WO2011071559A1 - Procédé de fabrication d'un écran miniature monolithique à diodes électroluminescentes sur un panneau à matrice active utilisant la technique des puces retournées et appareil d'affichage doté de l'écran miniature monolithique à diodes électroluminescentes - Google Patents

Procédé de fabrication d'un écran miniature monolithique à diodes électroluminescentes sur un panneau à matrice active utilisant la technique des puces retournées et appareil d'affichage doté de l'écran miniature monolithique à diodes électroluminescentes Download PDF

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Publication number
WO2011071559A1
WO2011071559A1 PCT/US2010/036900 US2010036900W WO2011071559A1 WO 2011071559 A1 WO2011071559 A1 WO 2011071559A1 US 2010036900 W US2010036900 W US 2010036900W WO 2011071559 A1 WO2011071559 A1 WO 2011071559A1
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WIPO (PCT)
Prior art keywords
led
panel
leds
active control
micro
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PCT/US2010/036900
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English (en)
Inventor
Kei May Lau
Chi Wing Keung
Zhaojun Liu
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Nano And Advanced Materials Institute Limited
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Application filed by Nano And Advanced Materials Institute Limited filed Critical Nano And Advanced Materials Institute Limited
Priority to US13/130,442 priority Critical patent/US8557616B2/en
Publication of WO2011071559A1 publication Critical patent/WO2011071559A1/fr
Priority to US13/466,660 priority patent/US8642363B2/en
Priority to US14/022,878 priority patent/US9349911B2/en
Priority to US14/098,103 priority patent/US9041025B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Definitions

  • the present subject matter relates generally to manufacturing a Light Emitting Diode (LED) micro-display on an Active Matrix (AM) panel, and more specifically to manufacturing an LED micro-display on an AM panel using flip-chip technology.
  • LED Light Emitting Diode
  • AM Active Matrix
  • LED array displays made with individually packaged devices have been widely used for various applications.
  • different techniques have been exploited to fabricate monolithic, passively-addressable LED arrays.
  • the array dimensions and pixel brightness in conventional passively-addressable LED arrays were limited by the loading effect in the same row or column.
  • various new address schemes and fabrication technologies are suggested to improve the operating effectiveness of monolithic LED arrays.
  • U.S. Patent Nos. 5,789,766, 5,827,753, and 5,893,721 relate to methods of fabricating an LED array and driving circuitry that includes sequentially forming overlying layers of material on the surface of a semiconductor substrate, the layers cooperating to emit light when activated.
  • the insulating layer is formed on the layers and the layers are isolated into an array area and the driver circuitry area with row and column drivers dividing the array area into an array of LEDs arranged in rows and columns.
  • Row and column driver circuits are formed on the insulating layer in the driver circuitry area. Row buses individually couple each LED in the array to corresponding driver circuits.
  • circuitry layer formed on the insulating layer can only be a thin film device like a-Si TFT or poly-Si TFT, however, these have low field effect mobility and cannot provide enough current for the LEDs.
  • these three patents adopt a bottom-emitting configuration and the aperture of the array is limited by the circuitry area, thereby resulting in a relatively low light efficiency.
  • U.S. Patent Application Publication No. 2008/0194054 relates to a method of fabricating an LED array package structure having a silicon substrate.
  • the LED array package structure includes a silicon substrate having a plurality of cup-structures thereon, a reflective layer disposed on the silicon substrate, a transparent insulation layer disposed on the reflective layer, a conductive layer disposed on the transparent insulation layer and a plurality of LEDs disposed respectively on the conductive layer in each cup-structure.
  • the LED array can only operate in a passive mode and each LED size is as large as tens millimeters. Hence, the LEDs made by this method often suffer from bad illumination uniformity and the low resolution.
  • U.S. Patent No. 6,975,293 relates to five types of driving circuits for an active matrix LED display.
  • the circuits are composed of four MOS transistors, each of which has a drain and a source.
  • An anode of an LED is coupled to a source of a driving transistor and a cathode of the LED is coupled to a second voltage.
  • U.S. Patent Application Publication No. 2008/0171 141 relates to methods of fabricating LED array structures including multiple vertical LED stacks coupled to a single metal substrate. Such an LED array may offer better heat conduction and an improved matching of LED characteristics (e.g., forward voltage and emission wave length) between the individual LED stacks compared to conventional LED arrays. But the LED array in this reference can only act as a single LED which can only light on and off together and cannot control the LED pixel individually and precisely.
  • LED characteristics e.g., forward voltage and emission wave length
  • the present subject matter provides a method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and a display apparatus having the monolithic LED micro-display.
  • the subject matter is directed to a method for manufacturing a monolithic Light Emitting Diode (LED) micro-display panel on an Active Matrix (AM) panel, comprising: providing a substrate of the LED micro-display panel; providing a plurality of overlaying layers of material on a surface of the substrate, the plurality of overlaying layers of material being configured in combination to emit light when activated; patterning the plurality of overlaying layers of material by removing a part thereof all the way down to the surface of the substrate; depositing a current spreading layer on the plurality of overlaying layers of material and the surface of the substrate; providing a metal multilayer on the patterned plurality of overlaying layers of material and the surface of the substrate; patterning the metal multilayer in such a configuration that a first portion of the metal multilayer, which lies on the patterned plurality of overlaying layers of material, and a second portion of the metal multilayer, which lies on the surface of the substrate are conductively disconnected, thereby forming an micro-array of multiple monolith
  • the subject matter is directed to a method for manufacturing an assembly of a monolithic Light Emitting Diode (LED) micro-display panel including a plurality of LEDs thereon and an Active Matrix (AM) panel, comprising: providing a substrate of the AM panel; providing active control circuit chips on the substrate of the AM panel; providing conductive solder material on the active control circuit chips; and combining the AM panel with the monolithic LED micro-display panel in such a configuration that the active control circuit chips are flip-chip bonded to the plurality of monolithic LEDs via the conductive solder material.
  • LED Light Emitting Diode
  • AM Active Matrix
  • the subject matter is directed to a Light Emitting Diode (LED) display comprising: a LED panel mounted with a plurality of LEDs arranged in rows and columns; and an Active Matrix (AM) panel mounted with a plurality of active control circuits, wherein the LED panel is combined with the AM panel in such a configuration that each of the plurality of LEDs is associated with each of the active control circuits, each pair of an LED and an associated active control circuit being electrically insulated from other pairs of LEDs and associated active control circuits in the LED display, each LED being independently controllable by each associated active control circuit.
  • LED Light Emitting Diode
  • AM Active Matrix
  • FIG. 1 is a simplified prior art schematic diagram of a top plan view of a passive LED matrix wherein the passive LED matrix includes a plurality of LEDs arranged in rows and columns with anodes in a same column connected to one another via column buses and cathodes in a same column connected to one another via row buses.
  • FIG. 2 shows a top plan view of the prior art passive LED matrix, as schematically shown in FIG. 1.
  • FIG. 3 schematically shows a manufacture of an AM LED display according to the present subject matter by conductive bonding an LED micro-array panel with an AM panel.
  • FIG. 4 schematically shows a layout of an 8 ⁇ 8 LED micro-array according to the present subject matter wherein individual LEDs on a same column are connected to one another by their n-electrodes at the end of each row as cathodes while individual LEDs on a same row are connected to an output of an AM panel through the solder bumps as anodes.
  • FIG. 5 shows a turn-on voltage distribution of eight LEDs in the same row according to the present subject matter.
  • FIG. 6 schematically shows a configuration of driving circuitry on an AM panel according to the present subject matter.
  • FIG. 7 shows a cross-sectional diagram of two neighboring LED pixels in an LED micro-array as shown in FIG. 4.
  • FIG. 8 shows a configuration of 8 ⁇ 8 LED driving circuits on an AM panel according to the present subject matter.
  • FIG. 9 is a schematic diagram of a pixel driving circuit according to the present subject matter.
  • FIG. 10 shows a microscopic image of an assembled AM LED micro-array panel.
  • FIG. 11 shows a typical current-voltage (l-V) characteristic of an individual pixel in an AM LED micro-array panel.
  • FIG. 12A and FIG. 12B respectively show fully turned-on and individually turned- on images of an AM LED micro-array panel.
  • FIG. 13 shows solder bumps on a top of an AM panel.
  • FIG. 1 is a simplified schematic diagram of a top plan view of a prior art passive
  • FIG. 2 shows a top plan view of the prior art passive LED matrix, as schematically shown in FIG. 1.
  • FIG. 3 schematically shows a manufacture of an AM LED display 104 according to the present subject matter by flip-chip boding an LED micro-array panel 105 with an AM panel 106.
  • the flip-chip bonding is a method for interconnecting semiconductor devices, such as Integrated Circuit (IC) chips and micro-electromechanical systems, to external circuitry with solder bumps that have been deposited onto the chip pads.
  • the solder bumps are deposited on the chip pads on the top side of the wafer during the final wafer processing step.
  • IC Integrated Circuit
  • a plurality of active control circuits mounted on the AM panel 104 are flipped over so that their top sides face down, and aligned and coherently adhered to bonding pads of corresponding LEDs mounted on the LED micro-array panel 105. This procedure will be described in more detail below with reference to FIG. 5.
  • FIG. 4 schematically shows a layout of an 8 ⁇ 8 LED micro-array 105 according to the present subject matter wherein individual LEDs 101 (emission wavelength 440 nm) on a same column are connected to one another by their n-electrodes (not shown) via a bus 102 at the end of each row as cathodes 116 while individual LEDs 101 on a same row are connected to an output of an AM panel through the solder bumps as anodes 117.
  • the current passes through an n-GaN layer and an n-metal bus line to reach the n-electrodes.
  • the LED micro-array has similar electrical properties as a commercial 8 ⁇ 8 LED dot array.
  • flip-chip technology can improve heat dissipation, reliability, and manufacturability.
  • a silicon substrate has a larger thermal conductivity (150 W/nrrK) than a sapphire substrate (46 W/ nrrK), and well-developed flip-chip technology has been used with silicon for decades.
  • the p-electrode itself can be made reflective, thus eliminating any absorption of the current spreading layer and metal pads. In this way, the light output power and efficiency will be improved.
  • FIG. 5 shows a turn-on voltage distribution of eight LEDs in the same row according to the present subject matter.
  • the turn-on voltages of LEDs under the same 20 mA current injection, were strongly dependent on the distance between each LED and n-electrode.
  • Series resistance of the bus bars to the n-GaN contact strip resulted in increased turn-on voltage with longer distance of dies from the contacts at the end of each column.
  • the variation of turn-on voltage might cause a different junction temperature and/or a compensation of piezoelectric field between the individual LED pixels, and hence, a variation in lifetime and emitting wavelength of the individual LEDs.
  • the wavelength variation across the LEDs would result in a poor angular homogeneity of color purity.
  • the turn-on voltage uniformity was greatly improved in a design with 40 m-wide one-side n-metal bus lines on each row.
  • the turn-on voltages varied only from 3.30 to 3.70 V over the whole row under the same current injection, as shown in FIG. 5.
  • FIG. 6 schematically shows a configuration of driving circuitry on an AM panel according to the present subject matter.
  • Transistor T1 serves as a switching transistor and T2 serves as a driving transistor.
  • T1 is switched on by a scan signal, a data signal switches T2 on and is stored in the capacitor C1. Then, T2 provides current light up the LED pixel whose p-electrode is connected to the drain of T2.
  • Driving transistor T2 is designed with a large W/L ratio to warrant enough output current for the LED pixel.
  • FIG. 7 shows a cross-sectional diagram of two neighbored LED pixels 107 shown in FIG. 4 in an LED micro-array according to the present subject matter.
  • An n-GaN layer 109, a Multiple Quantum Well (MQW) 110, and a p-GaN layer 111 were grown on a substrate 108.
  • Silicon dioxide (S1O2) masks were used for inductively coupled plasma (ICP) etching.
  • ICP inductively coupled plasma
  • the LED wafer was etched all the way down to the substrate. Rows of the micro-array were defined and isolated in this step.
  • a Plasma-Enhanced Chemical Vapor Deposition (PECVD) S1O2 mask and an ICP were used again to define the mesa structure of each LED pixel.
  • PECVD Plasma-Enhanced Chemical Vapor Deposition
  • a thin Ni/Au (5/5 nm) current spreading layer 112 was deposited onto the p-GaN layer 111 to form p-electrodes. Annealing in the atmospheric ambient at 570°C for 5 minutes was performed. Then, a metal layer 113 was evaporated to form n-electrodes and a reflective layer on the p-electrodes simultaneously. Finally, Silicon dioxide passivation 114 was applied onto the wafer. Openings in the S1O2 layers were defined for flip-chip bonding. The fabrication of an AM LED micro-array display will be described in greater detail below.
  • a standard Multiple Quantum Well (MQW) blue LED wafer (emission wavelength 440 nm) grown on a sapphire substrate was used for fabrication of an LED micro-array.
  • MQW Multiple Quantum Well
  • GaAs, SiC, Semi-insulating GaAs, or Quartz substrate can be used for fabrication of an LED micro-array.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • S1O 2 masks were used for ICP etching.
  • the LED wafer was etched all the way down to the sapphire substrate. Rows of the array were defined and isolated in this step.
  • the PECVD S1O 2 mask and ICP were again used to define the mesa structure of each LED pixel, with individual device size of 300x300 ⁇ 2 .
  • a thin Ni/Au (5/5 nm) current spreading layer was deposited onto a p-GaN surface by electron beam evaporation to form p-electrodes. Annealing at 570°C in ambient atmosphere for 5 minutes was performed.
  • a thin Ag/ITO current spreading layer can be used.
  • a Ti/AI/Ti/Au (30/120/10/30 nm) multilayer metal was evaporated to form n- electrodes and a reflective layer on the p-electrodes simultaneously.
  • S1O 2 passivation (or SiN x or photoresist) was applied onto the wafer. Openings in the S1O 2 were defined, and a Ni/Au (500/30 nm) contact pad was formed in the opening for flip- chip bonding.
  • the AM panel was fabricated with standard Complementary Metal-Oxide Semiconductor (CMOS) process on a (100) single crystal silicon wafer. After cleaning, well regions and body connections were deposited and patterned. Field oxidation was performed to define the active area of the transistors using silicon nitride as a hard mask. Then, a thin layer of thermal oxide was grown as gate oxide. After poly-Si deposition and gate patterning, a source/drain region was formed by ion implantation with standard self-alignment technology. Then, low temperature oxide (LTO) was deposited, and the wafer was annealed to densify the LTO and to activate the implanted dopants simultaneously. After opening contact holes on the LTO layer, Al-Si alloy was deposited, and patterned for source/drain electrodes and interconnections.
  • CMOS Complementary Metal-Oxide Semiconductor
  • FIG. 8 shows a configuration of 8 ⁇ 8 LED driving circuits on an AM panel according to the present subject matter.
  • the AM panel includes 8 ⁇ 8 pixel driving circuits 201 , a power source VDD 202, a ground 203, and inputs for data signals 204 and inputs for select signals 205.
  • the driving circuits 201 are selected from the group consisting of p-channel Metal Oxide Semiconductor (PMOS) transistors; n-channel Metal Oxide Semiconductors (NMOS) transistor; n-type amorphous silicon Thin Film Transistors (n-type a-Si TFTs); p-type amorphous silicon Thin Film Transistors (p-type a-Si TFTs); n-type poly crystalline silicon Thin Film Transistors (n-type p-Si TFTs); p- type poly crystalline silicon Thin Film Transistors (p-type p-Si TFTs); n-type SOI transistors; and/or p-type SOI transistors.
  • PMOS Metal Oxide Semiconductor
  • NMOS Metal Oxide Semiconductors
  • n-type a-Si TFTs n-type a-Si TFTs
  • p-type amorphous silicon Thin Film Transistors p-type poly crystalline silicon
  • FIG. 9 is a schematic diagram of a pixel driving circuit according to the present subject matter.
  • Transistor T1 serves as a switching transistor and transistor T2 serves as a driving transistor.
  • transistor T1 When transistor T1 is switched on by a scan signal, a data signal switches transistor T2 on and is stored in capacitor C1. Then, transistor T2 provides current to turn on the LED pixel whose p-electrode is connected to the drain of transistor T2.
  • Driving transistor T2 is designed with a large W/L ratio to warrant enough current for the LED pixel.
  • FIG. 10 shows a microscopic image of an assembled AM LED micro-array panel.
  • the LED micro-array 104 is thinned and polished, and then flipped on an AM panel 105. Light is emitted from the backside of the substrate. It is found that the aspect ratio of the AM LED micro-array could be as high as 100%, profiting from bottom emitting configuration.
  • FIG. 11 shows a typical current-voltage (l-V) characteristic of an individual pixel in an AM LED micro-array panel. Since the LED and the driving transistor are connected in series, the operating points are determined by the power supply voltage as well as the current-voltage characteristics of the LED and the driving transistor. From the l-V curve, it is shown that the AM panel has sufficient driving capability for the LED micro-array.
  • l-V current-voltage
  • FIG. 12A and FIG. 12B respectively show fully turned-on and individually turned- on images of an AM LED micro-array panel according to the present subject matter.
  • the LED pixels have high brightness, good luminance uniformity and individual controllability by the AM panel.
  • FIG. 13 shows an AM panel on which a plurality of solder bumps are attached in rows and columns.
  • each LED pixel in the LED micro-array as well as prevention of cross-talk between neighboring LED pixels is achieved.
  • the present subject matter provides good luminance uniformity and high drive capability across a large area by driving each LED pixel with an individual pixel circuit, as well as ensuring a small LED pixel pitch and high display resolution. Also, by this constitution, interconnection lines between an output of the AM panel and a p-electrode of the LED pixels is saved. The present subject matter overcomes the incompatibility between the LED process and the CMOS process.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

Un microréseau monolithique à diodes électroluminescentes (LED) programmée à matrice active (AM), à haute définition est fabriqué au moyen de la technique des puces retournées. Le processus de fabrication inclut la fabrication d'un microréseau LED ainsi que d'un panneau AM et la combinaison du microréseau LED ainsi que du panneau AM résultants au moyen de la technologie des puces inversées. Le microréseau LED est développé et fabriqué sur un substrat de saphir et le panneau AM peut être fabriqué au moyen d'un processus CMOS. Les pixels LED dans une même rangée partagent une ligne omnibus N commune qui est connectée à la masse du panneau AM tandis que les électrodes P des pixels LED sont électriquement séparées de manière à ce que chaque électrode P soit indépendamment connectée à une sortie de circuits d'attaque montés sur le panneau AM. Le microréseau LED est soudé au panneau AM, selon la technique des puces retournées, de sorte que le panneau AM contrôle les pixels LED individuellement et que les pixels LED présentent une excellente uniformité d'émission. Grâce à cette constitution, il est possible de supprimer l'incompatibilité entre les processus LED et les processus CMOS.
PCT/US2010/036900 2009-12-09 2010-06-01 Procédé de fabrication d'un écran miniature monolithique à diodes électroluminescentes sur un panneau à matrice active utilisant la technique des puces retournées et appareil d'affichage doté de l'écran miniature monolithique à diodes électroluminescentes WO2011071559A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/130,442 US8557616B2 (en) 2009-12-09 2010-06-01 Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic LED micro-display
US13/466,660 US8642363B2 (en) 2009-12-09 2012-05-08 Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
US14/022,878 US9349911B2 (en) 2009-12-09 2013-09-10 Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology
US14/098,103 US9041025B2 (en) 2009-12-09 2013-12-05 Monolithic full-color LED micro-display on an Active Matrix panel manufactured using flip-chip technology

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26789409P 2009-12-09 2009-12-09
US61/267,894 2009-12-09

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US13/130,442 A-371-Of-International US8557616B2 (en) 2009-12-09 2010-06-01 Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic LED micro-display
US13/466,660 Continuation-In-Part US8642363B2 (en) 2009-12-09 2012-05-08 Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
US14/022,878 Division US9349911B2 (en) 2009-12-09 2013-09-10 Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology

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RU2474920C1 (ru) * 2011-11-14 2013-02-10 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
WO2013093464A1 (fr) * 2011-12-20 2013-06-27 Mled Limited Amélioration du contraste d'affichage
RU2492550C1 (ru) * 2012-05-22 2013-09-10 Вячеслав Николаевич Козубов Способ формирования светоизлучающих матриц
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EP3327799A4 (fr) * 2015-07-17 2018-12-26 Stanley Electric Co., Ltd. Élément électroluminescent à semi-conducteur au nitrure
CN110599952A (zh) * 2019-10-22 2019-12-20 浙江德广信电子科技股份有限公司 一种led显示单元板

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