WO2011103720A1 - Boîtier de semi-conducteur pour dispositif mems et son procédé de fabrication - Google Patents
Boîtier de semi-conducteur pour dispositif mems et son procédé de fabrication Download PDFInfo
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- WO2011103720A1 WO2011103720A1 PCT/CN2010/070775 CN2010070775W WO2011103720A1 WO 2011103720 A1 WO2011103720 A1 WO 2011103720A1 CN 2010070775 W CN2010070775 W CN 2010070775W WO 2011103720 A1 WO2011103720 A1 WO 2011103720A1
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- interposer
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- semiconductor package
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- cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/73265—Layer and wire connectors
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
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- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
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- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/1617—Cavity coating
- H01L2924/16171—Material
- H01L2924/16172—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
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- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H01L2924/166—Material
- H01L2924/1679—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Definitions
- This invention relates generally to semiconductor packaging, and relates more particularly to packaging for micro-electro-mechanical system (MEMS) devices and methods of manufacturing the same.
- MEMS micro-electro-mechanical system
- MEMS micro-electro-mechanical system
- Other MEMS devices also can use similar air cavity packages.
- MEMS microphones Recently, the demand for MEMS microphones has increased because of the increased demand for cellular telephones and the incorporation of MEMS microphones in more portable audio devices and digital camera and video products.
- FIG. 1 illustrates a cross-sectional view of an example of a semiconductor package along the I-I line (FIG. 2), according to a first embodiment
- FIG. 2 illustrates a top, front, left isometric view of the semiconductor package of FIG. 1, according to the first embodiment
- FIG. 3 illustrates a bottom, front, left isometric view of the semiconductor package of FIG. 1, according to the first embodiment
- FIG. 4 illustrates a flow chart for an embodiment of a method of manufacturing a semiconductor package, according to the first embodiment
- FIG. 5 illustrates a top, front, left isometric view of an example of a semiconductor package after the providing leadframe, according to the first embodiment.
- FIG. 6 illustrates a top, front, left isometric view of an example of the semiconductor package of FIG. 5 after providing non-electrically conductive material around the leadframe, according to the first embodiment.
- FIG. 7 illustrates a cross-sectional view of the semiconductor package of
- FIG. 8 illustrates a top, front, left isometric view of an example of the semiconductor package of FIG. 5 after providing attachment material to form mounting pads, according to the first embodiment
- FIG. 9 illustrates a cross-sectional view of the semiconductor package of
- FIG. 5 along the IX-IX line (FIG. 8) after providing the attachment material to form the mounting pads, according to the first embodiment
- FIG. 10 illustrates a top, front, left isometric view of an example of the semiconductor package of FIG. 5 after coupling an interposer to a base, according to the first embodiment
- FIG. 11 illustrates a cross-sectional view of the semiconductor package of
- FIG. 5 along the XI-XI line (FIG. 10) after coupling the interposer to the base, according to the first embodiment;
- FIG. 12 illustrates a top, front, left isometric view of an example of semiconductor package of FIG. 5 after coupling at least one MEMS device and at least one electrical component to the interposer, according to the first embodiment;
- FIG. 13 illustrates a cross-sectional view of the semiconductor package of
- FIG. 5 along the XIII-XIII line (FIG. 12) after coupling at least one MEMS devices and at least one electrical components to the interposer, according to the first embodiment;
- FIG. 14 illustrates a top, front, left isometric view of an example of the semiconductor package of FIG. 5 after wire bonding the interposer, the MEMS device, the electrical component, and the leadframe, according to the first embodiment
- FIG. 15 illustrates a cross-sectional view of the semiconductor package of
- FIG. 5 along the XV-XV line (FIG. 14) after wire bonding the interposer, the MEMS device, the electrical component, and the leadframe, according to the first embodiment;
- FIG. 16 illustrates a cross-sectional view of a lid after applying an epoxy to the lid, according to the first embodiment;
- FIG. 17 illustrates a cross-sectional view of a semiconductor package, according to a second embodiment
- FIG. 18 illustrates a top view of a base of a semiconductor package, according to a third embodiment
- FIG. 19 illustrates a bottom view of the base of FIG. 18, according to the third embodiment
- FIG. 20 illustrates a side view of the base of FIG. 18, according to the third embodiment
- FIG. 21 illustrates a cross-sectional view of the base of FIG. 18 along the
- FIG. 22 illustrates a cross-sectional view of the base of FIG. 18 along the
- FIG. 23 illustrates a front view of the base of FIG. 18, according to the third embodiment
- FIG. 24 illustrates a top view of an interposer of the semiconductor package of FIG. 18, according to the third embodiment
- FIG. 25 illustrates a top view of a base of a semiconductor package, according to a fourth embodiment
- FIG. 26 illustrates a top view of an interposer of the semiconductor package of FIG. 25, according to the fourth embodiment.
- FIG. 27 illustrates a cross-sectional view of an example of a semiconductor package, according to a fifth embodiment.
- the drawing figures illustrate the general manner of construction, and descriptions and details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the invention. Additionally, elements in the drawing figures are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of embodiments of the present invention. The same reference numerals in different figures denote the same elements.
- Couple should be broadly understood and refer to connecting two or more elements or signals, electrically, mechanically and/or otherwise.
- Two or more electrical elements may be electrically coupled but not be mechanically or otherwise coupled; two or more mechanical elements may be mechanically coupled, but not be electrically or otherwise coupled; two or more electrical elements may be mechanically coupled, but not be electrically or otherwise coupled. Coupling may be for any length of time, e.g., permanent or semi-permanent or only for an instant.
- Electrical coupling and the like should be broadly understood and include coupling involving any electrical signal, whether a power signal, a data signal, and/or other types or combinations of electrical signals.
- Mechanical coupling and the like should be broadly understood and include mechanical coupling of all types.
- a semiconductor package can include: (a) a base having a cavity; (b) an interposer coupled to the base and at least partially over the cavity such that the interposer and the base form a back chamber, the interposer has a first opening into the back chamber; (c) a micro-electro-mechanical system device located over the interposer and the first opening; and (d) a lid coupled to the base.
- an air cavity package can include: (a) a substrate with: (1) a leadframe with one or more leads; and (2) a plastic material with a cavity and at least partially surrounding the one or more leads; (b) a metal interposer with a first opening and coupled to the substrate such that the metal interposer provides a top for the cavity and such that the metal interposer and the plastic material form a first interior space; (c) a micro-electromechanical system microphone at least partially located over the first aperture in the metal interposer; (d) one or more semiconductor devices located over the metal interposer; and (e) a lid electrically coupled to a first one of the one or more leads and mechanically coupled to the substrate.
- FIG. 1 illustrates a cross-sectional view of semiconductor package 100 along the I-I line (FIG. 2), according to a first embodiment.
- FIG. 2 illustrates a cross-sectional view of semiconductor package 100 along the I-I line (FIG. 2), according to a first embodiment.
- FIG. 2 illustrates a top, front, left isometric view of semiconductor package 100, according to the first embodiment.
- FIG. 3 illustrates a bottom, front, left isometric view of semiconductor package 100, according to the first embodiment.
- Semiconductor package 100 is merely exemplary and is not limited to the embodiments presented herein. Semiconductor package 100 can be employed in many different embodiments or examples not specifically depicted or described herein.
- an air cavity package or semiconductor package 100 can be configured to electrically couple to a printed circuit board (PCB) (not shown).
- Semiconductor package 100 can include: (a) a lid 110; (b) a base 130 with a cavity 639 (FIG. 6); (c) an interposer 120; (d) at least one MEMS device 105; (d) at least one electrical component 106; and (e) one or more wires 144, 145, 146, 147, and 1448 (FIG. 14).
- Interposer 120 can be a separate or non-integrally formed element from base 130.
- semiconductor package 100 does not include at least one electrical component 106.
- MEMS device 105 can be a MEMS microphone, which is commonly found in cellular telephones and other audio-related applications.
- MEMS device 105 can include other types of semiconductor sensors such as altimeters, chemical sensors, or light sensors.
- Electrical component 106 can be an application specific integrated circuit
- electrical component 106 can be a passive device (e.g., a capacitor, a resistor, or inductor) or single active device (e.g., a power transistor). In still further embodiments, electrical component 106 can be one or more ASICs and one or more passive devices. In some examples, wires 145 and 146 can electrically couple electrical component 106 to MEMS device 105.
- base 130 can include: (a) leadframe 132; (b) non- electrically conductive material 131 with apertures 638 (FIG. 6), 641 (FIG. 6), and 736 (FIG. 7); and (c) mounting pads 133 and 134 located at least partially in apertures 641 (FIG. 6) and 736 (FIG. 7), respectively.
- Apertures 638 (FIG. 6) provide access to leadframe 132 such leadframe 132 can be electrically coupled to MEMS device 105, electrical component 106, and/or interposer 120 using wires (e.g. wires 144, 147, and 1448 (FIG. 14)).
- Mounting pads 133 can be used to couple semiconductor package 100 to a PCB (not shown) by, for example, surface mount adhesive techniques (SMT), solder balls, or flip chip techniques.
- SMT surface mount adhesive techniques
- leadframe 132 can include electrical leads 581, 582,
- electrical leads 582 and 583 can be coupled to ground.
- Lead 581 can be coupled to electrical power, and lead 584 can be an electrical signal lead.
- leads 581, 582, 583, and 584 can have different uses.
- electrical leads 581, 582, 583, and 584 can have a thickness of approximately 0.13 millimeters (mm) and a length and width of approximately 0.20 mm. In one embodiment, electrical leads 581, 582, 583, and 584 can have squared off corners. However, the present invention is not limited by any specific material, size, or thickness of electrical leads 581, 582, 583, and 584.
- non-electrically conductive material 131 can be located around leadframe 132. Furthermore, non-electrically conductive material can have cavity 639 (FIG. 6) with a bottom 125 and a shelf 137. Shelf 137 can be designed such that interposer 120 can rest and be mechanically coupled to shelf 137. When interposer 120 is coupled to shelf 137, non-electrically conductive material 131 and interposer 120 form a back chamber 108 there between. For example, interposer 120 can act as a top of cavity 639 and thereby form an interior space (i.e., back chamber 108). Including back chamber 108 in base 130 can improve the performance of MEMS device 105.
- bottom 125 can have a first height (e.g., 0.20 mm) measured from bottom surface 126 of non-electrically conductive material 131 ; shelf 137 can have a second height (e.g., 0.30 mm) measured from bottom surface 126; and top surface 127 of non-electrically conductive material 131 can have a third height (e.g., 0.40 mm) measured from bottom surface 126.
- the first height can be less than the second height
- the second height can be less than the third height.
- interposer 120 can have a first thickness (e.g., 0.10 mm or 0.065 mm). In some examples, the first thickness is substantially equal to or less than a difference in height between the second height and the third height.
- non-electrically conductive material 131 can comprise LCP (liquid crystal polymer) plastic, PEEK (polyetheretherketone) plastic, ABS (acrylonitrile butadiene styrene) plastic, PCV (polyvinyl chloride) plastic, PCB (polychlorinated biphenyl) plastic, an epoxy resin, BT (bismaleimide triazine resin) laminate, an organic laminate, or the equivalent.
- LCP liquid crystal polymer
- PEEK polyetheretherketone
- ABS acrylonitrile butadiene styrene
- PCV polyvinyl chloride
- PCB polychlorinated biphenyl
- an epoxy resin BT (bismaleimide triazine resin) laminate
- organic laminate or the equivalent.
- LCP is preferred over other materials because of material stiffness, good dimensional stability with low shrinkage (especially at high temperatures), and good mold flow in thin sections (e.g., thin wall capability).
- interposer 120 can be used to electrically couple
- MEMS device 105 and/or electrical component 106 to ground, power, or an electrical signal.
- MEMS device 105 and electrical component 106 can be located over interposer 120.
- MEMS device 105 and/or electrical component 106 can be electrically coupled to interposer 120.
- interposer 120 can be electrically coupled to leadframe 132 using wires 144 and thus, electrically coupling MEMS device 105 and/or electrical component 106 to leadframe 132.
- interposer 120 has an aperture 142, which interconnects back chamber 108 and interior cavity 107.
- MEMS device 105 is at least partially located over aperture 142.
- MEMS device 105 can have an opening 143 between interior cavity 107 to aperture 142.
- aperture 142 and opening 143 can each have a diameter of 0.50 mm.
- aperture 142 and opening 143 can have different sizes.
- MEMS device 105 can have a membrane 139 in opening 143. In the illustrated example, membrane 139 is located at the top side of MEMS device 105 and opening 143 opens into aperture 142.
- interposer 120 can be a piece of metal.
- interposer 120 can be copper alloy or stainless steel (e.g., stainless steel 304). In various examples, interposer 120 is thin, and thus, the strength of steel makes it preferable over other metals because it does not sag into back chamber 108. In other examples, interposer 120 can be made from plastic and coated with a metal (e.g., copper or gold). In other examples, interposer 120 can be a printed circuit board or a flex circuit (e.g. Kapton® circuit). [0056] As illustrated FIG. 10, in many embodiments, interposer 120 can have a substantially rectangular body 1048 with two wire bonding regions 1049 protruding therefrom.
- Wire 144 can be coupled to interposer 120 at one of wire bonding regions 1049, as illustrated in FIG. 14.
- interposer 120 can have different shapes such as a circle, a square, an irregular shape, or a combination thereof.
- interposer 120 can have none, one, or three or more wire bonding regions.
- lid 1 10 can be coupled to base 130 such that interior cavity 107 exists between lid 110 and base 130.
- MEMS device 105 and electrical component 106 can be located in interior cavity 107.
- Lid 1 10 and base 130 can be coupled using both non-electrically conductive epoxy or the equivalent, and solder or conductive epoxy, to provide the electrical interconnects needed to electrically couple (and ground) lid 110 to leadframe 132.
- lid 110 is electrically coupled to leadframe 132 using mounting pads 134.
- lid 1 10 can have a port hole or an acoustic hole 140.
- Acoustic hole 140 can be included in lid 110 because many MEMS devices need a path to received sound, air pressure, external fluids, airborne chemicals, etc.
- acoustic hole 140 can include a coating to prevent environmental hazards like particles, dust, corrosive gases, and humidity from entering internal cavity 107.
- acoustic hole 140 is located in the top of lid 110. In other embodiments, acoustic hole 140 can be located in the sides of lid 110 or base 130.
- lid 110 can be metal.
- the metal lid can be used for radio frequency shielding.
- lid 110 can include steel, a copper alloy, an aluminum alloy, an iron alloy with solderable metal finish, a plastic (e.g., LCP) with a metal coating (e.g. formed by electroless plating or painting), or a conductive composite (e.g., formed by transfer or injection molding).
- LCP plastic
- a metal lid can be used because a metal lid can provide greater electromagnetic shielding.
- LCP with a metal coating can be used because the metal coating can be used as an electrical or signal interconnection.
- FIG. 4 illustrates a flow chart for an embodiment of a method 400 of manufacturing a semiconductor package, according to the first embodiment.
- Method 400 is merely exemplary and is not limited to the embodiments presented herein. Method 400 can be employed in many different embodiments or examples not specifically depicted or described herein
- method 400 includes an activity 451 of providing a leadframe.
- FIG. 5 illustrates a top, front, left isometric view of an example of a semiconductor package after the providing leadframe 132, according to the first embodiment.
- Leadframe 132 may be formed by cutting, stamping or etching sheet stock into a strip or array format.
- the sheet stock from which leadframe 132 is formed can be a conductive metal like copper or aluminum, although other metals or alloys can be used.
- FIG. 5 illustrates an example where leadframe 132 include four separate electrical leads 581, 582, 583, and 584.
- the leadframe can be similar or identical to leadframe 2032 or 2732 of FIGs. 20 and 27, respectively.
- activity 451 can include cleaning the leadframe.
- leadframe 132 can be cleaned using a plasma cleaning process to remove oxides and other contaminants from surfaces of the leadframe before proceeding with method 400.
- activity 452 can include an activity 452 of providing a non-electrically conductive material around the leadframe to form a base.
- FIG. 6 illustrates a top, front, left isometric view of an example of semiconductor package 100 after providing non-electrically conductive material 13 1 around leadframe 132, according to the first embodiment.
- FIG. 7 illustrates a cross-sectional view of semiconductor package 100 along the VII- VII line (FIG. 6) after providing non-electrically conductive material 131 around leadframe 132, according to the first embodiment.
- non-electrically conductive material 131 can have interior cavity 107 with shelf 137 and one or more aperture 736, 638, and 641.
- the base formed by activity 452 can be similar or identical to base 130, 1730, or 1830 of FIGs. 1, 17 and 18, respectively.
- providing a non-electrically conductive material around the leadframe can include molding a plastic around the leadframe.
- a transfer or injection molding process can be used.
- the non-electrically conductive material can be LCP plastic, PEEK plastic, ABS plastic, PCV plastic, PCB plastic, an epoxy resin, BT laminate, an organic laminate, or the equivalent.
- method 400 further includes an activity 453 of providing attachment material to form one or more mounting pads.
- FIG. 8 illustrates a top, front, left isometric view of an example of semiconductor package 100 after providing attachment material to form mounting pads 133 and 134, according to the first embodiment.
- FIG. 9 illustrates a cross-sectional view of semiconductor package 100 along the IX-IX line (FIG. 8) after providing attachment material to form mounting pads 133 and 134, according to the first embodiment. Referencing FIG. 8 and 9, a conductive material is applied to base 130 to create mounting pads 134 and 133. Mounting pads 134 will be coupled to lid 1 10 in activity 462 (FIG. 4). Mounting pads 133 can be used to couple semiconductor package 100 to a PCB by, for example, a SMT technique.
- the attachment material can be at least partially provided in apertures 641 and 736 (FIG. 7) to form mounting pads 134 and 133, respectively.
- mounting pads 133 can be formed by providing solder in aperture 736 by screen printing or solder bumping.
- Mounting pad 134 can be formed by providing solder or conductive epoxy (either by screen print, solder bumping, solder dispensing or conductive epoxy dispensing) in aperture 641.
- forming mounting pads 133 or 134 may not be necessary and at least a portion of activity 453 can be skipped.
- method 400 includes an activity 454 of providing an interposer.
- the interposer can be similar or identical to interposer 120, 1720, or 2420 of FIGs. 1, 17, and 24, respectively.
- FIG. 10 illustrates a top, front, left isometric view of an example of semiconductor package 100 after coupling interposer 120 to base 130, according to the first embodiment.
- FIG. 1 1 illustrates a cross-sectional view of semiconductor package 100 along the XI-XI line (FIG. 10) after coupling interposer 120 to base 130, according to the first embodiment.
- FIGs. 10 and 1 when interposer 120 is coupled to base 130, back chamber 108 is formed with interposer 120 being a top of back chamber 108.
- interposer 120 can be coupled to non-electrically conductive material 131. Interposer 120 can rest on shelf 137 and be mechanically coupled to non-electrically conductive material 131 using an adhesive (not shown). In some examples, interposer 120 can be coupled to non-electrically conductive material 131 using adhesive film (e.g. B-stageable adhesive film), conductive epoxy and/or non-conductive epoxy
- interposer 120 can be attached to an electrically conductive portion of base 130.
- shelf 137 FIG. 1
- an electrically conductive adhesive can be used to electrically and mechanically couple interposer 1720 to electrically conductive shelf 1737.
- coupling interposer 1720 to base 1730 creates an electrical connection between interposer 1720 and base 1730, and wire bonds are not necessary to electrically couple interposer 1720 to leadframe 1732.
- method 400 continues with an activity 456 of curing the adhesive coupling the base to the interposer.
- the adhesive applied in activity 455 needs to be cured.
- the adhesive applied in activity 455 needs to be cured.
- it can be cured for approximately 60 minutes at approximately 175 degrees Celsius (°C).
- other curing profiles can be used to assure a complete curing of the adhesive.
- activity 456 can be omitted if the base and interposer are coupled to the interposer using a method that does not require curing.
- method 400 includes an activity 457 of providing at least one MEMS device and/or at least one electrical component.
- the at least one MEMS device and the at least one electrical component can be similar or identical to MEMS device 105 and electrical component 106 of FIG. 1.
- Method 400 continues with an activity 458 of coupling the at least one
- FIG. 12 illustrates a top, front, left isometric view of an example of semiconductor package 100 after coupling MEMS device 105 and electrical component 106 to interposer 120, according to the first embodiment.
- FIG. 13 illustrates a cross-sectional view of semiconductor package 100 along the XIII-XIII line (FIG. 12) after coupling MEMS device 105 and electrical component 106 to interposer 120, according to the first embodiment.
- MEMS device 105 and electrical component 106 can be coupled to interposer 120 using an epoxy. In some examples, MEMS device 105 and electrical component 106 can be pick-and-placed onto interposer 120.
- MEMS device 105 and electrical component 106 are coupled to interposer 120 using a die attach epoxy.
- MEMS device 105 and electrical component 106 are coupled to interposer 120 using a die attach epoxy.
- FIGs. 1 and 12-15 one MEMS device and one electrical component are shown, but more than one MEMS device and more than one electrical component can be present.
- method 400 continues with an activity 459 of curing the adhesive used to couple the MEMS device and/or the electrical component to the interposer.
- the adhesive applied in activity 458 needs to be cured.
- the adhesive can be cured for approximately 60 minutes at approximately 175 degrees Celsius (°C).
- other curing profiles can be used to assure a complete curing of the adhesive.
- activity 459 can be omitted if the MEMS device and electrical component are coupled to the interposer using a method that does not require curing.
- Method 400 continues with an activity 460 of wire bonding the interposer, the at least one MEMS device, the at least one electrical component, and the leadframe.
- FIG. 14 illustrates a top, front, left isometric view of an example of semiconductor package 100 after wire bonding interposer 120, MEMS device 105, electrical component 106, and leadframe 132, according to the first embodiment.
- FIG. 15 illustrates a cross-sectional view of semiconductor package 100 along the XV-XV line (FIG. 14) after wire bonding interposer 120, MEMS device 105, electrical component 106, and leadframe 132, according to the first embodiment.
- MEMS device 105 is wire bonded to electrical component 106 using wires 145 and 146. Electrical component 106 is wire bonded to leadframe 132 using wires 144 and 147. Interposer 120 is wire bonded to leadframe 132 using wire 1448 (FIG. 14). In other examples, other combinations of wire bonding can be used. For example MEMS device 105 could be wire bonded to leadframe 132 or interposer 120. In a different embodiment, wire bending is not used and is replaced with solder balls, flip chip technologies, or the like. In the same or different embodiment, the interposer can be electrically coupled to the leadframe using a conductive adhesive.
- method 400 includes an activity 461 of providing a lid.
- the lid can be similar or identical to lid 1 10 of FIG. 1.
- lid 1 10 can be metal.
- lid 1 10 can include a copper alloy, an aluminum alloy, an iron alloy with solderable metal finish, a plastic with a metal finish (e.g. formed by electroless plating or painting), or a conductive composite (e.g., formed by transfer or injection molding).
- ends of lid 110 can be coated with solder flux by reflowing mounting pads 133, which have been previously formed on base 130.
- lid 1 10 can be coupled to base 130 using a conductive adhesive and/or non-electrically conductive adhesive.
- activity 463 of curing the adhesive coupling the lid and the base.
- the adhesive applied in activity 462 needs to be cured. For example, when epoxy is used, it can be cured for approximately 60 minutes at approximately 175 degrees Celsius (°C). In further examples, other curing profiles can be used to assure a complete curing of the adhesive. In still other embodiments, if the lid and the base are coupled using a method that does not require curing, activity 463 can be omitted.
- Method 400 continues with an activity 464 of singulating the semiconductor packages.
- semiconductor package 100 is manufactured as a part of a set of two or more semiconductor packages. The two or more semiconductor packages are coupled together when the leadframe is provided in activity 451. In activity 464, the leadframes of the two or more semiconductor devices are separated from one another.
- the semiconductor packages can be singulated using a trim and saw method. In other examples, the semiconductor packages can be singulated using a punch and saw method.
- Method 400 continues with an activity 465 of baking the semiconductor package.
- semiconductor package 100 can be baked for approximately 240 minutes at approximately 125°C to remove moisture.
- Other baking process can be used depending on the requirements of the final product.
- FIG. 17 illustrates a cross-sectional view of semiconductor package 1700, according to a second embodiment.
- an air cavity packaging or semiconductor package 1700 can be configured to electrically couple to a printed circuit board (PCB) (not shown).
- PCB printed circuit board
- Semiconductor package 1700 can include: (a) a base 1730 with a back chamber 1708; (b) lid 110 coupled to base 1730; (c) an interposer 1720; (d) at least one MEMS device 105; (d) at least one electrical component 106; and (e) one or more wires 145 and 146.
- base 1730 can include: (a) leadframe 1732 with one or more electrical leads; and (b) non-electrically conductive material 1731.
- one or more of the electrical leads include: (a) a main body 1781 ; and (b) an arm 1782.
- arm 1782 can be mechanically and electrically coupled to interposer 120.
- arm 1782 of leadframe 1732 can be coupled to interposer 120 using a conductive adhesive.
- arm 1782 can form electrically conductive shelf 1737 on which interposer 120 rests and is coupled.
- One or more of the electrical leads can be electrically coupled to MEMS device 105 and electrical component 106 through interposer 120.
- FIG. 18 illustrates a top view of a base
- FIG. 19 illustrates a bottom view of base 1830 of semiconductor package 1800, according to the third embodiment.
- FIG. 20 illustrates a side view of base 1830 of semiconductor package 1800, according to the third embodiment.
- FIG. 21 illustrates a cross-sectional view of base 1830 of semiconductor package 1800 along the XXI-XXI line (FIG. 18), according to the third embodiment.
- FIG. 22 illustrates a cross-sectional view of base 1830 of semiconductor package 1800 along the XXII- XXII line (FIG. 18), according to the third embodiment.
- FIG. 23 illustrates a front view of base 1830 of semiconductor package 1800, according to the third embodiment.
- FIG. 19 illustrates a bottom view of base 1830 of semiconductor package 1800, according to the third embodiment.
- FIG. 20 illustrates a side view of base 1830 of semiconductor package 1800, according to the third embodiment.
- FIG. 21 illustrates a cross-sectional view of base 1830 of semiconductor package 1800 along the XXI-XXI line
- FIG. 24 illustrates a top view of an interposer 2420 of semiconductor package 1800, according to the third embodiment.
- Semiconductor package 1800 is merely exemplary and is not limited to the embodiments presented herein. Semiconductor package 1800 can be employed in many different embodiments or examples not specifically depicted or described herein. [0086] In some embodiments, an air cavity packaging or semiconductor package
- Semiconductor package 1800 can be configured to electrically couple to a printed circuit board (PCB) (not shown).
- Semiconductor package 1800 can include: (a) a lid (not shown); (b) a base 1830 with a back chamber (not shown) and coupled to the lid; (c) an interposer 2420 (FIG. 24); (d) at least one micro-electro-mechanical system (MEMS) device (not shown); (d) at least one electrical component (not shown); and (e) one or more wires (not shown).
- base 1830 can include: (a) leadframe 2032 (FIG. 20); and (b) non-electrically conductive material 1831. In some examples, non-electrically conductive material 1831 can be located around leadframe 2032.
- non-electrically conductive material can have a cavity 1839 with a bottom 1825 and a shelf 1837.
- Shelf 1837 can be configured such that interposer 2420 (FIG. 24) can rest and be coupled to shelf 1837.
- interposer 2420 When interposer 2420 is coupled to shelf 1837, non-electrically conductive material 1831 and interposer 2420 form a back chamber there between.
- the front half of base 1830 can be symmetric with the back half of base 1830.
- the left half of base 1830 can be symmetric with the right half of base 1830.
- base 1830 can have a length 1894 of approximately 3.76 mm, a width 1899 of approximately 4.72 mm, and a thickness 2071 (FIG. 20) of approximately 0.40 mm.
- Leadframe 2032 can have a thickness 2372 (FIG. 23) of approximately 0.13 mm.
- mounting pads 1841 can have a diameter 2173 of approximately 0.25 mm and be offset from the side edge of base 1830 by a distance 1887 of approximately 0.20 mm and offset from the front or back edge of base 1830 by a distance 1888 of approximately 0.20 mm.
- mounting pads 1838 can have a diameter of approximately 0.25 mm and be offset from the side edge of base 1830 by a distance 1879 of approximately 0.65 mm and offset from the front or back edge of base 1830 by a distance 1889 of approximately 0.65 mm.
- cavity 1839 can have a depth 2271 of approximately
- shelf 1837 can have a depth 2275 of approximately 0.10 mm.
- cavity 1839 including shelf 1837 can have a maximum outer width 1898 of approximately 3.80 mm and a maximum outer length 1893 of approximately 3.04 mm.
- Cavity 1839 without shelf 1837 can have a maximum outer width 1897 of approximately 2.40 mm and a maximum outer length 1892 of approximately 2.64 mm.
- cavity 1839 including shelf 1837 can have a minimum outer width 1896 of approximately 2.12 mm and a minimum outer length 1891 of approximately 1.16 mm. Cavity 1839 without shelf 1837 can have a minimum outer width 1895 of approximately 1.72 mm and a minimum outer length 1890 of approximately 0.74 mm.
- mounting pads 1933 can have a diameter 1987 of approximately 0.9 mm and be offset from the side edge of base 1830 by a distance 1985 of approximately 0.20 mm and offset from the front or back edge of base 1830 by a distance 1984 of approximately 0.20 mm.
- the distance 1983 between the front mounting pads 1933 and the back mounting pads 1933 is approximately 1.56 mm.
- the distance 1981 between the left mounting pads 1933 and the right mounting pads 1933 can be approximately 2.52 mm.
- interposer 2420 can have an aperture 2442 and wire bonding regions 2448 and 2449.
- Wire bonding regions 2448 and 2449 can have wire bonding pads 2468 and 2467, respectively and be plated with gold (Au), silver (Ag), copper (CU), or i Pd/Au where i is nickel and Pd is lead.
- Interposer 2420 can have thickness of approximately 0.065 mm and a maximum outer width 2461 of approximately 3.60 mm and a maximum outer length 2464 of approximately 2.84 mm.
- Aperture 2442 can have a diameter of approximately 0.50 mm.
- Wire bonding pads 2467 can have a width 2465 of approximately 0.37 mm and a length 2466 of approximately 0.46 mm.
- Wire bonding pads 2468 can have a width 2462 of approximately 1.62 mm and a length 2469 of approximately 0.40 mm.
- Wire bonding regions 2449 can have a length 2463 of approximately 0.96 mm.
- Wire bonding regions 2448 can a width 2462 of approximately 1.92 mm.
- FIG. 25 illustrates a top view of a base 2530 of a semiconductor package 2500, according to a fourth embodiment.
- FIG. 26 illustrates a top view of an interposer 2620 of semiconductor package 2500, according to the fourth embodiment.
- Semiconductor package 2500 is merely exemplary and is not limited to the embodiments presented herein. Semiconductor package 2500 can be employed in many different embodiments or examples not specifically depicted or described herein.
- Semiconductor package 2500 can be configured to electrically couple to a printed circuit board (PCB) (not shown).
- Semiconductor package 2500 can include: (a) a lid (not shown); (b) a base 2530 with a back chamber (not shown) and coupled to the lid; (c) an interposer 2620 (FIG. 26); (d) at least one micro-electro-mechanical system (MEMS) device (not shown); (d) at least one electrical component (not shown); and (e) one or more wires (not shown).
- base 2530 can include: (a) leadframe (not shown); and
- non-electrically conductive material 2531 can have a cavity 2539 with a bottom 2525 and a shelf 2537. Shelf 2537 can be configured such that interposer 2620 (FIG. 26) can rest and be coupled to shelf 2537. When interposer 2620 is coupled to shelf 2537, non-electrically conductive material 2531 and interposer 2620 form a back chamber there between.
- the front half of base 2530 can be symmetric with the back half of base 2530.
- the left half of base 2530 can be symmetric with the right half of base 2530.
- base 2530 can have a length 2594 of approximately 3.76 mm, a width 2599 of approximately 4.72 mm, and a thickness of approximately 0.40 mm.
- mounting pads 1841 can have a diameter of approximately 0.25 mm and be offset from the side edge of base 2530 by a distance 2587 of approximately 0.20 mm and offset from the front or back edge of base 2530 by a distance 2588 of approximately 0.20 mm.
- mounting pads 1838 can have a diameter of approximately 0.25 mm and be offset from the side edge of base 2530 by a distance 2579 of approximately 0.65 mm and offset from the front or back edge of base 2530 by a distance 2589 of approximately 0.65 mm.
- Cavity 2539 can have a depth of approximately 0.20 mm and shelf 2537 can have a depth of approximately 0.10 mm.
- Cavity 2539 including shelf 2537 (without cutouts 2549) can have a maximum outer width 2598 of approximately 2.50 mm and a maximum outer length 2593 of approximately 1.80 mm.
- Cavity 2539 without shelf 2537 can have a maximum outer width 2597 of approximately 2.20 mm and a maximum outer length 2592 of approximately 1.50 mm.
- Cutouts 2549 can have a length 2590 of approximately 0.45 mm and a width 2595 of approximately 0.25 mm.
- interposer 2620 can have an aperture 2642 and wire bonding regions 2648.
- Interposer 2460 can have thickness of approximately 0.08 mm and a maximum outer width 2661 of approximately 2.35 mm and a maximum outer length 2664 of approximately 1.65 mm.
- Aperture 2642 can have a diameter of approximately 0.50 mm.
- Wire bonding regions 2648 can have a width 2662 of approximately 0.30 mm and a length 2669 of approximately 0.25 mm.
- Wire bonding regions 2648 can be offset from the left and right sides of interposer 2620 by a distance 2666 of approximately 1.03 mm
- FIG. 27 illustrates a cross-sectional view of an example of a semiconductor package 2700, according to a fifth embodiment.
- Semiconductor package 2700 is merely exemplary and is not limited to the embodiments presented herein. Semiconductor package 2700 can be employed in many different embodiments or examples not specifically depicted or described herein.
- an air cavity package or semiconductor package 2700 can be configured to electrically couple to a printed circuit board (PCB) (not shown).
- Semiconductor package 2700 can include: (a) a lid 110; (b) a base 2730; (c) an interposer 120; (d) at least one MEMS device 105; (d) at least one electrical component 106; and (e) one or more wires 144, 145, 146, 147.
- Interposer 120 can be a separate or non-integrally formed element from base 2730.
- base 2730 can include: (a) leadframe 2732; (b) non- electrically conductive material 2731 with apertures 638 and 641 ; and (c) mounting pads 134 located at least partially in apertures 641.
- a bottom 2779 of leadframe 2732 is substantial even or planar with a bottom 2778 of non-electrically conductive material 2731.
- mounting pad 133 (FIG. 1) is unnecessary.
- Leadframe 2732 can be couple semiconductor package 100 to a PCB (not shown) by, for example, surface mount adhesive techniques (SMT), solder balls, or flip chip techniques.
- a feature described to have a diameter may or may not be a circle.
- All elements claimed in any particular claim are essential to the embodiment claimed in that particular claim. Consequently, replacement of one or more claimed elements constitutes reconstruction and not repair. Additionally, benefits, other advantages, and solutions to problems have been described with regard to specific embodiments. The benefits, advantages, solutions to problems, and any element or elements that may cause any benefit, advantage, or solution to occur or become more pronounced, however, are not to be construed as critical, required, or essential features or elements of any or all of the claims.
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Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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US13/581,270 US8809974B2 (en) | 2010-02-26 | 2010-02-26 | Semiconductor package for MEMS device and method of manufacturing same |
PCT/CN2010/070775 WO2011103720A1 (fr) | 2010-02-26 | 2010-02-26 | Boîtier de semi-conducteur pour dispositif mems et son procédé de fabrication |
KR1020127025182A KR101443477B1 (ko) | 2010-02-26 | 2010-02-26 | Mems 장치용 반도체 패키지 및 그 제조 방법 |
CN201080066467.6A CN102859688B (zh) | 2010-02-26 | 2010-02-26 | 用于微机电系统器件的半导体封装体及其制造方法 |
HK13103697.5A HK1176743A1 (en) | 2010-02-26 | 2013-03-25 | Semiconductor package for mems device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2010/070775 WO2011103720A1 (fr) | 2010-02-26 | 2010-02-26 | Boîtier de semi-conducteur pour dispositif mems et son procédé de fabrication |
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WO2011103720A1 true WO2011103720A1 (fr) | 2011-09-01 |
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ID=44506126
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PCT/CN2010/070775 WO2011103720A1 (fr) | 2010-02-26 | 2010-02-26 | Boîtier de semi-conducteur pour dispositif mems et son procédé de fabrication |
Country Status (5)
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US (1) | US8809974B2 (fr) |
KR (1) | KR101443477B1 (fr) |
CN (1) | CN102859688B (fr) |
HK (1) | HK1176743A1 (fr) |
WO (1) | WO2011103720A1 (fr) |
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Also Published As
Publication number | Publication date |
---|---|
CN102859688B (zh) | 2015-05-27 |
HK1176743A1 (en) | 2013-08-02 |
CN102859688A (zh) | 2013-01-02 |
US8809974B2 (en) | 2014-08-19 |
KR101443477B1 (ko) | 2014-09-22 |
US20120319256A1 (en) | 2012-12-20 |
KR20130027475A (ko) | 2013-03-15 |
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