WO2011043567A2 - Élément de support de tranche, procédé pour sa fabrication et unité de polissage de tranche le comprenant - Google Patents

Élément de support de tranche, procédé pour sa fabrication et unité de polissage de tranche le comprenant Download PDF

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Publication number
WO2011043567A2
WO2011043567A2 PCT/KR2010/006755 KR2010006755W WO2011043567A2 WO 2011043567 A2 WO2011043567 A2 WO 2011043567A2 KR 2010006755 W KR2010006755 W KR 2010006755W WO 2011043567 A2 WO2011043567 A2 WO 2011043567A2
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WO
WIPO (PCT)
Prior art keywords
wafer
support
coating layer
support member
edge
Prior art date
Application number
PCT/KR2010/006755
Other languages
English (en)
Korean (ko)
Other versions
WO2011043567A3 (fr
Inventor
성재철
Original Assignee
실트론
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 실트론 filed Critical 실트론
Priority to EP10822212.6A priority Critical patent/EP2472571A4/fr
Priority to JP2012533073A priority patent/JP2013507764A/ja
Publication of WO2011043567A2 publication Critical patent/WO2011043567A2/fr
Publication of WO2011043567A3 publication Critical patent/WO2011043567A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings

Definitions

  • Embodiments relate to a wafer polishing apparatus, and more particularly, to a template assembly which is a pad in contact with a wafer in a final polishing process of a silicon wafer manufacturing process for a semiconductor device.
  • Wafer is widely used as a material for semiconductor device fabrication.
  • a wafer is a circular plate in which a thin ingot formed by circumferentially growing a type crystal of a material of a silicon semiconductor.
  • a silicon wafer manufacturing process for semiconductor devices undergoes a slicing process of cutting cylindrical silicon (ingots) into individual wafers. At this time, since the surface of the cut wafer is uneven, it has to go through the planarization process by polishing.
  • the wafer polishing apparatus includes a surface plate, a mounting block, a polishing unit, a center guide, and an out guide. As the polishing unit rotates, the wafer is polished by the interaction of the polishing cloth supplied to the surface plate and the polishing solution.
  • the method in which the polishing unit pressurizes the wafer is as follows.
  • a wafer is provided on a wafer support member such as a template assembly, and the wafer support member is adhered to the mounting block. Then, when the polishing unit rotates while applying a predetermined pressure to the mounting block, the wafer is smoothly polished to generate a friction between the wafer and the polishing cloth so that the surface of the wafer is mirrored.
  • the template assembly is used in a final polishing process, which is a wafer final polishing process as described above.
  • FIG. 1 is a view showing a conventional wafer support member.
  • a conventional wafer support member will be described with reference to FIG. 1.
  • a conventional wafer support member is formed by stacking an epoxy glass 110 at the edge of a back material 120.
  • the epoxy glass 110 is laminated with a plurality of layers, the wafer support member serves as a retainer ring for guiding and supporting the head from being polished in the polishing process of the wafer.
  • FIG. 2 is a view showing a front surface of a polished wafer.
  • FIG. 3 is a view showing in detail the scratch of the above-described wafer front surface.
  • AFM atomic layer deposition
  • Embodiments are intended to prevent damage to the front face of the wafer that may occur in the wafer polishing process.
  • Embodiments include a base substrate; A support part bonded to an edge of the base substrate at a predetermined width and rounded at its outermost part; And a coating layer provided on the edge of the support.
  • Another embodiment includes a wafer support member for supporting a wafer; A pressing unit for pressing the wafer support member; And a pressure providing unit for supplying pressure to the pressing unit, wherein the wafer support member is bonded to a base substrate at a predetermined width at an edge of the base substrate and has a rounded outermost support portion, and the support portion. It provides a wafer polishing unit comprising a coating layer provided on the edge.
  • the coating layer may be an epoxy coating layer.
  • the coating layer may include an epoxy and a polymer in a mass ratio of 2 to 1 to 4 to 1.
  • the coating layer may be provided with a thickness of 0.2 to 0.5 millimeters on the edge of the round processed support.
  • the coating layer may be provided wider than the round processed portion of the support.
  • the ratio of the width of the coating layer and the width of the round processed portion of the support may be 1.4 to 1 to 1.6 to 1.
  • the coating layer may be further provided with a thickness of 0.1 ⁇ 0.3 millimeters in the round unprocessed portion of the support.
  • Another embodiment may include stacking a support having a plurality of layers at an edge of a base substrate; Round processing the edges of the support; And coating a round machined portion of the support.
  • the coating step provides a method of manufacturing a wafer supporting member for applying and drying a material containing epoxy 2 and polymer 2 to 1 to 4 to 1.
  • the material may be first dried at 45 ° C. or higher, and then secondly dried at room temperature.
  • a material including an epoxy and a polymer may be applied to a thickness of 0.2 to 0.5 millimeters on the rounded portion of the support edge.
  • the coating material may be coated with a width of 1.4 times to 1.6 times the width of the round processed portion of the support.
  • a material including an epoxy and a polymer may be further applied to a thickness of 0.1 to 0.3 millimeters to the round unprocessed portion of the support.
  • the support at the edge of the wafer support member is rounded and a coating layer is formed so that the wafer does not exit the head being polished during the polishing process, and the frequency of scratches on the wafer surface is reduced.
  • 2 and 3 are views showing a polished wafer front surface
  • FIG. 4 is a view showing an embodiment of a wafer polishing unit
  • 5 to 8 is a view showing a manufacturing method of an embodiment of a wafer support member
  • FIG. 9 is a view showing the width and thickness of the coating layer formed in one embodiment of the wafer support member.
  • each layer, region, pattern, or structure is formed “on” or “under” of a substrate, each layer (film), region, pad, or pattern.
  • “on” and “under” include both “directly” or “indirectly” formed through another layer.
  • the criteria for the top or bottom of each layer will be described with reference to the drawings.
  • each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description.
  • the size of each component does not necessarily reflect the actual size.
  • FIG. 4 is a view showing a wafer polishing unit according to an embodiment.
  • a wafer polishing unit may act as a pressurizing head including a chamber 250, a pressure providing unit, a pressurizing unit, a wafer support member 200, and a fixing element 260.
  • the pressurization unit includes an expansion element 240, which may vary in thickness and selectively expand under pressure.
  • the chamber 250 forms a space defined by the backplate 270, the expansion element 240, and the fixed element 260. Pneumatic pressure provided from the pressure providing unit is supplied to the chamber 250, the volume of the chamber 250 may be changed by the supplied pressure.
  • the pressure providing unit consists of a pneumatic line 280 and a backplate 270.
  • the back plate 270 has a round cylindrical shape to correspond to the wafer.
  • the pneumatic line 280 may pass through the center of the back plate 270 and continue to the chamber 250 to transfer the pneumatic pressure to the chamber 250.
  • the pressing unit presses the wafer fixed in the wafer support member 200 by using the pneumatic pressure supplied to the chamber 250, and consists of an expansion element 240.
  • the expansion element 240 is made of a flexible material, it can be expanded by the pressure supplied to the chamber 250 through the pneumatic line 280.
  • the expansion element 240 may be made of rubber, and the edge of the expansion element 240 is fixed to the fixed element 260.
  • the expansion element 240 may be detrimental to the expansion of the edge portion, thus making the edge portion of the expansion element 240 thinner than the central portion.
  • the wafer support member 200 is in contact with the expansion element 240 and in contact with the wafer on the opposite side of the surface in contact with the expansion element 240.
  • the wafer support member 200 may pressurize the wafer by receiving the pressure of the expansion element 240.
  • the fixing element 260 is disposed around the back plate 270. In addition, since the fixing element 260 holds the edge portion of the expansion element 240, the expansion element 110 does not escape from the wafer polishing unit even when the expansion element 260 expands.
  • the pneumatic pressure in the chamber 250 may be kept constant.
  • FIGS. 5 to 8 are diagrams showing one embodiment of a method of manufacturing a wafer support member.
  • an embodiment of a method of manufacturing a wafer support member will be described with reference to FIGS. 5 to 8.
  • the base substrate 220 is prepared as shown in FIG. 5.
  • the base substrate 220 serves to support the wafer in a wafer polishing process to be described later.
  • an adhesive 223 may be formed on the first surface of the base substrate 220, to adhere the wafer support member to the polishing unit in a wafer polishing process to be described later.
  • Double-sided adhesive may be used as the adhesive 230.
  • the adhesive 223 is provided on one surface of the base substrate 220, and the wafer is placed on the other surface of the base substrate 220.
  • the base substrate 220 may be prepared in a disk shape because it is used to support a disk wafer.
  • the diameter of the base substrate 220 may be larger than that of the wafer to be polished.
  • the support 210 is stacked on the edge of the base substrate 220, and the support 210 may be made of epoxy glass or the like.
  • a plurality of layers 210a, 210b, 210c, and 210d may be stacked to obtain a sufficient thickness, and may be fixed on the base substrate 220 through an adhesive material 205.
  • an adhesive material 205 a hot melt sheet 205 may be used.
  • the support part 210 serves to guide and support the wafer so that the wafer does not escape from the head during polishing during the polishing process of the wafer. Therefore, the support 210 may be bonded to the outer circumference of the base substrate 220 with a predetermined width, and the inner radius of the support 210 should be large enough to place the wafer.
  • the edge of the support 210 is rounded as shown in FIG. 7. That is, as shown in the figure, the outer portion of the upper layer of the support layer 210 stacked on the base substrate 220 is smoothly processed in a round shape.
  • the outer portion means a direction opposite to a portion that can contact the wafer.
  • the outer portion of the upper layer of the support portion 210 is first polished by a method such as sand paper.
  • the support part 210 of the remaining parts except for the part to be processed may be protected by using a mask (not shown).
  • the part polished in the above-described primary polishing step is secondaryly polished by a method such as rubbing.
  • the surface of the support part 210 may be smoothly processed through the secondary polishing process.
  • residues on the surface of the support 210 are sufficiently removed through a cleaning process such as DIW cleaning.
  • a coating is performed on the rounded portion of the edge of the support 210. That is, after the first and second polishing, air cleaning, and DIW cleaning processes, impurities and etchings that may remain on the support 210 may be removed, and the polished rough portion may be softened to prevent damage to the polishing pad.
  • the coating layer 215 may be mainly coated on the uppermost layer of the plurality of supports 210.
  • the coating material should be applied to the round processed portion of the epoxy mixed in a constant ratio, and must be cured and dried under specific conditions. If not mixed in a predetermined ratio, the coating layer 215 may not be cured to a hardness of a predetermined level or more, and the coating layer 215 may flow down or bubbles depending on a drying method.
  • the coating process is described in detail as follows.
  • a coating material is prepared.
  • a material containing epoxy and polymer in a mass ratio of 10 to 3 is used.
  • Toyo's polymer was used in this example.
  • the above-described ratio of epoxy and polymer is sufficient as the above-described coating layer 215 material as long as the mass ratio of epoxy to polymer is in the range of 2 to 1 to 4 to 1.
  • the doped coating material is first dried at a temperature of 45 ° C. or higher, and secondly dried at room temperature. Firing is mainly performed in the primary drying process to remove organic matters in the coating material, and curing of the coating material may be performed in the secondary drying process.
  • drying at an excessively low temperature does not sufficiently cure the epoxy, and drying at an excessively high temperature may cause a short circuit of the adhesive material 205.
  • the above-described coating layer 215 is formed at the edge of the support 210, the width and thickness will be described below with reference to FIG.
  • the outer periphery of the upper layer of the support part 210 is rounded through the above-described polishing process.
  • the coating layer 215 may be laminated on the round processed portion of the support 210, and may be laminated to a thickness of 0.2 mm to 0.5 mm.
  • the coating layer 215 may be damaged during the polishing process of the wafer. If the thickness of the coating layer 215 is more than 0.5 millimeter, the pressure of the edge portion is uneven to polish the wafer. The heavy wafer may escape to the outside of the wafer support member.
  • the width W 2 of the coating layer 215 may be wider than the width W 1 of the round-processed portion of the support part 210. That is, to protect the entire rounded portion of the support 210, the coating layer 215 should be provided wider.
  • the width W 1 of the rounded part of the support part 210 is about 3.0 millimeters, and may be processed to a width within an error of 10%.
  • the ratio of the width (W 2) of the width (W 1) and the coating layer 215 of epoxy-glass processing is the round, may be on the order of 1 to 1.4 to 1 to 1.6.
  • the thickness of the coating layer 215 is thicker on the outside than the inside of the support 210, because the material such as epoxy applied before drying and curing can flow out.
  • FIG. 8 shows a template assembly which is an example of a wafer support member manufactured by the above-described process.
  • the first surface of the base substrate 220 is provided with an adhesive 223, the edge of the second surface is provided with a support 210 through an adhesive material 205, the edge of the support 210 is round
  • the coating layer 215 is formed.
  • the maximum thickness T 1 of the coating layer 215 is about 0.5 millimeter, and the thickness T 2 of the coating layer 215 laminated on the unprocessed portion of the support 210 is about 0.1 millimeter to It can be 0.3 millimeters.
  • the coating liquid may flow sideways.
  • the coating layer 215 completed by the above-described process has a surface hardness of 82D (Briel hardness tester) or more, and the surface hardness of the coating layer 215 is maintained until the completed wafer support member performs a wafer polishing process of 3000 pcs. For maintenance.
  • the wafer may be attached to the inside of the wafer support member, and the surface of the wafer may be mirror polished by applying pressure at the expansion element 240. That is, when the pneumatic pressure is supplied through the pneumatic line 280, since the pneumatic line 280 passes through the back plate 270 to the chamber 250, the pneumatic pressure supplied from the pneumatic line 280 is the chamber 250 Is injected into.
  • the expansion element 240 when the pressure in the chamber 250 rises, the expansion element 240 is separated from the back plate 270, and the expansion element 240 pressurizes the wafer support member 200.
  • the wafer support member 200 pressurizes the wafer, and the wafer is in close contact with a pad (not shown) to perform a polishing process, and the flatness of the wafer is improved through the polishing process.
  • the wafer support member 200 is rounded at the edge of the support 210, and a coating layer 215 is formed at the round portion. Therefore, the support 210 not only guides and supports the head during the polishing process in the polishing process but also removes the foreign matter due to the round processing and the epoxy coating, thereby reducing the occurrence of scratches on the wafer surface.
  • the defective rate of> 37 nanometer PID after the final work polishing was reduced to about 2%, which is the defect rate of the wafer support member without the conventional epoxy coating layer. That's less than 25%.
  • the wafer support member having the above-described structure can be applied not only to the final polishing process of the wafer but also to the carrier in the double-side polishing process of the wafer.
  • the wafer support member, the method of manufacturing the same, and the wafer polishing unit according to the embodiment can be used in a wafer polishing process.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention, selon un mode de réalisation, porte sur un élément de support de tranche, qui comprend : un substrat de base ; une unité de support qui est fixée jusqu'à une largeur prédéterminée sur un bord du substrat de base, et qui comporte une périphérie extérieure arrondie ; et une couche de revêtement formée sur un bord de l'unité de support.
PCT/KR2010/006755 2009-10-07 2010-10-04 Élément de support de tranche, procédé pour sa fabrication et unité de polissage de tranche le comprenant WO2011043567A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10822212.6A EP2472571A4 (fr) 2009-10-07 2010-10-04 Élément de support de tranche, procédé pour sa fabrication et unité de polissage de tranche le comprenant
JP2012533073A JP2013507764A (ja) 2009-10-07 2010-10-04 ウェーハ支持部材、その製造方法及びこれを備えるウェーハ研磨ユニット

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20090095195 2009-10-07
KR10-2009-0095195 2009-10-07
KR1020100091172A KR101160266B1 (ko) 2009-10-07 2010-09-16 웨이퍼 지지 부재, 그 제조방법 및 이를 포함하는 웨이퍼 연마 유닛
KR10-2010-0091172 2010-09-16

Publications (2)

Publication Number Publication Date
WO2011043567A2 true WO2011043567A2 (fr) 2011-04-14
WO2011043567A3 WO2011043567A3 (fr) 2011-09-01

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Country Link
US (1) US8574033B2 (fr)
EP (1) EP2472571A4 (fr)
JP (1) JP2013507764A (fr)
KR (1) KR101160266B1 (fr)
WO (1) WO2011043567A2 (fr)

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JP7081915B2 (ja) * 2017-10-16 2022-06-07 富士紡ホールディングス株式会社 研磨用保持具
KR102485810B1 (ko) * 2018-03-02 2023-01-09 주식회사 윌비에스엔티 화학적 기계적 연마 장치의 리테이너 링
KR102270392B1 (ko) * 2019-10-01 2021-06-30 에스케이실트론 주식회사 웨이퍼 연마 헤드, 웨이퍼 연마 헤드의 제조방법 및 그를 구비한 웨이퍼 연마 장치
KR102304948B1 (ko) * 2020-01-13 2021-09-24 (주)제이쓰리 반도체 웨이퍼 형상을 제어하는 웨이퍼 가공용 헤드 장치
CN115056045B (zh) * 2022-06-30 2023-10-20 成都泰美克晶体技术有限公司 一种晶圆单面抛光装置及方法

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Also Published As

Publication number Publication date
US20110081841A1 (en) 2011-04-07
EP2472571A4 (fr) 2015-07-01
JP2013507764A (ja) 2013-03-04
US8574033B2 (en) 2013-11-05
KR20110037848A (ko) 2011-04-13
EP2472571A2 (fr) 2012-07-04
WO2011043567A3 (fr) 2011-09-01
KR101160266B1 (ko) 2012-06-27

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