WO2011058976A1 - 中空ナノ粒子の製法、中空ナノ粒子及びその分散液 - Google Patents
中空ナノ粒子の製法、中空ナノ粒子及びその分散液 Download PDFInfo
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- WO2011058976A1 WO2011058976A1 PCT/JP2010/069951 JP2010069951W WO2011058976A1 WO 2011058976 A1 WO2011058976 A1 WO 2011058976A1 JP 2010069951 W JP2010069951 W JP 2010069951W WO 2011058976 A1 WO2011058976 A1 WO 2011058976A1
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- Prior art keywords
- nanoparticles
- hollow
- ionic liquid
- metal
- solid
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Links
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Classifications
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
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- B81C99/0045—End test of the packaged device
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- B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
- B01J13/02—Making microcapsules or microballoons
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/0277—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides comprising ionic liquids, as components in catalyst systems or catalysts per se, the ionic liquid compounds being used in the molten state at the respective reaction temperature
- B01J31/0278—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides comprising ionic liquids, as components in catalyst systems or catalysts per se, the ionic liquid compounds being used in the molten state at the respective reaction temperature containing nitrogen as cationic centre
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- B01J35/23—
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/12—Oxidising
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- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
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Definitions
- the present invention relates to a method for producing hollow nanoparticles, hollow nanoparticles, and a dispersion thereof.
- Patent Document 1 discloses that hollow particles of titanium oxide can be obtained by adding a toluene solution of titanium butoxide to an ionic liquid and stirring vigorously. It is explained that this is formed by a sol-gel reaction of titanium butoxide caused by a trace amount of moisture in the ionic liquid at the interface of the toluene microdroplets formed in the ionic liquid.
- Patent Document 2 discloses that a layered oxide nanosheet and a cationic polymer are alternately adsorbed in a liquid phase on a polymer sphere to form a multilayer thin film of the nanosheet and the cationic polymer on the polymer spherical surface, Subsequently, a method for producing a hollow oxide shell structure by removing polymer spheres is disclosed.
- Non-Patent Document 1 reports that, when morphological changes after Cu nanoparticles were oxidized at room temperature to 400 ° C. were observed by TEM, hollow nanoparticles were formed by oxidation.
- the hollow particles of Patent Documents 1 and 2 described above are those having a particle size of the order of micrometers, and those having a size of the order of nanometers are not obtained.
- the hollow nanoparticles of Non-Patent Document 1 are on the order of nanometers, but are formed by being attached to a substrate by vacuum deposition, so that it takes time and effort to peel off the substrate and disperse it in a liquid. At this time, there is a risk of aggregation in the liquid.
- the present invention has been made to solve such problems, and has as its main object to easily obtain hollow nanoparticles dispersed in a liquid.
- the present inventors heated an ionic liquid containing indium nanoparticles obtained by sputter deposition of indium to an ionic liquid in air, and obtained hollow indium oxide nanoparticles. Has been found to have produced the present invention.
- the method for producing the first hollow nanoparticle of the present invention includes: (A) obtaining a ionic liquid in which solid nanoparticles of the metal are dispersed by depositing a predetermined metal on the ionic liquid; (B) oxidizing the ionic liquid in which the solid nanoparticles are dispersed in a gas atmosphere containing an oxidizing gas to obtain hollow nanoparticles in which the core portion of the solid nanoparticles is hollow; Is included.
- the method for producing the second hollow nanoparticle of the present invention is as follows.
- the first method for producing hollow nanoparticles of the present invention it is possible to obtain hollow nanoparticles that are dispersed in an ionic liquid by a simple procedure in which a metal is vapor-deposited on an ionic liquid and then oxidized to prevent the particles from aggregating with each other. it can. Since the hollow nanoparticles obtained in this way have cavities inside, it is expected to store and transport substances using the cavities, and physical and chemical compared to solid nanoparticles Use in various fields is expected due to the different properties.
- the first metal and the second metal that is less oxidizable are deposited in the ionic liquid and then dispersed in the ionic liquid by a simple procedure. Hollow nanoparticles that are difficult to aggregate are obtained.
- This hollow nanoparticle is referred to as a jingle bell-type structure because the second metal particle enters the cavity. Since the hollow metal particles thus obtained have the second metal particles in the internal cavities, it is expected that a new reaction using the second metal particles as a catalyst will be developed. Use in various fields is expected due to the difference in physical and chemical properties compared to particles.
- the first metal and the second metal are deposited on the ionic liquid, they may be deposited simultaneously or sequentially.
- FIG. 1 is an explanatory diagram showing a schematic configuration of a vapor deposition apparatus 10.
- FIG. 2 is a photograph showing a TEM image of solid nanoparticles in Example 1.
- FIG. 3 is a graph showing the particle size distribution of solid nanoparticles in Example 1.
- 2 is a graph showing the core size distribution of solid nanoparticles in Example 1.
- FIG. 4 is a graph showing the XRD results of solid nanoparticles in Example 1.
- 2 is a graph showing the XPS results of solid nanoparticles in Example 1.
- 2 is a photograph showing a TEM image of hollow nanoparticles of Example 1.
- FIG. 2 is a graph showing the particle size distribution of hollow nanoparticles of Example 1.
- FIG. 3 is a graph showing a void size distribution of the hollow nanoparticles of Example 1.
- FIG. 2 is a graph showing XRD results of hollow nanoparticles of Example 1.
- FIG. 2 is an explanatory diagram of a mechanism for producing hollow nanoparticles of Example 1.
- FIG. 10 is a photograph showing a TEM image of solid nanoparticles in Example 7.
- FIG. 10 is a graph showing the particle size distribution of solid nanoparticles in Example 7.
- 10 is a graph showing an absorption spectrum of solid nanoparticles in Example 7.
- 6 is a photograph showing a TEM image of hollow nanoparticles of Example 7.
- FIG. 6 is a graph showing the particle size distribution of hollow nanoparticles of Example 7.
- 10 is a graph showing XRD results of hollow nanoparticles of Example 7. It is explanatory drawing which represented the gold-indium alternating arrangement board typically.
- FIG. 10 is a photograph showing a TEM image of solid nanoparticles in Example 8.
- FIG. 10 is a graph showing the particle size distribution of solid nanoparticles in Example 8.
- 6 is a photograph showing a TEM image of hollow nanoparticles of Example 8.
- FIG. 10 is a graph showing the particle size distribution of hollow nanoparticles of Example 8. It is a graph which shows the absorption spectrum of the solid nanoparticle before heating of Example 8, and the nanoparticle obtained after heating.
- FIG. 10 is an explanatory diagram of a generation mechanism of hollow nanoparticles having a jingle bell structure in Example 8.
- 10 is a photograph showing a TEM image of nanoparticles of Example 9.
- examples of the predetermined metal include Al, Cr, Co, In, Cu, Sn, Ti, Ga, Mo, W, Si, Mg, V, Mn, and Fe. , Ni, Zn, Ge, Nb, Ta, etc., among which Al, Cr, Co, In, Cu, Sn, Ti, Ga, Mo, W, etc. are preferable, and Al, Cr, Co, In, Cu, etc. , Sn and the like are particularly preferable. These are preferred because they have the property that a very thin metal oxide film is formed only on the surface when they become solid nanoparticles.
- examples of the first metal include Al, Cr, Co, In, Cu, Sn, Ti, Ga, Mo, W, Si, Mg, V, Mn, Fe, Ni, Zn, Ge, Nb, Ta, etc. are mentioned. Of these, Al, Cr, Co, In, Cu, Sn, Ti, Ga, Mo, W, etc. are preferable, and Al, Cr, Co, In, Cu, Sn and the like are particularly preferable.
- examples of the second metal include metals that are less likely to be oxidized than the first metal, such as Au, Pt, Pd, Rh, Ru, and Ir.
- an ionic liquid refers to a series of compounds that are liquid at room temperature despite being a salt composed only of cations and anions.
- the ionic liquid is stable at high temperatures, has a wide liquid temperature range, has a vapor pressure of substantially zero, and has ionic properties such as low viscosity and high oxidation / reduction resistance.
- the ionic liquid applicable to the present invention may be hydrophilic or hydrophobic, and the type thereof is not particularly limited. For example, aliphatic ionic liquid, imidazolium ionic liquid, Examples include pyridinium ionic liquids.
- Aliphatic ionic liquids include N, N, N-trimethyl-N-propylammonium bis (trifluoromethanesulfonyl) imide, N-methyl-N-propylpiperidinium bis (trifluoromethanesulfonyl) imide, N, N— Examples include diethyl-N-methyl-N- (2-methoxyethyl) ammonium bis (trifluoromethanesulfonyl) imide and N, N-diethyl-N-methyl-N- (2-methoxyethyl) ammonium tetrafluoroborate. be able to.
- imidazolium-based ionic liquid examples include 1,3-dialkylimidazolium salts and 1,2,3-trialkylimidazolium salts.
- 1,3-dialkylimidazolium salts include 1-ethyl-3-methylimidazolium bromide, 1-ethyl-3-methyl-imidazolium chloride, 1-ethyl-3-methylimidazolium (L ) -Lactate, 1-ethyl-3-methylimidazolium hexafluorophosphate, 1-ethyl-3-methylimidazolium tetrafluoroborate, 1-butyl-3-methylimidazolium chloride, 1-butyl- 3-methylimidazolium hexafluorophosphate, 1-butyl-3-methylimidazolium tetrafluoroborate, 1-butyl-3-methylimidazolium trifluoromethanesulfonate, 1-butyl-3-methylimid
- 1,2,3-trialkylimidazolium salts include 1-ethyl-2,3-dimethylimidazolium bromide, 1-ethyl-2,3-dimethylimidazolium chloride, 1-butyl-2,3-dimethylimidazole.
- Examples of other imidazolium salts include 1-allyl-3-methylimidazolium tetrafluoroborate, 1-allyl-3-ethylimidazolium tetrafluoroborate, and the like.
- Examples of pyridinium-based ionic liquids include ethyl pyridinium salts, butyl pyridinium salts, and hexyl pyridinium salts.
- examples of the ethylpyridinium salt include 1-ethylpyridinium bromide and 1-ethylpyridinium chloride.
- Examples of the butylpyridinium salt include 1-butylpyridinium bromide, 1-butylpyridinium chloride, and 1-butylpyridinium hexafluoro. Examples thereof include phosphate, 1-butylpyridinium tetrafluoroborate, 1-butylpyridinium trifluoromethanesulfonate, etc.
- Examples of hexylpyridinium salts include 1-hexylpyridinium bromide, 1-hexylpyridinium chloride, and 1-hexylpyridinium. Examples include hexafluorophosphate, 1-hexylpyridinium tetrafluoroborate, 1-hexylpyridinium trifluoromethanesulfonate, and the like.
- the vapor deposition performed in the step (a) is performed by a dry film formation method such as a well-known chemical vapor deposition method (CVD method) or physical vapor deposition method (PVD method). It can be carried out with the same apparatus and procedure as for depositing solid nanoparticles on the surface, but among these, physical vapor deposition methods (for example, vacuum vapor deposition method or ion deposition method) in which metal atoms are evaporated from solid state metals. Plating method, sputtering method, etc.) are preferable. According to physical vapor deposition, solid nanoparticles can be produced directly from a bulk material in a relatively simple system.
- CVD method chemical vapor deposition method
- PVD method physical vapor deposition method
- the sputtering method is more preferable.
- the sputtering method does not require a crucible when performing metal evaporation, so that solid nanoparticles with high purity can be produced.
- a resistance heating method, a far infrared heating method, an electron beam heating method, an arc heating method, a high frequency induction heating method, etc. can be used.
- a high frequency excitation method, an ion beam method, a cluster method, or the like can be used.
- a sputtering method for example, a DC sputtering method, a magnetron sputtering method, a high frequency sputtering method, an ion beam sputtering method, or the like is used. Can do.
- the step (a) is preferably performed under reduced pressure. If performed under reduced pressure, solid nanoparticles with high purity can be produced in a short time.
- “under reduced pressure” may be any pressure as long as the atmospheric pressure is lower than the atmosphere, and is preferably 20 Pa or less.
- the gas used is preferably a rare gas, more preferably argon gas.
- the pressure of the argon gas at this time is preferably 20 Pa or less. What is necessary is just to set the magnitude
- the preferred range of the reaction time varies depending on the reaction temperature and the amount of ionic liquid, but is preferably set in the range of several tens of seconds to several hours, more preferably in the range of 30 seconds to 20 minutes.
- a vapor deposition apparatus 10 When producing solid nanoparticles using a sputtering method, for example, the following may be performed.
- a vapor deposition apparatus 10 As shown in FIG. 1, as a vapor deposition apparatus 10, a vapor deposition chamber 12 that can be evacuated, a cathode 14 that is installed on the upper surface of the vapor deposition chamber 12 and can be fitted with a target material 18, and a position facing the cathode 14.
- the target material 18 is mounted on the cathode 14, and the glass substrate 20 on which the ionic liquid 22 is placed is placed on the anode 16.
- a high voltage is applied to the cathode 14 in a state where the inside of the vapor deposition chamber 12 is in a vacuum or a gas atmosphere (for example, argon gas).
- glow discharge is generated in the vapor deposition chamber 12, and gas ions generated by the glow discharge collide with the target material 18, so that the metal constituting the target material 18 is sputter evaporated.
- solid nanoparticles of the metal are generated on the ionic liquid 22 or in the ionic liquid 22.
- the particle size of the solid nanoparticles obtained in the step (a) can be varied depending on the type of the ionic liquid used. Moreover, the particle size of the solid nanoparticles obtained in the step (a) can be made different depending on the deposition time. Specifically, as the reaction time increases, the particle size of the solid nanoparticles increases, and particle growth tends to stop when reaching a predetermined size. Therefore, by changing the ionic liquid and the reaction time, solid nanoparticles having a target particle size can be produced.
- the type of ionic liquid used in the step (a) or The particle size of the hollow nanoparticles can be controlled by the deposition time in step (a).
- the oxidizing gas in the step (b) is not particularly limited as long as it has the ability to oxidize metals.
- oxygen gas or air Etc oxygen gas or air Etc.
- the heating temperature is not particularly limited as long as the metal constituting the hollow particles can be oxidized by the oxidizing gas,
- the heating time is 100 to 400 ° C., preferably 200 to 300 ° C.
- the heating time is not particularly limited as long as the metal constituting the hollow particles can be oxidized by the oxidizing gas, but for example, several minutes to several It's time.
- a solvent having a high affinity for the ionic liquid is added to the used ionic liquid.
- the solvent having a high affinity for the ionic liquid includes, for example, water, methanol, ethanol, acetone and the like when a hydrophilic one is used as the ionic liquid, and a hydrophobic one is used. If present, ether, heptane, chloroform, methylene chloride and the like can be mentioned.
- the step (a) and the step (b) may be carried out in one step rather than in two steps.
- a predetermined metal is deposited on an ionic liquid in a gas atmosphere containing an oxidizing gas, whereby the solid of the metal is added to the ionic liquid in one step. You may make it obtain the hollow nanoparticle in which the core part of the nanoparticle became a cavity.
- a predetermined metal for example, Al, Cr, Co, In, Cu, Sn, Ti, Ga, Mo, W, Si, Mg, V
- a low-purity rare gas atmosphere containing oxygen gas as an impurity
- Mn, Fe, Ni, Zn, Ge, Nb, Ta, etc. can be deposited on the ionic liquid to obtain an ionic liquid in which hollow nanoparticles are dispersed.
- a solid metal particle having a two-layer structure in which a predetermined metal is present in the portion and an oxide of the metal is present in the shell portion may be used.
- Al, Cr, Co, In, Cu, Sn, Ti, Ga, Mo, W, Si, Mg, V, Mn, Fe, Ni, Zn, Ge, Nb, or Ta is deposited on an ionic liquid. Is easy to obtain solid nanoparticles of such a two-layer structure.
- the metal oxide in the shell portion was generated using oxygen gas as an oxygen source.
- oxygen gas oxygen gas
- the hollow nanoparticle of the present invention has a spherical shape with a shell made of a metal oxide and an average particle diameter of more than 4 nm and 50 nm or less.
- Such hollow nanoparticles can be obtained, for example, by the production method of the first hollow nanoparticles of the present invention.
- the film thickness of the shell is about 2 nm regardless of the average particle diameter.
- the average particle diameter can be adjusted in the range of more than 4 nm and 50 nm or less by changing the kind of the ionic liquid in the first method for producing hollow nanoparticles of the present invention.
- hollow nanoparticles made of indium oxide it can be adjusted in the range of 6 to 18 nm (see Examples 1 to 6 described later).
- the hollow nanoparticle of the nonpatent literature 1 is not produced
- spherical hollow particles made of an inorganic oxide they are not nanoparticles because the particle size is 1 to 100 ⁇ m.
- the hollow nanoparticle of the present invention may be one in which a metal that is less oxidized than the metal constituting the metal oxide forming the shell exists in the hollow interior.
- Such hollow nanoparticles can be obtained, for example, by the method for producing the second hollow nanoparticles of the present invention.
- the hollow nanoparticle dispersion of the present invention is obtained by dispersing the above-described hollow nanoparticles of the present invention in an ionic liquid. Since such a dispersion is easier to handle than the hollow nanoparticles themselves, it is highly convenient.
- Examples 1 to 6 are examples in which hollow nanoparticles are produced in two steps using indium
- Example 7 is an example in which hollow nanoparticles are produced in two steps using copper
- Example 8 is In this example, hollow nanoparticles having a jingle bell structure are manufactured in two stages using gold and indium
- Example 9 is an example in which hollow nanoparticles are manufactured in one stage using indium.
- EMI-BF4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was dried under reduced pressure at 120 ° C. for 3 hours.
- FIG. 2 shows a TEM image of nanoparticles dispersed in an ionic liquid
- FIG. 3 shows the particle size distribution
- FIG. 4 shows the core size distribution.
- the TEM image was observed using a transmission electron microscope (manufactured by Hitachi High-Technologies Corporation, model H7650).
- a commercially available Cu grid with a carbon support film (Oken Shoji, STEM100Cu grid) is used as the TEM grid.
- the excess ionic liquid is filtered with a filter paper. Prepared by removing. Therefore, it can be said that the nanoparticles on the TEM grid are isolated from the ionic liquid.
- the nanoparticles in FIG. 2 have a core-shell structure consisting of a light gray shell and a dark gray core particle present inside this, and no voids are observed inside.
- 3 and 4 show that the solid nanoparticles have an average particle size of about 8 nm, a core size of about 4 nm, and a shell thickness of about 2 nm.
- the solid nanoparticles were analyzed by XRD and XPS. The results are shown in FIGS. From the XRD pattern of FIG. 5, only the peak corresponding to metal indium was observed as a crystal, and the peak corresponding to indium oxide was not observed. Further, from XPS in FIG.
- the solid nanoparticles have a core-shell structure in which metallic indium is present in the core portion and amorphous indium oxide is present in the shell portion.
- the oxygen source of indium oxide in the shell portion is considered to be a small amount of oxygen gas present as an impurity in the argon gas.
- FIG. 7 shows a TEM image of nanoparticles dispersed in an ionic liquid after heating in air
- Fig. 8 shows the particle size distribution
- Fig. 8 shows the void size distribution inside the particles.
- 9 shows.
- the nanoparticle in FIG. 7 is a hollow nanoparticle having a hollow inside because a dark gray ring surrounds a light gray circle. 8 and 9, it can be seen that the hollow nanoparticles have an average particle size of about 8 nm, a void size of about 4 nm, and a shell thickness of about 2 nm.
- the hollow nanoparticles were analyzed by XRD. The result is shown in FIG. From the XRD pattern of FIG.
- this hollow nanoparticle is a hollow nanoparticle of indium oxide having good crystallinity.
- the hollow nanoparticle generation mechanism is as follows. When solid nanoparticles of indium metal in the core and indium oxide in the shell are heated in air, oxygen in the air passes through the minute gaps in the shell. It is considered that the gas and indium metal in the core portion react to generate indium oxide and a cavity is generated in the core portion.
- Example 2 to 6 solid nanoparticles were produced using another ionic liquid instead of the ionic liquid EMI-BF4 of Example 1 described above. Specifically, BMMI-BF4 (1-butyl-2,3-dimethylimidazolium tetrafluoroborate) is used in Example 2, and BMI-PF6 (1-butyl-3-methylimidazolium hexafluoro) is used in Example 3.
- Example 2 Phosphate), BMI-BF4 (1-butyl-3-methylimidazolium tetrafluoroborate) in Example 4, AMI-BF4 (1-allyl-3-methylimidazolium tetrafluoroborate in Example 5) Salt), in Example 6, AEI-BF4 (1-allyl-3-ethylimidazolium tetrafluoroborate) was used.
- the particle size was about 6 nm
- Example 3 the particle size was about 7 nm
- Example 4 the particle size was about 10 nm
- Example 5 the particle size was about 16 nm
- Example 6 the particle size was about 18 nm. Nanoparticles were obtained.
- Example 7 (1) Production Method of Solid Nanoparticles EMI-BF4 0.60 cm 3 after drying was uniformly placed on the same slide glass as in Example 1. This was left in the same vapor deposition apparatus as in Example 1, and copper (disk shape, diameter 49 mm ⁇ thickness 0.5 mm) was attached as a target material at a position facing EMI-BF4, and copper sputter deposition was performed. (Distance between target and ionic liquid: 2.0 cm, inside vapor deposition chamber: high purity argon, pressure: 2.0 Pa, vapor deposition current: 40 mA, reaction time: 10 minutes). After sputtering, the EMI-BF4 solution on the slide glass surface, that is, the ionic liquid in which the nanoparticles were dispersed was collected.
- FIG. 12 shows a TEM image of nanoparticles dispersed in an ionic liquid
- FIG. 13 shows a particle size distribution.
- the nanoparticles shown in FIG. 12 are shown as gray circles having a uniform density, which indicates that the nanoparticles are solid solid nanoparticles.
- the average particle diameter of the solid nanoparticle is about 10 nm from FIG.
- the absorption spectrum of the ionic liquid after sputter deposition is shown in FIG. A peak considered to be derived from surface plasmon resonance of Cu nanoparticles was observed in the vicinity of 580 nm. This suggests that the surface of the solid nanoparticles does not have copper oxide or exists as a very thin layer even if it exists.
- FIG. 15 shows a TEM image of nanoparticles dispersed in an ionic liquid after heating in air
- FIG. 16 shows the particle size distribution.
- the nanoparticles shown in FIG. 15 are hollow nanoparticles because a dark gray ring surrounds a light gray circle.
- FIG. 15 shows that the hollow nanoparticles have a shell thickness of about 2.5 nm and a void size of about 15 nm.
- FIG. 16 shows that the hollow nanoparticles have an average particle diameter of about 20 nm.
- the hollow nanoparticles were analyzed by XRD. The result is shown in FIG. From the XRD pattern shown in FIG. 17, only peaks corresponding to Cu 2 O were observed as crystals.
- the hollow nanoparticles are Cu 2 O hollow nanoparticles with good crystallinity.
- the particle size is increased by about 2 times with the change from solid nanoparticles to hollow nanoparticles. This is because the solid particles are first aggregated by heating and the particle size is increased. This is considered to be because the particles were oxidized by gas to form hollow particles.
- Example 8 (1) Production Method of Solid Nanoparticles EMI-BF4 0.60 cm 3 after drying was uniformly placed on the same slide glass as in Example 1. This was left in the same vapor deposition apparatus as in Example 1, gold and indium were mounted as target materials at a position facing EMI-BF4, and both were sputter deposited simultaneously (distance between target and ionic liquid). : 2.0 cm, inside the deposition chamber: high purity argon, pressure: 2.0 Pa, deposition current: 10 mA, reaction time: 10 minutes). After sputtering, the EMI-BF4 solution on the slide glass surface, that is, the ionic liquid in which the nanoparticles were dispersed was collected. As shown in FIG.
- the target material is divided into six sections by three straight lines passing through the center of the disk, and is divided into six sections.
- the gold-indium alternating array plate in which gold and indium are alternately arranged (Diameter 49 mm x thickness 0.5 mm) was used.
- FIG. 19 shows a TEM image of nanoparticles dispersed in an ionic liquid
- FIG. 20 shows the particle size distribution. Since the nanoparticles shown in FIG. 19 are shown as gray circles having a uniform density, it can be seen that the nanoparticles are solid solid nanoparticles. In addition, FIG. 20 shows that the solid nanoparticles have an average particle diameter of about 6 nm.
- FIG. 21 shows a TEM image of nanoparticles dispersed in an ionic liquid after heating in air
- FIG. 22 shows the particle size distribution.
- the nanoparticles in FIG. 21 are surrounded by a dark gray ring around a light gray circle, and a darker gray circle is recognized in the light gray circle. It can be seen that the nanoparticle has a jingle bell type structure in which gold particles are present in the cavity.
- FIG. 21 shows that the hollow nanoparticles have a void size of about 6 nm and an internal gold size of about 4 nm.
- FIG. 22 shows that the hollow nanoparticles have an average particle diameter of about 12 nm.
- FIG. 21 shows a TEM image of nanoparticles dispersed in an ionic liquid after heating in air
- FIG. 22 shows the particle size distribution.
- the nanoparticles in FIG. 21 are surrounded by a dark gray ring around a light gray circle, and a darker gray circle is recognized in the light gray circle. It
- FIG. 23 is a graph showing absorption spectra before and after heating of the ionic liquid in which the solid nanoparticles obtained in (1) are dispersed. After heating, the peak position shifted by a long wavelength and appeared at about 520 nm. This wavelength agrees well with that of the surface plasmon resonance peak of Au nanoparticles. From this, by heating InAu alloy nanoparticles generated in the ionic liquid by simultaneous sputter deposition of indium and gold in air, only the nanoparticles of In are oxidized and de-alloyed to produce Au nanoparticles. It is suggested that As shown in FIG.
- the generation mechanism of a hollow nanoparticle having a jingle bell type structure is that solid nanoparticles of indium and gold in the core portion and indium oxide in the shell portion are generated by the above (1).
- the oxygen gas in the air reacts with the indium in the core through a minute gap in the shell and indium oxide is generated and a cavity is formed in the core.
- gold is not easily oxidized, it remains in the cavity as it is. Conceivable.
- Example 9 EMI-BF4 0.60 cm 3 after drying was uniformly placed on the same slide glass as in Example 1. This was left in the vapor deposition apparatus similar to Example 1, indium was attached as a target material at a position facing EMI-BF4, and sputter deposition was performed (distance between target and ionic liquid: 2.0 cm, In the vapor deposition chamber: standard purity argon (purity 99.99%), pressure: 1.5 Pa, vapor deposition current: 20 mA, reaction time: 10 minutes). After sputtering, the EMI-BF4 solution on the slide glass surface, that is, the ionic liquid in which the nanoparticles were dispersed was collected.
- FIG. 9 EMI-BF4 0.60 cm 3 after drying was uniformly placed on the same slide glass as in Example 1. This was left in the vapor deposition apparatus similar to Example 1, indium was attached as a target material at a position facing EMI-BF4, and sputter deposition was performed (distance between target and ionic liquid: 2.0 cm, In
- FIG. 25 shows a TEM image of nanoparticles dispersed in the ionic liquid.
- hollow nanoparticles having a hollow inside also exist.
- the number of hollow nanoparticles was about 10% of the whole.
- the particle size was 18.3 nm and the inner core size was 8.7 nm.
- the mechanism by which such hollow nanoparticles are generated is that solid nanoparticles are formed in the ionic liquid by sputter deposition, and the metal indium core in the particles is rapidly oxidized by oxygen gas present in a trace amount in argon gas. It is thought that it became hollow nanoparticles.
- this invention is not limited to the Example mentioned above at all, and as long as it belongs to the technical scope of this invention, it cannot be overemphasized that it can implement with a various aspect.
- the hollow nanoparticles of the present invention and dispersions thereof can be used for materials such as novel catalysts, optoelectronic elements, biomolecular markers, and the like.
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Abstract
Description
(a)所定の金属をイオン液体に蒸着することにより、前記金属の中実ナノ粒子が分散したイオン液体を得る工程と、
(b)前記中実ナノ粒子が分散したイオン液体を、酸化ガスを含有するガス雰囲気中で酸化することにより、前記中実ナノ粒子のコア部分が空洞になった中空ナノ粒子を得る工程と、
を含むものである。
(a)第1の金属と該第1の金属よりも酸化されにくい第2の金属とをイオン液体に蒸着することにより、前記第1及び第2の金属からなる合金の中実ナノ粒子が分散したイオン液体を得る工程と、
(b)前記中実ナノ粒子が分散したイオン液体を、酸化ガスを含有するガス雰囲気中で酸化することにより、前記中実ナノ粒子のコア部分が空洞になると共に該空洞に前記第2の金属の粒子が残ったジングルベル型構造の中空ナノ粒子を得る工程と、
を含むものである。
(1)中実ナノ粒子の製法
EMI-BF4(1-エチル-3-メチルイミダゾリウムテトラフルオロホウ酸塩)を120℃で3時間減圧乾燥を行った。スライドガラス(26mm×38mm)上に、乾燥後のEMI-BF4 0.60cm3を均一にのせた。このとき、EMI-BF4は、その表面張力によりガラス基板からこぼれることはなかった。これを蒸着装置(サンユー電子社製SC701-HMCII)内に静置し、EMI-BF4に対向する位置にターゲット材としてインジウム(円板状、直径49mm×厚さ1.0mm)を装着し、インジウムのスパッタ蒸着を行った(ターゲットとイオン液体との距離:2.0cm、蒸着チャンバ内:高純度アルゴン(純度99.995%)、圧力:2.0Pa、蒸着電流:10mA、反応時間:10分)。スパッタ後、スライドガラス表面のEMI-BF4溶液すなわちナノ粒子が分散したイオン液体を回収した。
イオン液体中に分散したナノ粒子のTEM像を図2に、その粒径分布を図3に、コアサイズ分布を図4に示す。なお、TEM像は、透過型電子顕微鏡(日立ハイテクノロジーズ(株)社製、型式 H7650)を用いて観察した。このとき、TEMグリッドは市販のカーボン支持膜付きCuグリッド(応研商事、STEM100Cuグリッド)を使用し、測定用試料はスパッタ後のイオン液体をTEMグリッド上に滴下したのち、過剰のイオン液体をろ紙により除去して調製した。したがって、TEMグリッド上のナノ粒子はイオン液体から単離したものといえる。図2のナノ粒子は、薄いグレーのシェルと、この内部に存在する濃いグレーのコア粒子からなるコア・シェル構造を持ち、内部に空隙が観察されないことから、中の詰まった中実ナノ粒子であることがわかる。また、図3及び図4から、その中実ナノ粒子は、平均粒径が約8nm、コアサイズが約4nm、シェル厚が約2nmであることがわかる。この中実ナノ粒子につきXRD、XPSで解析を行った。その結果を図5及び図6に示す。図5のXRDパターンから、結晶としては金属インジウムと一致するピークのみ観察され、酸化インジウムと一致するピークは観察されなかった。また、図6のXPSから、粒子表面には金属インジウムではなく酸化インジウムと一致するピークが観察された。図5及び図6の結果から、この中実ナノ粒子は、コア部分に金属インジウムが存在し、シェル部分にアモルファスの酸化インジウムが存在するコア-シェル構造であるといえる。なお、シェル部分の酸化インジウムの酸素源は、アルゴンガス中に不純物として存在する微量の酸素ガスと考えられる。
上記(1)で得られた中実ナノ粒子が分散したイオン液体を試験管に0.1cm3とり、空気中で250℃、1時間加熱した。
空気中で加熱したあとのイオン液体に分散しているナノ粒子のTEM像を図7に、その粒径分布を図8に、粒子内部の空隙サイズ分布を図9に示す。図7のナノ粒子は、薄いグレーの円の周りを濃いグレーのリングが取り囲んでいることから、中が空洞になった中空ナノ粒子であることがわかる。また、図8及び図9から、その中空ナノ粒子は、平均粒径が約8nm、空隙サイズが約4nm、シェル厚が約2nmであることがわかる。この中空ナノ粒子につきXRDで解析を行った。その結果を図10に示す。図10のXRDパターンから、結晶としては酸化インジウムと一致するピークのみ観察された。このことから、この中空ナノ粒子は、結晶性のよい酸化インジウムの中空ナノ粒子であるといえる。なお、中空ナノ粒子の生成メカニズムは、図11に示すように、コア部分が金属インジウム、シェル部分が酸化インジウムの中実ナノ粒子を空気中で加熱すると、シェル部分の微小隙間を通じて空気中の酸素ガスとコア部分の金属インジウムとが反応して酸化インジウムが生成すると共にコア部分に空洞が生じたと考えられる。
実施例2~6では、上述した実施例1のイオン液体EMI-BF4の代わりに別のイオン液体を用いて中実ナノ粒子を製造した。具体的には、実施例2ではBMMI-BF4(1-ブチル-2,3-ジメチルイミダゾリウムテトラフルオロホウ酸塩)、実施例3ではBMI-PF6(1-ブチル-3-メチルイミダゾリウムヘキサフルオロリン酸塩)、実施例4ではBMI-BF4(1-ブチル-3-メチルイミダゾリウムテトラフルオロホウ酸塩)、実施例5ではAMI-BF4(1-アリル-3-メチルイミダゾリウムテトラフルオロホウ酸塩)、実施例6ではAEI-BF4(1-アリル-3-エチルイミダゾリウムテトラフルオロホウ酸塩)を用いた。そうしたところ、実施例2では粒径約6nm、実施例3では粒径約7nm、実施例4では粒径約10nm、実施例5では粒径約16nm、実施例6では粒径約18nmの中実ナノ粒子が得られた。これらのシェル厚はいずれも約2nmであった。また、各中実ナノ粒子につき、上述した実施例1と同様に空気中で250℃、1時間加熱したところ、もとの中実ナノ粒子とほぼ同じ粒径の中空ナノ粒子が得られた。
(1)中実ナノ粒子の製法
実施例1と同様のスライドガラス上に、乾燥後のEMI-BF4 0.60cm3を均一にのせた。これを実施例1と同様の蒸着装置内に静置し、EMI-BF4に対向する位置にターゲット材として銅(円板状、直径49mm×厚さ0.5mm)を装着し、銅のスパッタ蒸着を行った(ターゲットとイオン液体との距離:2.0cm、蒸着チャンバ内:高純度アルゴン、圧力:2.0Pa、蒸着電流:40mA、反応時間:10分)。スパッタ後、スライドガラス表面のEMI-BF4溶液すなわちナノ粒子が分散したイオン液体を回収した。
イオン液体中に分散したナノ粒子のTEM像を図12に、粒径分布を図13に示す。図12のナノ粒子は、均一な濃さのグレーの円として写っていることから、中の詰まった中実ナノ粒子であることがわかる。また、図13から、その中実ナノ粒子の平均粒径は約10nmであることがわかる。更に、スパッタ蒸着後のイオン液体の吸収スペクトルを図14に示す。580nm付近にCuナノ粒子の表面プラズモン共鳴に由来すると考えられるピークが見られた。このことから、中実ナノ粒子の表面は銅酸化物が存在していないか、存在しているとしても非常に薄い層として存在していることが示唆される。
上記(1)の中実ナノ粒子が分散したイオン液体を試験管に0.1cm3とり、空気中で250℃、1時間加熱した。
空気中で加熱したあとのイオン液体に分散しているナノ粒子のTEM像を図15に、その粒径分布を図16に示す。図15のナノ粒子は、薄いグレーの円の周りを濃いグレーのリングが取り囲んでいることから、中空ナノ粒子であることがわかる。図15から、その中空ナノ粒子は、シェル厚が約2.5nm、空隙サイズが約15nmであることがわかる。また、図16から、その中空ナノ粒子は、平均粒径が約20nmであることがわかる。この中空ナノ粒子につきXRDで解析を行った。その結果を図17に示す。図17のXRDパターンから、結晶としてはCu2Oと一致するピークのみ観察された。このことから、この中空ナノ粒子は、結晶性のよいCu2Oの中空ナノ粒子であることがわかる。なお、中実ナノ粒子から中空ナノ粒子に変化したのに伴って粒径が約2倍に増えているが、これは、まず加熱により中実粒子が凝集して粒子サイズが増大したあと、酸素ガスにより酸化されて中空粒子になったためであると考えられる。
(1)中実ナノ粒子の製法
実施例1と同様のスライドガラス上に、乾燥後のEMI-BF4 0.60cm3を均一にのせた。これを実施例1と同様の蒸着装置内に静置し、EMI-BF4に対向する位置にターゲット材として金とインジウムを装着し、両者の同時スパッタ蒸着を行った(ターゲットとイオン液体との距離:2.0cm、蒸着チャンバ内:高純度アルゴン、圧力:2.0Pa、蒸着電流:10mA、反応時間:10分)。スパッタ後、スライドガラス表面のEMI-BF4溶液すなわちナノ粒子が分散したイオン液体を回収した。なお、ターゲット材は、図18に示すように、円板の中心を通る3本の直線で6等分して6つの区域に分け、金とインジウムとが交互に並んだ金-インジウム交互配列板(直径49mm×厚さ0.5mm)を用いた。
イオン液体中に分散したナノ粒子のTEM像を図19に、その粒径分布を図20に示す。図19のナノ粒子は、均一の濃さのグレーの円として写っていることから、中の詰まった中実ナノ粒子であることがわかる。また、図20から、その中実ナノ粒子は、平均粒径が約6nmであることがわかる。
上記(1)で得られた中実ナノ粒子が分散したイオン液体を試験管に0.1cm3とり、空気中で250℃、1時間加熱した。
空気中で加熱したあとのイオン液体に分散しているナノ粒子のTEM像を図21に、その粒径分布を図22に示す。図21のナノ粒子は、薄いグレーの円の周りを濃いグレーのリングが取り囲んでいると共に、薄いグレーの円の中に一段と濃いグレーの小円が認められることから、中が空洞になった中空ナノ粒子であって、空洞に金粒子が存在するジングルベル型構造であることがわかる。図21から、この中空ナノ粒子は、空隙サイズが約6nm、内部の金のサイズが約4nmであることがわかる。また、図22から、この中空ナノ粒子は、平均粒径が約12nmであることがわかる。図23は、上記(1)で得られた中実ナノ粒子が分散したイオン液体の加熱前と加熱後の吸収スペクトルを示すグラフである。加熱後には、ピーク位置が長波長シフトし、約520nmに現れた。この波長は、Auナノ粒子の表面プラズモン共鳴ピークのものと良く一致する。このことから、インジウムと金の同時スパッタ蒸着によりイオン液体中に生成したInAu合金ナノ粒子を、空気中で加熱することによって、ナノ粒子のInのみが酸化されて脱合金化し、Auナノ粒子が生成したことが示唆される。ジングルベル型構造の中空ナノ粒子の生成メカニズムは、図24に示すように、上記(1)によりコア部分がインジウムと金、シェル部分が酸化インジウムの中実ナノ粒子が生成し、これを空気中で加熱すると、シェル部分の微小隙間を通じて空気中の酸素ガスとコア部分のインジウムとが反応して酸化インジウムが生成すると共にコア部分に空洞が生じるが、金は酸化されにくいためそのまま空洞に残ったと考えられる。
実施例1と同様のスライドガラス上に、乾燥後のEMI-BF4 0.60cm3を均一にのせた。これを実施例1と同様の蒸着装置内に静置し、EMI-BF4に対向する位置にターゲット材としてインジウムを装着し、スパッタ蒸着を行った(ターゲットとイオン液体との距離:2.0cm、蒸着チャンバ内:標準純度アルゴン(純度99.99%)、圧力:1.5Pa、蒸着電流:20mA、反応時間:10分)。スパッタ後、スライドガラス表面のEMI-BF4溶液すなわちナノ粒子が分散したイオン液体を回収した。イオン液体中に分散したナノ粒子のTEM像を図25に示す。図25には、中の詰まった中実ナノ粒子のほか、中が空洞の中空ナノ粒子も存在していることがわかる。中空ナノ粒子の数は全体の約10%程度であった。また、粒子サイズは18.3nm、内部のコアサイズは8.7nmであった。このような中空ナノ粒子が生成したメカニズムは、スパッタ蒸着によりイオン液体中に中実ナノ粒子が生成すると共に、この粒子中の金属インジウムコアが、アルゴンガス中に微量に存在する酸素ガスにより素早く酸化されて中空ナノ粒子になったと考えられる。
Claims (10)
- (a)所定の金属をイオン液体に蒸着することにより、前記金属の中実ナノ粒子が分散したイオン液体を得る工程と、
(b)前記中実ナノ粒子が分散したイオン液体を、酸化ガスを含有するガス雰囲気中で酸化することにより、前記中実ナノ粒子のコア部分が空洞になった中空ナノ粒子を得る工程と、
を含む中空ナノ粒子の製法。 - 前記工程(a)では、減圧下、希ガスがリッチな雰囲気で前記金属を前記イオン液体に蒸着し、前記工程(b)では、前記中実ナノ粒子が分散したイオン液体を、酸素ガスを含有するガス雰囲気中で加熱する、
請求項1に記載の中空ナノ粒子の製法。 - 前記工程(a)では、前記金属としてAl,Cr,Co,In,Cu,Sn,Ti,Ga,Mo,W,Si,Mg,V,Mn,Fe,Ni,Zn,Ge,Nb又はTaを使用し、前記中実ナノ粒子としてコア部分に前記金属が存在しシェル部分に前記金属の酸化物が存在するものを製造し、
前記工程(b)では、前記中実ナノ粒子が分散したイオン液体を、酸素ガスを含有するガス雰囲気中で加熱することにより、前記中空ナノ粒子として前記中実ナノ粒子と同等の径を持つものを製造する、
請求項1又は2に記載の中空ナノ粒子の製法。 - (a)第1の金属と該第1の金属よりも酸化されにくい第2の金属とをイオン液体に蒸着することにより、前記第1及び第2の金属からなる合金の中実ナノ粒子が分散したイオン液体を得る工程と、
(b)前記中実ナノ粒子が分散したイオン液体を、酸化ガスを含有するガス雰囲気中で酸化することにより、前記中実ナノ粒子のコア部分が空洞になると共に該空洞に前記第2の金属の粒子が残ったジングルベル型構造の中空ナノ粒子を得る工程と、
を含む中空ナノ粒子の製法。 - 前記工程(a)では、減圧下、希ガスがリッチな雰囲気で前記第1及び第2の金属を前記イオン液体に蒸着し、前記工程(b)では、前記中実ナノ粒子が分散したイオン液体を、酸素ガスを含有するガス雰囲気中で加熱する、
請求項4に記載の中空ナノ粒子の製法。 - 前記第1の金属はAl,Cr,Co,In,Cu,Sn,Ti,Ga,Mo,W,Si,Mg,V,Mn,Fe,Ni,Zn,Ge,Nb又はTaであり、前記第2の金属はAu,Pt,Pd,Rh,Ru又はIrである、
請求項4又は5に記載の中空ナノ粒子の製法。 - 金属酸化物からなり平均粒径が4nmを超え50nm以下の球状の中空ナノ粒子。
- 中空内部に前記金属酸化物を構成する金属よりも酸化されにくい金属が存在する、請求項7に記載の中空ナノ粒子。
- 前記金属酸化物を構成する金属は、Al,Cr,Co,In,Cu,Sn,Ti,Ga,Mo,W,Si,Mg,V,Mn,Fe,Ni,Zn,Ge,Nb又はTaである、請求項7又は8に記載の中空ナノ粒子。
- 請求項7~9のいずれか1項に記載の中空ナノ粒子をイオン液体に分散させた、中空ナノ粒子分散液。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2014027568A1 (ja) * | 2012-08-13 | 2016-07-25 | 千住金属工業株式会社 | インジウムボールおよびその製造方法 |
WO2019078100A1 (ja) * | 2017-10-16 | 2019-04-25 | 国立大学法人山形大学 | 固体微粒子で被覆された金属を含む複合体の製造方法 |
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DE102013220270B4 (de) * | 2012-10-15 | 2016-10-06 | GM Global Technology Operations, LLC (n.d. Ges. d. Staates Delaware) | Herstellung von hohlen PT- und PT-Legierungskatalysatoren |
US9425462B2 (en) | 2012-10-15 | 2016-08-23 | GM Global Technology Operations LLC | Preparation of hollow Pt and Pt-alloy catalysts |
JP6526635B2 (ja) | 2013-06-07 | 2019-06-05 | エルジー・ケム・リミテッド | 金属ナノ粒子 |
JP6176224B2 (ja) * | 2013-12-25 | 2017-08-09 | 日亜化学工業株式会社 | 半導体素子及びそれを備える半導体装置、並びに半導体素子の製造方法 |
US10385437B2 (en) * | 2016-01-13 | 2019-08-20 | Wisconsin Alumni Research Foundation | Synthesis of metal-oxygen based materials with controlled porosity by oxidative dealloying |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006224036A (ja) * | 2005-02-18 | 2006-08-31 | Hokkaido Univ | 光触媒及び光触媒反応方法 |
JP2007231306A (ja) * | 2006-02-27 | 2007-09-13 | Univ Nagoya | ナノ粒子の製造方法 |
WO2009064964A2 (en) * | 2007-11-15 | 2009-05-22 | The University Of California | Switchable nano-vehicle delivery systems, and methods for making and using them |
JP2009525396A (ja) * | 2006-01-17 | 2009-07-09 | ピーピージー インダストリーズ オハイオ インコーポレーテツド | 物理的蒸着によるイオン性液体中の粒子の生成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004035303A (ja) | 2002-07-02 | 2004-02-05 | Sangaku Renkei Kiko Kyushu:Kk | 無機酸化物中空粒子とその製造方法 |
JP2004130429A (ja) | 2002-10-10 | 2004-04-30 | National Institute For Materials Science | コア・シェル構造体とこのコア・シェル構造体から誘導されてなる中空酸化物シェル構造体およびこれらの製造方法 |
JP4058720B2 (ja) | 2003-08-29 | 2008-03-12 | 独立行政法人科学技術振興機構 | コア・シェル構造体からなる光記録媒体及びその調製方法 |
US7547347B2 (en) * | 2005-05-13 | 2009-06-16 | University Of Rochester | Synthesis of nano-materials in ionic liquids |
JP4478959B2 (ja) | 2006-11-13 | 2010-06-09 | 独立行政法人科学技術振興機構 | 内部に制御された空隙を有するコア・シェル構造体の調整方法と、該コア・シェル構造体を構成要素とする構造体の調製方法 |
JP2007111855A (ja) | 2006-11-13 | 2007-05-10 | Japan Science & Technology Agency | ナノ粒子複合体をコアとしたコア・シェル構造体及びそれを構成要素とする構造体並びにそれらとそれらから調製される構造体の調製方法 |
TWI307297B (en) * | 2006-12-14 | 2009-03-11 | Ind Tech Res Inst | Method for manufacturing metal nano particles having hollow structure |
GB0914390D0 (en) * | 2009-08-17 | 2009-09-30 | Univ St Andrews | Preparation of CoPt and FePt nanoparticles |
-
2010
- 2010-11-09 JP JP2011540511A patent/JP5799362B2/ja active Active
- 2010-11-09 WO PCT/JP2010/069951 patent/WO2011058976A1/ja active Application Filing
- 2010-11-09 US US13/508,217 patent/US8999225B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006224036A (ja) * | 2005-02-18 | 2006-08-31 | Hokkaido Univ | 光触媒及び光触媒反応方法 |
JP2009525396A (ja) * | 2006-01-17 | 2009-07-09 | ピーピージー インダストリーズ オハイオ インコーポレーテツド | 物理的蒸着によるイオン性液体中の粒子の生成方法 |
JP2007231306A (ja) * | 2006-02-27 | 2007-09-13 | Univ Nagoya | ナノ粒子の製造方法 |
WO2009064964A2 (en) * | 2007-11-15 | 2009-05-22 | The University Of California | Switchable nano-vehicle delivery systems, and methods for making and using them |
Non-Patent Citations (2)
Title |
---|
RYUSUKE NAKAMURA ET AL.: "Formation of Hollow Oxides via Oxidation of Metallic Nanoparticles", CATALYSTS & CATALYSIS, vol. 49, no. 5, 10 August 2007 (2007-08-10), pages 344 - 349 * |
Y.YIN ET AL.: "Formation of Hollow Nanocrystals Through the Nanoscale Kirkendall Effect", SCIENCE, vol. 304, 30 April 2004 (2004-04-30), pages 711 - 714, XP002562562, DOI: doi:10.1126/science.1096566 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2014027568A1 (ja) * | 2012-08-13 | 2016-07-25 | 千住金属工業株式会社 | インジウムボールおよびその製造方法 |
WO2019078100A1 (ja) * | 2017-10-16 | 2019-04-25 | 国立大学法人山形大学 | 固体微粒子で被覆された金属を含む複合体の製造方法 |
JPWO2019078100A1 (ja) * | 2017-10-16 | 2020-12-17 | 国立大学法人山形大学 | 固体微粒子で被覆された金属を含む複合体の製造方法 |
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