WO2010147006A1 - Elément de détection infrarouge et procédé de fabrication associé - Google Patents

Elément de détection infrarouge et procédé de fabrication associé Download PDF

Info

Publication number
WO2010147006A1
WO2010147006A1 PCT/JP2010/059518 JP2010059518W WO2010147006A1 WO 2010147006 A1 WO2010147006 A1 WO 2010147006A1 JP 2010059518 W JP2010059518 W JP 2010059518W WO 2010147006 A1 WO2010147006 A1 WO 2010147006A1
Authority
WO
WIPO (PCT)
Prior art keywords
main surface
junction
substrate
semiconductor layer
detection element
Prior art date
Application number
PCT/JP2010/059518
Other languages
English (en)
Japanese (ja)
Inventor
牧野　健二
Original Assignee
浜松ホトニクス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 浜松ホトニクス株式会社 filed Critical 浜松ホトニクス株式会社
Publication of WO2010147006A1 publication Critical patent/WO2010147006A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds

Definitions

  • the present invention relates to an infrared detection element and a manufacturing method thereof.
  • Patent Document 1 discloses an infrared sensor including a substrate, an N-type semiconductor layer and a P-type semiconductor layer stacked on the substrate, and a plurality of single sensors connected to each other in a state of being separated from each other by a groove. Are listed. This infrared sensor detects infrared rays by a change in current generated in each single sensor.
  • the inventors discovered the following problems as a result of examining the conventional infrared detection element in detail.
  • the present invention has been made to solve the above-described problems, and an object thereof is to provide a highly reliable infrared detection element and a method for manufacturing the same.
  • an infrared detecting element includes a substrate, a PN semiconductor layer, an intermediate electrode, and a terminal electrode.
  • the substrate has a first main surface and a second main surface opposite to the first main surface.
  • the PN semiconductor layer is formed of a plurality of N-type conductive layers and a plurality of P-type conductive layers provided on the first main surface of the substrate and arranged alternately along the first main surface. Yes.
  • the PN semiconductor layer is provided with a groove whose bottom surface is defined by the first main surface. By this groove, a pair of the first PN junction and the second PN junction adjacent to each other is formed. It is processed so as to extend linearly along the main surface of 1. That is, the PN semiconductor layer provided on the first main surface of the substrate can be processed into an arbitrary shape by adjusting the groove formation position.
  • the arrangement direction (stacking direction) of the N-type conductive layer and the P-type conductive layer constituting the PN semiconductor layer is parallel to the first main surface of the substrate and extends in the extending direction of the PN semiconductor layer. Match. Therefore, the PN junction portion that is the boundary between the N-type conductive layer and the P-type conductive layer constituting the PN semiconductor layer is also arranged along the extending direction of the PN semiconductor layer.
  • one is a first PN junction that constitutes a part of an effective sensitivity region for infrared rays, and the other is an intermediate This is called a second PN junction that constitutes a part of the electrode installation region.
  • the intermediate electrode short-circuits the second PN junction.
  • the intermediate electrode exposes the first PN junction when the first main surface of the substrate is viewed along the direction of incidence of infrared rays from the first main surface of the substrate toward the second main surface, while the second PN junction is exposed.
  • the second PN junction is provided in contact with the PN junction.
  • the terminal electrode outputs a potential change caused by the electric charge generated at the first PN junction due to the infrared rays incident along the infrared incident direction.
  • This terminal electrode is provided at both ends of the PN semiconductor layer extending on the first main surface of the substrate.
  • the sensitivity is determined by the number of PN junctions per unit area. For this reason, when forming the intermediate electrode, it is not necessary to consider the aperture ratio (the area ratio of the effective sensitivity region to the infrared light receiving region), and the degree of freedom in design is improved.
  • the intermediate electrode is formed on the second PN junction, that is, on the PN semiconductor layer (on the side opposite to the substrate with respect to the PN semiconductor layer) without straddling the grooves partitioning each part of the PN semiconductor layer. This facilitates the formation of the intermediate electrode (that is, the intermediate electrode is accurately and reliably formed.
  • the infrared detection element As a result, it is possible to improve the yield of the infrared detecting element.
  • partitioning each part and processing the shape of the PN semiconductor layer itself into a linear shape a large number of PN junctions can be concentrated on the first main surface of the substrate with a simple configuration. Therefore, according to the infrared detection element having the above-described structure, it is possible to improve the yield of the infrared detection element and increase the number of PN junctions per unit area (improvement of sensitivity of the infrared detection element). As a result, the reliability of the obtained infrared detection element is greatly improved.
  • the PN semiconductor layer is preferably processed so as to extend in a meandering manner along the first main surface of the substrate.
  • the PN semiconductor layer is processed in such a shape, the number of PN junctions per unit area can be further increased, and as a result, the sensitivity of the infrared detection element can be improved.
  • the PN semiconductor layer may be processed so as to extend in a spiral shape along the first main surface of the substrate. Even when the PN semiconductor layer is processed in such a shape, the number of PN junctions per unit area can be further increased, and as a result, the sensitivity of the infrared detection element can be improved.
  • a method for manufacturing an infrared detecting element according to the present invention is a method for manufacturing an infrared detecting element having the above-described structure, and includes a conductive layer forming step, a groove forming step, an intermediate electrode forming step, and a terminal. An electrode formation process is provided.
  • a substrate having a first main surface and a second main surface opposite to the first main surface is prepared.
  • a conductive layer composed of a plurality of N-type conductive layers and a plurality of P-type conductive layers arranged alternately along the first main surface of the substrate is formed into a first layer of the substrate. It is formed on the main surface.
  • a PN semiconductor layer processed so that a pair of the first PN junction and the second PN junction adjacent to each other extends linearly along the first main surface is formed.
  • the PN semiconductor layer having such a shape can be obtained by forming a groove whose bottom surface is defined by the first main surface in a conductive layer formed on the first main surface.
  • the intermediate electrode forming step when the first main surface of the substrate is viewed along the infrared incident direction from the first main surface of the substrate toward the second main surface, the first PN junction is exposed, An intermediate electrode in contact with the second PN junction is formed on the second PN junction.
  • the intermediate electrode formed in this way functions to short-circuit the second PN junction.
  • terminal electrodes for outputting a potential change caused by charges generated in the first PN junction due to the incidence of infrared rays are formed at both ends of the PN semiconductor layer.
  • the intermediate electrode is formed on the second PN junction, that is, the PN semiconductor layer so as to sandwich the PN semiconductor layer together with the substrate.
  • the intermediate electrode is formed on the PN semiconductor layer without sandwiching the groove, the formation of the intermediate electrode is facilitated, and the yield of the infrared detection element can be improved.
  • the PN semiconductor layer processed into a linear shape by the groove on the first main surface of the substrate it becomes possible to densely arrange a large number of PN junctions with a simple configuration. In this case, the yield of the infrared detection element can be improved, and the sensitivity of the infrared detection element can be improved by increasing the number of PN junctions per unit area. As a result, according to the manufacturing method, a highly reliable infrared detection element can be obtained.
  • the reliability of the infrared detection element can be improved.
  • FIG. 2 is a cross-sectional view of the infrared detection element taken along line II-II in FIG.
  • FIG. 9 is a partial plan view showing an electrode layer formed in the step of FIG. 8.
  • FIG. 11 is a plan view showing grooves formed in the process of FIG. 10.
  • FIG. 14 is a plan view showing an opening formed in the step of FIG. 13.
  • the infrared detection element 1 is a quantum infrared detection element that outputs a potential change (voltage change) of a charge generated at a PN junction due to incidence of infrared rays. is there.
  • the infrared detection element 1 is formed on the substrate 2, the PN semiconductor layer 3 formed on the main surface A of the substrate 2, and the upper surface of the PN semiconductor layer 3 (surface opposite to the surface facing the substrate 2).
  • the substrate 2 has a first main surface and a second main surface opposite to the first main surface. In the following description, the first main surface is referred to as a main surface A.
  • FIG. 1 is a plan view showing a configuration of an embodiment of an infrared detection element according to the present invention.
  • FIG. 2 is a cross-sectional view of the infrared detecting element 1 taken along line II-II in FIG.
  • the substrate 2 is a semi-insulating substrate made of, for example, GaAs or InP.
  • a PN semiconductor layer 3 composed of a plurality of N-type conductive layers 7 and a plurality of P-type conductive layers 8 is provided on the main surface A of the substrate 2.
  • the PN semiconductor layer 3 is configured by arranging a plurality of N-type conductive layers 7 and a plurality of P-type conductive layers 8 alternately along the main surface A of the substrate 2. It is a lateral type semiconductor layer extending in a meandering manner.
  • the PN semiconductor layer 3 is formed so that its upper surface is flat, and its thickness is about 0.2 to 2 ⁇ m.
  • Each N-type conductive layer 7 is made of, for example, InAs, InSb, InAsSb, or the like, and is formed on the main surface A by epitaxial growth.
  • Each N-type conductive layer 7 is a light absorption layer having sensitivity to infrared rays, and the material thereof is selected according to the detection wavelength.
  • the impurity concentration of each N-type conductive layer 7 is 10 14 to 10 18 cm ⁇ 3 .
  • Each of the P-type conductive layers 8 is formed by performing thermal diffusion or ion implantation of Zn on the N-type conductive region (corresponding to the N-type conductive layer). Each P-type conductive layer 8 is formed so as to be all P-type in the thickness direction until reaching the main surface A of the substrate 2.
  • the plurality of N-type conductive layers 7 and the plurality of P-type conductive layers 8 are alternately arranged along the main surface A of the substrate 2. Between the N-type conductive layer 7 and the P-type conductive layer 8 adjacent to each other, the first PN junction portions 9 and the second PN junction portions 10 are alternately formed.
  • the first PN junction 9 and the second PN junction 10 are formed substantially perpendicular to the main surface A of the substrate 2.
  • the 1st PN junction part 9 the outer edge (edge on the opposite side to the edge which faces the board
  • the second PN junction portion 10 a part of the outer edge (the edge opposite to the edge facing the substrate 2) is covered with the intermediate electrode 4.
  • the intermediate electrode 4 is formed on the PN semiconductor layer 3 so as to straddle the second PN junction 10.
  • the intermediate electrode 4 includes a first ohmic metal 11, a second ohmic metal 12, and an electrode layer 13.
  • the first ohmic metal 11 is made of, for example, AuGe—Ni—Au.
  • the first ohmic metal 11 is formed in a block shape on the N-type conductive layer 7 and is in ohmic contact with the N-type conductive layer 7.
  • the first ohmic metal 11 is formed along the second PN junction 10.
  • the second ohmic metal 12 is made of, for example, AuZn—Au or AuBe—Au.
  • the second ohmic metal 12 is formed in a block shape on the P-type conductive layer 8 and is in ohmic contact with the P-type conductive layer 8.
  • the second ohmic metal 12 is formed along the second PN junction 10.
  • the first ohmic metal 11 and the second ohmic metal 12 are in contact with each other on the second PN junction 10.
  • the electrode layer 13 is made of, for example, Ni—Au, Cr—Au, Ti—Pt—Au.
  • the electrode layer 13 is composed of a first electrode layer 13A and a second electrode layer 13B.
  • the first electrode layer 13 ⁇ / b> A is formed so as to cover the first ohmic metal 11 and the second ohmic metal 12.
  • the first electrode layer 13 ⁇ / b> A electrically connects the first ohmic metal 11 and the second ohmic metal 12.
  • the first electrode layer 13 ⁇ / b> A short-circuits the second PN junction 10 in cooperation with the first ohmic metal 11 and the second ohmic metal 12.
  • the second electrode layer 13B is formed on the folded portion of the PN semiconductor layer 3 extending in a meandering manner.
  • the second electrode layer 13B is formed on the N-type conductive layer 7 in the PN semiconductor layer 3.
  • the second electrode layer 13 ⁇ / b> B is formed in a U shape along the PN semiconductor layer 3.
  • One end of the second electrode layer 13 ⁇ / b> B is connected to the first ohmic metal 11 and the second ohmic metal 12 across the second PN junction 10.
  • the other end of the second electrode layer 13B is connected to the first ohmic metal 11 formed in front of the first PN junction 9.
  • the terminal electrode 5 is made of the same material as the electrode layer 13 and is formed on one end E1 of the PN semiconductor layer 3. A part of the terminal electrode 5 protrudes linearly along the extending direction of the PN semiconductor layer 3 and is connected to the first electrode layer 13A.
  • the terminal electrode 6 is made of the same material as the electrode layer 13, and is formed on one end E ⁇ b> 2 of the PN semiconductor layer 3. A part of the terminal electrode 6 protrudes linearly along the extending direction of the PN semiconductor layer 3, and its tip is located in front of the first PN junction 9.
  • the terminal electrode 5 and the terminal electrode 6 are connected to a lead wire or the like, and function as a bonding pad for taking out a potential change caused by the electric charge generated in the first PN junction 9 by the incidence of infrared rays.
  • the terminal electrode 5 and the terminal electrode 6 are formed in a substantially rectangular shape so as to have a sufficient area for functioning as a bonding pad.
  • Each part of the PN semiconductor layer 3 extending in a meandering manner on the main surface A is partitioned by a groove 15 formed on the main surface A of the substrate 2.
  • This groove 15 is formed by selectively removing a part of the PN semiconductor layer 3 by mesa etching or trench etching to expose the main surface A of the substrate 2 (the main surface A is the same as the bottom surface of the groove 15). Become).
  • the groove 15 is formed so as to surround the PN semiconductor layer 3. Further, the groove 15 is formed so as to separate and partition adjacent portions on the substrate 2 in the PN semiconductor layer 3 extending in a meandering manner. Further, the groove 15 separates the PN semiconductor layer 3 from the outer frame portion W extending along the outer edge of the main surface A.
  • the outer frame portion W is composed of an N-type conductive layer 7 and a P-type conductive layer 8. In the present embodiment, all the parts of the PN semiconductor layer 3 are adjacent to each other except the part facing the outer frame portion W on the substrate 2.
  • a passivation layer 16 for protecting the PN semiconductor layer 3 and the intermediate electrode 4 is formed on the main surface A of the substrate 2 (FIG. 2).
  • the passivation layer 16 is made of, for example, SiN or Al 2 O 3 .
  • openings T1 and T2 for exposing the terminal electrodes 5 and 6 to the outside are formed in the passivation layer 16.
  • the passivation layer 16 covers the entire main surface A of the substrate 2 except for the openings T1 and T2.
  • FIGS. 3, 4, 6, 7, 8, 10, and 12 are schematic views for explaining the manufacturing method.
  • Other drawings, terminal electrodes 5, and openings T ⁇ b> 1 are illustrated. The shape is different.
  • a region (a) is a cross-sectional view for explaining a step of forming an N-type conductive layer
  • a region (b) is for explaining a step of forming an N-type conductive layer.
  • FIG. 4 a region (a) is a cross-sectional view for explaining a step of forming a P-type conductive layer
  • a region (b) is a plan view for explaining a step of forming a P-type conductive layer.
  • FIG. 5 is a plan view showing a P-type conductive layer formed in the step of FIG. In FIG.
  • the region (a) is a cross-sectional view for explaining the step of forming the first ohmic metal
  • the region (b) is a plane for explaining the step of forming the first ohmic metal.
  • FIG. 7 a region (a) is a cross-sectional view for explaining the step of forming the second ohmic metal
  • a region (b) is a plane for explaining the step of forming the second ohmic metal.
  • FIG. 8 a region (a) is a cross-sectional view for explaining the step of forming the electrode layer
  • a region (b) is a plan view for explaining the step of forming the electrode layer.
  • FIG. 9 is a partial plan view showing the electrode layer formed in the step of FIG. FIG.
  • FIG. 10 is a plan view for explaining a step of forming a groove.
  • FIG. 11 is a plan view showing grooves formed in the process of FIG.
  • a region (a) is a cross-sectional view for explaining a step of forming a passivation layer, and a plan view for explaining a step of forming the passivation layer.
  • the region (a) is a cross-sectional view for explaining the step of forming the opening
  • the region (b) is a plan view for explaining the step of forming the opening.
  • FIG. 14 is a plan view showing the opening formed in the step of FIG.
  • This conductive layer forming step includes an N-type conductive layer forming step and a P-type conductive layer forming step.
  • the N-type conductive layer 7 is formed on the main surface A of the semi-insulating substrate 2 by epitaxial growth. N-type conductive layer 7 is formed over the entire main surface A.
  • P-type conductive layers 8 are respectively formed at a plurality of locations of the N-type conductive layer 7 by thermal diffusion or ion implantation. At this time, each P-type conductive layer 8 is formed so as to be all P-type in the thickness direction until reaching the main surface A of the substrate 2. In addition, as shown in FIG. 5, each P-type conductive layer 8 is formed to extend in the width direction of the substrate 2. Further, each P-type conductive layer 8 is formed in a stripe shape so as to be alternately arranged with the N-type conductive layer 7 in the longitudinal direction of the substrate 2.
  • the intermediate electrode forming step includes a first ohmic metal forming step, a second ohmic metal forming step, and an electrode layer forming step.
  • first ohmic metal 11 is formed on each N-type conductive layer 7.
  • the first ohmic metal 11 extends along a portion planned as the second PN junction portion 10 among the PN junction portions formed between the N-type conductive layer 7 and the P-type conductive layer 8 adjacent to each other. It is formed.
  • block-shaped second ohmic metal 12 is formed on each P-type conductive layer 8.
  • the second ohmic metal 12 is formed along the PN junction so as to come into contact with the first ohmic metal 11.
  • the first electrode layer 13A and the second electrode layer 13B are formed.
  • the first electrode layer 13 ⁇ / b> A is formed so as to cover the first ohmic metal 11 and the second ohmic metal 12.
  • the second electrode layer 13B is formed in a region planned as a folded portion of the PN semiconductor layer 3 extending in a meandering manner.
  • the terminal electrode forming step is executed simultaneously with the electrode layer forming step.
  • terminal electrodes 5 and 6 are formed on the N-type conductive layer 7.
  • the terminal electrode 5 is formed in a region planned as the end E1 of the PN semiconductor layer 3. Further, the terminal electrode 5 is formed in a region planned as the end E ⁇ b> 2 of the PN semiconductor layer 3.
  • a groove forming step is performed.
  • the groove 15 is formed by selectively removing the N-type conductive layer 7 and the P-type conductive layer 8 until the main surface A of the substrate 2 is exposed by mesa etching or trench etching.
  • the PN semiconductor layer 3 is processed in a meandering manner by partitioning each part by the groove 15.
  • the PN semiconductor layer 3 is also partitioned from the outer frame portion W by the grooves 15.
  • a passivation layer forming step is performed.
  • the passivation layer 16 is formed on the main surface A side of the substrate 2.
  • an opening forming step is performed.
  • openings T1 and T2 for exposing the terminal electrodes 5 and 6 to the outside are formed in the passivation layer 16.
  • the infrared detection element 1 is obtained by executing the steps shown in FIGS. 3 to 14.
  • the execution order of the intermediate electrode forming process, the terminal electrode forming process, and the groove forming process is not limited to the order described above, and these processes are performed in other orders between the conductive layer forming process and the passivation layer forming process. May be executed.
  • the sensitivity is determined by the number of PN junctions per unit area. For this reason, when the intermediate electrode 4 is formed, it is not necessary to consider the aperture ratio (the area ratio of the effective sensitivity region to the infrared light receiving region), and the degree of design freedom is improved. Moreover, since the intermediate electrode 4 is formed on the upper surface of the PN semiconductor layer 3 without a step, it does not cross the groove 15. Therefore, formation of the intermediate electrode 4 becomes easy and there is no fear of disconnection.
  • the intermediate electrode 4 is formed with high accuracy, and as a result, the yield of the infrared detection element obtained through the above steps can be improved. Further, since the intermediate electrode 4 is formed before the passivation layer 16 is formed, there is no need to form a contact hole in the passivation layer 16 for connection to the PN junction. This contributes to simplification and speeding up of the manufacturing process. Furthermore, in the infrared detection element 1, by processing the PN semiconductor layer 3 in a meandering manner by the grooves 15, it becomes possible to densely arrange a large number of PN junctions with a simple configuration. Therefore, the infrared detection element 1 can improve the yield of the infrared detection element and increase the number of PN junctions per unit area. That is, according to the present embodiment, it is possible to improve the sensitivity of the infrared detection element, so that the reliability is dramatically improved.
  • the outer edge of the first PN junction 9 is exposed. Therefore, it is not necessary to adopt a back-illuminated structure in which infrared rays are incident from the back surface of the substrate, and a front-illuminated structure can be realized. In this case, flip-chip connection by through bumps and through electrodes that are necessary in the back-illuminated structure are unnecessary, which is advantageous in reducing the cost of the infrared detection element.
  • FIGS. 15 to 21 is a plan view showing an infrared detection element according to another embodiment. 16 to 21, only the PN semiconductor layers 33 to 83, the terminal electrodes 31 to 81, and the terminal electrodes 32 to 82 are shown as the infrared detecting elements 30 to 80 according to other embodiments. Since this configuration is the same as the configuration shown in FIGS. 1 and 2, it is not shown.
  • the PN semiconductor layer 3 on the substrate 2 is exposed. Even if the area (the area of the infrared light receiving region) is extremely narrow compared to the area of the intermediate electrode 23 (the area of the first electrode layer 24A and the second electrode layer 24B) and the area of the terminal electrodes 21, 22. Good.
  • the infrared detection element 20 Since the sensitivity of the infrared detection element 20 according to the present invention is determined by the number of PN junctions per unit area regardless of the aperture ratio, the infrared detection element 20 has the same sensitivity as the infrared detection element 1 described above. Obtainable. Therefore, according to the infrared detection element 20 according to the present invention, by reducing the area of the PN semiconductor layer 3 while exposing the first PN junction 9, the infrared detection element can be reduced in size while ensuring sufficient sensitivity. It becomes possible to plan. In addition, since the area of the intermediate electrode 23 that is difficult to miniaturize can be secured relatively large, the formation of the intermediate electrode 23 is further facilitated. As a result, it is possible to improve the yield of the infrared detection element.
  • the infrared detecting element according to the present invention is not limited to the meandering PN semiconductor layer, and any shape of the PN semiconductor layer can be adopted as long as it can be expressed on the substrate by one-stroke writing.
  • FIGS. 16 to 21 show examples of the shape of the PN semiconductor layer. 16 to 21, the PN semiconductor layer is represented as a line in which rectangular terminal electrodes are connected to both ends. Therefore, the first PN junction that forms part of the effective sensitivity region with respect to infrared rays and the second PN junction that forms part of the intermediate electrode installation region follow the line illustrated as the PN semiconductor layer. They are lined up alternately. Adjacent portions of the PN semiconductor layer are partitioned by grooves not shown. C shown in FIGS. 16 to 21 indicates the central portion of the main surface on one side of the substrate.
  • the infrared detection element 30 shown in FIG. 16 includes a PN semiconductor layer 33 extending in a spiral shape.
  • the terminal electrodes 31 and 32 of the infrared detection element 30 are formed on the substrate and outside the PN semiconductor layer 33.
  • the infrared detection element 40 shown in FIG. 17 includes a PN semiconductor layer 43 that extends in a spiral shape.
  • One terminal electrode 41 of the infrared detection element 40 is formed on the substrate and outside the PN semiconductor layer 43.
  • the other terminal electrode 42 is formed inside the PN semiconductor layer 43 and at the center C of the main surface of the substrate.
  • the infrared detection element 50 shown in FIG. 18 includes a PN semiconductor layer 53 extending in a rectangular spiral shape.
  • the terminal electrodes 51 and 52 of the infrared detection element 50 are formed on the substrate and outside the PN semiconductor layer 53.
  • the infrared detection element 60 shown in FIG. 19 includes a PN semiconductor layer 63 extending so as to draw a set of rectangular spirals. A set of spirals drawn by the PN semiconductor layer 63 is formed rotationally symmetric about the central portion C of the substrate main surface.
  • the terminal electrodes 61 and 62 of the infrared detection element 60 are formed on the outside of the PN semiconductor layer 63 at positions that are rotationally symmetric with respect to the center portion C of the substrate main surface.
  • the 20 includes a PN semiconductor layer 73 extending in a polygonal spiral shape.
  • the terminal electrodes 71 and 72 of the infrared detection element 70 are formed on the substrate and outside the PN semiconductor layer 73.
  • the infrared detection element 80 shown in FIG. 21 includes a PN semiconductor layer 83 extending in a polygonal spiral shape. The spiral drawn by the PN semiconductor layer 83 is formed so as to pass through the center C of the main surface of the substrate.
  • the terminal electrodes 81 and 82 of the infrared detecting element 80 are formed outside the PN semiconductor layer 83 and at positions that are rotationally symmetric with respect to the central portion C of the substrate main surface.
  • the intermediate electrode 4 includes the first ohmic metal 11 and the second ohmic metal 12 in order to obtain good ohmic contact with the N-type conductive layer 7 and the P-type conductive layer 8. It was. However, the N-type conductive layer 7 and the P-type conductive layer 8 may be directly connected without using an ohmic metal. In this case, the intermediate electrode 4 is made of, for example, Ni—Au.

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

L'invention concerne un élément de détection infrarouge d'une grande fiabilité et un procédé pour la fabrication de l'élément. L'élément de détection infrarouge (1) est doté d'un substrat (2), d'une couche semi-conductrice PN (3), d'une électrode intermédiaire (4), et d'électrodes terminales (5, 6). Chaque partie de la couche semi-conductrice PN (3) est divisée au moyen de rainures (15) de telle manière que les paires de premières et de secondes parties de jonction PN (9, 10) adjacentes soient agencées alternativement et s'étendent linéairement le long de la surface principale (A) du substrat (2). L'électrode intermédiaire (4) est disposée sur le côté de la couche semi-conductrice PN (3), c'est-à-dire le côté opposé sur lequel se trouve le substrat (2), dans un état dans lequel l'électrode intermédiaire est en contact avec la seconde partie de jonction PN (10), alors que la première partie de jonction PN (9) est exposée. Les électrodes terminales (5, 6) sont les électrodes pour produire un changement de potentiel dû aux charges générées au moyen de la première partie de jonction PN (9) quand des rayons infrarouges sont émis et les électrodes terminales sont disposées sur les deux parties d'extrémité (E1, E2) de la couche semi-conductrice PN (3) s'étendant linéairement le long de la surface principale (A) du substrat (2).
PCT/JP2010/059518 2009-06-16 2010-06-04 Elément de détection infrarouge et procédé de fabrication associé WO2010147006A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009143312A JP2011003588A (ja) 2009-06-16 2009-06-16 赤外線検出素子及びその製造方法
JP2009-143312 2009-06-16

Publications (1)

Publication Number Publication Date
WO2010147006A1 true WO2010147006A1 (fr) 2010-12-23

Family

ID=43356327

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/059518 WO2010147006A1 (fr) 2009-06-16 2010-06-04 Elément de détection infrarouge et procédé de fabrication associé

Country Status (2)

Country Link
JP (1) JP2011003588A (fr)
WO (1) WO2010147006A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2942609A1 (fr) * 2014-05-07 2015-11-11 ams AG Bolomètre et procédé de mesure de rayonnement électromagnétique

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108881533B (zh) * 2018-06-06 2020-09-11 北京小米移动软件有限公司 终端设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134774A (fr) * 1974-04-15 1975-10-25
JPS63226075A (ja) * 1986-10-08 1988-09-20 Nippon Denso Co Ltd 半導体装置及びその製造方法
JPH05175537A (ja) * 1991-12-20 1993-07-13 Rohm Co Ltd フォトダイオードアレイおよびその製造法
JP2002148111A (ja) * 2000-11-15 2002-05-22 Mitsubishi Electric Corp 熱型赤外線検出器
JP2007081225A (ja) * 2005-09-15 2007-03-29 Asahi Kasei Electronics Co Ltd 赤外線センサ、および、その製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066584A (ja) * 2006-09-08 2008-03-21 Asahi Kasei Electronics Co Ltd 光センサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134774A (fr) * 1974-04-15 1975-10-25
JPS63226075A (ja) * 1986-10-08 1988-09-20 Nippon Denso Co Ltd 半導体装置及びその製造方法
JPH05175537A (ja) * 1991-12-20 1993-07-13 Rohm Co Ltd フォトダイオードアレイおよびその製造法
JP2002148111A (ja) * 2000-11-15 2002-05-22 Mitsubishi Electric Corp 熱型赤外線検出器
JP2007081225A (ja) * 2005-09-15 2007-03-29 Asahi Kasei Electronics Co Ltd 赤外線センサ、および、その製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2942609A1 (fr) * 2014-05-07 2015-11-11 ams AG Bolomètre et procédé de mesure de rayonnement électromagnétique
US10234332B2 (en) 2014-05-07 2019-03-19 Ams Ag Bolometer and method for measurement of electromagnetic radiation

Also Published As

Publication number Publication date
JP2011003588A (ja) 2011-01-06

Similar Documents

Publication Publication Date Title
US7041978B2 (en) Photovoltaic infrared radiation detector with independent three-dimensional conducting grid
JP5983076B2 (ja) フォトダイオードアレイ
JP6436424B2 (ja) 太陽電池セルおよび太陽電池セルの製造方法
EP3540788B1 (fr) Dispositif de réception de lumière et procédé de fabrication du dispositif de réception de lumière
JP2007081225A (ja) 赤外線センサ、および、その製造方法
KR100670828B1 (ko) 적외선 레이저 레이다의 영상 신호를 검출하기 위한 광검출기 및 그 제조방법
US8274127B2 (en) Photodiode array for image pickup device
US8399820B2 (en) Multicolor detectors and applications thereof
TW475273B (en) Light-receiving element array and light-receiving element array chip
JP7454917B2 (ja) 光検出装置
WO2010147006A1 (fr) Elément de détection infrarouge et procédé de fabrication associé
JP5085122B2 (ja) 半導体光検出素子及び放射線検出装置
WO2021131758A1 (fr) Photodétecteur à semi-conducteur
KR20190085786A (ko) 화합물 태양전지 모듈
JP2014003069A (ja) 受光素子、その製造方法、および光学装置
JP4335104B2 (ja) ホトダイオードアレイおよび分光器
JP7109718B2 (ja) 化合物半導体フォトダイオードアレイ
JP5474662B2 (ja) 半導体受光素子
JP6849900B2 (ja) 検出素子及び検出器
US20230369365A1 (en) Light receiving element array and manufacturing method therefor
US11674850B1 (en) Continuous full-resolution two-color infrared detector
JP5139923B2 (ja) 半導体受光素子
US11411040B2 (en) Methods for fabricating mechanically stacked multicolor focal plane arrays and detection devices
WO2022270301A1 (fr) Réseau de photodiodes à avalanche
US20240234463A9 (en) Active pixel sensor and method for fabricating an active pixel sensor

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10789381

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10789381

Country of ref document: EP

Kind code of ref document: A1