WO2010140684A1 - 固定砥粒加工装置及び固定砥粒加工方法、並びに、半導体ウェーハ製造方法 - Google Patents
固定砥粒加工装置及び固定砥粒加工方法、並びに、半導体ウェーハ製造方法 Download PDFInfo
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- WO2010140684A1 WO2010140684A1 PCT/JP2010/059548 JP2010059548W WO2010140684A1 WO 2010140684 A1 WO2010140684 A1 WO 2010140684A1 JP 2010059548 W JP2010059548 W JP 2010059548W WO 2010140684 A1 WO2010140684 A1 WO 2010140684A1
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- fixed abrasive
- surface plate
- semiconductor wafer
- wafer
- fixed
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- 239000006061 abrasive grain Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000003754 machining Methods 0.000 title abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 76
- 230000033001 locomotion Effects 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 17
- 238000003672 processing method Methods 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 166
- 230000008569 process Effects 0.000 abstract description 23
- 238000000227 grinding Methods 0.000 description 58
- 239000010410 layer Substances 0.000 description 52
- 230000000052 comparative effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Definitions
- the present invention relates to a fixed abrasive processing apparatus and a fixed abrasive processing method used for manufacturing a semiconductor wafer, and a semiconductor wafer manufacturing method.
- a method as shown in FIGS. 15 and 16 is known as a method for manufacturing a semiconductor wafer (silicon wafer).
- the edge (periphery) of the wafer W is chamfered in the chamfering step S120.
- both surfaces of the plurality of wafers W are simultaneously lapped (batch-type lapping) with relatively coarse abrasive grains (free abrasive grains).
- the lapped wafer W is processed through an etching step S140 and a mirror polishing step S150 to become a final product.
- the wrapping step S130 will be described in detail.
- a wrapping apparatus 100 as shown in FIG. 17 is used.
- the lapping apparatus 100 is installed on the inner surface of the lower surface plate 101, a lower surface plate 101 having a support surface 101a facing upward, an upper surface plate 102 having a support surface 102a facing the support surface 101a of the lower surface plate 101 from above.
- the sun gear 103 is disposed between the sun gear 103 (the sun gear), the internal gear 104 installed on the outer peripheral side of the lower surface plate 101, and the support surface 101a of the lower surface plate 101 and the support surface 102a of the upper surface plate 102.
- a carrier plate 105 that meshes with the internal gear 104, and a wafer in which a slurry containing relatively coarse abrasive grains (free abrasive grains having a grain size of # 1000 to # 1500) is set in the hole 105a of the carrier plate 105.
- a slurry supply device 106 for supplying W.
- the sun gear 103 and the internal gear 104 cause the carrier plate 105 to perform a planetary motion so that the support surface 101a and the support surface 102a are moved from the slurry supply device 106.
- a plurality of wafers W set in the hole 105a are lapped simultaneously on the both sides by the loose abrasive grains supplied to.
- the wafer W is cut out by slicing the single crystal ingot in the slicing step S210.
- the front surface and the back surface of the wafer W are ground one by one and one by one (single-wafer grinding) with relatively coarse abrasive grains (fixed abrasive grains).
- the ground wafer W is processed through a chamfering process S230, an etching process S240, and a mirror polishing process S250 to become a final product.
- the grinding step S220 will be described in detail.
- a grinding apparatus 200 as shown in FIGS. 18A and 18B is used.
- the grinding apparatus 200 includes a turntable 201, a chuck 202 that is installed on the turntable 201 and vacuum-sucks the wafer W, a grindstone support 204 that faces the chuck 202 from above and has a grinding grindstone 203 fixed thereto, and a wafer.
- a grinding water supply device 205 that supplies grinding water to W is provided.
- the grinding wheel 203 is composed of abrasive grains having a particle size of, for example, # 300 to # 1000.
- the turntable 201 and the grindstone support 204 are relatively rotated, and the grinding wheel 203 is pressed against the surface of the wafer W while supplying the grinding water from the grinding water supply device 205.
- the front and back surfaces are ground one by one and one by one.
- the lapping device 100 and the grinding device 200 are disclosed in Patent Document 1.
- scratches may remain on the surface of the wafer W after mirror polishing. That is, since the lapping process S130 or the grinding process S220, which is a pre-process of mirror polishing, is processed with abrasive grains having a relatively coarse particle size, the scratch may not be completely removed by normal mirror polishing. For this reason, as shown in FIGS. 19 and 20, after the lapping step S130 or the grinding step S220 and before the mirror polishing step S150 or S250, the finish grinding step S135 or S225 is inserted and finish grinding is performed. Yes.
- finish grinding steps S135 and S225 for example, a grindstone having a particle size of # 2000 to # 8000 and relatively promoting self-generated blades, such as a resin bond grindstone, is used.
- the front surface and the back surface of the wafer W are finished one by one.
- the present invention has been devised in view of such problems, and a fixed abrasive processing apparatus and a fixed abrasive processing method capable of obtaining good flatness on the surface of a semiconductor wafer, and the number of steps are shortened.
- a fixed abrasive processing apparatus of the present invention is a fixed abrasive processing apparatus used in a semiconductor wafer manufacturing process, and is a horizontally installed disk-shaped lower surface plate, and the lower surface plate A lower fixed abrasive layer formed on the upper surface of the semiconductor wafer for grinding the front surface of the semiconductor wafer, a lower surface plate motor for rotating the lower surface plate about a rotation axis, and the lower surface plate disposed horizontally.
- a carrier circular motion device, the lower fixed abrasive And each said upper fixed abrasive layer, the grain size in the elastic body is characterized in that it is fixed in a state of being dispersed abrasive grains of less than 4 [mu] m.
- the surface pressure applied to the front and back surfaces of the semiconductor wafer by the lower surface plate and the upper surface plate is preferably 250 to 400 g / cm 2 .
- the concentration of the abrasive grains with respect to the elastic body is preferably 100 to 150.
- an intermediate layer that joins both the lower fixed abrasive layer and the upper surface of the lower surface plate and between the upper fixed abrasive layer and the lower surface of the upper surface plate is interposed.
- the thicknesses of the lower fixed abrasive layer and the upper fixed abrasive layer are preferably 100 to 2000 ⁇ m.
- the fixed abrasive processing method of the present invention is a fixed abrasive processing method using the above-described fixed abrasive processing apparatus, wherein the carrier plate is in a state where the upper surface plate is separated from the lower surface plate.
- a pressing step of pressing the abrasive grains of the upper fixed abrasive layer, and rotating the lower surface plate and the upper surface plate simultaneously with the circular movement of the carrier plate, to the front surface and the back surface of the semiconductor wafer The lower fixed abrasive layer and the upper fixed abrasive layer are brought into sliding contact with each other, and a plurality of front and back surfaces of the semiconductor wafer are simultaneously formed by the lower fixed abrasive layer and the upper fixed abrasive layer.
- a flattening process for flattening It is characterized by a door.
- the semiconductor wafer manufacturing method of the present invention is a semiconductor wafer manufacturing method comprising the above-described fixed abrasive processing method as a fixed abrasive processing step, which is performed before the fixed abrasive processing step, Mirror slicing, which is performed after the slicing step of slicing and cutting the semiconductor wafer and the fixed abrasive processing step, and polishing until the front surface and the back surface of the semiconductor wafer, or at least the front surface becomes a mirror surface And a process.
- a chamfering process for chamfering the edge of the semiconductor wafer which is performed after the fixed abrasive machining process and before the mirror polishing process and is ground in the fixed abrasive machining process, and after the chamfering process and
- the method further includes a single wafer etching step that is performed before the mirror polishing step and that etches the semiconductor wafer one by one by spraying an etching solution onto the surface of the rotating semiconductor wafer.
- a semiconductor wafer is processed using abrasive grains (fixed abrasive grains) having a particle size of less than 4 ⁇ m fixed in a state of being dispersed in an elastic body. Good flatness can be obtained on the wafer surface.
- the elastic body since the elastic body has elasticity, the elastic body appropriately absorbs the pressing force applied to the wafer by the fixed abrasive grains, and the force is excessively concentrated on one point of the wafer and the wafer surface is scratched. It can prevent sticking.
- the surface pressure exerted on the front surface and the back surface of the semiconductor wafer by the lower surface plate and UeJo Edition as a general surface pressure 100 ⁇ 150g / cm 2 250 ⁇ 400g / cm 2 higher than the Then, it is possible to prevent the wafer surface from being scratched while processing the semiconductor wafer at a high processing rate.
- concentration concentration of abrasive grains with respect to the elastic body
- the concentration of abrasive grains with respect to the elastic body (hereinafter also referred to simply as “concentration”) is reduced from about 200, which is a general concentration, to 100 to 150, the elastic body is processed during the processing of the semiconductor wafer.
- concentration concentration of abrasive grains with respect to the elastic body
- an intermediate layer that joins both the lower fixed abrasive layer and the upper surface of the lower surface plate and between the upper fixed abrasive layer and the lower surface of the upper surface plate is interposed. If the thickness of each of the lower fixed abrasive layer and the upper fixed abrasive layer is 100 to 2000 ⁇ m, it is possible to prevent the intermediate layer from coming into direct contact with the wafer by setting the lower limit to 100 ⁇ m. By setting the upper limit, it is possible to avoid the inconvenience that the elastic body of the lower fixed abrasive layer and the upper fixed abrasive layer becomes excessively hard and the strength of the elastic body is reduced to cause damage to the elastic body.
- the flatness obtained in the conventional lapping process or the two processes of the grinding process and the finish grinding process can be obtained in one process of fixed abrasive processing using this fixed abrasive. Therefore, when this fixed abrasive processing is applied to the production of a semiconductor wafer, the number of steps can be shortened, the number of facilities can be suppressed, and an increase in the occupied area of facilities can be suppressed.
- the flatness obtained in the two steps of the conventional lapping step or the grinding step and the finish grinding step is used as the fixed abrasive using the fixed abrasive. Since it can be obtained in one step of grain processing, the number of steps can be shortened and an increase in the area occupied by the facility can be suppressed.
- FIG. 5 is a schematic diagram showing a flaw distribution on a wafer surface when a semiconductor wafer is lapped under a surface pressure of 150 g / cm 2 using a sun gear type lapping apparatus.
- the number of batches when a semiconductor wafer was processed under the conditions of a surface pressure of 150 g / cm 2 (sun gear method) and 200 g / cm 2 (no sun gear method) using a sun gear type lapping device and a sun gearless lapping device It is a graph which shows the relationship with a processing rate.
- It is a schematic diagram showing a flaw distribution on the surface of a wafer when a semiconductor wafer is lapped under a surface pressure of 200 g / cm 2 using a sun gear type lapping apparatus.
- the number of batches when a semiconductor wafer was processed under conditions of surface pressure of 150 g / cm 2 (sun gear method) and 250 g / cm 2 (no sun gear method) using a sun gear type lapping device and a sun gearless lapping device It is a graph which shows the relationship with a processing rate. It is a schematic diagram showing a flaw distribution on a wafer surface when a semiconductor wafer is processed under conditions of a concentration degree of 200 and a surface pressure of 250 g / cm 2 using a non-sun gear type lapping device.
- FIG. 18 (a) and 18 (b) are schematic views showing a grinding apparatus used in the semiconductor wafer manufacturing method according to the prior art part 2
- FIG. 18 (a) is a top view thereof
- FIG. 1 Is a longitudinal sectional view thereof. It is a flowchart which shows the semiconductor wafer manufacturing method which concerns on the example of improvement of the prior art 1. FIG. It is a flowchart which shows the semiconductor wafer manufacturing method which concerns on the example of improvement of the prior art part 2.
- FIGS. 1 to 5 a semiconductor wafer manufacturing method according to an embodiment of the present invention, and a fixed abrasive processing apparatus and a processing method used in the manufacturing method will be described.
- the semiconductor wafer manufacturing method of this embodiment includes a slicing step S10, a first chamfering step S20, a fixed abrasive machining step (fixed abrasive machining method) S30, and a second chamfering step S40.
- a single wafer etching step S50 and a mirror polishing step S60 are provided.
- the single crystal ingot is sliced by a known slicing apparatus such as a wire saw or an inner peripheral blade, and the semiconductor wafer W is cut out.
- a known slicing apparatus such as a wire saw or an inner peripheral blade
- the semiconductor wafer W is cut out.
- the semiconductor wafer for example, a single crystal silicon wafer, a polycrystalline silicon wafer, or the like can be employed.
- the diameter of the semiconductor wafer is, for example, 200 mm, 300 mm, or 450 mm.
- the edge of the wafer W cut out in the slicing step S10 is ground to round the edge (chamfer).
- the fixed abrasive machining step S30 as will be described in detail later, the front and back surfaces of the plurality of wafers W are simultaneously ground and flattened using the fixed abrasive machining apparatus 1.
- the edge of the wafer W processed in the fixed abrasive processing step S30 is chamfered.
- the single wafer etching step S50 the wafer W is rotated by a known single wafer etching apparatus, and an etching solution is sprayed onto the surface of the rotated wafer W to etch the wafers W one by one.
- the fixed abrasive processing apparatus 1 of this embodiment and its processing method will be described in detail.
- a known lapping apparatus, double-side grinding apparatus, double-side polishing apparatus, or the like can be employed as the fixed abrasive processing apparatus 1.
- the fixed abrasive processing apparatus 1 adopts a sunless gear system, and is installed horizontally with a disk-shaped lower surface plate 2 and horizontally.
- Plate 4 is made of, for example, glass epoxy and has a thickness of, for example, 700 ⁇ m.
- the rotation speed of the lower surface plate 2 and the upper surface plate 3 is 5 to 30 rpm. If it is less than 5 rpm, a disadvantage such as a reduction in the processing rate occurs. Moreover, if it exceeds 30 rpm, the problem that a wafer will jump out during processing will occur.
- a preferable rotation speed of both surface plates is 10 to 25 rpm. If it is this range, the process in the state which maintained the process rate will be attained, and the further more suitable effect that flatness can be maintained will be acquired. Both surface plates 2, 3 may be rotated at the same speed or at different speeds. Further, the lower surface plate 2 and the upper surface plate 3 may be rotated in the same direction or in different directions.
- a fixed abrasive layer (lower fixed abrasive layer) 21 is formed on the upper surface of the lower surface plate 2 and a fixed abrasive layer (upper fixed abrasive layer) 31 is formed on the lower surface of the upper surface plate 3. Yes.
- the lower fixed abrasive layer 21 and the upper fixed abrasive layer 31 disperse fine abrasive grains (fixed abrasive grains) 21b and 31b having a particle diameter (average particle diameter) of less than 4 ⁇ m in the elastic bodies 21a and 31a, respectively. It is formed fixed in the state.
- a cured polymer for example, epoxy resin, phenol resin, acrylic urethane resin, polyurethane resin, vinyl chloride resin, fluorine resin
- the abrasive grains 21b and 31b preferably have a particle size of 1 ⁇ m or more and less than 4 ⁇ m, and more preferably have a particle size of 1 ⁇ m or more and less than 2 ⁇ m.
- these numerical values are subject to scratches on the surface of the wafer W if the particle size is 4 ⁇ m or more, and if the particle size is less than 1 ⁇ m, the grinding rate decreases.
- abrasive grains diamond, silica, SiC, alumina, zirconia, or the like can be used.
- Intermediate layers 21c and 31c (which can also be referred to as adhesive layers) are interposed.
- the thickness of the lower fixed abrasive layer 21 and the upper fixed abrasive layer 31 is 100 to 2000 ⁇ m. If the thickness is less than 100 ⁇ m, the inconvenience that the intermediate layer 21c and the intermediate layer 31c are in direct contact with the wafer W occurs. On the other hand, if the thickness exceeds 2000 ⁇ m, the load on the elastic bodies 21a and 31a becomes excessive, so that the strength of the elastic bodies 21a and 31a is reduced and the elastic body is damaged. More preferable thicknesses of the lower fixed abrasive layer 21 and the upper fixed abrasive layer 31 are 300 to 1800 ⁇ m. If it is this range, the more suitable effect of the stable process and the extension of the lifetime of an elastic body will be acquired.
- the concentration (density or dispersion) of the abrasive grains 21b with respect to the elastic body 21a and the concentration (density or dispersion) of the abrasive grains 31b with respect to the elastic body 31a are 100 to 150.
- the concentration level from about 200 to about 100 to 150, as shown in FIG. 6, the abrasive grains 21b and 31b that cannot be ground during the processing of the wafer W are elastic. It tends to be missing from the surfaces of the bodies 21a and 31a.
- a high grinding rate can be stably maintained not only during the initial processing of the wafer W but also during the processing.
- the abrasive grains 21b and 31b supported by the elastic bodies 21a and 31a are rubbed against the front surface and the back surface of the wafer W, and the front surface of the wafer W
- the sharp corners of the abrasive grains 21b and 31b are gradually scraped off part of the back surface, and the grinding proceeds.
- the abrasive grains 21b and 31b used for grinding and having no sharp corners are used as the elastic bodies 21a and 31a. Gradually missing from the surface.
- the abrasive rate of the wafer W is high because there are few abrasive grains 21b and 31b used for grinding and having no sharp corners. However, if the grinding progresses, the abrasive grains 21b and 31b used for grinding and having no sharp corners increase on the surfaces of the elastic bodies 21a and 31a. When the degree of concentration is 200 or more in general, as shown in FIG. 7, the abrasive grains 21b and 31b having no sharp corners are present at high density over the entire surface of the elastic bodies 21a and 31a. Become.
- the surface pressure is finely dispersed in the large amount of abrasive grains 21b and 31b filling the surfaces of the elastic bodies 21a and 31a, so that the surface of the elastic bodies 21a and 31a is sharp.
- the abrasive grains 21b and 31b having no corners are not easily lost.
- the abrasive grains 21b and 31b having no sharp corners are rubbed against the front surface and the back surface of the wafer W, and the front surface and the back surface of the wafer W are only scratched.
- the grinding of the front and back surfaces of the wafer W hardly proceeds.
- the degree of concentration is lowered to 100 to 150, the density of the abrasive grains 21b and 31b on the surfaces of the elastic bodies 21a and 31a is lowered. Therefore, a load can be applied intensively to the abrasive grains 21b and 31b, which are no longer ground due to the elimination of sharp corners, and the lack thereof can be promoted. As a result, the abrasive grains 21b and 31b in the next stage among the abrasive grains 21b and 31b fixed in the vicinity of the surfaces of the elastic bodies 21a and 31a are exposed, and the front surface of the wafer W is formed by the sharp corners. In addition, high grindability on the back surface can be constantly maintained during grinding of the wafer W.
- the degree of concentration is the content rate of abrasive grains in the elastic body including abrasive grains, and the one containing 4.4 cts (0.88 g) in 1 cubic cm of the elastic body is defined as 100. If the degree of concentration is less than 100, there arises a disadvantage that the machining performance is lowered. Further, if the degree of concentration exceeds 150, there is a disadvantage that the self-generated action of the abrasive grains is reduced. When the degree of concentration is in the range of 100 to 150, suitable effects of promoting the self-growth of abrasive grains and stabilizing the processing rate can be obtained.
- the fixed abrasive processing apparatus 1 also includes a motor (lower surface plate motor) 5 for rotating the lower surface plate 2, a motor (motor for upper surface plate) 6 for rotating the upper surface plate 3, and the upper surface plate 3.
- the fixed abrasive processing apparatus 1 further includes a carrier circular motion device 40 that moves the carrier plate 4 in a small circle that does not rotate in a horizontal plane.
- the carrier circular motion device 40 includes a device base 41, a carrier holder 42, an eccentric arm 43, a sprocket 44, a timing chain 45, a small diameter gear (first gear) 46, a motor (carrier motor) 47, a large A radial gear (second gear) 48 is provided.
- the device base 41 is an annular member serving as a skeleton of the device 40, and four bearing portions (base bearing portions) 41a protruding in the radially outward direction are provided every 90 ° in the circumferential direction.
- the carrier holder 42 is an annular member that holds the carrier plate 4, and the lower surface plate 2 has a center axis O 2 that is eccentric from the rotation axis O 1 of the lower surface plate 2 and the upper surface plate 3 by a distance L. And the upper surface plate 3.
- the carrier holder 42 performs a circular motion in which the center axis O 2 moves on the circumference of the radius L around the rotation axis O 1 .
- the carrier plate 4 performs this circular motion integrally with the carrier holder 42, and at this time, no rotation occurs.
- four bearing portions (holder bearing portions) 42a protruding in the radially outward direction are provided every 90 ° in the circumferential direction.
- Each of the eccentric arms 43 is provided with a disc-shaped base 43a and an eccentric shaft that is provided at an eccentric position on the upper surface of the base 43a and protrudes upward. 43b and a rotating shaft 43c provided at the center position of the lower surface of the base 43a and projecting downward.
- the eccentric shaft 43b is eccentric by a distance L with respect to the rotation shaft 43c.
- the rotating shaft 43c is rotatably inserted into the base bearing portion 41a of the apparatus base 41.
- the tip of the rotating shaft 43c protrudes below the base bearing portion 41a, and the sprocket 44 is fixed to the protruding portion.
- a series of timing chains 45 are stretched across the sprockets 44 in a horizontal state.
- the sprocket 44 and the timing chain 45 are arranged so that the four eccentric arms 43 are synchronized so that the eccentric shaft 43b performs a circular motion on the circumference of the radius L around the rotation shaft 43c.
- This is configured as a synchronizing means for rotating the rotating shaft 43c at the same time.
- the synchronizing means comprising the sprocket 44 and the timing chain 45 is changed to another synchronizing means (for example, a synchronizing means of a power transmission system having a gear structure) to achieve synchronization of the four eccentric arms 43. May be.
- the small-diameter gear 46 is fixed to the tip end portion of the rotation shaft 43 c of a predetermined one eccentric arm 43. That is, only one of the four eccentric arms 43 has a long rotating shaft 43c. A small-diameter gear 46 is fixed to the tip of the long rotating shaft 43c.
- the carrier motor 47 is a driving means for causing the carrier plate 4 to move circularly integrally with the carrier holder 42, and has an output shaft 47a protruding upward.
- the large-diameter gear 48 is a gear fixed to the output shaft 47 a of the carrier motor 47, has a larger diameter than the small-diameter gear 46, and meshes with the small-diameter gear 46.
- the base bearing part 41a of the apparatus base 41, the holder bearing part 42a of the carrier holder 42, the eccentric arm 43, and the sprocket 44 are each provided, the number is not limited to this and the carrier holder 42 is stabilized. As long as the number can be supported (for example, three each), it is sufficient.
- the fixed abrasive processing apparatus 1 configured as described above simultaneously planarizes both surfaces of a plurality (three in this case) of wafers W in the fixed abrasive processing step S30 in the procedure shown in FIG. It has become. That is, first, in the setting step S31, the wafer W is set in each hole 4a of the carrier plate 4 by a robot apparatus (not shown) in a state where the upper surface plate 3 is separated from the lower surface plate 2.
- the upper surface plate 3 is brought closer to the lower surface plate 2 by the cylinder 7.
- the pressing step S33 the fixed abrasive grain layers 21 and 31 and the fixed abrasive grains 21b and 31b of the lower surface plate 2 and the upper surface plate 3 are pressed against the front surface and the back surface of the wafer W by the pressurizing mechanism. .
- the surface pressure (hereinafter also simply referred to as “surface pressure”) applied to the front surface and the back surface of the wafer W by the lower surface plate 2 and the upper surface plate 3 is 250 to 400 g / cm 2 .
- the surface pressure is less than 250 g / cm 2 , a disadvantage such as a reduction in processing rate occurs.
- a preferable surface pressure is 300 to 350 g / cm 2 . If it is this range, the further more suitable effect that it can process stably, without reducing a processing rate will be acquired.
- the lower surface plate 2 and the upper surface plate 3 are rotated by the lower surface plate motor 5 and the upper surface plate motor 6, and the carrier plate 4 is moved circularly by the carrier motor 47.
- the fixed abrasive layers 21 and 31 are brought into sliding contact with the front surface and the back surface of the wafer W, and the front and back surfaces of the wafer W are simultaneously planarized by the fixed abrasive layers 21 and 31.
- a circular movement in which the axis O 2 moves on the circumference of the radius L around the rotation axis O 1 is performed without rotating.
- the circular motion speed without rotation of the carrier plate 4 is 1 to 15 rpm. If it is less than 1 rpm, the inconvenience that the front surface and the back surface of the wafer W cannot be uniformly ground occurs. Moreover, if it exceeds 15 rpm, the problem that a crack generate
- the fixed abrasive processing apparatus 1 is used to fix the wafer W with the fixed abrasives 21b and 31b having a small particle size of less than 4 ⁇ m and fixed to the elastic bodies 21a and 31a. Since it processes, the surface which has favorable flatness can be obtained with respect to the wafer W after the slicing step S10.
- the wafer W is in a free state placed in the hole 4a of the carrier plate 4 (in other words, it is not in a state of being vacuum-sucked like the conventional grinding apparatus 200 as shown in FIG. 18).
- good nanotopography swelling appearing on the surface when the wafer W is not attracted
- the elastic bodies 21a and 31a have elasticity, the elastic bodies 21a and 31a appropriately receive the force that the wafer W receives from the fixed abrasive grains 21b and 31b when the fixed abrasive grains 21b and 31b are pressed against the wafer W. It is possible to prevent the wafer W from being excessively concentrated on one point of the wafer W and being damaged.
- the use of abrasive grains having a fine particle size of less than 4 ⁇ m is possible because the fixed abrasive processing apparatus 1 employs a method of fixing and processing abrasive grains. That is, in the conventional lapping apparatus 100 as shown in FIG. 17, since the abrasive grains are loose abrasive grains, it is difficult to reduce the grain size. Further, in the conventional grinding apparatus 200, since the abrasive grains are fixed abrasive grains, the grain size can be reduced, but the productivity is low due to the single wafer type.
- the lower fixed abrasive composed of elastic bodies 21a and 31a fixed with the abrasive grains 21b and 31b dispersed on the surfaces of the lower surface plate 2 and the upper surface plate 3. Since the fixed abrasive processing apparatus 1 is configured such that the grain layer 21 and the upper fixed abrasive layer 31 are formed and the positions of the abrasive grains 21b and 31b are fixed, the abrasive grains 21b having a fine grain size of less than 4 ⁇ m , 31b can be used, and a plurality of wafers W can be simultaneously processed on both sides, and good productivity can be ensured. And since several sheets are processed simultaneously, the number of facilities can be restrained and the increase in the occupation area of an equipment can be suppressed.
- the fixed abrasive processing step S30 alone is the same as when the conventional two steps shown in FIGS. 19 and 20 (the lapping step S130 ⁇ the finishing grinding step S135 or the grinding step S220 ⁇ the finishing grinding step S225) are performed. Since good flatness can be obtained, the number of steps can be reduced as compared with the conventional method. And since the number of processes is shortened, the number of facilities can be suppressed, and even if a large-diameter wafer is manufactured, an increase in the occupation area of the facilities can be suppressed.
- the surface pressure applied to the front surface and the back surface of the semiconductor wafer W by the lower surface plate 2 and the upper surface plate 3 is 250 to 400 g / higher than the conventional one. Since it is set to cm 2 , it is possible to prevent the wafer surface from being scratched while maintaining a higher processing rate than in the past.
- the semiconductor wafer manufacturing method has been described in which the steps S10 to S60 are performed in the order shown in FIG. 4.
- the present invention is not limited to such a manufacturing method, and the order of the steps is changed, for example. It is possible that at least the fixed abrasive processing step S30 is performed after the slicing step S10 and before the mirror polishing step S60. Further, the fixed abrasive machining step S30 may be performed a plurality of times between the slicing step S10 and the mirror polishing step S60.
- the outer peripheral portion of the crystal block was subjected to outer peripheral grinding by 6 mm by an outer peripheral grinding apparatus having a resinoid grinding wheel containing # 200 abrasive grains (SiC). Thereby, each crystal block is formed in a cylindrical shape.
- a large number of silicon wafers (semiconductor wafers) W having a thickness of 830 ⁇ m were obtained by slicing the crystal block formed into a cylindrical shape with a wire saw. Thereafter, the rotating chamfering grindstone was pressed against the outer peripheral portion of the silicon wafer W to chamfer the outer peripheral portion of the silicon wafer W.
- the front surface and the back surface of the silicon wafer W were ground simultaneously using the fixed abrasive processing apparatus 1 shown in FIG.
- the fixed abrasive processing apparatus 1 As the fixed abrasive processing apparatus 1, a non-sun gear type lapping apparatus was adopted. Details will be described below.
- the upper platen 3 is separated from the lower platen 2, three wafers W are put into three holes 4 a formed in the glass epoxy carrier plate 4 having a thickness of 700 ⁇ m by a robot apparatus (not shown). I set it.
- the upper surface plate 3 was brought close to the lower surface plate 2 by the cylinder 7.
- the lower surface plate 2 (lower fixed abrasive layer 21) and the upper surface plate 3 (upper fixed abrasive layer 31) are respectively applied to the front and back surfaces of the wafer W by a pressurizing mechanism (not shown). Pressed.
- the surface pressure applied to the front surface and the back surface of the wafer W by the lower surface plate 2 and the upper surface plate 3 was 150, 200, and 250 g / cm 2 .
- the lower surface plate 2 and the upper surface plate 3 were rotated in directions different from each other at 15 rpm.
- the circular motion speed without rotation of the carrier plate 4 was set to 7.5 rpm.
- Each of the lower fixed abrasive layer 21 and the upper fixed abrasive layer 31 is formed by fixing diamond abrasive grains 21b and 31b having a particle diameter of 2 ⁇ m to hardened polymer-based elastic bodies 21a and 31a.
- the thickness is 800 ⁇ m.
- the concentration of abrasive grains with respect to the elastic body was 100 and 200.
- the grinding amount was 40 to 80 ⁇ m including the front and back surfaces of the wafer W.
- the front surface and the back surface of the silicon wafer W were lapped simultaneously by supplying a lapping solution containing loose abrasive grains using a sun gear lapping device 100 shown in FIG.
- the rotation conditions of the lower surface plate 101 and the upper surface plate 102 and the circular motion speed without rotation of the carrier plate 105 are the same as in the embodiment, and the lower surface plate 101 and the upper surface plate 102 act on the front surface and the back surface of the wafer W.
- the applied surface pressure was 150 g / cm 2 .
- the silicon wafer W was lapped by the sun gear lapping apparatus 100 of FIG. 17 using a lapping solution containing loose abrasive grains and a surface pressure of 150 g / cm 2 (Comparative Example 1). Further, the wafer W was processed using the fixed abrasive processing apparatus 1 shown in FIG. 1 with a surface pressure of 150 g / cm 2 and a concentration of 200 (Example 1). As a result, as shown in FIG. 8, in the case of Example 1, the processing rate of the wafer W was almost halved as compared with Comparative Example 1.
- FIG. 9 shows a scratch distribution on the wafer surface according to Comparative Example 1.
- Example 2 the surface pressure during processing was increased to 200 g / cm 2 compared to Example 1 (Example 2).
- the initial grinding of Example 2 was almost the same processing rate as in Comparative Example 1, but the processing rate was gradually increased as the number of batches increased continuously. Declined. This is considered to be because the abrasive grains 21b and 31b that became ungrindable by the processing increase on the surfaces of the elastic bodies 21a and 31a while the processing is repeated.
- the surface pressure is increased from 150 g / cm 2 to 200 g / cm 2 (Comparative Example 2), so that several thousand scratches are formed on the wafer surface as shown in FIG. There has occurred.
- Example 3 the surface pressure during processing was increased to 250 g / cm 2 with respect to Example 2 (Example 3).
- the processing rate of Example 3 was higher than that of Comparative Example 1 with respect to the processing rate.
- the concentration of the wafer surface according to Example 3 was as high as 200, and several hundred scratches were generated on the wafer surface. This is because a large amount of abrasive grains 21b and 31b that cannot be ground due to processing exist over the entire surface of the elastic bodies 21a and 31a, and even if grinding of the wafer W is continued, the surface pressure is finely dispersed in these abrasive grains. This is considered to be because the abrasive grains that have become ungrindable are damaged from the surfaces of the elastic bodies 21a and 31a without being lost.
- Example 3 the surface pressure was kept at 250 g / cm 2 and the concentration was reduced to 100 (Example 4).
- the grinding load is concentrated on the abrasive grains 21b and 31b that cannot be ground at the time of processing, the loss of the abrasive grains 21b and 31b from the surfaces of the elastic bodies 21a and 31a is promoted, and the fixed abrasive at the next stage.
- the grains 21b and 31b were easily exposed.
- high grindability on the front and back surfaces of the wafer could be maintained at all times during the grinding of the wafer, and the scratches on the wafer surface could be reduced to about 5 as shown in FIG.
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Abstract
Description
図15に示す方法では、まず、スライス工程S110で単結晶インゴットをスライスしてウェーハWを切り出した後に、面取り工程S120でそのウェーハWのエッジ(周縁部)を面取りする。続いて、ラッピング工程S130で、粒度の比較的粗い砥粒(遊離砥粒)によって複数枚のウェーハWの両面を同時にラッピング(バッチ式ラッピング)する。ラッピング後のウェーハWは、エッチング工程S140及び鏡面研磨工程S150を経て加工されて最終製品となる。
一方、図16に示す方法では、まず、スライス工程S210で単結晶インゴットをスライスしてウェーハWを切り出す。続いて、研削工程S220で、粒度の比較的粗い砥粒(固定砥粒)によってウェーハWのおもて面及び裏面を片面且つ1枚ずつ研削(枚葉式研削)する。研削後のウェーハWは、面取り工程S230,エッチング工程S240及び鏡面研磨工程S250を経て加工されて最終製品となる。
なお、これらラッピング装置100や研削装置200については特許文献1に開示されている。
このため、図19及び図20に示すように、ラッピング工程S130又は研削工程S220後で且つ鏡面研磨工程S150又はS250前に、仕上げ研削工程S135又はS225を挿入し、仕上げ研削することが行なわれている。仕上げ研削工程S135及びS225では、例えばレジンボンド砥石等の、粒度が#2000~#8000の砥粒で構成されるものであって且つ比較的自生発刃を促進させるような砥石を使用して、ウェーハWのおもて面及び裏面を片面ずつ仕上げるようになっている。
また、ウェーハWの口径が大きくなると(具体的には、口径が450mmになると)、ラッピング工程S130で使用するラッピング装置100が大型化し、設備の占有面積が増大するという課題がある。また、研削工程S220で使用する研削装置200についても、ラッピング装置100と比較して装置規模は小さいが、ウェーハWを1枚ずつ処理する枚葉式のために設置台数が増加し、その結果、設備の占有面積が増大するという課題がある。
該弾性体に対する該砥粒の集中度を、100~150とすることが好ましい。
また、該下側固定砥粒層と該下定盤の上面との間、及び、該上側固定砥粒層と該上定盤の下面との間には、それぞれ両者を接合する中間層が介在し、該下側固定砥粒層、及び、該上側固定砥粒層の厚さを、いずれも100~2000μmとすることが好ましい。
さらに、弾性体に対する砥粒の集中度(以下単に「集中度」とも言う。)を、一般的な集中度である200前後から100~150まで低下させると、半導体ウェーハの加工時において、弾性体の表面から固定砥粒が欠落し易くなる。これにより、半導体ウェーハの加工の初期だけでなく加工中においても高い加工レートを安定して維持することができる。
また、本発明の半導体ウェーハ製造方法によれば、上述のように、従来のラッピング工程又は研削工程と仕上げ研削工程との2工程で得ていた平坦度を、この固定砥粒を使用した固定砥粒加工の1工程で得ることができるので、工程数を短縮し且つ設備の占有面積の増大を抑制することができる。
[一実施形態]
図1~図5を参照して、本発明の一実施形態の半導体ウェーハ製造方法、並びに、その製造方法で用いる固定砥粒加工装置及び加工方法について説明する。
本実施形態の半導体ウェーハ製造方法は、図4に示すように、スライス工程S10と、第1面取り工程S20と、固定砥粒加工工程(固定砥粒加工方法)S30と、第2面取り工程S40と、枚葉エッチング工程S50と、鏡面研磨工程S60とを備えている。
半導体ウェーハとしては、例えば単結晶シリコンウェーハ、多結晶シリコンウェーハなどを採用することができる。半導体ウェーハの直径は、例えば200mm、300mm、450mmである。
固定砥粒加工工程S30では、後に詳述するように、固定砥粒加工装置1を用いて、複数枚のウェーハWのおもて面及び裏面を同時に研削して平坦化加工する。
枚葉エッチング工程S50では、公知の枚葉エッチング装置によってウェーハWを回転させ、回転状態のウェーハWの表面にエッチング液を噴射してウェーハWを1枚ずつエッチングする。
ここで、本実施形態の固定砥粒加工装置1とその加工方法について詳述する。
固定砥粒加工装置1としては、例えば、公知のラッピング装置、両面研削装置、両面研磨装置などを採用することができる。
本実施形態では、固定砥粒加工装置1は、図1~図3に示すように、無サンギヤ方式を採用しており、水平に設置された円板状の下定盤2と、水平に設置されて下定盤2に上方から対向する円板状の上定盤3と、下定盤2と上定盤3との間に水平に設置され、ウェーハWを収容するホール4aが複数個形成されたキャリアプレート4とを備えている。キャリアプレート4は、例えば、ガラスエポキシで構成され、厚さは、例えば、700μmである。
両定盤2,3は、同一速度で回転させても、異なる速度で回転させてもよい。また、下定盤2及び上定盤3は、同じ方向へ回転させても、異なる方向へ回転させてもよい。
なお、図2に示すように、下定盤2の上面と下側固定砥粒層21との間、及び、上定盤3の下面と上側固定砥粒層31との間には、それぞれ、両者を接合(接着)する中間層21c,31c(接着層とも称することができる)が介在する。
ところが、研削が進行して行けば、弾性体21a,31aの表面において、研削に使用されて鋭利な角部がなくなった砥粒21b,31bが増加する。集中度が一般的な200以上である場合には、図7に示すように、鋭利な角部がなくなった砥粒21b,31bが弾性体21a,31aの表面全域に高密度で存在することとなる。そのため、ウェーハWの研削を継続しても、弾性体21a,31aの表面を埋め尽くした多量の砥粒21b,31bに面圧が細かく分散するため、弾性体21a,31aの表面から、鋭利な角部がなくなった砥粒21b、31bが欠落し難くなる。その結果、研削の中期以降は、鋭利な角部がなくなった砥粒21b,31bがウェーハWのおもて面及び裏面に擦り付けられてウェーハWのおもて面及び裏面にキズが発生するだけで、ウェーハWのおもて面及び裏面の研削はほとんど進行しなくなる。
固定砥粒加工装置1はまた、下定盤2を回転駆動するモータ(下定盤用モータ)5と、上定盤3を回転駆動するモータ(上定盤用モータ)6と、上定盤3を下定盤2に対して離接させるべく上定盤3を昇降させるシリンダ(昇降装置)7と、下定盤2と上定盤3とによりウェーハWを押圧すべく下定盤2と上定盤3との何れか又は両方を互いに接近する方向に加圧する加圧機構(図示略)とを備えている。
固定砥粒加工装置1はさらに、キャリアプレート4を水平面内で自転しない小円運動させるキャリア円運動装置40を備えている。
装置基体41は、装置40の骨格となる環状の部材であって、径外方向へ突出した軸受部(基体軸受部)41aが周方向90°毎に4個設けられている。
偏心軸43bは、回転軸43cに対して距離Lだけ偏心している。そして、キャリアホルダ42のホルダ軸受部42aに挿着され固定されている。回転軸43cは、装置基体41の基体軸受部41aに回転自在に挿着されている。また、回転軸43cの先端は基体軸受部41aの下方にそれぞれ突出し、その突出部にスプロケット44が固着されている。各スプロケット44には、一連のタイミングチェーン45が水平状態で架け渡されている。
なお、このスプロケット44とタイミングチェーン45とからなる同期手段を他の同期手段(例えば、ギヤ構造の動力伝達系の同期手段)に変更して、4個の偏心アーム43の同期を達成するようにしても良い。
キャリアモータ47は、キャリアプレート4をキャリアホルダ42と一体に円運動させる駆動手段であって、上方に突出した出力軸47aを有している。
なお、装置基体41の基体軸受部41a,キャリアホルダ42のホルダ軸受部42a,偏心アーム43及びスプロケット44はそれぞれ4個設けられているが、その個数はこれに限定されず、キャリアホルダ42を安定して支持できる個数(例えば3個ずつ)であれば良い。
つまり、まず、セット工程S31において、上定盤3が下定盤2に対して離隔した状態で、図示しないロボット装置によりウェーハWをキャリアプレート4の各ホール4aにセットする。
続いて、押付工程S33において、加圧機構により、ウェーハWのおもて面及び裏面それぞれに、下定盤2及び上定盤3の固定砥粒層21,31ひいては固定砥粒21b,31bを押し付ける。
キャリアモータ47の出力軸47aを回転させると、その回転力が、大径ギヤ48,小径ギヤ46,スプロケット44及びタイミングチェーン45を介して全ての偏心アーム43の回転軸43cに伝達され、偏心アーム43が各回転軸43cを中心として同期回転する。そして、キャリアホルダ42が回転軸43cに対して偏心した偏心軸43bに連結しているので、キャリアホルダ42、ひいてはキャリアホルダ42に保持されたキャリアプレート4が、偏心軸43bの円運動によって、中心軸O2が回転軸O1を中心とした半径Lの円周上を動く円運動を自転することなく行なうようになっている。
キャリアプレート4の自転を伴わない円運動速度は、1~15rpmである。1rpm未満では、ウェーハWのおもて面及び裏面を均一に研削できないといった不都合が発生する。また、15rpmを超えれば、キャリアプレート4のホール4aに保持されたウェーハWの端面にキズが発生するといった不都合が発生する。
本発明の一実施形態に係る半導体ウェーハ製造方法、並びに、その製造方法で用いる固定砥粒加工装置及び加工方法は上述のようであるので、以下のような効果を奏する。
固定砥粒加工工程S30において、固定砥粒加工装置1を使用して、弾性体21a,31aに分散させた状態で固定された、4μm未満という粒度の小さな固定砥粒21b,31bでウェーハWを加工するので、スライス工程S10後のウェーハWに対して、良好な平坦度を有する表面を得ることができる。このとき、ウェーハWはキャリアプレート4のホール4aに載置された自由な状態であるので(換言すれば、図18に示すような従来の研削装置200のように真空吸着された状態ではないので)、良好な平坦度に加えて良好なナノトポグラフィ(ウェーハWの非吸着状態時に表面に現われるうねり)を得ることができる。
なお、4μm未満という粒度が微細な砥粒の使用は、固定砥粒加工装置1が砥粒を固定して加工する方式を採用したために可能になったものである。つまり、図17に示すような従来のラッピング装置100では、砥粒が遊離砥粒であるので粒度を微細化することが難しかった。また、従来の研削装置200では、砥粒が固定砥粒であるので粒度を微細化することは可能であるものの、枚葉式のために生産性が低かった。
そして、工程数が短縮されるので、設備点数を抑え、たとえ大口径ウェーハを製造する場合であっても、設備の占有面積の増大を抑制することができる。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されず、本発明の主旨を逸脱しない範囲で種々変更することが可能である。
ボロンが所定量ドープされたシリコン融液からチョクラルスキー法により引き上げられた、直径306mm、直胴部長さ2500mm、比抵抗0.01Ω・cm、初期酸素濃度1.0×1018atoms/cm3の単結晶シリコンインゴットを、複数の結晶ブロックに切断した後に、各結晶ブロックの外周研削を行った。具体的には、♯200の砥粒(SiC)を含むレジノイド研削砥石を有する外周研削装置により、結晶ブロックの外周部を6mmだけ外周研削した。これにより、各結晶ブロックが円柱状に成形される。次に、円柱状に成形された結晶ブロックをワイヤソーによってスライスすることで、厚さ830μmの多数枚のシリコンウェーハ(半導体ウェーハ)Wを得た。その後、回転中の面取り用砥石をシリコンウェーハWの外周部に押し付けてシリコンウェーハWの外周部を面取りした。
まず、上定盤3が下定盤2に対して離隔した状態で、図示しないロボット装置によって、3枚のウェーハWを、厚さ700μmのガラスエポキシ製キャリアプレート4に形成された3つのホール4aにセットした。次に、シリンダ7により上定盤3を下定盤2に接近させた。続いて、加圧機構(図示略)により、ウェーハWのおもて面及び裏面それぞれに、下定盤2(下側固定砥粒層21)及び上定盤3(上側固定砥粒層31)を押し付けた。下定盤2及び上定盤3によってウェーハWのおもて面及び裏面に作用される面圧は、150,200,及び250g/cm2とした。この状態で、下定盤2及び上定盤3を、いずれも15rpmで、互いに異なる方向に回転させた。また、キャリアプレート4の自転を伴わない円運動速度を7.5rpmとした。
その結果、図8に示すように、比較例1に比べて、実施例1の場合は、ウェーハWの加工レートがほぼ半減した。なお、比較例1によるウェーハ表面のキズ分布を図9に示す。
一方、図13に示すように、実施例3によるウェーハ表面は、集中度が200と高いため、ウェーハ表面に数100個のキズが発生した。これは、加工により研削不能となった砥粒21b,31bが弾性体21a,31aの表面全域に多量に存在し、ウェーハWの研削を継続しても、これらの砥粒に面圧が細かく分散し、研削不能となった砥粒が弾性体21a,31aの表面から欠落せずにウェーハ表面を傷付けるためと考えられる。
2 下定盤
21 固定砥粒層(下側固定砥粒層)
21a 弾性体
21b 固定砥粒(砥粒)
21c 中間層
3 上定盤
31 固定砥粒層(上側固定砥粒層)
31a 弾性体
31b 固定砥粒(砥粒)
31c 中間層
4 キャリアプレート
4a ホール
40 キャリア円運動装置
41 装置基体
42 キャリアホルダ
43 偏心アーム
43a ベース
43b 偏心軸
43c 回転軸
44 スプロケット
45 タイミングチェーン
46 小径ギヤ
47 モータ(キャリアモータ)
48 大径ギヤ
5 モータ(下定盤用モータ)
6 モータ(上定盤用モータ)
7 シリンダ(昇降装置)
100 ラッピング装置
200 研削装置
O1 下定盤及び上定盤の回転軸
O2 キャリアプレート及びキャリアホルダの中心軸
Claims (7)
- 半導体ウェーハの製造工程で用いられる固定砥粒加工装置であって、
水平に設置された円板状の下定盤と、
該下定盤の上面に形成されて該半導体ウェーハのおもて面を研削する下側固定砥粒層と、
該下定盤を、回転軸を中心として回転させる下定盤用モータと、
水平に設置されて該下定盤に上方から対向する円板状の上定盤と、
該上定盤の下面に形成されて該半導体ウェーハの裏面を研削する上側固定砥粒層と、
該上定盤を、回転軸を中心として回転させる上定盤用モータと、
該下定盤と該上定盤との間に水平に設置され、該半導体ウェーハを収容するホールが複数形成されたキャリアプレートと、
該キャリアプレートを円運動させるキャリア円運動装置とを備え、
該下側固定砥粒層及び該上側固定砥粒層はそれぞれ、弾性体に粒径が4μm未満の砥粒を分散させた状態で固定されている
ことを特徴とする、固定砥粒加工装置。 - 該下定盤および該上定盤によって該半導体ウェーハのおもて面及び裏面に作用される面圧を250~400g/cm2としたことを特徴とする、請求項1記載の固定砥粒加工装置。
- 該弾性体に対する該砥粒の集中度を、100~150としたことを特徴とする、請求項1又は2記載の固定砥粒加工装置。
- 該下側固定砥粒層と該下定盤の上面との間、及び、該上側固定砥粒層と該上定盤の下面との間には、それぞれ両者を接合する中間層が介在し、
該下側固定砥粒層、及び、該上側固定砥粒層の厚さを、いずれも100~2000μmとしたことを特徴とする、請求項1~3のいずれか1項に記載の固定砥粒加工装置。 - 請求項1~4のいずれか1項に記載の固定砥粒加工装置を使用する固定砥粒加工方法であって、
該上定盤が該下定盤に対して離隔した状態で、該キャリアプレートの該ホールそれぞれに該半導体ウェーハをセットするセット工程と、
該上定盤を該下定盤に接近させる接近工程と、
該半導体ウェーハのおもて面及び裏面それぞれに、該下側固定砥粒層及び該上側固定砥粒層の該砥粒を押し付ける押付工程と、
該下定盤及び該上定盤を回転させると同時に該キャリアプレートを円運動させて、該半導体ウェーハのおもて面及び裏面に対して該下側固定砥粒層及び該上側固定砥粒層を摺接させ、該下側固定砥粒層及び該上側固定砥粒層によって該半導体ウェーハのおもて面及び裏面を複数枚同時に平坦化加工する平坦化加工工程とを備えた
ことを特徴とする、固定砥粒加工方法。 - 請求項5記載の固定砥粒加工方法を固定砥粒加工工程として備える半導体ウェーハ製造方法であって、
該固定砥粒加工工程の前に実施され、単結晶インゴットをスライスして該半導体ウェーハを切り出すスライス工程と、
該固定砥粒加工工程の後に実施され、該半導体ウェーハのおもて面及び裏面、又は少なくともおもて面を鏡面になるまで研磨加工する鏡面研磨工程とを備えた
ことを特徴とする、半導体ウェーハ製造方法。 - 該固定砥粒加工工程の後且つ該鏡面研磨工程の前に実施され、該固定砥粒加工工程で研削された該半導体ウェーハのエッジを面取りする面取り工程と、
該面取り工程の後且つ該鏡面研磨工程の前に実施され、回転状態の該半導体ウェーハの表面にエッチング液を噴射して該半導体ウェーハを1枚ずつエッチングする枚葉エッチング工程とをさらに備えた
ことを特徴とする、請求項6記載の半導体ウェーハ製造方法。
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