WO2010143475A1 - 圧電デバイスの製造方法 - Google Patents
圧電デバイスの製造方法 Download PDFInfo
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- WO2010143475A1 WO2010143475A1 PCT/JP2010/057209 JP2010057209W WO2010143475A1 WO 2010143475 A1 WO2010143475 A1 WO 2010143475A1 JP 2010057209 W JP2010057209 W JP 2010057209W WO 2010143475 A1 WO2010143475 A1 WO 2010143475A1
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/06—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of magnetostrictive resonators or networks
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- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
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- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N30/88—Mounts; Supports; Enclosures; Casings
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Definitions
- the present invention relates to a method for manufacturing a piezoelectric device using a piezoelectric single crystal thin film, particularly a piezoelectric device having a membrane structure.
- a piezoelectric device using such a piezoelectric thin film requires a support for supporting the piezoelectric thin film during actual use. And such a support body is arrange
- FIG. At this time, the support structure is arranged on almost the entire surface of one main surface, and only in the region that does not function as a piezoelectric device, and the support member is not disposed only in the region that functions as a piezoelectric device.
- a support is provided.
- a structure in which the support is provided only in a region that does not function as a piezoelectric device is called a so-called membrane structure.
- this membrane structure conventionally, there is a method in which a support is once bonded to the entire main surface of a piezoelectric body, and only a region functioning as a piezoelectric device is removed by etching or the like.
- the above-described removal method does not affect the piezoelectric body only in a necessary region, and it is not easy to completely remove the support body. For this reason, as shown in Japanese Patent Application No. 2008-282567, the applicant provided a recess in the support and filled the sacrificial layer material in the recess so that the sacrificial layer material was easily removed.
- a method has been devised in which the support is bonded to the piezoelectric body so as to face the functional portion, and the sacrificial layer material is removed after the bonding. In this method, a hollow membrane structure can be realized more easily than in the past.
- this method ensures sufficient flatness of the joining surface of the support filled with the sacrificial layer material. If treatment is not performed, the piezoelectric material surface will receive a large amount of stress directly from the projections of the support during bonding, causing crystallinity destruction of the piezoelectric material and reducing the function of the piezoelectric device. It cannot be said that it is not sex.
- an object of the present invention is to provide a method for manufacturing a piezoelectric device that can prevent a crystalline fracture that occurs in a functional part of the piezoelectric device with an easy method and a membrane structure.
- the present invention relates to a method of manufacturing a piezoelectric device including a piezoelectric thin film and a support that supports the piezoelectric thin film.
- This method for manufacturing a piezoelectric device includes at least an ion implantation process, a sacrificial layer forming process, a support forming process, a peeling process, and a sacrificial layer removing process.
- an ion implantation layer is formed by implanting ions into the piezoelectric substrate.
- a sacrificial layer is formed on the surface of the piezoelectric substrate on the side of the ion implantation layer, for example, by vacuum film formation.
- the support forming step a support is formed on the surface of the piezoelectric substrate on the ion implantation layer side.
- the peeling step the piezoelectric thin film is peeled from the piezoelectric substrate on which the ion implantation layer is formed.
- the sacrificial layer removal step the sacrificial layer is removed.
- a sacrificial layer is directly formed on the surface of the piezoelectric substrate on the side to be a piezoelectric thin film by vacuum film formation. Therefore, since the process which joins the area
- the support body forming step is executed after the sacrificial layer forming step.
- a support body formation process has the support layer formation process which forms a support layer so that a sacrificial layer may be covered, and the support base material joining process which joins a support base material with respect to this support layer.
- This manufacturing method specifically shows the manufacturing method of the sacrificial layer and the support described above. Then, after the sacrificial layer is formed in this way, a support layer is formed so as to cover the sacrificial layer, and the support base material is joined, so that the support base material is joined only to the support layer. Therefore, the joining process becomes easy.
- the sacrificial layer can be stably formed by joining the sacrificial layer to the position of the sacrificial layer without performing later-described planarization treatment, variations in the characteristics of the piezoelectric device can be suppressed. That is, it is possible to reduce factors in the manufacturing process that cause characteristic variation, and to easily suppress characteristic variation.
- the support body forming step includes a support layer forming step of forming a support layer in a region other than the region where the sacrificial layer is formed before the sacrificial layer forming step, and a sacrificial layer forming step. And a support base material joining step of joining the support base material to the sacrificial layer and the support layer.
- This manufacturing method also specifically shows the manufacturing method of the above-described sacrificial layer and support. And when the sacrificial layer is formed after forming the support layer by providing the partial exclusion region in this way and the support base material is joined, the hollow shape of the membrane can be stabilized if the joining surface is the surface of the support layer. Can be formed. Thereby, it is possible to easily suppress variation in characteristics caused by forming the membrane.
- the method for manufacturing a piezoelectric device according to the present invention includes a flattening process for flattening the surface of the support layer on the support base material side.
- the support layer is planarized and bonded, the bonding strength between the support layer and the support base material is improved, and a highly reliable piezoelectric device can be manufactured.
- the sacrificial layer is made of a material that can be easily removed as compared with the piezoelectric substrate and the support.
- the sacrificial layer is formed in the space between the support and the piezoelectric substrate so as to be in contact with the support and the piezoelectric substrate, the sacrificial layer is suppressed. Can be easily and reliably removed.
- the method for manufacturing a piezoelectric device includes an electrode forming step of forming an electrode for device function on the surface of the piezoelectric substrate on the ion implantation layer side between the ion implantation step and the sacrificial layer forming step.
- This manufacturing method shows the case where each of the manufacturing methods described above is applied to a piezoelectric device having an electrode on the hollow side of the membrane, and stress is applied to the piezoelectric film during manufacturing even with such a piezoelectric device. Can be prevented.
- the sacrificial layer is made of a material that can be easily removed as compared with the piezoelectric substrate, the support, and the electrode for device function.
- the piezoelectric device manufacturing method of the present invention includes a reinforcing layer forming step of forming a piezoelectric thin film reinforcing layer on the surface of the piezoelectric substrate on the side of the ion implanting layer between the ion implantation step and the sacrificial layer forming step.
- This manufacturing method shows a case where each of the manufacturing methods described above is applied to a piezoelectric device having a piezoelectric thin film reinforcing layer on the hollow side of the membrane. Even in a piezoelectric device having such a configuration, stress is applied to the piezoelectric film during manufacturing. Can be prevented from being added. Furthermore, by using the piezoelectric thin film reinforcing layer, it is possible to prevent the sacrificial layer material from diffusing into the piezoelectric thin film during heat treatment or the like during the manufacturing process.
- the sacrificial layer is made of a material that can be easily removed as compared with the piezoelectric thin film reinforcing layer.
- the sacrificial layer even if the sacrificial layer is formed in the space between the support and the piezoelectric thin film reinforcement layer so as to be in contact with the support and the piezoelectric thin film reinforcement layer, the sacrificial layer has an adverse effect on the support and the piezoelectric thin film reinforcement layer. And the sacrificial layer can be removed easily and reliably.
- the present invention when a piezoelectric device having a membrane structure is manufactured, it is possible to reliably prevent the occurrence of stress locally applied to the functional part of the piezoelectric device by an easy method. As a result, it is possible to prevent the crystalline breakage occurring in the functional part and to prevent the deterioration of the characteristics of the piezoelectric device manufactured by the manufacturing method.
- a method for manufacturing a piezoelectric device according to the first embodiment of the present invention will be described with reference to the drawings.
- a thin film type piezoelectric device for F-BAR using a piezoelectric thin film will be described as an example of the piezoelectric device.
- FIG. 1 is a flowchart showing a method for manufacturing a piezoelectric device according to this embodiment.
- 2 to 4 are diagrams schematically showing a manufacturing process of the piezoelectric device formed by the manufacturing flow shown in FIG.
- a piezoelectric single crystal substrate 1 having a predetermined thickness is prepared, and as shown in FIG. 2A, hydrogen ions are implanted from the back surface 12 side to form an ion implantation layer 100 (FIG. 1: S101).
- a multi-state substrate in which a plurality of thin film piezoelectric devices are arranged is used as the piezoelectric single crystal substrate 1.
- hydrogen ions are implanted at an acceleration energy of 150 KeV and a dose of 1.0 ⁇ 10 17 atoms / cm 2 , so that a position about 1 ⁇ m deep from the back surface 12 is obtained.
- the piezoelectric single crystal substrate 1 includes an LN substrate, an LBO (Li 2 B 4 O 7 ) substrate, a langasite (La 3 Ga 5 SiO 14 ) substrate, a KN (KNbO 3 ) substrate, a KLN ( K 3 Li 2 Nb 5 O 15 ) substrates may be used, and ion implantation is performed under conditions corresponding to the respective substrates.
- a lower electrode 20 for driving as an F-BAR device having a predetermined thickness using Al (aluminum) or the like, and routing is performed on the back surface 12 of the piezoelectric single crystal substrate 1.
- An electrode (not shown) is formed (FIG. 1: S102).
- the lower electrode 20 not only Al but also W, Mo, Ta, Hf, Cu, Pt, Ti or the like may be used alone or in combination according to the specifications of the device, and Cu is used for the lead electrode. It may be used.
- a sacrificial layer 30 is formed on the back surface 12 on the ion implantation layer 100 side of the piezoelectric single crystal substrate 1 (FIG. 1: S103).
- the sacrificial layer 30 is made of a material that can select an etching gas or an etchant that can have an etching rate different from that of the lower electrode 20, and is made of a material that is more easily etched than the lower electrode 20.
- the sacrificial layer 30 is made of a material that is more easily etched than the support layer 40 and the piezoelectric single crystal substrate 1 described later. Furthermore, it is better that the sacrificial layer 30 is made of a material resistant to electromigration.
- the sacrificial layer 30 is formed by stacking by vapor deposition, sputtering, CVD, or the like, or by spin coating or the like, and is formed in at least a functional portion as an F-BAR device, that is, a predetermined region including at least the lower electrode 20. .
- the support layer 40 is formed on the back surface 12 of the sacrificial layer 30 of the piezoelectric single crystal substrate 1 (FIG. 1: S104).
- the support layer 40 is made of an insulating material and uses an inorganic material such as silicon oxide, nitride, aluminum oxide, or PSG, or an organic material such as a resin, and is used as an etching gas or an etchant for removing the sacrificial layer 30. Any material having strong resistance to the surface may be used.
- the material of the support layer 40 is better determined with respect to the piezoelectric single crystal substrate 1 and the sacrificial layer 30 in consideration of the linear expansion coefficient.
- the support layer 40 is also laminated by vapor deposition, sputtering, CVD, or the like, or formed by spin coating or the like, and is formed on the entire back surface 12 with a predetermined thickness.
- the surface of the support layer 40 is planarized by CMP or the like (FIG. 1: S105).
- the polishing amount may be set as appropriate. Thereby, the restraint conditions of a grinding
- the support layer 40 and the support base material 50 are joined (FIG. 1: S106).
- the portion composed of the support layer 40 and the support base material 50 corresponds to the “support” of the present invention.
- the support base material 50 uses Si, glass, ceramics such as alumina, or the like.
- Clean bonding is a bonding method in which Ar ions or the like are irradiated in a vacuum and the bonding surfaces are activated, and does not require heating.
- the piezoelectric single crystal substrate 1 is heated to perform separation using the ion implantation layer 100 as a separation surface (FIG. 1: S107).
- the piezoelectric thin film 10 supported by the support body having the sacrificial layer 30 is formed.
- the heating temperature can be lowered by heating in a reduced pressure atmosphere.
- the surface 13 of the piezoelectric thin film 10 thus peeled and formed is polished and flattened by a CMP process or the like.
- upper electrode patterns such as an upper electrode 60 and a bump pad 61 for driving as an F-BAR device are formed on the surface 13 of the piezoelectric thin film 10 (FIG. 1: S108).
- an etching window 71 for removing the sacrificial layer 30 is formed on the surface 13 of the piezoelectric thin film 10 on which the surface electrode pattern is formed (FIG. 1: S109).
- the sacrificial layer 30 is removed by flowing an etching gas or an etchant through the etching window 71. Thereby, the space in which the sacrificial layer 30 corresponding to the region where the lower electrode 20 and the upper electrode 60 of the piezoelectric device are formed becomes a depletion layer 80 as shown in FIG. 4A (FIG. 1: S110). ).
- a finished surface electrode pattern is formed by forming bumps 90 on the bump pads 61 (FIG. 1: S111). In this way, a piezoelectric device is formed.
- the sacrificial layer 30 and the support layer 40 are formed directly on the back surface 12 of the piezoelectric single crystal substrate 1. Therefore, the sacrificial layer 30 and the support layer 40 can be formed without using a bonding process. It can be disposed on the back surface 12 of the piezoelectric single crystal substrate 1.
- the membrane part serving as the piezoelectric functional part is protected by the sacrificial layer, so that the local area from the convex part of the support Piezoelectric crystal breakage due to large stress does not occur. Thereby, characteristic deterioration of the piezoelectric device manufactured by the manufacturing method can be prevented.
- the formation method of the sacrificial layer 30 is improved by using the method of forming the support layer 40 so as to cover the sacrificial layer 30 as described above, and polishing the support layer 40 and bonding it to the support base material 50. Since the hollow region of the membrane composed of the depletion layer 80 can be made constant, it is possible to easily suppress the characteristic variation of the piezoelectric device.
- FIG. 5 is a flowchart showing a method for manufacturing the thin film piezoelectric device of the present embodiment.
- FIG. 6 is a diagram schematically showing only the characteristic part of the manufacturing process of the thin film piezoelectric device formed by the manufacturing flow shown in the present embodiment.
- the method for manufacturing a piezoelectric device includes steps related to a method for forming the sacrificial layer 30 and the support layer 40 and a method for bonding the support base material 50 to the method for manufacturing the piezoelectric device shown in the first embodiment. Since they are different, only S203 to S206 in FIG. 5 corresponding to the process will be described. Note that S201, S202, and S207 to S211 are the same as S101, S102, and S107 to S111 shown in the first embodiment, respectively, and thus description thereof is omitted.
- a support layer 40 is formed on the back surface 12 of the piezoelectric single crystal substrate 1 on which the lower electrode 20 and the routing electrode (not shown) are formed (FIG. 5: S203). At this time, the support layer 40 is formed in a region excluding a region where the sacrificial layer 30 is formed in the next step. Furthermore, the height of the support layer 40 is set according to the depth of the depletion layer 80 that constitutes the hollow region of the membrane. The material and forming method of the support layer 40 are the same as those in the first embodiment.
- a sacrificial layer 30 is formed so as to cover the back surface 12 of the piezoelectric single crystal substrate 1 and the surface of the support layer 40 (FIG. 5: S204).
- the material and formation method of the sacrificial layer 30 are the same as those in the first embodiment.
- the sacrificial layer 30 is deleted until the surface of the support layer 40 is exposed (FIG. 5: S205).
- Deletion of the sacrificial layer 30 may be set as appropriate, such as etching and polishing, as long as the method can selectively delete only the sacrificial layer 30 without deleting the support layer 40.
- the depletion layer 80 serving as a membrane can be formed in a stable shape. Thereby, it is possible to easily suppress variation in characteristics due to the formation of the membrane.
- a thin-film reinforcing layer may be disposed between the back surface 12 and the lower electrode 20 of the substrate and the sacrificial layer 30 and the support layer 40.
- an insulating material such as SiN, SiO 2 , DLC, Ta 2 O 5 is used as the thin film reinforcing layer.
- the effects of the manufacturing method in which the sacrificial layer 30 and the support layer 40 are directly formed without bonding can be obtained as in the above-described embodiments. Furthermore, by using the thin film reinforcing layer, it is possible to prevent the sacrificial layer 30 from diffusing into the piezoelectric single crystal substrate 1 due to heat treatment or the like during the manufacturing process, and it is possible to prevent deterioration of the characteristics of the piezoelectric device. At this time, the thin film reinforcing layer may be disposed on the surface 13 side of the piezoelectric thin film 10, and the strength of the membrane can be appropriately reinforced by these thin film reinforcing layers, and stress due to unnecessary strain or the like is generated. Can be prevented.
- the F-BAR piezoelectric device has been described as an example.
- the manufacturing method of the present invention can be applied to other piezoelectric devices.
- the production method of the present invention is particularly effective for Lamb wave devices and plate wave devices in which the surface roughness, thickness uniformity, piezoelectricity, and crystallinity of the membrane have a great influence on the frequency characteristics.
- the manufacturing method of the present invention is also effective for various devices made of a piezoelectric single crystal thin film, such as pyroelectric sensors, gyros, RF switches, magnetic sensors, and vibration power generation elements, and having membranes.
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Abstract
Description
図2~図4は、図1に示す製造フローで形成される圧電デバイスの製造過程を模式的に示す図である。
図5は、本実施形態の薄膜型圧電デバイスの製造方法を示すフローチャートである。
図6は、本実施形態に示す製造フローで形成される薄膜型圧電デバイスの製造過程の特徴箇所のみを模式的に示す図である。
Claims (9)
- 圧電薄膜と該圧電薄膜を支持する支持体とを備えた圧電デバイスの製造方法であって、
圧電基板にイオンを注入することで、イオン注入層を形成するイオン注入工程と、
前記圧電基板のイオン注入層側の表面に犠牲層を形成する犠牲層形成工程と、
前記圧電基板のイオン注入層側の表面に支持体を形成する支持体形成工程と、
前記イオン注入層が形成された前記圧電基板から圧電薄膜を剥離形成する剥離工程と、
前記犠牲層を除去する犠牲層除去工程と、
を有する圧電デバイスの製造方法。 - 前記支持体形成工程は、前記犠牲層形成工程の後に実行され、
前記犠牲層を覆うように支持層を形成する支持層形成工程と、
該支持層に対して支持母材を接合する支持母材接合工程と、を有する請求項1に記載の圧電デバイスの製造方法。 - 前記支持体形成工程は、
前記犠牲層形成工程の前に、該犠牲層を形成する領域以外に支持層を形成する支持層形成工程と、
前記犠牲層形成工程の後に、前記犠牲層及び前記支持層に対して支持母材を接合する支持母材接合工程と、を有する請求項1に記載の圧電デバイスの製造方法。 - 前記支持層の前記支持母材側の表面を平坦化処理する平坦化処理工程を有する、請求項2または請求項3に記載の圧電デバイスの製造方法。
- 前記犠牲層は、前記圧電基板および前記支持体と比較して除去容易な材料からなる、請求項1~請求項4のいずれかに記載の圧電デバイスの製造方法。
- 前記イオン注入工程と前記犠牲層形成工程との間に、前記圧電基板のイオン注入層側の表面にデバイス機能用の電極を形成する電極形成工程を有する請求項1~請求項4のいずれかに記載の圧電デバイスの製造方法。
- 前記犠牲層は、前記圧電基板、前記支持体、および前記デバイス機能用の電極と比較して除去容易な材料からなる、請求項6に記載の圧電デバイスの製造方法。
- 前記イオン注入工程と前記犠牲層形成工程との間に、前記圧電基板のイオン注入層側の表面に圧電薄膜補強層を形成する補強層形成工程を有する、請求項1~請求項7のいずれかに記載の圧電デバイスの製造方法。
- 前記犠牲層は、前記圧電薄膜補強層と比較して除去容易な材料からなる請求項8に記載の圧電デバイスの製造方法。
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