WO2010110081A1 - マイクロレンズアレイの製造方法およびマイクロレンズアレイ - Google Patents
マイクロレンズアレイの製造方法およびマイクロレンズアレイ Download PDFInfo
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- WO2010110081A1 WO2010110081A1 PCT/JP2010/054102 JP2010054102W WO2010110081A1 WO 2010110081 A1 WO2010110081 A1 WO 2010110081A1 JP 2010054102 W JP2010054102 W JP 2010054102W WO 2010110081 A1 WO2010110081 A1 WO 2010110081A1
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- microlens
- microlens array
- manufacturing
- etching
- substantially hemispherical
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 66
- 239000007789 gas Substances 0.000 claims abstract description 50
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 27
- 239000011737 fluorine Substances 0.000 claims abstract description 27
- 239000001257 hydrogen Substances 0.000 claims abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 26
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00278—Lenticular sheets
- B29D11/00298—Producing lens arrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00365—Production of microlenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
Definitions
- the present invention relates to a microlens array manufacturing method and a microlens array, and more particularly to a microlens array manufacturing method and a microlens array in which a microlens is formed by etching an organic film.
- One of the members constituting a CCD (Charge Coupled Device) solid-state imaging device is a microlens array in which a plurality of microlenses are formed in a matrix.
- the microlens array has a shape in which a plurality of microlenses protruding in a substantially hemispherical shape are juxtaposed on one surface in the vertical and horizontal directions.
- Such a microlens array is manufactured by etching an organic film layer serving as a material layer of a microlens.
- Patent Document 1 Japanese Patent Laid-Open No. 10-148704
- a conventional method for manufacturing a microlens array will be briefly described. First, a color filter layer is formed on a silicon substrate, and an organic film layer serving as a microlens material is formed thereon. Further, a resist layer having a rectangular cross section as a mask layer is formed thereon. Thereafter, the formed resist layer is reflowed along the shape pattern of the microlens so as to protrude from the upper surface of the organic film layer into a substantially hemispherical shape.
- FIG. 14 is a schematic cross-sectional view showing the microlens array material 101 formed as described above.
- the cross section shown in FIG. 14 is a cross section obtained by cutting the microlens array material 101 along a plane along the thickness direction.
- the vertical direction of the paper is the plate thickness direction, that is, the vertical direction
- the horizontal direction of the paper is the horizontal direction.
- the silicon layer 102, the color filter layer 103, the organic film layer 104, and the resist layer 105 are formed in order from the lower layer.
- the resist layer 105 is reflowed so that the upper surface 106 has a substantially hemispherical shape. Note that since the resist layer 105 formed on the upper surface 107 of the organic film layer 104 is removed by etching in a later step, the resist layer 105 is formed of an organic material or the like as with the organic film layer 104.
- Etching is performed on the microlens array material 101 having such a shape. Etching is performed so as to remove both the organic film layer 104 and the resist layer 105 having a substantially hemispherical shape. That is, a selectively protruding shape remains at the portion where the resist layer 105 is formed. In this way, the outer shape of the microlens protruding in a substantially hemispherical shape is formed.
- FIG. 15 shows a schematic cross-sectional view of the microlens array 111 after the etching.
- a silicon layer 102, a color filter layer 103, and an organic film layer 104 are formed in order from the lower layer, and the resist layer 105 shown in FIG. It has been removed by etching.
- a microlens 108 is formed on the surface of the organic film layer 104 along the shape of the substantially hemispherical resist layer 105.
- the height of the micro lens that is, the length in the vertical direction of the so-called micro lens is longer. That is, if the height of the microlens is high, the outer shape of the microlens becomes a shape close to a hemispherical surface, and the light condensing degree in the microlens is improved. Therefore, it is required to make the height of the microlens higher. Furthermore, in the method for manufacturing a microlens array, it is preferable that the height of the microlens can be easily adjusted as required.
- the height of the microlens that is, the length of the microlens in the vertical direction is the horizontal direction of the lowermost microlens 108 on the upper surface of the organic film layer 104 after the etching process with reference to FIG.
- This is a vertical length H from the end portion 109 to the apex 110 that is the uppermost portion of the microlens 108 protruding in a substantially hemispherical shape.
- An object of the present invention is to provide a method for manufacturing a microlens array in which the height of the microlens can be easily adjusted.
- Another object of the present invention is to provide a microlens array having a high microlens.
- a method of manufacturing a microlens array according to the present invention is a method of manufacturing a microlens array having a plurality of microlenses projecting in a substantially hemispherical shape on one surface, wherein an organic film layer serving as a material layer of the microlens is formed. Etch the resist formation process that forms a resist layer to form the shape of the microlens on top, and the formed resist layer and organic film layer using a mixed gas in which molecules containing hydrogen and molecules containing fluorine are mixed Etching step.
- microlens array manufacturing method makes it easy to adjust the height of the microlens. This is considered to have the following two factors. There is no particular problem with the following two factors, whichever is dominant.
- the molecule containing fluorine in the etching gas has a strong aggressiveness in etching against the material to be etched when it is dissociated as fluorine.
- the dissociated fluorine reacts with the dissociated hydrogen in the molecule containing hydrogen to become HF.
- the amount of fluorine having strong aggressiveness is reduced by bonding with hydrogen dissociated in a molecule containing hydrogen.
- physical etching proceeds more preferentially than chemical etching with dissociated fluorine.
- the etching rate is high in chemical etching, that is, early removal of the resist layer that is immediately removed is suppressed. As a result, it is considered that the organic film layer remaining on the lower side of the region where the resist layer is formed increases, and the height of the microlens can be increased.
- the height of the microlens can be adjusted by adjusting the flow rate ratio, components, etc. of the molecule containing hydrogen and the molecule containing fluorine in the mixed gas to be supplied. Therefore, the height of the microlens, that is, the length of the microlens in the vertical direction can be easily adjusted. In addition, a microlens with a high height can be obtained as required.
- the resist forming step is a step of forming a resist layer having a shape protruding in a substantially hemispherical shape.
- the gas flow rate of the molecule containing hydrogen in the mixed gas is 30 sccm or more.
- the pressure in the processing container when performing the etching step is preferably 200 mTorr or less.
- the ratio of the molecule containing hydrogen and the molecule containing fluorine in the mixed gas is preferably 1: 2 to 1:15.
- the molecule containing hydrogen contains HBr.
- the molecule containing fluorine contains a plurality of fluorocarbon gases whose structural formula is represented by CxFy (where x and y are integers of 1 or more).
- molecules containing fluorine includes CF 4 and C 4 F 8, the flow rate ratio of CF 4 and C 4 F 8 is 2: 1 to 15: 1.
- the etching process is performed by microwave plasma using a microwave as a plasma source.
- the microlens array is a microlens array having a plurality of microlenses protruding in a substantially hemispherical shape on one surface, on the organic film layer serving as a material layer of the microlens. It is obtained by forming a resist layer for forming a microlens shape and etching the formed resist layer and organic film layer using a mixed gas in which molecules containing hydrogen and molecules containing fluorine are mixed. .
- the microlens array is a microlens array having a plurality of microlenses that protrude in a substantially hemispherical shape on one surface, and protrudes in a substantially hemispherical shape on one surface.
- the microlens array is a microlens array having a plurality of microlenses that protrude in a substantially hemispherical shape on one surface, and is the lowest part in the vertical direction of the microlens.
- the ratio of the length in the vertical direction from the horizontal end to the apex of the uppermost microlens protruding in a substantially hemispherical shape to the length between the horizontal ends is 1: 2 to 1: 6.
- the microlens array is a microlens array having a plurality of microlenses that protrude in a substantially hemispherical shape on one surface, and is arranged in a horizontal direction at a horizontal end portion of the microlens.
- the angle formed between the extending line and the tangent of the spherical surface at the horizontal end of the microlens is ⁇ , ⁇ ⁇ 30 degrees.
- microlens array manufacturing method and the microlens according to the present invention it becomes easy to adjust the height of the microlens included in the microlens array. Accordingly, a microlens array having microlenses having a desired height can be easily obtained.
- the microlens array according to the present invention since the height of the microlens is high, the light condensing degree can be improved.
- FIG. 4 is a flowchart showing typical steps in the method of manufacturing a microlens array according to an embodiment of the present invention. It is a schematic sectional drawing which shows a part of micro lens array raw material before an etching process is performed. It is the figure which looked at the microlens array material before etching processing from the upper side. It is a schematic sectional drawing of the micro lens array raw material in the process in which the etching process is performed, and shows the state in which the resist layer remains. It is a schematic sectional drawing of the micro lens array raw material in the process in which the etching process is performed, and shows the state in which the resist layer does not remain. It is a schematic sectional drawing which shows a part of micro lens array after an etching process was performed.
- FIG. 1 is a flowchart showing typical steps in a method for manufacturing a microlens array according to an embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view showing a part of a microlens array material before etching, which will be described later, and corresponds to FIG. 14 described above. With reference to FIG. 1 and FIG. 2, the detail of the manufacturing method of the micro lens array which concerns on one Embodiment of this invention is demonstrated.
- a color filter layer 13 made of polystyrene resin or polyimide resin is formed on the silicon layer 12, and an organic film layer 14 to be a material layer of a microlens is formed thereon.
- a resist layer 15 corresponding to the arrangement of the plurality of microlenses is formed on the organic film layer 14 (FIG. 1A).
- the resist layer 15 is also made of an organic material that can be removed by etching, which will be described later.
- the resist layer 15 is formed by first being formed into a substantially rectangular cross section by a photoresist in a lithography technique and then reflowing along a substantially hemispherical shape that is an outer shape of the microlens (FIG. 1 ( B)).
- FIG. 3 shows the microlens array material 11 after reflow as viewed from the upper side, that is, from the direction of arrow III in FIG.
- the planar shape of the resist layer 15 is a substantially elliptical shape with the horizontal direction as the longitudinal direction.
- the microlens array material 11 before the etching process includes a silicon layer 12, a color filter layer 13, an organic film layer 14, and a substantially hemispherical resist layer whose upper surface 16 is reflowed in order from the bottom layer. 15 is formed.
- a plurality of layers are also formed on the lower layer side of the silicon layer 12, illustration and description thereof are omitted from the viewpoint of easy understanding.
- Etching for removing the resist layer 15 and the organic film layer 14 is performed on the microlens array material 11 (FIG. 1C).
- plasma etching is performed by a microwave plasma etching processing apparatus using a microwave as a plasma source. Briefly describing the etching process in such a microwave plasma etching apparatus, the material to be etched that becomes the substrate to be processed in the processing container, here, the microlens array material 11 described above is disposed, and then the processing container is The pressure is reduced to a predetermined pressure. Thereafter, plasma is generated in the processing chamber by microwaves, and an etching gas is introduced. Then, an etching process is performed on the material to be etched.
- a mixed gas in which molecules containing hydrogen and molecules containing fluorine are mixed is used.
- An example of a molecule containing hydrogen is HBr.
- the molecules containing fluorine for example, CF 4, fluorocarbon gas C 2 F 6, C 3 F 8, C 4 F 8. That is, the molecule containing fluorine includes a plurality of CFCs whose structural formula is represented by CyFz (where y and z are integers of 1 or more).
- FIGS. 4 and 5 show a state in the middle of the etching process of the microlens array material 11 considered in the method of manufacturing the microlens array according to the embodiment of the present invention.
- FIG. 4 shows a state where the resist layer 15 remains
- FIG. 5 shows a state after the resist layer 15 is removed.
- the cross section shown in any figure is a cross section corresponding to FIG. In the etching process, the etching proceeds in the order of FIG. 2, FIG. 4, FIG. 5, and FIG. Further, from the viewpoint of easy understanding, the diagram shown in FIG. 2 is shown on the left side in FIG. 4 with the vertical position of the silicon layer 12 being the same.
- organic film layer 14 Will be removed. That is, the position of the upper surface 17 of the organic film layer 14 shown on the left side in FIG. 4 moves downward as indicated by the position of the upper surface 18 of the organic film layer 14 shown on the right side in FIG.
- the resist layer 15 is removed from above by etching. In this case, the position of the most protruding vertex 19 on the upper side of the resist layer 15 shown on the left side in FIG.
- the vertical length indicated by h 1 in FIG. 4 at the time of transition from the vertex 19 to the vertex 20 in the resist layer 15, that is, the etching amount of the so-called resist layer 15 is the upper surface 17 in the organic film layer 14. from the vertical direction indicated by h 2 in Fig.
- a mixed gas used in an etching process included in the method of manufacturing a microlens array that is, a mixed gas in which molecules containing hydrogen and molecules containing fluorine are mixed.
- a mixed gas used in an etching process included in the method of manufacturing a microlens array that is, a mixed gas in which molecules containing hydrogen and molecules containing fluorine are mixed.
- the resist layer 15 is removed.
- the organic film layer 14 positioned below the resist layer 15 is in the vertical direction.
- a shape having a protruding portion 21 protruding upward is obtained.
- the region corresponding to the vertices 19 and 20 has a shape that protrudes most upward.
- the etching is further advanced, and the etching is terminated when the required shape is obtained.
- the end of etching for example, the vertical length from the upper surface of the color filter layer 13 to the horizontal end portion 23 of the microlens 22 which is the lowest on the upper surface of the organic film layer 14 becomes a predetermined length.
- the etching may be terminated, or the etching may be terminated when a predetermined etching time has elapsed from the start of the processing.
- FIG. 6 shows a schematic cross-sectional view of a part of the microlens array thus obtained.
- 7 is a view of the microlens array shown in FIG. 6 as viewed from the upper side, that is, from the direction of arrow VII in FIG.
- the microlens array 25 is composed of a silicon layer 12, a color filter layer 13, and an organic film layer 14 arranged in order from the lower layer, and on one side, here the upper side
- a plurality of microlenses 22 projecting in a substantially hemispherical shape are provided on the positioned surface.
- the planar shape of the microlens 22 is a substantially elliptical shape that is long in the horizontal direction (see FIG. 7).
- the plurality of microlenses 22 are adjacent to each other. Specifically, a partial region of the horizontal end portion 23 between the adjacent microlenses 22 is not separated and is in a contact state.
- the microlens array according to the present invention is a microlens array having a plurality of microlenses projecting in a substantially hemispherical shape on one surface, and the microlens is disposed on an organic film layer serving as a material layer of the microlens.
- the resist layer for forming the shape is formed, and the formed resist layer and organic film layer are etched using a mixed gas in which molecules containing hydrogen and molecules containing fluorine are mixed.
- the height of the lens 22 can be arbitrarily adjusted by the manufacturing method of the microlens array described above. Specifically, when it is desired to obtain a high height, for example, by increasing the gas flow rate ratio of molecules containing hydrogen, it is possible to easily obtain a microlens array having microlenses having a high height. it can.
- the vertical direction from the horizontal end 23 which is the lowermost part in the vertical direction to the apex 24 which protrudes in a substantially hemispherical shape of the uppermost microlens. Can be obtained with a length H of 0.3 ⁇ m or more.
- the ratio of the vertical length H to the length L between the horizontal end portions 23 is about 1: 5. At least 1: 2 to 1: 6 is obtained.
- the angle formed by the line 26 extending in the horizontal direction at the horizontal end 23 of the microlens and the tangent line 28 of the spherical surface 27 at the horizontal end of the microlens is ⁇ .
- a product with ⁇ ⁇ 35 degrees or at least ⁇ ⁇ 30 degrees or more is obtained.
- the tangent line 28 is indicated by a one-dot chain line.
- a microlens array As described above, according to the method of manufacturing a microlens array according to the present invention, it is easy to adjust the height of the microlens included in the microlens array. As a result, a microlens array having microlenses having a desired height can be easily obtained.
- the microlens array according to the present invention since the height of the microlens in the vertical direction is high, the light condensing degree can be improved.
- FIGS. 8, 9, 10, and 11 are graphs showing the relationship between the flow rate of HBr and the height of the microlens, that is, the length of the microlens in the vertical direction.
- FIG. 9 shows a case where the pressure in the processing
- Each x represents the gas flow rate of HBr, and corresponds to a variable on the horizontal axis of the graphs shown in FIGS. 8 to 11 and FIG. 12 described later.
- the unit of the gas flow rate is sccm.
- the height of the microlens increases as the flow rate of HBr increases.
- the height of the microlens increases as the tendency increases, that is, the flow rate ratio of HBr increases.
- the pressure in the processing container at the time of performing the etching step is 200 mTorr or less. By doing so, the height of the microlens can be adjusted more reliably. Furthermore, it is preferable that the pressure in the processing container when performing the etching step is 150 mTorr or less.
- the ratio of hydrogen-containing molecules to fluorine-containing molecules in the mixed gas is preferably 1: 2 to 1:15. This also makes it possible to adjust the height of the microlens more reliably. Furthermore, the ratio of the molecule containing hydrogen and the molecule containing fluorine in the mixed gas is preferably 1: 2 to 1:10.
- molecules containing fluorine includes CF 4 and C 4 F 8
- the flow rate ratio of CF 4 and C 4 F 8 is 2: 1 to 10: it is preferable to construct so that is a 1. By doing this, The height of the microlens can be adjusted more reliably. Further, the flow rate ratio between CF 4 and C 4 F 8 is preferably 2: 1 to 15: 1.
- FIG. 12 shows the height of the microlens at the top position of the semiconductor substrate as the material to be etched.
- FIG. 13 is a diagram showing the position of the top in the semiconductor substrate.
- the semiconductor substrate 31 has a 180-degree symmetrical position with respect to the center, that is, the position of a so-called center 33, and the portion provided with the notch 32 for positioning in the circumferential direction of the semiconductor substrate 31.
- the top 34 position That is, it is a portion of the semiconductor substrate 31 that is located in the end region farthest from the central portion.
- the microlens height and the HBr flow rate at the position of the top 34 are considered. rare.
- the gas flow rate of HBr is 30 sccm or more, the height of the microlens increases. Therefore, the gas flow rate of HBr is preferably 30 sccm or more in consideration of the height of the microlens at the top position.
- the resist layer in the resist formation step, is formed so as to have a substantially elliptical shape when viewed from the upper side.
- the resist layer may be formed so as to have a shape, and the outer shape of the resist layer may have a straight portion or a corner in the cross section shown in FIG. .
- the plurality of microlenses are configured such that a part of the horizontal end portion is in contact with each other.
- the present invention is not limited thereto, and the horizontal end portions of the microlenses are adjacent to each other. It is good also as a structure which is separated in relation to.
- the most protruding portion of the substantially hemispherical microlens is the apex of the microlens.
- the microlens does not have to be strictly located at the center of the substantially hemispherical microlens.
- the above-described vertical direction and horizontal direction do not mean vertical and horizontal in a strict direction.
- plasma processing using microwaves is performed when performing etching.
- the present invention is not limited to this, and other plasma processing can also be used.
- microlens array manufacturing method and microlens array according to the present invention are effectively used when a higher microlens height is required.
- microlens array material 12 silicon substrate, 13 color filter layer, 14 organic film layer, 15 resist layer, 16, 17, 18 upper surface, 19, 20, 24 apex, 23 end, 21 protruding portion, 22 microlens, 25 micro lens array, 26, 28 lines, 27 spherical surface, 31 semiconductor substrate, 32 notches, 33 center, 34 top.
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Abstract
Description
より確実に、マイクロレンズの高さの調整を行うことができる。さらには、CF4とC4F8との流量比率は、2:1~15:1とすることが好ましい。
Claims (13)
- 一方の面に、略半球面状に突出したマイクロレンズを複数有するマイクロレンズアレイの製造方法であって、
前記マイクロレンズの材料層となる有機膜層の上に前記マイクロレンズの形状を形成するためのレジスト層を形成するレジスト形成工程と、
形成した前記レジスト層および前記有機膜層を、水素を含む分子およびフッ素を含む分子を混合させた混合ガスを用いてエッチングするエッチング工程とを含む、マイクロレンズアレイの製造方法。 - レジスト形成工程は、略半球面状に突出した形状のレジスト層を形成する工程である、請求項1に記載のマイクロレンズアレイの製造方法。
- 前記混合ガスのうちの水素を含む分子のガス流量は、30sccm以上である、請求項1に記載のマイクロレンズアレイの製造方法。
- 前記エッチング工程を行う際の処理容器内の圧力は、200mTorr以下である、請求項1に記載のマイクロレンズアレイの製造方法。
- 前記混合ガス中の前記水素を含む分子と前記フッ素を含む分子との比率は、1:2~1:15である、請求項1に記載のマイクロレンズアレイの製造方法。
- 前記水素を含む分子は、HBrを含む、請求項1に記載のマイクロレンズアレイの製造方法。
- 前記フッ素を含む分子は、その構造式がCxFy(x、yはいずれも1以上の整数)で表される複数のフロン系ガスを含む、請求項1に記載のマイクロレンズアレイの製造方法。
- 前記フッ素を含む分子は、CF4とC4F8とを含み、
前記CF4と前記C4F8との流量比率は、2:1~15:1である、請求項1に記載のマイクロレンズアレイの製造方法。 - 前記エッチング工程は、マイクロ波をプラズマ源としたマイクロ波プラズマにより行なう、請求項1に記載のマイクロレンズアレイの製造方法。
- 一方の面に、略半球面状に突出したマイクロレンズを複数有するマイクロレンズアレイであって、
前記マイクロレンズの材料層となる有機膜層の上に前記マイクロレンズの形状を形成するためのレジスト層を形成し、
形成した前記レジスト層および前記有機膜層を、水素を含む分子およびフッ素を含む分子を混合させた混合ガスを用いてエッチングすることにより得られる、マイクロレンズアレイ。 - 一方の面に、略半球面状に突出したマイクロレンズを複数有するマイクロレンズアレイであって、
前記マイクロレンズにおいて、垂直方向の最下部となる水平方向端部から最上部となる前記マイクロレンズの略半球面状に突出した頂点までの垂直方向の長さが、0.3μm以上である、マイクロレンズアレイ。 - 一方の面に、略半球面状に突出したマイクロレンズを複数有するマイクロレンズアレイであって、
前記マイクロレンズにおいて、垂直方向の最下部となる水平方向端部から最上部となる前記マイクロレンズの略半球面状に突出した頂点までの垂直方向の長さと、水平方向端部間の長さとの比が、1:2~1:6である、マイクロレンズアレイ。 - 一方の面に、略半球面状に突出したマイクロレンズを複数有するマイクロレンズアレイであって、
前記マイクロレンズの水平方向端部において水平方向に延びる線と前記マイクロレンズの水平方向端部における球面の接線とのなす角度をθとした場合に、θ≧30度である、マイクロレンズアレイ。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004330310A (ja) * | 2003-04-30 | 2004-11-25 | Ricoh Co Ltd | 微細形状作製方法 |
JP2005101232A (ja) * | 2003-09-24 | 2005-04-14 | Tokyo Electron Ltd | マイクロレンズの形成方法 |
JP2007036118A (ja) * | 2005-07-29 | 2007-02-08 | Sony Corp | 固体撮像デバイスおよびその製造方法 |
JP2008505497A (ja) * | 2004-06-30 | 2008-02-21 | ラム リサーチ コーポレーション | 二層レジストプラズマエッチングの方法 |
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JP4186238B2 (ja) * | 1996-08-30 | 2008-11-26 | ソニー株式会社 | マイクロレンズアレイの形成方法及び固体撮像素子の製造方法 |
US5948281A (en) * | 1996-08-30 | 1999-09-07 | Sony Corporation | Microlens array and method of forming same and solid-state image pickup device and method of manufacturing same |
JP2928391B2 (ja) * | 1997-01-21 | 1999-08-03 | 松下電器産業株式会社 | パターン形成方法 |
JP4034164B2 (ja) * | 2002-10-28 | 2008-01-16 | 富士通株式会社 | 微細パターンの作製方法及び半導体装置の製造方法 |
JP2004207286A (ja) * | 2002-12-24 | 2004-07-22 | Sony Corp | ドライエッチング方法および半導体装置の製造方法 |
JP2006003422A (ja) * | 2004-06-15 | 2006-01-05 | Fuji Photo Film Co Ltd | パターン形成方法及びtftアレイ基板並びに液晶表示素子 |
JP4761740B2 (ja) * | 2004-08-31 | 2011-08-31 | 東京エレクトロン株式会社 | マイクロレンズの形成方法 |
CN1993303A (zh) * | 2005-05-24 | 2007-07-04 | 松下电器产业株式会社 | 干蚀刻方法、微细结构形成方法、模板及模板的制造方法 |
JP5045057B2 (ja) * | 2006-03-13 | 2012-10-10 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004330310A (ja) * | 2003-04-30 | 2004-11-25 | Ricoh Co Ltd | 微細形状作製方法 |
JP2005101232A (ja) * | 2003-09-24 | 2005-04-14 | Tokyo Electron Ltd | マイクロレンズの形成方法 |
JP2008505497A (ja) * | 2004-06-30 | 2008-02-21 | ラム リサーチ コーポレーション | 二層レジストプラズマエッチングの方法 |
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