WO2011058810A1 - Électrode en saillie, élément semi-conducteur et dispositif semi-conducteur - Google Patents

Électrode en saillie, élément semi-conducteur et dispositif semi-conducteur Download PDF

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Publication number
WO2011058810A1
WO2011058810A1 PCT/JP2010/065269 JP2010065269W WO2011058810A1 WO 2011058810 A1 WO2011058810 A1 WO 2011058810A1 JP 2010065269 W JP2010065269 W JP 2010065269W WO 2011058810 A1 WO2011058810 A1 WO 2011058810A1
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Prior art keywords
bump electrode
conductive particles
bump
display panel
driving
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PCT/JP2010/065269
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English (en)
Japanese (ja)
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正己 上本
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シャープ株式会社
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Publication of WO2011058810A1 publication Critical patent/WO2011058810A1/fr

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    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Definitions

  • the present invention relates to a bump electrode, a semiconductor element, and a semiconductor device, and more particularly to a bump electrode, a semiconductor element, and a semiconductor device that are electrically connected via an anisotropic conductive layer.
  • display devices such as liquid crystal display devices and organic EL (Electro Luminescence) display devices have been widely used as display devices used for mobile phones and the like.
  • These display devices include a semiconductor device including a display panel (substrate) and a driving IC (Integrated Circuit) electrically connected to the display panel.
  • a driving IC semiconductor element
  • anisotropic conductive film anisotropic conductive layer
  • An anisotropic conductive film is obtained by dispersing conductive particles in an insulating adhesive layer.
  • the driving IC and the display panel are electrically connected.
  • FIG. 10 is a cross-sectional view showing the structure of a conventional semiconductor device 501 in which the driving IC 510 is mounted face-down on the display panel 520 via the anisotropic conductive film 530.
  • FIG. 11 is an enlarged cross-sectional view showing a state in which the driving IC 510 and the display panel 520 are normally electrically connected in the semiconductor device 501 according to the conventional example shown in FIG.
  • a semiconductor device 501 electrically connects a driving IC 510, a display panel 520 on which the driving IC 510 is mounted face down, and the driving IC 510 and the display panel 520 to each other.
  • the anisotropic conductive film 530 is provided.
  • a plurality of bump electrodes 512 having a predetermined bump height are provided on the main surface 511a of the semiconductor substrate 511 of the driving IC 510. Further, the connection surface 512a of the bump electrode 512 (the surface of the anisotropic conductive film 530 that comes into contact with conductive particles 532 described later) is formed on a flat surface.
  • the flat surface includes not only a completely flat surface but also a surface on which convex portions and concave portions having a step of 0.5 ⁇ m or less are formed.
  • the display panel 520 is provided with a plurality of wiring electrodes 521 at positions corresponding to the bump electrodes 512 of the driving IC 510.
  • the anisotropic conductive film 530 includes an insulating adhesive layer 531 and a plurality of conductive particles 532 dispersed in the adhesive layer 531.
  • the conductive particles 532 are brought into contact with the bump electrodes 512 of the driving IC 510 and the wiring electrodes 521 of the display panel 520, whereby the driving IC 510 and the display panel 520 are electrically connected to each other.
  • Patent Document 1 a structure in which a semiconductor element on which a bump electrode is formed is mounted face-down on a substrate via an anisotropic conductive layer is known (for example, see Patent Document 1).
  • Patent Document 1 discloses an LCD driver (semiconductor element), a substrate on which the LCD driver is mounted face-down, and an anisotropic conductive film (an anisotropic conductive layer) for electrically connecting the LCD driver and the substrate to each other. ) Is disclosed.
  • a plurality of bump electrodes are provided on the main surface of the LCD driver.
  • a surface of the bump electrode on the substrate side is provided with a flat portion made of a flat surface in contact with the conductive particles (conductive particles) of the anisotropic conductive film, and a stopper provided around the flat portion. .
  • the stopper is formed so as to protrude from the flat portion to the substrate side.
  • the substrate is provided with a plurality of electrodes at positions corresponding to the bump electrodes of the LCD driver.
  • the plurality of bump electrodes 512 of the driving IC 510 may not all have the same bump height due to manufacturing variations.
  • the bump electrode 512b when a bump electrode 512b having a predetermined bump height and a bump electrode 512c having a bump height smaller than the bump electrode 512b are formed, the bump electrode 512b is formed of conductive particles 532.
  • the bump electrode 512c is not electrically connected to the wiring electrode 521. That is, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520.
  • the anisotropic conductive film 530 when the anisotropic conductive film 530 is sandwiched between the driving IC 510 and the display panel 520, the conductive particles 532 pass through the anisotropic conductive film 530 in the horizontal direction (A direction) (on the main surface 511 a of the semiconductor substrate 511. (Parallel direction).
  • the density of the conductive particles 532 between the bump electrode 512 and the wiring electrode 521 decreases due to the movement of the conductive particles 532, as shown in FIG. 13, between the bump electrode 512 and the wiring electrode 521, The conductive particles 532 may not exist. In this case, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520. Further, when the conductive particles 532 no longer exist between the bump electrode 512 and the wiring electrode 521, the bump electrode 512 directly contacts the wiring electrode 521, and a pressing force is easily applied to the driving IC 510. There is also a problem that the circuit may be damaged.
  • connection surface 512 of the bump electrode 512 when the entire connection surface 512 of the bump electrode 512 is formed in a convex shape, the conductive particles 532 are more easily moved from between the bump electrode 512 and the wiring electrode 521 to the outside. Therefore, a connection failure between the driving IC 510 and the display panel 520 is more likely to occur.
  • the vertical direction (B direction) (the A direction and When the conductive particles 532 arranged in the (perpendicular direction) are sandwiched between the bump electrode 512 and the wiring electrode 521, the conductive particles 532 may be plastically deformed and crushed. Even in this case, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520.
  • connection surface 512a of the bump electrode 512 When the connection surface 512a of the bump electrode 512 is formed to be inclined with respect to the main surface 511a of the semiconductor substrate 511, the conductive particles between the bump electrode 512 and the wiring electrode 521 depend on the inclination direction of the connection surface 512a. The density of 532 tends to decrease or increase. For this reason, a connection failure is likely to occur between the driving IC 510 and the display panel 520.
  • Patent Document 1 the density of the conductive particles in the vicinity of the bump electrode stopper tends to be high between the bump electrode and the substrate electrode. For this reason, like the semiconductor device 501 according to the conventional example shown in FIG. 15, the conductive particles are easily arranged in the vertical direction (direction from the bump electrode to the electrode of the substrate), and the conductive particles are arranged between the bump electrode and the substrate electrode. May be crushed due to plastic deformation. Therefore, there is a problem that a connection failure occurs between the LCD driver and the substrate.
  • Patent Document 1 when the bump electrodes of the LCD driver do not all have the same bump height due to manufacturing variations, the electrodes on the substrate are electrically connected to the electrodes of the substrate as in the conventional semiconductor device 501 shown in FIG. Bump electrodes that are not connected to each other are generated. That is, there is a problem that a connection failure occurs between the LCD driver and the substrate.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to cause poor connection between a semiconductor element and a substrate while suppressing damage to the semiconductor element. It is an object to provide a bump electrode, a semiconductor element, and a semiconductor device capable of suppressing the above.
  • a bump electrode according to a first aspect of the present invention is a bump electrode included in at least one of a semiconductor element and a substrate that are electrically connected to each other through an anisotropic conductive layer.
  • the surface electrically connected to the anisotropic conductive layer is formed to include an uneven shape having a plurality of recesses and a plurality of protrusions, and the step between the recesses and the protrusions is anisotropically conductive. It has a size of 45% or more with respect to the particle size of the conductive particles contained in the layer, and the convex portion is provided to be electrically connected to the conductive particles and pressed by the conductive particles. It is formed so as to be deformed by.
  • the surface electrically connected to the anisotropic conductive layer is formed so as to include a concavo-convex shape having a plurality of concave portions and a plurality of convex portions.
  • the anisotropic conductive layer is sandwiched between the semiconductor element and the substrate, the conductive particles contained in the anisotropic conductive layer can be prevented from moving on the bump electrode. Thereby, since it can suppress that the density of a conductive particle becomes low locally on a bump electrode or becomes high, the density of the conductive particle on a bump electrode can be made uniform.
  • the conductive particles are arranged in the vertical direction (direction from the semiconductor element toward the substrate) between the semiconductor element and the substrate. Can be suppressed. As a result, the conductive particles can be prevented from being deformed by plastic deformation and being crushed by being sandwiched between the semiconductor element and the substrate, so that poor connection between the semiconductor element and the substrate can be prevented. Can be suppressed.
  • the step between the concave portion and the convex portion is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles. It can suppress that the level
  • the convex portion is formed to be deformed by being pressed by the conductive particles.
  • the bump electrode can be further pressed to the conductive particle side from the state where the bump electrode having a large bump height is in contact with the conductive particles.
  • it can suppress that a bump electrode with small bump height stops contacting an electrically-conductive particle, it can further suppress that a connection defect generate
  • the step between the concave portion and the convex portion is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles. Even when the variation is large, it is possible to easily suppress a connection failure between the semiconductor element and the substrate.
  • the plurality of recesses are formed to have a width smaller than the particle size of the conductive particles. If comprised in this way, it can suppress that a conductive particle enters the inside of a recessed part. That is, it is possible to prevent the conductive particles from being electrically connected to the bump electrode protrusions.
  • the plurality of convex portions are formed to have a width smaller than the particle size of the conductive particles. If comprised in this way, it can suppress that a convex part becomes difficult to deform
  • the plurality of concave portions and the plurality of convex portions are formed in a region of 30% or more of the surface electrically connected to the anisotropic conductive layer. If comprised in this way, when an anisotropic conductive layer is inserted
  • the step between the concave portion and the convex portion has a size of 100% or less with respect to the particle size of the conductive particles. If comprised in this way, it can suppress that an electrically-conductive particle enters the inside of a recessed part, and is no longer electrically connected with a convex part.
  • the step between the concave portion and the convex portion has a size of ⁇ 2 ⁇ m or more and 0 ⁇ m or less with respect to the particle size of the conductive particles.
  • the step between the recess and the projection becomes the particle size of the conductive particle. On the other hand, it can be easily suppressed from becoming too small.
  • the conductive particles enter the concave portion and are electrically connected to the convex portion. Elimination can be easily suppressed.
  • the convex portion preferably has a hardness smaller than that of the conductive particles. If comprised in this way, a convex part can be easily formed so that it may deform
  • “the convex portion has a hardness smaller than that of the conductive particles” means that when the convex portions are pressed against the conductive particles, the convex portions are plastically deformed before the conductive particles are plastically deformed.
  • At least the convex portion is formed of Au. If comprised in this way, a convex part can be easily formed so that it may deform
  • a semiconductor element according to a second aspect of the present invention includes a bump electrode having the above configuration. If comprised in this way, the semiconductor element which can suppress that a connection failure generate
  • a semiconductor device includes the semiconductor element having the above structure and a substrate electrically connected to the semiconductor element via an anisotropic conductive layer. If comprised in this way, the semiconductor device which can suppress that a connection defect generate
  • the bump electrode, the semiconductor element, and the semiconductor capable of suppressing the occurrence of connection failure between the semiconductor element and the substrate while suppressing the damage of the semiconductor element.
  • the device can be easily obtained.
  • FIG. 2 is an exploded cross-sectional view illustrating a structure of a semiconductor device including the driving IC according to the embodiment of the present invention illustrated in FIG. 1.
  • FIG. 2 is an enlarged cross-sectional view illustrating a structure of a bump electrode of the driving IC according to the embodiment of the present invention illustrated in FIG. 1.
  • FIG. 2 is an enlarged cross-sectional view illustrating a structure of a bump electrode of the driving IC according to the embodiment of the present invention illustrated in FIG. 1.
  • FIG. 2 is an enlarged cross-sectional view illustrating a connection state between a driving IC and a liquid crystal display panel according to an embodiment of the present invention illustrated in FIG.
  • FIG. 2 is an enlarged cross-sectional view illustrating a connection state between a driving IC and a liquid crystal display panel according to an embodiment of the present invention illustrated in FIG. 1. It is the expanded sectional view which showed the structure of the liquid crystal display panel containing the bump electrode by the 1st modification of this invention. It is the expanded sectional view which showed the structure of the bump electrode by the 2nd modification of this invention. It is the expanded sectional view which showed the structure of the bump electrode by the 3rd modification of this invention. It is sectional drawing which showed the structure of the semiconductor device by a conventional example by which the drive IC was mounted face-down on the display panel via the anisotropic conductive film.
  • FIG. 1 the structure of the liquid crystal display panel containing the bump electrode by the 1st modification of this invention.
  • the expanded sectional view which showed the structure of the bump electrode by the 2nd modification of this invention.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a driving IC and a display panel are normally electrically connected in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • the semiconductor device 1 is used in, for example, a liquid crystal display device. 1 and 2, the semiconductor device 1 electrically connects the driving IC 10, the liquid crystal display panel 20 on which the driving IC 10 is mounted face down, and the driving IC 10 and the liquid crystal display panel 20 to each other. And an ACF (anisotropic conductive film) 30 for connection.
  • the driving IC 10 is an example of the “semiconductor element” in the present invention
  • the liquid crystal display panel 20 is an example of the “substrate” in the present invention.
  • the ACF 30 is an example of the “anisotropic conductive layer” in the present invention.
  • the driving IC 10 includes a semiconductor substrate 11 made of silicon or the like, a plurality of wiring portions 12 provided in a predetermined region on the main surface 11a of the semiconductor substrate 11, and a plurality of bump electrodes provided on the plurality of wiring portions 12. 13 and so on.
  • the wiring part 12 is made of, for example, Al.
  • the wiring part 12 may be formed with metals other than Al, such as Cu, for example.
  • the surface of the wiring part 12 is formed in the flat surface.
  • the plurality of bump electrodes 13 are made of, for example, Au.
  • the bump electrode 13 may be formed of a metal other than Au.
  • the bump electrode 13 is formed to have, for example, a bump height H1 of about 15 ⁇ m (about 12 ⁇ m to about 20 ⁇ m) and an area of about 50 ⁇ m ⁇ about 50 ⁇ m.
  • the bump height H1 refers to the height from the interface between the bump electrode 13 and the wiring portion 12 to the tip of a convex portion 13c (described later) of the bump electrode 13.
  • connection surface 13a of the bump electrode 13 (surface electrically connected to the conductive particles 32 described later of the ACF 30) is an uneven surface having a plurality of recesses 13b and a plurality of protrusions 13c. It is formed into a shape.
  • the connection surface 13a is an example of the “surface” in the present invention.
  • the step H2 between the concave portion 13b and the convex portion 13c has a size of about 1.5 ⁇ m or more and 2.5 ⁇ m or less, for example.
  • the plurality of recesses 13 b have a width W ⁇ b> 1 that is smaller than the particle size of conductive particles 32 (see FIG. 5) described later of the ACF 30.
  • the plurality of convex portions 13 c also have a width W ⁇ b> 2 that is smaller than the particle size of the conductive particles 32.
  • the bump electrode 13 is formed so that a line (not shown) connecting the tips of the plurality of convex portions 13 c is substantially parallel to the main surface 11 a of the semiconductor substrate 11.
  • the bump electrode 13 can be formed by, for example, an electrolytic plating method.
  • the plurality of concave portions 13b and convex portions 13c of the bump electrode 13 are controlled by plating conditions such as increasing the plating speed, or by chemically or mechanically surface-treating the connection surface 13a of the bump electrode 13, It can be easily formed.
  • the liquid crystal display panel 20 is provided with a plurality of wiring electrodes 21 at positions corresponding to the plurality of bump electrodes 13 of the driving IC 10.
  • the ACF 30 includes an adhesive layer 31 made of an insulating resin film and a plurality of conductive particles 32 contained in the adhesive layer 31.
  • the conductive particles 32 are formed by coating resin particles serving as a core with a metal layer or metal particles. Further, the conductive particles 32 are arranged at a uniform density between the bump electrodes 13 and the wiring electrodes 21 of the liquid crystal display panel 20.
  • the conductive particles 32 are sandwiched between the bump electrodes 13 of the driving IC 10 and the wiring electrodes 21 of the liquid crystal display panel 20, whereby the driving IC 10 and the liquid crystal display panel 20 are electrically connected to each other. It is connected.
  • the bumps 13 of the driving IC 10 are bump electrodes 13d having a desired bump height
  • the bumps 13 are sandwiched between the driving IC 12 and the liquid crystal display panel 20 and the ACF 30 is sandwiched between them.
  • the tips of the plurality of convex portions 13 c of the electrode 13 d are crushed by the conductive particles 32.
  • the convex portion 13c that is most crushed by the conductive particles 32 is, for example, crushed more than half with respect to the step H2 (see FIG. 3).
  • the bump electrode 13 d is electrically connected to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
  • a bump electrode 13d having a desired bump height and a bump electrode 13e having a bump height smaller than the bump electrode 13d are formed in the driving IC 10.
  • the bump electrode 13d is crushed by the conductive particles 32 at the tip of the convex portion 13c to the same extent as the bump electrode 13d shown in FIG.
  • the tip of the convex portion 13c of the bump electrode 13e is crushed by, for example, half or less of the step H2 (see FIG. 3). That is, the tip of the bump electrode 13e having a bump height smaller than that of the bump electrode 13d is crushed by an amount smaller than that of the bump electrode 13d.
  • the bump electrode 13 e is also electrically connected to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
  • the driving IC 10 when the driving IC 10 is connected to the liquid crystal display panel 20 via the conductive particles 32 (ACF 30), the bump electrodes 13d of the driving IC 10 are connected to the wiring electrodes 21 of the liquid crystal display panel 20 via the conductive particles 32. From the connected (pressed) state, the driving IC 10 is further pressed toward the liquid crystal display panel 20. Thereby, the bump electrode 13 e is also connected (pressed) to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
  • the tip of the convex portion 13 c of the bump electrode 13 is arranged at a predetermined distance from the wiring electrode 21 of the liquid crystal display panel 20, but the tip of the convex portion 13 c of the bump electrode 13 is arranged. May be in direct contact with the wiring electrode 21 of the liquid crystal display panel 20.
  • the tip of the convex portion 13c is crushed by the wiring electrode 21, it is possible to suppress the pressing force from being applied to the circuit of the driving IC 10, and the circuit of the driving IC 10 is damaged. It is possible to suppress this.
  • connection surface 13a of the bump electrode 13 is formed in a concavo-convex shape having a plurality of concave portions 13b and a plurality of convex portions 13c, whereby the driving IC 10 and the liquid crystal display panel 20 use the ACF 30. It is possible to prevent the conductive particles 32 of the ACF 30 from moving in the lateral direction (A direction) (direction parallel to the main surface 11a of the semiconductor substrate 11) on the bump electrode 13 when sandwiching. Thereby, since it can suppress that the density of the electroconductive particle 32 becomes low locally between the bump electrode 13 and the wiring electrode 21, it can suppress, The density of the electroconductive particle 32 on the bump electrode 13 Can be made uniform.
  • the conductive particles 32 can be prevented from moving outward from between the bump electrodes 13 and the wiring electrodes 21 of the liquid crystal display panel 20, the conductive particles 32 are between the bump electrodes 13 and the wiring electrodes 21. It can suppress that it does not exist. As a result, it is possible to prevent the driving IC 10 and the liquid crystal display panel 20 from being electrically connected by the conductive particles 32, so that a connection failure occurs between the driving IC 10 and the liquid crystal display panel 20. Can be suppressed. Moreover, since it can suppress that the electrically-conductive particle 32 does not exist between the bump electrode 13 and the wiring electrode 21, it suppresses that the bump electrode 13 contacts the wiring electrode 21 of the liquid crystal display panel 20 directly. Can do. Thereby, since it can suppress that pressing force is applied to the drive IC 10, it is possible to further suppress the circuit of the drive IC 10 from being damaged.
  • the density of the conductive particles 32 is locally increased between the bump electrode 13 and the wiring electrode 21, the vertical direction between the conductive particle 32 bump electrode 13 and the wiring electrode 21 can be prevented. Arrangement in the (B direction) (direction perpendicular to the A direction) can be suppressed. As a result, the conductive particles 32 can be prevented from being plastically deformed and crushed by being sandwiched between the bump electrode 13 and the wiring electrode 21, so that the drive IC 10 and the liquid crystal display panel 20 can be suppressed. The occurrence of poor connection can be further suppressed.
  • the step H2 between the concave portion 13b and the convex portion 13c is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles 32. Can be suppressed from becoming too small with respect to the particle size of the conductive particles 32. Thereby, it can suppress effectively that the electrically-conductive particle 32 moves on the bump electrode 13.
  • the convex portion 13 c is formed so as to be deformed by being pressed by the conductive particles 32.
  • the bump electrode 13d driving IC 10
  • the bump electrode 13d driving IC 10
  • the bump electrode 13e driving IC 10
  • the liquid crystal display panel 20 the convex portion 13 c is formed so as to be deformed by being pressed by the conductive particles 32.
  • the step H2 between the concave portion 13b and the convex portion 13c is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles 32. Even when the height variation is large, it is possible to easily suppress a connection failure between the driving IC 10 and the liquid crystal display panel 20.
  • the plurality of recesses 13b are formed to have a width W1 smaller than the particle diameter of the conductive particles 32, thereby suppressing the conductive particles 32 from entering the recesses 13b. Can do. That is, it is possible to prevent the conductive particles 32 from being electrically connected to the convex portion 13 c of the bump electrode 13.
  • the convex portion 13c by forming the plurality of convex portions 13c to have a width W2 smaller than the particle size of the conductive particles 32, it is possible to suppress the convex portions 13c from being easily deformed. Therefore, the convex portion 13 c can be easily formed so as to be deformed by being pressed by the conductive particles 32.
  • the ACF 30 when the ACF 30 is sandwiched between the driving IC 10 and the liquid crystal display panel 20 by forming the plurality of concave portions 13b and the plurality of convex portions 13c in substantially the entire area of the connection surface 13a.
  • the movement of the conductive particles 32 on the bump electrode 13 can be effectively suppressed.
  • the conductive particles 32 can be further suppressed from moving outward from between the bump electrode 13 and the wiring electrode 21, and the density of the conductive particles 32 between the bump electrode 13 and the wiring electrode 21 can be further increased. It can be made uniform.
  • the step H2 between the concave portion 13b and the convex portion 13c is set to 100% or less with respect to the particle size of the conductive particles 32, so that the conductive particles 32 become the concave portions 13b. Can be prevented from entering the interior of the lens and being not electrically connected to the convex portion 13c.
  • the bump electrode 13 is formed of Au, so that the convex portion 13 c can be easily formed so as to be deformed by being pressed by the conductive particles 32. .
  • the bump electrode 122 may be provided on the liquid crystal display panel (substrate) 120.
  • a driving IC is used as a semiconductor element and a liquid crystal display panel is used as a substrate
  • the present invention is not limited thereto, and a semiconductor element other than the driving IC is used as a semiconductor element.
  • a substrate other than the liquid crystal display panel may be used as the substrate.
  • ACF anisotropic conductive layer
  • ACP anisotropic conductive paste
  • step difference between a recessed part and a convex part was shown. It is more effective to further increase the particle size of the conductive particles. That is, if the step between the concave portion and the convex portion is formed so as to be larger than 50% of the particle size of the conductive particles or have a size of 70% or more, the bump height between the plurality of bump electrodes is increased. Even when the variation is larger, it is possible to easily suppress a connection failure between the driving IC and the liquid crystal display panel.
  • the present invention is not limited thereto, and the substantially entire connection surface may not be formed in a concavo-convex shape.
  • the bump electrode 13 and the liquid crystal display panel 20 can be formed by forming a region of 30% or more of the connection surface 13 a in a concave-convex shape. It was confirmed that the wiring electrode 21 was electrically connected well.
  • the bump electrode is shown as an example in which the line connecting the tips of the plurality of protrusions is formed substantially parallel to the main surface of the semiconductor substrate.
  • the present invention is not limited to this.
  • the bump electrode 213 is formed so that a line (not shown) connecting the tips of the plurality of convex portions 213c has a convex shape. Also good. Also in this case, it is possible to prevent the conductive particles from moving on the bump electrode 213 by the plurality of convex portions 213c.
  • the gaps 313 b of the bump electrodes 313 and the gaps 313 c are substantially parallel to the main surface 11 a of the semiconductor substrate 11. It may be formed. Also in this case, the width W11 of the concave portion 313b and the width W12 of the convex portion 313c are preferably smaller than the particle diameter of the conductive particles.
  • SYMBOLS 1 Semiconductor device 10 Drive IC (semiconductor element) 13, 13d, 13e, 122, 213, 313 Bump electrode 13a Connection surface (surface) 13b, 313b Concave part 13c, 213c, 313c Convex part 20, 120 Liquid crystal display panel (substrate) 30 ACF (anisotropic conductive layer) 32 Conductive particle H2 Level difference W1, W11 width W2, W12 width

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Liquid Crystal (AREA)

Abstract

L'invention concerne une électrode en saillie pouvant minimiser les problèmes de connexion entre un élément semi-conducteur et un substrat tout en minimisant également les dommages pour l'élément semi-conducteur. Dans l'électrode en saillie (13) réalisée, on forme une surface de connexion (13a) de manière à ce que celle-ci comprenne un élément en saillie comportant une pluralité d'indentations (13b) et une pluralité de saillies (13c). La différence de hauteur (H2) entre les indentations et les saillies est au moins égale à 45 % du diamètre des particules conductrices (32) contenues dans un film conducteur anisotrope (30). Les saillies sont destinées à se connecter électriquement avec les particules conductrices et sont conçues pour se déformer du fait de la pression exercée par les particules conductrices.
PCT/JP2010/065269 2009-11-16 2010-09-07 Électrode en saillie, élément semi-conducteur et dispositif semi-conducteur WO2011058810A1 (fr)

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JP2009260686 2009-11-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113823637A (zh) * 2020-06-19 2021-12-21 元太科技工业股份有限公司 电子装置
US11985763B2 (en) 2020-06-19 2024-05-14 E Ink Holdings Inc. Electronic device

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JP2001110832A (ja) * 1999-10-05 2001-04-20 Electroplating Eng Of Japan Co 回路基板の実装方法及び金めっき液並びに金めっき方法
JP2002217238A (ja) * 2001-01-19 2002-08-02 Matsushita Electric Ind Co Ltd 半導体素子及びその半導体素子の実装方法
JP2004079710A (ja) * 2002-08-14 2004-03-11 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP2005072202A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 端子電極、配線基板、半導体装置、半導体モジュール、電子機器、端子電極の製造方法および半導体モジュールの製造方法

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Publication number Priority date Publication date Assignee Title
JP2001110832A (ja) * 1999-10-05 2001-04-20 Electroplating Eng Of Japan Co 回路基板の実装方法及び金めっき液並びに金めっき方法
JP2002217238A (ja) * 2001-01-19 2002-08-02 Matsushita Electric Ind Co Ltd 半導体素子及びその半導体素子の実装方法
JP2004079710A (ja) * 2002-08-14 2004-03-11 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP2005072202A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 端子電極、配線基板、半導体装置、半導体モジュール、電子機器、端子電極の製造方法および半導体モジュールの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113823637A (zh) * 2020-06-19 2021-12-21 元太科技工业股份有限公司 电子装置
CN113823637B (zh) * 2020-06-19 2024-05-10 元太科技工业股份有限公司 电子装置
US11985763B2 (en) 2020-06-19 2024-05-14 E Ink Holdings Inc. Electronic device

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