WO2011010881A3 - 3족 질화물 반도체 발광소자 - Google Patents

3족 질화물 반도체 발광소자 Download PDF

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Publication number
WO2011010881A3
WO2011010881A3 PCT/KR2010/004823 KR2010004823W WO2011010881A3 WO 2011010881 A3 WO2011010881 A3 WO 2011010881A3 KR 2010004823 W KR2010004823 W KR 2010004823W WO 2011010881 A3 WO2011010881 A3 WO 2011010881A3
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WO
WIPO (PCT)
Prior art keywords
emitting device
group iii
iii nitride
nitride semiconductor
semiconductor light
Prior art date
Application number
PCT/KR2010/004823
Other languages
English (en)
French (fr)
Other versions
WO2011010881A2 (ko
Inventor
남기연
김현석
김창태
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Priority to CN2010800335630A priority Critical patent/CN102782884A/zh
Publication of WO2011010881A2 publication Critical patent/WO2011010881A2/ko
Publication of WO2011010881A3 publication Critical patent/WO2011010881A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시의 일 예에 따른 3족 질화물 반도체 발광소자는 기판; 상기 기판 위에 구비되고, 순차로 적층되는 복수의 반도체층을 가지며, 상기 복수의 반도체층에 의해 정의되는 측면과 상면 및 상기 기판과 접하는 하면을 가지는 다층구조 반도체층; 상기 측면에 의해 정의되는 제1 스캐터링면; 및 상기 상면과 상기 측면이 만나는 부분에 형성되는 단차(step)에 의해 정의되는 제2 스캐터링면;을 포함한다. 본 개시에 따른 3족 질화물 반도체 발광소자의 일 예에 의하면, 광추출효율과 전기적인 특성을 향상시킬 수 있다.
PCT/KR2010/004823 2009-07-22 2010-07-22 3족 질화물 반도체 발광소자 WO2011010881A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800335630A CN102782884A (zh) 2009-07-22 2010-07-22 Iii族氮化物半导体发光器件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090066853A KR101098589B1 (ko) 2009-07-22 2009-07-22 3족 질화물 반도체 발광소자
KR10-2009-0066853 2009-07-22

Publications (2)

Publication Number Publication Date
WO2011010881A2 WO2011010881A2 (ko) 2011-01-27
WO2011010881A3 true WO2011010881A3 (ko) 2011-04-28

Family

ID=43499552

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004823 WO2011010881A2 (ko) 2009-07-22 2010-07-22 3족 질화물 반도체 발광소자

Country Status (3)

Country Link
KR (1) KR101098589B1 (ko)
CN (1) CN102782884A (ko)
WO (1) WO2011010881A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107689407B (zh) * 2017-08-21 2019-09-06 厦门乾照光电股份有限公司 一种led芯片及其制作方法
CN114335281A (zh) * 2021-12-31 2022-04-12 淮安澳洋顺昌光电技术有限公司 一种半导体发光元件及其制备方法、led芯片

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009337A (ja) * 2000-06-21 2002-01-11 Nichia Chem Ind Ltd 窒化物半導体素子
KR20030026090A (ko) * 2001-09-24 2003-03-31 주식회사 옵토웨이퍼테크 반도체 발광 칩 및 그의 제조방법과 반도체 발광소자 및그의 제조방법
JP2007294566A (ja) * 2006-04-24 2007-11-08 Nichia Chem Ind Ltd 半導体発光素子及び半導体発光素子の製造方法
JP2008124254A (ja) * 2006-11-13 2008-05-29 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
KR20080089860A (ko) * 2007-04-02 2008-10-08 엘지이노텍 주식회사 반도체 발광소자 및 반도체 발광소자의 제조 방법
KR20090002161A (ko) * 2007-06-20 2009-01-09 엘지이노텍 주식회사 반도체 발광소자 및 반도체 발광소자의 제조 방법
KR20090020215A (ko) * 2007-08-23 2009-02-26 주식회사 에피밸리 반도체 발광소자 및 이를 제조하는 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009002129A2 (en) * 2007-06-27 2008-12-31 Epivalley Co., Ltd. Semiconductor light emitting device and method of manufacturing the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009337A (ja) * 2000-06-21 2002-01-11 Nichia Chem Ind Ltd 窒化物半導体素子
KR20030026090A (ko) * 2001-09-24 2003-03-31 주식회사 옵토웨이퍼테크 반도체 발광 칩 및 그의 제조방법과 반도체 발광소자 및그의 제조방법
JP2007294566A (ja) * 2006-04-24 2007-11-08 Nichia Chem Ind Ltd 半導体発光素子及び半導体発光素子の製造方法
JP2008124254A (ja) * 2006-11-13 2008-05-29 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
KR20080089860A (ko) * 2007-04-02 2008-10-08 엘지이노텍 주식회사 반도체 발광소자 및 반도체 발광소자의 제조 방법
KR20090002161A (ko) * 2007-06-20 2009-01-09 엘지이노텍 주식회사 반도체 발광소자 및 반도체 발광소자의 제조 방법
KR20090020215A (ko) * 2007-08-23 2009-02-26 주식회사 에피밸리 반도체 발광소자 및 이를 제조하는 방법

Also Published As

Publication number Publication date
KR101098589B1 (ko) 2011-12-26
KR20110009450A (ko) 2011-01-28
WO2011010881A2 (ko) 2011-01-27
CN102782884A (zh) 2012-11-14

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