CN110246931B - 一种Micro-LED芯片、显示屏及制备方法 - Google Patents
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Abstract
一种Micro‑LED显示屏的制备方法,包括以下步骤:在蓝宝石衬底上依次生长N型GaN层、量子阱发光层和P型GaN层;由上至下依次刻蚀P型GaN层、量子阱发光层以及N型GaN层,形成第一沟槽;在P型GaN层上表面生长ITO层,并对其进行刻蚀,生成第二沟槽;在所述第一沟槽中生成N型接触电极;在N型接触电极上表面以及所述第二沟槽中生成上宽下窄的形状的反射电极;在Micro‑LED芯片表面沉积绝缘层并对所述绝缘层进行蚀刻,露出所述反射电极;将驱动电路基板与所述反射电极进行焊接。本发明还提供一种Micro‑LED芯片及显示屏,增加了Micro‑LED芯片焊接的结合力,提高了Micro‑LED显示屏的成品率,降低了生产成本。
Description
技术领域
本发明涉及LED显示技术领域,尤其涉及一种Micro-LED芯片、显示屏及制备方法。
背景技术
微发光二极体显示器(Micro LED Display)为新一代的显示技术,采用微型化LED阵列,也就是将LED结构设计进行薄膜化、微小化与阵列化,使其体积约为目前主流LED大小的1%,每一个像素都能定址、单独驱动发光,将像素点的距离由原本的毫米级降到微米级。Micro LED优点,包括,低功耗、高亮度、超高分辨率与色彩饱和度、反应速度快、超省电、寿命较长、效率较高等,其功率消耗量约为LCD的10%、OLED的50%。而与同样是自发光显示的OLED相较之下,亮度比其高30倍,且分辨率可达1500PPI(像素密度),相当于Apple Watch采用OLED面板达到300PPI的5倍之多,另外,具有较佳的材料稳定性与无影像烙印。
现有的微发光二极体显示器结构,随着LED芯片尺寸的缩小,焊盘尺寸会也会成倍减小,使得芯片与屏体基板焊接的结合力会随之减小,LED芯片脱焊的概率增加,最终导致Micro-LED显示屏的坏点数量成倍增多。特别在柔性、折叠、以及拉伸等Micro-LED屏体中,在使用过程中,对焊接的结合力要求更高,因脱焊致使屏幕出现坏点的数量会更多。
发明内容
为了解决现有技术存在的不足,本发明提供一种Micro-LED芯片、显示屏及制备方法,防止Micro-LED芯片与屏体基板焊接时的脱焊现象。
为了实现上述目的,本发明提供的Micro-LED芯片,包括,蓝宝石衬底、N型GaN层、量子阱发光层、P型GaN层、ITO层、N型接触电极、反射电极,以及绝缘层,其中,
所述反射电极为上宽下窄的形状,且其上表面高于所述ITO层的上表面。
进一步地,所述N型接触电极位于所述N型GaN层的上表面,所述N型接触电极的上表面与所述P型GaN层上表面处于同一高度。
进一步地,所述绝缘层位于所述Micro-LED芯片的上表面,其高度比所述反射电极的高度高。
进一步地,所述反射电极为上宽下窄的形状。
进一步地,所述反射电极为倒梯形。
进一步地,所述绝缘层位于芯片的上表面,其高度比所述反射电极的高度高。
为了实现上述目的,本发明提供的Micro-LED显示屏,包括Micro-LED芯片、驱动电路基板。
为了实现上述目的,本发明提供的Micro-LED显示屏的制备方法,包括以下步骤:
在蓝宝石衬底上依次生长N型GaN层、量子阱发光层和P型GaN层;
刻蚀P型GaN层、量子阱发光层以及N型GaN层,形成第一沟槽;
在P型GaN层上表面生长ITO层,并对其进行刻蚀,生成第二沟槽;
在所述第一沟槽中生成N型接触电极;
在N型接触电极上表面以及所述第二沟槽中生成上宽下窄的形状的反射电极;
在Micro-LED芯片表面沉积绝缘层并进行蚀刻,露出所述反射电极;
将驱动电路基板焊接与所述反射电极进行焊接。
进一步地,所述在所述第一沟槽中生成N型接触电极的步骤,是在所述第一沟槽的底部生成N型接触电极,所述N型接触电极的上表面与所述P型GaN层上表面处于同一高度。
更进一步地,所述在Micro-LED芯片表面沉积绝缘层的步骤,是在Micro-LED芯片表面沉积绝缘层,使搜索绝缘层的上表面高于所述反射电极上表面。
进一步地,所述上宽下窄的形状的反射电极为倒梯形反射电极。
本发明提供一种Micro-LED芯片、显示屏及制备方法,通过采用倒梯形电极作为焊盘的设计,增加Micro-LED芯片焊接的结合力,不但解决了Micro-LED芯片与屏体基板焊接时脱焊的问题,有效地减少Micro-LED芯片与屏体基板脱焊异常的发生概率,提高Micro-LED显示器的加工良率,降低了生产成本。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起,用于解释本发明,并不构成对本发明的限制。在附图中:
图1为根据本发明的Micro-LED显示屏结构示意图;
图2为根据本发明的Micro-LED显示屏制备方法流程图;
图3为根据本发明形成外延层的横截面结构示意图;
图4为根据本发明蚀刻外延层后的横截面结构示意图;
图5为根据本发明的ITO层刻蚀后的沟槽横截面结构示意图;
图6为根据本发明形成的N型接触电极横截面结构示意图;
图7为根据本发明形成的反射电极横截面结构示意图;
图8为根据本发明的Micro-LED芯片横截面结构示意图;
图9为根据本发明的基板上焊料凸点横截面结构示意图;
图10为根据本发明的Micro-LED芯片与基板焊接后的横截面结构示意图。
具体实施方法
以下结合附图对本发明的优选实施例进行说明,应当理解,此处所描述的优选实施例仅用于说明和解释本发明,并不用于限定本发明。
图1为根据本发明的Micro-LED显示屏结构示意图,如图1所示,本发明的Micro-LED显示屏,包括,Micro-LED芯片,以及通过焊料与Micro-LED芯片焊接在一起的驱动电路基板10,其中,
Micro-LED芯片,包括,蓝宝石衬底1、N型GaN层2、量子阱发光层3、P型GaN层4、ITO层5、N型接触电极6、反射电极7、绝缘层8。
在蓝宝石衬底1的上部,依次生长有N型GaN层2、量子阱发光层3和P型GaN层4。
ITO层5位于在P型GaN层4的上表面。
N型接触电极6位于N型GaN层2的上表面,N型接触电极6的上表面与P型GaN层4的上表面位于同一高度,使得N型接触电极6与焊料更好的接触。
两个反射电极7,一个位于N型接触电极6上表面,另一个位于P型GaN层4上表面。反射电极7的上表面高于ITO层5的上表面,且为上宽下窄形状,增大了反射电极7与焊料的接触面积,增加Micro-LED芯片焊接的结合力,解决Micro-LED芯片与驱动电路基板10焊接时容易脱焊的问题。本发明的反射电极7,优选地采用倒梯形。
绝缘层8位于Micro-LED芯片上表面,其高度比反射电极7的高度高,避免焊料溢出到Micro-LED芯片的表面,导致P、N电极直接导通。
图2为根据本发明的Micro-LED显示屏制备方法流程图,下面将参考图2,对本发明的Micro-LED显示屏制备方法进行详细描述。
首先,在步骤201,在蓝宝石衬底1上依次生长一层N型GaN层2、一层量子阱发光层3和一层P型GaN层4,形成Micro-LED芯片的外延层。图3为根据本发明形成外延层的横截面结构示意图,如图3所示,Micro-LED芯片的外延层从下至上依次为N型GaN层2、量子阱发光层3和P型GaN层4。
在步骤202,在Micro-LED芯片的外延层的一侧,从上至下对P型GaN层4、量子阱发光层3和N型GaN层2进行蚀刻,形成第一沟槽20。在本步骤中,对N型GaN层2进行部分刻蚀。图4为根据本发明蚀刻外延层后的横截面结构示意图,如图4所示,第一沟槽20穿过P型GaN层4、量子阱发光层3直到N型GaN层2。
在步骤203,在P型GaN层4上生长一层ITO层5(ITO薄膜),并对其进行刻蚀,露出P型GaN层4,生成第二沟槽30。图5为根据本发明的ITO层刻蚀后的沟槽横截面结构示意图,如图5所示,ITO层5位于P型GaN层4的上表面,第二沟槽30的底部为P型GaN层4。
在步骤204,在第一沟槽20底部生成N型接触电极6。图6为根据本发明形成的N型接触电极横截面结构示意图,如图6所示,形成的N型接触电极6的水平宽度小于第一沟槽20的水平宽度,其上表面与P型GaN层4位于同一高度。
在步骤205,在N型接触电极6的上表面和第二沟槽中分别形成反射电极7。图7为根据本发明形成的反射电极横截面结构示意图,如图7所示,形成的反射电极7为倒梯形,其上表面高于ITO层5。
在步骤206,沉积绝缘材料,在Micro-LED芯片的上表面形成绝缘层8,然后对绝缘层8进行开孔,露出反射电极7。图8为根据本发明的Micro-LED芯片横截面结构示意图,如图8所示,绝缘层8的高度比反射电极7的高度高,开孔后露出了两个反射电极7。
在步骤207,在驱动电路基板10的下部制备焊料凸点9。图9为根据本发明的基板上焊料凸点横截面结构示意图,如图9所示,在驱动电路基板10的下部形成有两个焊料凸点9,分别与绝缘层8上的开孔相对应。每个焊料凸点9的体积需等于或略小于绝缘层8的开孔体积,满足每个焊料凸点9完全填充到开孔里,避免焊料从孔中溢出,导致P、N电极直接导通。
在步骤208,将驱动电路基板10置于绝缘层8上表面,利用焊料凸点9将驱动电路基板10焊接在倒梯形反射电极7上,完成Micro-LED显示屏的制备。图10为根据本发明的Micro-LED芯片与基板焊接后的横截面结构示意图,如图10所示,焊料在倒梯形反射电极7周围形成焊点,将Micro-LED芯片与驱动电路基板10焊接在一起。
以上仅为本发明的优选实施例而已,并不用于限制本发明,本发明的Micro-LED芯片,可用于制造Micro-LED显示屏,特别是柔性、折叠、以及拉伸的Micro-LED显示屏。对于本领域的技术人员来说,其依然可以对前述实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,但是凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (7)
1.一种Micro-LED芯片,包括,蓝宝石衬底、N型GaN层、量子阱发光层、P型GaN层、ITO层、N型接触电极、反射电极,以及绝缘层,其特征在于,所述反射电极为上宽下窄的形状,且其上表面高于所述ITO层的上表面,所述反射电极的上表面用于与Micro-LED显示屏驱动电路基板下部的焊料凸点焊接;
所述绝缘层位于所述Micro-LED芯片的上表面,其高度比所述反射电极的高度高。
2.根据权利要求1所述的Micro-LED芯片,其特征在于,所述N型接触电极位于所述N型GaN层的上表面,所述N型接触电极的上表面与所述P型GaN层上表面处于同一高度。
3.根据权利要求1所述的Micro-LED芯片,其特征在于,所述反射电极为倒梯形。
4.一种Micro-LED显示屏,包括Micro-LED芯片、驱动电路基板,其特征在于,所述Micro-LED芯片采用权利要求1-3任一项所述的Micro-LED芯片。
5.一种Micro-LED显示屏的制备方法,其特征在于,包括以下步骤:在蓝宝石衬底上依次生长N型GaN层、量子阱发光层和P型GaN层;由上至下依次刻蚀所述P型GaN层、所述量子阱发光层以及所述N型GaN层,形成第一沟槽;在所述P型GaN层上表面生长ITO层,并对所述ITO层进行刻蚀,生成第二沟槽;在所述第一沟槽中生成N型接触电极;在所述N型接触电极上表面以及所述第二沟槽中生成上宽下窄的形状的反射电极;在Micro-LED芯片表面沉积绝缘层并对所述绝缘层进行蚀刻,露出所述反射电极;将Micro-LED显示屏驱动电路基板下部的焊料凸点与所述反射电极的上表面进行焊接,其中,所述绝缘层的上表面高于所述反射电极上表面。
6.根据权利要求5所述的Micro-LED显示屏的制备方法,其特征在于,所述在所述第一沟槽中生成N型接触电极的步骤,是在所述第一沟槽的底部生成N型接触电极,所述N型接触电极的上表面与所述P型GaN层上表面处于同一高度。
7.根据权利要求5所述的Micro-LED显示屏的制备方法,其特征在于,所述上宽下窄的形状的反射电极为倒梯形的反射电极。
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