 (for example, the shutter)
  • a shield member may be provided on the upper portion of the opening of the container 23.
  • the shield member is also provided so as to be attachable to the shutter housing 23, but the shield member may be integrated with the shutter housing 23.
  • the single target holder (cathode) 6 is used.
  • the present invention is not limited to this, and two or more target holders may be provided.

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PCT/JP2010/007140 2010-03-26 2010-12-08 スパッタリング装置及び電子デバイスの製造方法 WO2011117945A1 (ja)

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US9322092B2 (en) 2016-04-26

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