WO2011015415A2 - Circuit déclencheur et redresseur, en particulier pour un microsystème autonome en énergie comportant un microgénérateur piézoélectrique - Google Patents

Circuit déclencheur et redresseur, en particulier pour un microsystème autonome en énergie comportant un microgénérateur piézoélectrique Download PDF

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Publication number
WO2011015415A2
WO2011015415A2 PCT/EP2010/059636 EP2010059636W WO2011015415A2 WO 2011015415 A2 WO2011015415 A2 WO 2011015415A2 EP 2010059636 W EP2010059636 W EP 2010059636W WO 2011015415 A2 WO2011015415 A2 WO 2011015415A2
Authority
WO
WIPO (PCT)
Prior art keywords
effect transistor
field effect
voltage
gate
terminal
Prior art date
Application number
PCT/EP2010/059636
Other languages
German (de)
English (en)
Other versions
WO2011015415A3 (fr
Inventor
Alexander Frey
Djordje Marinkovic
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to US13/389,369 priority Critical patent/US20120133419A1/en
Priority to EP10732912A priority patent/EP2462695A2/fr
Priority to JP2012523259A priority patent/JP2013501442A/ja
Priority to CN201080034921XA priority patent/CN102474250A/zh
Publication of WO2011015415A2 publication Critical patent/WO2011015415A2/fr
Publication of WO2011015415A3 publication Critical patent/WO2011015415A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Abstract

L'invention concerne un circuit déclencheur pour détecter un niveau de tension suffisamment important et pour obtenir une puissance de sortie suffisante. L'invention concerne un redresseur qui délivre efficacement plus de puissance de sortie que des solutions classiques pour une tension de sortie égale. Ce circuit déclencheur et ce redresseur doivent pouvoir s'utiliser notamment avec un microsystème autonome en énergie qui comporte un microgénérateur piézoélectrique. L'invention est caractérisée en ce que, pour le circuit déclencheur, deux transistors à effet de champ peuvent être utilisés simultanément. Le circuit redresseur comporte un transistor à effet de champ qui est monté comme une diode, en parallèle à un redresseur actif.
PCT/EP2010/059636 2009-08-07 2010-07-06 Circuit déclencheur et redresseur, en particulier pour un microsystème autonome en énergie comportant un microgénérateur piézoélectrique WO2011015415A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/389,369 US20120133419A1 (en) 2009-08-07 2010-07-06 Trigger circuit and rectifier, in particular for a self-powered microsystem having a piezoelectric microgenerator
EP10732912A EP2462695A2 (fr) 2009-08-07 2010-07-06 Circuit déclencheur et redresseur, en particulier pour un microsystème autonome en énergie comportant un microgénérateur piézoélectrique
JP2012523259A JP2013501442A (ja) 2009-08-07 2010-07-06 特に圧電式のマイクロジェネレータを有しているエネルギ自立型のマイクロシステムのためのトリガ回路及び整流器
CN201080034921XA CN102474250A (zh) 2009-08-07 2010-07-06 触发电路和整流器、尤其是用于具有压电微型发电机的能量自给的微系统的触发电路和整流器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009036623A DE102009036623B4 (de) 2009-08-07 2009-08-07 Triggerschaltung und Gleichrichter, insbesondere für ein einen piezoelektrischen Mikrogenerator aufweisendes, energieautarkes Mikrosystem
DE102009036623.7 2009-08-07

Publications (2)

Publication Number Publication Date
WO2011015415A2 true WO2011015415A2 (fr) 2011-02-10
WO2011015415A3 WO2011015415A3 (fr) 2011-04-14

Family

ID=43216236

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/059636 WO2011015415A2 (fr) 2009-08-07 2010-07-06 Circuit déclencheur et redresseur, en particulier pour un microsystème autonome en énergie comportant un microgénérateur piézoélectrique

Country Status (6)

Country Link
US (1) US20120133419A1 (fr)
EP (1) EP2462695A2 (fr)
JP (1) JP2013501442A (fr)
CN (1) CN102474250A (fr)
DE (1) DE102009036623B4 (fr)
WO (1) WO2011015415A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10381948B2 (en) 2013-08-22 2019-08-13 Analog Devices Global Power conversion system with energy harvesting
GB201315061D0 (en) * 2013-08-22 2013-10-02 Metroic Ltd Power conversion apparatus
US9385645B2 (en) 2013-08-30 2016-07-05 Abb Technology Ag Methods and systems for electrical DC generation
US9571022B2 (en) * 2013-08-30 2017-02-14 Abb Schweiz Ag Electrical generator with integrated hybrid rectification system comprising active and passive rectifiers connected in series
JP6289974B2 (ja) * 2014-03-31 2018-03-07 ルネサスエレクトロニクス株式会社 半導体装置
CN109804563B (zh) * 2016-10-14 2021-01-29 华为技术有限公司 一种整流电路及整流器

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Publication number Priority date Publication date Assignee Title
US4346310A (en) * 1980-05-09 1982-08-24 Motorola, Inc. Voltage booster circuit
US5239212A (en) * 1982-07-12 1993-08-24 Hitachi, Ltd. Gate circuit of combined field-effect and bipolar transistors with an improved discharge arrangement
JPS6197576A (ja) * 1984-10-19 1986-05-16 Toshiba Corp 高電位検知回路
JPS6362411A (ja) * 1986-09-02 1988-03-18 Nec Corp 半導体回路
JP2785732B2 (ja) * 1995-02-08 1998-08-13 日本電気株式会社 電源降圧回路
US5589790A (en) * 1995-06-30 1996-12-31 Intel Corporation Input structure for receiving high voltage signals on a low voltage integrated circuit device
JPH09162712A (ja) * 1995-12-06 1997-06-20 Fujitsu Ltd 電源投入検出回路
US5867013A (en) * 1997-11-20 1999-02-02 Cypress Semiconductor Corporation Startup circuit for band-gap reference circuit
US6281737B1 (en) * 1998-11-20 2001-08-28 International Business Machines Corporation Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor
US6731157B2 (en) * 2002-01-15 2004-05-04 Honeywell International Inc. Adaptive threshold voltage control with positive body bias for N and P-channel transistors
KR100476703B1 (ko) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 파워 업 회로
JP3852399B2 (ja) * 2002-11-29 2006-11-29 株式会社リコー 電源切替回路
US7012415B2 (en) * 2003-10-16 2006-03-14 Micrel, Incorporated Wide swing, low power current mirror with high output impedance

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
C. PETERS; F. HENRICI; M. ORTMANNS; Y. MANOLI: "Highbandwidth floating gate CMOS rectifiers with reduced voltage drop", IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, vol. 18-21, pages 2598 - 2601
S. XU; K. D. T. NGO; T. NISHIDA; G. CHUNG; A. SHARMA: "Low Frequency Pulsed Resonant Converter for Energy Harvesting", IEEE TRANSACTIONS ON POWER ELECTRONICS, vol. 22, no. 1, January 2007 (2007-01-01), pages 63 - 67, XP011154554, DOI: doi:10.1109/TPEL.2006.886647

Also Published As

Publication number Publication date
DE102009036623B4 (de) 2011-05-12
WO2011015415A3 (fr) 2011-04-14
CN102474250A (zh) 2012-05-23
DE102009036623A1 (de) 2011-02-17
JP2013501442A (ja) 2013-01-10
EP2462695A2 (fr) 2012-06-13
US20120133419A1 (en) 2012-05-31

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