WO2013125747A1 - Procédé et appareil pour traiter le collage et le décollement d'une tranche de dispositif et d'une tranche de porteur de charge - Google Patents

Procédé et appareil pour traiter le collage et le décollement d'une tranche de dispositif et d'une tranche de porteur de charge Download PDF

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Publication number
WO2013125747A1
WO2013125747A1 PCT/KR2012/002031 KR2012002031W WO2013125747A1 WO 2013125747 A1 WO2013125747 A1 WO 2013125747A1 KR 2012002031 W KR2012002031 W KR 2012002031W WO 2013125747 A1 WO2013125747 A1 WO 2013125747A1
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WIPO (PCT)
Prior art keywords
wafer
adhesive layer
bonding
carrier
carrier wafer
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PCT/KR2012/002031
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English (en)
Korean (ko)
Inventor
배준호
김용섭
여원재
도선동
Original Assignee
코스텍 시스템(주)
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Publication of WO2013125747A1 publication Critical patent/WO2013125747A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Definitions

  • the present invention relates to a wafer processing method, and more particularly, to a method and apparatus for bonding and debonding a device wafer and a carrier wafer.
  • a 3D integrated circuit basically consists of a chip stack method, in which a plurality of chips cut from a wafer are vertically stacked to form a single device. At this time, the electrical connection between the chips is to penetrate a hole (vertical) perpendicular to each chip, this type of electrical connection is called TSV (Through Silicon Via).
  • each of the stacked chips has an electrical connection routed through a hole. Since the connection line routed through each hole penetrates vertically through the stacked chips, it is formed at the shortest distance between the stacked chips and from each chip to the printed board.
  • the thickness of one sheet of thin paper is about 50 ⁇ m, and preferably about 30 ⁇ m.
  • Wafers have reached a diameter of 12 inches (300mm). According to the announcement, the 450mm diameter wafer is expected to arrive soon.
  • Wafers need to be temporarily loaded into a stack cassette for a period of time during a multi-step process, and each step is transferred to each processing machine for each process.
  • the biggest difficulty is that cracks may occur on the surface or may be completely destroyed in a repetitive operation of gripping, transferring, and seating the wafer to perform a process.
  • a technique of temporarily bonding a device wafer to a carrier wafer to perform a semiconductor process and then debonding the carrier wafer to safely perform the semiconductor process and in-process transfer to the device wafer is disclosed.
  • the heat applied to the adhesive to separate the device wafer from the carrier wafer is conducted to the device wafer to increase the defect rate of the device wafer, which is a significant difference depending on the components of the adhesive, heating temperature, heating time, heating body Indicates.
  • An object of the present invention is to provide a processing method and apparatus for temporarily bonding a carrier wafer and a device wafer to perform a semiconductor process, and saving process time by separating the device wafer and the carrier wafer without damaging the device wafer. .
  • a method of processing a device wafer and a carrier wafer including a viewpoint forming step and a separation step of debonding the device wafer and the carrier wafer with the separation start point as a starting point.
  • the temporary bonding step may include forming a protective layer on a bonding surface of the device wafer and forming a weak adhesive layer by coating a weak adhesive having a relatively weak adhesive strength on the bonding surface of the carrier wafer. Forming a strong adhesive layer by coating a strong adhesive having a relatively strong adhesive strength relative to the weak adhesive on the outermost layer of the weak adhesive layer and forming a strong adhesive layer, and bonding the device wafer and the carrier wafer to each other. It can be provided.
  • a gap may be formed in at least a portion of the strongly adhesive layer by inserting the insert into the outermost portion of the adhesive layer.
  • the insert may be formed separately from the upper chuck detachably coupled to the top surface of the wafer assembly.
  • the insert can rotate to pass through the rigid adhesive layer.
  • by irradiating a laser on the strong adhesive layer may reduce the adhesion of at least a portion of the strong adhesive layer.
  • the laser may be irradiated from the side of the wafer assembly.
  • the carrier wafer may be made of a light transmissive material, and the laser may pass through the carrier wafer and be irradiated onto the strongly adhesive layer.
  • the laser may move relative to the wafer assembly in order to reduce the adhesive force of the entire outer circumference of the strongly adhesive layer.
  • the separation starting point forming step may reduce the adhesion of at least a portion of the strongly adhesive layer using a chemical.
  • the chemical may be injected from the side of the wafer assembly and injected into the strongly adhesive layer.
  • the chemical may be injected relative to the wafer assembly.
  • the separation initiation step may be performed by immersing the wafer assembly in the chemical.
  • the carrier wafer may be provided with at least one through hole formed at a position corresponding to the strong adhesive layer, and the chemical may flow into the strong adhesive layer through the through hole.
  • the strongly adhesive layer may be formed to a width of 3mm or less.
  • the temporary bonding step may include forming a first adhesive layer by coating a first adhesive on a bonding surface of the device wafer to form a first adhesive layer, and forming a second adhesive layer by coating a second adhesive on the bonding surface of the carrier wafer. And a second bonding layer forming step and a bonding step of bonding the device wafer and the carrier wafer to each other.
  • a gap may be formed in at least a portion between the first adhesive layer and the second adhesive layer by inserting the insert into the outermost portion of the adhesive layer.
  • the insert may be integrally formed with the upper chuck detachably coupled to the top surface of the wafer assembly.
  • the insert may be formed separately from the upper chuck detachably coupled to the top surface of the wafer assembly.
  • the insert may rotate to excess between the first adhesive layer and the second adhesive layer.
  • the outermost of the adhesive layer may be irradiated with a laser to reduce the adhesion of at least a portion of the adhesive layer.
  • the laser may be irradiated from the side of the wafer assembly.
  • the carrier wafer may be made of a light transmissive material, and the laser may be irradiated to the adhesive layer through the carrier wafer.
  • the laser may move relative to the wafer assembly.
  • the pressing member for pressing the upper chuck detachably coupled to the upper surface of the wafer assembly can move correspondingly as the device wafer and the carrier wafer are separated while going to the opposite side from the separation start point. .
  • the pressing member may be a rotating roller.
  • the lower chuck has a first coupling surface to which the dicing frame is coupled, and a second coupling surface to which the wafer assembly is coupled, and the second coupling surface protrudes with respect to the first coupling surface.
  • the difference between the first bonding surface and the second bonding surface may be sufficiently large so that the adhesive layer of the wafer assembly is positioned relatively higher than the dicing frame when the wafer assembly is fixed to the lower chuck.
  • the wafer assembly debonding apparatus may further include an upper chuck fixed to an upper surface of the wafer assembly.
  • the upper chuck may be a flexible material having elasticity.
  • the wafer assembly debonding apparatus may further include a pressing member movable from above to press the upper chuck.
  • the pressing member may be a rotating roller.
  • the pressing member may have a soft surface in contact with the upper chuck.
  • the object of the present invention described above can be achieved. Specifically, at least a portion of the outermost layer of the adhesive layer formed between the device wafer and the carrier wafer is deteriorated in adhesion strength by a physical external force such as an insert, an optical method such as a laser, or a chemical method such as a chemical agent, thereby providing a separation start point. As a result, it is possible to separate the device wafer from the carrier wafer without damaging the device wafer and to save processing time.
  • FIG. 1 is a flow chart illustrating a bonding and debonding processing method of a device wafer and a carrier wafer according to an embodiment of the present invention.
  • FIG. 2 is a plan view showing a carrier wafer coated with an adhesive, showing an adhesive coated surface.
  • FIG. 3 is a cross-sectional view showing the wafer assembly formed by the temporary bonding step shown in FIG.
  • FIG. 4 is a view showing a state in which the first embodiment of the separation start point forming step shown in FIG. 1 is performed.
  • FIG. 5 is an enlarged cross-sectional view of a portion of the wafer assembly illustrated in FIG. 4.
  • FIG. 6 is a diagram illustrating a state where a second embodiment of the separation start point forming step illustrated in FIG. 1 is performed.
  • FIG. 7 is a diagram illustrating a state where a third embodiment of the separation start point forming step illustrated in FIG. 1 is performed.
  • FIG. 8 and 9 are views illustrating a state in which an embodiment of the separation step illustrated in FIG. 1 is performed.
  • FIG. 10 is a diagram illustrating a state in which a fourth embodiment of the separation start point forming step illustrated in FIG. 1 is performed.
  • FIG. 11 is a diagram illustrating a state where a fifth embodiment of the separation start point forming step illustrated in FIG. 1 is performed.
  • FIG. 12 is an enlarged view illustrating a structure of a wafer assembly in which a sixth embodiment of the separation start point forming step illustrated in FIG. 1 is performed.
  • FIG. 13 is an enlarged view illustrating a structure of a wafer assembly in which a seventh embodiment of the separation start point forming step illustrated in FIG. 1 is performed.
  • FIGS. 14 and 15 are diagrams illustrating a configuration of a device wafer and a carrier wafer according to the exemplary embodiments illustrated in FIGS. 10 and 11, and an execution state of starting point forming steps, respectively.
  • 16 is a flowchart illustrating a bonding and debonding processing method of a device wafer and a carrier wafer according to another embodiment of the present invention.
  • 17 is a cross-sectional view showing the wafer assembly formed by the temporary bonding step shown in FIG.
  • a method of processing a device wafer and a carrier wafer includes a temporary bonding step S110, a separation start point forming step S120, and a separation step S130.
  • the temporary bonding step (S110) includes a protective film forming step (S111), a weakly bonding layer forming step (S112), a strong bonding layer forming step (S113), and a bonding step (S114).
  • the temporary bonding step S110 the device wafer and the carrier wafer are temporarily bonded by an adhesive to form a wafer bonded body.
  • a protective film having an adhesive force is formed on the bonding surface of the device wafer (the surface in contact with the carrier wafer during bonding).
  • the protective film is formed by coating the entire bonding surface of the device wafer using a coating apparatus such as a spin coater and then curing.
  • the weak adhesive layer is formed on the bonding surface of the carrier wafer (the surface in contact with the device wafer during bonding).
  • the weak adhesive layer is formed by coating the weak adhesive on the entire bonding surface of the carrier wafer using a coating apparatus such as a spin coater and then curing it.
  • the weak adhesive is defined as being a relatively weak adhesive strength compared to the strong adhesive described later.
  • the coating may be divided into three times or less according to the viscosity of the weak adhesive.
  • a strong adhesive layer is formed on the weak adhesive layer formed on the carrier wafer.
  • the hard adhesive layer is formed by coating the hard adhesive on the weak adhesive layer using a coating apparatus such as a spin coater and then curing.
  • the strong adhesive layer is formed around the outermost layer of the weak adhesive layer.
  • 2 illustrates a state in which a strong adhesive layer SB is formed on the weak adhesive layer WB.
  • the strong adhesive layer (SB) is formed to wrap around the outermost of the weak adhesive layer (WB) in a circular shape.
  • the width w of the strongly adhesive layer SB is preferably formed to be 3 mm or less.
  • the strong adhesive is defined as an adhesive having a relatively strong adhesive strength compared to the weak adhesive described above.
  • the device wafer and the carrier wafer are bonded to each other and then bonded to form a wafer bonded body.
  • 3 is a cross-sectional view of the wafer assembly formed by the temporary bonding step S110.
  • the wafer bonded body W includes a device wafer D / W, a carrier wafer C / W, and an adhesive layer B for bonding the two wafers D / W and C / W. do.
  • the adhesive layer B includes a protective layer PL formed on the device wafer D / W, a weak adhesive layer WB formed on the carrier wafer C / W and in contact with the protective layer PL, and a weak adhesive layer WB. It is formed on the outermost of the and has a strong adhesive layer (SB) in contact with the protective layer (PL). The portion where the strongly adhesive layer SB is formed is maintained in a strongly bonded state compared to the portion where the weak adhesive layer WB is formed.
  • the separation start point is formed in the adhesive layer B formed on the wafer assembly W.
  • the separation start point means a portion where the adhesive force is lowered or disappeared in an appropriate manner to facilitate separation at the outermost portion of the adhesive layer formed between the device wafer and the carrier wafer.
  • 4 shows a state in which the first embodiment of the separation start point forming step shown in FIG. 1 is performed.
  • the embodiment of the separation initiation point forming step shown in FIG. 4 is suitable when a gap (or groove) is generated by a physical external force, such as the force of the strong adhesive sticking.
  • the wafer assembly W is fixed to the lower chuck 110 in a state where the wafer assembly W is coupled to the dicing frame 120, and the insert 140 is disposed on the wafer assembly W.
  • the upper chuck 130 is installed integrally is located.
  • the dicing frame 120 has a generally thin ring shape, and a dicing tape 121 is coupled to one surface of the dicing frame 120 so as to block all the inner regions of the dicing frame 120.
  • the wafer assembly W is fixed to the dicing tape 121 so as to be located inside the dicing frame 120.
  • the dicing tape 121 is in contact with the device wafer D / W and fixes the wafer assembly W to the dicing frame 120.
  • An upper surface of the lower chuck 110 is formed with a first flat engaging surface 110a and a second flat engaging surface 110b positioned inside the first engaging surface 110a.
  • the first coupling surface 110a and the second coupling surface 110b fix the object placed thereon by using a method such as vacuum adsorption.
  • the first coupling surface 110a has a size such that the dicing frame 120 can be placed thereon.
  • the second coupling surface 110b protrudes from the first coupling surface 110a.
  • the second bonding surface 110b has a size such that the wafer assembly W can be placed thereon.
  • the dicing tape 121 is fixed to the first coupling surface 110a and the second coupling surface 110b of the lower chuck 110 in the same manner as vacuum suction.
  • the dicing frame 120 is positioned on the first coupling surface 110a, and the wafer assembly W is positioned on the second coupling surface 110b. Accordingly, the wafer assembly W is fixed to the lower chuck 110 together with the dicing frame 120.
  • the device wafer D / W is positioned on the lower chuck 110 side (below in the figure), and the carrier wafer C / W is positioned on the opposite side of the lower chuck 110 (on the figure).
  • the height difference h between the first coupling surface 110a and the second coupling surface 110b is set such that the wafer assembly W is sufficiently protruded to the outside with respect to the dicing frame 120 in order to increase workability. .
  • the upper chuck 130 is positioned above the wafer assembly W to face the carrier wafer C / W.
  • the upper chuck 130 is made of a material having elasticity that can be bent, and preferably has a relatively similar elasticity to the carrier wafer (C / W).
  • the upper chuck 130 is sized to cover the entire area of the carrier wafer C / W.
  • the insert 140 is integrally formed on the upper chuck 130.
  • the insert 140 is sharply formed at the edges, thereby stabbing the strong adhesive layer SB, thereby lowering the adhesive force of the strong adhesive layer SB.
  • the upper chuck 130 may linearly move in a direction parallel to the plane formed by the wafer assembly W. FIG.
  • the sharp edges of the insert 140 are spaced apart from the wafer assembly W.
  • the insert 140 installed on the upper chuck 130 moves toward the wafer assembly W, and as shown in FIG. 5, the insert ( 140 sticks a part of the strong adhesive layer SB to lower the adhesive force, and this part is formed as a separation start point.
  • the insert 140 is integrally formed on the upper chuck 130, the present invention is not limited thereto.
  • the insert 240 may be formed separately from the upper chuck 130.
  • the working gas may be supplied to the rigid adhesive layer through the position of the insert 240 by the gas injection nozzle 241. Air may be used as the working gas.
  • any one gas selected from the group consisting of nitrogen and helium or a mixed gas thereof may be used as the working gas.
  • the working gas may include a gas having a molecular weight smaller than that of the adhesive used for the adhesive layer. The working gas serves to lower the adhesive strength of the adhesive.
  • the insert 340 is rotated about the rotation axis 341 with respect to the wafer assembly (W) so that the sharp portion of the strong adhesive layer (SB) of the wafer assembly (W). You can also pass through part of.
  • FIG. 8 and 9 illustrate a state in which an embodiment of the separation step shown in FIG. 1 is performed.
  • a pressing member 150 made of a roller is positioned on the opposite side of the wafer assembly W with the upper chuck 130 therebetween.
  • the upper chuck 130 is coupled to the wafer assembly W in the same manner as vacuum suction.
  • the pressing member 150 preferably has a soft surface so as not to give a large impact to the wafer assembly W.
  • the pressing member 150 presses the upper chuck 130 on the side where the separation start point P is located. Thereafter, one end of the separation starting point P side of the upper chuck 130 is lifted by an external force while the pressing member 150 starts to move in the opposite direction. Accordingly, as shown in FIG.
  • the carrier wafer C / W is gradually separated from the device wafer D / W starting at the separation start point P.
  • the pressing member 150 reduces the force applied to the device wafer D / W by changing the bonding energy from the surface bonding energy to the preliminary bonding energy, so that the process is performed more quickly and stably.
  • the carrier wafer C / W and the device wafer D / W are separated using the upper chuck 130 and the pressing member 150, but the present invention is not limited thereto.
  • the present invention is not limited thereto.
  • Those skilled in the art will appreciate that it is possible to separate the carrier wafer C / W and the device wafer D / W from the wafer assembly W on which the separation start point P is formed without the upper chuck 130 and the pressing member 150. I can understand.
  • the separation initiation point forming step is described as being performed in a physical manner using an insert.
  • the separation initiation point forming step may be performed in an optical manner as in the fourth embodiment shown in FIG. 10.
  • the embodiment of the separation initiation point forming step shown in FIG. 10 is suitable when the strong adhesive is burned by the laser and the adhesive force is easily lowered.
  • the first laser irradiation apparatus 160a positioned at the side of the wafer assembly W may be used.
  • the irradiated laser is irradiated from the side surface of the wafer bonded body W to the strongly adhesive layer (SB in FIG. 3), and the laser irradiated from the second laser irradiation device 160b positioned above the wafer bonded body W is a carrier wafer ( C / W) and then irradiated with a strong adhesive layer (SB of FIG. 3).
  • the strong adhesive layer SB of FIG.
  • the second laser irradiation device 160b may move along the width direction of the strongly adhesive layer (SB of FIG. 3).
  • a laser may be irradiated to the whole strong bonding layer (SB of FIG. 3) by rotating along the center axis C of the wafer bonding body W.
  • the carrier wafer C / W is made of a light transmissive material such as glass so that the laser irradiated from the top can pass through the carrier wafer C / W.
  • FIG. 11 shows a state in which a fifth embodiment of the separation start point forming step shown in FIG. 1 is performed.
  • the embodiment of the separation initiation point forming step shown in FIG. 11 is a case of using a chemical method, and is suitable when the strong adhesive melts in response to a specific chemical and thus the adhesive force is easily lowered.
  • the chemical injected from the nozzle 170 positioned on the side of the wafer assembly W is provided. It sprays from the side surface of this wafer bonding body W to the strongly bonding layer (SB of FIG. 3).
  • the sprayed chemical causes the strong adhesive layer (SB in FIG. 3) to burn and lower the adhesive force, thereby forming a separation start point.
  • the wafer bonding body (W) can be applied to the strong adhesive layer (SB of FIG. 3) by rotating along the central axis (C).
  • the chemical is injected from the side of the wafer assembly W through the nozzle to be applied to the strong adhesive layer (SB of FIG. 3), but unlike the sixth embodiment of FIG.
  • the wafer assembly W may be separately immersed in the chemical A, and the chemical may be applied to the strong adhesive layer (SB of FIG. 3).
  • the carrier wafer C / W has a plurality of penetrations formed at positions corresponding to the strong adhesive layer so that the chemical agent A can be well applied to the strong adhesive layer (SB of FIG. 3).
  • the hole H may be provided.
  • 14 and 15 are diagrams illustrating a configuration of a device wafer and a carrier wafer according to the exemplary embodiments illustrated in FIGS. 10 and 11, and an execution state of starting point forming steps, respectively.
  • the protective layer P having an adhesive force is formed on the device wafer D / W
  • the weak adhesive layer WB is formed on the carrier wafer C / W.
  • a strong adhesive layer SB having a width within 3 mm is formed on the outside of the wafer C / W.
  • the strong adhesive layer SB formed on the bonded body W may be a laser irradiation device or a chemical spray nozzle 260.
  • the adhesive force is lowered using.
  • the laser and / or chemicals may affect the circumferential wide area (preferably the entire area) of the strongly adhesive layer SB.
  • a method of processing a device wafer and a carrier wafer includes a temporary bonding step S210, a separation start point forming step S220, and a separation step S130.
  • the temporary bonding step S210 includes a first adhesive layer forming step S211, a second adhesive layer forming step S212, and a bonding step S213.
  • the device wafer and the carrier wafer are temporarily bonded by an adhesive to form a wafer bonded body.
  • the first adhesive layer is formed on the bonding surface of the device wafer (a surface in contact with the carrier wafer during bonding).
  • the first adhesive layer is formed by coating the first adhesive on the entire bonding surface of the device wafer using a coating apparatus such as a spin coater and then curing it.
  • a second adhesive layer is formed on the bonding surface of the carrier wafer (the surface in contact with the device wafer during bonding).
  • the second adhesive layer is formed by coating and curing the second adhesive on the entire bonding surface of the carrier wafer using a coating apparatus such as a spin coater.
  • a coating apparatus such as a spin coater.
  • the coating may be divided into three times or less according to the viscosity of the second adhesive.
  • the device wafer and the carrier wafer are bonded together and then bonded to form a wafer bonded body.
  • 15 is a cross-sectional view of the wafer assembly formed by the temporary bonding step S210.
  • the wafer bonded body W includes a device wafer D / W, a carrier wafer C / W, and an adhesive layer B for bonding the two wafers D / W and C / W. do.
  • the adhesive layer B includes a first adhesive layer B1 formed on the device wafer D / W and a second adhesive layer B2 formed on the carrier wafer C / W.
  • separation start point forming step (S220) the method by the physical external force described above with reference to FIGS. 4 to 6 is used, or the optical method described above with reference to FIG.
  • a separation start point may be formed between (B1) and the second adhesive layer (B2).
  • the same method as the separation step S130 of the embodiment of FIG. 1 may be used. That is, a method of separating using the upper chuck and the pressing member described with reference to FIGS. 8 to 9 may be used, or a method of separating without using the pressing member may be used.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention concerne un procédé de traitement de tranche et, plus particulièrement, un procédé pour traiter une tranche de dispositif et une tranche de porteur de charge et d'un appareil à décoller. Selon la présente invention, on propose un procédé pour traiter une tranche de dispositif et une tranche de porteur de charge, le procédé comprenant : une étape de collage temporaire où l'on colle temporairement la tranche de dispositif et la tranche de porteur de charge pour constituer un substrat composite ; une étape constituant le point de départ de la séparation consistant à dégrader la force de liaison d'au moins une partie de la périphérie la plus extérieure de la couche de liaison formée entre la tranche de dispositif et la tranche de porteur de charge de façon à constituer un point de départ de séparation ; et une étape de séparation consistant à décoller la tranche de dispositif et la tranche de porteur de charge à partir du point de départ de la séparation.
PCT/KR2012/002031 2012-02-20 2012-03-21 Procédé et appareil pour traiter le collage et le décollement d'une tranche de dispositif et d'une tranche de porteur de charge WO2013125747A1 (fr)

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KR10-2012-0017102 2012-02-20
KR1020120017102A KR101223633B1 (ko) 2012-02-20 2012-02-20 디바이스 웨이퍼와 캐리어 웨이퍼의 본딩과 디본딩 처리방법

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KR102305505B1 (ko) * 2014-09-29 2021-09-24 삼성전자주식회사 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법

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