WO2011072493A1 - 一种化学机械抛光液 - Google Patents

一种化学机械抛光液 Download PDF

Info

Publication number
WO2011072493A1
WO2011072493A1 PCT/CN2010/002064 CN2010002064W WO2011072493A1 WO 2011072493 A1 WO2011072493 A1 WO 2011072493A1 CN 2010002064 W CN2010002064 W CN 2010002064W WO 2011072493 A1 WO2011072493 A1 WO 2011072493A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing liquid
mechanical polishing
chemical mechanical
liquid according
cellulose
Prior art date
Application number
PCT/CN2010/002064
Other languages
English (en)
French (fr)
Inventor
荆建芬
蔡鑫元
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Publication of WO2011072493A1 publication Critical patent/WO2011072493A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing liquid.
  • the chemical mechanical polishing liquid used is mainly classified into an acidic and an alkaline slurry.
  • the stability of the alkaline slurry is relatively good, but there is no suitable oxidizing agent, and the problem of surface cloud point and slight scratching is easily caused during the polishing process.
  • Acidic pastes offer certain advantages in this regard.
  • the size of the abrasive particles in the acid slurry gradually grows under the action of the chemical components in the slurry as the storage time increases. When the particle size is larger than 120 nm, sedimentation stratification and the like may occur, which seriously affects the polishing quality and causes product failure. Therefore, controlling the growth of abrasive particles and prolonging the service life are problems that the acid slurry is eager to solve.
  • the chemical mechanical polishing liquids contain abrasive particles, and most of them use nano silica sol as abrasive particles. There are many reports on the stability of silica sols. However, the literature on inhibiting the growth of abrasive grain size and extending the stability of chemical mechanical polishing fluids in the CMP field has not been reported. Summary of invention
  • the technical problem to be solved by the present invention is to provide a chemical mechanical polishing liquid having higher stability in order to overcome the problem of storage stability of the acidic chemical mechanical polishing liquid in the prior art.
  • the chemical mechanical polishing liquid of the present invention contains abrasive particles, a polymer and water, and further contains a stabilizer for improving the stability of the polishing slurry.
  • the polymer is a cellulose-based polymer, preferably methylcellulose, ethylcellulose, hydroxymethylcellulose, hydroxyethylcellulose, methylhydroxyethylcellulose, ethylhydroxyl Cellulose, hydroxypropylcellulose, carboxymethylcellulose.
  • the cellulose preferably has a molecular weight of 10,000 to 2,000,000. More preferably 50,000 to 500,000.
  • the content of the cellulose is preferably 0.0001 to 1% by mass, more preferably 0.001 to 0.5% by mass.
  • the additive for improving the stability of the polishing slurry is a vinylpyrrolidone polymer.
  • the vinylpyrrolidone polymer is a copolymer of polyvinylpyrrolidone and/or vinylpyrrolidone with vinyl acetate.
  • the copolymer of polyvinylpyrrolidone or vinylpyrrolidone and vinyl acetate preferably has a molecular weight of from 800 to 100,000. More preferably 1000 50000.
  • the copolymer of polyvinylpyrrolidone and/or vinylpyrrolidone and vinyl acetate is preferably contained in an amount of 0.001 to 3% by mass. More preferably, the mass percentage is 0.005 to 1%.
  • the abrasive particles are various abrasive particles conventionally used in the art, preferably abrasive particles having a surface negatively charged.
  • the surface negatively charged abrasive particles are silica, abrasive particles coated with silica and negatively charged polymeric abrasive particles.
  • the particle size of the abrasive particles is preferably from 20 to 150 nm, more preferably from 30 to 120 nm.
  • the content of the abrasive particles is 0.1 to 30% by mass.
  • the chemical mechanical polishing liquid of the present invention may further contain other additives commonly used in the art, such as an oxidizing agent, a film former, a complexing agent, etc., for polishing purposes.
  • the pH of the chemical mechanical polishing liquid is preferably from 2 to 7.
  • the polishing liquid of the present invention is simply and uniformly mixed by the above components, and then adjusted to a pH adjusting agent to It can be prepared at a suitable pH.
  • the pH adjusting agent may be selected from conventional pH adjusting agents in the art, such as potassium hydroxide, ammonia water, and nitric acid.
  • the reagents and raw materials used are commercially available.
  • the positive progress of the present invention is that in the polishing liquid of the present invention, the particle diameter of the abrasive particles can be kept stable at 40C.
  • the chemical mechanical polishing liquid of the present invention has high stability, long storage time and long service life. Summary of the invention
  • Table 1 shows the chemical mechanical polishing liquids of the present invention Examples 1 to 9, according to the formula in the table, the components are simply and uniformly mixed, the balance is water, and then adjusted to a suitable pH value by using potassium hydroxide, ammonia water and nitric acid, The polishing liquid of each example can be obtained.
  • Chemical mechanical polishing liquid of the present invention Examples 1 to 9 are simply and uniformly mixed, the balance is water, and then adjusted to a suitable pH value by using potassium hydroxide, ammonia water and nitric acid, The polishing liquid of each example can be obtained.
  • Table 2 shows the comparison throwing liquid 1 and the polishing liquid 10 ⁇ 15 of the present invention, according to the formula in the table, the components are simply and uniformly mixed, the balance is water, and then adjusted to the appropriate amount with potassium hydroxide, ammonia water and nitric acid. At each pH, each polishing liquid can be obtained.
  • the initial silica abrasive particles in each of the polishing liquids were both 75 nm, and the particle diameters were measured after being placed in an oven at 40 ° C as shown in Table 3.
  • Table 2 Comparative polishing liquid 1 and chemical mechanical polishing liquid of the present invention Examples 10 to 15
  • the stability of the abrasive particles is increased after the addition of the stabilizer to the polishing liquid of the present invention as compared with the comparative polishing liquid, and the polishing liquid can be stabilized for a long period of time when the stabilizer and the polymer reach a certain ratio.
  • the amount required for the stabilizer increases as the polymer and abrasive particles increase.
  • the polishing liquid of the present invention has high stability, long storage time and long service life.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

一种化学机械抛光液
技术领域
本发明涉及一种化学机械抛光液。 技术背景
在半导体工业中的化学机械抛光（CMP)领域， 使用的化学机械抛光液 主要分酸性和碱性浆料两种。 其中， 碱性浆料的稳定性比较好， 但存在没有 合适的氧化剂， 以及在抛光过程中易造成表面浊点和轻微划伤的问题。酸性 浆料在这方面表现出了一定的优势。但是酸性浆料中磨料颗粒的尺寸会随着 存储时间的延长， 在浆料中化学组分的作用下逐渐长大。 当粒径大于 120纳 米以后， 会出现沉降分层等现象， 严重影响抛光质量， 造成产品失效。 所以 控制磨料粒子的长大， 延长使用寿命是酸性浆料急于解决的问题。
化学机械抛光液均含有研磨颗粒，大部分采用纳米二氧化硅溶胶作为磨 料颗粒。 关于二氧化硅溶胶的稳定性有很多文献报道。 但在 CMP领域关于 抑制磨料颗粒粒径增长， 延长化学机械抛光液稳定性的文献还未见报道。 发明概要
在抛光液中，还常常需要加入一些聚合物来调节抛光液的粘度和抛光过 程中的摩擦力, 但酸性抛光液中加入这类聚合物会导致研磨颗粒、 尤其是带 负电的研磨颗粒的聚结。 因此， 本发明所要解决的技术问题是为了克服现有 技术中酸性化学机械抛光液的存储稳定性的问题，而提供一种具有较高稳定 性的化学机械抛光液。
1
确认本 本发明的化学机械抛光液含有研磨颗粒、 一种聚合物和水， 其还含有一 种用于提高抛光浆料稳定性的稳定剂。
其中， 所述的聚合物为纤维素类聚合物， 优选为甲基纤维素、 乙基纤维 素、羟甲基纤维素、羟乙基纤维素、 甲基羟乙基纤维素、 乙基羟乙基纤维素、 羟丙基纤维素、 羧甲基纤维素。 所述的纤维素的分子量较佳为 10000〜 2000000。 更佳为 50000〜500000。 所述的纤维素的含量较佳为质量百分数 0.0001-1%, 更佳为质量百分数 0.001~0.5%。
其中，所述的提高抛光浆料稳定性的添加剂为乙烯基吡咯垸酮类聚合物。 所述的乙烯基吡咯烷酮类聚合物为聚乙烯吡咯垸酮和 /或乙烯基吡咯垸酮 与醋酸乙烯酯的共聚物。所述的聚乙烯吡咯垸酮或乙烯基吡咯垸酮与醋酸乙 烯酯的共聚物的分子量较佳为 800~100000。 更佳为 1000 50000。
所述的聚乙烯吡咯垸酮和 /或乙烯基吡咯垸酮与醋酸乙烯酯的共聚物的含 量较佳为质量百分比 0.001〜3%。 更佳为质量百分比 0.005~1%。
其中， 所述研磨颗粒为本领域常规使用的各种研磨颗粒， 优选为表面带 负电荷的研磨颗粒。
所述的表面带负电荷的研磨颗粒为二氧化硅， 表面包裹二氧化硅的研磨 颗粒和带负电的高分子研磨颗粒。所述的研磨颗粒的粒径较佳为 20~150nm， 更佳为 30〜120nm。 所述的研磨颗粒的含量为质量百分比 0.1〜30%。
本发明的化学机械抛光液还可含有本领域常用的其他添加剂， 如氧化 剂、 成膜剂、 络合剂等以达到抛光目的。
本发明中， 所述的化学机械抛光液的 pH值较佳的为 2〜7。
本发明的抛光液由上述成分简单均匀混合， 之后采用 pH调节剂调节至 合适 pH值即可制得。 pH调节剂可选用本领域常规 pH调节剂，如氢氧化钾、 氨水和硝酸等。 本发明中， 所用试剂及原料均市售可得。
本发明的积极进步效果在于:本发明的抛光液中，研磨颗粒的粒径在 40C 时也能保持稳定。本发明的化学机械抛光液具有较高的稳定性、较长的存储 时间和使用寿命。 发明内容
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在 所述的实施例范围之中。
表 1给出了本发明的化学机械抛光液实施例 1〜9， 按表中配方， 将各成 分简单均匀混合，余量为水，之后采用氢氧化钾、氨水和硝酸调节至合适 pH 值， 即可制得各实施例抛光液。 本发明的化学机械抛光液实施例 1~9
Figure imgf000004_0001
乙烯基吡咯烷酮 /醋酸
乙基羟乙基纤维素 乙烯酯共聚物
6 10 SiO2(20nm) 0.005 (Mw=500000) 0.1 (Mw=800) 5 覆盖 Si02的 羟丙基纤维素 聚乙烯吡咯垸酮
7 0.1 A1203(45nm) 0.001 (Mw=l 000000) 0.005 (Mw= 100000) 4 乙烯基吡咯烷酮 /醋酸 带负电的聚苯 羧甲基纤维素 乙烯酯共聚物
8 30 乙烯 （150nm) 0.0001 (Mw=2000000) 0.001 (Mw=50000) 7 乙基纤维素 聚乙烯吡咯烷酮
1 SiO2(60nm) 0.05 (Mw= 100000) 0.1 (Mw= 10000)
成膜剂- 络合剂： 氧化剂：
9 0.01%苯并三氮唑 1%甘氨酸 1%双氧水 5
效果实施例
表 2给出了对比抛 ^；液 1和本发明的抛光液 10〜15， 按表中配方， 将各 成分简单均匀混合， 余量为水， 之后采用氢氧化钾、 氨水和硝酸调节至合适 pH值，即可制得各抛光液。各抛光液中初始的二氧化硅研磨颗粒均为 75nm， 在 40°C烘箱中放置后测量粒径如表 3所示。 表 2 对比抛光液 1及本发明的化学机械抛光液实施例 10〜15
Figure imgf000005_0001
羟丙基纤维素 聚乙烯吡咯烷酮
2 Si02(75nm) 0. 1 (Mw=300000) 0.1 (Mw=1000) 5 乙烯基吡咯烷酮 /醋酸 羟丙基纤维素 乙烯酯共聚物
1 Si02(75nm) 0. 1 (Mw=300000) 0.2 (Mw=3000) 5
对比抛光液 1和本发明的抛光液 10-15的研磨颗粒粒径变化
Figure imgf000006_0001
由表 3可见， 与对比抛光液相比， 本发明的拋光液中添加了稳定剂后， 研磨颗粒的稳定性增加， 当稳定剂与聚合物达到一定比例后， 能使抛光液长 时间稳定。稳定剂所需的量随聚合物和研磨颗粒的增加而增加。 本发明的抛 光液具有较高的稳定性、 较长的存储时间和使用寿命。

Claims

权利要求
1. 一种化学机械抛光液， 其含有研磨颗粒、 一种聚合物和水， 其特征在于: 还含一种用于提高抛光浆料稳定性的稳定剂。
2. 如权利要求 1所述的化学机械抛光液， 其特征在于： 所述的稳定剂为乙 烯基吡咯垸酮类聚合物。
3. 如权利要求 1所述的化学机械抛光液， 其特征在于： 所述的乙烯基吡咯 烷酮类聚合物为聚乙烯吡咯垸酮和 /或乙烯基吡咯烷酮与醋酸乙烯酯的共 聚物。
4. 如权利要求 2所述的化学机械抛光液， 其特征在于： 所述的乙烯基吡咯 嫁酮类聚合物的分子量为 800〜100000。
5. 如权利要求 4所述的化学机械抛光液， 其特征在于： 所述的乙烯基吡咯 烷酮类聚合物的分子量为 1000〜50000。
6. 如权利要求 1所述的化学机械抛光液， 其特征在于： 所述的稳定剂的含 量为质量百分比 0.001〜3%。
7. 如权利要求 6所述的化学机械抛光液， 其特征在于： 所述的稳定剂的含 量为质量百分比 0.005~1%0
8. 如权利要求 1 所述化学机械抛光液， 其特征在于： 所述研磨颗粒为表面 带负电荷的研磨颗粒。
9. 如权利要求 8所述的化学机械抛光液， 其特征在于： 所述的 磨颗粒为 二氧化硅、表面包裹二氧化硅的研磨颗粒和 /或带负电的高分子研磨颗粒。
10.如权利要求 1 所述的抛光液， 其特征在于： 所述的研磨颗粒的粒径为 20〜150nm。
.如权利要求 10所述的抛光液， 其特征在于： 所述的研磨颗粒的粒径为 30〜120亂
.如权利要求 1所述的化学机械抛光液， 其特征在于： 所述的研磨颗粒的 含量为质量百分比 0.1〜30%。
.如权利要求 1所述的化学机械抛光液， 其特征在于： 所述的聚合物为纤 维素。
.如权利要求 13所述的化学机械抛光液， 其特征在于： 所述的纤维素为甲 基纤维素、 乙基纤维素、 羟甲基纤维素、 羟乙基纤维素、 甲基羟乙基纤 维素、 乙基羟乙基纤维素、 羟丙基纤维素和羧甲基纤维素中的一种或多 种。
.如权利要求 13所述的化学机械抛光液， 其特征在于： 所述的纤维素的分 子量为 10000〜2000000。
.如权利要求 15所述的化学机械抛光液， 其特征在于： 所述的纤维素的分 子量为 50000〜500000。
.如权利要求 13所述的化学机械抛光液， 其特征在于： 所述的纤维素的含 量为质量百分数 0.0001~1%
fl权利要求 17所述的化学机械抛光液， 其特征在于： 所述的纤维素的含 量为质量百分数 0.001~0.5%。
.如权利要求 1所述的化学机械抛光液， 其特征在于： 所述的化学机械抛 光液的 pH值为 2〜7。
PCT/CN2010/002064 2009-12-18 2010-12-17 一种化学机械抛光液 WO2011072493A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2009102013787A CN102101976A (zh) 2009-12-18 2009-12-18 一种化学机械抛光液
CN200910201378.7 2009-12-18

Publications (1)

Publication Number Publication Date
WO2011072493A1 true WO2011072493A1 (zh) 2011-06-23

Family

ID=44155052

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/002064 WO2011072493A1 (zh) 2009-12-18 2010-12-17 一种化学机械抛光液

Country Status (2)

Country Link
CN (1) CN102101976A (zh)
WO (1) WO2011072493A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109971358A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种化学机械抛光液

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101052691A (zh) * 2004-09-08 2007-10-10 普莱克斯S.T.技术有限公司 含有金属酸根改性二氧化硅颗粒的含水浆料
CN101130667A (zh) * 2006-08-24 2008-02-27 福吉米股份有限公司 抛光用组合物以及抛光方法
WO2008095078A1 (en) * 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
CN101457126A (zh) * 2007-12-14 2009-06-17 安集微电子（上海）有限公司 一种化学机械抛光液

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1063205C (zh) * 1998-04-16 2001-03-14 华东理工大学 纳米二氧化硅抛光剂及其制备方法
ATE292167T1 (de) * 1999-08-13 2005-04-15 Cabot Microelectronics Corp Poliersystem mit stopmittel und verfahren zu seiner verwendung
KR100457743B1 (ko) * 2002-05-17 2004-11-18 주식회사 하이닉스반도체 산화막용 ｃｍｐ 슬러리 및 이를 이용한 반도체 소자의형성 방법
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP2004342751A (ja) * 2003-05-14 2004-12-02 Toshiba Corp Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
KR100599327B1 (ko) * 2004-03-12 2006-07-19 주식회사 케이씨텍 Ｃｍｐ용 슬러리 및 그의 제조법
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
CN101077961B (zh) * 2006-05-26 2011-11-09 安集微电子（上海）有限公司 用于精细表面平整处理的抛光液及其使用方法
SG175636A1 (en) * 2006-10-16 2011-11-28 Cabot Microelectronics Corp Glass polishing compositions and methods
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
CN101550319A (zh) * 2008-04-03 2009-10-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN101451046B (zh) * 2008-12-30 2012-10-10 清华大学 一种用于硅晶片抛光的抛光组合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101052691A (zh) * 2004-09-08 2007-10-10 普莱克斯S.T.技术有限公司 含有金属酸根改性二氧化硅颗粒的含水浆料
CN101130667A (zh) * 2006-08-24 2008-02-27 福吉米股份有限公司 抛光用组合物以及抛光方法
WO2008095078A1 (en) * 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
CN101457126A (zh) * 2007-12-14 2009-06-17 安集微电子（上海）有限公司 一种化学机械抛光液

Also Published As

Publication number Publication date
CN102101976A (zh) 2011-06-22

Similar Documents

Publication Publication Date Title
JP6762390B2 (ja) 研磨用組成物、研磨方法および基板の製造方法
TWI244465B (en) Aqueous dispersion
JP5941612B2 (ja) 研磨用組成物
TW200535203A (en) Barrier polishing solution
JP7032327B2 (ja) 化学－機械的研磨用スラリー組成物
WO2013191139A1 (ja) 研磨用組成物及びそれを用いた基板の製造方法
WO2016101332A1 (zh) 一种化学机械抛光液
JPWO2010122985A1 (ja) 半導体基板用研磨液及び半導体基板の研磨方法
JP2007103515A (ja) 研磨方法
WO2011072493A1 (zh) 一种化学机械抛光液
TW201518488A (zh) 研磨用組成物及其製造方法
TW201513930A (zh) 無機顏料用高分子分散劑
JP7562089B2 (ja) 導電材分散液並びにこれを用いたリチウムイオン二次電池用正極及びリチウムイオン二次電池の製造方法
CN101451044B (zh) 一种化学机械抛光液
TW201623557A (zh) 一種化學機械拋光液及其應用
WO2016107413A1 (zh) 一种氮唑类化合物在提高化学机械抛光液稳定性中的应用
TW202102625A (zh) 用於拋光多層膜的化學機械拋光（cmp）漿料組合物及使用其的拋光方法
JP6559410B2 (ja) 研磨用組成物
WO2012132106A1 (ja) 研摩スラリー及びその研摩方法
JP7351697B2 (ja) シリカ粒子分散液及びその製造方法
JP2021153159A (ja) 研磨剤組成物
CN105778155B (zh) 一种包覆纳米材料的防老剂nbc及其制备方法
TWI821357B (zh) 化學機械研磨用氧化鋁研磨粒及其製造方法
CN105695983A (zh) 激光熔注用纳米碳化硅含胶浆料及其制备方法
JP7464201B2 (ja) シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10836932

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10836932

Country of ref document: EP

Kind code of ref document: A1