WO2010150972A3 - 반도체 발광소자 및 그 제조방법 - Google Patents

반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
WO2010150972A3
WO2010150972A3 PCT/KR2010/002605 KR2010002605W WO2010150972A3 WO 2010150972 A3 WO2010150972 A3 WO 2010150972A3 KR 2010002605 W KR2010002605 W KR 2010002605W WO 2010150972 A3 WO2010150972 A3 WO 2010150972A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitting device
semiconductor light
manufacturing same
laminate
inclination
Prior art date
Application number
PCT/KR2010/002605
Other languages
English (en)
French (fr)
Other versions
WO2010150972A2 (ko
Inventor
박은현
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2010150972A2 publication Critical patent/WO2010150972A2/ko
Publication of WO2010150972A3 publication Critical patent/WO2010150972A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 복수의 반도체층; 및 복수의 반도체층이 순차로 적층되는 적층면, 그와 대향되는 저면 및 서로 대향되는 한쌍의 측면을 가지는 기판;을 포함하며, 적어도 하나의 측면은 적층면에 대해 제1 경사를 가지는 제1 면과 제1 경사와 다른 제2 경사를 가지는 제2 면을 포함하고, 적층면의 중심과 저면의 중심은 서로 오프셋(offset)되도록 구비되는 것을 특징으로 하는 반도체 발광소자 및 그 제조방법에 관한 것이다.
PCT/KR2010/002605 2009-06-24 2010-04-26 반도체 발광소자 및 그 제조방법 WO2010150972A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090056335A KR101088392B1 (ko) 2009-06-24 2009-06-24 발광소자 칩 및 이의 제조방법
KR10-2009-0056335 2009-06-24

Publications (2)

Publication Number Publication Date
WO2010150972A2 WO2010150972A2 (ko) 2010-12-29
WO2010150972A3 true WO2010150972A3 (ko) 2011-03-31

Family

ID=43386989

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002605 WO2010150972A2 (ko) 2009-06-24 2010-04-26 반도체 발광소자 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR101088392B1 (ko)
WO (1) WO2010150972A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101444027B1 (ko) * 2013-05-27 2014-09-25 희성전자 주식회사 발광소자 제조방법
DE102014114613B4 (de) 2014-10-08 2023-10-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl an strahlungsemittierenden Halbleiterchips und optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09223818A (ja) * 1995-12-14 1997-08-26 Oki Electric Ind Co Ltd 端面発光型ｌｅｄ、端面発光型ｌｅｄアレイ、光源装置及びそれらの製造方法
KR19980019164A (ko) * 1996-08-31 1998-06-05 니시무로 타이조 반도체 발광소자 및 이를 이용한 반도체 발광장치 및 반도체 광소자의 제조방법
KR100550847B1 (ko) * 2003-06-25 2006-02-10 삼성전기주식회사 질화 갈륨계 발광 다이오드 소자의 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245043A (ja) 2005-02-28 2006-09-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法及び発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09223818A (ja) * 1995-12-14 1997-08-26 Oki Electric Ind Co Ltd 端面発光型ｌｅｄ、端面発光型ｌｅｄアレイ、光源装置及びそれらの製造方法
KR19980019164A (ko) * 1996-08-31 1998-06-05 니시무로 타이조 반도체 발광소자 및 이를 이용한 반도체 발광장치 및 반도체 광소자의 제조방법
KR100550847B1 (ko) * 2003-06-25 2006-02-10 삼성전기주식회사 질화 갈륨계 발광 다이오드 소자의 제조 방법

Also Published As

Publication number Publication date
KR101088392B1 (ko) 2011-12-01
KR20100138013A (ko) 2010-12-31
WO2010150972A2 (ko) 2010-12-29

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