WO2012132106A1 - 研摩スラリー及びその研摩方法 - Google Patents
研摩スラリー及びその研摩方法 Download PDFInfo
- Publication number
- WO2012132106A1 WO2012132106A1 PCT/JP2011/077008 JP2011077008W WO2012132106A1 WO 2012132106 A1 WO2012132106 A1 WO 2012132106A1 JP 2011077008 W JP2011077008 W JP 2011077008W WO 2012132106 A1 WO2012132106 A1 WO 2012132106A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- boron compound
- polishing slurry
- slurry
- present
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 88
- 239000002002 slurry Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 6
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000006061 abrasive grain Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 abstract description 12
- 239000010980 sapphire Substances 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 229910000420 cerium oxide Inorganic materials 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 8
- 229910052810 boron oxide Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000004327 boric acid Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229960001922 sodium perborate Drugs 0.000 description 3
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VQTSAVIGVPAOQB-UHFFFAOYSA-N [B].[B].[B].[B].[Na] Chemical compound [B].[B].[B].[B].[Na] VQTSAVIGVPAOQB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a polishing slurry containing an inorganic boron compound, and more particularly to a polishing slurry suitable for polishing a substrate containing Al.
- a base material containing aluminum (hereinafter sometimes referred to as Al) such as a sapphire single crystal substrate has a very high base material hardness, so that a high polishing speed cannot be obtained even if polishing is performed.
- Al aluminum
- Patent Document 1 A base material containing aluminum (hereinafter sometimes referred to as Al)
- polishing may be performed using abrasive grains having a hardness higher than that of an object to be polished such as diamond (for example, Patent Document 2). In some cases, the surface roughness of the polished surface tends to decrease.
- Patent Document 3 a polishing method in which chemical mechanical polishing is performed with a polishing slurry made of a compound containing a specific element is known (for example, Patent Document 3).
- Patent Document 3 it is proposed to polish the surface of a substrate containing silicon using a compound having a boron atom in its chemical structure.
- a high-hardness base material containing Al such as a sapphire single crystal substrate, is polished at high speed to obtain a polished surface having high surface accuracy.
- the purpose is to provide a polishing technique that can be realized.
- the present inventor has found a phenomenon in which when a boron compound is an inorganic boron compound, a boron atom causes a chemical action on Al to remove Al at an atomic level.
- the present inventors have come up with the present invention by ascertaining that a substrate containing Al can be polished with high polishing speed and a polished surface with high accuracy.
- the present invention provides a polishing slurry for polishing a substrate containing aluminum, abrasive grains, an inorganic boron compound having a solubility in water at 20 ° C. of 0.1 g / 100 g-H 2 O or more, and water. It relates to a polishing slurry.
- an Al-containing base material can be polished to a very smooth polished surface at a high polishing rate, particularly for polishing a substrate containing aluminum oxide or a sapphire single crystal substrate. It is very suitable.
- the reason why the polishing slurry of the present invention can polish the base material containing aluminum at a high polishing speed and the polished surface with high accuracy is, for example, that a sapphire (Al 2 O 3 ) substrate is used with boron oxide or boric acid. It is thought that this is because the following chemical reaction occurs when polished. 2Al 2 O 3 + B 2 O 3 ⁇ Al 4 B 2 O 9 2Al 2 O 3 + 2H 3 BO 3 ⁇ Al 4 B 2 O 9 + 3H 2 O It is considered that such a chemical reaction causes the removal of aluminum at the atomic level from the sapphire (Al 2 O 3 ) substrate surface. Such a chemical reaction occurs in an inorganic boron compound, but does not occur in an organic boron compound. Therefore, the boron compound in the present invention needs to be an inorganic boron compound.
- the inorganic boron compound of the polishing slurry according to the present invention has a water solubility at 20 ° C. of 0.1 g / 100 g-H 2 O or more, and a water solubility of less than 0.1 g / 100 g-H 2 O. Abrasion flaws tend to occur due to the inorganic boron compound that has not dissolved.
- an inorganic boron compound boron oxide (B 2 O 3 ), boric acid (H 3 BO 3 ), sodium tetraborate, sodium perborate (sodium veloxoborate), or the like is preferable.
- the solubility of the inorganic boron compound is preferably 0.5 g / 100 g-H 2 O or more, and more preferably 1.0 g / 100 g-H 2 O or more.
- abrasives such as zirconium oxide, manganese oxide, cerium oxide, titanium oxide, zinc oxide, and silicon oxide can be used as the abrasive grains in the polishing slurry according to the present invention, but cerium oxide, titanium oxide, and zinc oxide are usable. Particularly preferred is cerium oxide.
- the particle size of the abrasive grains, the average particle diameter D 50 preferably from 0.02 ⁇ 3.0 [mu] m, more preferably 0.05 ⁇ 2.5 [mu] m. If it is less than 0.02 ⁇ m, the polishing speed tends to be low, and if it exceeds 3.0 ⁇ m, the accuracy (Ra) of the polishing surface tends to be poor.
- the content of the inorganic boron compound is preferably 0.1% by mass to 20% by mass in terms of boron atoms with respect to the polishing slurry. If the content is less than 0.1% by mass, the chemical action of boron atoms is too low to perform good polishing treatment, and if it exceeds 20% by mass, the abrasive grains tend to stay on the polished surface, and polishing is performed. The surface roughness tends to increase.
- the content of the inorganic boron compound is more preferably 0.5% by mass to 10% by mass, and further preferably 0.7% by mass to 5% by mass.
- a substrate containing aluminum is polished with abrasive grains, an inorganic boron compound having a solubility in water at 20 ° C. of 0.1 g / 100 g-H 2 O or more, and a polishing slurry containing water. It is preferable to do.
- polishing slurry according to the present invention it becomes possible to polish a high-hardness base material containing Al such as a sapphire single crystal substrate at high speed, and has high surface accuracy. A polished surface can be realized.
- cerium oxide slurry containing 10% by mass of cerium oxide as an abrasive (Mitsui Metal Mining Co., Ltd .: Milleak H510C, average particle size D 50 0.11 ⁇ m, CeO 2 / TREO 99% by mass or more)
- this oxidation A cerium slurry and boron oxide were dispersed in water to prepare a polishing slurry (cerium oxide concentration 5 mass%).
- a polishing slurry adjusted to each boron oxide content shown in Table 1 was prepared, and a polishing test for polishing a sapphire substrate was performed.
- the polishing test was performed with a polishing pad using a polishing tester (HSP-2I type, manufactured by Taito Seiki Co., Ltd.) while supplying each polishing slurry to the surface to be polished.
- the polishing slurry was supplied at a rate of 5 L / min.
- the sapphire substrate as the object to be polished had a diameter of 2 inches and a thickness of 0.25 mm (surface roughness Ra2 nm (20 mm) before the polishing treatment).
- a polishing pad made of polyurethane was used.
- the pressure of the polishing pad against the polishing surface was 570 g / cm 2
- the rotation speed of the polishing tester was set to 60 min ⁇ 1 (rpm), and polishing was performed for 180 minutes.
- Polishing speed was calculated by measuring the weight of the sapphire substrate before and after polishing to obtain a reduction amount by polishing, and converting the reduction amount into a thickness.
- the surface roughness Ra was measured on the surface of the substrate (measurement range: 10 ⁇ m ⁇ 10 ⁇ m) with an AFM (atomic force microscope: Nanoscope IIIa manufactured by Veeco).
- the polishing slurry (Table 1, Comparative Examples 1 to 3) deviated from the content range of the inorganic boron compound of the present invention and colloidal silica (silicon oxide / SiO 2 ) conventionally used for polishing treatment of sapphire substrates.
- the sapphire substrate was polished using the polishing slurry of Comparative Example 4) in Table 2.
- the polishing slurry of colloidal silica of Comparative Example 4 (average particle diameter D 50 0.08 ⁇ m, colloidal silica concentration 5 mass%) was used.
- Second Embodiment In this second embodiment, a case where boric acid, sodium tetraboron, and sodium perborate (sodium veloxoborate) are used as the inorganic boron compound will be described.
- the conditions for preparing the polishing slurry were the same as in Examples 1 to 9 of the first embodiment, and the content of the inorganic boron compound was adjusted to be the same as Example 5 (in terms of boron).
- the polishing test conditions were also the same as in the first embodiment.
- Table 3 shows the results of polishing speed and surface roughness of the polished surface.
- Table 3 shows the results of Example 5 and Comparative Example 1 of the first embodiment for comparison.
- the inorganic boron compound in this invention is not limited to a boron oxide, A various inorganic boron compound can be used.
- the titanium oxide used as the abrasive grains was (average particle size D 50 1.2 ⁇ m, manufactured by Kanto Chemical Co., Ltd.), and the zinc oxide was (average particle size D 50 0.3 ⁇ m, manufactured by Kanto Chemical Co., Ltd.).
- the conditions for preparing the polishing slurry were the same as in the first embodiment, and the content of the inorganic boron compound was adjusted to be the same amount as in Example 5 (in terms of boron).
- the polishing test conditions were also the same as in the first embodiment.
- the polishing slurry to which no inorganic boron compound was added was also evaluated. Table 4 shows the results of polishing speed and surface roughness of the polished surface. In Table 4, the results of Comparative Example 4 are also shown.
- the abrasive grain used for the polishing slurry of this invention is not limited to cerium oxide, and various abrasive grains can be applied.
- the present invention it is possible to polish a substrate containing Al, which is difficult to polish, particularly a sapphire single crystal substrate, at high speed and with high surface accuracy.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
2Al2O3+B2O3 → Al4B2O9
2Al2O3+2H3BO3 → Al4B2O9+3H2O
このような化学反応が生じることで、サファイア(Al2O3)基板表面から原子レベルでアルミニウムを除去するものとなっていることが考えられる。このような化学反応は無機ホウ素化合物では生じるが、有機ホウ素化合物では生じないため、本発明におけるホウ素化合物は無機ホウ素化合物である必要がある。
Claims (4)
- アルミニウムを含有する基材を研摩する研摩スラリーにおいて、
砥粒と、20℃での水に対する溶解度が0.1g/100g-H2O以上である無機ホウ素化合物と、水を含有することを特徴とする研摩スラリー。 - 無機ホウ素化合物の含有量は、研摩スラリーに対して、ホウ素原子に換算して0.1質量%~20質量%である請求項1に記載の研摩スラリー。
- 基材に含有されたアルミニウムは、酸化アルミニウムである請求項1または請求項2に記載の研摩スラリー。
- 砥粒と、20℃での水に対する溶解度が0.1g/100g-H2O以上である無機ホウ素化合物と、水を含有する研摩スラリーにより、
アルミニウムを含有する基材を研摩することを特徴とする研摩方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180069653.XA CN103492518A (zh) | 2011-03-29 | 2011-11-24 | 研磨浆料及其研磨方法 |
KR20137026528A KR20140019365A (ko) | 2011-03-29 | 2011-11-24 | 연마 슬러리 및 그것을 사용한 연마 방법 |
US14/005,070 US20140001153A1 (en) | 2011-03-29 | 2011-11-24 | Polishing slurry and polishing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011071790A JP2012206183A (ja) | 2011-03-29 | 2011-03-29 | 研摩スラリー及びその研摩方法 |
JP2011-071790 | 2011-03-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012132106A1 true WO2012132106A1 (ja) | 2012-10-04 |
Family
ID=46929904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/077008 WO2012132106A1 (ja) | 2011-03-29 | 2011-11-24 | 研摩スラリー及びその研摩方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140001153A1 (ja) |
JP (1) | JP2012206183A (ja) |
KR (1) | KR20140019365A (ja) |
CN (1) | CN103492518A (ja) |
WO (1) | WO2012132106A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104736296B (zh) * | 2012-08-24 | 2018-08-28 | 艺康美国股份有限公司 | 抛光蓝宝石表面的方法 |
SG11201507532PA (en) | 2013-03-15 | 2015-10-29 | Ecolab Usa Inc | Methods of polishing sapphire surfaces |
US10377014B2 (en) | 2017-02-28 | 2019-08-13 | Ecolab Usa Inc. | Increased wetting of colloidal silica as a polishing slurry |
CN108359383B (zh) * | 2018-01-25 | 2021-05-04 | 湖北海汇化工科技有限公司 | 一种蓝宝石材料表面精密加工专用耐磨纳米浆料 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0734063A (ja) * | 1993-04-21 | 1995-02-03 | Norton Co | 亜酸化ホウ素を含む組成物を用いて研磨する方法 |
JPH11322310A (ja) * | 1998-05-11 | 1999-11-24 | Sumitomo Electric Ind Ltd | 立方晶窒化ホウ素多結晶砥粒およびその製造方法 |
JP2004075467A (ja) * | 2002-08-20 | 2004-03-11 | Kansai Electric Power Co Inc:The | ホウ素亜酸化物粉末およびその焼結体の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5456735A (en) * | 1991-07-12 | 1995-10-10 | Norton Company | Method of abrading with boron suboxide (BxO) and the boron suboxide (BxO) articles and composition used |
US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
US6524168B2 (en) * | 2000-06-15 | 2003-02-25 | Rodel Holdings, Inc | Composition and method for polishing semiconductors |
US7456105B1 (en) * | 2002-12-17 | 2008-11-25 | Amd, Inc. | CMP metal polishing slurry and process with reduced solids concentration |
WO2009058274A1 (en) * | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc. | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
-
2011
- 2011-03-29 JP JP2011071790A patent/JP2012206183A/ja not_active Withdrawn
- 2011-11-24 CN CN201180069653.XA patent/CN103492518A/zh active Pending
- 2011-11-24 KR KR20137026528A patent/KR20140019365A/ko not_active Application Discontinuation
- 2011-11-24 WO PCT/JP2011/077008 patent/WO2012132106A1/ja active Application Filing
- 2011-11-24 US US14/005,070 patent/US20140001153A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0734063A (ja) * | 1993-04-21 | 1995-02-03 | Norton Co | 亜酸化ホウ素を含む組成物を用いて研磨する方法 |
JPH11322310A (ja) * | 1998-05-11 | 1999-11-24 | Sumitomo Electric Ind Ltd | 立方晶窒化ホウ素多結晶砥粒およびその製造方法 |
JP2004075467A (ja) * | 2002-08-20 | 2004-03-11 | Kansai Electric Power Co Inc:The | ホウ素亜酸化物粉末およびその焼結体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2012206183A (ja) | 2012-10-25 |
US20140001153A1 (en) | 2014-01-02 |
CN103492518A (zh) | 2014-01-01 |
KR20140019365A (ko) | 2014-02-14 |
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