WO2011027537A1 - Scintillator material - Google Patents

Scintillator material Download PDF

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Publication number
WO2011027537A1
WO2011027537A1 PCT/JP2010/005345 JP2010005345W WO2011027537A1 WO 2011027537 A1 WO2011027537 A1 WO 2011027537A1 JP 2010005345 W JP2010005345 W JP 2010005345W WO 2011027537 A1 WO2011027537 A1 WO 2011027537A1
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csi
emission
composition
emission peak
wavelength
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French (fr)
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Yoshihiro Ohashi
Nobuhiro Yasui
Toru Den
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Canon Inc
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Canon Inc
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Priority to US13/393,133 priority Critical patent/US8506845B2/en
Priority to CN201080038773.9A priority patent/CN102575160B/zh
Publication of WO2011027537A1 publication Critical patent/WO2011027537A1/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/626—Halogenides
    • C09K11/628—Halogenides with alkali or alkaline earth metals

Definitions

  • the present invention relates to a scintillator material.
  • the present invention relates to a scintillator material that converts radiation into visible light.
  • a known image detector for radiation diagnosis is a radiation detector that detects radiated X-rays to acquire an X-ray image as digital signals.
  • Such radiation detectors are broadly divided into direct X-ray detectors and indirect X-ray detectors.
  • the indirect X-ray detectors are detectors in which X-rays are changed into visible light with a phosphor, and the visible light is converted into charge signals with a photoelectric conversion element such as an amorphous silicon (a-Si) photodiode or a charge coupled device (CCD) to acquire an image.
  • a-Si amorphous silicon
  • CCD charge coupled device
  • amorphous silicon a-Si
  • a-Si amorphous silicon
  • CsI:Tl cesium iodide:thallium
  • CsI cesium iodide:thallium
  • the emission peak wavelength of CsI:Tl varies in the wavelength band of about 540 to 565 nm depending on the concentration of thallium (Tl) added.
  • Fig. 5A shows a change in the emission spectrum of a CsI:Tl scintillator material when the concentration of thallium (Tl) added was changed.
  • Tl is added to CsI in a low concentration (0.010 mole percent)
  • the scintillator material exhibits an emission peak at about 540 nm.
  • the scintillator material when Tl is added to CsI in a high concentration (1.0 mole percent), the scintillator material exhibits an emission peak at about 565 nm (refer to Fig. 5A).
  • the emission wavelength of CsI:Tl can be shifted to the long-wavelength side by adding Tl, which functions as a luminescence center, in a high concentration, whereby the emission wavelength can be made to coincide with the photosensitivity of a-Si.
  • CsI:In A scintillator material (CsI:In) formed by adding indium (In) as a luminescence center to cesium iodide (CsI) also functions as a scintillator similarly to CsI:Tl.
  • CsI:In-based materials conducted by the inventors of the present invention, the following became clear: In the cases where indium (In) was added to cesium iodide (CsI) in a low concentration (0.010 mol%) and a high concentration (1.0 mol%), the emission spectrum did not change, and these materials exhibited certain light emission at a wavelength of about 544 nm (refer to Fig. 5B).
  • Fig. 5B shows the change in the emission spectrum between the CsI:In scintillator materials when the concentration of indium (In) added was changed.
  • the inventors of the present invention found the following new problem: Unlike in the case of CsI:Tl, the emission wavelength of CsI:In cannot be shifted to the long-wavelength side by the technique in which the concentration of the luminescence center added is increased. Accordingly, the light emission cannot be adjusted to a wavelength range where detection sensitivity of a-Si is high.
  • the present invention provides a scintillator material containing a CsI:In-based material that exhibits light emission in a wavelength range where photosensitivity of a-Si is high.
  • a scintillator material according to the present invention contains a compound represented by a general formula [Cs 1-z Rb z ][I 1-x-y Br x Cl y ]:In.
  • x, y, and z satisfy any one of conditions (1), (2), and (3) below.
  • a scintillator material containing a CsI:In-based scintillator material that exhibits light emission in a wavelength range where photosensitivity of a-Si is high can be provided.
  • Fig. 1 is a graph showing the relationship between the amount of Cl or Br added and the emission peak wavelength in scintillator materials of Examples 1 and 2 of the present invention.
  • Fig. 2 is a graph showing the relationship between the emission spectrum of a scintillator material of Example 1 of the present invention and sensor detection sensitivity.
  • Fig. 3 is a graph showing the relationship between the emission spectrum of a scintillator material of Example 2 of the present invention and sensor detection sensitivity.
  • Fig. 4 is a graph showing the relationship between the emission spectrum of a scintillator material of Example 3 of the present invention and sensor detection sensitivity.
  • Fig. 5A is a graph showing a change in the emission spectrum between existing scintillator materials of CsI:Tl.
  • Fig. 1 is a graph showing the relationship between the amount of Cl or Br added and the emission peak wavelength in scintillator materials of Examples 1 and 2 of the present invention.
  • Fig. 2 is a graph showing the relationship between the emission spectrum of
  • Fig. 5B is a graph showing a change in the emission spectrum between existing scintillator materials of CsI:In.
  • Fig. 6 is a graph showing the relationship between the amount of Rb, RbBr, or RbCl added and the emission peak wavelength in scintillator materials of Examples 4, 5, and 6 of the present invention.
  • Fig. 7 is a graph showing the relationship between the emission spectrum of a scintillator material of Example 4 of the present invention and sensor detection sensitivity.
  • Fig. 8 is a graph showing the relationship between the emission spectrum of a scintillator material of Example 5 of the present invention and sensor detection sensitivity.
  • Fig. 9 is a graph showing the relationship between the emission spectrum of a scintillator material of Example 6 of the present invention and sensor detection sensitivity.
  • a feature of the present invention lies in that, in CsI:In, the emission wavelength is shifted to the long-wavelength side by replacing the I site of CsI, which is a parent material, with bromine (Br) or chlorine (Cl), which is a different halogen element, by replacing the Cs site of CsI with rubidium (Rb), which is a different alkali element, or by replacing both the I site and the Cs site with a different halogen element and a different alkali element, respectively, to obtain a scintillator material that exhibits light emission corresponding to a wavelength range where detection sensitivity of a-Si is high.
  • wavelengths described below are not absolute values, and the values of the wavelength may vary depending on a measuring device or a calibration method. Therefore, in the present invention, a relative difference in wavelength between compositions is important, and the present invention does not specify absolute values of the wavelengths.
  • a feature of a first embodiment lies in that, in CsI:In, the emission wavelength is shifted to the long-wavelength side by replacing the I site of CsI, which is a parent material, with Br or Cl, which is a different halogen element, to obtain a scintillator material that exhibits light emission corresponding to a wavelength range where detection sensitivity of a-Si is high.
  • the scintillator material of this embodiment contains a compound represented by a general formula Cs[I 1-x-y Br x Cl y ]:In.
  • the relationship 0 ⁇ x + y ⁇ 1 is satisfied, and at least one of Mathematical formula 4 and Mathematical formula 5 is satisfied.
  • the content of indium (In) is 0.00010 mole percent or more and 1.0 mole percent or less relative to Cs[I 1-x-y Br x Cl y ].
  • the scintillator material of this embodiment contains a compound represented by a general formula Cs[I 1-x-y Br x Cl y ]:In, in which the relationship 0 ⁇ x + y ⁇ 1 is satisfied, at least one of Mathematical formula 6 and Mathematical formula 7 is satisfied, and the content of indium (In) is 0.00010 mole percent or more and 1.0 mole percent or less relative to Cs[I 1-x-y Br x Cl y ].
  • the composition of the parent material of the scintillator material is configured to contain a certain amount of CsCl or CsBr in addition to CsI, the scintillator material exhibits light emission at the long-wavelength side relative to light emission of CsI:In. The detail thereof will be described below.
  • Fig. 1 is a graph showing the relationship between the amount of Cl or Br added and the emission peak wavelength in a scintillator material represented by CsI 1-x Br x :In or CsI 1-y Cl y :In.
  • a composition range is present in which emission of yellow light having an emission peak at the longer-wavelength side with respect to 544 nm, which is the emission peak of CsI:In, occurs.
  • the composition range in which an emission peak is observed at the longer-wavelength side with respect to at least 544 nm, which is the emission peak of CsI:In is in the ranges of Mathematical formula 8 and Mathematical formula 9.
  • a composition range in which the emission peak wavelength is shifted to the longer-wavelength side with respect to the emission peak wavelength of CsI:In by 10 nm or more is in the ranges of Mathematical formula 10 and Mathematical formula 11.
  • a-Si amorphous silicon
  • polymer materials are used as, for example, a substrate and a sealing member that constitute a device, and these members absorb some of light components having short wavelengths of about 450 nm or less. Therefore, in the emission of light from a scintillator, some of light components of about 450 nm are absorbed and do not reach the a-Si sensor.
  • a wavelength at which optical absorption occurs is avoided by shifting the light emission to the long-wavelength side, and thus a large amount of light can be made to reach the a-Si sensor as compared with the case of CsI:In.
  • a scintillator material of the present invention which is represented by a general formula CsI 1-x-y Br x Cl y :In, CsI 1-x Br x :In, or CsI 1-y Cl y :In in which x and y satisfy the relationship 0 ⁇ x + y ⁇ 1, and x and y satisfy at least one of Mathematical formula 12 and Mathematical formula 13, the output can be improved compared with the case of CsI:In.
  • the content of indium (In) contained in the scintillator material of the present invention, the scintillator material containing a compound represented by the general formula CsI 1-x-y Br x Cl y :In, is 0.00010 mole percent or more and 1.0 mole percent or less relative to CsI 1-x-y Br x Cl y .
  • the content of indium (In) contained in the scintillator material of the present invention, the scintillator material containing a compound represented by the general formula CsI 1-x Br x :In, is 0.00010 mole percent or more and 1.0 mole percent or less relative to CsI 1-x Br x .
  • the content of indium (In) contained in the scintillator material of the present invention is 0.00010 mole percent or more and 1.0 mole percent or less relative to CsI 1-y Cl y .
  • the scintillator material of this embodiment can be produced by adding a certain amount of CsCl and/or CsBr to CsI, further adding a certain amount of indium iodide (InI), mixing these compounds, and heating the resulting sample at 620 degrees Celsius or higher.
  • a feature of a second embodiment lies in that, in CsI:In, the emission wavelength is shifted to the long-wavelength side by replacing the Cs site of CsI, which is a parent material, with Rb, which is a different alkali element, to obtain a scintillator material that exhibits light emission corresponding to a wavelength range where detection sensitivity of a-Si is high.
  • the second embodiment differs from the first embodiment in that the Cs site of CsI is replaced with Rb, which is a different alkali element, in the second embodiment whereas only the I site of CsI is replaced with Br or Cl, which is a different halogen element, in the first embodiment. Furthermore, the second embodiment differs from the first embodiment in that the I site and the Cs site are replaced with different halogen element and alkali element, respectively.
  • a scintillator material of this embodiment contains a compound represented by a general formula [Cs 1-z Rb z ][I 1-x-y Br x Cl y ]:In.
  • x, y, and z satisfy any one of conditions (1), (2), and (3) below.
  • Mathematical formula 16 and 0 ⁇ y ⁇ 1 is satisfied.
  • the composition of the parent material of the scintillator material is configured to contain a certain amount of RbI, RbBr, or RbCl in addition to CsI, the scintillator material exhibits light emission at the long-wavelength side relative to light emission of CsI:In. The detail thereof will be described below.
  • Fig. 6 is a graph showing the relationship between the amount of Rb, RbBr, or RbCl added and the emission peak wavelength in a scintillator material represented by Cs 1-z Rb z I:In, (CsI) 1-a (RbBr) a :In, or (CsI) 1-b (RbCl) b :In.
  • a scintillator material represented by Cs 1-z Rb z I:In, (CsI) 1-a (RbBr) a :In, or (CsI) 1-b (RbCl) b :In.
  • a composition range is present in which emission of orange light having an emission peak at the longer-wavelength side with respect to 544 nm, which is the emission peak of CsI:In, occurs.
  • the composition range in which an emission peak is observed at the longer-wavelength side with respect to at least 544 nm, which is the emission peak of CsI:In is in the range of 0 ⁇ z ⁇ 1.
  • composition range in which the emission peak wavelength is shifted to the longer-wavelength side with respect to the emission peak wavelength of CsI:In by 10 nm or more is in the range of Mathematical formula 22.
  • the composition that achieves the maximum emission wavelength shift is Cs 0.7 Rb 0.3 I, and the emission wavelength thereof is 584 nm.
  • the replacement of Cs (atomic number 55) with Rb (atomic number 37) decreases the stopping power for X-rays, and thus the amount of replacement with Rb is preferably a half or less of the amount of Cs.
  • the composition range that achieves a wavelength shift of 10 nm or more is preferably determined in the range of Mathematical formula 24.
  • a scintillator material that contains a compound represented by a general formula (CsI) 1-a (RbBr) a :In, in which a satisfies Mathematical formula 25, and the content of indium (In) is 0.00010 mole percent or more and 1.0 mole percent or less relative to (CsI) 1-a (RbBr) a .
  • composition range (0 ⁇ a ⁇ 1) between the end compositions does not monotonically change between the emission peaks at both the ends. More specifically, a composition range is present in which emission of yellow light having an emission peak at the longer-wavelength side with respect to 544 nm, which is the emission peak of CsI:In, occurs.
  • the composition range in which an emission peak is observed at the longer-wavelength side with respect to at least 544 nm, which is the emission peak of CsI:In is in the range of Mathematical formula 26.
  • composition range in which the emission peak wavelength is shifted to the longer-wavelength side with respect to the emission peak wavelength of CsI:In by 10 nm or more is in the range of Mathematical formula 27.
  • the composition that achieves the maximum emission wavelength shift is (CsI) 0.9 (RbBr) 0.1 , and the emission wavelength thereof is 559 nm.
  • a scintillator material that contains a compound represented by a general formula (CsI) 1-b (RbCl) b :In, in which b satisfies 0 ⁇ b ⁇ 1, and the content of indium (In) is 0.00010 mole percent or more and 1.0 mole percent or less relative to (CsI) 1-b (RbCl) b .
  • the composition range in which an emission peak is observed at the longer-wavelength side with respect to at least 544 nm, which is the emission peak of CsI:In is in the range of 0 ⁇ b ⁇ 1. Furthermore, in a range of b ⁇ 0.7, in which emission of light having a short wavelength caused by the separation of the emission peak is not observed, a composition range in which the emission peak wavelength is shifted to the longer-wavelength side with respect to the emission peak wavelength of CsI:In by 10 nm or more is in the range of Mathematical formula 29.
  • the composition that achieves the maximum emission wavelength shift is (CsI) 0.7 (RbCl) 0.3 , and the emission wavelength thereof is 556 nm.
  • a scintillator material of the present invention which is represented by a general formula [Cs 1-z Rb z ][I 1-x-y Br x Cl y ]:In, wherein when 0 ⁇ x + y ⁇ 1 and 0 ⁇ z ⁇ 1, at least one of Mathematical formula 30 and 0 ⁇ y ⁇ 1 is satisfied, the output can be improved compared with the case of CsI:In.
  • the content of indium (In) is 0.00010 mole percent or more and 1.0 mole percent or less relative to [Cs 1-z Rb z ][I 1-x-y Br x Cl y ].
  • the scintillator material of this embodiment can be produced by adding a certain amount of RbI and/or RbBr and/or RbCl to CsI, further adding a certain amount of InI, mixing these compounds, and heating the resulting sample at 620 degrees Celsius or higher.
  • This Example corresponds to the first embodiment.
  • CsI cesium iodide
  • CsBr cesium bromide
  • composition range in which an emission peak was observed at the longer-wavelength side with respect to at least 544 nm, which was the emission peak of CsI:In was in the range of Mathematical formula 31. Furthermore, a composition range in which the emission peak wavelength was shifted to the longer-wavelength side with respect to the emission peak wavelength of CsI:In by 10 nm or more was in the range of Mathematical formula 32.
  • the emission spectrum of CsI:In is also shown in Fig. 2.
  • a sensitivity curve of amorphous silicon (a-Si) is also shown in Fig. 2.
  • An a-Si sensor also has sensitivity in a wavelength range of 450 nm or less, however, in actual devices, some of light components of about 450 nm or less are absorbed by polymer members.
  • the composition of the parent material was configured to contain CsBr in addition to CsI, the emission wavelength of CsI:In was shifted to the long-wavelength side.
  • a scintillator material that exhibited light emission in the wavelength range where detection sensitivity of a-Si was high could be prepared.
  • This Example corresponds to the first embodiment.
  • CsI cesium iodide
  • CsCl cesium chloride
  • the emission spectrum of CsI:In is also shown in Fig. 3.
  • a sensitivity curve of a-Si is also shown in Fig. 3.
  • An a-Si sensor also has sensitivity in a wavelength range of 450 nm or less, however, in actual devices, some of light components of about 450 nm or less are absorbed by polymer members.
  • the composition of the parent material was configured to contain CsCl in addition to CsI, the emission wavelength of CsI:In was shifted to the long-wavelength side.
  • a scintillator material that exhibited light emission in the wavelength range where detection sensitivity of a-Si was high could be prepared.
  • This Example corresponds to the first embodiment.
  • CsI cesium iodide
  • CsBr cesium bromide
  • CsCl cesium chloride
  • the emission spectrum of the prepared sample was measured. The result is shown in Fig. 4.
  • the emission spectrum of CsI:In is also shown in Fig. 4.
  • a sensitivity curve of a-Si is also shown in Fig. 4.
  • the emission peak of the sample was 560 nm, and was shifted to the longer-wavelength side by about 15 nm with respect to the emission peak of CsI:In.
  • the composition of the parent material was configured to contain CsBr and CsCl in addition to CsI, the emission wavelength of CsI:In was shifted to the long-wavelength side.
  • a scintillator material that exhibited light emission in the wavelength range where detection sensitivity of a-Si was high could be prepared.
  • This Example corresponds to the second embodiment.
  • CsI cesium iodide
  • RbI rubidium iodide
  • CsI 1-z Rb z I:In cesium iodide
  • InI was added to each of the samples so that the indium (In) concentration was 0.01 mole percent relative to CsI 1-Z Rb z I, and mixed.
  • the resulting samples were melted at 650 degrees Celsius for five minutes to prepare 13 samples, the compositions of which continuously changed from one to another.
  • composition range in which an emission peak was observed at the longer-wavelength side with respect to 567 nm, which was the emission peak of RbI:In was present.
  • the composition range in which an emission peak was observed at the longer-wavelength side with respect to at least 544 nm, which was the emission peak of CsI:In was in the range of 0 ⁇ z ⁇ 1.
  • a composition range in which the emission peak wavelength was shifted to the longer-wavelength side with respect to the emission peak wavelength of CsI:In by 10 nm or more was in the range of Mathematical formula 36.
  • the replacement of Cs (atomic number 55) with Rb (atomic number 37) decreases the stopping power for X-rays, and thus the amount of replacement with Rb is preferably a half or less of the amount of Cs. Accordingly, considering that the decrease in the stopping power for X-rays can be suppressed in a range of Mathematical formula 37, the composition range that achieves a wavelength shift of 10 nm or more is preferably determined in the range of Mathematical formula 38.
  • the emission spectrum of CsI:In is also shown in Fig. 7.
  • a sensitivity curve of a-Si is also shown in Fig. 7.
  • the composition of the parent material was configured to contain RbI in addition to CsI by replacing Cs with Rb, the emission wavelength of CsI:In was shifted to the long-wavelength side.
  • a scintillator material that exhibited light emission in the wavelength range where detection sensitivity of a-Si was high could be prepared.
  • This Example corresponds to the second embodiment.
  • a scintillator material was prepared in which Cs is replaced with Rb and I is replaced with Br in a general formula [Cs 1-z Rb z ][I 1-x-y Br x Cl y ]:In, thus replacing both an alkali element and a halogen element.
  • scintillator materials in which the amount of replacement of the alkali element is the same as the amount replacement of the halogen element i.e., scintillator materials represented by (CsI) 1-a (RbBr) a :In were prepared.
  • CsI cesium iodide
  • RbBr rubidium bromide
  • InI was added to each of the samples so that the indium (In) concentration was 0.01 mole percent relative to (CsI) 1-a (RbBr) a , and mixed.
  • the resulting samples were melted at 650 degrees Celsius for five minutes to prepare 13 samples, the compositions of which continuously changed from one to another.
  • the emission spectrum of CsI:In is also shown in Fig. 8.
  • a sensitivity curve of a-Si is also shown in Fig. 8.
  • the composition of the parent material was configured to contain RbBr in addition to CsI by replacing Cs with Rb and replacing I with Br, the emission wavelength of CsI:In was shifted to the long-wavelength side.
  • a scintillator material that exhibited light emission in the wavelength range where detection sensitivity of a-Si was high could be prepared.
  • This Example corresponds to the second embodiment.
  • a scintillator material was prepared in which Cs is replaced with Rb and I is replaced with Cl in the general formula [Cs 1-z Rb z ][I 1-x-y Br x Cl y ]:In, thus replacing both an alkali element and a halogen element.
  • scintillator materials in which the amount of replacement of the alkali element is the same as the amount replacement of the halogen element i.e., scintillator materials represented by (CsI) 1-b (RbCl) b :In were prepared.
  • CsI cesium iodide
  • RbCl rubidium chloride
  • the emission spectrum of CsI:In is also shown in Fig. 9.
  • a sensitivity curve of a-Si is also shown in Fig. 9.
  • the composition of the parent material was configured to contain RbCl in addition to CsI by replacing Cs with Rb and replacing I with Cl, the emission wavelength of CsI:In was shifted to the long-wavelength side.
  • a scintillator material that exhibited light emission in the wavelength range where detection sensitivity of a-Si was high could be prepared.

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  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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US20120161074A1 (en) 2012-06-28
JP2011074352A (ja) 2011-04-14

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