WO2010107200A3 - 넓은 동적범위를 갖는 씨모스 이미지 센서 및 그 센싱 방법 - Google Patents

넓은 동적범위를 갖는 씨모스 이미지 센서 및 그 센싱 방법 Download PDF

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Publication number
WO2010107200A3
WO2010107200A3 PCT/KR2010/001494 KR2010001494W WO2010107200A3 WO 2010107200 A3 WO2010107200 A3 WO 2010107200A3 KR 2010001494 W KR2010001494 W KR 2010001494W WO 2010107200 A3 WO2010107200 A3 WO 2010107200A3
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WO
WIPO (PCT)
Prior art keywords
image sensor
dynamic range
wide dynamic
cmos image
sensing method
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PCT/KR2010/001494
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English (en)
French (fr)
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WO2010107200A2 (ko
Inventor
이재웅
조준희
최종범
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(주) 지안
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Publication date
Application filed by (주) 지안 filed Critical (주) 지안
Priority to US13/138,630 priority Critical patent/US8797434B2/en
Publication of WO2010107200A2 publication Critical patent/WO2010107200A2/ko
Publication of WO2010107200A3 publication Critical patent/WO2010107200A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

넓은 동적범위를 갖는 씨모스 이미지 센서 및 그 센싱 방법이 개시된다. 본 발명의 씨모스 이미지 센서의 각 단위 픽셀은 복수 개의 처리부를 포함하여, 한 개 영상 프레임의 이미지 생성을 위한 하나의 셔터링 구간을 복수 개의 구간으로 나누어 각 처리부별로 별도로 셔터링하고 별도로 샘플링한다. 이를 통해, 본 발명의 이미지 센서는 일련의 복수의 셔터링 동작이 복수 개의 처리부에서 각각 이루어지도록 함과 동시에, 셔터링 동작에 따른 각각의 플로팅 디퓨젼 전압을 복수 개의 처리부로 하여금 별도로 샘플링함으로써 넓은 동적범위를 구현한다.
PCT/KR2010/001494 2009-03-16 2010-03-10 넓은 동적범위를 갖는 씨모스 이미지 센서 및 그 센싱 방법 WO2010107200A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/138,630 US8797434B2 (en) 2009-03-16 2010-03-10 CMOS image sensor having wide dynamic range and sensing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0022227 2009-03-16
KR1020090022227A KR101094246B1 (ko) 2009-03-16 2009-03-16 넓은 동적범위를 갖는 씨모스 이미지 센서

Publications (2)

Publication Number Publication Date
WO2010107200A2 WO2010107200A2 (ko) 2010-09-23
WO2010107200A3 true WO2010107200A3 (ko) 2010-11-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/001494 WO2010107200A2 (ko) 2009-03-16 2010-03-10 넓은 동적범위를 갖는 씨모스 이미지 센서 및 그 센싱 방법

Country Status (3)

Country Link
US (1) US8797434B2 (ko)
KR (1) KR101094246B1 (ko)
WO (1) WO2010107200A2 (ko)

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WO2010107200A2 (ko) 2010-09-23
KR101094246B1 (ko) 2011-12-19
US8797434B2 (en) 2014-08-05
US20120033118A1 (en) 2012-02-09
KR20100104074A (ko) 2010-09-29

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