WO2011018912A1 - Appareil à plasma de dépôt en phase vapeur (cvd), électrode à plasma, et procédé de fabrication d'un film semi-conducteur - Google Patents

Appareil à plasma de dépôt en phase vapeur (cvd), électrode à plasma, et procédé de fabrication d'un film semi-conducteur Download PDF

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Publication number
WO2011018912A1
WO2011018912A1 PCT/JP2010/057383 JP2010057383W WO2011018912A1 WO 2011018912 A1 WO2011018912 A1 WO 2011018912A1 JP 2010057383 W JP2010057383 W JP 2010057383W WO 2011018912 A1 WO2011018912 A1 WO 2011018912A1
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Prior art keywords
gas
plasma
shower plate
main electrode
heat transfer
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PCT/JP2010/057383
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English (en)
Japanese (ja)
Inventor
正和 滝
睦 津田
賢治 新谷
謙 今村
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to CN201080035372.8A priority Critical patent/CN102473612B/zh
Priority to JP2011526696A priority patent/JP5398837B2/ja
Priority to DE112010003248.3T priority patent/DE112010003248B4/de
Publication of WO2011018912A1 publication Critical patent/WO2011018912A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Definitions

  • the present invention relates to a plasma CVD (Chemical Vapor Deposition) apparatus used for forming a thin film or the like, a plasma electrode, and a semiconductor film manufacturing method using the apparatus.
  • a plasma CVD Chemical Vapor Deposition
  • the plasma CVD apparatus is widely used as an apparatus for forming a thin film such as an amorphous silicon thin film or a microcrystalline silicon thin film on a substrate.
  • a plasma CVD apparatus capable of forming a thin film having a large area such as a silicon thin film used for a power generation layer of a thin film silicon solar cell at a high speed at a time has been developed.
  • Patent Document 1 a gas blowing face plate in which a plurality of gas blowing holes for blowing out a reactive gas and a plurality of plasma promoting holes for promoting the generation of plasma are formed in a plasma electrode (counter electrode).
  • a plasma CVD apparatus that can form a thin film having a large area at high speed is described.
  • the plurality of plasma promotion holes are formed on the surface of the gas blowing face plate facing the substrate without penetrating the gas blowing face plate.
  • a so-called “high pressure depletion method” is known as a method capable of forming a thin film having a large area at a higher speed than the film formation by the plasma CVD apparatus described in Patent Document 1.
  • This high pressure depletion method is one of the plasma CVD methods, and a film forming chamber (vacuum container) is formed by a plasma CVD apparatus in which a distance between a stage portion on which a film forming substrate is placed and a plasma electrode is narrowed to about 10 mm. Film formation is performed by generating plasma in a high-frequency electric field while keeping the inside at high pressure and depleting (insufficient) the source gas.
  • a large plasma electrode is used regardless of the structure of the plasma CVD apparatus used and the film formation principle. Since the plasma electrode receives a heat input from the plasma at the time of film formation and rises in temperature, the larger the plasma electrode, the larger the amount of thermal deformation at the time of film formation. For example, when the temperature of a plasma electrode having a size of 1 m square when viewed in plan from the film formation substrate side is increased by 20 ° C. due to heat input from the plasma, the plasma electrode generally has 0 in the vertical and horizontal directions, respectively. .Expands about 4 mm.
  • the plasma electrode swells up to about 10 mm toward the stage part, and the distance between the plasma electrode and the stage part greatly deviates from the set value, resulting in process characteristics during film formation. Adversely affected.
  • a gas diffusion space is formed by an upper plate in which process gas introduction holes are formed and a lower plate in which a plurality of gas passage holes are formed. If an intermediate plate with holes is provided in the gas diffusion space and a plurality of heat transfer members are provided between the intermediate plate and the upper plate and between the lower plate and the intermediate plate, the plasma is transferred from the plasma to the lower plate. Since the conducted heat is sequentially conducted to the heat transfer member, the intermediate plate, the heat transfer member, and the upper plate and is dissipated to the outside from the upper plate, it is easy to suppress thermal deformation of the plasma electrode.
  • the present invention has been made in view of the above circumstances, and an object thereof is to obtain a plasma CVD apparatus, a plasma electrode, and a method for manufacturing a semiconductor film, which facilitate the stable deposition of a large-area thin film at a high speed. To do.
  • the plasma CVD apparatus includes a film formation chamber, a stage portion for mounting a film formation substrate disposed in the film formation chamber, and a plasma electrode disposed in the film formation chamber so as to face the stage portion.
  • the plasma electrode includes a main electrode portion provided with a process gas introduction hole and a plurality of gas discharge holes for discharging process gas to the stage portion side.
  • a gas shower plate part that is attached to the stage part side and forms a gas diffusion space between the main electrode part, a plurality of gas flow holes for the process gas to circulate, and a gas shower plate part, A gas diffusion plate disposed in the gas diffusion space so as to oppose each other, and a plurality of transmission lines disposed in the gas diffusion space and thermally connecting the gas shower plate portion and the main electrode portion through the gas flow holes.
  • thermal pillar A wherein the air gap is formed between the peripheral surface of the heat transfer pillar portion through an inner wall and the gas flow hole of the gas flow holes.
  • the heat transfer pillar portion is passed through the gas flow hole formed in the gas diffusion plate, the diameter of the heat transfer pillar portion is increased or the heat transfer pillar portion is maintained while maintaining the uniformity of the generated plasma. It is easy to increase the number of As a result, it becomes easy to enhance the cooling performance of the plasma electrode and suppress its thermal deformation, and it becomes easy to form a large-area thin film stably at high speed.
  • FIG. 1 is a cross sectional view schematically showing Embodiment 1 of the plasma CVD apparatus of the present invention.
  • FIG. 2 is an enlarged view of a part of the plasma electrode in FIG.
  • FIG. 3 is a cross-sectional view schematically showing a plasma electrode (shower head) of Patent Document 2.
  • FIG. 4 is a sectional view showing a part of a schematic configuration of Embodiment 3 of the plasma electrode according to the present invention.
  • FIG. 5 is an enlarged cross-sectional view showing a part of the plasma electrode of FIG. 6 is an exploded cross-sectional view of the plasma electrode of FIG.
  • FIG. 7 is a cross-sectional view showing a part of a schematic configuration of Embodiment 4 of the plasma electrode according to the present invention.
  • FIG. 1 is a sectional view schematically showing Embodiment 1 of the plasma CVD apparatus of the present invention
  • FIG. 2 is an enlarged view of a part of the plasma electrode in FIG.
  • a plasma CVD apparatus 40 shown in FIG. 1 is a horizontal apparatus including a film forming chamber 10, a stage unit 20 and a plasma electrode 30 disposed in the film forming chamber 10.
  • the process gas discharged to the side is turned into plasma by a high-frequency electric field formed between the plasma electrode 30 and the stage unit 20, and a thin film is formed on the film formation substrate 50 such as a glass substrate placed on the stage unit 20. To do.
  • the film forming chamber 10 includes a top plate portion 1 in which a first process gas introduction hole 1 a for introducing a process gas into the film forming chamber 10 is formed, and the top plate portion.
  • 1 is a hollow body 5 disposed on the lower surface side of the body 1 via a high-frequency insulating member 3, a bottom plate 7 that closes the lower end side of the body 5, and the body 5 attached to the outer periphery of the body 5.
  • 5 is a box-like body having a tubular exhaust pipe connecting portion 9 provided with an exhaust port 9a communicating with the five exhaust ports 5a.
  • a shield member is disposed around the top plate portion 1 so that a high frequency applied to the top plate portion 1 does not leak to the outside.
  • the stage unit 20 is provided on the bottom plate unit 7, and at the time of film formation, the deposition target substrate 50 is placed on the stage unit 20 and the stage unit 20 is grounded.
  • the plasma electrode 30 includes a main electrode portion 21 provided with a second process gas introduction hole 21a, a gas shower plate portion 23 that forms a gas diffusion space DS between the main electrode portion 21, and a gas diffusion space DS.
  • the gas diffusion plate 25 and the plurality of heat transfer pillar portions 27 are arranged on the top plate portion 1 side in the film forming chamber 10 with a predetermined interval from the upper surface of the stage portion 20.
  • the distance between the plasma electrode 30 and the stage unit 20 is, for example, about several mm to several tens mm depending on the film forming conditions.
  • the main electrode portion 21 is a box-like body having an opening on the stage portion 20 side, and a second process gas introduction hole 21a is provided on the top side of the main electrode portion 21.
  • the main electrode portion 21 is attached to the lower surface of the top plate portion 1 such that the second process gas introduction hole 21a communicates with the first process gas introduction hole 1a.
  • Receive power supply A flow path 21 b for cooling the main electrode portion 21 by flowing a coolant such as water is formed in the top portion of the main electrode portion 21.
  • the gas shower plate portion 23 is a flat plate member having a plurality of gas discharge holes 23a for discharging process gas to the stage portion 20 side.
  • the arrangement is selected so that the process gas can be uniformly discharged from the plasma electrode 30 to the stage unit 20 side.
  • the gas shower plate portion 23 is provided on the end portion of the main electrode portion 21 on the stage portion 20 side, specifically on the lower end of the side wall portion of the main electrode portion 21 and the lower end of each heat transfer pillar portion 27, for example, with screws or the like. It is attached by a fixture S 1 (see FIG. 2).
  • a space between the top surface inside the main electrode portion 21 and the upper surface of the gas shower plate portion 23 becomes a gas diffusion space DS.
  • the gas diffusion plate 25 is a plate-like member having a plurality of gas flow holes 25a through which process gas flows and a plurality of fixing pillar portions 25b, and is spaced from the gas shower plate portion 23, and The gas shower plate portion 23 is disposed in the gas diffusion space DS so as to face each other.
  • the arrangement position of each gas circulation hole 25a is selected so as not to overlap the gas discharge hole 23a of the gas shower plate portion 23 in plan view.
  • the gas diffusion plate 25 is fixed to the main electrode portion 21 by, for example, a fixing tool S 2 (see FIG. 2) such as a screw inserted into the fixing pillar portion 25b from the gas shower plate portion 23 side.
  • the process gas introduced into the gas diffusion space DS through the first process gas introduction hole 1a and the second process gas introduction hole 21a is transferred to the gas diffusion space DS. It becomes easy to diffuse uniformly inside. Further, by disposing each gas circulation hole 25a so as not to overlap the gas discharge hole 23a in plan view, it becomes easy to discharge the process gas from the plasma electrode 30 into the film forming chamber 10 uniformly. As a result, it is easy to improve the uniformity of plasma generated in the space between the plasma electrode 30 and the deposition target substrate 50 during film formation. A part of the flow direction of the process gas in the plasma electrode 30 is indicated by a dashed arrow A in FIG.
  • Each heat transfer pillar portion 27 protrudes from the top of the main electrode portion 21 toward the gas shower plate portion 23, and each heat transfer pillar portion 27 passes through the gas flow hole 25 a and is a gas shower plate.
  • the gas shower plate part 23 and the main electrode part 21 are thermally connected.
  • a gap is formed between the inner wall of the gas flow hole 25a and the peripheral surface of the heat transfer pillar portion 27 passing through the gas flow hole 25a so that the process gas can flow.
  • the main electrode portion 21 and each heat transfer pillar portion 27 are integrally formed from one material.
  • Each of the main electrode part 21, the gas shower plate part 23, the gas diffusion plate 25, and the heat transfer pillar part 27 constituting the plasma electrode part 30 is generally made of aluminum.
  • the thermal conductivity, electrical conductivity, In consideration of mechanical strength and the like, it is also possible to manufacture with other metal materials, alloy materials, composite metal materials and the like.
  • the top panel 1 is connected to the high-frequency power source 60 (see FIG. 1) via the power wiring 55 (see FIG. 1) and the high-frequency matching unit (impedance matching unit; not shown).
  • the high frequency power supply 60 receives the supply of high frequency power.
  • the high frequency power supplied to the top plate portion 1 is conducted from the top plate portion 1 to the plasma electrode 30, and from the plasma electrode 30 to the stage portion 20 and the deposition target substrate 50 placed on the stage portion 20. Conducted with.
  • a high-frequency electric field is formed in the space between the plasma electrode 30, the stage unit 20, and the deposition target substrate 50.
  • a coolant such as water is caused to flow through the flow path 21 b in the main electrode portion 21.
  • a process gas supply source (not shown) and the first process gas introduction hole 1a are connected to each other via a process gas supply pipe (not shown) to the plasma electrode 30. While the gas is supplied, an exhaust pump (not shown) is connected to the exhaust pipe connection portion 9 via the exhaust pipe, and the inside of the film forming chamber 10 is adjusted to a desired pressure.
  • a mixed gas of monosilane (SiH 4 ) gas as a silicon source and hydrogen (H 2 ) gas as a carrier gas is used as a process gas.
  • the process gas is introduced into the plasma electrode 30 from the first process gas introduction hole 1a through the second process gas introduction hole 21a, and then discharged from the gas discharge holes 23a of the gas shower plate part 23 to the stage part 20 side. Then, it is turned into plasma in the above-mentioned high-frequency electric field.
  • active species such as SiH 3 , SiH 2 , SiH, Si, and H are generated, and these active species enter the deposition target substrate 50 to be amorphous or fine on the deposition target substrate 50.
  • Crystalline silicon is deposited.
  • an amorphous or microcrystalline silicon thin film is formed on the deposition target substrate 50.
  • the main electrode portion 21 of the plasma electrode 30 receives heat input from the plasma, but the main electrode portion 21 is cooled by the refrigerant flowing through the flow path 21b. Thermal deformation is suppressed.
  • the gas shower plate portion 23 also receives heat input from the plasma, but since the heat conducted from the plasma to the gas shower plate portion 23 is conducted from each heat transfer pillar portion 27 to the main electrode portion 21, the gas shower plate 23 The part 23 can also suppress thermal deformation.
  • a part of the heat conduction direction in the plasma electrode 30 at the time of film formation is indicated by a dashed-dotted arrow B in FIG.
  • the heat transfer pillar portion 27 is passed through the gas flow hole 25a formed in the gas diffusion plate 25. Compared with the case where the heat transfer pillars are provided so that they do not pass, the diameter of the heat transfer pillars 27 is increased while maintaining the uniformity of the generated plasma, or the number of heat transfer pillars 27 is increased. Is easy. This point will be specifically described with reference to FIG.
  • FIG. 3 is a cross-sectional view schematically showing the plasma electrode (shower head) of Patent Document 2.
  • the plasma electrode 130 shown in the figure includes an upper plate 121 provided with a process gas introduction hole 121 a and a lower plate that is attached to an end of the upper plate 121 and forms a gas diffusion space DS between the upper plate 121. 123, an intermediate plate 125 disposed in the gas diffusion space DS, and a cover member 127 attached to the lower surface of the lower plate 123.
  • a plurality of heat transfer members 129 a disposed between the intermediate plate 125 and the upper plate 121 and a plurality of heat transfer members 129 b disposed between the intermediate plate 125 and the lower plate 123 are also provided.
  • the lower plate 123 is provided with a plurality of gas passage holes 123a through which process gas flows
  • the intermediate plate 125 is provided with a plurality of gas passage holes 125a through which process gas flows.
  • the cover member 127 is provided with a plurality of gas discharge holes 127a for discharging process gas.
  • each heat-transfer member 129a, 129b is arrange
  • the design flexibility of the plasma electrode 130 is relatively low, and it is difficult to increase the diameter of the heat transfer members 129a and 129b and increase the number of heat transfer members 129a and 129b.
  • the heat transfer pillar portion 27 is passed through the gas flow hole 25a as described above, the heat transfer pillar is maintained while maintaining the uniformity of the generated plasma. It is easy to increase the diameter of the portion 27 or increase the number of the heat transfer pillar portions 27.
  • a microcrystalline silicon film is deposited over a glass substrate using a silane gas (SiH 4 ) and a hydrogen gas (H 2 ) with the apparatus illustrated in FIG. 1
  • the plasma electrode 30 of the plasma CVD apparatus used here has a size of 1.2 m ⁇ 1.5 m in plan view. Further, the heat transfer pillar portion 27 having a diameter of 15 mm was disposed in the gas diffusion space DS with a pitch of 40 mm.
  • a glass substrate 7 (thickness: 4 mm) of 1400 mm ⁇ 1100 mm was placed on the stage unit 20 in the film forming chamber 10 evacuated, and the substrate temperature was raised to 200 ° C. by a heater (not shown). Next, the stage part 20 was set so that the space
  • SiH 4 gas and H 2 gas were supplied to the first process gas introduction hole 1a at flow rates of 1 slm and 50 slm, respectively.
  • the supplied process gas is introduced into the gas diffusion space DS, and is supplied into the film forming chamber 10 from the gas discharge hole 23a of the gas shower plate portion 23 through the gas circulation hole 25a.
  • the gas was exhausted from the exhaust port 5a by an exhaust pump (not shown) so that the gas pressure in the film forming chamber 10 was 1000 Pa.
  • high frequency power of 13.56 MHz was supplied to generate SiH 4 / H 2 mixed plasma between the plasma electrode 30 and the glass substrate.
  • the temperature rise of the gas shower plate 23 in a state where film formation was performed was measured using an optical fiber thermometer from the back side of the gas shower plate 23, that is, from the gas diffusion space DS side.
  • the shower plate back surface temperature rose to 33 degrees and reached equilibrium.
  • the rising temperature during film formation is 13 degrees, and it can be seen that the method of this embodiment can be sufficiently cooled by optimizing the diameter and number of the heat transfer pillar portions 27 necessary for cooling the gas shower plate 23. .
  • the film thickness and film quality uniformity of the microcrystalline silicon thin film described above can be obtained because of the optimal arrangement of the gas discharge holes 23a necessary for ensuring the uniformity by the method of the present embodiment and the gas shower plate 23. This is because the configuration of the heat transfer pillar portion 27 necessary for cooling can be easily optimized at the same time.
  • the in-plane uniformity of the film is good when the film is formed under a narrow condition where the distance between the gas shower plate portion 23 and the glass substrate is 10 mm or less. It becomes.
  • the deformation of the gas shower plate portion 23 is small and the in-plane of the film Uniformity is improved.
  • a semiconductor film having excellent uniformity can be formed on a large substrate having an area of 1 square m or more, for example, 1 m or more on one side, and productivity is excellent.
  • FIG. 4 is a cross-sectional view showing a part of a schematic configuration of a plasma electrode according to Embodiment 3 of the present invention
  • FIG. 5 is an enlarged cross-sectional view showing a part of the plasma electrode of FIG. 4,
  • FIG. It is sectional drawing which decomposes
  • the gas shower plate portion 23 is attached to the heat transfer pillar portion 27 by a fixture S 1 ′ (screw or bolt) that can be tightened or loosened from the stage portion 20 side (plasma surface side).
  • a fixture S 1 ′ screw or bolt
  • a through hole 71 with counterbore 70 is provided in the gas shower plate portion 23 so that the fixture S 1 ′ does not protrude from the surface of the gas shower plate portion 23, and the fixing device S 1 is a screw with a head from the plasma surface side. 'Is inserted and inserted into the screw hole 72 of the heat transfer pillar portion 27 on the back surface side, and the screw is tightened.
  • each heat transfer pillar portion 27 is sufficiently fastened with a screw so that each heat transfer pillar portion 27 and the gas shower plate portion 23 are brought into close contact with each other.
  • the gas shower plate portion 23 is attached to the heat transfer pillar portion 27 with screws.
  • the head of the screw is combined with a fixture S 1 having a flat countersunk screw with a flat head tip and a countersunk hole.
  • the gas shower plate portion 23 is made substantially flat so that it substantially coincides with the plasma surface side of the gas shower plate portion 23.
  • the screw has + and-depressions that can be rotated and installed with a screwdriver. Since the screw for fixing the gas shower plate portion 23 of the CVD apparatus for forming a meter-sized substrate to the heat transfer pillar portion 27 is about M5, generally the depth of the above-mentioned hollow portion is usually ⁇ The following problems occur due to 2 mm.
  • the interval between the stage unit 20 on which the deposition target substrate is placed and the plasma electrode 30 is set to be as narrow as about 10 mm.
  • the amount of the recess of the screw with respect to the set gap between the gas shower plate portion 23 and the stage portion 20 is several tens of percent, so that the plasma electrode surface in contact with the plasma is not flat and uneven. Therefore, the substantial distance from the stage unit 20 to the plasma electrode 30 varies within the surface of the gas shower plate unit 23. This unevenness affects plasma generation, and for example, the plasma density increases and decreases where there are screws and where there are no screws.
  • a fixture S 1 ′ for fixing the gas shower plate portion 23 to the heat transfer pillar portion 27 is attached by being submerged from the shower plate surface.
  • a counterbore 70 is provided on the gas shower plate portion 23 in order to sink and attach the fixture S 1 ′, which is a screw.
  • the lid F 1 is attached to the counterbore 70.
  • the depth of the counterbore 70 is the same as the thickness of the lid F 1 so that no unevenness occurs on the shower plate surface.
  • the lid F 1 is attached with a screw provided on the gas shower plate portion 23.
  • the lid F 1 is not particularly required to be attached and fixed, but if the lid F 1 is provided with a slight recess 73 of 1 mm or less, the lid F 1 can be securely screwed into the gas shower plate portion 23.
  • This lid F 1 is different from the fixture S 1 'for fastening the gas shower plate 23 and the heat transfer pillar portion 27, there is no need to fasten by a strong force, the screw holes to be used for detaching the lid F 1
  • the grooves and the grooves can be made very small like a slight depression 73.
  • the recess 73 may not be provided as long as it can be detached and attached by being rotated by the frictional force of the surface.
  • the material of the lid F 1 is not particularly defined, but the same material as the gas shower plate portion 23 is desirable.
  • the gas shower plate portion 23 and the heat transfer pillar portion 27 can be fastened with a sufficient force, and the surface of the gas shower plate portion 23 in contact with the plasma has a flat surface without unevenness, so that the plasma is uniform. Improves.
  • the material of the fixture S 1 is the same as that of the gas shower plate portion 23. Since the head of the fixture S 1 ′ is completely hidden, there is no problem even if a material different from the gas shower plate portion 23 is used.
  • the gas shower plate 23 is made of aluminum or an alloy thereof, it is possible to use screws of stainless steel or copper alloy that are harder than those.
  • a film of a solid lubricant or the like may be formed in the screw groove.
  • a solid lubricant or the like for example, molybdenum disulfide
  • the replacement operation of the gas shower plate portion 23 is facilitated and the lid F 1 is provided, so that these solid lubricants can be prevented from entering the film forming chamber 10 from the screw groove and being contaminated.
  • FIG. 7 is a cross-sectional view showing a part of a schematic configuration of Embodiment 4 of the plasma electrode according to the present invention.
  • the heat transfer pillar portion 27 is provided with a screw 81 at the end on the side where the gas shower plate portion 23 is attached.
  • the gas shower plate 23 is attached and fixed by tightening a nut 82 to the screw 81.
  • the lid F 2 is attached in the same manner as described above.
  • the surface of the stage side of the gas shower plate 23, a counterbore 83 which cover F 2 enters the nut 82 is provided, flush with the surface of the lid F 2 gas shower plate 23 surface depth of counterbore 83 To prevent unevenness.
  • the plasma CVD apparatus of the present invention has been described with reference to the embodiment.
  • the present invention is not limited to the above embodiment.
  • whether or not the heat transfer pillar portion is integrally formed with the main electrode portion from one material can be appropriately selected.
  • the individual heat transfer pillar parts are attached to the main electrode part by a fixture such as a screw. It may be attached to the top.
  • each heat transfer pillar portion and the main electrode portion from one material. If each heat transfer pillar part is formed integrally with the main electrode part from one material, there is no contact interface between the heat transfer pillar part and the main electrode part, so there is no decrease in heat conduction at the contact interface and cooling performance. It becomes easy to obtain a high plasma electrode.
  • the number of heat transfer pillar portions and the number of gas flow holes in the gas diffusion plate may be the same, or the number of gas flow holes may be larger than the number of heat transfer pillar portions.
  • each of the main electrode portion and the gas shower plate portion constituting the plasma electrode may be any shape as long as a gas diffusion space can be formed between the main electrode portion and the gas shower plate portion.
  • both can be box-like bodies.
  • the top of the main electrode portion can also function as the top plate of the film forming chamber. That is, it is possible to configure a plasma CVD apparatus using the top of the main electrode portion as the top plate of the film forming chamber.
  • the plasma CVD apparatus of the present invention may be either a horizontal type or a vertical type, and either type can be appropriately selected according to the use of the plasma CVD apparatus.
  • the present invention can be variously modified, modified, combined, etc. other than those described above.
  • the plasma CVD apparatus according to the present invention is suitable as an apparatus for forming a thin film such as a silicon thin film, particularly as an apparatus for forming a thin film having a large area at a high speed at a time.

Abstract

La présente invention concerne un appareil à plasma de dépôt en phase vapeur (CVD) (40), comprenant : une électrode à plasma (30), configurée pour fournir une section d'électrode principale (21), et pourvue d'un orifice d'introduction de gaz de processus (second orifice d'introduction de gaz de processus (21a)) ; et une section de plaque de gerbe de gaz (23), attachée à une partie d'extrémité de la section d'électrode principale, et formant un espace de diffusion de gaz (DS) entre la section d'électrode principale et la section de plaque de gerbe de gaz. Plusieurs orifices d'injection de gaz (23a), destinés à injecter un gaz de processus, sont formés dans la section de plaque de gerbe de gaz. A l'intérieur de l'espace de diffusion de gaz, sont disposées une plaque de diffusion de gaz (25) comportant plusieurs orifices de distribution de gaz (25a) pour distribuer le gaz de processus, et plusieurs sections de colonnes de transfert de chaleur (27) passant à travers les orifices de distribution de gaz de la plaque de diffusion de gaz et raccordant thermiquement l'une à l'autre la section de plaque de gerbe de gaz et la section d'électrode principale. Un espace est formé entre la paroi interne de chaque orifice de distribution de gaz et la surface circonférentielle de chaque section de colonnes de transfert de chaleur passant à travers les orifices de distribution de gaz.
PCT/JP2010/057383 2009-08-10 2010-04-26 Appareil à plasma de dépôt en phase vapeur (cvd), électrode à plasma, et procédé de fabrication d'un film semi-conducteur WO2011018912A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201080035372.8A CN102473612B (zh) 2009-08-10 2010-04-26 等离子体cvd装置、等离子体电极以及半导体膜的制造方法
JP2011526696A JP5398837B2 (ja) 2009-08-10 2010-04-26 プラズマｃｖｄ装置、プラズマ電極および半導体膜の製造方法
DE112010003248.3T DE112010003248B4 (de) 2009-08-10 2010-04-26 Plasma-CVD-Vorrichtung, Plasma-Elektrode und Verfahren zum Herstellen einerHalbleiterschicht

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CN112030110A (zh) * 2020-08-21 2020-12-04 无锡爱尔华光电科技有限公司 一种基材可分离的真空镀膜设备
JP2022501501A (ja) * 2018-09-26 2022-01-06 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated プラズマ処理チャンバのための熱伝導スペーサ
TWI754404B (zh) * 2019-11-22 2022-02-01 大陸商中微半導體設備（上海）股份有限公司 上電極元件以及等離子體處理設備
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JP6662998B2 (ja) * 2016-03-03 2020-03-11 コアテクノロジー株式会社 プラズマ処理装置
KR102243897B1 (ko) * 2019-06-26 2021-04-26 세메스 주식회사 샤워 헤드 유닛, 이를 포함하는 기판 처리 장치 및 샤워 헤드 유닛 조립 방법

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JP2018528616A (ja) * 2015-09-22 2018-09-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シャワーヘッド支持構造
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US11236423B2 (en) * 2018-12-26 2022-02-01 Tokyo Electron Limited Film-forming apparatus
TWI754404B (zh) * 2019-11-22 2022-02-01 大陸商中微半導體設備（上海）股份有限公司 上電極元件以及等離子體處理設備
CN112030110A (zh) * 2020-08-21 2020-12-04 无锡爱尔华光电科技有限公司 一种基材可分离的真空镀膜设备

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