WO2011058810A1 - Bump electrode, semiconductor element, and semiconductor device - Google Patents

Bump electrode, semiconductor element, and semiconductor device Download PDF

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Publication number
WO2011058810A1
WO2011058810A1 PCT/JP2010/065269 JP2010065269W WO2011058810A1 WO 2011058810 A1 WO2011058810 A1 WO 2011058810A1 JP 2010065269 W JP2010065269 W JP 2010065269W WO 2011058810 A1 WO2011058810 A1 WO 2011058810A1
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WIPO (PCT)
Prior art keywords
bump electrode
conductive particles
bump
display panel
driving
Prior art date
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PCT/JP2010/065269
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French (fr)
Japanese (ja)
Inventor
正己 上本
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シャープ株式会社
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Publication date
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Publication of WO2011058810A1 publication Critical patent/WO2011058810A1/en

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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Definitions

  • the present invention relates to a bump electrode, a semiconductor element, and a semiconductor device, and more particularly to a bump electrode, a semiconductor element, and a semiconductor device that are electrically connected via an anisotropic conductive layer.
  • display devices such as liquid crystal display devices and organic EL (Electro Luminescence) display devices have been widely used as display devices used for mobile phones and the like.
  • These display devices include a semiconductor device including a display panel (substrate) and a driving IC (Integrated Circuit) electrically connected to the display panel.
  • a driving IC semiconductor element
  • anisotropic conductive film anisotropic conductive layer
  • An anisotropic conductive film is obtained by dispersing conductive particles in an insulating adhesive layer.
  • the driving IC and the display panel are electrically connected.
  • FIG. 10 is a cross-sectional view showing the structure of a conventional semiconductor device 501 in which the driving IC 510 is mounted face-down on the display panel 520 via the anisotropic conductive film 530.
  • FIG. 11 is an enlarged cross-sectional view showing a state in which the driving IC 510 and the display panel 520 are normally electrically connected in the semiconductor device 501 according to the conventional example shown in FIG.
  • a semiconductor device 501 electrically connects a driving IC 510, a display panel 520 on which the driving IC 510 is mounted face down, and the driving IC 510 and the display panel 520 to each other.
  • the anisotropic conductive film 530 is provided.
  • a plurality of bump electrodes 512 having a predetermined bump height are provided on the main surface 511a of the semiconductor substrate 511 of the driving IC 510. Further, the connection surface 512a of the bump electrode 512 (the surface of the anisotropic conductive film 530 that comes into contact with conductive particles 532 described later) is formed on a flat surface.
  • the flat surface includes not only a completely flat surface but also a surface on which convex portions and concave portions having a step of 0.5 ⁇ m or less are formed.
  • the display panel 520 is provided with a plurality of wiring electrodes 521 at positions corresponding to the bump electrodes 512 of the driving IC 510.
  • the anisotropic conductive film 530 includes an insulating adhesive layer 531 and a plurality of conductive particles 532 dispersed in the adhesive layer 531.
  • the conductive particles 532 are brought into contact with the bump electrodes 512 of the driving IC 510 and the wiring electrodes 521 of the display panel 520, whereby the driving IC 510 and the display panel 520 are electrically connected to each other.
  • Patent Document 1 a structure in which a semiconductor element on which a bump electrode is formed is mounted face-down on a substrate via an anisotropic conductive layer is known (for example, see Patent Document 1).
  • Patent Document 1 discloses an LCD driver (semiconductor element), a substrate on which the LCD driver is mounted face-down, and an anisotropic conductive film (an anisotropic conductive layer) for electrically connecting the LCD driver and the substrate to each other. ) Is disclosed.
  • a plurality of bump electrodes are provided on the main surface of the LCD driver.
  • a surface of the bump electrode on the substrate side is provided with a flat portion made of a flat surface in contact with the conductive particles (conductive particles) of the anisotropic conductive film, and a stopper provided around the flat portion. .
  • the stopper is formed so as to protrude from the flat portion to the substrate side.
  • the substrate is provided with a plurality of electrodes at positions corresponding to the bump electrodes of the LCD driver.
  • the plurality of bump electrodes 512 of the driving IC 510 may not all have the same bump height due to manufacturing variations.
  • the bump electrode 512b when a bump electrode 512b having a predetermined bump height and a bump electrode 512c having a bump height smaller than the bump electrode 512b are formed, the bump electrode 512b is formed of conductive particles 532.
  • the bump electrode 512c is not electrically connected to the wiring electrode 521. That is, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520.
  • the anisotropic conductive film 530 when the anisotropic conductive film 530 is sandwiched between the driving IC 510 and the display panel 520, the conductive particles 532 pass through the anisotropic conductive film 530 in the horizontal direction (A direction) (on the main surface 511 a of the semiconductor substrate 511. (Parallel direction).
  • the density of the conductive particles 532 between the bump electrode 512 and the wiring electrode 521 decreases due to the movement of the conductive particles 532, as shown in FIG. 13, between the bump electrode 512 and the wiring electrode 521, The conductive particles 532 may not exist. In this case, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520. Further, when the conductive particles 532 no longer exist between the bump electrode 512 and the wiring electrode 521, the bump electrode 512 directly contacts the wiring electrode 521, and a pressing force is easily applied to the driving IC 510. There is also a problem that the circuit may be damaged.
  • connection surface 512 of the bump electrode 512 when the entire connection surface 512 of the bump electrode 512 is formed in a convex shape, the conductive particles 532 are more easily moved from between the bump electrode 512 and the wiring electrode 521 to the outside. Therefore, a connection failure between the driving IC 510 and the display panel 520 is more likely to occur.
  • the vertical direction (B direction) (the A direction and When the conductive particles 532 arranged in the (perpendicular direction) are sandwiched between the bump electrode 512 and the wiring electrode 521, the conductive particles 532 may be plastically deformed and crushed. Even in this case, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520.
  • connection surface 512a of the bump electrode 512 When the connection surface 512a of the bump electrode 512 is formed to be inclined with respect to the main surface 511a of the semiconductor substrate 511, the conductive particles between the bump electrode 512 and the wiring electrode 521 depend on the inclination direction of the connection surface 512a. The density of 532 tends to decrease or increase. For this reason, a connection failure is likely to occur between the driving IC 510 and the display panel 520.
  • Patent Document 1 the density of the conductive particles in the vicinity of the bump electrode stopper tends to be high between the bump electrode and the substrate electrode. For this reason, like the semiconductor device 501 according to the conventional example shown in FIG. 15, the conductive particles are easily arranged in the vertical direction (direction from the bump electrode to the electrode of the substrate), and the conductive particles are arranged between the bump electrode and the substrate electrode. May be crushed due to plastic deformation. Therefore, there is a problem that a connection failure occurs between the LCD driver and the substrate.
  • Patent Document 1 when the bump electrodes of the LCD driver do not all have the same bump height due to manufacturing variations, the electrodes on the substrate are electrically connected to the electrodes of the substrate as in the conventional semiconductor device 501 shown in FIG. Bump electrodes that are not connected to each other are generated. That is, there is a problem that a connection failure occurs between the LCD driver and the substrate.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to cause poor connection between a semiconductor element and a substrate while suppressing damage to the semiconductor element. It is an object to provide a bump electrode, a semiconductor element, and a semiconductor device capable of suppressing the above.
  • a bump electrode according to a first aspect of the present invention is a bump electrode included in at least one of a semiconductor element and a substrate that are electrically connected to each other through an anisotropic conductive layer.
  • the surface electrically connected to the anisotropic conductive layer is formed to include an uneven shape having a plurality of recesses and a plurality of protrusions, and the step between the recesses and the protrusions is anisotropically conductive. It has a size of 45% or more with respect to the particle size of the conductive particles contained in the layer, and the convex portion is provided to be electrically connected to the conductive particles and pressed by the conductive particles. It is formed so as to be deformed by.
  • the surface electrically connected to the anisotropic conductive layer is formed so as to include a concavo-convex shape having a plurality of concave portions and a plurality of convex portions.
  • the anisotropic conductive layer is sandwiched between the semiconductor element and the substrate, the conductive particles contained in the anisotropic conductive layer can be prevented from moving on the bump electrode. Thereby, since it can suppress that the density of a conductive particle becomes low locally on a bump electrode or becomes high, the density of the conductive particle on a bump electrode can be made uniform.
  • the conductive particles are arranged in the vertical direction (direction from the semiconductor element toward the substrate) between the semiconductor element and the substrate. Can be suppressed. As a result, the conductive particles can be prevented from being deformed by plastic deformation and being crushed by being sandwiched between the semiconductor element and the substrate, so that poor connection between the semiconductor element and the substrate can be prevented. Can be suppressed.
  • the step between the concave portion and the convex portion is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles. It can suppress that the level
  • the convex portion is formed to be deformed by being pressed by the conductive particles.
  • the bump electrode can be further pressed to the conductive particle side from the state where the bump electrode having a large bump height is in contact with the conductive particles.
  • it can suppress that a bump electrode with small bump height stops contacting an electrically-conductive particle, it can further suppress that a connection defect generate
  • the step between the concave portion and the convex portion is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles. Even when the variation is large, it is possible to easily suppress a connection failure between the semiconductor element and the substrate.
  • the plurality of recesses are formed to have a width smaller than the particle size of the conductive particles. If comprised in this way, it can suppress that a conductive particle enters the inside of a recessed part. That is, it is possible to prevent the conductive particles from being electrically connected to the bump electrode protrusions.
  • the plurality of convex portions are formed to have a width smaller than the particle size of the conductive particles. If comprised in this way, it can suppress that a convex part becomes difficult to deform
  • the plurality of concave portions and the plurality of convex portions are formed in a region of 30% or more of the surface electrically connected to the anisotropic conductive layer. If comprised in this way, when an anisotropic conductive layer is inserted
  • the step between the concave portion and the convex portion has a size of 100% or less with respect to the particle size of the conductive particles. If comprised in this way, it can suppress that an electrically-conductive particle enters the inside of a recessed part, and is no longer electrically connected with a convex part.
  • the step between the concave portion and the convex portion has a size of ⁇ 2 ⁇ m or more and 0 ⁇ m or less with respect to the particle size of the conductive particles.
  • the step between the recess and the projection becomes the particle size of the conductive particle. On the other hand, it can be easily suppressed from becoming too small.
  • the conductive particles enter the concave portion and are electrically connected to the convex portion. Elimination can be easily suppressed.
  • the convex portion preferably has a hardness smaller than that of the conductive particles. If comprised in this way, a convex part can be easily formed so that it may deform
  • “the convex portion has a hardness smaller than that of the conductive particles” means that when the convex portions are pressed against the conductive particles, the convex portions are plastically deformed before the conductive particles are plastically deformed.
  • At least the convex portion is formed of Au. If comprised in this way, a convex part can be easily formed so that it may deform
  • a semiconductor element according to a second aspect of the present invention includes a bump electrode having the above configuration. If comprised in this way, the semiconductor element which can suppress that a connection failure generate
  • a semiconductor device includes the semiconductor element having the above structure and a substrate electrically connected to the semiconductor element via an anisotropic conductive layer. If comprised in this way, the semiconductor device which can suppress that a connection defect generate
  • the bump electrode, the semiconductor element, and the semiconductor capable of suppressing the occurrence of connection failure between the semiconductor element and the substrate while suppressing the damage of the semiconductor element.
  • the device can be easily obtained.
  • FIG. 2 is an exploded cross-sectional view illustrating a structure of a semiconductor device including the driving IC according to the embodiment of the present invention illustrated in FIG. 1.
  • FIG. 2 is an enlarged cross-sectional view illustrating a structure of a bump electrode of the driving IC according to the embodiment of the present invention illustrated in FIG. 1.
  • FIG. 2 is an enlarged cross-sectional view illustrating a structure of a bump electrode of the driving IC according to the embodiment of the present invention illustrated in FIG. 1.
  • FIG. 2 is an enlarged cross-sectional view illustrating a connection state between a driving IC and a liquid crystal display panel according to an embodiment of the present invention illustrated in FIG.
  • FIG. 2 is an enlarged cross-sectional view illustrating a connection state between a driving IC and a liquid crystal display panel according to an embodiment of the present invention illustrated in FIG. 1. It is the expanded sectional view which showed the structure of the liquid crystal display panel containing the bump electrode by the 1st modification of this invention. It is the expanded sectional view which showed the structure of the bump electrode by the 2nd modification of this invention. It is the expanded sectional view which showed the structure of the bump electrode by the 3rd modification of this invention. It is sectional drawing which showed the structure of the semiconductor device by a conventional example by which the drive IC was mounted face-down on the display panel via the anisotropic conductive film.
  • FIG. 1 the structure of the liquid crystal display panel containing the bump electrode by the 1st modification of this invention.
  • the expanded sectional view which showed the structure of the bump electrode by the 2nd modification of this invention.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a driving IC and a display panel are normally electrically connected in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
  • the semiconductor device 1 is used in, for example, a liquid crystal display device. 1 and 2, the semiconductor device 1 electrically connects the driving IC 10, the liquid crystal display panel 20 on which the driving IC 10 is mounted face down, and the driving IC 10 and the liquid crystal display panel 20 to each other. And an ACF (anisotropic conductive film) 30 for connection.
  • the driving IC 10 is an example of the “semiconductor element” in the present invention
  • the liquid crystal display panel 20 is an example of the “substrate” in the present invention.
  • the ACF 30 is an example of the “anisotropic conductive layer” in the present invention.
  • the driving IC 10 includes a semiconductor substrate 11 made of silicon or the like, a plurality of wiring portions 12 provided in a predetermined region on the main surface 11a of the semiconductor substrate 11, and a plurality of bump electrodes provided on the plurality of wiring portions 12. 13 and so on.
  • the wiring part 12 is made of, for example, Al.
  • the wiring part 12 may be formed with metals other than Al, such as Cu, for example.
  • the surface of the wiring part 12 is formed in the flat surface.
  • the plurality of bump electrodes 13 are made of, for example, Au.
  • the bump electrode 13 may be formed of a metal other than Au.
  • the bump electrode 13 is formed to have, for example, a bump height H1 of about 15 ⁇ m (about 12 ⁇ m to about 20 ⁇ m) and an area of about 50 ⁇ m ⁇ about 50 ⁇ m.
  • the bump height H1 refers to the height from the interface between the bump electrode 13 and the wiring portion 12 to the tip of a convex portion 13c (described later) of the bump electrode 13.
  • connection surface 13a of the bump electrode 13 (surface electrically connected to the conductive particles 32 described later of the ACF 30) is an uneven surface having a plurality of recesses 13b and a plurality of protrusions 13c. It is formed into a shape.
  • the connection surface 13a is an example of the “surface” in the present invention.
  • the step H2 between the concave portion 13b and the convex portion 13c has a size of about 1.5 ⁇ m or more and 2.5 ⁇ m or less, for example.
  • the plurality of recesses 13 b have a width W ⁇ b> 1 that is smaller than the particle size of conductive particles 32 (see FIG. 5) described later of the ACF 30.
  • the plurality of convex portions 13 c also have a width W ⁇ b> 2 that is smaller than the particle size of the conductive particles 32.
  • the bump electrode 13 is formed so that a line (not shown) connecting the tips of the plurality of convex portions 13 c is substantially parallel to the main surface 11 a of the semiconductor substrate 11.
  • the bump electrode 13 can be formed by, for example, an electrolytic plating method.
  • the plurality of concave portions 13b and convex portions 13c of the bump electrode 13 are controlled by plating conditions such as increasing the plating speed, or by chemically or mechanically surface-treating the connection surface 13a of the bump electrode 13, It can be easily formed.
  • the liquid crystal display panel 20 is provided with a plurality of wiring electrodes 21 at positions corresponding to the plurality of bump electrodes 13 of the driving IC 10.
  • the ACF 30 includes an adhesive layer 31 made of an insulating resin film and a plurality of conductive particles 32 contained in the adhesive layer 31.
  • the conductive particles 32 are formed by coating resin particles serving as a core with a metal layer or metal particles. Further, the conductive particles 32 are arranged at a uniform density between the bump electrodes 13 and the wiring electrodes 21 of the liquid crystal display panel 20.
  • the conductive particles 32 are sandwiched between the bump electrodes 13 of the driving IC 10 and the wiring electrodes 21 of the liquid crystal display panel 20, whereby the driving IC 10 and the liquid crystal display panel 20 are electrically connected to each other. It is connected.
  • the bumps 13 of the driving IC 10 are bump electrodes 13d having a desired bump height
  • the bumps 13 are sandwiched between the driving IC 12 and the liquid crystal display panel 20 and the ACF 30 is sandwiched between them.
  • the tips of the plurality of convex portions 13 c of the electrode 13 d are crushed by the conductive particles 32.
  • the convex portion 13c that is most crushed by the conductive particles 32 is, for example, crushed more than half with respect to the step H2 (see FIG. 3).
  • the bump electrode 13 d is electrically connected to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
  • a bump electrode 13d having a desired bump height and a bump electrode 13e having a bump height smaller than the bump electrode 13d are formed in the driving IC 10.
  • the bump electrode 13d is crushed by the conductive particles 32 at the tip of the convex portion 13c to the same extent as the bump electrode 13d shown in FIG.
  • the tip of the convex portion 13c of the bump electrode 13e is crushed by, for example, half or less of the step H2 (see FIG. 3). That is, the tip of the bump electrode 13e having a bump height smaller than that of the bump electrode 13d is crushed by an amount smaller than that of the bump electrode 13d.
  • the bump electrode 13 e is also electrically connected to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
  • the driving IC 10 when the driving IC 10 is connected to the liquid crystal display panel 20 via the conductive particles 32 (ACF 30), the bump electrodes 13d of the driving IC 10 are connected to the wiring electrodes 21 of the liquid crystal display panel 20 via the conductive particles 32. From the connected (pressed) state, the driving IC 10 is further pressed toward the liquid crystal display panel 20. Thereby, the bump electrode 13 e is also connected (pressed) to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
  • the tip of the convex portion 13 c of the bump electrode 13 is arranged at a predetermined distance from the wiring electrode 21 of the liquid crystal display panel 20, but the tip of the convex portion 13 c of the bump electrode 13 is arranged. May be in direct contact with the wiring electrode 21 of the liquid crystal display panel 20.
  • the tip of the convex portion 13c is crushed by the wiring electrode 21, it is possible to suppress the pressing force from being applied to the circuit of the driving IC 10, and the circuit of the driving IC 10 is damaged. It is possible to suppress this.
  • connection surface 13a of the bump electrode 13 is formed in a concavo-convex shape having a plurality of concave portions 13b and a plurality of convex portions 13c, whereby the driving IC 10 and the liquid crystal display panel 20 use the ACF 30. It is possible to prevent the conductive particles 32 of the ACF 30 from moving in the lateral direction (A direction) (direction parallel to the main surface 11a of the semiconductor substrate 11) on the bump electrode 13 when sandwiching. Thereby, since it can suppress that the density of the electroconductive particle 32 becomes low locally between the bump electrode 13 and the wiring electrode 21, it can suppress, The density of the electroconductive particle 32 on the bump electrode 13 Can be made uniform.
  • the conductive particles 32 can be prevented from moving outward from between the bump electrodes 13 and the wiring electrodes 21 of the liquid crystal display panel 20, the conductive particles 32 are between the bump electrodes 13 and the wiring electrodes 21. It can suppress that it does not exist. As a result, it is possible to prevent the driving IC 10 and the liquid crystal display panel 20 from being electrically connected by the conductive particles 32, so that a connection failure occurs between the driving IC 10 and the liquid crystal display panel 20. Can be suppressed. Moreover, since it can suppress that the electrically-conductive particle 32 does not exist between the bump electrode 13 and the wiring electrode 21, it suppresses that the bump electrode 13 contacts the wiring electrode 21 of the liquid crystal display panel 20 directly. Can do. Thereby, since it can suppress that pressing force is applied to the drive IC 10, it is possible to further suppress the circuit of the drive IC 10 from being damaged.
  • the density of the conductive particles 32 is locally increased between the bump electrode 13 and the wiring electrode 21, the vertical direction between the conductive particle 32 bump electrode 13 and the wiring electrode 21 can be prevented. Arrangement in the (B direction) (direction perpendicular to the A direction) can be suppressed. As a result, the conductive particles 32 can be prevented from being plastically deformed and crushed by being sandwiched between the bump electrode 13 and the wiring electrode 21, so that the drive IC 10 and the liquid crystal display panel 20 can be suppressed. The occurrence of poor connection can be further suppressed.
  • the step H2 between the concave portion 13b and the convex portion 13c is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles 32. Can be suppressed from becoming too small with respect to the particle size of the conductive particles 32. Thereby, it can suppress effectively that the electrically-conductive particle 32 moves on the bump electrode 13.
  • the convex portion 13 c is formed so as to be deformed by being pressed by the conductive particles 32.
  • the bump electrode 13d driving IC 10
  • the bump electrode 13d driving IC 10
  • the bump electrode 13e driving IC 10
  • the liquid crystal display panel 20 the convex portion 13 c is formed so as to be deformed by being pressed by the conductive particles 32.
  • the step H2 between the concave portion 13b and the convex portion 13c is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles 32. Even when the height variation is large, it is possible to easily suppress a connection failure between the driving IC 10 and the liquid crystal display panel 20.
  • the plurality of recesses 13b are formed to have a width W1 smaller than the particle diameter of the conductive particles 32, thereby suppressing the conductive particles 32 from entering the recesses 13b. Can do. That is, it is possible to prevent the conductive particles 32 from being electrically connected to the convex portion 13 c of the bump electrode 13.
  • the convex portion 13c by forming the plurality of convex portions 13c to have a width W2 smaller than the particle size of the conductive particles 32, it is possible to suppress the convex portions 13c from being easily deformed. Therefore, the convex portion 13 c can be easily formed so as to be deformed by being pressed by the conductive particles 32.
  • the ACF 30 when the ACF 30 is sandwiched between the driving IC 10 and the liquid crystal display panel 20 by forming the plurality of concave portions 13b and the plurality of convex portions 13c in substantially the entire area of the connection surface 13a.
  • the movement of the conductive particles 32 on the bump electrode 13 can be effectively suppressed.
  • the conductive particles 32 can be further suppressed from moving outward from between the bump electrode 13 and the wiring electrode 21, and the density of the conductive particles 32 between the bump electrode 13 and the wiring electrode 21 can be further increased. It can be made uniform.
  • the step H2 between the concave portion 13b and the convex portion 13c is set to 100% or less with respect to the particle size of the conductive particles 32, so that the conductive particles 32 become the concave portions 13b. Can be prevented from entering the interior of the lens and being not electrically connected to the convex portion 13c.
  • the bump electrode 13 is formed of Au, so that the convex portion 13 c can be easily formed so as to be deformed by being pressed by the conductive particles 32. .
  • the bump electrode 122 may be provided on the liquid crystal display panel (substrate) 120.
  • a driving IC is used as a semiconductor element and a liquid crystal display panel is used as a substrate
  • the present invention is not limited thereto, and a semiconductor element other than the driving IC is used as a semiconductor element.
  • a substrate other than the liquid crystal display panel may be used as the substrate.
  • ACF anisotropic conductive layer
  • ACP anisotropic conductive paste
  • step difference between a recessed part and a convex part was shown. It is more effective to further increase the particle size of the conductive particles. That is, if the step between the concave portion and the convex portion is formed so as to be larger than 50% of the particle size of the conductive particles or have a size of 70% or more, the bump height between the plurality of bump electrodes is increased. Even when the variation is larger, it is possible to easily suppress a connection failure between the driving IC and the liquid crystal display panel.
  • the present invention is not limited thereto, and the substantially entire connection surface may not be formed in a concavo-convex shape.
  • the bump electrode 13 and the liquid crystal display panel 20 can be formed by forming a region of 30% or more of the connection surface 13 a in a concave-convex shape. It was confirmed that the wiring electrode 21 was electrically connected well.
  • the bump electrode is shown as an example in which the line connecting the tips of the plurality of protrusions is formed substantially parallel to the main surface of the semiconductor substrate.
  • the present invention is not limited to this.
  • the bump electrode 213 is formed so that a line (not shown) connecting the tips of the plurality of convex portions 213c has a convex shape. Also good. Also in this case, it is possible to prevent the conductive particles from moving on the bump electrode 213 by the plurality of convex portions 213c.
  • the gaps 313 b of the bump electrodes 313 and the gaps 313 c are substantially parallel to the main surface 11 a of the semiconductor substrate 11. It may be formed. Also in this case, the width W11 of the concave portion 313b and the width W12 of the convex portion 313c are preferably smaller than the particle diameter of the conductive particles.
  • SYMBOLS 1 Semiconductor device 10 Drive IC (semiconductor element) 13, 13d, 13e, 122, 213, 313 Bump electrode 13a Connection surface (surface) 13b, 313b Concave part 13c, 213c, 313c Convex part 20, 120 Liquid crystal display panel (substrate) 30 ACF (anisotropic conductive layer) 32 Conductive particle H2 Level difference W1, W11 width W2, W12 width

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

Provided is a bump electrode that can minimize connection problems between a semiconductor element and a substrate while also minimizing damage to the semiconductor element. In the provided bump electrode (13), a connection surface (13a) is formed so as to include a bumpy pattern that has a plurality of indentations (13b) and a plurality of protrusions (13c). The height difference (H2) between the indentations and the protrusions is at least 45% as big as the diameter of conductive particles (32) contained in an ACF (30). The protrusions are provided in order to electrically connect to the conductive particles, and are formed so as to deform as a result of pressure from the conductive particles.

Description

バンプ電極、半導体素子および半導体装置Bump electrode, semiconductor element, and semiconductor device
　この発明は、バンプ電極、半導体素子および半導体装置に関し、特に、異方性導電層を介して電気的に接続されるバンプ電極、半導体素子および半導体装置に関する。 The present invention relates to a bump electrode, a semiconductor element, and a semiconductor device, and more particularly to a bump electrode, a semiconductor element, and a semiconductor device that are electrically connected via an anisotropic conductive layer.
　近年、携帯電話などに用いられる表示装置として、液晶表示装置や有機ＥＬ（Ｅｌｅｃｔｒｏ　Ｌｕｍｉｎｅｓｃｅｎｃｅ）表示装置などの薄型の表示装置が広く用いられている。これらの表示装置は、表示パネル（基板）と、表示パネルに電気的に接続される駆動用ＩＣ（Ｉｎｔｅｇｒａｔｅｄ　Ｃｉｒｃｕｉｔ）とを含む半導体装置を備えている。 In recent years, thin display devices such as liquid crystal display devices and organic EL (Electro Luminescence) display devices have been widely used as display devices used for mobile phones and the like. These display devices include a semiconductor device including a display panel (substrate) and a driving IC (Integrated Circuit) electrically connected to the display panel.
　このような半導体装置では、バンプ電極が形成された駆動用ＩＣ（半導体素子）を、異方性導電フィルム（異方性導電層）を介して、表示パネルに形成された配線電極にフェイスダウン実装するのが一般的である。 In such a semiconductor device, a driving IC (semiconductor element) on which bump electrodes are formed is mounted face-down on wiring electrodes formed on a display panel via an anisotropic conductive film (anisotropic conductive layer). It is common to do.
　異方性導電フィルムは、絶縁性の接着層中に導電粒子を分散させたものである。異方性導電フィルム中の導電粒子が、バンプ電極と配線電極とに接触されることによって、駆動用ＩＣと表示パネルとが電気的に接続される。 An anisotropic conductive film is obtained by dispersing conductive particles in an insulating adhesive layer. When the conductive particles in the anisotropic conductive film are in contact with the bump electrode and the wiring electrode, the driving IC and the display panel are electrically connected.
　図１０は、駆動用ＩＣ５１０が異方性導電フィルム５３０を介して表示パネル５２０にフェイスダウン実装された従来の一例による半導体装置５０１の構造を示した断面図である。図１１は、図１０に示した従来の一例による半導体装置５０１において、駆動用ＩＣ５１０と表示パネル５２０とが正常に電気的に接続された状態を示した拡大断面図である。 FIG. 10 is a cross-sectional view showing the structure of a conventional semiconductor device 501 in which the driving IC 510 is mounted face-down on the display panel 520 via the anisotropic conductive film 530. FIG. 11 is an enlarged cross-sectional view showing a state in which the driving IC 510 and the display panel 520 are normally electrically connected in the semiconductor device 501 according to the conventional example shown in FIG.
　従来の一例による半導体装置５０１は、図１０に示すように、駆動用ＩＣ５１０と、駆動用ＩＣ５１０がフェイスダウン実装された表示パネル５２０と、駆動用ＩＣ５１０および表示パネル５２０を互いに電気的に接続するための異方性導電フィルム５３０とを備えている。 As shown in FIG. 10, a semiconductor device 501 according to a conventional example electrically connects a driving IC 510, a display panel 520 on which the driving IC 510 is mounted face down, and the driving IC 510 and the display panel 520 to each other. The anisotropic conductive film 530 is provided.
　図１１に示すように、駆動用ＩＣ５１０の半導体基板５１１の主表面５１１ａ上には、所定のバンプ高さを有する複数のバンプ電極５１２が設けられている。また、バンプ電極５１２の接続面５１２ａ（異方性導電フィルム５３０の後述する導電粒子５３２と接触する面）は、平坦面に形成されている。なお、本明細書中において、平坦面とは、完全に平坦な面だけでなく、例えば０．５μｍ以下の段差を有する凸部や凹部が形成された面も含む。 As shown in FIG. 11, a plurality of bump electrodes 512 having a predetermined bump height are provided on the main surface 511a of the semiconductor substrate 511 of the driving IC 510. Further, the connection surface 512a of the bump electrode 512 (the surface of the anisotropic conductive film 530 that comes into contact with conductive particles 532 described later) is formed on a flat surface. In the present specification, the flat surface includes not only a completely flat surface but also a surface on which convex portions and concave portions having a step of 0.5 μm or less are formed.
　表示パネル５２０には、駆動用ＩＣ５１０のバンプ電極５１２に対応する位置に、複数の配線電極５２１が設けられている。 The display panel 520 is provided with a plurality of wiring electrodes 521 at positions corresponding to the bump electrodes 512 of the driving IC 510.
　異方性導電フィルム５３０は、絶縁性の接着層５３１と、接着層５３１内に分散された複数の導電粒子５３２とによって構成されている。そして、この導電粒子５３２が駆動用ＩＣ５１０のバンプ電極５１２と表示パネル５２０の配線電極５２１とに接触されることによって、駆動用ＩＣ５１０と表示パネル５２０とが互いに電気的に接続されている。 The anisotropic conductive film 530 includes an insulating adhesive layer 531 and a plurality of conductive particles 532 dispersed in the adhesive layer 531. The conductive particles 532 are brought into contact with the bump electrodes 512 of the driving IC 510 and the wiring electrodes 521 of the display panel 520, whereby the driving IC 510 and the display panel 520 are electrically connected to each other.
　また、従来、バンプ電極が形成された半導体素子を、異方性導電層を介して、基板にフェイスダウン実装した構造が知られている（例えば、特許文献１参照）。 Conventionally, a structure in which a semiconductor element on which a bump electrode is formed is mounted face-down on a substrate via an anisotropic conductive layer is known (for example, see Patent Document 1).
　上記特許文献１には、ＬＣＤドライバ（半導体素子）と、ＬＣＤドライバがフェイスダウン実装された基板と、ＬＣＤドライバおよび基板を互いに電気的に接続するための異方性導電膜（異方性導電層）とを備えた構造が開示されている。 Patent Document 1 discloses an LCD driver (semiconductor element), a substrate on which the LCD driver is mounted face-down, and an anisotropic conductive film (an anisotropic conductive layer) for electrically connecting the LCD driver and the substrate to each other. ) Is disclosed.
　ＬＣＤドライバの主表面上には、複数のバンプ電極が設けられている。このバンプ電極の基板側の表面には、異方性導電膜の導電性粒子（導電粒子）と接触する平坦面からなる平坦部と、平坦部の周囲に設けられたストッパとが設けられている。このストッパは、平坦部から基板側に突出するように形成されている。 A plurality of bump electrodes are provided on the main surface of the LCD driver. A surface of the bump electrode on the substrate side is provided with a flat portion made of a flat surface in contact with the conductive particles (conductive particles) of the anisotropic conductive film, and a stopper provided around the flat portion. . The stopper is formed so as to protrude from the flat portion to the substrate side.
　また、基板には、ＬＣＤドライバのバンプ電極に対応する位置に、複数の電極が設けられている。 Also, the substrate is provided with a plurality of electrodes at positions corresponding to the bump electrodes of the LCD driver.
特開２００８－４７９４３号公報JP 2008-47943 A
　図１０に示した従来の一例による半導体装置５０１では、駆動用ＩＣ５１０の複数のバンプ電極５１２が、製造ばらつきにより、全て同じバンプ高さにならない場合がある。例えば、図１２に示すように、所定のバンプ高さを有するバンプ電極５１２ｂと、バンプ電極５１２ｂよりも小さいバンプ高さを有するバンプ電極５１２ｃとが形成された場合、バンプ電極５１２ｂは、導電粒子５３２を介して配線電極５２１に電気的に接続される一方、バンプ電極５１２ｃは、配線電極５２１に電気的に接続されない。すなわち、駆動用ＩＣ５１０と表示パネル５２０との間で接続不良が発生するという問題点がある。 In the conventional semiconductor device 501 shown in FIG. 10, the plurality of bump electrodes 512 of the driving IC 510 may not all have the same bump height due to manufacturing variations. For example, as shown in FIG. 12, when a bump electrode 512b having a predetermined bump height and a bump electrode 512c having a bump height smaller than the bump electrode 512b are formed, the bump electrode 512b is formed of conductive particles 532. On the other hand, the bump electrode 512c is not electrically connected to the wiring electrode 521. That is, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520.
　また、駆動用ＩＣ５１０と表示パネル５２０とにより異方性導電フィルム５３０を挟み込む際に、導電粒子５３２は、異方性導電フィルム５３０中を横方向（Ａ方向）（半導体基板５１１の主表面５１１ａに平行な方向）に移動する。 Further, when the anisotropic conductive film 530 is sandwiched between the driving IC 510 and the display panel 520, the conductive particles 532 pass through the anisotropic conductive film 530 in the horizontal direction (A direction) (on the main surface 511 a of the semiconductor substrate 511. (Parallel direction).
　例えば、導電粒子５３２が移動することにより、バンプ電極５１２と配線電極５２１との間の導電粒子５３２の密度が低くなる場合、図１３に示すように、バンプ電極５１２と配線電極５２１との間で導電粒子５３２が存在しなくなる場合がある。この場合、駆動用ＩＣ５１０と表示パネル５２０との間で接続不良が発生するという問題点がある。また、バンプ電極５１２と配線電極５２１との間で導電粒子５３２が存在しなくなった場合、バンプ電極５１２が配線電極５２１に直接接触し、駆動用ＩＣ５１０に押圧力が加わりやすくなり、駆動用ＩＣ５１０の回路が損傷する場合があるという問題点もある。 For example, when the density of the conductive particles 532 between the bump electrode 512 and the wiring electrode 521 decreases due to the movement of the conductive particles 532, as shown in FIG. 13, between the bump electrode 512 and the wiring electrode 521, The conductive particles 532 may not exist. In this case, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520. Further, when the conductive particles 532 no longer exist between the bump electrode 512 and the wiring electrode 521, the bump electrode 512 directly contacts the wiring electrode 521, and a pressing force is easily applied to the driving IC 510. There is also a problem that the circuit may be damaged.
　さらに、図１４に示すように、バンプ電極５１２の接続面５１２全体が凸形状に形成されている場合、導電粒子５３２がバンプ電極５１２と配線電極５２１との間から外側に、より移動しやすくなるので、駆動用ＩＣ５１０と表示パネル５２０との間で接続不良がより発生しやすくなる。 Furthermore, as shown in FIG. 14, when the entire connection surface 512 of the bump electrode 512 is formed in a convex shape, the conductive particles 532 are more easily moved from between the bump electrode 512 and the wiring electrode 521 to the outside. Therefore, a connection failure between the driving IC 510 and the display panel 520 is more likely to occur.
　また、導電粒子５３２が移動することにより、バンプ電極５１２と配線電極５２１との間の導電粒子５３２の密度が高くなった場合、図１５に示すように、縦方向（Ｂ方向）（Ａ方向と直交する方向）に並んだ導電粒子５３２が、バンプ電極５１２と配線電極５２１とにより挟まれることにより、塑性変形して潰れる場合がある。この場合にも、駆動用ＩＣ５１０と表示パネル５２０との間で接続不良が発生するという問題点がある。 Further, when the density of the conductive particles 532 between the bump electrode 512 and the wiring electrode 521 increases due to the movement of the conductive particles 532, as shown in FIG. 15, the vertical direction (B direction) (the A direction and When the conductive particles 532 arranged in the (perpendicular direction) are sandwiched between the bump electrode 512 and the wiring electrode 521, the conductive particles 532 may be plastically deformed and crushed. Even in this case, there is a problem that a connection failure occurs between the driving IC 510 and the display panel 520.
　なお、バンプ電極５１２の接続面５１２ａが、半導体基板５１１の主表面５１１ａに対して傾斜して形成された場合、接続面５１２ａの傾斜方向によって、バンプ電極５１２と配線電極５２１との間の導電粒子５３２の密度が低くなったり高くなったりしやすくなる。このため、駆動用ＩＣ５１０と表示パネル５２０との間で接続不良が発生しやすくなる。 When the connection surface 512a of the bump electrode 512 is formed to be inclined with respect to the main surface 511a of the semiconductor substrate 511, the conductive particles between the bump electrode 512 and the wiring electrode 521 depend on the inclination direction of the connection surface 512a. The density of 532 tends to decrease or increase. For this reason, a connection failure is likely to occur between the driving IC 510 and the display panel 520.
　上記特許文献１では、バンプ電極の基板側の表面に、平坦部の周囲を囲うとともに平坦部から基板側に突出するストッパを設けているので、ＬＣＤドライバと基板とにより異方性導電膜を挟み込む際に、導電性粒子がバンプ電極と基板の電極との間から外側に移動しようとしても、導電性粒子がバンプ電極のストッパに当接する。このため、導電性粒子がストッパの外側に移動するのを抑制することが可能であり、バンプ電極と基板の電極との間で導電性粒子が存在しなくなるのを抑制することが可能である。 In the above-mentioned Patent Document 1, since the stopper is provided on the surface of the bump electrode on the substrate side so as to surround the flat portion and project from the flat portion to the substrate side, the anisotropic conductive film is sandwiched between the LCD driver and the substrate. At this time, even if the conductive particles try to move outward from between the bump electrode and the electrode of the substrate, the conductive particles come into contact with the bump electrode stopper. For this reason, it is possible to suppress the conductive particles from moving to the outside of the stopper, and it is possible to suppress the absence of the conductive particles between the bump electrode and the substrate electrode.
　しかしながら、上記特許文献１では、バンプ電極と基板の電極との間において、バンプ電極のストッパ近傍の導電性粒子の密度が高くなりやすい。このため、図１５に示した従来の一例による半導体装置５０１と同様、導電性粒子が縦方向（バンプ電極から基板の電極に向かう方向）に並びやすく、導電性粒子がバンプ電極と基板の電極とにより挟まれることにより塑性変形して潰れる場合がある。したがって、ＬＣＤドライバと基板との間で接続不良が発生するという問題点がある。 However, in Patent Document 1, the density of the conductive particles in the vicinity of the bump electrode stopper tends to be high between the bump electrode and the substrate electrode. For this reason, like the semiconductor device 501 according to the conventional example shown in FIG. 15, the conductive particles are easily arranged in the vertical direction (direction from the bump electrode to the electrode of the substrate), and the conductive particles are arranged between the bump electrode and the substrate electrode. May be crushed due to plastic deformation. Therefore, there is a problem that a connection failure occurs between the LCD driver and the substrate.
　また、上記特許文献１では、ＬＣＤドライバの複数のバンプ電極が、製造ばらつきにより、全て同じバンプ高さにならない場合、図１０に示した従来の一例による半導体装置５０１と同様、基板の電極に電気的に接続されないバンプ電極が発生する。すなわち、ＬＣＤドライバと基板との間で接続不良が発生するという問題点がある。 Further, in Patent Document 1, when the bump electrodes of the LCD driver do not all have the same bump height due to manufacturing variations, the electrodes on the substrate are electrically connected to the electrodes of the substrate as in the conventional semiconductor device 501 shown in FIG. Bump electrodes that are not connected to each other are generated. That is, there is a problem that a connection failure occurs between the LCD driver and the substrate.
　この発明は、上記のような課題を解決するためになされたものであり、この発明の目的は、半導体素子が損傷するのを抑制しながら、半導体素子と基板との間で接続不良が発生するのを抑制することが可能なバンプ電極、半導体素子および半導体装置を提供することである。 The present invention has been made to solve the above-described problems, and an object of the present invention is to cause poor connection between a semiconductor element and a substrate while suppressing damage to the semiconductor element. It is an object to provide a bump electrode, a semiconductor element, and a semiconductor device capable of suppressing the above.
　上記目的を達成するために、この発明の第１の局面によるバンプ電極は、異方性導電層を介して互いに電気的に接続される半導体素子および基板の少なくとも一方に含まれるバンプ電極であって、異方性導電層に電気的に接続される表面は、複数の凹部および複数の凸部を有する凹凸形状を含むように形成されており、凹部と凸部との段差は、異方性導電層に含有される導電粒子の粒径に対して４５％以上の大きさを有し、凸部は、導電粒子に電気的に接続するために設けられているとともに、導電粒子に押圧されることにより変形するように形成されている。 To achieve the above object, a bump electrode according to a first aspect of the present invention is a bump electrode included in at least one of a semiconductor element and a substrate that are electrically connected to each other through an anisotropic conductive layer. The surface electrically connected to the anisotropic conductive layer is formed to include an uneven shape having a plurality of recesses and a plurality of protrusions, and the step between the recesses and the protrusions is anisotropically conductive. It has a size of 45% or more with respect to the particle size of the conductive particles contained in the layer, and the convex portion is provided to be electrically connected to the conductive particles and pressed by the conductive particles. It is formed so as to be deformed by.
　この第１の局面によるバンプ電極では、上記のように、異方性導電層に電気的に接続される表面を、複数の凹部および複数の凸部を有する凹凸形状を含むように形成することによって、半導体素子と基板とにより異方性導電層を挟み込む際に、異方性導電層に含有される導電粒子がバンプ電極上を移動するのを抑制することができる。これにより、バンプ電極上において、局所的に導電粒子の密度が低くなったり高くなったりするのを抑制することができるので、バンプ電極上の導電粒子の密度を均一にすることができる。 In the bump electrode according to the first aspect, as described above, the surface electrically connected to the anisotropic conductive layer is formed so as to include a concavo-convex shape having a plurality of concave portions and a plurality of convex portions. When the anisotropic conductive layer is sandwiched between the semiconductor element and the substrate, the conductive particles contained in the anisotropic conductive layer can be prevented from moving on the bump electrode. Thereby, since it can suppress that the density of a conductive particle becomes low locally on a bump electrode or becomes high, the density of the conductive particle on a bump electrode can be made uniform.
　すなわち、導電粒子がバンプ電極上から外側に移動するのを抑制することができるので、バンプ電極上で導電粒子が存在しなくなるのを抑制することができる。これにより、半導体素子と基板とが導電粒子により電気的に接続されなくなるのを抑制することができるので、半導体素子と基板との間で接続不良が発生するのを抑制することができる。また、バンプ電極上で導電粒子が存在しなくなるのを抑制することができるので、バンプ電極が半導体素子および基板の他方の電極に直接接触するのを抑制することができる。これにより、半導体素子の回路が損傷するのをより抑制することができる。 That is, since it can suppress that a conductive particle moves outside from on a bump electrode, it can suppress that a conductive particle does not exist on a bump electrode. Thereby, since it can suppress that a semiconductor element and a board | substrate are no longer electrically connected with an electroconductive particle, it can suppress that a connection defect generate | occur | produces between a semiconductor element and a board | substrate. Moreover, since it can suppress that electroconductive particle does not exist on a bump electrode, it can suppress that a bump electrode contacts the other electrode of a semiconductor element and a board | substrate directly. Thereby, it can suppress more that the circuit of a semiconductor element is damaged.
　また、バンプ電極上において、局所的に導電粒子の密度が高くなるのを抑制することができるので、導電粒子が半導体素子と基板との間で縦方向（半導体素子から基板に向かう方向）に並ぶのを抑制することができる。これにより、導電粒子が、半導体素子と基板との間で挟まれることにより、塑性変形して潰れるのを抑制することができるので、半導体素子と基板との間で接続不良が発生するのをより抑制することができる。 Moreover, since it is possible to suppress the local increase in the density of the conductive particles on the bump electrode, the conductive particles are arranged in the vertical direction (direction from the semiconductor element toward the substrate) between the semiconductor element and the substrate. Can be suppressed. As a result, the conductive particles can be prevented from being deformed by plastic deformation and being crushed by being sandwiched between the semiconductor element and the substrate, so that poor connection between the semiconductor element and the substrate can be prevented. Can be suppressed.
　また、第１の局面によるバンプ電極では、上記のように、凹部と凸部との段差を、導電粒子の粒径に対して４５％以上の大きさを有するように形成することによって、凹部と凸部との段差が導電粒子の粒径に対して小さくなりすぎるのを抑制することができる。これにより、導電粒子がバンプ電極上を移動するのを、効果的に抑制することができる。 Further, in the bump electrode according to the first aspect, as described above, the step between the concave portion and the convex portion is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles. It can suppress that the level | step difference with a convex part becomes small with respect to the particle size of electroconductive particle. Thereby, it can suppress effectively that a conductive particle moves on a bump electrode.
　また、第１の局面によるバンプ電極では、上記のように、凸部を、導電粒子に押圧されることにより変形するように形成する。これにより、複数のバンプ電極間でバンプ高さにばらつきが発生した場合に、バンプ高さの大きいバンプ電極が導電粒子に接触した状態から、さらにバンプ電極を導電粒子側に押圧させることができる。これにより、バンプ高さの小さいバンプ電極が導電粒子に接触しなくなるのを抑制することができるので、半導体素子と基板との間で接続不良が発生するのをさらに抑制することができる。第１の局面によるバンプ電極では、凹部と凸部との段差を、導電粒子の粒径に対して４５％以上の大きさを有するように形成するので、複数のバンプ電極間のバンプ高さのばらつきが大きい場合にも、半導体素子と基板との間で接続不良が発生するのを容易に抑制することができる。 Further, in the bump electrode according to the first aspect, as described above, the convex portion is formed to be deformed by being pressed by the conductive particles. Thereby, when variation in bump height occurs between a plurality of bump electrodes, the bump electrode can be further pressed to the conductive particle side from the state where the bump electrode having a large bump height is in contact with the conductive particles. Thereby, since it can suppress that a bump electrode with small bump height stops contacting an electrically-conductive particle, it can further suppress that a connection defect generate | occur | produces between a semiconductor element and a board | substrate. In the bump electrode according to the first aspect, the step between the concave portion and the convex portion is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles. Even when the variation is large, it is possible to easily suppress a connection failure between the semiconductor element and the substrate.
　上記第１の局面によるバンプ電極において、好ましくは、複数の凹部は、導電粒子の粒径よりも小さい幅に形成されている。このように構成すれば、導電粒子が凹部の内部に入り込むのを抑制することができる。すなわち、導電粒子がバンプ電極の凸部と電気的に接続しなくなるのを抑制することができる。 In the bump electrode according to the first aspect, preferably, the plurality of recesses are formed to have a width smaller than the particle size of the conductive particles. If comprised in this way, it can suppress that a conductive particle enters the inside of a recessed part. That is, it is possible to prevent the conductive particles from being electrically connected to the bump electrode protrusions.
　上記第１の局面によるバンプ電極において、好ましくは、複数の凸部は、導電粒子の粒径よりも小さい幅に形成されている。このように構成すれば、凸部が変形しにくくなるのを抑制することができるので、凸部を、導電粒子に押圧されることにより変形するように、容易に形成することができる。 In the bump electrode according to the first aspect, preferably, the plurality of convex portions are formed to have a width smaller than the particle size of the conductive particles. If comprised in this way, it can suppress that a convex part becomes difficult to deform | transform, Therefore A convex part can be easily formed so that it may deform | transform by being pressed by electroconductive particle.
　上記第１の局面によるバンプ電極において、好ましくは、複数の凹部および複数の凸部は、異方性導電層に電気的に接続される表面の３０％以上の領域に形成されている。このように構成すれば、半導体素子と基板とにより異方性導電層を挟み込む際に、導電粒子がバンプ電極上を移動するのを効果的に抑制することができる。これにより、導電粒子がバンプ電極上から外側に移動するのをより抑制することができるとともに、バンプ電極上の導電粒子の密度をより均一にすることができる。 In the bump electrode according to the first aspect, preferably, the plurality of concave portions and the plurality of convex portions are formed in a region of 30% or more of the surface electrically connected to the anisotropic conductive layer. If comprised in this way, when an anisotropic conductive layer is inserted | pinched with a semiconductor element and a board | substrate, it can suppress effectively that a conductive particle moves on a bump electrode. Thereby, while being able to suppress more that a conductive particle moves outside from a bump electrode, the density of the conductive particle on a bump electrode can be made more uniform.
　上記第１の局面によるバンプ電極において、好ましくは、凹部と凸部との段差は、導電粒子の粒径に対して１００％以下の大きさを有する。このように構成すれば、導電粒子が凹部の内部に入り込んで凸部と電気的に接続しなくなるのを抑制することができる。 In the bump electrode according to the first aspect, preferably, the step between the concave portion and the convex portion has a size of 100% or less with respect to the particle size of the conductive particles. If comprised in this way, it can suppress that an electrically-conductive particle enters the inside of a recessed part, and is no longer electrically connected with a convex part.
　上記第１の局面によるバンプ電極において、好ましくは、凹部と凸部との段差は、導電粒子の粒径に対して－２μｍ以上０μｍ以下の大きさを有する。このように、凹部と凸部との段差を、導電粒子の粒径に対して－２μｍ以上の大きさを有するように形成することによって、凹部と凸部との段差が導電粒子の粒径に対して小さくなりすぎるのを、容易に抑制することができる。また、凹部と凸部との段差を、導電粒子の粒径に対して０μｍ以下の大きさを有するように形成することによって、導電粒子が凹部の内部に入り込んで凸部と電気的に接続しなくなるのを、容易に抑制することができる。 In the bump electrode according to the first aspect, preferably, the step between the concave portion and the convex portion has a size of −2 μm or more and 0 μm or less with respect to the particle size of the conductive particles. Thus, by forming the step between the recess and the projection so as to have a size of −2 μm or more with respect to the particle size of the conductive particle, the step between the recess and the projection becomes the particle size of the conductive particle. On the other hand, it can be easily suppressed from becoming too small. Further, by forming a step between the concave portion and the convex portion so as to have a size of 0 μm or less with respect to the particle size of the conductive particles, the conductive particles enter the concave portion and are electrically connected to the convex portion. Elimination can be easily suppressed.
　上記第１の局面によるバンプ電極において、好ましくは、凸部は、導電粒子よりも小さい硬度を有する。このように構成すれば、凸部を、導電粒子に押圧されることにより変形するように、容易に形成することができる。なお、本明細書中において、「凸部が導電粒子よりも小さい硬度を有する」とは、凸部を導電粒子に押圧した場合に、導電粒子が塑性変形する前に凸部が塑性変形することをいう。 In the bump electrode according to the first aspect, the convex portion preferably has a hardness smaller than that of the conductive particles. If comprised in this way, a convex part can be easily formed so that it may deform | transform by being pressed by the electroconductive particle. In the present specification, “the convex portion has a hardness smaller than that of the conductive particles” means that when the convex portions are pressed against the conductive particles, the convex portions are plastically deformed before the conductive particles are plastically deformed. Say.
　上記第１の局面によるバンプ電極において、好ましくは、少なくとも凸部は、Ａｕにより形成されている。このように構成すれば、凸部を、導電粒子に押圧されることにより変形するように、容易に形成することができる。 In the bump electrode according to the first aspect, preferably, at least the convex portion is formed of Au. If comprised in this way, a convex part can be easily formed so that it may deform | transform by being pressed by the electroconductive particle.
　この発明の第２の局面による半導体素子は、上記の構成のバンプ電極を備える。このように構成すれば、半導体素子が損傷するのを抑制しながら、半導体素子と基板との間で接続不良が発生するのを抑制することが可能な半導体素子を得ることができる。 A semiconductor element according to a second aspect of the present invention includes a bump electrode having the above configuration. If comprised in this way, the semiconductor element which can suppress that a connection failure generate | occur | produces between a semiconductor element and a board | substrate can be obtained, suppressing damage to a semiconductor element.
　この発明の第３の局面による半導体装置は、上記の構成の半導体素子と、半導体素子に異方性導電層を介して電気的に接続される基板とを備える。このように構成すれば、半導体素子が損傷するのを抑制しながら、半導体素子と基板との間で接続不良が発生するのを抑制することが可能な半導体装置を得ることができる。 A semiconductor device according to a third aspect of the present invention includes the semiconductor element having the above structure and a substrate electrically connected to the semiconductor element via an anisotropic conductive layer. If comprised in this way, the semiconductor device which can suppress that a connection defect generate | occur | produces between a semiconductor element and a board | substrate can be obtained, suppressing damage to a semiconductor element.
　以上のように、本発明によれば、半導体素子が損傷するのを抑制しながら、半導体素子と基板との間で接続不良が発生するのを抑制することが可能なバンプ電極、半導体素子および半導体装置を容易に得ることができる。 As described above, according to the present invention, the bump electrode, the semiconductor element, and the semiconductor capable of suppressing the occurrence of connection failure between the semiconductor element and the substrate while suppressing the damage of the semiconductor element. The device can be easily obtained.
本発明の一実施形態による駆動用ＩＣを備えた半導体装置の構造を示した断面図である。It is sectional drawing which showed the structure of the semiconductor device provided with the drive IC by one Embodiment of this invention. 図１に示した本発明の一実施形態による駆動用ＩＣを備えた半導体装置の構造を示した分解断面図である。FIG. 2 is an exploded cross-sectional view illustrating a structure of a semiconductor device including the driving IC according to the embodiment of the present invention illustrated in FIG. 1. 図１に示した本発明の一実施形態による駆動用ＩＣのバンプ電極の構造を示した拡大断面図である。FIG. 2 is an enlarged cross-sectional view illustrating a structure of a bump electrode of the driving IC according to the embodiment of the present invention illustrated in FIG. 1. 図１に示した本発明の一実施形態による駆動用ＩＣのバンプ電極の構造を示した拡大断面図である。FIG. 2 is an enlarged cross-sectional view illustrating a structure of a bump electrode of the driving IC according to the embodiment of the present invention illustrated in FIG. 1. 図１に示した本発明の一実施形態による駆動用ＩＣと液晶表示パネルとの接続状態を示した拡大断面図である。FIG. 2 is an enlarged cross-sectional view illustrating a connection state between a driving IC and a liquid crystal display panel according to an embodiment of the present invention illustrated in FIG. 1. 図１に示した本発明の一実施形態による駆動用ＩＣと液晶表示パネルとの接続状態を示した拡大断面図である。FIG. 2 is an enlarged cross-sectional view illustrating a connection state between a driving IC and a liquid crystal display panel according to an embodiment of the present invention illustrated in FIG. 1. 本発明の第１変形例によるバンプ電極を含む液晶表示パネルの構造を示した拡大断面図である。It is the expanded sectional view which showed the structure of the liquid crystal display panel containing the bump electrode by the 1st modification of this invention. 本発明の第２変形例によるバンプ電極の構造を示した拡大断面図である。It is the expanded sectional view which showed the structure of the bump electrode by the 2nd modification of this invention. 本発明の第３変形例によるバンプ電極の構造を示した拡大断面図である。It is the expanded sectional view which showed the structure of the bump electrode by the 3rd modification of this invention. 駆動用ＩＣが異方性導電フィルムを介して表示パネルにフェイスダウン実装された従来の一例による半導体装置の構造を示した断面図である。It is sectional drawing which showed the structure of the semiconductor device by a conventional example by which the drive IC was mounted face-down on the display panel via the anisotropic conductive film. 図１０に示した従来の一例による半導体装置において、駆動用ＩＣと表示パネルとが正常に電気的に接続された状態を示した拡大断面図である。FIG. 11 is an enlarged cross-sectional view illustrating a state in which a driving IC and a display panel are normally electrically connected in the semiconductor device according to the conventional example illustrated in FIG. 10. 図１０に示した従来の一例による半導体装置において、駆動用ＩＣと表示パネルとの間で接続不良が発生した状態を示した拡大断面図である。FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10. 図１０に示した従来の一例による半導体装置において、駆動用ＩＣと表示パネルとの間で接続不良が発生した状態を示した拡大断面図である。FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10. 図１０に示した従来の一例による半導体装置において、駆動用ＩＣと表示パネルとの間で接続不良が発生した状態を示した拡大断面図である。FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10. 図１０に示した従来の一例による半導体装置において、駆動用ＩＣと表示パネルとの間で接続不良が発生した状態を示した拡大断面図である。FIG. 11 is an enlarged cross-sectional view illustrating a state in which a connection failure has occurred between a driving IC and a display panel in the semiconductor device according to the conventional example illustrated in FIG. 10.
　以下、本発明の実施形態について図面を参照して説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
　まず、図１～図４を参照して、本発明の一実施形態による駆動用ＩＣ１０を備えた半導体装置１の構造について説明する。 First, the structure of the semiconductor device 1 including the driving IC 10 according to an embodiment of the present invention will be described with reference to FIGS.
　本発明の一実施形態による半導体装置１は、例えば、液晶表示装置に用いられる。また、半導体装置１は、図１および図２に示すように、駆動用ＩＣ１０と、駆動用ＩＣ１０がフェイスダウン実装された液晶表示パネル２０と、駆動用ＩＣ１０および液晶表示パネル２０を互いに電気的に接続するためのＡＣＦ（異方性導電フィルム）３０とを備えている。なお、駆動用ＩＣ１０は、本発明の「半導体素子」の一例であり、液晶表示パネル２０は、本発明の「基板」の一例である。また、ＡＣＦ３０は、本発明の「異方性導電層」の一例である。 The semiconductor device 1 according to an embodiment of the present invention is used in, for example, a liquid crystal display device. 1 and 2, the semiconductor device 1 electrically connects the driving IC 10, the liquid crystal display panel 20 on which the driving IC 10 is mounted face down, and the driving IC 10 and the liquid crystal display panel 20 to each other. And an ACF (anisotropic conductive film) 30 for connection. The driving IC 10 is an example of the “semiconductor element” in the present invention, and the liquid crystal display panel 20 is an example of the “substrate” in the present invention. The ACF 30 is an example of the “anisotropic conductive layer” in the present invention.
　駆動用ＩＣ１０は、シリコンなどからなる半導体基板１１と、半導体基板１１の主表面１１ａ上の所定領域に設けられた複数の配線部１２と、複数の配線部１２上に設けられた複数のバンプ電極１３とを含んでいる。 The driving IC 10 includes a semiconductor substrate 11 made of silicon or the like, a plurality of wiring portions 12 provided in a predetermined region on the main surface 11a of the semiconductor substrate 11, and a plurality of bump electrodes provided on the plurality of wiring portions 12. 13 and so on.
　配線部１２は、例えば、Ａｌにより形成されている。なお、配線部１２は、例えば、ＣｕなどのＡｌ以外の金属により形成されていてもよい。また、配線部１２の表面は、平坦面に形成されている。 The wiring part 12 is made of, for example, Al. In addition, the wiring part 12 may be formed with metals other than Al, such as Cu, for example. Moreover, the surface of the wiring part 12 is formed in the flat surface.
　複数のバンプ電極１３は、例えば、Ａｕにより形成されている。なお、バンプ電極１３、Ａｕ以外の金属により形成されていてもよい。 The plurality of bump electrodes 13 are made of, for example, Au. The bump electrode 13 may be formed of a metal other than Au.
　また、図３に示すように、バンプ電極１３は、例えば、約１５μｍ（約１２μｍ以上約２０μｍ以下）のバンプ高さＨ１と、約５０μｍ×約５０μｍの面積とを有するように形成されている。なお、バンプ高さＨ１とは、バンプ電極１３と配線部１２との界面から、バンプ電極１３の後述する凸部１３ｃの先端までの高さをいう。 Further, as shown in FIG. 3, the bump electrode 13 is formed to have, for example, a bump height H1 of about 15 μm (about 12 μm to about 20 μm) and an area of about 50 μm × about 50 μm. The bump height H1 refers to the height from the interface between the bump electrode 13 and the wiring portion 12 to the tip of a convex portion 13c (described later) of the bump electrode 13.
　ここで、本実施形態では、バンプ電極１３の接続面１３ａ（ＡＣＦ３０の後述する導電粒子３２と電気的に接続する面）の略全域は、複数の凹部１３ｂと複数の凸部１３ｃとを有する凹凸形状に形成されている。なお、接続面１３ａは、本発明の「表面」の一例である。 Here, in the present embodiment, the substantially entire region of the connection surface 13a of the bump electrode 13 (surface electrically connected to the conductive particles 32 described later of the ACF 30) is an uneven surface having a plurality of recesses 13b and a plurality of protrusions 13c. It is formed into a shape. The connection surface 13a is an example of the “surface” in the present invention.
　また、本実施形態では、凹部１３ｂと凸部１３ｃとの段差Ｈ２は、例えば、約１．５μｍ以上２.５μｍ以下の大きさを有する。また、図４に示すように、複数の凹部１３ｂは、ＡＣＦ３０の後述する導電粒子３２（図５参照）の粒径よりも小さい幅Ｗ１を有する。また、複数の凸部１３ｃも、導電粒子３２の粒径よりも小さい幅Ｗ２を有する。 In the present embodiment, the step H2 between the concave portion 13b and the convex portion 13c has a size of about 1.5 μm or more and 2.5 μm or less, for example. As shown in FIG. 4, the plurality of recesses 13 b have a width W <b> 1 that is smaller than the particle size of conductive particles 32 (see FIG. 5) described later of the ACF 30. The plurality of convex portions 13 c also have a width W <b> 2 that is smaller than the particle size of the conductive particles 32.
　また、バンプ電極１３は、複数の凸部１３ｃの先端を結んだ線（図示せず）が半導体基板１１の主表面１１ａに対して略平行になるように形成されている。 The bump electrode 13 is formed so that a line (not shown) connecting the tips of the plurality of convex portions 13 c is substantially parallel to the main surface 11 a of the semiconductor substrate 11.
　バンプ電極１３は、例えば電解メッキ法などにより形成することが可能である。また、バンプ電極１３の複数の凹部１３ｂおよび凸部１３ｃは、例えばメッキ速度を高くするなどメッキ条件を制御したり、バンプ電極１３の接続面１３ａを化学的または機械的に表面処理することにより、容易に形成することが可能である。 The bump electrode 13 can be formed by, for example, an electrolytic plating method. The plurality of concave portions 13b and convex portions 13c of the bump electrode 13 are controlled by plating conditions such as increasing the plating speed, or by chemically or mechanically surface-treating the connection surface 13a of the bump electrode 13, It can be easily formed.
　図２に示すように、液晶表示パネル２０には、駆動用ＩＣ１０の複数のバンプ電極１３に対応する位置に、複数の配線電極２１が設けられている。 As shown in FIG. 2, the liquid crystal display panel 20 is provided with a plurality of wiring electrodes 21 at positions corresponding to the plurality of bump electrodes 13 of the driving IC 10.
　また、ＡＣＦ３０は、絶縁性の樹脂フィルムからなる接着層３１と、接着層３１内に含有された複数の導電粒子３２とによって構成されている。この導電粒子３２は、コアとなる樹脂粒子に金属層をコーティングしたものや金属粒子によって構成されている。また、導電粒子３２は、バンプ電極１３と液晶表示パネル２０の配線電極２１との間で均一な密度で配置されている。 The ACF 30 includes an adhesive layer 31 made of an insulating resin film and a plurality of conductive particles 32 contained in the adhesive layer 31. The conductive particles 32 are formed by coating resin particles serving as a core with a metal layer or metal particles. Further, the conductive particles 32 are arranged at a uniform density between the bump electrodes 13 and the wiring electrodes 21 of the liquid crystal display panel 20.
　また、本実施形態では、導電粒子３２は、例えば、約２．５μｍ～約３．５μｍの粒径を有する。すなわち、バンプ電極１３の凹部１３ｂと凸部１３ｃとの段差Ｈ２（図３参照）は、導電粒子３２の粒径に対して、約４３％（＝段差Ｈ２の最小値／導電粒子３２の粒径の最大値）以上（約４５％以上）、約１００％（＝段差Ｈ２の最大値／導電粒子３２の粒径の最小値）以下の大きさを有する。また、バンプ電極１３の凹部１３ｂと凸部１３ｃとの段差Ｈ２は、導電粒子３２の粒径に対して、約－２μｍ（＝段差Ｈ２の最小値－導電粒子３２の粒径の最大値）以上、０μｍ（＝段差Ｈ２の最大値－導電粒子３２の粒径の最小値）以下の大きさを有する。 In the present embodiment, the conductive particles 32 have a particle size of about 2.5 μm to about 3.5 μm, for example. That is, the step H2 (see FIG. 3) between the concave portion 13b and the convex portion 13c of the bump electrode 13 is about 43% of the particle size of the conductive particles 32 (= the minimum value of the step H2 / the particle size of the conductive particles 32). (Maximum value of the step) and about 100% (= maximum value of the step H2 / minimum value of the particle diameter of the conductive particles 32). Further, the step H2 between the concave portion 13b and the convex portion 13c of the bump electrode 13 is about −2 μm (= the minimum value of the step H2−the maximum value of the particle size of the conductive particles 32) or more with respect to the particle size of the conductive particles 32. , 0 μm (= maximum value of step H2−minimum value of particle diameter of conductive particles 32) or less.
　そして、図１に示すように、導電粒子３２が駆動用ＩＣ１０のバンプ電極１３と液晶表示パネル２０の配線電極２１とに挟まれることによって、駆動用ＩＣ１０と液晶表示パネル２０とが互いに電気的に接続されている。 As shown in FIG. 1, the conductive particles 32 are sandwiched between the bump electrodes 13 of the driving IC 10 and the wiring electrodes 21 of the liquid crystal display panel 20, whereby the driving IC 10 and the liquid crystal display panel 20 are electrically connected to each other. It is connected.
　次に、図５および図６を参照して、駆動用ＩＣ１０と液晶表示パネル２０との接続状態について詳細に説明する。 Next, referring to FIGS. 5 and 6, the connection state between the driving IC 10 and the liquid crystal display panel 20 will be described in detail.
　図５に示すように、駆動用ＩＣ１０の全てのバンプ電極１３が、所望のバンプ高さを有するバンプ電極１３ｄである場合、駆動用ＩＣ１２と液晶表示パネル２０とによりＡＣＦ３０を挟み込んだ状態で、バンプ電極１３ｄの複数の凸部１３ｃの先端が、導電粒子３２により潰される。具体的には、バンプ電極１３ｄの複数の凸部１３ｃのうち、導電粒子３２により潰される量が最も多い凸部１３ｃは、例えば、段差Ｈ２（図３参照）に対して半分以上潰される。そして、バンプ電極１３ｄは、導電粒子３２を介して、液晶表示パネル２０の配線電極２１に電気的に接続される。 As shown in FIG. 5, when all the bump electrodes 13 of the driving IC 10 are bump electrodes 13d having a desired bump height, the bumps 13 are sandwiched between the driving IC 12 and the liquid crystal display panel 20 and the ACF 30 is sandwiched between them. The tips of the plurality of convex portions 13 c of the electrode 13 d are crushed by the conductive particles 32. Specifically, among the plurality of convex portions 13c of the bump electrode 13d, the convex portion 13c that is most crushed by the conductive particles 32 is, for example, crushed more than half with respect to the step H2 (see FIG. 3). The bump electrode 13 d is electrically connected to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
　その一方、図６に示すように、製造ばらつきにより、駆動用ＩＣ１０に、所望のバンプ高さを有するバンプ電極１３ｄと、バンプ電極１３ｄよりも小さいバンプ高さを有するバンプ電極１３ｅとが形成された場合、バンプ電極１３ｄは、図５に示したバンプ電極１３ｄと同程度だけ、凸部１３ｃの先端が、導電粒子３２により潰される。その一方、バンプ電極１３ｅの凸部１３ｃは、例えば、段差Ｈ２（図３参照）に対して半分以下だけ先端が潰される。すなわち、バンプ電極１３ｄよりも小さいバンプ高さを有するバンプ電極１３ｅは、バンプ電極１３ｄよりも少ない量だけ先端が潰されることになる。そして、バンプ電極１３ｅも、導電粒子３２を介して、液晶表示パネル２０の配線電極２１に電気的に接続される。 On the other hand, as shown in FIG. 6, due to manufacturing variations, a bump electrode 13d having a desired bump height and a bump electrode 13e having a bump height smaller than the bump electrode 13d are formed in the driving IC 10. In this case, the bump electrode 13d is crushed by the conductive particles 32 at the tip of the convex portion 13c to the same extent as the bump electrode 13d shown in FIG. On the other hand, the tip of the convex portion 13c of the bump electrode 13e is crushed by, for example, half or less of the step H2 (see FIG. 3). That is, the tip of the bump electrode 13e having a bump height smaller than that of the bump electrode 13d is crushed by an amount smaller than that of the bump electrode 13d. The bump electrode 13 e is also electrically connected to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
　本実施形態では、駆動用ＩＣ１０を導電粒子３２（ＡＣＦ３０）を介して液晶表示パネル２０に接続する場合、駆動用ＩＣ１０のバンプ電極１３ｄが導電粒子３２を介して液晶表示パネル２０の配線電極２１に接続（押圧）された状態から、さらに、駆動用ＩＣ１０を液晶表示パネル２０側に押圧する。これにより、バンプ電極１３ｅも導電粒子３２を介して液晶表示パネル２０の配線電極２１に接続（押圧）される。 In the present embodiment, when the driving IC 10 is connected to the liquid crystal display panel 20 via the conductive particles 32 (ACF 30), the bump electrodes 13d of the driving IC 10 are connected to the wiring electrodes 21 of the liquid crystal display panel 20 via the conductive particles 32. From the connected (pressed) state, the driving IC 10 is further pressed toward the liquid crystal display panel 20. Thereby, the bump electrode 13 e is also connected (pressed) to the wiring electrode 21 of the liquid crystal display panel 20 through the conductive particles 32.
　なお、図５および図６では、バンプ電極１３の凸部１３ｃの先端は、液晶表示パネル２０の配線電極２１から所定の距離を隔てて配置されているが、バンプ電極１３の凸部１３ｃの先端が液晶表示パネル２０の配線電極２１に直接接触していてもよい。この場合、本実施形態では、凸部１３ｃの先端は、配線電極２１により潰されるので、駆動用ＩＣ１０の回路に押圧力が加わるのを抑制することが可能であり、駆動用ＩＣ１０の回路が損傷するのを抑制することが可能である。 5 and 6, the tip of the convex portion 13 c of the bump electrode 13 is arranged at a predetermined distance from the wiring electrode 21 of the liquid crystal display panel 20, but the tip of the convex portion 13 c of the bump electrode 13 is arranged. May be in direct contact with the wiring electrode 21 of the liquid crystal display panel 20. In this case, in this embodiment, since the tip of the convex portion 13c is crushed by the wiring electrode 21, it is possible to suppress the pressing force from being applied to the circuit of the driving IC 10, and the circuit of the driving IC 10 is damaged. It is possible to suppress this.
　本実施形態では、上記のように、バンプ電極１３の接続面１３ａを、複数の凹部１３ｂおよび複数の凸部１３ｃを有する凹凸形状に形成することによって、駆動用ＩＣ１０と液晶表示パネル２０とによりＡＣＦ３０を挟み込む際に、ＡＣＦ３０の導電粒子３２がバンプ電極１３上を横方向（Ａ方向）（半導体基板１１の主表面１１ａに平行な方向）に移動するのを抑制することができる。これにより、バンプ電極１３と配線電極２１との間において、局所的に導電粒子３２の密度が低くなったり高くなったりするのを抑制することができるので、バンプ電極１３上の導電粒子３２の密度を均一にすることができる。 In the present embodiment, as described above, the connection surface 13a of the bump electrode 13 is formed in a concavo-convex shape having a plurality of concave portions 13b and a plurality of convex portions 13c, whereby the driving IC 10 and the liquid crystal display panel 20 use the ACF 30. It is possible to prevent the conductive particles 32 of the ACF 30 from moving in the lateral direction (A direction) (direction parallel to the main surface 11a of the semiconductor substrate 11) on the bump electrode 13 when sandwiching. Thereby, since it can suppress that the density of the electroconductive particle 32 becomes low locally between the bump electrode 13 and the wiring electrode 21, it can suppress, The density of the electroconductive particle 32 on the bump electrode 13 Can be made uniform.
　すなわち、導電粒子３２がバンプ電極１３と液晶表示パネル２０の配線電極２１との間から外側に移動するのを抑制することができるので、バンプ電極１３と配線電極２１との間で導電粒子３２が存在しなくなるのを抑制することができる。これにより、駆動用ＩＣ１０と液晶表示パネル２０とが導電粒子３２により電気的に接続されなくなるのを抑制することができるので、駆動用ＩＣ１０と液晶表示パネル２０との間で接続不良が発生するのを抑制することができる。また、バンプ電極１３と配線電極２１との間で導電粒子３２が存在しなくなるのを抑制することができるので、バンプ電極１３が液晶表示パネル２０の配線電極２１に直接接触するのを抑制することができる。これにより、駆動用ＩＣ１０に押圧力が加わるのを抑制することができるので、駆動用ＩＣ１０の回路が損傷するのをより抑制することができる。 That is, since the conductive particles 32 can be prevented from moving outward from between the bump electrodes 13 and the wiring electrodes 21 of the liquid crystal display panel 20, the conductive particles 32 are between the bump electrodes 13 and the wiring electrodes 21. It can suppress that it does not exist. As a result, it is possible to prevent the driving IC 10 and the liquid crystal display panel 20 from being electrically connected by the conductive particles 32, so that a connection failure occurs between the driving IC 10 and the liquid crystal display panel 20. Can be suppressed. Moreover, since it can suppress that the electrically-conductive particle 32 does not exist between the bump electrode 13 and the wiring electrode 21, it suppresses that the bump electrode 13 contacts the wiring electrode 21 of the liquid crystal display panel 20 directly. Can do. Thereby, since it can suppress that pressing force is applied to the drive IC 10, it is possible to further suppress the circuit of the drive IC 10 from being damaged.
　また、バンプ電極１３と配線電極２１との間において、局所的に導電粒子３２の密度が高くなるのを抑制することができるので、導電粒子３２バンプ電極１３と配線電極２１との間で縦方向（Ｂ方向）（Ａ方向に垂直な方向）に並ぶのを抑制することができる。これにより、導電粒子３２が、バンプ電極１３と配線電極２１との間で挟まれることにより、塑性変形して潰れるのを抑制することができるので、駆動用ＩＣ１０と液晶表示パネル２０との間で接続不良が発生するのをより抑制することができる。 In addition, since the density of the conductive particles 32 is locally increased between the bump electrode 13 and the wiring electrode 21, the vertical direction between the conductive particle 32 bump electrode 13 and the wiring electrode 21 can be prevented. Arrangement in the (B direction) (direction perpendicular to the A direction) can be suppressed. As a result, the conductive particles 32 can be prevented from being plastically deformed and crushed by being sandwiched between the bump electrode 13 and the wiring electrode 21, so that the drive IC 10 and the liquid crystal display panel 20 can be suppressed. The occurrence of poor connection can be further suppressed.
　また、本実施形態では、上記のように、凹部１３ｂと凸部１３ｃとの段差Ｈ２を、導電粒子３２の粒径に対して４５％以上の大きさを有するように形成することによって、段差Ｈ２が導電粒子３２の粒径に対して小さくなりすぎるのを抑制することができる。これにより、導電粒子３２がバンプ電極１３上を移動するのを、効果的に抑制することができる。 Further, in the present embodiment, as described above, the step H2 between the concave portion 13b and the convex portion 13c is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles 32. Can be suppressed from becoming too small with respect to the particle size of the conductive particles 32. Thereby, it can suppress effectively that the electrically-conductive particle 32 moves on the bump electrode 13. FIG.
　また、本実施形態では、上記のように、凸部１３ｃを、導電粒子３２に押圧されることにより変形するように形成する。これにより、複数のバンプ電極１３間でバンプ高さにばらつきが発生した場合に、バンプ高さの大きいバンプ電極１３ｄが導電粒子３２に接触した状態から、さらにバンプ電極１３ｄ（駆動用ＩＣ１０）を導電粒子３２側に押圧させることができる。これにより、バンプ高さの小さいバンプ電極１３ｅが導電粒子３２に接触しなくなるのを抑制することができるので、駆動用ＩＣ１０と液晶表示パネル２０との間で接続不良が発生するのをさらに抑制することができる。本実施形態では、凹部１３ｂと凸部１３ｃとの段差Ｈ２を、導電粒子３２の粒径に対して４５％以上の大きさを有するように形成しているので、複数のバンプ電極１３間のバンプ高さのばらつきが大きい場合にも、駆動用ＩＣ１０と液晶表示パネル２０との間で接続不良が発生するのを容易に抑制することができる。 In the present embodiment, as described above, the convex portion 13 c is formed so as to be deformed by being pressed by the conductive particles 32. As a result, when the bump height varies among the plurality of bump electrodes 13, the bump electrode 13d (driving IC 10) is further conducted from the state in which the bump electrode 13d having a large bump height is in contact with the conductive particles 32. The particles 32 can be pressed. As a result, it is possible to prevent the bump electrode 13e having a small bump height from coming into contact with the conductive particles 32, and thus further suppress the occurrence of poor connection between the driving IC 10 and the liquid crystal display panel 20. be able to. In the present embodiment, the step H2 between the concave portion 13b and the convex portion 13c is formed so as to have a size of 45% or more with respect to the particle size of the conductive particles 32. Even when the height variation is large, it is possible to easily suppress a connection failure between the driving IC 10 and the liquid crystal display panel 20.
　また、本実施形態では、上記のように、複数の凹部１３ｂを、導電粒子３２の粒径よりも小さい幅Ｗ１に形成することによって、導電粒子３２が凹部１３ｂの内部に入り込むのを抑制することができる。すなわち、導電粒子３２がバンプ電極１３の凸部１３ｃと電気的に接続しなくなるのを抑制することができる。 In the present embodiment, as described above, the plurality of recesses 13b are formed to have a width W1 smaller than the particle diameter of the conductive particles 32, thereby suppressing the conductive particles 32 from entering the recesses 13b. Can do. That is, it is possible to prevent the conductive particles 32 from being electrically connected to the convex portion 13 c of the bump electrode 13.
　また、本実施形態では、上記のように、複数の凸部１３ｃを、導電粒子３２の粒径よりも小さい幅Ｗ２に形成することによって、凸部１３ｃが変形しにくくなるのを抑制することができるので、凸部１３ｃを、導電粒子３２に押圧されることにより変形するように、容易に形成することができる。 Further, in the present embodiment, as described above, by forming the plurality of convex portions 13c to have a width W2 smaller than the particle size of the conductive particles 32, it is possible to suppress the convex portions 13c from being easily deformed. Therefore, the convex portion 13 c can be easily formed so as to be deformed by being pressed by the conductive particles 32.
　また、本実施形態では、上記のように、複数の凹部１３ｂおよび複数の凸部１３ｃを、接続面１３ａの略全域に形成することによって、駆動用ＩＣ１０と液晶表示パネル２０とによりＡＣＦ３０を挟み込む際に、導電粒子３２がバンプ電極１３上を移動するのを効果的に抑制することができる。これにより、導電粒子３２がバンプ電極１３と配線電極２１との間から外側に移動するのをより抑制することができるとともに、バンプ電極１３と配線電極２１との間の導電粒子３２の密度をより均一にすることができる。 Further, in the present embodiment, as described above, when the ACF 30 is sandwiched between the driving IC 10 and the liquid crystal display panel 20 by forming the plurality of concave portions 13b and the plurality of convex portions 13c in substantially the entire area of the connection surface 13a. In addition, the movement of the conductive particles 32 on the bump electrode 13 can be effectively suppressed. As a result, the conductive particles 32 can be further suppressed from moving outward from between the bump electrode 13 and the wiring electrode 21, and the density of the conductive particles 32 between the bump electrode 13 and the wiring electrode 21 can be further increased. It can be made uniform.
　また、本実施形態では、上記のように、凹部１３ｂと凸部１３ｃとの段差Ｈ２を、導電粒子３２の粒径に対して１００％以下の大きさにすることによって、導電粒子３２が凹部１３ｂの内部に入り込んで凸部１３ｃと電気的に接続しなくなるのを抑制することができる。 Further, in the present embodiment, as described above, the step H2 between the concave portion 13b and the convex portion 13c is set to 100% or less with respect to the particle size of the conductive particles 32, so that the conductive particles 32 become the concave portions 13b. Can be prevented from entering the interior of the lens and being not electrically connected to the convex portion 13c.
　また、本実施形態では、上記のように、バンプ電極１３を、Ａｕにより形成することによって、凸部１３ｃを、導電粒子３２に押圧されることにより変形するように、容易に形成することができる。 In the present embodiment, as described above, the bump electrode 13 is formed of Au, so that the convex portion 13 c can be easily formed so as to be deformed by being pressed by the conductive particles 32. .
　なお、今回開示された実施形態は、すべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、上記した実施形態の説明ではなく請求の範囲によって示され、さらに請求の範囲と均等の意味および範囲内でのすべての変更が含まれる。 In addition, it should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims, and further includes meanings equivalent to the scope of claims and all modifications within the scope.
　たとえば、上記実施形態では、バンプ電極が駆動用ＩＣ（半導体素子）に設けられている例について示したが、本発明はこれに限らず、図７に示した本発明の第１変形例のように、バンプ電極１２２が液晶表示パネル（基板）１２０に設けられていてもよい。 For example, in the above-described embodiment, the example in which the bump electrode is provided in the driving IC (semiconductor element) has been described. However, the present invention is not limited to this, and the first modification of the present invention illustrated in FIG. In addition, the bump electrode 122 may be provided on the liquid crystal display panel (substrate) 120.
　また、上記実施形態では、半導体素子として駆動用ＩＣを用いるとともに、基板として液晶表示パネルを用いた例について示したが、本発明はこれに限らず、半導体素子として駆動用ＩＣ以外の半導体素子を用いてもよいし、基板として液晶表示パネル以外の基板を用いてもよい。 In the above embodiment, an example in which a driving IC is used as a semiconductor element and a liquid crystal display panel is used as a substrate has been described. However, the present invention is not limited thereto, and a semiconductor element other than the driving IC is used as a semiconductor element. Alternatively, a substrate other than the liquid crystal display panel may be used as the substrate.
　また、上記実施形態では、異方性導電層としてＡＣＦを用いた例について示したが、本発明はこれに限らず、異方性導電層として、ＡＣＰ（異方性導電ペースト）を用いてもよい。 In the above embodiment, an example in which ACF is used as the anisotropic conductive layer has been described. However, the present invention is not limited thereto, and ACP (anisotropic conductive paste) may be used as the anisotropic conductive layer. Good.
　また、上記実施形態では、凹部と凸部との段差を、導電粒子の粒径に対して４３％以上の大きさを有するように形成した例について示したが、凹部と凸部との段差を、導電粒子の粒径に対してさらに大きくした方が効果的である。すなわち、凹部と凸部との段差を、例えば、導電粒子の粒径の５０％よりも大きくしたり、７０％以上の大きさを有するように形成すれば、複数のバンプ電極間のバンプ高さのばらつきがさらに大きい場合にも、駆動用ＩＣと液晶表示パネルとの間で接続不良が発生するのを容易に抑制することができる。 Moreover, in the said embodiment, although the example which formed the level | step difference of a recessed part and a convex part so that it had a magnitude | size of 43% or more with respect to the particle size of an electrically-conductive particle was shown, the level | step difference between a recessed part and a convex part was shown. It is more effective to further increase the particle size of the conductive particles. That is, if the step between the concave portion and the convex portion is formed so as to be larger than 50% of the particle size of the conductive particles or have a size of 70% or more, the bump height between the plurality of bump electrodes is increased. Even when the variation is larger, it is possible to easily suppress a connection failure between the driving IC and the liquid crystal display panel.
　また、上記実施形態では、バンプ電極の接続面の略全域を凹凸形状に形成した例について示したが、本発明はこれに限らず、接続面の略全域を凹凸形状に形成しなくてもよい。なお、上記実施形態の駆動用ＩＣ１０、液晶表示パネル２０およびＡＣＦ３０を用いて行った確認実験では、接続面１３ａの３０％以上の領域を凹凸形状に形成すれば、バンプ電極１３と液晶表示パネル２０の配線電極２１とが良好に電気的に接続されることが確認できた。 In the above-described embodiment, an example in which substantially the entire connection surface of the bump electrode is formed in a concavo-convex shape has been described. However, the present invention is not limited thereto, and the substantially entire connection surface may not be formed in a concavo-convex shape. . In the confirmation experiment performed using the driving IC 10, the liquid crystal display panel 20, and the ACF 30 according to the above embodiment, the bump electrode 13 and the liquid crystal display panel 20 can be formed by forming a region of 30% or more of the connection surface 13 a in a concave-convex shape. It was confirmed that the wiring electrode 21 was electrically connected well.
　また、上記実施形態では、凹部と凸部との段差を、導電粒子の粒径に対して１００％以下の大きさを有するように形成した例について示したが、本発明はこれに限らず、凹部と凸部との段差を、導電粒子の粒径よりも大きく形成してもよい。 Moreover, in the said embodiment, although the example which formed the level | step difference of a recessed part and a convex part so that it had a magnitude | size of 100% or less with respect to the particle size of an electroconductive particle was shown, this invention is not limited to this, You may form the level | step difference of a recessed part and a convex part larger than the particle size of electroconductive particle.
　また、上記実施形態では、バンプ電極を、複数の凸部の先端を結んだ線が半導体基板の主表面に対して略平行になるように形成した例について示したが、本発明はこれに限らず、図８に示した本発明の第２変形例のように、バンプ電極２１３が、複数の凸部２１３ｃの先端を結んだ線（図示せず）が凸形状になるように形成されていてもよい。この場合にも、複数の凸部２１３ｃにより、導電粒子がバンプ電極２１３上を移動するのを抑制することが可能である。 In the above embodiment, the bump electrode is shown as an example in which the line connecting the tips of the plurality of protrusions is formed substantially parallel to the main surface of the semiconductor substrate. However, the present invention is not limited to this. First, as in the second modification of the present invention shown in FIG. 8, the bump electrode 213 is formed so that a line (not shown) connecting the tips of the plurality of convex portions 213c has a convex shape. Also good. Also in this case, it is possible to prevent the conductive particles from moving on the bump electrode 213 by the plurality of convex portions 213c.
　また、図９に示した本発明の第３変形例のように、バンプ電極３１３の凹部３１３ｂ同士の間や、凸部３１３ｃ同士の間が、半導体基板１１の主表面１１ａに対して略平行に形成されていてもよい。この場合も、凹部３１３ｂの幅Ｗ１１、および、凸部３１３ｃの幅Ｗ１２は、導電粒子の粒径よりも小さい方が好ましい。 Further, as in the third modification of the present invention shown in FIG. 9, the gaps 313 b of the bump electrodes 313 and the gaps 313 c are substantially parallel to the main surface 11 a of the semiconductor substrate 11. It may be formed. Also in this case, the width W11 of the concave portion 313b and the width W12 of the convex portion 313c are preferably smaller than the particle diameter of the conductive particles.
　１　半導体装置
　１０　駆動用ＩＣ（半導体素子）
　１３、１３ｄ、１３ｅ、１２２、２１３、３１３　バンプ電極
　１３ａ　接続面（表面）
　１３ｂ、３１３ｂ　凹部
　１３ｃ、２１３ｃ、３１３ｃ　凸部
　２０、１２０　液晶表示パネル（基板）
　３０　ＡＣＦ（異方性導電層）
　３２　導電粒子
　Ｈ２　段差
　Ｗ１、Ｗ１１　幅
　Ｗ２、Ｗ１２　幅 DESCRIPTION OF SYMBOLS 1 Semiconductor device 10 Drive IC (semiconductor element)
13, 13d, 13e, 122, 213, 313 Bump electrode 13a Connection surface (surface)
13b, 313b Concave part 13c, 213c, 313c Convex part 20, 120 Liquid crystal display panel (substrate)
30 ACF (anisotropic conductive layer)
32 Conductive particle H2 Level difference W1, W11 width W2, W12 width

Claims (10)

  1. 　異方性導電層を介して互いに電気的に接続される半導体素子および基板の少なくとも一方に含まれるバンプ電極であって、
    　前記異方性導電層に電気的に接続される表面は、複数の凹部および複数の凸部を有する凹凸形状を含むように形成されており、
    　前記凹部と前記凸部との段差は、前記異方性導電層に含有される導電粒子の粒径に対して４５％以上の大きさを有し、
    　前記凸部は、前記導電粒子に電気的に接続するために設けられているとともに、前記導電粒子に押圧されることにより変形するように形成されていることを特徴とするバンプ電極。     A bump electrode included in at least one of a semiconductor element and a substrate electrically connected to each other through an anisotropic conductive layer,
    The surface electrically connected to the anisotropic conductive layer is formed so as to include a concavo-convex shape having a plurality of concave portions and a plurality of convex portions,
    The step between the concave portion and the convex portion has a size of 45% or more with respect to the particle size of the conductive particles contained in the anisotropic conductive layer,
    The bump is provided so as to be electrically connected to the conductive particles, and is formed so as to be deformed by being pressed by the conductive particles.
  2. 　前記複数の凹部は、前記導電粒子の粒径よりも小さい幅に形成されていることを特徴とする請求項１に記載のバンプ電極。 The bump electrode according to claim 1, wherein the plurality of recesses are formed to have a width smaller than a particle size of the conductive particles.
  3. 　前記複数の凸部は、前記導電粒子の粒径よりも小さい幅に形成されていることを特徴とする請求項１または２に記載のバンプ電極。 The bump electrode according to claim 1 or 2, wherein the plurality of convex portions are formed to have a width smaller than a particle size of the conductive particles.
  4. 　前記複数の凹部および前記複数の凸部は、前記異方性導電層に電気的に接続される表面の３０％以上の領域に形成されていることを特徴とする請求項１～３のいずれか１項に記載のバンプ電極。 The plurality of recesses and the plurality of protrusions are formed in a region of 30% or more of the surface electrically connected to the anisotropic conductive layer. The bump electrode according to item 1.
  5. 　前記凹部と前記凸部との段差は、前記導電粒子の粒径に対して１００％以下の大きさを有することを特徴とする請求項１～４のいずれか１項に記載のバンプ電極。 The bump electrode according to any one of claims 1 to 4, wherein a step between the concave portion and the convex portion has a size of 100% or less with respect to a particle size of the conductive particles.
  6. 　前記凹部と前記凸部との段差は、前記導電粒子の粒径に対して－２μｍ以上０μｍ以下の大きさを有することを特徴とする請求項１～５のいずれか１項に記載のバンプ電極。 6. The bump electrode according to claim 1, wherein the step between the concave portion and the convex portion has a size of −2 μm or more and 0 μm or less with respect to the particle diameter of the conductive particles. .
  7. 　前記凸部は、前記導電粒子よりも小さい硬度を有することを特徴とする請求項１～６のいずれか１項に記載のバンプ電極。 The bump electrode according to any one of claims 1 to 6, wherein the convex portion has a hardness smaller than that of the conductive particles.
  8. 　少なくとも前記凸部は、Ａｕにより形成されていることを特徴とする請求項１～７のいずれか１項に記載のバンプ電極。 The bump electrode according to any one of claims 1 to 7, wherein at least the protrusion is made of Au.
  9. 　請求項１～８のいずれか１項に記載のバンプ電極を備えることを特徴とする半導体素子。 A semiconductor element comprising the bump electrode according to any one of claims 1 to 8.
  10. 　請求項９に記載の半導体素子と、
    　前記半導体素子に異方性導電層を介して電気的に接続される基板とを備えることを特徴とする半導体装置。     A semiconductor device according to claim 9;
    A semiconductor device comprising: a substrate electrically connected to the semiconductor element through an anisotropic conductive layer.
PCT/JP2010/065269 2009-11-16 2010-09-07 Bump electrode, semiconductor element, and semiconductor device WO2011058810A1 (en)

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CN113823637A (en) * 2020-06-19 2021-12-21 元太科技工业股份有限公司 Electronic device
CN113823637B (en) * 2020-06-19 2024-05-10 元太科技工业股份有限公司 Electronic device
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