WO2011046191A9 - 半導体製造用治具及びその製造方法 - Google Patents

半導体製造用治具及びその製造方法 Download PDF

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Publication number
WO2011046191A9
WO2011046191A9 PCT/JP2010/068095 JP2010068095W WO2011046191A9 WO 2011046191 A9 WO2011046191 A9 WO 2011046191A9 JP 2010068095 W JP2010068095 W JP 2010068095W WO 2011046191 A9 WO2011046191 A9 WO 2011046191A9
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WO
WIPO (PCT)
Prior art keywords
jig
semiconductor production
surface area
producing same
coating film
Prior art date
Application number
PCT/JP2010/068095
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English (en)
French (fr)
Other versions
WO2011046191A1 (ja
Inventor
洋一 紙透
近藤　新二
寧司 深澤
將徳 川口
篤人 橋本
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旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Priority to CN2010800466533A priority Critical patent/CN102598226A/zh
Priority to JP2011536184A priority patent/JP5652402B2/ja
Publication of WO2011046191A1 publication Critical patent/WO2011046191A1/ja
Priority to US13/446,972 priority patent/US9194042B2/en
Publication of WO2011046191A9 publication Critical patent/WO2011046191A9/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　本発明は、半導体製造工程でのＣＶＤ装置に用いられる、治具基材及び治具基材上に形成されたＳｉＣ被膜からなる半導体製造用治具であって、前記ＳｉＣ被膜は、表面が凹凸の無い平滑なものとみなして算出した見かけ上の表面積Ｓ１と、実際の表面積Ｓ２との表面積比（表面積Ｓ２／表面積Ｓ１）が、１．４～３．２である、半導体製造用治具、およびその半導体製造用治具の製造方法に関する。
PCT/JP2010/068095 2009-10-14 2010-10-14 半導体製造用治具及びその製造方法 WO2011046191A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010800466533A CN102598226A (zh) 2009-10-14 2010-10-14 半导体制造用夹具及其制造方法
JP2011536184A JP5652402B2 (ja) 2009-10-14 2010-10-14 半導体製造用治具及びその製造方法
US13/446,972 US9194042B2 (en) 2009-10-14 2012-04-13 Jig for semiconductor production and method for producing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009237502 2009-10-14
JP2009-237502 2009-10-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/446,972 Continuation US9194042B2 (en) 2009-10-14 2012-04-13 Jig for semiconductor production and method for producing same

Publications (2)

Publication Number Publication Date
WO2011046191A1 WO2011046191A1 (ja) 2011-04-21
WO2011046191A9 true WO2011046191A9 (ja) 2013-02-07

Family

ID=43876240

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/068095 WO2011046191A1 (ja) 2009-10-14 2010-10-14 半導体製造用治具及びその製造方法

Country Status (6)

Country Link
US (1) US9194042B2 (ja)
JP (1) JP5652402B2 (ja)
KR (1) KR20120101633A (ja)
CN (1) CN102598226A (ja)
TW (1) TWI508208B (ja)
WO (1) WO2011046191A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6068130B2 (ja) * 2012-12-25 2017-01-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2022122877A1 (en) * 2020-12-09 2022-06-16 Sgl Carbon Se Refractory carbide layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000327459A (ja) * 1999-05-26 2000-11-28 Asahi Glass Co Ltd 低圧ＣＶＤ用ＳｉＣ治具及びその製造法
US6936102B1 (en) * 1999-08-02 2005-08-30 Tokyo Electron Limited SiC material, semiconductor processing equipment and method of preparing SiC material therefor
JP4736076B2 (ja) * 2000-09-20 2011-07-27 東海カーボン株式会社 ＳｉＣ膜被覆ガラス状炭素材およびその製造方法
US7255775B2 (en) * 2002-06-28 2007-08-14 Toshiba Ceramics Co., Ltd. Semiconductor wafer treatment member
JP3956291B2 (ja) * 2002-09-19 2007-08-08 東芝セラミックス株式会社 半導体処理用部材
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
US20050229857A1 (en) * 2004-04-16 2005-10-20 Seh America, Inc. Support fixture for semiconductor wafers and associated fabrication method
JP2006103981A (ja) * 2004-09-30 2006-04-20 Sumitomo Osaka Cement Co Ltd 炭化珪素構造体及びそれを備えた光学レンズ用金型と電子放出素子並びに炭化珪素構造体の製造方法
JP2010509778A (ja) * 2006-11-10 2010-03-25 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド サセプタおよびサセプタを用いたｌｅｄ装置の形成方法

Also Published As

Publication number Publication date
US9194042B2 (en) 2015-11-24
KR20120101633A (ko) 2012-09-14
JP5652402B2 (ja) 2015-01-14
WO2011046191A1 (ja) 2011-04-21
CN102598226A (zh) 2012-07-18
JPWO2011046191A1 (ja) 2013-03-07
TWI508208B (zh) 2015-11-11
US20120196038A1 (en) 2012-08-02
TW201123338A (en) 2011-07-01

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