WO2011096512A1 - 半導体発光装置、半導体発光装置の製造方法および光装置 - Google Patents
半導体発光装置、半導体発光装置の製造方法および光装置 Download PDFInfo
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- WO2011096512A1 WO2011096512A1 PCT/JP2011/052356 JP2011052356W WO2011096512A1 WO 2011096512 A1 WO2011096512 A1 WO 2011096512A1 JP 2011052356 W JP2011052356 W JP 2011052356W WO 2011096512 A1 WO2011096512 A1 WO 2011096512A1
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- semiconductor light
- light emitting
- semiconductor laser
- base portion
- cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02235—Getter material for absorbing contamination
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/0222—Gas-filled housings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
Definitions
- the present invention relates to a semiconductor light emitting device, a method for manufacturing a semiconductor light emitting device, and an optical device, and more particularly, a semiconductor light emitting device including a base portion to which a semiconductor light emitting element is attached and a cap portion covering the semiconductor light emitting element.
- the present invention relates to a manufacturing method and an optical device.
- semiconductor light emitting devices are widely used as light sources for optical disk systems, optical communication systems, and the like.
- an infrared semiconductor laser element that emits a laser beam of about 780 nm has been put into practical use as a light source for reproducing a CD.
- a red semiconductor laser element that emits a laser beam having a wavelength of about 650 nm has been put to practical use as a light source for DVD recording / reproduction.
- a blue-violet semiconductor laser element that emits a laser beam of about 405 nm has been put into practical use as a light source for a Blu-ray disc.
- a semiconductor light emitting device including a package having a base portion to which a semiconductor light emitting element is attached and a cap portion covering the semiconductor light emitting element is conventionally known.
- a semiconductor light emitting device including a package having a base portion to which a semiconductor light emitting element is attached and a cap portion covering the semiconductor light emitting element is conventionally known.
- JP-A-9-205251 JP-A-9-205251.
- Japanese Patent Laid-Open No. 9-205251 discloses a header (base portion) made of a resin molded product having a flange surface, and an Si submount (base) on an element installation portion formed integrally with the header.
- a semiconductor laser plastic molding apparatus including a semiconductor laser element attached in this manner and a resin-made transparent cap covering the periphery of the semiconductor laser element is disclosed.
- the open end of the transparent cap is joined to the flange surface of the header via an adhesive containing an epoxy-based material, thereby allowing the semiconductor
- the laser element is hermetically sealed in a package surrounded by a header and a transparent cap.
- the header and the transparent cap are formed of a resin material. Therefore, when volatile organic gas is generated from the resin material, the organic gas Is considered to fill the package. In addition, since an epoxy-based adhesive is used for joining the header and the transparent cap, it is considered that a large amount of organic gas is generated from this adhesive.
- the blue-violet semiconductor laser element is operated with a large amount of organic gas filled in the package, the organic gas is excited by the laser beam emitted from the laser emission end face and decomposed in the vicinity of the laser emission end face. As a result, there is a risk that deposits may be formed on the laser emission end face. In this case, the adhering material absorbs the laser beam and causes a rise in the temperature of the laser emission end face, which disadvantageously degrades the laser element.
- the present invention has been made to solve the above-described problems, and one object of the present invention is to suppress the deterioration of the semiconductor light emitting element and to increase the size of the package. It is an object to provide a semiconductor light-emitting device, a method for manufacturing the semiconductor light-emitting device, and an optical device that can suppress the above.
- a semiconductor light emitting device includes a semiconductor light emitting element and a package for sealing the semiconductor light emitting element.
- the package is attached to the base part to which the semiconductor light emitting element is attached.
- a cap portion that covers the light emitting element, and at least one of the base portion and the cap portion is formed of a mixture of a resin and a gas absorbent.
- At least one of the base portion and the cap portion is formed of a mixture of a resin and a gas absorbent. Even when a resin is used as at least one of the constituent materials, the volatile organic gas generated from the resin can be absorbed by the gas absorbent mixed in the resin. As a result, it is possible to suppress the organic gas from being filled in the package for sealing the semiconductor light emitting device, so that it is excited or decomposed by the light emitted from the semiconductor light emitting device and is solid on the light emitting end face of the semiconductor light emitting device. It can suppress that it forms as a deposit
- the gas absorbent is mixed in at least one of the base part and the cap part, it is not necessary to separately install a member containing the gas absorbent in the package. Thereby, since it is not necessary to enlarge the internal volume of a package, it can suppress that the size of a package becomes large.
- the cap portion is formed of a mixture, has a light transmitting portion through which light emitted from the semiconductor light emitting element is transmitted outward, and the resin is light transmitting
- the gas absorbent is mixed in the mixture constituting the cap part other than the light transmission part. If comprised in this way, since the cap part which has a light transmissive part can be formed using the same resin which has translucency, while being able to manufacture a cap part easily, the structure of a cap part Can be simplified. Further, since the gas absorbent is mixed in the resin constituting the cap part other than the light transmission part, light absorption or light scattering by the gas absorbent does not occur in the light transmission part. Thereby, it is possible to reliably emit the emitted light from the light transmitting portion, and it is possible to suppress the organic gas generated from the resin of the cap portion including the light transmitting portion from being filled in the package.
- the gas absorbent is at least one of synthetic zeolite, silica gel, and activated carbon. If comprised in this way, while being able to fully absorb the organic gas emitted from resin, at least any one of a base part and a cap part is easily formed with the mixture of resin and the gas absorbent which consists of said material. can do.
- a gas barrier layer is formed on the surface of at least one of the base portion and the cap portion formed of the mixture.
- the gas barrier layer means a layer made of a material having a lower gas permeability than the resin constituting the base portion and the cap portion.
- the semiconductor light emitting device is integrally formed with a plurality of lead terminals attached to the base portion and arranged on the same plane, and an element installation portion on which the semiconductor light emitting element is placed.
- the heat dissipating part is further provided, and the heat dissipating part is disposed outside the plurality of lead terminals. That is, in the direction parallel to the plane in which the plurality of lead terminals are arranged, the lead terminal located on the outermost side of the plurality of lead terminals is sandwiched between the heat radiating portion and the other lead terminals.
- the heat radiating portion is not disposed between the plurality of lead terminals.
- fever from a semiconductor light-emitting element in the limited space between a 1st lead terminal and a 2nd lead terminal, the surface area of a thermal radiation part is reduced. Can be bigger. Thereby, the thermal radiation characteristic in a thermal radiation part can be improved.
- the heat radiating part is arranged on the same plane. If comprised in this way, each lead terminal and a thermal radiation part can be easily formed with a lead frame etc., for example. Furthermore, when this semiconductor light emitting device is attached to a housing such as an optical pickup device, for example, the heat radiating portion and the housing can be easily fixed, so that the heat generated by the semiconductor light emitting element can be easily generated in the housing. Can dissipate heat.
- the heat dissipating part and the element installation part are connected by a connecting part extending from the front side to the rear side of the base part, and the connection region between the heat dissipating part and the connecting part is: It is arranged on the rear surface side of the base part. If comprised in this way, since heat dissipation area can fully be ensured, the heat
- connection region is disposed on the rear surface side of the base portion, preferably, at least a part of the connection region is exposed from the rear surface of the base portion. If comprised in this way, since a thermal radiation part can be easily exposed to the exterior of a base part, the thermal radiation characteristic in a thermal radiation part can be improved.
- the heat radiating portion is preferably disposed outside the cap portion. If comprised in this way, a semiconductor laser element can be sealed easily in the state which maintained heat dissipation.
- the heat radiating portion is disposed outside the plurality of lead terminals on at least one side of both sides of the base portion. That is, the heat radiating part is sandwiched between the one side surface of the base part and the lead terminal located on the outermost side of the plurality of lead terminals, and the heat radiating part is disposed between the plurality of lead terminals. Not placed. If comprised in this way, even if it has a heat radiating part only in one side of a base part, the heat which a semiconductor light emitting element emits can be radiated to the exterior from a heat radiating part via a connecting part. Thereby, the width
- the lead terminal preferably includes a first lead terminal attached to the rear surface of the base portion, and the element installation portion is formed integrally with the first lead terminal. If comprised in this way, the role of a thermal radiation function can be combined also with a 1st lead terminal. Thereby, the heat dissipation of the semiconductor laser device can be further improved.
- the lead terminal preferably includes a second lead terminal attached to the rear surface of the base portion, and the element installation portion and the second lead terminal are arranged on different planes. . If comprised in this way, the number of lead terminals can be increased easily, without reducing the width
- At least a part of the connecting part and the heat dissipating part are bent. If comprised in this way, the surface area of a thermal radiation part can be enlarged further. Thereby, since the heat radiating part can be extended and arranged also in the bent direction, the heat radiating characteristics can be further improved.
- At least a part of the connecting portion and the heat radiating portion are bent in a direction parallel to the rear surface of the base portion.
- the width of the heat radiating portion is larger than the width of the lead terminal. If comprised in this way, the heat
- the resin has stretchability, and the semiconductor light emitting element is sealed by fitting the base portion and the cap portion. If comprised in this way, since a base part and a cap part can be stuck closely, the inside of a package can be sealed easily. That is, since it is not necessary to further use an adhesive or the like for performing sealing, generation of organic gas can be suppressed.
- the base portion and the cap portion are both formed of a mixture of a resin and a gas absorbent, and the gas mixed in the resin constituting the cap portion.
- the ratio of the absorbent to the resin is smaller than the ratio of the gas absorbent mixed in the resin constituting the base portion to the resin. If comprised in this way, since the elasticity by the resin in a cap part can be maintained easily, a base part and a cap part can be made to fit reliably.
- the base portion has an outer peripheral surface that tapers from the rear surface side to the front surface side of the base portion
- the cap portion has an outer periphery that tapers the base portion. Mates to the surface. If comprised in this way, it will become easier to fit a cap part with respect to the outer peripheral surface of a base part.
- the cap portion fits while expanding and contracting in accordance with the tapered shape of the outer peripheral surface. Thereby, the inside of the package in which the semiconductor light emitting element is placed can be hermetically sealed more reliably.
- a method for manufacturing a semiconductor light emitting device includes a step of forming a base portion and a cap portion, a step of attaching a semiconductor light emitting element to the base portion, and fitting the base portion and the cap portion.
- the step of forming the base portion and the cap portion is formed by molding a mixture of a resin and a gas absorbent, at least one of the base portion and the cap portion. The process of carrying out is included.
- At least one of the base portion and the cap portion is formed by molding a mixture of a resin and a gas absorbent. Even when a resin is used as a constituent material of at least one of the base part and the cap part, the volatile organic gas generated from the resin is absorbed by the gas absorbent mixed in the resin. Can do. As a result, it is possible to suppress the organic gas from being filled in the package for sealing the semiconductor light emitting device, so that it is excited or decomposed by the light emitted from the semiconductor light emitting device and is solid on the light emitting end face of the semiconductor light emitting device. It can suppress that it forms as a deposit
- the gas absorbent is mixed in at least one of the base part and the cap part, it is not necessary to separately install a member containing the gas absorbent in the package. Thereby, since it is not necessary to enlarge the internal volume of a package, it can suppress that the size of a package becomes large.
- the base portion and the cap portion are both formed of a mixture of a resin and a gas absorbent, and the gas mixed in the resin constituting the cap portion.
- the ratio of the absorbent to the resin is smaller than the ratio of the gas absorbent mixed in the resin constituting the base portion to the resin.
- An optical device includes a semiconductor light emitting device including a semiconductor light emitting element, a package for sealing the semiconductor light emitting element, and an optical system for controlling light emitted from the semiconductor light emitting device. And a base part to which the semiconductor light emitting element is attached, and a cap part that is attached to the base part and covers the semiconductor light emitting element, and at least one of the base part and the cap part is made of a mixture of a resin and a gas absorbent. Is formed.
- At least one of the base portion and the cap portion is formed of a mixture of a resin and a gas absorbent, thereby at least the base portion and the cap portion.
- a resin is used as one of the constituent materials, volatile organic gas generated from the resin can be absorbed by the gas absorbent mixed in the resin.
- the gas absorbent is mixed in at least one of the base part and the cap part, it is not necessary to separately install a member containing the gas absorbent in the package. Thereby, since it is not necessary to enlarge the internal volume of a package, it can suppress that the size of a package becomes large.
- 1 is a longitudinal sectional view along a center line in a width direction of a semiconductor laser device according to a first embodiment of the present invention. It is an expanded sectional view of the mixture of resin of this invention and a gas absorbent. 1 is a top view of a semiconductor laser device according to a first embodiment of the present invention. It is a front view when the semiconductor laser device by 1st Embodiment of this invention is seen from the emission direction of a laser beam in the state which removed the cap part. It is a top view for demonstrating the manufacturing process of the semiconductor laser apparatus by 1st Embodiment of this invention.
- the semiconductor laser device 100 is an example of the “semiconductor light emitting device” in the present invention.
- the semiconductor laser device 100 includes a blue-violet semiconductor laser element 20 having an oscillation wavelength of about 405 nm and a package 50 that seals the blue-violet semiconductor laser element 20.
- the package 50 includes a base portion 10 to which the blue-violet semiconductor laser element 20 is attached and a cap portion 30 attached to the base portion 10 and covering the blue-violet semiconductor laser element 20.
- the blue-violet semiconductor laser element 20 is an example of the “semiconductor light emitting element” in the present invention.
- the base portion 10 has a substantially cylindrical header portion 10a having an outer diameter D1, and a lower half (entire surface 10h) on the front side 10c of the header portion 10a is forward (laser). And a pedestal portion 10b extending in the light emitting direction (A1 direction).
- the base portion 10 is formed of a mixture of particulate gas absorbents 16 (synthetic zeolite) mixed in a predetermined ratio with respect to the epoxy resin 15.
- the gas absorbent 16 is present in a state where individual particles have a particle diameter of several tens of ⁇ m to several hundreds of ⁇ m.
- the particulate gas absorbent 16 has a role of absorbing volatile organic gas generated by the resin 15.
- the epoxy resin and the synthetic zeolite are examples of the “resin” and the “gas absorbent” in the present invention, respectively.
- lead terminals 11, 12 and 13 made of a metal lead frame having a width W5 penetrate from the front surface 10c side (A1 side) to the rear surface 10d side (A2 side) of the base portion 10 in a state of being insulated from each other.
- the lead terminal 11 penetrates substantially the center of the header portion 10a (front surface 10c) of the base portion 10.
- the lead terminals 12 and 13 are arranged on the same plane on the outer side (B2 side and B1 side) in the width direction (B direction) of the lead terminal 11, respectively.
- the lead terminals 11, 12 and 13 have rear end regions 11a, 12a and 13a extending rearward (A2 side), respectively.
- the rear end regions 11a, 12a and 13a are exposed from the rear surface 10d of the base portion 10.
- the lead terminal 11 is an example of the “first lead terminal” in the present invention.
- the lead terminals 11, 12 and 13 have front (A1 side) front end regions 11b, 12b and 13b, respectively.
- the front end regions 11b, 12b, and 13b are exposed from the front surface 10c of the header portion 10a and are disposed on the upper surface 10e of the pedestal portion 10b.
- the front end region 11b of the lead terminal 11 extends in the B direction on the front side of the front end regions 12b and 13b of the lead terminals 12 and 13 on the base portion 10b, and has a width W1 (W1 ⁇ D1).
- W1 width
- the blue-violet semiconductor laser element 20 is fixed substantially at the center of the front end region 11b.
- the front end region 11b is an example of the “element placement portion” in the present invention.
- the front end region 11 b of the lead terminal 11 is approximately on both sides in the B direction with respect to the lead terminal 11 (on the opposite side (outside) of the lead terminals 12 and 13 from the lead terminal 11).
- a pair of heat dissipating parts 11d arranged symmetrically is connected. More specifically, connection portions 11c extending rearward (A2 direction) from both ends in the width direction (B2 side and B1 side) of the front end region 11b of the lead terminal 11 are formed.
- the connection portion 11c has a width W2.
- the connection portion 11c extends rearward from the front end region 11b outside the lead terminals 12 and 13 (B2 side and B1 side) and penetrates from the front surface 10c of the base portion 10 to the rear surface 10d.
- the heat radiating portion 11d is connected to the rear end region 11h of the connecting portion 11c exposed from the rear surface 10d of the base portion 10.
- the rear end region 11h of the connection portion 11c is an example of the “connection region” in the present invention.
- the heat radiating portion 11d has a first heat radiating portion 11f having one end connected to the rear end region 11h of the connecting portion 11c and a second width W4 connected to the other end of the first heat radiating portion 11f. 11g of heat dissipation parts.
- the second heat radiating portion 11g is connected to the other end of the first heat radiating portion 11f.
- the direction is changed from front to front (A1 direction). Therefore, as shown in FIG. 4, the second heat radiating portion 11g extends substantially parallel to the outer peripheral surface 10f with a distance W6 from the outer peripheral surface 10f of the base portion 10. That is, the connection part 11c and the heat radiating part 11d have a substantially U shape when seen in a plan view, and are formed on the same plane as the upper surface 10e of the pedestal part 10b.
- width W2 of the connecting portion 11c and the width W4 of the second heat radiating portion 11g are both wider than the width W5 of the portion penetrating the base portion 10 of the lead terminal 11 (W2> W5 and W4> W5). Therefore, heat generated by the blue-violet semiconductor laser element 20 operating in the package 50 is radiated to the outside of the semiconductor laser device 100 through the submount 40, the front end region 11b, and the heat radiating portions 11d on both sides.
- the cap portion 30 is formed of a mixture of a gas absorbent made of synthetic zeolite and a silicon resin having translucency and stretchability.
- the side wall portion 30a is formed in a substantially cylindrical shape having a diameter D3, and the bottom surface portion 30b closes one side (A1 side) of the side wall portion 30a.
- Silicon resin is an example of the “resin” in the present invention.
- the side wall portion 30a has a thickness (wall thickness) t1 of about 0.5 mm.
- the bottom surface portion 30b has a thickness t2 (t2 ⁇ t1) slightly larger than the thickness t1.
- a light transmission part 35 through which the laser light emitted from the blue-violet semiconductor laser element 20 can be transmitted to the outside is formed at the center of the bottom part 30b having a substantially circular shape.
- the light transmission part 35 does not contain a gas absorbent, it has translucency, whereas the side wall part 30a and the bottom part 30b contain a gas absorbent and thus are transparent. Not light.
- the base portion 10 and the cap portion 30 are mixed with the particulate gas absorbent (synthetic zeolite) 16 at a predetermined ratio with respect to the resin (epoxy resin, silicon resin) 15. It is formed by a mixture.
- the gas absorbent 16 is present in a state where individual particles have a particle diameter of several tens of ⁇ m to several hundreds of ⁇ m.
- the particulate gas absorbent 16 has a role of absorbing volatile organic gas generated by the resin 15.
- the gas absorbent 16 is preferably mixed in a range of about 70 wt% to about 90 wt% with respect to the resin (epoxy resin) 15.
- the proportion of the epoxy resin in the base portion 10 is reduced and the amount of organic gas generated from the epoxy resin is suppressed, and at the same time, the gas absorbent in which the proportion in the base portion 10 is relatively increased.
- the gas absorbent 16 is preferably mixed in a range of about 40 wt% to about 70 wt% with respect to the resin (silicon resin) 15.
- the stretchability of the cap part 30 by the silicon resin can be maintained.
- the side wall portion 30a and the bottom surface portion 30b of the cap portion 30 are not light-transmitting because the gas absorbent is mixed therein, whereas the light transmitting portion 35 is light-transmitting because the gas absorbent is not mixed therein. have.
- a pad electrode 41 for die-bonding the blue-violet semiconductor laser element 20 and the monitor PD (photodiode) 42 is formed on the upper surface of the submount 40.
- the blue-violet semiconductor laser element 20 is bonded to a predetermined region on the upper surface in front of the pad electrode 41 (A1 side).
- a monitoring PD 42 is joined to a predetermined region on the upper surface behind (A2 side) the pad electrode 41.
- the submount 40 is bonded to the surface of the front end region 11b of the lead terminal 11 via the conductive adhesive layer 5 made of Au—Sn solder on the lower surface.
- the monitoring PD 42 has a p-type region 42b and an n-type region 42c, and the n-type region 42c side is joined to the submount 40.
- the laser light emitted to the light reflecting surface 20b side of the blue-violet semiconductor laser element 20 is incident on the upper surface (light receiving surface 42a) of the p-type region 42b of the monitoring PD 42.
- the light emitting surface 20a of the blue-violet semiconductor laser device 20 is flush with the A1 side end surface 40a of the submount 40, the front end region 11b of the lead terminal 11, and the front surface 10h of the base portion 10b of the base portion 10. Yes.
- the light emitting surface 20a and the light reflecting surface 20b have a magnitude relationship between the light intensities of the laser beams emitted from the respective end surfaces with respect to the pair of resonator end surfaces formed in the blue-violet semiconductor laser element 20. Differentiated. That is, the end surface with the relatively large light intensity of the emitted laser light is the light emitting surface 20a, and the end surface with the relatively small intensity is the light reflecting surface 20b.
- the blue-violet semiconductor laser device 20 has a resonator length (A direction) of about 250 ⁇ m or more and about 400 ⁇ m or less and an element width (B direction) of about 100 ⁇ m or more and about 200 ⁇ m or less. is doing.
- the blue-violet semiconductor laser device 20 has a thickness (maximum thickness) of about 100 ⁇ m.
- the blue-violet semiconductor laser device 20 includes an n-type cladding layer 22 made of Si-doped n-type AlGaN and a quantum well made of InGaN having a high In composition on the upper surface of an n-type GaN substrate 21.
- the p-type cladding layer 24 is formed with a ridge (projection) 25 having a width of about 1.5 ⁇ m extending along a direction perpendicular to the paper surface of FIG. 5 (direction A of FIG. 1).
- a waveguide structure is formed.
- a current blocking layer 26 made of SiO 2 is formed to cover the upper surface of the p-type cladding layer 24 other than the ridge 25 and both side surfaces of the ridge 25.
- a p-side electrode 27 made of Au or the like is formed on the ridge 25 of the p-type cladding layer 24 and the upper surface of the current blocking layer 26.
- an n-side electrode 28 in which an Al layer, a Pt layer, and an Au layer are stacked in this order from the side closer to the n-type GaN substrate 21 is formed in substantially the entire region on the lower surface of the n-type GaN substrate 21.
- a dielectric multilayer film having a low reflectance and a high reflectance is formed, respectively.
- the blue-violet semiconductor laser device 20 is sub-mounted by a junction-up method. 40 (see FIG. 5).
- the blue-violet semiconductor laser device 20 is connected to the front end face 12b of the lead terminal 12 through a metal wire 91 made of Au or the like wire-bonded to the p-side electrode 27.
- the monitoring PD 42 is connected to the front end face 13b of the lead terminal 13 through a metal wire 92 made of Au or the like wire-bonded to the p-type region 42b.
- Both the n-side electrode 28 of the blue-violet semiconductor laser device 20 and the n-type region 42 c of the monitoring PD 42 are electrically connected to the lead terminal 11 via the submount 40.
- the blue-violet semiconductor laser device placed on the pedestal portion 10 b by the side wall portion 30 a of the cap portion 30 being slid and fitted into the header portion 10 a from the A1 side toward the A2 side. 20 is hermetically sealed in the package 50.
- the inner diameter D2 (see FIG. 1) of the cap part 30 is smaller by about 1% than the outer diameter D1 (see FIG. 1) of the header part 10a. Is preferred.
- the inner surface 30c of the side wall portion 30a of the cap portion 30 can be fitted to the outer peripheral surface 10f of the base portion 10 in a state of being almost completely adhered.
- intersect is chamfered in the circumferential shape.
- the cap part 30 since the side wall part 30a of the cap part 30 is fitted so as to be inserted between the base part 10 and the heat radiation part 11d, the cap part 30 is fitted to the header part 10a (see FIG. 2). ), The heat dissipating part 11d of the lead terminal 11 is disposed outside the cap part 30 (side wall part 30a).
- a gas barrier layer 17 made of SiO 2 is continuously formed on the outer peripheral surface 10f of the base portion 10 and the rear surface 10d of the header portion 10a.
- a gas barrier layer 33 made of SiO 2 is continuously formed on the side wall portion 30a of the cap portion 30 and the outer surface 30d of the bottom surface portion 30b. That is, epoxy resin or silicon resin has high gas permeability because of its non-crystalline structure. Therefore, when the gas barrier layers 17 and 33 are not provided, the cap portion 30 is fitted to the header portion 10a to seal the package 50. Even if the operation is stopped, low molecular siloxane or volatile organic gas existing outside (in the atmosphere) of the semiconductor laser device 100 may permeate through the epoxy resin or silicon resin and enter the package 50.
- the gas barrier layers 17 and 33 can be provided to prevent the organic gas from entering from the outside.
- the gas barrier layers 17 and 33 may have a thickness of several tens of nm. Further, since the base portion 10 and the cap portion 30 contain a gas absorbent in the resin and the internal structure becomes a porous state, it is possible to provide the gas barrier layers 17 and 33 from the outside such as organic gas. It is very effective in blocking the intrusion of water.
- the gas barrier layer 33 formed on the outer surface 30 d of the cap part 30 is also formed on the outer surface of the light transmission part 35.
- the heat radiation portion 11 d and the connection portion 11 c are formed integrally with the front end region 11 b,
- Lead terminals 12 and 13 arranged on both sides of the lead terminal 11 form a lead frame 105 that is repeatedly patterned in the lateral direction (B direction).
- the lead terminals 12 and 13 are patterned in a state of being connected by the connecting portions 101 and 102 extending in the lateral direction (B direction).
- each of the heat dissipating parts 11d is patterned in a state of being connected by a connecting part 103 extending in the lateral direction.
- the base portion 10 for fixing the set of lead terminals 11 to 13 is molded.
- the lead terminals 11 to 13 pass through the base portion 10 and are fixed so that the front end regions 11b to 13b and the rear end regions 11a to 13a are exposed from the base portion 10.
- the base portion 10 is formed on the front end regions 11b to 13b side of the lead terminals 11 to 13, and includes the connection portion 11c. Further, on the lower side (C1 side in FIG. 2) of the front end regions 11b to 13b of the lead terminals 11 to 13, a pedestal portion 10b in which about half of the lower side of the front surface 10c of the base portion 10 extends forward is also formed.
- the gas barrier layer 17 (see FIG. 2) made of SiO 2 is formed on the outer peripheral surface 10f of the header portion 10a and the pedestal portion 10b of the base portion 10 and on the rear surface 10d of the header portion 10a by using a vacuum deposition method. Form.
- a mixture of an uncured silicone resin mixed with a silicone resin and a curing agent in a ratio of about 10 to 1 and a gas absorbent is poured into a mold (not shown) having a predetermined shape, and about 150 ° C.
- the composition is cured by heating for about 30 minutes under the following temperature conditions.
- the side wall part 30a of the cap part 30 and the bottom part 30b (refer FIG. 2) in which an opening part is formed in the approximate center part are shape
- the absorption capacity of the synthetic zeolite can be improved.
- the silicon resin before curing in which the gas absorbent is not mixed and the cap part 30 (parts of the side wall part 30a and the bottom face part 30b) molded in the above process are again formed into a mold having a predetermined shape (see FIG. (Not shown) and heated at about 150 ° C. for about 30 minutes.
- the light transmission part 35 (refer FIG. 2) which has translucency is shape
- the cap part 30 is taken out of the mold, and heated in an oven reduced in pressure by an oil-free pump for about two days under a temperature condition of about 240 ° C., so that the low molecular siloxane contained in the silicon resin is obtained. Remove. In addition, even if it heats for about 2 days, the low molecular siloxane in a silicon resin cannot be removed completely. However, the remaining low-molecular siloxane is reduced to an amount that can be absorbed by the gas absorbent mixed in the cap portion 30.
- the cap part 30 is formed.
- the blue-violet semiconductor laser device 20 and the monitor PD 42 are fabricated using a predetermined manufacturing process. Then, the blue-violet semiconductor laser device 20 and the monitor PD 42 chip are bonded to the submount 40 having the pad electrode 41 formed on one surface. At this time, the n-side electrode 28 side of the blue-violet semiconductor laser element 20 and the n-type region 42 c side of the monitoring PD 42 are joined to the pad electrode 41.
- the submount 40 is joined to the front surface region 11 b (see FIG. 4) of the lead terminal 11 approximately at the center (lateral direction) through the conductive adhesive layer 5 (see FIG. 5). To do. At this time, the lower surface side of the submount 40 to which the blue-violet semiconductor laser device 20 and the monitor PD 42 are not bonded is bonded to the upper surface of the front end region 11b. Further, the submount 40 is bonded so that the light reflecting surface 20b of the blue-violet semiconductor laser element 20 faces the front surface 10c of the base portion 10.
- the metal electrode 91 is used to connect the p-side electrode 27 of the blue-violet semiconductor laser device 20 and the front end region 12 b of the lead terminal 12. Further, the metal wire 92 is used to connect the p-type region 42 b of the monitoring PD 42 and the front end region 13 b of the lead terminal 13. In FIG. 7, the metal wires 91 and 92 are not shown.
- the connecting portions 101, 102, and 103 are cut and removed by cutting along the separation lines 180 and 190.
- the cap part 30 is put on the header part 10a of each separated base part 10 while fitting. In this way, the semiconductor laser device 100 (see FIG. 2) is formed.
- the volatile organic gas generated from the resin of the base part 10 and the cap part 30 is removed from the gas absorbent. Can be absorbed by.
- concentration in the package 50 can be made small.
- the base portion 10 and the cap portion 30 are formed of the resin 15 mixed with the gas absorbent 16, there is no need to separately install a member containing the gas absorbent in the package 50. Thereby, since it is not necessary to increase the internal volume of the package 50, it is possible to suppress an increase in the size of the semiconductor laser device 100.
- the size of the package 50 is substantially equal to the package size when formed without containing the gas absorbent 16, the resin 15 occupying the package 50 is contained by the amount contained in the package 50. Volume can be reduced. Thereby, since generation
- the cap part 30 including the light transmission part 35 is made of a translucent silicon resin, the cap part 30 can be easily manufactured and the structure of the cap part 30 can be simplified. Can do.
- a light transmitting portion 35 is formed of a silicon resin made of plate-like polydimethylsiloxane having a thickness of about 1 mm (manufactured by Shin-Etsu Chemical Co., Ltd .: KE-106), and this is disposed at a distance of 1 mm from the light emitting surface 20a. did.
- APC Auto Power Control
- the resin 15 has translucency, and the gas absorbent 16 is mixed into the mixture constituting the cap unit 30 other than the light transmission unit 35, whereby the cap unit 30 having the light transmission unit 35 is translucent. Therefore, the cap part 30 can be easily manufactured, and the structure of the cap part 30 can be simplified. Further, since the gas absorbent 16 is mixed in the resin 15 constituting the cap part 30 other than the light transmissive part 35, light absorption or light scattering by the gas absorbent 16 may occur in the light transmissive part 35. Absent. Thereby, it is possible to reliably emit the emitted light from the light transmitting portion 35 and to prevent the organic gas generated from the resin 15 of the cap portion 30 including the light transmitting portion 35 from being filled in the package 50. it can.
- the organic gas generated from the resin 15 can be sufficiently absorbed, and the base portion 10 and the cap portion 30 are both made of the resin 15 and the gas absorbent 16. It can be easily formed with a mixture.
- the gas barrier layer 17 is formed on the outer peripheral surface 10f of the base portion 10 formed by the mixture and the rear surface 10d of the header portion 10a, and on the outer surface 30d of the side wall portion 30a of the cap portion 30 and the bottom surface portion 30b.
- low molecular siloxane, volatile organic gas, or the like existing outside (in the atmosphere) of the semiconductor laser device 100 permeates through the material of the base portion 10 or the cap portion 30 and is packaged. Since it can suppress entering into 50, degradation of the blue-violet semiconductor laser element 20 can further be suppressed.
- the heat radiating part 11d extending outside the outer peripheral surface 10f of the base part 10, a sufficient heat radiating area can be secured, so that the heat generated by the blue-violet semiconductor laser element 20 is generated by the heat radiating part 11d. It is possible to sufficiently dissipate heat. Further, since the heat radiating portion 11d and the connecting portion 11c are connected at the rear surface 10d of the base portion 10, the blue-violet semiconductor laser device 20 is sealed on the front surface 10c side of the base portion 10 without interfering with the heat radiating portion 11d. The cap part 30 for doing can be attached.
- the heat radiating portion 11d can be easily exposed to the outside of the base portion 10, so that the heat dissipation characteristics of the heat radiating portion 11d can be improved. Can be improved.
- the heat dissipating part 11d is arranged outside the plurality of lead terminals 11 to 13 arranged on the same plane of the base part 10. That is, the lead terminal 12 or 13 located on the outermost side of the lead terminals 11 to 13 in the direction parallel to the same plane of the base portion 10 is sandwiched between the heat radiating portion 11d and the other lead terminals 11.
- the heat dissipating part 11d is not arranged between the lead terminals 11-13.
- the thermal radiation characteristic in the thermal radiation part 11d can be improved.
- the lead terminals 11 to 13 and the heat radiating portion 11d are arranged in the same plane, for example, each lead terminal and the heat radiating portion 11d can be easily formed with a lead frame or the like.
- the semiconductor laser device 100 is attached to a housing such as an optical pickup device, for example, the heat radiating portion 11d and the housing can be easily fixed, so that the heat generated by the blue-violet semiconductor laser device 20 is generated. The heat can be easily radiated to the housing.
- the lead terminal 11 can also function as a heat dissipation function. Thereby, the heat dissipation of the semiconductor laser device 100 can be further improved.
- the width W2 of the connecting portion 11c and the width W4 of the second heat radiating portion 11g are both wider than the width W5 of the portion penetrating the base portion 10 of the lead terminal 11 (W2> W5, W4> W5). .
- the heat generated by the blue-violet semiconductor laser device 20 is transmitted to the front end region 11b of the lead terminal 11 via the submount 40, and then transmitted to the connecting portion 11c and the heat radiating portion 11d from the lead terminal 11 (heat). Easy to conduct). Thereby, the heat of the blue-violet semiconductor laser element 20 can be transmitted to each heat radiating portion 11d connected to the connecting portion 11c and reliably radiated to the outside of the semiconductor laser device 100.
- the resin 15 has elasticity, and the blue-violet semiconductor laser element 20 is sealed by fitting the base portion 10 and the cap portion 30, whereby the inner side surface 30 c of the cap portion 30 is sealed with the base portion 10. Since it can be easily adhered to the outer peripheral surface 10f, the inside of the package 50 can be easily sealed. That is, since it is not necessary to further use an adhesive or the like for sealing, the generation of organic gas can be suppressed.
- the ratio of the gas absorbent 16 mixed in the resin (silicon resin) 15 constituting the cap portion 30 to the silicon resin is such that the gas absorbent 16 mixed in the resin (epoxy resin) 15 constituting the base portion 10 Less than the ratio to the epoxy resin.
- the base portion 110 is configured such that the outer diameter D1 of the outer peripheral surface 110f gradually decreases from the rear surface 110d of the header portion 110a toward the front surface 110c (110h) of the pedestal portion 110b.
- the resin is molded to taper.
- a claw portion 130e protruding inward from the inner side surface 130c of the side wall portion 130a is formed in a circumferential shape in the opening portion of the side wall portion 130a of the cap portion 130, and inside the bottom surface portion 130b of the cap portion 130.
- a protruding portion 130f that protrudes toward the opening of the cap portion 130 is formed in a region facing the pedestal portion 110b.
- the other configuration of the semiconductor laser device 100a is the same as that of the first embodiment.
- the cap is formed so that the outer peripheral surface 110f of the base portion 110 is resin-molded so as to have a tapered shape as shown in FIG. 8, and the claw portion 130e and the protruding portion 130f are provided.
- the manufacturing process of the first embodiment is the same as that of the first embodiment except that the part 130 is resin-molded.
- the inner side surface 130c of the cap portion 130 is more than the outer peripheral surface 110f of the base portion 110 (header portion 110a). Easy to fit.
- the side wall portion 130a of the cap portion 130 can be fitted and expanded according to the taper shape of the outer peripheral surface 110f. As a result, the inside of the package on which the blue-violet semiconductor laser element 20 is placed can be more hermetically sealed.
- the protruding portion 130f that protrudes toward the opening of the cap portion 130 is formed inside the bottom surface portion 130b of the cap portion 130, when the cap portion 130 is fitted into the base portion 110, the protruding portion 130f is By contacting the front surface 110c of the pedestal portion 110b, a gap having a predetermined interval can be reliably formed between the light emitting surface 20a of the blue-violet semiconductor laser device 20 and the light transmitting portion 135 of the cap portion 130. . Further, in this state, the claw portion 130e of the cap portion 130 can be engaged with the edge portion of the rear surface 110d of the header portion 110a while being elastically deformed, so that the cap portion 130 is forward (A1 direction) from the base portion 110. Can be prevented from falling off.
- the remaining effects of the first modification of the first embodiment are similar to those of the first embodiment.
- the lead terminal 11 and the front end region 11b are separated.
- the front end region 11b and the front end portion 211b of the lead terminal 11 are electrically connected via a metal wire 93 made of Au or the like.
- the other configuration of the semiconductor laser device 100b is the same as that of the first embodiment.
- the semiconductor laser device 100c according to the third modification of the first embodiment as shown in FIG. 10, unlike the first embodiment, the second heat radiation portion 11d disposed on both sides of the front end region 11b extends forward. It does not have the heat radiating part 11g.
- the same components as those in the first embodiment are denoted by the same reference numerals. Further, the illustration of the cap portion 30 fitted to the base portion 10 is omitted.
- the heat radiating part 11d connected to the rear end region 11h of the connecting part 11c is composed of only the first heat radiating part 211f having a width W21 extending to the outside of the base part 10.
- the width W21 is larger than the width W3 (see FIG. 4) of the first heat radiation part 11f of the first embodiment (W21> W3).
- the remaining structure of the semiconductor laser device 100c according to the third modification of the first embodiment is similar to that of the first embodiment.
- the first heat radiating portion 211f (see FIG. 10) is formed without forming the second heat radiating portion 11g in the first embodiment.
- the manufacturing process other than the above is substantially the same as the manufacturing process of the first embodiment.
- the semiconductor laser device 100c even if the second heat radiating part 11g is not provided, the heat radiating efficiency of the heat radiating part 11d can be easily maintained because the first heat radiating part 211f has the width W21.
- the semiconductor laser device 100c since the second heat radiating portion 11g is not formed, the side of the base portion 10 is widely opened. Thereby, a structure like the cap part 30 (refer FIG. 1) which seals the blue-violet semiconductor laser element 20 can be combined more freely.
- the remaining effects of the third modification example of the first embodiment are similar to those of the first embodiment.
- a semiconductor laser device 200 according to a second embodiment of the invention will be described.
- the rear end region 11h of the connecting portion 11c exposed from the rear surface 10d of the base portion 10 is bent upward (C2 direction), which is a direction substantially parallel to the rear surface 10d.
- C2 direction is a direction substantially parallel to the rear surface 10d.
- the other configuration of the semiconductor laser device 200 is the same as that of the third modification of the first embodiment. In the drawing, the same reference numerals are given to the same configurations as those of the third modification of the first embodiment. It is illustrated.
- the first heat radiating part 211f is substantially omitted from the top surface of the lead frame by using a press machine (not shown) with respect to the lead frame having the first heat radiating part 211f.
- the manufacturing process is substantially the same as that of the third modified example of the first embodiment except that a step of bending vertically upward is added.
- the heat radiating portion 11d (first heat radiating portion 211f) can be easily extended and arranged in the upward direction (C direction). Thereby, the surface area of the thermal radiation part 11d (1st thermal radiation part 211f) can be increased easily. Therefore, since the heat dissipation efficiency of the heat dissipation part 11d can be easily maintained, the heat dissipation characteristics can be further improved.
- the rear end region 11h is bent upward, so that the heat radiating portion 11d extends substantially parallel to the rear surface 10d. That is, the surface area of the heat radiating part 11d (first heat radiating part 211f) can be easily increased without changing the length of the semiconductor laser device 200 in the full length direction (A direction).
- the remaining effects of the second embodiment are similar to those of the first embodiment.
- a semiconductor laser device 200a according to a modification of the second embodiment will be described.
- a second heat radiating portion 211g extending forward from a first heat radiating portion 211f bent upward is formed as compared with the semiconductor laser device 200 of the second embodiment. Except that, it has the same configuration.
- symbol is attached
- a second heat radiating part 211g having a width W4 is connected to the first heat radiating part 211f of the heat radiating part 11d and the first heat radiating part 211f.
- the second heat radiating portion 211g is connected to the end of the first heat radiating portion 211f opposite to the side to which the connecting portion 11c is connected.
- the second heat radiating portion 211g is bent forward (A1 direction) in the connection region with the first heat radiating portion 211f.
- the second heat radiating portion 211g extends forward (A1 direction) on the same plane as the front end region 11b and the connecting portion 11c of the lead terminal 11 so as to be separated from the outer peripheral surface 10f of the base portion 10 by a distance W6. Is arranged.
- the manufacturing process of the semiconductor laser device 200a is not shown in the manufacturing process of the first embodiment after the width of the first heat radiation part 211f is increased to W21 and the lead frame as shown in FIG. 6 is manufactured. This is substantially the same as the manufacturing process of the second embodiment, except that a step of bending the first heat radiating portion 211f upward with respect to the upper surface of the lead frame is added using a press machine or the like.
- the surface area of the heat radiating portion 11d is further increased than in the case of the second embodiment. Therefore, the heat radiation efficiency of the heat radiation part 11d can be further improved.
- the remaining effects of the modification of the second embodiment are similar to those of the second embodiment.
- the semiconductor laser device 300 has the same configuration as that of the semiconductor laser device 100 except that the end region of the connection portion 311c is bent upward (in the C2 direction).
- the same components as those in the first embodiment are denoted by the same reference numerals.
- connection portion 311c having a larger width than the connection portion 11c in the first embodiment is provided between the front end region 11b of the lead terminal 11 and each of the heat dissipation portions 11d.
- an end region along the B direction of the connection portion 311c (a region on the B2 side or B1 side of each connection portion 311c) is substantially perpendicular to the upper surface of the front end region 11b (a blue-violet semiconductor laser element). 20 in the height direction (C2 direction).
- the end portions (B2 side and B1 side) of the front end region 11b to which the connection portion 311c is connected are also bent in the C2 direction.
- the connection portion 311c completely penetrates the base portion 10 in the A2 direction with the end region bent in the C2 direction.
- the connecting portion 311c has a width W31 of the end region extending upward in addition to the width W2 (see FIG. 4) of the connecting portion 11c of the first embodiment, so that the total width W2 + W31 (the connecting portion 311c). (Perimeter along the upper surface).
- the connection part 311c is seen along A2 direction in FIG. 13, the cross-sectional area has increased rather than the connection part 11c (refer FIG. 1).
- a lead frame 305 in which a substantially L-shaped cutout line 390 is formed between the connection portion 311c and the heat dissipation portion 11d is formed.
- a step of bending the front end region 11b and the end region of the connecting portion 311c upward with respect to the upper surface of the lead frame is added using a press machine (not shown).
- Other manufacturing processes are substantially the same as the manufacturing process of the first embodiment.
- connection portion 311c In the semiconductor laser device 300, the end region of the connection portion 311c is bent in the C2 direction. Thereby, since the cross-sectional area perpendicular to the A direction in which the connection portion 311c extends can be easily increased, the heat resistance inside the connection portion 311c is reduced, so that heat can be easily transmitted. As a result, the heat dissipation efficiency of the heat dissipation part 11d can be further improved.
- connection portion 311c since the end region of the connection portion 311c is bent upward, the rigidity of the connection portion 311c can be improved.
- the remaining effects of the third embodiment are similar to those of the first embodiment.
- FIG. 15 is a view of the base unit 10 in a cross section taken along line 490-490 in FIG. In the figure, the same components as those in the first embodiment are denoted by the same reference numerals.
- the lead terminals 12 and 13 are examples of the “second lead terminal” in the present invention.
- the notched portion surrounded by the lead terminal 11, the connecting portion 11c, and the front end region 11b shown in the first embodiment is not formed. That is, as shown in FIG. 15, the lead terminal 11 of the semiconductor laser device 400 is formed with a substantially rectangular planar portion 401 including the front end region 11b and the connecting portion 11c. In addition, the heat radiating part 11 d is connected to the flat part 401 behind the flat part 401 (A2 direction). Further, as shown in FIG. 16, the lead terminals 12 and 13 have a height direction (C different from that of the lead terminal 11 (front end region 11b) through an insulating film 402 made of epoxy resin formed on the flat portion 401. Direction).
- the flat portion 401 (lead terminal 11) and the lead terminals 12 and 13 are in a state of being insulated from each other and different in the height direction, and the base portion 10 is moved from the front (A1 side) to the rear (A2 side). Has penetrated.
- the other configuration of the semiconductor laser device 400 is the same as that of the first embodiment.
- the lead terminal 11 is repeated in the lateral direction (B direction) by etching the strip-shaped metal plate.
- a patterned lead frame 106 is formed.
- the lead terminals 12 and 13 are not patterned.
- the first heat radiating portion 11 f is patterned in a state where the first heat radiating portion 11 f is directly connected to the rear of the plane portion 401 without forming a notch portion surrounded by the lead terminal 11, the connecting portion 11 c and the front end region 11 b.
- a lead frame 107 in which lead terminals 12 and 13 are repeatedly patterned in the lateral direction (B direction) is formed separately.
- an insulating film 402 made of an epoxy resin is applied on a predetermined region of the flat portion 401 where the lead terminals 12 and 13 are disposed. Then, the epoxy resin is cured in a state where the lead frame 107 is disposed on the lead frame 106 so that the lead terminals 12 and 13 overlap the surface of the insulating film 402. As a result, the lead frame 106 and the lead frame 107 are bonded (see FIG. 17). Thereafter, as shown in FIGS. 15 and 16, the base portion 10 is molded so as to fix the lead terminals 11, 12 and 13. Other manufacturing processes of the fourth embodiment are substantially the same as those of the first embodiment.
- the front end region 11b and the lead terminals 12 and 13 are arranged on different planes. Thereby, the number of lead terminals can be easily increased without reducing the width of the lead terminals. In addition, even when the number of lead terminals is increased, the width (cross-sectional area) of the flat portion 401 can be appropriately ensured, so that heat is dissipated when heat is radiated from the front end region 11b to the heat radiating portion 11d via the flat portion 401. It can suppress that a (heat transfer) characteristic falls.
- the remaining effects of the fourth embodiment are similar to those of the first embodiment.
- one connecting portion 511c also serves as a lead terminal 511.
- FIG. 18 in order to describe the detailed structure of the lead frame, the outer shape of the base portion 10 (see FIG. 19) to which the front end region 11b is attached is indicated by a broken line.
- symbol is attached
- the lead terminal 511 is an example of the “first lead terminal” in the present invention.
- a lead terminal 511 having a width W5 extends backward from a rear end portion (A2 side) of the connection portion 511c having a width W2 on one side (B2 side). ing.
- a heat radiating portion 511d is connected to the rear end portion of the connecting portion 511c.
- Lead terminals 12 and 13 are provided between the connection portion 521c having the other (B1 side) width W52 and the connection portion 511c.
- the width W52 of the connection part 521c is larger than the width W2 of the connection part 511c (W52> W2). That is, as shown in FIG. 19, the structure on the connection portion 511c side (B2 side) and the structure on the connection portion 521c side (B1 side) are asymmetric with respect to the blue-violet semiconductor laser element 20 as viewed in a plan view. is there.
- the other configuration of the semiconductor laser device 500 is the same as that of the first embodiment.
- the manufacturing process of the first embodiment is substantially the same as that of the first embodiment, except that a lead frame patterned so that the lead terminals 12 and 13 are arranged on each other is formed.
- connection part 511c on one side (B2 side) and the lead terminal 511 are formed together, the width W52 of the connection part 521c of the heat radiation part 521d on the other side (B1 side) can be configured wider. As a result, the heat dissipation efficiency of the heat dissipation part 521d can be improved.
- the remaining effects of the fifth embodiment are similar to those of the first embodiment.
- the semiconductor laser device 500a according to the modified example of the fifth embodiment has the same configuration as that of the semiconductor laser device 500 of the fifth embodiment except that the heat radiation part 511d is not formed.
- the same components as those in the fifth embodiment are denoted by the same reference numerals.
- the heat radiation part 511d (see FIG. 18) shown in the fifth embodiment is not formed on the lead terminal 511, and only the heat radiation part 521d is formed on one side (B1 side).
- the other configuration of the semiconductor laser device 500a is the same as that of the fifth embodiment.
- the manufacturing process of the semiconductor laser device 500a is the same as that of the semiconductor laser device 500a except that a lead frame having a heat radiating portion 521d including only the connecting portion 521c, the first heat radiating portion 11f, and the second heat radiating portion 11g is formed on one side. This is substantially the same as the manufacturing process of the fifth embodiment.
- the heat radiation part 521d is provided only on one side (B1 side) of the lead terminal 511 as in the semiconductor laser device 500a, the heat generated by the blue-violet semiconductor laser element 20 is externally transmitted from the heat radiation part 521d via the connection part 521c. Can dissipate heat. Thereby, the width (B direction) of the semiconductor laser device 500a can be easily reduced.
- the heat radiation part 521d is formed only on one side by configuring the connection part 521c to which the heat radiation part 521d is connected to be wider than the connection part 11c of the first embodiment. Can also sufficiently dissipate heat.
- the remaining effects of the modification of the fifth embodiment are similar to those of the first embodiment.
- the inner surface of the bottom surface portion 630b and the side wall portion 630a extending in a cylindrical shape from the bottom surface portion 630b has a cross section corresponding to the cross sectional shape (oval shape) of the base portion 610 (header portion 610a).
- the cap portion 630 is formed of a mixture of a gas absorbent made of particulate synthetic zeolite and a thermoplastic fluororesin having elasticity.
- the gas absorbent is preferably mixed in the range of about 40 wt% to about 70 wt% with respect to the thermoplastic fluororesin.
- the thermoplastic fluororesin is an example of the “resin” in the present invention.
- a light transmitting portion 635 capable of transmitting the laser light emitted from the blue-violet semiconductor laser element 20 toward the outside is formed integrally with the cap portion 630 at the center portion of the bottom surface portion 630b having an oval shape.
- the light transmitting portion 635 does not contain a gas absorbent and thus has translucency, whereas the side wall portion 630a and the bottom surface portion 630b contain a gas absorbent and thus transmit light. Does not have sex.
- the gas barrier layer 17 (see FIG. 2) for blocking the ingress of gas from the outside is formed on the outer peripheral surface 610f and the rear surface 610d of the base portion 610, and the cap The gas barrier layer 33 is formed on the side wall portion 630a of the portion 630 and the outer surface 630d of the bottom surface portion 630b.
- the ratio of the gas absorbent to the thermoplastic fluororesin is preferably about 40% or more and about 70% or less.
- the kneaded product of the thermoplastic fluororesin and the gas absorbent is poured into a mold (not shown) having a predetermined shape and is cured by heating.
- a mold not shown
- the side wall part 630a of the cap part 630 and the bottom face part 630b in which an opening is formed in the substantially central part are molded.
- the absorption capacity of the gas absorbent is improved.
- thermoplastic fluororesin in which the gas absorbent is not mixed and the cap part 630 (parts of the side wall part 630a and the bottom face part 630b) molded in the above process are again formed into a mold having a predetermined shape (not shown). And heating under a temperature condition of about 170 ° C. Thereby, the light transmission part 635 (refer FIG. 21) which has translucency is shape
- the volatile gas from a thermoplastic fluororesin does not form a deposit
- the other configuration of the semiconductor laser device 600 is the same as that of the first embodiment.
- the base portion 610 in which the header portion 610a and the base portion 610b are extended in the width direction (B direction) so as to correspond to the cross-sectional shape (long round shape) of the cap portion 630. Is substantially the same as that of the first embodiment except that resin molding is performed.
- the base portion 610 and the cap portion 630 are formed of a mixture of an epoxy resin, a thermoplastic fluororesin, and a gas absorbent, respectively. Thereby, the volatile organic gas generated from the resin of the base portion 610 and the cap portion 630 can be absorbed by the gas absorbent.
- a light transmitting portion 635 is formed from a thermoplastic fluororesin (manufactured by 3M: THV500G) made of tetrafluoroethylene, hexafluoropropylene and vinylidene fluoride having a thickness of about 1 mm, and this is formed at a distance of 1 mm from the light emitting surface 20a. Were spaced apart.
- laser light adjusted to an output of 10 mW by APC from the blue-violet semiconductor laser element 20 under the condition of 70 ° C. was irradiated to the light transmitting portion 635 for 1000 hours. As a result, the transmittance of the light transmitting portion 635 was increased. It was confirmed that there was no change. From this result, the usefulness of using a thermoplastic fluororesin for the cap part 630 was confirmed.
- the blue-violet semiconductor laser device 20 was attached to a metal stem (base portion) having a diameter (outer diameter) of 9 mm.
- a thermoplastic fluororesin made by 3M: cut into a size of 2 mm x 2 mm x 0.1 mm (length x width x thickness) in the package) THV500G was added and sealed.
- an operation test was performed by emitting laser light adjusted to an output of 10 mW by APC from the blue-violet semiconductor laser element 20 for 250 hours.
- an operation test was performed after sealing an acrylic plate cut into the same size as the above in the same package. In this case, the operating current began to increase in 140 hours, and the laser element was damaged.
- the semiconductor laser device 600 in which the cap portion 630 is formed using this thermoplastic fluororesin the blue-violet semiconductor laser element 20 Deterioration can be further suppressed. Further, since it is not necessary to perform degassing for the thermoplastic fluororesin, the semiconductor laser device 600 having excellent characteristics can be easily manufactured. The remaining effects of the semiconductor laser device 600 according to the sixth embodiment are similar to those of the first embodiment.
- the seventh embodiment will be described with reference to FIGS. 22 and 23.
- a plurality of semiconductor laser elements that emit laser beams having different wavelengths are mounted to constitute an integrated semiconductor laser device.
- the same components as those in the sixth embodiment are denoted by the same reference numerals as those in the sixth embodiment.
- the three-wavelength semiconductor laser device 700 includes the blue-violet semiconductor laser element 20 of the first embodiment, the red semiconductor laser element 70 having an oscillation wavelength of about 650 nm, and an infrared having an oscillation wavelength of about 780 nm.
- each of the conductive submounts 740 made of AlN via the pad electrode 741 It has a structure bonded on the surface. Further, the submount 740 is bonded to the surface of the lead terminal 711 (front end region 711 b) exposed from the base portion 610 through the conductive adhesive layer 5.
- the cap portion 630 is fitted and covered with the base portion 610 so that the package is hermetically sealed.
- the three-wavelength semiconductor laser device 700 is an example of the “semiconductor light emitting device” in the present invention.
- the two-wavelength semiconductor laser element 60, the red semiconductor laser element 70, and the infrared semiconductor laser element 80 are examples of the “semiconductor light emitting element” in the present invention.
- lead terminals 711, 712, 713, 714, and 715 made of a metal lead frame are the same so as to penetrate the header portion 610a in a state of being insulated from each other. It is arranged on a plane.
- the lead terminal 711 passes through substantially the center of the header portion 610a.
- Lead terminals 712 and 713 and lead terminals 714 and 715 are arranged on the outer side (B2 side and B1 side) in the width direction (B direction) of the lead terminal 711, respectively.
- the lead terminals 711 to 715 have front (A1 side) front end regions 711b to 715b, respectively.
- the front end regions 711b to 715b are exposed from the front surface 610c of the header portion 610a and disposed on the upper surface 610e of the pedestal portion 610b.
- the front end region 711b of the lead terminal 711 extends in the B direction on the pedestal portion 610b. Further, the blue-violet semiconductor laser element 20 and the two-wavelength semiconductor laser element 60 are fixed substantially at the center of the front end region 711b.
- the front end region 711b is an example of the “element placement portion” in the present invention.
- the lead terminal 711 has a header portion 610a on the rear side (B2 side and B1 side) of the lead terminals 712 and 715 on the same plane as the lead terminals 711 to 715 from the both ends in the B direction of the front end region 711b.
- a pair of heat dissipating portions 711d extending in the (A2 direction), extending to the B2 side and the B1 side, away from the outer peripheral surface 610f of the base portion 610, and extending toward the front (A1 direction) again is formed.
- the width in the B direction of the heat radiating portion 711d is formed wider than the width in the B direction of the portion of the lead terminal 711 that penetrates the header portion 610a.
- the heat generated by the blue-violet semiconductor laser device 20 and the two-wavelength semiconductor laser device 60 operating in the package is external to the three-wavelength semiconductor laser device 700 through the submount 740, the front end region 711b, and the heat radiation portions 711d on both sides. To dissipate heat.
- the two-wavelength semiconductor laser element 60 includes a common n-type GaAs substrate 71 with a red semiconductor laser element 70 and an infrared semiconductor laser element 80 separated by a recess 65 having a predetermined groove width. It is formed on the surface.
- the red semiconductor laser device 70 has an n-type cladding layer 72 made of AlGaInP, a quantum well layer made of GaInP, and a barrier layer made of AlGaInP alternately stacked on the upper surface of an n-type GaAs substrate 71.
- An active layer 73 having an MQW structure and a p-type cladding layer 74 made of AlGaInP are formed.
- a current blocking layer 76 made of SiO 2 is formed to cover the upper surface of the p-type cladding layer 74 other than the ridge 75 and both side surfaces of the ridge 75.
- a p-side electrode 77 in which a Pt layer having a thickness of about 200 nm and an Au layer having a thickness of about 3 ⁇ m are stacked is formed on the top surfaces of the ridge 75 and the current blocking layer 76. Further, on the lower surface of the n-type GaAs substrate 71, an n-side electrode 78 is formed in which an AuGe layer, a Ni layer, and an Au layer are stacked in this order from the n-type GaAs substrate 71.
- the n-side electrode 78 is provided as a common n-side electrode for the red semiconductor laser element 70 and the infrared semiconductor laser element 80.
- the infrared semiconductor laser device 80 includes an n-type cladding layer 82 made of AlGaAs, a quantum well layer made of AlGaAs with a low Al composition, and a barrier layer made of AlGaAs with a high Al composition on the upper surface of the n-type GaAs substrate 71.
- an active layer 83 having an MQW structure and a p-type cladding layer 84 made of AlGaAs are formed.
- a current blocking layer 86 made of SiO 2 is formed to cover the upper surface of the p-type cladding layer 84 other than the ridge 85 and both side surfaces of the ridge 85.
- a p-side electrode 87 is formed on the top surfaces of the ridge 85 and the current blocking layer 86.
- the blue-violet semiconductor laser device 20 is connected to the front end region 714 b of the lead terminal 714 through a metal wire 791 wire-bonded to the p-side electrode 27.
- the red semiconductor laser element 70 is connected to the front end region 713 b of the lead terminal 713 through a metal wire 792 that is wire-bonded to the p-side electrode 77.
- the infrared semiconductor laser element 80 is connected to the front end region 712 b of the lead terminal 712 via a metal wire 793 wire-bonded to the p-side electrode 87.
- the monitor PD 742 formed so as to be able to receive the laser light from the light reflection surface of each laser element is connected to the front end region 715b of the lead terminal 715 via a metal wire 794 wire-bonded to the p-type region 742b.
- the n-side electrode 28 of the blue-violet semiconductor laser device 20, the n-side electrode 78 of the two-wavelength semiconductor laser device 60, and the n-type region (not shown) of the monitoring PD 742 are both connected via the submount 740.
- the lead terminal 711 is electrically connected.
- the blue-violet semiconductor laser device 20 and the two-wavelength semiconductor laser device 60 are arranged on the submount 740 in a state of being arranged in the horizontal direction (direction B in FIG. 23). This is substantially the same as the sixth embodiment except that it is joined to the first embodiment.
- the effects of the three-wavelength semiconductor laser device 700 are the same as in the sixth embodiment.
- the lead terminal 711 and the lead terminals 712 to 715 are formed at different height positions. That is, the lead terminals 712 to 715 are formed on a plane in the height direction (C direction) different from the lead terminal 711 (front end region 711b) through the insulating film 402 made of epoxy resin formed on the flat portion 401. Has been.
- the flat portion 401 (lead terminal 711) and the lead terminals 712 to 715 are insulated from each other and at different positions in the height direction, the base portion 610 is moved from the front (A1 side) to the rear ( (A2 side).
- the lead terminals 712 to 715 are examples of the “second lead terminal” in the present invention.
- one (B2 side) connection portion 711c also serves as the lead terminal 711.
- the outer shape of the base portion 610 to which the front end region 711b is attached is indicated by a broken line.
- the other configuration of the semiconductor laser device 705 is the same as that of the seventh embodiment.
- the manufacturing process in the modification of the seventh embodiment is substantially the same as the manufacturing process of the seventh embodiment.
- the front end region 711b and the lead terminals 712 to 715 are arranged on different planes. Thereby, it is possible to obtain a three-wavelength semiconductor laser device 705 capable of easily increasing the number of lead terminals without reducing the width of the lead terminals.
- the remaining effects of the modification of the seventh embodiment are similar to those of the seventh embodiment.
- optical pickup device 850 is an example of the “optical device” in the present invention.
- the optical pickup device 850 includes a three-wavelength semiconductor laser device 700 (see FIG. 23) according to the seventh embodiment, and an optical system 820 that adjusts the laser light emitted from the three-wavelength semiconductor laser device 700. And a light detection unit 830 that receives the laser beam.
- the optical system 820 includes a polarization beam splitter (PBS) 821, a collimator lens 822, a beam expander 823, a ⁇ / 4 plate 824, an objective lens 825, a cylindrical lens 826, and an optical axis correction element 827.
- PBS polarization beam splitter
- the PBS 821 totally transmits the laser light emitted from the three-wavelength semiconductor laser device 700 and totally reflects the laser light returning from the optical disk 835.
- the collimator lens 822 converts the laser light from the three-wavelength semiconductor laser device 700 that has passed through the PBS 821 into parallel light.
- the beam expander 823 includes a concave lens, a convex lens, and an actuator (not shown). The actuator has a function of correcting the wavefront state of the laser light emitted from the three-wavelength semiconductor laser device 700 by changing the distance between the concave lens and the convex lens in accordance with a servo signal from a servo circuit described later.
- the ⁇ / 4 plate 824 converts the linearly polarized laser light converted into substantially parallel light by the collimator lens 822 into circularly polarized light.
- the ⁇ / 4 plate 824 converts the circularly polarized laser beam returned from the optical disk 835 into linearly polarized light.
- the polarization direction of the linearly polarized light is orthogonal to the direction of the linearly polarized light of the laser light emitted from the three-wavelength semiconductor laser device 700.
- the laser beam returning from the optical disk 835 is substantially totally reflected by the PBS 821.
- the objective lens 825 converges the laser light transmitted through the ⁇ / 4 plate 824 onto the surface (recording layer) of the optical disk 835.
- the objective lens 825 is moved in the focus direction, tracking direction, and tilt direction by an objective lens actuator (not shown) in accordance with servo signals (tracking servo signal, focus servo signal, and tilt servo signal) from a servo circuit described later. It has been made movable.
- a cylindrical lens 826, an optical axis correction element 827, and a light detection unit 830 are arranged along the optical axis of the laser light totally reflected by the PBS 821.
- the cylindrical lens 826 imparts astigmatism to the incident laser light.
- the optical axis correction element 827 is configured by a diffraction grating, and a spot of 0th-order diffracted light of each of blue-violet, red, and infrared laser light that has passed through the cylindrical lens 826 is on a detection region of the light detection unit 830 described later. They are arranged to match.
- the light detection unit 830 outputs a reproduction signal based on the intensity distribution of the received laser beam.
- the light detection unit 830 has a detection area of a predetermined pattern so that a focus error signal, a tracking error signal, and a tilt error signal can be obtained together with the reproduction signal.
- the optical pickup device 850 including the three-wavelength semiconductor laser device 700 is configured.
- the three-wavelength semiconductor laser device 700 is configured to apply a voltage independently between the lead terminal 711 and the lead terminals 712 to 714, thereby providing the blue-violet semiconductor laser device 20, the red semiconductor laser.
- the element 70 and the infrared semiconductor laser element 80 are configured to be capable of independently emitting blue-violet, red, and infrared laser beams.
- the laser light emitted from the three-wavelength semiconductor laser device 700 was adjusted by the PBS 821, the collimator lens 822, the beam expander 823, the ⁇ / 4 plate 824, the objective lens 825, the cylindrical lens 826, and the optical axis correction element 827. Thereafter, the light is irradiated onto the detection region of the light detection unit 830.
- the laser power emitted from the blue-violet semiconductor laser element 20, the red semiconductor laser element 70, and the infrared semiconductor laser element 80 is made constant. In this way, it is possible to irradiate the recording layer of the optical disc 835 with laser light and to obtain a reproduction signal output from the light detection unit 830. Further, feedback control of the actuator of the beam expander 823 and the objective lens actuator that drives the objective lens 825 can be performed by the focus error signal, the tracking error signal, and the tilt error signal that are simultaneously output.
- the laser power emitted from the blue-violet semiconductor laser element 20 and the red semiconductor laser element 70 (infrared semiconductor laser element 80) is controlled based on the information to be recorded.
- the optical disk 835 is irradiated with laser light. Thereby, information can be recorded on the recording layer of the optical disc 835.
- feedback control of the actuator of the beam expander 823 and the objective lens actuator that drives the objective lens 825 can be performed by the focus error signal, tracking error signal, and tilt error signal output from the light detection unit 830. it can.
- recording and reproduction on the optical disk 835 can be performed using the optical pickup device 850 including the three-wavelength semiconductor laser device 700.
- the optical pickup device 850 includes the three-wavelength semiconductor laser device 700 according to the seventh embodiment, the individual semiconductors mounted on the three-wavelength semiconductor laser device 700 due to the favorable heat dissipation of the three-wavelength semiconductor laser device 700.
- a highly reliable optical pickup device 850 that can withstand long-term use in which degradation of the laser element is suppressed can be obtained.
- optical disk apparatus 900 With reference to FIGS. 25 and 26, an optical disc apparatus 900 according to a ninth embodiment of the present invention will be described.
- the optical disk device 900 is an example of the “optical device” in the present invention.
- the optical disk device 900 includes an optical pickup device 850 according to the eighth embodiment, a controller 901, a laser drive circuit 902, a signal generation circuit 903, a servo circuit 904, and a disk drive motor 905. I have.
- the controller 901 receives recording data S1 generated based on information to be recorded on the optical disk 835. Further, the controller 901 outputs signals S2 and S7 to the laser driving circuit 902 and the servo circuit 904, respectively, in response to the recording data S1 and a signal S5 from a signal generation circuit 903 described later. Further, as will be described later, the controller 901 outputs the reproduction data S10 based on the signal S5. Further, the laser drive circuit 902 outputs a signal S3 for controlling the laser power emitted from the three-wavelength semiconductor laser device 700 in the optical pickup device 850 in accordance with the signal S2. That is, the controller 901 and the laser drive circuit 902 drive the three-wavelength semiconductor laser device 700.
- the optical disc 835 is irradiated with a laser beam controlled according to the signal S3.
- a signal S 4 is output from the light detection unit 830 in the optical pickup device 850 toward the signal generation circuit 903.
- the optical system 820 (the actuator of the beam expander 823 and the objective lens actuator that drives the objective lens 825) in the optical pickup device 850 is controlled by a servo signal S8 from a servo circuit 904 described later.
- the signal generation circuit 903 amplifies and calculates the signal S4 output from the optical pickup device 850, outputs the first output signal S5 including the reproduction signal to the controller 901, and performs feedback control of the optical pickup device 850.
- a second output signal S6 for controlling the rotation of the optical disk 835 described later is output to the servo circuit 904.
- the servo circuit 904 includes a servo signal S8 for controlling the optical system 820 in the optical pickup device 850 and the disk in accordance with the second output signal S6 and the signal S7 from the signal generation circuit 903 and the controller 901.
- a motor servo signal S9 for controlling the drive motor 905 is output.
- the disk drive motor 905 controls the rotation speed of the optical disk 835 according to the motor servo signal S9.
- a laser having a wavelength to be irradiated by means for identifying the type (CD, DVD, BD, etc.) of the optical disk 835, which is not described here. Light is selected.
- a signal S2 is output from the controller 901 to the laser driving circuit 902 so that the intensity of the laser beam having a wavelength to be emitted from the three-wavelength semiconductor laser device 700 in the optical pickup device 850 is constant.
- the three-wavelength semiconductor laser device 700, the optical system 820, and the light detection unit 830 of the optical pickup device 850 function, so that a signal S4 including a reproduction signal is output from the light detection unit 830 to the signal generation circuit 903.
- the signal generation circuit 903 outputs a signal S5 including a reproduction signal to the controller 901.
- the controller 901 extracts the reproduction signal recorded on the optical disc 835 by processing the signal S5, and outputs it as reproduction data S10.
- reproduction data S10 for example, information such as video and audio recorded on the optical disc 835 can be output to a monitor or a speaker. Further, feedback control of each unit is also performed based on the signal S4 from the light detection unit 830.
- laser light having a wavelength to be irradiated is selected by means for identifying the type (CD, DVD, BD, etc.) of the optical disk 835.
- a signal S2 is output from the controller 901 to the laser driving circuit 902 in accordance with the recording data S1 corresponding to the information to be recorded.
- the three-wavelength semiconductor laser device 700, the optical system 820, and the light detection unit 830 of the optical pickup device 850 function, so that information is recorded on the optical disk 835 and each unit is based on the signal S4 from the light detection unit 830. Perform feedback control.
- the optical disk device 900 includes the optical pickup device 850 according to the eighth embodiment, the individual semiconductor laser elements mounted on the optical pickup device 850 are deteriorated by the good heat dissipation of the three-wavelength semiconductor laser device 700. Accordingly, it is possible to obtain a highly reliable optical disc apparatus 900 that can withstand long-term use in which the above-described suppression is suppressed. In addition, it is possible to obtain an optical disc device 900 in which an increase in the size of the optical pickup device 850 is suppressed.
- FIGS. 10th Embodiment A configuration of a projector device 950 according to the tenth embodiment of the present invention will be described with reference to FIGS.
- projector device 950 an example will be described in which individual semiconductor laser elements constituting RGB three-wavelength semiconductor laser device 910 are turned on substantially simultaneously.
- the RGB three-wavelength semiconductor laser device 910 is an example of the “semiconductor light emitting device” in the present invention
- the projector device 950 is an example of the “optical device” in the present invention.
- the projector device 950 includes an RGB three-wavelength semiconductor laser device 910, an optical system 920 composed of a plurality of optical components, and a control unit 990 that controls the RGB three-wavelength semiconductor laser device 910 and the optical system 920. ing. As a result, the laser light emitted from the RGB three-wavelength semiconductor laser device 910 is modulated by the optical system 920 and then projected onto an external screen 995 or the like.
- the RGB three-wavelength semiconductor laser device 910 includes a green semiconductor laser element 660 having a green (G) oscillation wavelength of about 530 nm and a blue semiconductor laser element having a blue (B) wavelength of about 480 nm.
- a red semiconductor laser element 670 having a red (R) oscillation wavelength of about 655 nm is joined to the two-wavelength semiconductor laser element 650 in which 665 is monolithically formed, and laser light having three wavelengths of RGB is emitted.
- An RGB three-wavelength semiconductor laser device 910 is provided.
- the RGB three-wavelength semiconductor laser device 910 refers to the three-wavelength semiconductor laser device 705 of the modified example of the seventh embodiment shown in FIG. 24, and replaces the blue-violet semiconductor laser device 20 with the upper surface of the n-type GaAs substrate 71.
- a red semiconductor laser element 670 (see FIG. 27) formed thereon is provided, and a green semiconductor laser element 660 is used instead of the two-wavelength semiconductor laser element 60 in which the red semiconductor laser element 70 and the infrared semiconductor laser element 80 are monolithically formed.
- the blue semiconductor laser element 665 includes a two-wavelength semiconductor laser element 650 (see FIG. 27) monolithically formed on the lower surface of the n-type GaN substrate 21. Each semiconductor laser element is bonded to the surface of the submount 740 via the pad electrode 741.
- the red semiconductor laser element 670 is connected to the front end region 714b (see FIG. 24) of the lead terminal 714 through a metal wire 791 wire-bonded to the p-side electrode 77.
- the blue semiconductor laser element 665 is connected to the front end region 713b (see FIG. 24) of the lead terminal 713 through a metal wire 792 wire-bonded to the p-side pad electrode 666.
- the green semiconductor laser element 660 is connected to the front end region 712b (see FIG. 24) of the lead terminal 712 through a metal wire 793 wire-bonded to the p-side pad electrode 661.
- the monitor PD 742 formed so as to be able to receive the laser light from the light reflection surface of each laser element has a lead terminal 715 connected via a metal wire 794 wire-bonded to the p-type region 742b (see FIG. 23). It is connected to the front end region 715b (see FIG. 24).
- the n-side electrode 678 of the red semiconductor laser element 670, the n-side electrode 658 of the two-wavelength semiconductor laser element 650, and the n-type region (not shown) of the monitoring PD 742 are both read through the submount 740.
- a cathode common connection is realized.
- RGB three-wavelength semiconductor laser device 910 are the same as those of the three-wavelength semiconductor laser device 700 of the seventh embodiment.
- the laser light emitted from the RGB three-wavelength semiconductor laser device 910 is converted into parallel light having a predetermined beam diameter by a dispersion angle control lens 922 composed of a concave lens and a convex lens. After that, the light enters the fly eye integrator 923.
- the fly-eye integrator 923 two fly-eye lenses made up of a lens group having an eyelet shape face each other, and the dispersion angle control is performed so that the light quantity distribution when entering the liquid crystal panels 929, 933, and 940 is uniform.
- a lens action is given to the light incident from the lens 922. That is, the light transmitted through the fly-eye integrator 923 is adjusted so as to be incident with a spread of an aspect ratio (for example, 16: 9) corresponding to the size of the liquid crystal panels 929, 933, and 940.
- the light transmitted through the fly eye integrator 923 is condensed by the condenser lens 924.
- the condenser lens 924 Of the light transmitted through the condenser lens 924, only red light is reflected by the dichroic mirror 925, while green light and blue light are transmitted through the dichroic mirror 925.
- the red light is incident on the liquid crystal panel 929 via the incident side polarizing plate 928 after being collimated by the lens 927 through the mirror 926.
- the liquid crystal panel 929 modulates red light by being driven according to a red image signal (R image signal).
- dichroic mirror 930 only green light out of the light transmitted through the dichroic mirror 925 is reflected, while blue light passes through the dichroic mirror 930.
- the green light is incident on the liquid crystal panel 933 via the incident-side polarizing plate 932 after being collimated by the lens 931.
- the liquid crystal panel 933 modulates green light by being driven according to a green image signal (G image signal).
- the blue light transmitted through the dichroic mirror 930 passes through the lens 934, the mirror 935, the lens 936, and the mirror 937, and is further collimated by the lens 938 and then enters the liquid crystal panel 940 through the incident-side polarizing plate 939. Is done.
- the liquid crystal panel 940 is driven in accordance with a blue image signal (B image signal) to modulate blue light.
- red light, green light, and blue light modulated by the liquid crystal panels 929, 933, and 940 are combined by the dichroic prism 941 and then incident on the projection lens 943 through the output side polarizing plate 942.
- the projection lens 943 adjusts zoom and focus of the projected image by displacing a lens group for forming an image of projection light on the projection surface (screen 995) and a part of the lens group in the optical axis direction.
- steady voltage as R signal related to driving red semiconductor laser element 670, G signal related to driving green semiconductor laser element 660, and B signal related to driving blue semiconductor laser element 665 is controlled by control unit 990.
- R signal related to driving red semiconductor laser element 670, G signal related to driving green semiconductor laser element 660, and B signal related to driving blue semiconductor laser element 665 is controlled by control unit 990.
- the red semiconductor laser element 670, the green semiconductor laser element 660, and the blue semiconductor laser element 665 of the RGB three-wavelength semiconductor laser device 910 oscillate substantially simultaneously.
- the control unit 990 controls the light intensity of each of the red semiconductor laser element 670, the green semiconductor laser element 660, and the blue semiconductor laser element 665, thereby controlling the hue and brightness of the pixels projected on the screen 995. The As a result, a desired image is projected on the screen 995 by the control unit 990.
- the projector device 950 on which the RGB three-wavelength semiconductor laser device 910 is mounted is configured.
- FIG. 27 With reference to FIG. 27, FIG. 29 and FIG. 30, the configuration of a projector apparatus 980 according to the eleventh embodiment of the present invention will be described.
- projector device 980 an example in which individual semiconductor laser elements constituting RGB three-wavelength semiconductor laser device 910 are lit in time series will be described.
- the projector device 980 is an example of the “optical device” in the present invention.
- the projector device 980 includes the RGB three-wavelength semiconductor laser device 910 and the optical system 970 used in the tenth embodiment, and a control unit 991 that controls the RGB three-wavelength semiconductor laser device 910 and the optical system 970. ing. As a result, the laser light from the RGB three-wavelength semiconductor laser device 910 is modulated by the optical system 970 and then projected onto the screen 995 or the like.
- the laser light emitted from the RGB three-wavelength semiconductor laser device 910 is converted into parallel light by the lens 972 and then incident on the light pipe 974.
- the inner surface of the light pipe 974 is a mirror surface, and the laser light travels in the light pipe 974 while being repeatedly reflected by the inner surface of the light pipe 974. At this time, the intensity distribution of the laser light of each color emitted from the light pipe 974 is made uniform by the multiple reflection action in the light pipe 974. Further, the laser light emitted from the light pipe 974 is incident on a digital micromirror device (DMD) 976 via a relay optical system 975.
- DMD digital micromirror device
- DMD976 consists of a group of minute mirrors arranged in a matrix. Further, the DMD 976 expresses (modulates) the gradation of each pixel by switching the reflection direction of the light at each pixel position between a first direction A toward the projection lens 980 and a second direction B deviating from the projection lens 980. ) Function. Of the laser light incident on each pixel position, the light reflected in the first direction A (ON light) is incident on the projection lens 980 and projected onto the projection surface (screen 995). The light (OFF light) reflected by the DMD 976 in the second direction B is not incident on the projection lens 980 but is absorbed by the light absorber 977.
- the control unit 991 controls the pulse power supply to be supplied to the RGB three-wavelength semiconductor laser device 910, whereby the red semiconductor laser element 670 and the green semiconductor laser element 660 of the RGB three-wavelength semiconductor laser device 910 are controlled.
- the blue semiconductor laser element 665 is divided in time series and is periodically driven one by one.
- the control unit 991 causes the DMD 976 of the optical system 970 to synchronize with the driving states of the red semiconductor laser element 670, the green semiconductor laser element 660, and the blue semiconductor laser element 665, respectively. Modulates light according to gradation.
- an R signal relating to driving of the red semiconductor laser element 670 (see FIG. 27), a G signal relating to driving of the green semiconductor laser element 660 (see FIG. 27), and a blue semiconductor laser element 665.
- the B signal related to the driving of (see FIG. 27) is supplied to each laser element of the RGB three-wavelength semiconductor laser device 910 by the control unit 991 (see FIG. 29) in a state of being divided in time series so as not to overlap each other.
- the control unit 991 In synchronization with the B signal, G signal, and R signal, the control unit 991 outputs the B image signal, the G image signal, and the R image signal to the DMD 976, respectively.
- the blue light of the blue semiconductor laser element 665 is emitted based on the B signal in the timing chart shown in FIG. 30, and at this timing, the blue light is modulated by the DMD 976 based on the B image signal.
- the green light of the green semiconductor laser element 660 is emitted based on the G signal output next to the B signal, and at this timing, the green light is modulated by the DMD 976 based on the G image signal.
- red light from the red semiconductor laser element 670 is emitted based on the R signal output next to the G signal, and at this timing, the red light is modulated by the DMD 976 based on the R image signal.
- the blue light from the blue semiconductor laser element 665 is emitted based on the B signal output next to the R signal, and at this timing, the blue light is again modulated by the DMD 976 based on the B image signal.
- an image by laser light irradiation based on the B image signal, the G image signal, and the R image signal is projected onto the projection surface (screen 995).
- the projector device 980 on which the RGB three-wavelength semiconductor laser device 910 is mounted is configured.
- the RGB three-wavelength semiconductor laser device 910 (see FIG. 27) is mounted inside the projector apparatus.
- the highly reliable projector devices 950 and 980 that can withstand long-term use in which deterioration of the red semiconductor laser element 670, the green semiconductor laser element 660, and the blue semiconductor laser element 665 are suppressed due to the heat dissipation are easily obtained. be able to.
- projector devices 950 and 980 can be obtained in which an increase in the size of the RGB three-wavelength semiconductor laser device 910 is suppressed.
- the semiconductor laser device may be configured by using a resin material in which the gas absorbent is mixed only in the base portion and using a resin material in which the gas absorbent is not mixed in the cap portion.
- the semiconductor laser device package may be configured using a resin material in which a gas absorbent is mixed only in the cap portion and using a resin material in which the gas absorbent is not mixed in the base portion.
- the present invention is not limited to this.
- particulate silica gel or activated carbon pulverized to have a particle diameter of several tens of ⁇ m to several hundreds of ⁇ m or less may be used as a gas absorbent, and any of synthetic zeolite, silica gel, and activated carbon may be used. It may be used.
- the cap portion is formed of a stretchable silicon resin or thermoplastic fluororesin, and the cap portion is fitted to the base portion to constitute the semiconductor laser device package.
- the base portion of the lead frame is formed using a stretchable silicon resin or thermoplastic fluororesin, and the base portion is fitted to the cap portion to constitute a package of the semiconductor laser device. Also good.
- the base part and the cap part are shown as being formed of a mixture of resin and gas absorbent, but the present invention is not limited to this.
- one of the base portion and the cap portion may be formed using a metal material, and the other may be formed of a mixture of a resin and a gas absorbent.
- the base portion is formed by mixing a gas absorbent (synthetic zeolite) pulverized into a resin (epoxy resin), but the present invention is not limited thereto. Not limited.
- a plurality of pellet-shaped (columnar) gas absorbents 116 may be embedded in the base portion 115 without being crushed.
- most of the pellet-shaped gas absorbent 116 is embedded in the resin 15 (for example, epoxy resin), and one end portion 116a of the plurality of embedded pellets is the end surface (front surface 115c) of the base portion 115. Exposed from.
- the organic gas generated in the resin 15 is absorbed by the gas absorbent 116 embedded in the base portion 115, and the organic gas leaking into the package is also detected in the base. It is absorbed by one end portion 116a exposed at the end surfaces (front surfaces 115c and 115h) of the portion 115. Further, compared with the internal structure of the base portion 10 shown in FIG. 2, the vicinity of the outer peripheral surface 115f of the base portion 115 has a region constituted only by the resin 15 without the gas absorbent 116. Accordingly, it is possible to suppress the entry of low molecular siloxane and volatile organic gas from the outside (in the atmosphere) into the resin 15. Note that the formation of a gas barrier layer on the outer peripheral surface 115f can further enhance the effect of suppressing gas intrusion from the outside.
- the base portion is formed by uniformly mixing a gas absorbent (synthetic zeolite) pulverized into a resin (epoxy resin). Is not limited to this.
- a region P where the gas absorbent pulverized into particles in the epoxy resin is not mixed is formed in the vicinity of the outer peripheral surface 120f of the base portion 120.
- the base portion 120 may be molded so as to have it. Even when configured as in the fifth modification, the resin 15 does not exist in the vicinity of the outer peripheral surface 120f of the base portion 120 as compared with the internal structure of the base portion 10 shown in FIG.
- the low molecular weight siloxane and the volatile organic gas from the outside are prevented from entering the resin 15.
- a gas barrier layer on the outer peripheral surface 120f in the same manner as in the first embodiment, the effect of suppressing gas intrusion from the outside of the package can be further enhanced.
- the present invention is not limited to this. That is, in the present invention, the gas barrier layer may be provided only on either the base portion or the cap portion.
- the gas barrier layer 17 is provided on the outer surface of the base portion.
- the present invention is not limited to this.
- the gas barrier layer may be provided on the surface of the base portion that contacts the space in the package (the front surface of the header portion and the front surface and the upper surface of the pedestal portion).
- a gas barrier layer may be provided on the surface of the cap portion on the side in contact with the space in the package (the inner surface of the cap portion).
- the gas barrier layer is made of SiO 2.
- the present invention is not limited to this.
- the gas barrier layer may be formed using a dielectric film such as Al 2 O 3 or ZrO 2 .
- the metal oxide film also serving as the gas barrier layer 33 serves as an antireflection layer.
- the gas barrier layer 33 is composed of a metal oxide film as an antireflection layer, it is preferably formed on both the inner surface and the outer surface of the light transmitting portion 35 of the cap portion 30 shown in FIG. .
- the present invention in addition to using the base portion and the cap portion in which the gas absorbent is mixed into the resin, the gas absorbent may be installed in an empty space in the package.
- the present invention is not limited to this.
- a part (front end side) of the first heat radiating portion 11f is outward from the outer peripheral surface 10f of the base portion 10 (B2 side or B1 side). It may protrude and extend.
- the width of the first heat radiating portion 11f is W9 (W9> W3 (see FIG. 4)).
- the first heat radiating portion 11f is not exposed behind the rear surface 10d, and all the portions extend from the inside of the base portion 10 to the outer side through the outer peripheral surface 10f in the lateral direction (B direction). Also good.
- the cap portion 30 can be fitted as in the first embodiment by leaving a region where the heat radiating portion is not formed on the front side of the outer peripheral surface 10f of the base portion 10. Thereby, the blue-violet semiconductor laser device 20 can be sealed.
- the example in which the first heat radiating portion 211f is bent upward (C2 direction in FIG. 11) is shown.
- the first heat radiating portion 211f is bent downward (C1 direction) to radiate heat.
- the part 11d may be configured.
- connection portion 311c In the third embodiment, an example in which the end portion of the connection portion 311c is bent upward (C2 direction in FIG. 13) is shown. However, in the present invention, the end region of the connection portion 311c is downward (C1 direction).
- the connecting portion may be formed by bending.
- the connecting portion is bent and the heat radiating portion is extended upward.
- the heat radiating portion may be bent and extended in the direction in which the heat radiating portion is bent.
- the lead terminals 712 to 715 are arranged side by side on the same surface on the surface of the lead frame (planar portion 401) having the lead terminals 711. Then, for example, the lead terminals 714 and 715 may be further laminated on the lead terminals 712 and 713. Accordingly, since the plurality of lead terminals are not arranged so as to extend in the width direction of the semiconductor laser device, the width of the three-wavelength semiconductor laser device can be reduced.
- the base part 10 is a substantially disc in which the base part 10b does not protrude. It may have a shape.
- the semiconductor laser device may be configured without covering the base portion with the cap portion.
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Abstract
Description
まず、図1~図5を参照して、本発明の第1実施形態による半導体レーザ装置100の構造について説明する。なお、半導体レーザ装置100は、本発明の「半導体発光装置」の一例である。
図8を参照して、第1実施形態の第1変形例について説明する。この第1実施形態の第1変形例による半導体レーザ装置100aでは、第1実施形態と異なり、キャップ部130と嵌合する部分のベース部110の外周面110fが、後方から前方に向かって先細りするテーパ形状を有している。また、図中において、第1実施形態と同様の構成には、第1実施形態と同じ符号を付して図示している。
次に、第1実施形態の第2変形例について説明する。この第1実施形態の第2変形例による半導体レーザ装置100bでは、図9に示すように、第1実施形態と異なり、前端領域11bとリード端子11とが分離されている。なお、図中において、第1実施形態と同様の構成には同じ符号を付して図示している。
次に、第1実施形態の第3変形例について説明する。この第1実施形態の第3変形例による半導体レーザ装置100cでは、図10に示すように、第1実施形態と異なり、前端領域11bの両側に配置された放熱部11dが前方に延びた第2放熱部11gを有していない。なお、図中において、第1実施形態と同様の構成には同じ符号を付して図示している。また、ベース部10に嵌合するキャップ部30の図示を省略している。
次に、本発明の第2実施形態による半導体レーザ装置200について説明する。この半導体レーザ装置200では、図11に示すように、ベース部10の後面10dから露出した接続部11cの後端領域11hが、後面10dと略平行な方向である上方(C2方向)に折り曲げられて配置されている。また、半導体レーザ装置200のその他の構成は、第1実施形態の第3変形例と同様であって、図中において、第1実施形態の第3変形例と同様の構成には同じ符号を付して図示している。
次に、第2実施形態の変形例による半導体レーザ装置200aについて説明する。この半導体レーザ装置200aでは、図12に示すように、第2実施形態の半導体レーザ装置200と比べて、上方に折り曲げられた第1放熱部211fから前方に延びる第2放熱部211gが形成されている以外は、同様の構成を備えている。なお、図中において、第2実施形態と同様の構成には同じ符号を付して図示している。
次に、第3実施形態による半導体レーザ装置300について説明する。この半導体レーザ装置300では、図13に示すように、接続部311cの端部領域が上方(C2方向)に折り曲げられている以外は、半導体レーザ装置100と同様の構成を備えており、図中において、第1実施形態と同様の構成には同じ符号を付して図示している。
図15~図17を参照して、第4実施形態について説明する。この第4実施形態による半導体レーザ装置400では、第1実施形態と異なり、リード端子11とリード端子12および13とが異なる高さ位置に形成されている場合について説明する。なお、図15では、リードフレームの詳細な構造を説明するために、ベース部10(図16参照)の外形形状を破線で示している。また、図16は、図15の490-490線に沿った断面においてベース部10を見た図である。なお、図中において、第1実施形態と同様の構成には同じ符号を付して図示している。なお、リード端子12および13は、本発明の「第2リード端子」の一例である。
図18および図19を参照して、第5実施形態について説明する。この第5実施形態による半導体レーザ装置500では、第1実施形態と異なり、一方の接続部511cがリード端子511を兼用している。なお、図18では、リードフレームの詳細な構造を説明するために、前端領域11bが取り付けられるベース部10(図19参照)の外形形状を破線で示している。また、図中において、第1実施形態と同様の構成には同じ符号を付して図示している。なお、リード端子511は、本発明の「第1リード端子」の一例である。
次に、第5実施形態の変形例について説明する。この第5実施形態の変形例による半導体レーザ装置500aでは、図20に示すように、第5実施形態の半導体レーザ装置500と比べて放熱部511dが形成されていない以外は同様の構成を備えており、図中において、第5実施形態と同様の構成には同じ符号を付して図示している。
図21を参照して、第6実施形態について説明する。この第6実施形態による半導体レーザ装置600では、第1実施形態と異なり、ヘッダ部610aおよび台座部610bの断面が幅方向(B方向)に引き延ばされた長丸形状を有するベース部610を有し、ベース部610のB方向の両端部における外周面610fには、エッジ(角部)などが形成されていない。また、キャップ部630についても、底面部630bおよび底面部630bから筒状に延びる側壁部630aの内周が、ベース部610(ヘッダ部610a)の断面形状(長丸形状)に対応した断面を有するように樹脂成型されている。これにより、キャップ部630の内側面630cが、ベース部610の外周面610fを完全に取り囲んだ状態で嵌合する。また、図中において、第1実施形態と同様の構成には、第1実施形態と同じ符号を付して図示している。
まず、図22および図23を参照して、第7実施形態について説明する。この第7実施形態による3波長半導体レーザ装置700では、第6実施形態と異なり、互いに異なる波長のレーザ光を出射する複数の半導体レーザ素子を搭載して集積型の半導体レーザ装置を構成している。また、図中において、第6実施形態と同様の構成には、第6実施形態と同じ符号を付して図示している。
図22および図24を参照して、第7実施形態の変形例について説明する。この第7実施形態の変形例による3波長半導体レーザ装置705では、第7実施形態と異なり、リード端子711とリード端子712~715とが異なる高さ位置に形成されている。つまり、リード端子712~715は、平面部401上に形成されたエポキシ樹脂からなる絶縁膜402を介してリード端子711(前端領域711b)とは異なる高さ方向(C方向)の平面上に形成されている。したがって、平面部401(リード端子711)とリード端子712~715とは、互いに絶縁された状態で、かつ、高さ方向にも異なった位置で、ベース部610を前方(A1側)から後方(A2側)に貫通している。なお、リード端子712~715は、本発明の「第2リード端子」の一例である。
図23および図25を参照して、本発明の第8実施形態による光ピックアップ装置850について説明する。なお、光ピックアップ装置850は、本発明の「光装置」の一例である。
図25および図26を参照して、本発明の第9実施形態による光ディスク装置900について説明する。なお、光ディスク装置900は、本発明の「光装置」の一例である。
図23、図27および図28を参照して、本発明の第10実施形態によるプロジェクタ装置950の構成について説明する。なお、プロジェクタ装置950では、RGB3波長半導体レーザ装置910を構成する個々の半導体レーザ素子が略同時に点灯される例について説明する。なお、RGB3波長半導体レーザ装置910は、本発明の「半導体発光装置」の一例であり、プロジェクタ装置950は、本発明の「光装置」の一例である。
図27、図29および図30を参照して、本発明の第11実施形態によるプロジェクタ装置980の構成について説明する。なお、プロジェクタ装置980では、RGB3波長半導体レーザ装置910を構成する個々の半導体レーザ素子が時系列的に点灯される例について説明する。なお、プロジェクタ装置980は、本発明の「光装置」の一例である。
Claims (20)
- 半導体発光素子と、
前記半導体発光素子を封止するパッケージとを備え、
前記パッケージは、前記半導体発光素子が取り付けられるベース部と、前記ベース部に取り付けられ、前記半導体発光素子を覆うキャップ部とを含み、
前記ベース部および前記キャップ部の少なくともいずれか一方は、樹脂とガス吸収剤との混合物により形成されている、半導体発光装置。 - 前記キャップ部は、前記混合物により形成され、前記半導体発光素子から出射された光が外部に向けて透過する光透過部を有し、
前記樹脂は、透光性を有し、
前記ガス吸収剤は、前記光透過部以外の前記キャップ部を構成する前記混合物中に混入されている、請求項1に記載の半導体発光装置。 - 前記ガス吸収剤は、合成ゼオライト、シリカゲルおよび活性炭の少なくともいずれかである、請求項1に記載の半導体発光装置。
- 前記混合物により形成されている前記ベース部および前記キャップ部の少なくともいずれか一方の表面に、ガスバリア層が形成されている、請求項1に記載の半導体発光装置。
- 前記ベース部に取り付けられ、同一平面上に配置された複数のリード端子と、
前記半導体発光素子が載置される素子設置部と一体的に形成された放熱部とをさらに備え、
前記放熱部は、前記複数のリード端子の外側に配置されている、請求項1に記載の半導体発光装置。 - 前記放熱部は、前記同一平面上に配置されている、請求項5に記載の半導体発光装置。
- 前記放熱部と前記素子設置部とは、前記ベース部の前面側から後面側に延びる接続部によって接続されており、
前記放熱部と前記接続部との接続領域は、前記ベース部の後面側に配置されている、請求項5に記載の半導体発光装置。 - 前記接続領域は、少なくとも一部が前記ベース部の後面から露出している、請求項7に記載の半導体発光装置。
- 前記放熱部は、前記キャップ部の外側に配置されている、請求項7に記載の半導体発光装置。
- 前記放熱部は、前記ベース部の両側方のうちの少なくとも一方側方において、前記複数のリード端子の外側に配置されている、請求項5に記載の半導体発光装置。
- 前記リード端子は、前記ベース部の後面に取り付けられた第1リード端子を含み、
前記素子設置部は、前記第1リード端子と一体的に形成されている、請求項5に記載の半導体発光装置。 - 前記リード端子は、前記ベース部の後面に取り付けられた第2リード端子を含み、
前記素子設置部と前記第2リード端子とは、異なる平面上に配置されている、請求項5に記載の半導体発光装置。 - 前記接続部および前記放熱部の少なくとも一部が折り曲げられている、請求項5に記載の半導体発光装置。
- 前記接続部および前記放熱部の少なくとも一部は、前記ベース部の後面と平行な方向に折り曲げられている、請求項13に記載の半導体発光装置。
- 前記放熱部の幅は、前記リード端子の幅よりも大きい、請求項5に記載の半導体発光装置。
- 前記樹脂は、伸縮性を有し、
前記半導体発光素子は、前記ベース部と前記キャップ部とが嵌合することにより、封止されている、請求項1に記載の半導体発光装置。 - 前記ベース部および前記キャップ部は、共に前記樹脂と前記ガス吸収剤との混合物により形成されており、
前記キャップ部を構成する樹脂に混入される前記ガス吸収剤の前記樹脂に対する割合は、前記ベース部を構成する樹脂に混入される前記ガス吸収剤の前記樹脂に対する割合よりも小さい、請求項16に記載の半導体発光装置。 - 前記ベース部は、前記ベース部の後面側から前面側に向かって先細りする外周面を有し、
前記キャップ部は、前記ベース部の先細りする前記外周面に嵌合する、請求項16に記載の半導体発光装置。 - ベース部およびキャップ部を形成する工程と、
半導体発光素子を前記ベース部に取り付ける工程と、
前記ベース部と前記キャップ部とを嵌合することにより、前記半導体発光素子を封止する工程とを備え、
前記ベース部および前記キャップ部を形成する工程は、前記ベース部および前記キャップ部の少なくともいずれか一方を、樹脂とガス吸収剤との混合物を成型することにより形成する工程を含む、半導体発光装置の製造方法。 - 半導体発光素子と、前記半導体発光素子を封止するパッケージとを含む半導体発光装置と、
前記半導体発光装置の出射光を制御する光学系とを備え、
前記パッケージは、前記半導体発光素子が取り付けられるベース部と、前記ベース部に取り付けられ、前記半導体発光素子を覆うキャップ部とを有し、
前記ベース部および前記キャップ部の少なくともいずれか一方は、樹脂とガス吸収剤との混合物により形成されている、光装置。
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JPH06338569A (ja) * | 1993-05-31 | 1994-12-06 | Mitsubishi Electric Corp | 半導体光デバイス用パッケージ |
JP2002329895A (ja) * | 2001-04-27 | 2002-11-15 | Nichia Chem Ind Ltd | 発光装置 |
JP2007048832A (ja) * | 2005-08-08 | 2007-02-22 | Mitsubishi Electric Corp | 光半導体デバイス |
JP2008263047A (ja) * | 2007-04-12 | 2008-10-30 | Shinko Electric Ind Co Ltd | 光半導体素子用キャップ、光半導体素子用パッケージ及び光ピックアップ装置 |
Family Cites Families (1)
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KR100568275B1 (ko) * | 2003-09-19 | 2006-04-05 | 삼성전기주식회사 | Pcb타입 리드프레임을 갖는 반도체 레이저 다이오드장치 |
-
2011
- 2011-02-04 WO PCT/JP2011/052356 patent/WO2011096512A1/ja active Application Filing
- 2011-02-04 CN CN2011800085165A patent/CN102782967A/zh active Pending
- 2011-02-04 US US13/576,954 patent/US20120299052A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338569A (ja) * | 1993-05-31 | 1994-12-06 | Mitsubishi Electric Corp | 半導体光デバイス用パッケージ |
JP2002329895A (ja) * | 2001-04-27 | 2002-11-15 | Nichia Chem Ind Ltd | 発光装置 |
JP2007048832A (ja) * | 2005-08-08 | 2007-02-22 | Mitsubishi Electric Corp | 光半導体デバイス |
JP2008263047A (ja) * | 2007-04-12 | 2008-10-30 | Shinko Electric Ind Co Ltd | 光半導体素子用キャップ、光半導体素子用パッケージ及び光ピックアップ装置 |
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US20120299052A1 (en) | 2012-11-29 |
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