WO2010100702A1 - 成膜方法及び成膜装置 - Google Patents

成膜方法及び成膜装置 Download PDF

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Publication number
WO2010100702A1
WO2010100702A1 PCT/JP2009/006910 JP2009006910W WO2010100702A1 WO 2010100702 A1 WO2010100702 A1 WO 2010100702A1 JP 2009006910 W JP2009006910 W JP 2009006910W WO 2010100702 A1 WO2010100702 A1 WO 2010100702A1
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Prior art keywords
film
electrode
forming method
bias voltage
potential
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English (en)
French (fr)
Inventor
松山秀昭
和田雄人
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Fuji Electric Co Ltd
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Fuji Electric Holdings Ltd
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Priority to CN2009801578904A priority Critical patent/CN102341891A/zh
Priority to DE112009004581T priority patent/DE112009004581T5/de
Priority to US13/254,458 priority patent/US8586484B2/en
Priority to JP2011502513A priority patent/JP5397464B2/ja
Publication of WO2010100702A1 publication Critical patent/WO2010100702A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/22—DC, AC or pulsed generators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/24—Radiofrequency or microwave generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a film forming method and a film forming apparatus for forming a semiconductor film or the like.
  • plasma CVD Chemical Vapor Deposition
  • capacitively coupled CVD Inductively coupled CVD
  • microwave CVD microwave CVD
  • ECR-CVD ECR-CVD
  • Capacitive coupling type CVD excites plasma between a pair of parallel plate electrodes, so that a highly uniform film can be formed with a simple structure compared to other methods.
  • films formed by capacitive coupling CVD include silicon-based thin films, semiconductor films such as SiC, GaAs, and GaN, dielectric films such as SiN x and SiO 2 , diamond, diamond-like carbon thin film (DLC), and BN.
  • semiconductor films such as SiC, GaAs, and GaN
  • dielectric films such as SiN x and SiO 2
  • diamond, diamond-like carbon thin film (DLC), and BN there are a wide variety of thin films such as high hardness films and polymer films.
  • Thin film solar cells have the advantage that the silicon film is as thin as several ⁇ m or less, and the amount of silicon used as a raw material is less than that of bulk crystal silicon solar cells.
  • the characteristics of the thin film formed by the plasma CVD method depend on the plasma state at the time of film formation.
  • the parameters for controlling the plasma state include the electric power to be input, the pressure, the type and flow rate of the source gas.
  • the substrate potential is lower than the plasma potential, some of the ions generated in the plasma are accelerated by the potential difference between the plasma and the substrate and collide with the substrate (ion bombardment).
  • Patent Document 1 describes a method of controlling the stress of a SiN thin film by positively increasing the energy of ion bombardment by applying a negative DC voltage to a substrate.
  • Patent Document 2 discloses that when an amorphous silicon film is formed on a substrate, high-frequency power for generating plasma is input to an electrode on which the substrate is installed, and a positive DC voltage is applied to the electrode. Are listed.
  • Patent Document 3 describes that high-frequency power for plasma generation is input to the cathode electrode, and a DC or AC bias voltage is applied to this electrode. In this technique, the substrate is placed on the anode electrode instead of the cathode electrode. Further, Patent Document 3 describes that the bias voltage is controlled based on the floating potential of the plasma space. Here, the floating potential refers to the cathode electrode when no bias voltage is applied, and means a self-bias voltage generated by plasma. The technique described in Patent Document 3 is conscious of ensuring ion bombardment for improving the film quality of the thin film.
  • the technique described in Patent Document 3 is substantially a technique for applying a bias voltage higher than the floating potential to the cathode electrode.
  • Japanese Patent Laid-Open No. 2-166283 Japanese Patent Laid-Open No. 62-142767 Japanese Patent Laid-Open No. 5-291150 (especially 9th to 16th paragraphs)
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a film forming method and a film forming apparatus capable of improving film quality while suppressing a decrease in film forming speed. There is.
  • the first electrode disposed in the film forming chamber is grounded.
  • the substrate is placed on the first electrode.
  • a second electrode facing the first electrode is disposed in the film forming chamber.
  • a high frequency power and a bias voltage are supplied to the second electrode.
  • plasma CVD is performed, and a film forming process is performed on the substrate.
  • the average potential of the second electrode when the high frequency power and the bias voltage are supplied is set lower than the average potential of the second electrode when the high frequency power is supplied and the bias voltage is not supplied.
  • a substrate is placed on the first electrode disposed in the film formation chamber.
  • a second electrode facing the first electrode is disposed in the film forming chamber.
  • High frequency power is supplied to the second electrode.
  • plasma is generated.
  • a bias voltage is supplied to the first electrode or the second electrode.
  • the film forming apparatus includes a film forming chamber, a first electrode, a second electrode, a high-frequency supply unit, and a measurement wiring.
  • a film formation process is performed on the substrate.
  • the first electrode is disposed in the film forming chamber.
  • the second electrode is disposed in the film forming chamber and faces the first electrode.
  • the high frequency supply unit supplies high frequency power to the second electrode.
  • the measurement wiring is connected to the second electrode in order to measure the potential of the second electrode, and is independent from the power introduction line of the high frequency power.
  • the film quality can be improved while suppressing a decrease in the film formation rate of the film to be formed.
  • Is a graph showing the dependency on the negative DC bias voltage -V b of the DC current I b flowing through the DC-bias applying.
  • Negative DC bias voltage second electrode of the voltage amplitude V 0p against -V b is a graph showing the plasma potential V p, and the bias current I b each dependent.
  • 7 is a graph showing the dependence of the photovoltaic cell photoelectric conversion efficiency on the negative DC bias voltage ⁇ V b and the dependence of the photoelectric conversion light rate on the plasma potential V p .
  • 6 is a graph showing the dependency of a film forming speed and Raman peak height ratio I c / I a on a negative DC bias voltage ⁇ V b .
  • FIG. 1 is a cross-sectional view showing a configuration of a film forming apparatus according to the first embodiment.
  • This film forming apparatus includes a film forming chamber 100, a first electrode 110, a second electrode 120, a high frequency power supply 210 (high frequency supply unit), a DC power supply 310 (bias voltage supply unit), an electrode potential measurement unit 410, and a control unit 420. Is provided.
  • a film formation process is performed on the substrate 10.
  • the first electrode 110 is disposed in the film forming chamber 100 and is grounded.
  • the second electrode 120 is disposed in the film formation chamber 100 and faces the first electrode 110.
  • the high frequency power supply 210 supplies high frequency power to the second electrode 120.
  • the DC power supply 310 inputs a DC bias voltage to the second electrode 120.
  • the electrode potential measurement unit 410 measures the voltage of the second electrode 120.
  • the control unit 420 controls the bias voltage to obtain the average potential of the second electrode 120 when the high frequency power and the bias voltage are supplied, and the second potential when the high frequency power is supplied and the bias voltage is not supplied. Lower than the average potential of the electrode 120.
  • an AC power supply may be provided instead of the DC power supply 310.
  • the bias voltage is an AC voltage whose average voltage is not zero.
  • a film forming process can be performed on the substrate 10 by supplying high-frequency power and a bias voltage to the second electrode 120 and performing plasma CVD.
  • the potential of the second electrode 120 can be made lower than the potential of the second electrode 120 when the high frequency power is supplied and the bias voltage is not supplied.
  • the difference between the plasma potential, which is the plasma potential, and the potential of the substrate 10 is reduced, so that ion bombardment applied to the film being formed can be reduced.
  • the film quality can be improved while suppressing a decrease in the film formation rate.
  • the frequency of the high-frequency power is, for example, 13 MHz or more.
  • the first electrode 110 has a built-in heater for heating the substrate 10.
  • the film forming chamber 100 is provided with an exhaust means (not shown). By controlling the exhaust means and the supply amount of the source gas, the pressure in the film formation chamber 100 can be controlled.
  • the high frequency power supply 210 is connected to the second electrode 120 via the matching unit 220.
  • the DC power supply 310 is connected to the second electrode 120 via a high frequency cut filter 320 provided on a bias voltage supply line that supplies a bias voltage to the second electrode 120.
  • the high frequency cut filter 320 removes the high frequency power including the frequency component of the high frequency power supplied from the high frequency power supply 210. This prevents high-frequency power supplied from the high-frequency power source 210 from flowing to the DC power source 310.
  • the film formed by the film forming apparatus shown in FIG. 1 is, for example, a photoelectric conversion layer or a semiconductor film of a thin film solar cell.
  • the photoelectric conversion layer is, for example, a crystalline semiconductor or an amorphous semiconductor.
  • the crystalline semiconductor is, for example, microcrystalline silicon, and the amorphous semiconductor is, for example, amorphous silicon.
  • the semiconductor film contains, for example, silicon, germanium, and carbon.
  • the source gas introduced into the film forming apparatus has at least one selected from the group consisting of a silicon-containing gas, a carbon-containing gas, and a germanium-containing gas.
  • the source gas may contain a dilution gas (for example, hydrogen or a rare gas), or may contain an impurity gas, for example, diborane or phosphine.
  • the substrate 10 may be made of glass or metal. Further, it is preferable that the film formation surface of the substrate 10 is electrically connected to the first electrode 110.
  • the substrate 10 may have, for example, a structure in which a conductive film is formed on the surface of an insulating base material, or may be entirely formed of a conductive material.
  • the film forming apparatus shown in FIG. 1 further includes a measurement wiring 412.
  • the measurement wiring 412 is connected to the second electrode 120 and is independent of the power introduction line of the high frequency power.
  • the electrode potential measurement unit 410 is connected to the measurement wiring 412 and measures the voltage of the second electrode 120 with respect to the ground potential.
  • the voltage measured here includes the average potential V dc and voltage amplitude V 0p of the second electrode 120.
  • the measurement value of the electrode potential measurement unit 410 is output to the control unit 420.
  • the control unit 420 controls the output of the DC power supply 310 using the measurement value of the electrode potential measurement unit 410. Specifically, the control is performed so that the potential of the second electrode 120 is lower than the potential of the second electrode 120 when the high frequency power is supplied and the bias voltage (DC voltage in this embodiment) is not supplied. Unit 420 controls DC power supply 310.
  • control unit 420 controls the bias voltage to make the plasma potential, which is the plasma potential with respect to the first electrode 110, larger than zero. At this time, the control unit 420 preferably controls the bias voltage to make the plasma potential smaller than the plasma potential when the high frequency power is supplied and the bias voltage is not supplied.
  • the direct current flowing between the first electrode 110 and the second electrode 120 rapidly increases when the plasma potential becomes lower than a specific value.
  • the plasma potential when the film forming process is performed be larger than this specific value, that is, the magnitude of the bias voltage be larger than the value of the bias voltage at this time. The reason for this will be described later.
  • the control unit 420 also functions as a plasma potential calculation unit. Specifically, the control unit 420 sets the average potential of the second electrode 120 with respect to the first electrode 110 (that is, the ground potential) as V dc , sets the voltage amplitude of the second electrode 120 as V 0p , and sets the plasma potential as (V dc + V It is calculated as 0p ) / 2. That is, in this embodiment, the electrode potential measurement unit 410 and the control unit 420 function as a plasma potential measurement unit. Note that the control unit 420 preferably controls the bias voltage so that the plasma potential is less than 100V.
  • V p (t) (V 0p + V dc ) / 2 ⁇ ⁇ 1 + sin (2 ⁇ f ⁇ t) ⁇ (2)
  • the expression (2) is described, for example, in “Plasma Semiconductor Process Engineering”, Uchida Rakutsuru, 2003, pages 38-39. Ions have a much larger mass than electrons and cannot follow high-frequency components in the change in plasma potential. Therefore, the plasma potential V p that affects the behavior of ions is a value obtained by removing high-frequency components from the equation (2), that is, (V 0p + V dc ) / 2.
  • FIG. 2 is a graph schematically showing how the high-frequency potential (that is, the plasma potential) changes between the first electrode 110 and the second electrode 120.
  • the average potential of the high frequency power input to the second electrode 120 is V dc
  • the plasma potential is V p
  • the high frequency amplitude is V 0p .
  • the high-frequency maximum potential, the high-frequency average potential, and the high-frequency minimum potential are all 0 in the first electrode 110.
  • the high-frequency maximum potential and the high-frequency average potential increase in the positive direction and then take a constant value.
  • the high-frequency average potential that is constant at this time corresponds to the plasma potential V p .
  • V 0p > V dc and relationships such as V p > V dc and V 0p > V p are obtained. From the latter relationship, the high-frequency amplitude (which corresponds to the plasma potential V p ) between the first electrode 110 and the second electrode 120 is smaller than the high-frequency amplitude V 0p input to the second electrode 120.
  • the high-frequency maximum potential When approaching the second electrode 120, the high-frequency maximum potential hardly changes, but the high-frequency voltage amplitude increases, and the high-frequency average potential and the high-frequency minimum potential decrease.
  • the high-frequency average potential is V dc and the high-frequency voltage amplitude is V 0p .
  • the potential of the bias voltage input to the second electrode 120 is lower than the potential of the second electrode 120 when the high-frequency power is supplied and the bias voltage is not supplied, the average of the high frequency in the second electrode 120 is obtained.
  • the potential V dc is lowered. Accordingly, the graph shown in FIG. 2 shifts in the direction of lowering overall, except for the ground potential portion (the lowest potential of the first electrode 110 and the plasma portion). For this reason, the plasma potential can be made smaller than the plasma potential when the high frequency power is supplied and the bias voltage is not supplied.
  • FIG. 3 is a diagram for explaining the reason why the ion bombardment on the substrate 10 is reduced when the plasma potential is lowered.
  • the magnitude of ion bombardment is determined by the difference between the plasma potential and the potential of the first electrode 110 (that is, the substrate 10).
  • the plasma potential is reduced, the difference between the plasma potential and the potential of the first electrode 110 is reduced, and ion bombardment on the substrate 10 is reduced.
  • FIG. 4 is a diagram for explaining the reason for controlling the bias voltage so that the bias current becomes smaller than a specific value during the film forming process.
  • the direct current flowing between the first electrode 110 and the second electrode 120 rapidly increases before the plasma potential becomes 0. .
  • the plasma potential becomes lower than this point that is, the bias voltage becomes lower
  • the plasma becomes unstable, causing a problem in film formation.
  • high frequency power for plasma generation is supplied to the second electrode 120. Further, by supplying DC bias power to the second electrode 120, the potential of the second electrode 120 is made lower than when high-frequency power is supplied and bias power is not supplied. Thereby, the plasma potential becomes lower than when the bias voltage is not supplied, and the impact of ions incident on the substrate 10 from the plasma is reduced. This effect becomes significant when the plasma potential V p is less than 100V. When this effect is generated, it is necessary that the substrate 10 is electrically connected to the first electrode 110 so as not to be charged.
  • Such suppression of ion bombardment is effective, for example, in the formation of a photoelectric conversion layer of a thin film solar cell, and the film quality of the formed photoelectric conversion layer is improved.
  • the formation of the film is mainly based on the deposition of neutral radicals, the suppression of ion incidence itself hardly affects the growth rate of the film formed on the substrate 10.
  • the plasma potential is not directly measured, but the plasma potential is calculated from the average potential V dc and voltage amplitude V 0p of the second electrode 120. Therefore, measurement can be performed simultaneously with the actual film formation without affecting the plasma as compared with the case where a Langmuir probe or the like is inserted into the plasma, and the film formation conditions can be fed back.
  • the second electrode 120 and the electrode potential measurement unit 410 are connected via the measurement wiring 412 that is a dedicated wiring for measurement, the potential of the second electrode 120 can be measured with high accuracy. Therefore, the control shown above can be performed with high accuracy.
  • adjustment of the bias voltage may be performed by an operator instead of the control unit 420.
  • FIG. 5 is a diagram showing a configuration of a film forming apparatus according to the second embodiment.
  • the film forming apparatus according to this embodiment has the same configuration as that of the first embodiment, except that the power source to which the bias voltage is applied is the AC power source 312.
  • the AC voltage output from the AC power supply 312 has a smaller frequency than the high frequency output from the high-frequency power supply 210, and the frequency is, for example, 1 MHz or less that ions can follow.
  • the control unit 420 controls the AC power supply 312 by handling the average voltage of the AC power supply 312 in the same manner as the DC voltage when the DC power supply 310 is used.
  • the average voltage of the AC power output from the AC power supply 312 is not 0, and is, for example, a value obtained by superimposing AC and DC or a value obtained by half-wave rectifying the AC.
  • FIG. 6 is a diagram showing a configuration of a film forming apparatus according to the third embodiment.
  • the film forming apparatus according to the present embodiment has the same configuration as the film forming apparatus according to the first embodiment except for the following points.
  • the first electrode 110 is not grounded, but is grounded through a high-pass filter 230 that passes only high-frequency power.
  • a DC power source 310 for inputting a bias voltage is connected to the first electrode 110 via a high frequency cut filter 320.
  • An electrode potential measurement unit 414 for measuring the potential of the first electrode 110 is connected to the first electrode 110 via the measurement wiring 416.
  • the measurement wiring 416 is a wiring different from the wiring connecting the DC power supply 310 and the first electrode 110.
  • the measurement value of the electrode potential measurement unit 414 is output to the control unit 420.
  • the electrode potential measurement unit 410 measures the potential of the second electrode 120 and outputs the measurement result to the control unit 420.
  • the electrode potential measurement unit 414 measures the potential of the first electrode 110 and outputs the measurement result to the control unit 420.
  • the controller 420 controls the bias voltage output from the DC power supply 310 in a direction in which the potential of the first electrode 110 approaches the plasma potential. When the bias voltage is not applied, the plasma potential is positive, so that the applied bias voltage is positive.
  • the control unit 420 calculates the plasma potential by the same method as in the first embodiment.
  • FIG. 7 is a diagram for explaining that ion bombardment on the substrate 10 is reduced according to the present embodiment.
  • the DC power supply 310 inputs a positive voltage to the first electrode 110
  • the potential of the first electrode 110 that is, the potential of the substrate 10 shifts in the positive direction and approaches the plasma potential.
  • the difference between the plasma potential and the potential of the substrate 10 is reduced, and ion bombardment on the substrate 10 is reduced.
  • the present embodiment can provide the same effects as those of the first embodiment.
  • FIG. 8 is a diagram showing a configuration of a film forming apparatus according to the fourth embodiment.
  • This film forming apparatus is the same as that of the third embodiment except that the AC power supply 312 shown in the second embodiment is provided instead of the DC power supply 310. Also according to this embodiment, the same effect as that of the first embodiment can be obtained.
  • FIG. 9 is a diagram showing a configuration of a film forming apparatus according to the fifth embodiment.
  • This film forming apparatus is particularly used for continuous film formation on the substrate 10, and is the same as the film forming apparatus according to any one of the first to fourth embodiments except that continuous film formation is performed. It is the composition.
  • FIG. 9 shows a configuration similar to that of the first embodiment.
  • a flexible substrate 10 is used.
  • the flexible substrate 10 is selected from resin films formed from, for example, polyimide, polyamide, polyimide amide, polyethylene naphthalate, polyethylene terephthalate, polyetherimide, polyetheretherketone, and polyethersulfone.
  • substrate 10 may provide what provided the electroconductive layer on the above-mentioned resin film.
  • metal films such as a flexible stainless steel film, an iron film, a titanium film, and an aluminum film, may be sufficient.
  • the substrate 10 is a resin film provided with a metal film or a conductive layer
  • the substrate 10 is brought into contact with a carry-in port or a carry-out port of the film forming chamber 100 or a roller (not shown) for carrying the film in a portion where the film forming process is not performed.
  • the first electrode 110 and the film formation chamber 100 are electrically connected via the substrate 10.
  • a bias voltage is applied to the first electrode 110, and this embodiment cannot be applied as it is.
  • the conductive film formed on the resin film is cut to provide insulation, or the insulating material is used for the carry-in / carry-out / carrying roller of the film forming chamber 100, the electrical insulation is maintained. Not so. Also according to this embodiment, the same effect as that of the first embodiment can be obtained.
  • Example 1 As a method of measuring the potential of the second electrode 120, a comparison experiment was performed for the case where measurement was performed at the outlet of the matching unit 220 (on the second electrode 120 side of the matching unit 220) and the case where measurement was performed using the measurement wiring 412. .
  • the configuration of the film forming apparatus is the same as that of the first embodiment.
  • source gases 12 sccm of SiH 4 and 1700 sccm of hydrogen were used.
  • the pressure in the deposition chamber 100 was 12 torr, and the temperature of the substrate 10 was 200 ° C.
  • the frequency and power of the high frequency power supply 210 were set to 40 MHz and 50 to 200 W, respectively.
  • An oscilloscope was used as the electrode potential measurement unit 410.
  • the potential measured by the oscilloscope was a sine wave represented by the above-described equation (1), and the frequency was 40 MHz, which is the value of the power supply.
  • FIG. 10 shows the relationship between the high-frequency voltage amplitude V 0p measured by the oscilloscope and the power of the high-frequency power supply 210. Voltage amplitude V 0p of the voltage amplitude V 0p and the second electrode 120 at the outlet of the matching box 220, it was found that the value is greatly different.
  • Measured high-frequency current supplied to the second electrode 120 was a large value of 4A at 50W and 5.7A at 200W. Although no electrical element is connected in particular from the matching unit 220 to the second electrode 120, it is considered that a voltage drop due to the inductance of the conducting wire portion occurred at a high frequency of 40 MHz.
  • Example 2 In superimposing the DC voltage on the second electrode 120, a high frequency cut filter 320 is inserted to prevent a high frequency from flowing from the high frequency power source 210 to the DC power source 310.
  • an oscilloscope was connected after the high frequency cut filter 320 to measure high frequency leakage, but it was out of the detection range.
  • Example 3 Whether or not the plasma potential can be lowered by superimposing a DC voltage on the second electrode 120 was confirmed using an apparatus similar to that of the fifth embodiment.
  • the source gas used was 30 sccm of SiH 4 and 1700 sccm of hydrogen.
  • the pressure in the film forming chamber 100 was 4 torr, and the frequency and power of the high-frequency power source 210 were 27 MHz and 300 W, respectively.
  • An oscilloscope was used as the electrode potential measurement unit 410. Then, the voltage of the second electrode 120 was measured by changing the output voltage Vb of the DC power supply 310 from 0V to ⁇ 350V.
  • FIG. 11 is a graph showing the dependence of the average voltage V dc and voltage amplitude V 0p of the second electrode 120 on the negative DC bias voltage ⁇ V b .
  • FIG. 11 also shows the plasma potential V p calculated as (V 0p + V dc ) / 2.
  • V dc was consistent with V b . For this reason, it was found that the voltage generated by the DC power supply 310 was applied to the second electrode 120 as it was. Further, the self-bias voltage V dc (floating potential) in a state where no DC bias voltage was applied was ⁇ 0, almost 0. It is considered that the potential is also symmetric because of the symmetrical electrode configuration and the relatively high pressure.
  • V 0p increased with ⁇ V b
  • V p decreased as the bias voltage V b increased in the negative direction.
  • V p the plasma potential V p is increased.
  • the plasma potential V p can be controlled by superimposing the DC bias voltage on the second electrode 120.
  • the potential of the second electrode 120 fluctuated and could not be measured.
  • the plasma fluctuated with time, and a stable discharge could not be obtained. It is considered that when the plasma potential Vp is 0 V or less, high-frequency discharge cannot be maintained and the discharge becomes unstable.
  • Figure 12 is a graph showing the dependency on the negative DC bias voltage -V b of the DC current I b flowing through the DC-bias applying.
  • the direct current I b tends to saturate after increasing with ⁇ V b , but when ⁇ V b exceeds 300 V, it starts to increase rapidly.
  • the second electrode 120 side of the sheath with -V b is thickened.
  • the sheath thickness when the bias voltage was not input was about 1 mm
  • V b ⁇ 200 V
  • the plasma was biased toward the first electrode 110 side beyond the center between the electrodes.
  • ⁇ V b > 320 V and the bias current increases rapidly the plasma becomes non-uniform in the direction of the electrode surface and has a distribution within the electrode surface.
  • a part of the sheath of the second electrode 120 reached the first electrode 110 and the plasma appeared to be dispersed on the surface of the first electrode 110. In this state, the average voltage V dc and voltage amplitude V 0p of the second electrode 120 fluctuated and did not become stable values.
  • Example 5 For microcrystalline silicon thin-film solar cells, we verified the improvement in characteristics by reducing ion bombardment. An n-type microcrystalline silicon layer (about 30 nm), an i-type microcrystalline silicon layer (about 2 ⁇ m), a p-type microcrystalline silicon layer (about about 10 nm) are coated on a polyimide film substrate 10 coated with an Ag film as a back electrode. 30 nm), a transparent electrode film made of ITO, and a comb-like electrode made of Ag were sequentially formed. Each microcrystalline silicon layer was formed using a plasma CVD method.
  • the film forming apparatus is an apparatus in which three apparatuses shown in FIG.
  • each layer of the microcrystalline silicon layer is deposited in the order of n layer, i layer, and p layer.
  • the bias voltage was applied only when the i-type microcrystalline silicon layer was formed.
  • As the raw material gas when the time of forming the i-type microcrystalline silicon layer uses SiH 4 and hydrogen gas, to deposit the n-type microcrystalline silicon layer and the p-type microcrystalline silicon layer of, SiH 4 and Phosphine gas and diborane gas were added to hydrogen gas, respectively.
  • the Ag film and the ITO transparent electrode film as the back electrode were formed by sputtering, and the comb-like electrode was formed by vapor deposition.
  • the film forming conditions of the i-type microcrystalline silicon layer which is a photoelectric conversion layer are as follows.
  • the film forming apparatus the film forming apparatus shown in the fifth embodiment was used.
  • the flow rates of the source gases were 20 sccm for SiH 4 and 1700 sccm for hydrogen.
  • the pressure in the film formation chamber 100 was 4 torr, and the substrate temperature was 200 ° C.
  • the frequency and power of the high-frequency power source 210 were 27 MHz and 300 W, respectively.
  • DC bias voltage V b which overlaps with the second electrode 120, without (floating potential: -3 V), - and 50 V, -100 V, -200 V, and a -300 V. Since the substrate 10 was in contact with the first electrode 110 and both ends of the substrate 10 were also in contact with the film forming chamber 100, the substrate 10 was at ground potential.
  • the degree of crystallization of silicon was evaluated by Raman spectroscopy.
  • the characteristics of the produced microcrystalline silicon thin film solar cell were measured with a solar simulator.
  • the photoelectric conversion efficiency was measured by setting the intensity of light at this time to 100 mW / cm 2 .
  • Table 1 shows the measurement results and the film formation rate.
  • FIG. 14 shows the negative DC bias voltage ⁇ V b dependency of photoelectric conversion efficiency and the plasma potential V p dependency of photoelectric conversion light rate when the SiH 4 flow rate is 20 sccm.
  • the negative DC bias ⁇ V b increases, the photoelectric conversion efficiency increases. Further, the photoelectric conversion efficiency was improved as the plasma potential was decreased. That the photoelectric conversion efficiency is improved by applying the bias voltage Vb so that the potential with respect to the first electrode 110 when the bias voltage Vb is not applied is lower than the potential of the second electrode 120 (floating potential). Recognize.
  • the plasma potential by applying a bias voltage V b to be lower than the plasma potential to the first electrode 110 when applying no bias voltage V b, it can be said that the photoelectric conversion efficiency is improved. Moreover, this is considered to be because the film quality was improved by reducing ion bombardment.
  • the characteristics of the microcrystalline silicon thin film solar cell are improved by applying a DC bias voltage Vb lower than the floating potential to the second electrode 120.
  • Vb DC bias voltage
  • the photoelectric conversion efficiency is maximum when the plasma potential V p is 100 V or less.
  • the bias voltage during the film forming process it has been found that it is preferable to set the bias voltage during the film forming process to be equal to or less than a value at which the plasma potential is larger than a specific value.
  • FIG. 15 shows the negative DC bias voltage dependency of the ratio I c / I a between the film formation speed and the Raman peak height.
  • I c / I a tended to increase with a negative DC bias voltage. Since the microcrystalline silicon thin film solar cell has good characteristics near the boundary between amorphous silicon and crystalline silicon, I c / I a is preferably larger than 1 and close to 1. For this reason, it is predicted that the solar cell characteristics can be further improved while increasing the film forming rate by increasing the flow rate of SiH 4 and decreasing the crystallization rate. This was confirmed in Example 6 described later.
  • Example 6 In the experiment of Example 5, a microcrystalline silicon thin film solar cell was manufactured by changing the SiH 4 gas flow rate in the film forming conditions of the i-type microcrystalline silicon layer. And the measurement similar to Example 6 was performed with respect to the produced sample. Table 2 shows the measurement results and the film formation rate.

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Abstract

成膜室では、基板に成膜処理が行われる。第１電極は、成膜室内に配置され、接地されている。第２電極は、成膜室内に配置され、第１電極に対向している。高周波電源は、第２電極に高周波電力を供給する。直流電源は、第２電極に直流のバイアス電圧を入力する。制御部は、バイアス電圧を、高周波電力が供給されていてバイアス電圧が供給されていないときの第２電極の電位より低くする。これにより、成膜される膜の成膜速度が低下することを抑制しつつ、膜質を向上させることができる。

Description

成膜方法及び成膜装置
　本発明は、半導体膜などを成膜する成膜方法及び成膜装置に関する。
　薄膜を成膜する方法として、プラズマＣＶＤ（Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ）が広く用いられている。プラズマＣＶＤには、容量結合型ＣＶＤ、誘導結合型ＣＶＤ、マイクロ波ＣＶＤ、ＥＣＲ－ＣＶＤなど多くの方法が存在するが、これらのうち最も広く用いられているのは容量結合型ＣＶＤである。容量結合型ＣＶＤは、１対の平行平板電極間にプラズマを励起するため、他の方法と比較して簡単な構造で均一性が高い膜を成膜できる。
　容量結合型ＣＶＤによって成膜される膜には、シリコン系薄膜、ＳｉＣ、ＧａＡｓ、ＧａＮなどの半導体膜、ＳｉＮｘ、ＳｉＯ２などの誘電体膜、ダイヤモンド、ダイヤモンド状カーボン薄膜（ＤＬＣ）、ＢＮなどの高硬度膜、高分子膜など多種多様の薄膜がある。
　シリコン系薄膜の用途の一つに、薄膜太陽電池がある。薄膜太陽電池は、シリコン膜の厚さが数μｍ以下と薄く、バルク結晶シリコン太陽電池に比べて原料であるシリコン使用量が少ないという利点を有している。
　プラズマＣＶＤ法によって形成される薄膜の特性は、成膜時のプラズマの状態に依存する。プラズマの状態を制御するパラメータとしては、投入する電力、圧力、原料ガスの種類や流量などがある。一方、基板の電位はプラズマの電位より低いため、プラズマ中で生成したイオンの一部は、プラズマと基板の電位差によって加速し、基板に衝突する（イオン衝撃）。例えば特許文献１には、基板に負の直流電圧を印加することにより、イオン衝撃のエネルギーを積極的に大きくして、ＳｉＮ薄膜の応力を制御する方法が記載されている。
　また特許文献２には、アモルファスシリコン膜を基板に成膜するときに、基板を設置している電極にプラズマ生成用の高周波電力を入力し、かつこの電極に正の直流電圧を印加することが記載されている。
　また特許文献３には、カソード電極にプラズマ生成用の高周波電力を入力し、かつこの電極に直流又は交流のバイアス電圧を印加することが記載されている。この技術において、基板は、カソード電極ではなくアノード電極に設置される。さらに特許文献３には、バイアス電圧を、プラズマ空間のフローティング電位に基づいて制御することも記載されている。ここでフローティング電位とは、バイアス電圧を印加しないときのカソード電極を指しており、プラズマによって発生するセルフバイアス電圧を意味している。なお特許文献３に記載の技術は、薄膜の膜質を向上させるためのイオン衝撃を確保することを意識している。そして、バイアス電圧を印加することにより、カソード電位をフローティング電位以上に上げることで、プラズマ電位を上昇させ、これにより、アノード電極上の基板に入射するイオン衝撃を大きくしている。このことから、特許文献３に記載の技術は、実質的には、カソード電極にフローティング電位以上のバイアス電圧を印加する技術である。
特開平２－１６６２８３号公報 特開昭６２－１４２７６７号公報 特開平５－２９１１５０号公報（特に第９段落～第１６段落）
　プラズマＣＶＤにおいて、成膜速度が低下することを抑制しつつ、膜質を向上させることは重要である。しかし成膜される膜の種類及び用途によっては、特許文献１～３に記載の技術では成膜速度の維持と膜質の向上を両立させることは難しかった。
　本発明は上記事情に鑑みてなされたものであり、その目的とするところは、成膜速度が低下することを抑制しつつ、膜質を向上させることができる成膜方法及び成膜装置を提供することにある。
　本発明に係る第１の成膜方法において、成膜室内に配置された第１電極は接地される。基板は、第１電極に設置される。成膜室内には、第１電極に対向している第２電極が配置されている。第２電極には、高周波電力及びバイアス電圧が供給される。これにより、プラズマＣＶＤが行われ、基板に成膜処理が行われる。このとき、高周波電力及びバイアス電圧を供給したときの第２電極の平均電位を、高周波電力が供給されていてバイアス電圧が供給されていないときの第２電極の平均電位より低くする。
　本発明に係る第２の成膜方法において、成膜室内に配置された第１電極には基板が設置される。成膜室内には、第１電極に対向している第２電極が配置されている。第２電極には、高周波電力が供給される。これにより、プラズマが発生する。第１電極又は第２電極にはバイアス電圧が供給される。そして、第１電極に対する第２電極の平均電位をＶｄｃとして、第１電極に対する第２電極の電圧振幅をＶ０ｐとした場合、プラズマ電位を（Ｖｄｃ＋Ｖ０ｐ）／２として、バイアス電圧をプラズマ電位に基づいて制御してプラズマＣＶＤを行う。
　本発明に係る成膜装置は、成膜室、第１電極、第２電極、高周波供給部、及び測定用配線を備える。成膜室では、基板に成膜処理が行われる。第１電極は、成膜室内に配置されている。第２電極は、成膜室内に配置され、第１電極に対向している。高周波供給部は、第２電極に高周波電力を供給する。測定用配線は、第２電極の電位を測定するために第２電極に接続されており、高周波電力の電力導入線から独立している。
　本発明によれば、成膜される膜の成膜速度が低下することを抑制しつつ、膜質を向上させることができる。
第１の実施形態に係る成膜装置の構成を示す断面図である。 第１電極と第２電極の間にプラズマが形成されたときの両電極間における電圧の様子を示す図である。 プラズマ電位が低くなると基板に対するイオン衝撃が小さくなる理由を説明するための図である。 成膜処理を行っているときのバイアス電流が特定の値より小さくなるようにバイアス電圧を制御する理由を説明するための図である。 第２の実施形態に係る成膜装置の構成を示す図である。 第３の実施形態に係る成膜装置の構成を示す図である。 基板の電位を上げることでイオン衝撃が小さくなることを説明するための図である。 第４の実施形態に係る成膜装置の構成を示す図である。 第５の実施形態に係る成膜装置の構成を示す図である。 オシロスコープによって計測された高周波の電圧振幅Ｖ０ｐの測定結果が測定位置によって影響を受けることを示す図である。 負の直流バイアス電圧‐Ｖｂに対する第２電極の平均電圧Ｖｄｃ、電圧振幅Ｖ０ｐ、及びプラズマ電位Ｖｐの依存性を示すグラフである。 直流バイアス印加によって流れる直流電流Ｉｂの負の直流バイアス電圧‐Ｖｂに対する依存性を示すグラフである。 負の直流バイアス電圧－Ｖｂに対する第２電極の電圧振幅Ｖ０ｐ、プラズマ電位Ｖｐ、及びバイアス電流Ｉｂそれぞれの依存性を示すグラフである。 負の直流バイアス電圧－Ｖｂに対する太陽電池の光電変換効率の依存性、及びプラズマ電位Ｖｐに対する光電変換光率の依存性を示すグラフである。 負の直流バイアス電圧－Ｖｂに対する成膜速度およびラマンピーク高さの比Ｉｃ／Ｉａの依存性を示すグラフである。
　以下、本発明の実施の形態について、図面を用いて説明する。尚、すべての図面において、同様な構成要素には同様の符号を付し、適宜説明を省略する。
　図１は、第１の実施形態に係る成膜装置の構成を示す断面図である。この成膜装置は、成膜室１００、第１電極１１０、第２電極１２０、高周波電源２１０（高周波供給部）、直流電源３１０（バイアス電圧供給部）、電極電位測定部４１０、及び制御部４２０を備える。成膜室１００では、基板１０に成膜処理が行われる。第１電極１１０は、成膜室１００内に配置され、接地されている。第２電極１２０は、成膜室１００内に配置され、第１電極１１０に対向している。高周波電源２１０は、第２電極１２０に高周波電力を供給する。直流電源３１０は、第２電極１２０に直流のバイアス電圧を入力する。電極電位測定部４１０は、第２電極１２０の電圧を計測する。制御部４２０は、バイアス電圧を制御することにより、高周波電力及びバイアス電圧を供給したときの第２電極１２０の平均電位を、高周波電力が供給されていてバイアス電圧が供給されていないときの第２電極１２０の平均電位より低くする。なお、直流電源３１０の代わりに交流電源を設けても良い。この場合、バイアス電圧は、平均電圧が０ではない交流電圧になる。
　図１に示した成膜装置を用いると、第２電極１２０に、高周波電力及びバイアス電圧を供給してプラズマＣＶＤを行うことにより、基板１０に成膜処理を行うことができる。そして成膜処理において、バイアス電圧を制御することにより、第２電極１２０の電位を高周波電力が供給されていてバイアス電圧が供給されていないときの第２電極１２０の電位より低くすることができる。このようにすると、プラズマの電位であるプラズマ電位と基板１０の電位の差が小さくなるため、成膜されている膜に加わるイオン衝撃を小さくすることができる。これにより、詳細を後述するように、成膜速度が低下することを抑制しつつ、膜質を向上させることができる。
　なお、高周波電力の周波数は、例えば１３ＭＨz以上である。また第１電極１１０は、基板１０を加熱するためのヒータを内蔵している。また成膜室１００には排気手段（図示せず）が設けられている。排気手段及び原料ガスの供給量を制御することにより、成膜室１００の中の圧力を制御することができる。
　高周波電源２１０は、整合器２２０を介して第２電極１２０に接続されている。直流電源３１０は、第２電極１２０にバイアス電圧を供給するバイアス電圧供給線に設けられた高周波数カットフィルタ３２０を介して、第２電極１２０に接続されている。高周波数カットフィルタ３２０は、高周波電源２１０から供給される高周波電力の周波数成分を含む高周波電力を除去する。これにより、高周波電源２１０から供給される高周波電力が直流電源３１０に流れることが防止される。
　図１に示した成膜装置によって成膜される膜は、例えば薄膜太陽電池の光電変換層や半導体膜である。光電変換層は、例えば結晶半導体又はアモルファス半導体である。結晶半導体は、例えば微結晶シリコンであり、アモルファス半導体は、例えばアモルファスシリコンである。また、半導体膜は、例えばシリコン、ゲルマニウム、及び炭素を含有している。そして、このような半導体膜を形成する場合、成膜装置に導入される原料ガスはシリコン含有ガス、炭素含有ガス、ゲルマニウム含有ガスからなる群から選ばれた少なくとも一つを有する。なお、この原料ガスには、希釈ガス（例えば水素や希ガス）が含まれていても良いし、不純物ガス、例えばジボランやホスフィンを含んでいても良い。
　基板１０は、ガラス又は金属により形成されていても良い。また、基板１０は、成膜面が第１電極１１０と導通しているのが好ましい。このためには、基板１０は、例えば絶縁性の基材の表面に導電性の膜を成膜した構造を有していてもよく、導電性の材料により全体が形成されていても良い。
　また図１に示した成膜装置は測定用配線４１２をさらに備える。測定用配線４１２は第２電極１２０に接続されており、高周波電力の電力導入線から独立している。電極電位測定部４１０は測定用配線４１２に接続されており、接地電位に対する第２電極１２０の電圧を測定する。ここで測定される電圧には、第２電極１２０の平均電位Ｖｄｃ及び電圧振幅Ｖ０ｐが含まれる。電極電位測定部４１０の測定値は、制御部４２０に出力される。
　制御部４２０は、電極電位測定部４１０の測定値を用いて直流電源３１０の出力を制御する。具体的には、第２電極１２０の電位が、高周波電力が供給されていてバイアス電圧（本実施形態では直流電圧）が供給されていないときの第２電極１２０の電位より低くなるように、制御部４２０は直流電源３１０を制御する。
　さらに制御部４２０は、バイアス電圧を制御することにより、第１電極１１０に対するプラズマの電位であるプラズマ電位を、０より大きくする。このとき制御部４２０は、バイアス電圧を制御することにより、プラズマ電位を、高周波電力が供給されていてバイアス電圧が供給されていないときのプラズマ電位より小さくするのが好ましい。
　ここで、バイアス電圧を制御してプラズマ電位を０に近づけていったとき、第１電極１１０と第２電極１２０の間を流れる直流電流は、プラズマ電位が特定の値より低くなったときに急激に増加する。成膜処理を行っているときのプラズマ電位をこの特定の値より大きくする、すなわちバイアス電圧の大きさをこのときのバイアス電圧の値より大きくすることが好ましい。この理由については後述する。
　なお、成膜中にプラズマ電位を測定することは非常に難しい。そこで本実施形態では、制御部４２０はプラズマ電位算出部としても機能する。具体的には制御部４２０は、第１電極１１０（すなわち接地電位）に対する第２電極１２０の平均電位をＶｄｃとして、第２電極１２０の電圧振幅をＶ０ｐとして、プラズマ電位を（Ｖｄｃ＋Ｖ０ｐ）／２として算出する。すなわち本実施形態において、電極電位測定部４１０と制御部４２０は、プラズマ電位測定部として機能する。なお、制御部４２０は、バイアス電圧を制御することにより、上記したプラズマ電位を１００Ｖ未満にするのが好ましい。
　ここで、上記した方法によって算出されたプラズマ電位の妥当性を説明する。オシロスコープで第２電極１２０の電位Ｖｃ（ｔ）を測定したとき、電位Ｖｃ（ｔ）は、平均電位Ｖｄｃ、電圧振幅Ｖ０ｐ、高周波の周波数ｆ、及び時間ｔを用いて、以下の（１）式のように示される。
　　　Ｖｃ（ｔ）＝Ｖ０ｐ×sin（２πｆ×ｔ）＋Ｖｄｃ　・・・・・（１）
　一方、プラズマの電位の時間変化ｖp（ｔ）は、以下の（２）式のように示される。
　　　Ｖｐ（ｔ）＝（Ｖ０ｐ＋Ｖｄｃ）／２×｛１＋sin(２πｆ×ｔ)｝　・・・・・（２）
　なお、（２）式は、例えば「プラズマ半導体プロセス工学」、内田労鶴圃、２００３年、３８-３９ページに記載されている。
　イオンは電子に比べて質量が非常に大きく、プラズマ電位の変化のうち高周波成分には追従できない。このため、イオンの挙動に影響を与えるプラズマ電位Ｖｐは、（２）式から高周波成分を除去した値、すなわち（Ｖ０ｐ＋Ｖｄｃ）／２となる。
　次に、図２を用いて、上記の電圧の関係について説明する。図２は、第１電極１１０と第２電極１２０の間で高周波の電位（すなわちプラズマの電位）がどのように変化しているかを模式的に示すグラフである。この図において、第２電極１２０に入力される高周波電力の平均電位をＶｄｃ、プラズマ電位をＶｐ、高周波の振幅をＶ０ｐとする。
　第１電極１１０は接地されているため、第１電極１１０において、高周波の最高電位、高周波の平均電位、及び高周波の最低電位は、何れも０になる。そして第１電極１１０から離れるにつれて、高周波の最高電位及び高周波の平均電位は正の方向に増加し、その後一定値を取る。このとき一定となった高周波の平均電位が、プラズマ電位Ｖｐに相当する。なお、上記の関係は、Ｖ０ｐ＞Ｖdcのときに成立するものであり、Ｖp＞ＶdcやＶ０ｐ＞Ｖpなどの関係が得られる。後者の関係から、第１電極１１０と第２電極１２０の間において高周波の振幅（これはプラズマ電位Ｖpに対応）は、第２電極１２０に入力される高周波の振幅Ｖ０ｐより小さい。
　そして第２電極１２０に近づくと、高周波の最高電位はほとんど変化しないが、高周波の電圧振幅が増加し、高周波の平均電位及び高周波の最低電位が減少していく。そして第２電極１２０において、高周波の平均電位はＶｄｃになり、また高周波の電圧振幅はＶ０ｐになる。
　ここで、第２電極１２０に入力するバイアス電圧の電位を、高周波電力が供給されていてバイアス電圧が供給されていないときの第２電極１２０の電位より低くすると、第２電極１２０における高周波の平均電位Ｖｄｃが低くなる。また、それにつれて図２に示したグラフは、アース電位の部分（第１電極１１０及びプラズマ部分の最低電位）を除いて、全体的に低くなる方向にシフトする。このため、プラズマ電位を、高周波電力が供給されていてバイアス電圧が供給されていないときのプラズマ電位より、小さくすることができる。
　図３は、プラズマ電位が低くなると基板１０に対するイオン衝撃が小さくなる理由を説明するための図である。イオン衝撃の大きさは、プラズマ電位と第１電極１１０の電位（すなわち基板１０）の差によって定まる。プラズマ電位が小さくなると、プラズマ電位と第１電極１１０の電位の差が小さくなり、基板１０に対するイオン衝撃が小さくなる。
　図４は、成膜処理を行っているときにバイアス電流が特定の値より小さくなるようにバイアス電圧を制御する理由を説明するための図である。上記したように、バイアス電圧を下げてプラズマ電位を０に近づけていったとき、プラズマ電位が０となる前に、第１電極１１０と第２電極１２０の間を流れる直流電流が急激に増加する。そしてこの地点よりプラズマ電位が低くなる（すなわちバイアス電圧が低くなる）と、プラズマが不安定になり、成膜に問題が生じる。このため、成膜処理を行うときは、バイアス電圧、つまり、プラズマ電位をバイアス電流が急増する地点での値より大きくすることが好ましい。
　次に、本実施形態の作用及び効果について説明する。本実施形態によれば、プラズマ生成用の高周波電力を第２電極１２０に供給している。そして第２電極１２０に、さらに直流のバイアス電力を供給することにより、第２電極１２０の電位を、高周波電力が供給されていてバイアス電力が供給されていないときよりも低くする。これにより、プラズマ電位が、バイアス電圧が供給されていないときよりも低くなり、プラズマから基板１０に入射するイオンの衝撃が小さくなる。この作用は、プラズマ電位Ｖｐが１００Ｖ未満のときに顕著になる。この作用を生じさせるとき、基板１０が帯電しないように第１電極１１０と導通している必要がある。このようなイオン衝撃の抑制は、例えば薄膜太陽電池の光電変換層の形成において有効であり、成膜される光電変換層の膜質が改善される。一方、膜の形成は主に中性ラジカルの堆積によっているので、イオン入射の抑制自体が基板１０に形成される膜の成長速度へ影響することは少ない。
　また、プラズマ電位を直接測定するのではなく、第２電極１２０の平均電位Ｖｄｃ及び電圧振幅Ｖ０ｐによってプラズマ電位を算出している。このため、ラングミューラプローブ等をプラズマ中に挿入する場合と比較してプラズマに影響を与えることなく、実際の膜の形成と同時に計測が可能であり、成膜条件にフィードバックをかけることができる。
　また、第２電極１２０と電極電位測定部４１０とを、測定専用の配線である測定用配線４１２を介して接続しているため、第２電極１２０の電位の測定を精度よく行うことができる。従って、上記に示した制御を精度よく行うことができる。
　なお本実施形態において、バイアス電圧の調整は、制御部４２０ではなく作業者が行っても良い。
　図５は、第２の実施形態に係る成膜装置の構成を示す図である。本実施形態に係る成膜装置は、バイアス電圧を印加する電源が交流電源３１２である点を除いて、第１の実施形態と同様の構成である。交流電源３１２が出力する交流電圧は、高周波電源２１０が出力する高周波より周波数が小さく、その周波数はイオンが追従できる例えば１ＭＨｚ以下である。そして制御部４２０は、交流電源３１２の平均電圧を、直流電源３１０を用いたときの直流電圧と同様に扱うことで、交流電源３１２を制御する。すなわち交流電源３１２から出力される交流電力の平均電圧は、０ではなく、例えば、交流と直流を重畳したものや交流を半波整流したものである。
　本実施形態によっても、交流電圧の振幅が大きくないときは第１の実施形態と同様の効果を得ることができる。
　図６は、第３の実施形態に係る成膜装置の構成を示す図である。本実施形態に係る成膜装置は、以下の点を除いて第１の実施形態に係る成膜装置と同様の構成である。まず、第１電極１１０が接地されていなく、高周波電力のみを通すハイパスフィルタ２３０を介して接地される。また、バイアス電圧を入力する直流電源３１０が高周波数カットフィルタ３２０を介して第１電極１１０に接続されている。そして、第１電極１１０の電位を測定するための電極電位測定部４１４が、測定用配線４１６を介して第１電極１１０に接続されている。測定用配線４１６は、直流電源３１０と第１電極１１０を接続する配線とは別の配線である。電極電位測定部４１４の測定値は、制御部４２０に出力される。
　本実施形態では、電極電位測定部４１０は、第２電極１２０の電位を測定し、測定結果を制御部４２０に出力する。電極電位測定部４１４は、第１電極１１０の電位を測定し、測定結果を制御部４２０に出力する。制御部４２０は、第１電極１１０の電位がプラズマ電位に近づく方向に、直流電源３１０が出力するバイアス電圧を制御する。バイアス電圧を印加しないときはプラズマ電位が正なので、印加するバイアス電圧は正となる。プラズマ電位は、第１の実施形態と同様の方法によって制御部４２０が算出する。
　図７は、本実施形態によって基板１０に対するイオン衝撃が小さくなることを説明するための図である。直流電源３１０が正の電圧を第１電極１１０に入力すると、第１電極１１０の電位、すなわち基板１０の電位は正の方向にシフトし、プラズマ電位に近づく。この結果、プラズマ電位と基板１０の電位の差が小さくなり、基板１０に対するイオン衝撃が小さくなる。
　従って、本実施形態によっても第１の実施形態と同様の効果を得ることができる。
　図８は、第４の実施形態に係る成膜装置の構成を示す図である。この成膜装置は、直流電源３１０の代わりに、第２の実施形態に示した交流電源３１２を有している点を除いて、第３の実施形態と同様である。
　本実施形態によっても、第１の実施形態と同様の効果を得ることができる。
　図９は、第５の実施形態に係る成膜装置の構成を示す図である。この成膜装置は、特に基板１０に対して連続成膜を行う場合のものであり、連続成膜を行う点を除いて第１～第４のいずれかの実施形態に係る成膜装置と同様の構成である。なお図９には、第１の実施形態と類似の構成を図示している。
　本実施形態のような連続成膜においては、可撓性を有する基板１０を用いる。可撓性を有する基板１０としては、例えばポリイミド、ポリアミド、ポリイミドアミド、ポリエチレンナフタレート、ポリエチレンテレフタレート、ポリエーテルイミド、ポリエーテルエーテルケトン、及びポリエーテルスルホンなどから形成された樹脂フィルムの中から選ばれる。そして、基板１０は上記した樹脂フィルム上に導電性の層を設けたものであってもよい。また、可撓性を有するステンレスフィルム、鉄フィルム、チタンフィルム、アルミニウムフィルムなどの金属フィルムであってもよい。
　基板１０が金属フィルムや導電性の層を設けた樹脂フィルムの場合、成膜処理が行われていない部分において成膜室１００の搬入口や搬出口またはフィルムを搬送するローラ（図示しない）に接する。したがって、第１電極１１０と成膜室１００は、基板１０を介して導通することになる。このため、第１と第２の実施形態に係る成膜装置に関しては、特に、問題はない。しかし、第３と第４の実施形態に係る成膜装置に関しては、第１電極１１０にバイアス電圧を印加する方式であり、このままではこの実施形態は適用できない。ただし、樹脂フィルム上に形成した導電性膜を切断して絶縁性を持たせたり、成膜室１００の搬入口・搬出口・搬送ローラに絶縁材料を用いて電気的な絶縁を保った場合はその限りではない。本実施形態によっても、第１の実施形態と同様の効果を得ることができる。
　以上、図面を参照して本発明の実施形態について述べたが、これらは本発明の例示であり、上記以外の様々な構成を採用することもできる。例えば上記した各実施形態では、成膜装置について述べたが、ドライエッチング装置において、上記した各実施形態と同様のバイアス電圧を入力しても良い。これによって、イオン衝撃によるダメージが少ないエッチングが可能となる。
（実施例１）
　第２電極１２０の電位を測定する方法として、整合器２２０の出口（整合器２２０の第２電極１２０側）で測定した場合と、測定用配線４１２を用いて測定した場合について比較実験を行った。
　成膜装置の構成は、第１の実施形態と同様である。原料ガスには、ＳｉＨ４を１２ｓｃｃｍ、水素を１７００ｓｃｃｍ用いた。成膜室１００の圧力は１２ｔｏｒｒとして、基板１０の温度を２００℃とした。高周波電源２１０の周波数及び電力をそれぞれ４０ＭＨｚ及び５０～２００Ｗとした。電極電位測定部４１０としてはオシロスコープを用いた。
　オシロスコープによって計測された電位は、上記した（１）式で表されるサイン波であり、周波数は電源の値である４０ＭＨｚであった。
　図１０は、オシロスコープによって計測された高周波の電圧振幅Ｖ０ｐと高周波電源２１０の電力の関係を示す。整合器２２０の出口における電圧振幅Ｖ０ｐと第２電極１２０における電圧振幅Ｖ０ｐは、値が大きく違うことがわかった。
　第２電極１２０に供給される高周波電流を計測してみると、５０Ｗで４Ａ、２００Ｗで５．７Ａと大きな値であった。整合器２２０から第２電極１２０までに特に電気素子は接続されていないが、４０ＭＨｚという高周波では導線部のインダクタンスにともなう電圧降下が発生したものと考えられる。
　この結果から、第２電極１２０の電位によってバイアス電圧を制御するためには、専用配線である測定用配線４１２を用いた方が良いことが分かった。
（実施例２）
　第２電極１２０へ直流電圧を重畳するにあたり、高周波電源２１０より直流電源３１０へ高周波が流れるのを阻止する高周波数カットフィルタ３２０を挿入している。この効果を確認するために、高周波数カットフィルタ３２０の後段にオシロスコープを接続して高周波の漏れを測定したが、検出範囲外であった。
　（実施例３）
　第２電極１２０へ直流電圧を重畳することによって、プラズマ電位を下げることができるかを、第５の実施形態と同様の装置を用いて確かめた。
　原料ガスには、ＳｉＨ４を３０ｓｃｃｍ、水素を１７００ｓｃｃｍ用いた。成膜室１００の圧力は４ｔｏｒｒとして、高周波電源２１０の周波数及び電力をそれぞれ２７ＭＨｚ及び３００Ｗとした。電極電位測定部４１０としてはオシロスコープを用いた。そして、直流電源３１０の出力電圧Ｖｂを０Ｖから－３５０Ｖまで変化させて、第２電極１２０の電圧を測定した。基板１０としては、Ａｇの薄膜をコーティングしたポリイミドフィルムを使用した。基板１０の両端は、成膜室１００に接していたため、基板１０は接地電位になっていた。
　図１１は、第２電極１２０の平均電圧Ｖｄｃと電圧振幅Ｖ０ｐの負の直流バイアス電圧‐Ｖｂに対する依存性を示すグラフである。図１１には、（Ｖ０ｐ＋Ｖｄｃ）／２として算出されるプラズマ電位Ｖｐも合わせて図示した。
　ＶｄｃはＶｂと一致していた。このため、直流電源３１０で発生した電圧が第２電極１２０にそのまま印加されたことがわかった。また、直流バイアス電圧を印加しない状態でのセルフバイアス電圧Ｖｄｃ（フローティング電位）は－２Ｖとほぼ０であった。対称的な電極構成や比較的高い圧力であったため、電位も対称的になったものと考えられる。
　一方、Ｖ０ｐは－Ｖｂとともに増加したが、プラズマ電位Ｖｐはバイアス電圧Ｖｂが負の方向に大きくなるにつれて低下した。逆に正の直流バイアスを印加した場合、プラズマ電位Ｖｐは増加した。このように、直流バイアス電圧を第２電極１２０に重畳することで、プラズマ電位Ｖｐを制御できることがわかった。なお、Ｖｂ＝－３５０Ｖ程度でプラズマ電位Ｖｐ＝０Ｖになると見積もられるが、第２電極１２０の電位が変動して計測できなかった。実際、プラズマは時間的に変動し、安定した放電が得られなかった。プラズマ電位Ｖｐが０Ｖ以下では高周波放電が維持できなく、放電が不安定になったものと考えられる。
　図１２は、直流バイアス印加によって流れる直流電流Ｉｂの負の直流バイアス電圧‐Ｖｂに対する依存性を示すグラフである。直流電流Ｉｂは－Ｖｂとともに増加した後、飽和する傾向を示すが、－Ｖｂが３００Ｖを越えると急激な増加に転じる。その境界は、本実施例では約３２０Ｖであり、プラズマ電位Ｖｐが零となる負バイアス電圧（－Ｖｂ=３５０Ｖ）よりやや小さかった。
　また、－Ｖｂとともに第２電極１２０側のシースが厚くなった。バイアス電圧を入力しないときのシース厚さは１ｍｍ程度であったものが、Ｖｂ＝－２００Ｖでは電極間の中央を越えてプラズマが第１電極１１０側に偏った状態となった。その後、－Ｖｂ＞３２０Ｖとなってバイアス電流が急増すると、プラズマは電極面方向に不均一となり、電極面内で分布を持つようになる。第２電極１２０のシースの一部が第１電極１１０に達し、プラズマが第１電極１１０の表面上に分散しているように見えた。この状態において、第２電極１２０の平均電圧Ｖｄｃ及び電圧振幅Ｖ０ｐはふらつき、安定した値とならなかった。
　以上より、第２電極１２０が負バイアスされることでプラズマ中の電子に斥力が働いてプラズマは第２電極１２０側へ寄せられる。電流が急増するところでは第２電極１２０のシースの一部が第１電極１１０に達し、この部分は直流放電状態となって電流が増加するものと考えられる。高周波放電から直流放電状態へと移行する段階と考えられる。これより、安定した高周波放電が得られるのは、バイアス電流が急増しない範囲であることがわかった。また、プラズマ電位が零となる負バイアス電圧（－Ｖｂ＝３５０Ｖ）で成膜すると、基板１０には微粒子が堆積し、膜とはならなかった。
　（実施例４）
　実施例３において、基板１０として、金属膜を被覆していないガラスを用いた。ガラスは絶縁性であるため、直流バイアスの電流が流れにくくなった。この結果、基板１０として導電性基板を用いた場合、Ｖｂ＝－１００Ｖでバイアス電流が０．２９Ａであったのに対して、基板１０としてガラスを用いると同条件でバイアス電流が０．１１Ａに減少した。ここで流れた電流は、第１電極１１０のうち基板１０に被覆されていない領域に流れたものと考えられる。このため、本発明において、基板１０は成膜面が第１電極１１０と導通しているのが好ましいことがわかった。
（実施例５）
　微結晶シリコン薄膜太陽電池を対象に、イオン衝撃の低減による特性の向上について検証した。裏面電極としてのＡｇ膜をコーティングしたポリイミドフィルム状の基板１０に、ｎ型の微結晶シリコン層（約３０ｎｍ）、ｉ型の微結晶シリコン層（約２μｍ）、ｐ型の微結晶シリコン層（約３０ｎｍ）、ＩＴＯからなる透明電極膜、及びＡｇからなる櫛状の電極を順次形成した。各微結晶シリコン層はプラズマＣＶＤ法を用いて成膜した。製膜装置は図９に示す装置を３台連結した装置であり、微結晶シリコン層の各層をｎ層、ｉ層、ｐ層の順に堆積した。バイアス電圧はｉ型の微結晶シリコン層を成膜するときのみに印加した。原料ガスとしては、ｉ型の微結晶シリコン層を成膜するときにはＳｉＨ４及び水素ガスを使用し、ｎ型の微結晶シリコン層とｐ型の微結晶シリコン層を成膜するときには、ＳｉＨ４及び水素ガスに、それぞれホスフィンガスとジボランガスを添加した。裏面電極としてのＡｇ膜及びＩＴＯ透明電極膜はスパッタリング法で形成し、櫛状の電極は蒸着法で形成した。
　光電変換層であるｉ型微結晶シリコン層の成膜条件の詳細は、次の通りである。成膜装置としては、第５の実施形態に示した成膜装置を用いた。原料ガスの流量は、ＳｉＨ４を２０ｓｃｃｍ、水素を１７００ｓｃｃｍとした。成膜室１００の圧力は４ｔｏｒｒとして、基板温度を２００℃とした。また、高周波電源２１０の周波数及び電力を、それぞれ２７ＭＨｚ及び３００Ｗとした。第２電極１２０に重畳する直流バイアス電圧Ｖｂは、なし（フローティング電位:－３Ｖ）、－５０Ｖ、－１００Ｖ、－２００Ｖ、及び－３００Ｖとした。基板１０は第１電極１１０に接するとともに、基板１０の両端は成膜室１００にも接触していたため、基板１０はアース電位となっていた。
　図１３に、第２電極１２０の高周波電圧振幅Ｖop、プラズマ電位Ｖｐ、バイアス電流Ｉｂそれぞれの負の直流バイアス電圧－Ｖｂへの依存性を示す。これらの依存性は実施例３と同様であった。また、本実施例における成膜条件はすべてＶｐ>０であり、Ｖｂ＝－３５０ＶでＶｐ＝０Ｖとなると見積もられた。
　微結晶シリコン層の膜質の一つとして、シリコンの結晶化の程度をラマン分光により評価した。結晶化率を表すパラメータとして、ａ－Ｓｉピーク(４８０ｃｍ－１)の高さＩａと結晶Ｓｉピーク(５１０ｃｍ－１)の高さＩｃの比率Ｉｃ／Ｉａを用いた。
　また、作製した微結晶シリコン薄膜太陽電池の特性をソーラーシミュレータで測定した。このときの光の強度を１００ｍＷ／ｃｍ２として、光電変換効率を測定した。
　これらの測定結果および成膜速度を表１に示す。
Figure JPOXMLDOC01-appb-T000001
　図１４に、ＳｉＨ４流量が２０ｓｃｃｍの場合について光電変換効率の負の直流バイアス電圧－Ｖｂ依存性、及び光電変換光率のプラズマ電位Ｖｐ依存性を示す。負の直流バイアス－Ｖｂが大きくなるにつれて、光電変換効率が大きくなっていた。また、プラズマ電位が小さくなるにつれて光電変換効率が向上した。バイアス電圧Ｖｂを印加しないときの第１電極１１０に対する電位が第２電極１２０の電位（フローティング電位）よりも低くなるようにバイアス電圧Ｖｂを印加することで、光電変換効率が向上したことがわかる。プラズマ電位で言い換えると、バイアス電圧Ｖｂを印加しないときの第１電極１１０に対するプラズマ電位よりも低くなるようにバイアス電圧Ｖｂを印加することで、光電変換効率が向上したと言える。また、これはイオン衝撃の低減によって膜質が向上したためと考えられる。
　ただし、直流バイアス電圧を－３００Ｖまで下げると光電変換効率が低下した。これはプラズマ電位Ｖｐが零に近くなり、第２電極１２０のシースが部分的に第１電極１１０に達し、プラズマが不安定になったためと考えられる。バイアス電流が急増したことも、これを裏付けている。
　以上より、第２電極１２０にフローティング電位よりも低い直流バイアス電圧Ｖｂを印加することで、微結晶シリコン薄膜太陽電池の特性が改善することが分かった。特に、プラズマ電位Ｖｐが１００Ｖ以下で光電変換効率が最大をとることが分かる。
　また、第２電極１２０の電圧を低くしてプラズマ電位の電位が０に近づくと、微結晶シリコン薄膜太陽電池の特性が逆に悪くなることが分かった。これは、第２電極１２０のシースが部分的に第１電極１１０に達し、プラズマが不安定になったためと考えられる。このタイミングにおいて、第１電極１１０と第２電極１２０の間を流れる直流電流は急激に増加する。このため、成膜処理を行っているときのバイアス電圧を、プラズマ電位が特定の値より大きくなる値以下にするのが好ましいことが分かった。
　図１５に、成膜速度およびラマンピーク高さの比Ｉｃ／Ｉａの負の直流バイアス電圧依存性を示す。Ｉｃ／Ｉａは、負の直流バイアス電圧とともに大きくなる傾向があった。微結晶シリコン薄膜太陽電池は、アモルファスシリコンと結晶性シリコンの境界付近で特性がよいため、Ｉｃ／Ｉａは１より大きく、かつ１に近い方が好ましい。このため、ＳｉＨ４の流量を増やして結晶化率を下げることにより、成膜速度を向上させつつ太陽電池特性をさらに改善できることが予測される。これは、後述する実施例６において確認された。
　なお、成膜速度は直流バイアスとともに小さくなるが、その減少量は小さく、Ｖｂ＝－３００Ｖで１５％程度であった。このため、上記したように、ＳｉＨ４の流量を増やすことにより、結果として成膜速度を上昇できることが期待される。これは、後述する実施例６において確認された。
（実施例６）
　実施例５の実験において、ｉ型微結晶シリコン層の製膜条件の内、ＳｉＨ４ガス流量を変えて微結晶シリコン薄膜太陽電池を作製した。そして作製した試料に対して、実施例６と同様の測定を行った。これらの測定結果および成膜速度を表２に示す。
Figure JPOXMLDOC01-appb-T000002
　ＳｉＨ４の流量の増加にともなって、成膜速度が速くなり、かつＩｃ／Ｉａが小さくなる傾向があった。またＳｉＨ４の流量の増加に伴って光電変換効率も増加する傾向にある。またＩｃ／Ｉａを考慮してもバイアス電圧－Ｖｂとともに光電変換効率が向上することがわかる。
　この出願は、２００９年３月４日に出願された日本特許出願特願２００９－５０４５３を基礎とする優先権を主張し、その開示の全てをここに取り込む。
１０ 基板
１００ 成膜室
１１０ 第１電極
１２０ 第２電極
２１０ 高周波電源
２２０ 整合器
２３０　ハイパスフィルタ
３１０ 直流電源
３１２ 交流電源
３２０ 高周波数カットフィルタ
４１０ 電極電位測定部
４１２ 測定用配線
４１４ 電極電位測定部
４１６ 測定用配線
４２０ 制御部

Claims (35)

  1. 　成膜室内に配置された第１電極を接地し、
    　前記第１電極に基板を設置し、
    　前記成膜室内に配置されていて前記第１電極に対向している第２電極に、高周波電力及びバイアス電圧を供給してプラズマＣＶＤを行うことにより、前記基板に成膜処理を行い、
    　前記高周波電力及び前記バイアス電圧を供給したときの前記第２電極の平均電位を、前記高周波電力が供給されていて前記バイアス電圧が供給されていないときの前記第２電極の平均電位より低くする成膜方法。
  2. 　請求項１に記載の成膜方法において、
    　前記基板に成膜される膜が、太陽電池の光電変換層である成膜方法。
  3. 　請求項２に記載の成膜方法において、
    　前記光電変換層が結晶半導体又はアモルファス半導体である成膜方法。
  4. 　請求項１に記載の成膜方法において、
    　前記バイアス電圧は、直流電圧、又は平均電圧が０ではない交流電圧である成膜方法。
  5. 　請求項１に記載の成膜方法において、
    　前記バイアス電圧を制御することにより、前記第１電極に対する前記プラズマの電位であるプラズマ電位を、前記高周波電力が供給されていて前記バイアス電圧が供給されていないときの前記プラズマ電位より小さく、かつ０より大きくする成膜方法。
  6. 　請求項５に記載の成膜方法において、
    　前記第１電極に対する前記第２電極の平均電位をＶｄｃとして、前記第１電極に対する前記第２電極の電圧振幅をＶ０ｐとした場合、前記プラズマ電位を（Ｖｄｃ＋Ｖ０ｐ）／２とする成膜方法。
  7. 　請求項６に記載の成膜方法において、
    　前記バイアス電圧を制御することにより、前記プラズマ電位を１００Ｖ未満にする成膜方法。
  8. 　請求項６に記載の成膜方法において、
    　前記第２電極に、前記高周波電力の電力導入線とは別の測定用配線を接続し、前記測定用配線を用いて前記第２電極の平均電位Ｖｄｃ及び電圧振幅Ｖ０ｐを測定する成膜方法。
  9. 　請求項１に記載の成膜方法において、
    　前記バイアス電圧は、前記高周波電力の周波数成分を含む高周波電力を除去する高周波数カットフィルタを介して前記第２電極に供給される成膜方法。
  10. 　成膜室内に配置された第１電極に基板を設置し、
    　前記成膜室内に配置されていて前記第１電極に対向している第２電極に、高周波電力を供給してプラズマを発生させ、かつ前記第１電極又は前記第２電極にバイアス電圧を供給し、
    　前記第１電極に対する前記第２電極の平均電位をＶｄｃとして、前記第１電極に対する前記第２電極の電圧振幅をＶ０ｐとした場合、プラズマ電位を（Ｖｄｃ＋Ｖ０ｐ）／２として、前記バイアス電圧を前記プラズマ電位に基づいて制御してプラズマＣＶＤを行う成膜方法。
  11. 　請求項１０に記載の成膜方法において、
    　前記プラズマ電位を、前記高周波電力が供給されていて前記バイアス電圧が供給されていないときの前記プラズマ電位より小さくなるように前記バイアス電圧を制御してプラズマＣＶＤを行う成膜方法。
  12. 　請求項１１に記載の成膜方法において、
    　前記第１電極に対する前記プラズマの電位であるプラズマ電位が、０より大きくなるように前記バイアス電圧を制御してプラズマＣＶＤを行うことにより、前記基板に成膜処理を行う成膜方法。
  13. 　請求項１０に記載の成膜方法において、
    　前記プラズマ電位が１００Ｖ未満となるように前記バイアス電圧を制御してプラズマＣＶＤを行う成膜方法。
  14. 　請求項１０に記載の成膜方法において、
    　前記基板に成膜される膜が、太陽電池の光電変換層である成膜方法。
  15. 　請求項１４に記載の成膜方法において、
    　前記光電変換層が結晶半導体又はアモルファス半導体である成膜方法。
  16. 　請求項１０に記載の成膜方法において、
    　前記バイアス電圧は、直流電圧、又は平均電圧が０ではない交流電圧である成膜方法。
  17. 　請求項１６に記載の成膜方法において、
    　前記バイアス電圧は交流電圧であり、かつ周波数が前記高周波電力より小さい成膜方法。
  18. 　請求項１０に記載の成膜方法において、
    　前記バイアス電圧は前記第２電極に供給され、
    　前記第１電極は接地されている成膜方法。
  19. 　請求項１８に記載の成膜方法において、
    　前記第２電極に前記バイアス電圧を供給するバイアス電圧供給線に、前記高周波電力の周波数成分を含む高周波電力を除去する高周波数カットフィルタを設ける成膜方法。
  20. 　請求項１８に記載の成膜方法において、
    　前記第２電極に、前記高周波電力の電力導入線とは別の測定用配線を接続し、前記測定用配線を用いて前記第２電極の平均電位Ｖｄｃ及び電圧振幅Ｖ０ｐを測定する成膜方法。
  21. 　請求項１０に記載の成膜方法において、
    　前記バイアス電圧は前記第１電極に供給され、
    　前記第１電極は接地されていない成膜方法。
  22. 　請求項１又は１０に記載の成膜方法において、
    　前記バイアス電圧を制御して前記プラズマ電位を０に近づけていったとき、前記第１電極と前記第２電極の間を流れる直流電流は前記プラズマ電位が特定の値より低くなったときに急激に増加し、
    　前記成膜処理を行っているとき、前記プラズマ電位が前記特定の値より大きくなるように前記バイアス電位を制御する成膜方法。
  23. 　請求項１又は１０に記載の成膜方法において、
    　前記プラズマＣＶＤの材料ガスが、シリコン含有ガス、炭素含有ガス、ゲルマニウム含有ガスからなる群から選ばれた少なくとも一つを有する成膜方法。
  24. 　請求項２３に記載の成膜方法において、
    　前記材料ガスが、水素及び希ガスの少なくとも一つを含む希釈ガス、並びに不純物ガスを有する成膜方法。
  25. 　請求項１又は１０に記載の成膜方法において、
    　前記基板に成膜される膜が半導体膜である成膜方法。
  26. 　請求項２５に記載の成膜方法において、
    　前記半導体膜がシリコン、ゲルマニウム、又は炭素を含有する成膜方法。
  27. 　請求項１又は１０に記載の成膜方法において、
    　前記基板が可撓性を有する成膜方法。
  28. 　請求項２７に記載の成膜方法において、
    　前記基板を連続成膜する成膜方法。
  29. 　請求項２７に記載の成膜方法において、
    　前記基板は、ポリイミド、ポリアミド、ポリイミドアミド、ポリエチレンナフタレート、ポリエチレンテレフタレート、ポリエーテルイミド、ポリエーテルエーテルケトン、及びポリエーテルスルホン、からなる群から選ばれた少なくとも一つから形成されている成膜方法。
  30. 　請求項２７に記載の成膜方法において、
    　前記基板は、金属フィルムから形成されている成膜方法。
  31. 　請求項１又は１０に記載の成膜方法において、
    　前記基板が、絶縁性の基材と、前記基材の表面に形成された導電性膜とを有する成膜方法。　
  32. 　請求項１又は１０に記載の成膜方法において、
    　前記基板の成膜面は前記第１電極と導通している成膜方法。
  33. 　請求項１又は１０に記載の成膜方法において、
    　前記基板はガラス又は金属で形成されている成膜方法。
  34. 　請求項１又は１０に記載の成膜方法において、
    　前記高周波電力の周波数は１３ＭＨｚ以上である成膜方法。
  35. 　基板に成膜処理が行われる成膜室と、
    　前記成膜室内に配置されている第１電極と、
    　前記成膜室内に配置され、前記第１電極に対向している第２電極と、
    　前記第２電極に高周波電力を供給する高周波供給部と、
    　前記第２電極に接続され、前記高周波電力の電力導入線から独立していて前記第２電極の電位を測定するための測定用配線と、
    を備える成膜装置。
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Cited By (361)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140162462A1 (en) * 2012-07-20 2014-06-12 Applied Materials Inc. High frequency filter for improved rf bias signal stability
US20140256147A1 (en) * 2011-09-26 2014-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
WO2017039056A1 (ko) * 2015-08-31 2017-03-09 주식회사 뉴파워 프라즈마 흑연필라멘트 태양전지, 이를 제조하기 위한 직가열 방식의 플라즈마 처리 장치, 제조 시스템 및 이를 이용한 제조방법
KR101748251B1 (ko) * 2015-08-31 2017-07-12 주식회사 뉴파워 프라즈마 직가열 방식의 플라즈마 처리 장치
US10023960B2 (en) 2012-09-12 2018-07-17 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
KR20190012097A (ko) * 2017-07-26 2019-02-08 에이에스엠 아이피 홀딩 비.브이. 부바이어스를 사용하는 peald로 막을 증착하는 방법
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
US10249577B2 (en) 2016-05-17 2019-04-02 Asm Ip Holding B.V. Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10262859B2 (en) 2016-03-24 2019-04-16 Asm Ip Holding B.V. Process for forming a film on a substrate using multi-port injection assemblies
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10312129B2 (en) 2015-09-29 2019-06-04 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US10340125B2 (en) 2013-03-08 2019-07-02 Asm Ip Holding B.V. Pulsed remote plasma method and system
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US10361201B2 (en) 2013-09-27 2019-07-23 Asm Ip Holding B.V. Semiconductor structure and device formed using selective epitaxial process
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10366864B2 (en) 2013-03-08 2019-07-30 Asm Ip Holding B.V. Method and system for in-situ formation of intermediate reactive species
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US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
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US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10438965B2 (en) 2014-12-22 2019-10-08 Asm Ip Holding B.V. Semiconductor device and manufacturing method thereof
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
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US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
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US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
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US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US10561975B2 (en) 2014-10-07 2020-02-18 Asm Ip Holdings B.V. Variable conductance gas distribution apparatus and method
US10566223B2 (en) 2012-08-28 2020-02-18 Asm Ip Holdings B.V. Systems and methods for dynamic semiconductor process scheduling
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
JP2020045520A (ja) * 2018-09-19 2020-03-26 トヨタ自動車株式会社 プラズマｃｖｄ装置
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
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US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10622375B2 (en) 2016-11-07 2020-04-14 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
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US10665452B2 (en) 2016-05-02 2020-05-26 Asm Ip Holdings B.V. Source/drain performance through conformal solid state doping
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
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US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
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US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
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US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
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US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
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US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12043899B2 (en) 2017-01-10 2024-07-23 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
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US12622218B2 (en) 2020-07-22 2026-05-05 Asm Ip Holding B.V. Cassette lid opening device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9232626B2 (en) 2013-11-04 2016-01-05 Kla-Tencor Corporation Wafer grounding using localized plasma source
TWI575554B (zh) * 2014-05-14 2017-03-21 馗鼎奈米科技股份有限公司 電漿設備
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
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US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
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US12272520B2 (en) 2019-07-09 2025-04-08 Tokyo Electron Limited Process control enabled VDC sensor for plasma process
JP7726664B2 (ja) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基板を処理するための基板処理システム
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291150A (ja) * 1992-04-14 1993-11-05 Canon Inc プラズマｃｖｄ装置
JPH06280030A (ja) * 1993-03-29 1994-10-04 Ulvac Japan Ltd 薄膜作成装置
JPH0769790A (ja) * 1993-08-30 1995-03-14 Ulvac Japan Ltd 薄膜作製装置
JP2006144091A (ja) * 2004-11-22 2006-06-08 Fuji Electric Holdings Co Ltd プラズマ制御方法およびプラズマ制御装置
JP2007214176A (ja) * 2006-02-07 2007-08-23 Seiko Epson Corp 半導体装置の製造方法及びプラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142767A (ja) 1985-12-17 1987-06-26 Sharp Corp 電子写真感光体の製造方法
JPH02166283A (ja) 1988-12-19 1990-06-26 Fujitsu Ltd 絶縁膜の形成方法
US6375860B1 (en) * 1995-03-10 2002-04-23 General Atomics Controlled potential plasma source
US6563076B1 (en) * 1999-09-30 2003-05-13 Lam Research Corporation Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
WO2002097855A1 (en) * 2001-05-29 2002-12-05 Tokyo Electron Limited Plasma processing apparatus and method
JP2002371357A (ja) 2001-06-14 2002-12-26 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子並びにシリコン系薄膜の形成装置
JP4937041B2 (ja) 2007-08-27 2012-05-23 株式会社東芝 洗濯乾燥機用ドレインポンプ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291150A (ja) * 1992-04-14 1993-11-05 Canon Inc プラズマｃｖｄ装置
JPH06280030A (ja) * 1993-03-29 1994-10-04 Ulvac Japan Ltd 薄膜作成装置
JPH0769790A (ja) * 1993-08-30 1995-03-14 Ulvac Japan Ltd 薄膜作製装置
JP2006144091A (ja) * 2004-11-22 2006-06-08 Fuji Electric Holdings Co Ltd プラズマ制御方法およびプラズマ制御装置
JP2007214176A (ja) * 2006-02-07 2007-08-23 Seiko Epson Corp 半導体装置の製造方法及びプラズマ処理装置

Cited By (471)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10480072B2 (en) 2009-04-06 2019-11-19 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
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US9852922B2 (en) 2011-09-26 2017-12-26 Tokyo Electron Limited Plasma processing method
US20140256147A1 (en) * 2011-09-26 2014-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US9673069B2 (en) * 2012-07-20 2017-06-06 Applied Materials, Inc. High frequency filter for improved RF bias signal stability
US20140162462A1 (en) * 2012-07-20 2014-06-12 Applied Materials Inc. High frequency filter for improved rf bias signal stability
US10566223B2 (en) 2012-08-28 2020-02-18 Asm Ip Holdings B.V. Systems and methods for dynamic semiconductor process scheduling
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US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
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US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10950432B2 (en) 2017-04-25 2021-03-16 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10714335B2 (en) 2017-04-25 2020-07-14 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11976361B2 (en) 2017-06-28 2024-05-07 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US12363960B2 (en) 2017-07-19 2025-07-15 Asm Ip Holding B.V. Method for depositing a Group IV semiconductor and related semiconductor device structures
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
KR20190012097A (ko) * 2017-07-26 2019-02-08 에이에스엠 아이피 홀딩 비.브이. 부바이어스를 사용하는 peald로 막을 증착하는 방법
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
JP2019029652A (ja) * 2017-07-26 2019-02-21 エーエスエム アイピー ホールディング ビー．ブイ． 負バイアスを用いてｐｅａｌｄによって膜を堆積する方法
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
KR102691272B1 (ko) * 2017-07-26 2024-08-01 에이에스엠 아이피 홀딩 비.브이. 부바이어스를 사용하는 peald로 막을 증착하는 방법
JP7162456B2 (ja) 2017-07-26 2022-10-28 エーエスエム アイピー ホールディング ビー．ブイ． 負バイアスを用いてｐｅａｌｄによって膜を堆積する方法
US12276023B2 (en) 2017-08-04 2025-04-15 Asm Ip Holding B.V. Showerhead assembly for distributing a gas within a reaction chamber
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10672636B2 (en) 2017-08-09 2020-06-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11993843B2 (en) 2017-08-31 2024-05-28 Asm Ip Holding B.V. Substrate processing apparatus
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US12033861B2 (en) 2017-10-05 2024-07-09 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10734223B2 (en) 2017-10-10 2020-08-04 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US12040184B2 (en) 2017-10-30 2024-07-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11972944B2 (en) 2018-01-19 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US12119228B2 (en) 2018-01-19 2024-10-15 Asm Ip Holding B.V. Deposition method
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US12173402B2 (en) 2018-02-15 2024-12-24 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US12020938B2 (en) 2018-03-27 2024-06-25 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US12230531B2 (en) 2018-04-09 2025-02-18 Asm Ip Holding B.V. Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US12516413B2 (en) 2018-06-08 2026-01-06 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11296189B2 (en) 2018-06-21 2022-04-05 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US12601062B2 (en) 2018-08-06 2026-04-14 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
JP2020045520A (ja) * 2018-09-19 2020-03-26 トヨタ自動車株式会社 プラズマｃｖｄ装置
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US12448682B2 (en) 2018-11-06 2025-10-21 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11411088B2 (en) 2018-11-16 2022-08-09 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US12444599B2 (en) 2018-11-30 2025-10-14 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11959171B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US12176243B2 (en) 2019-02-20 2024-12-24 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US12410522B2 (en) 2019-02-22 2025-09-09 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US12195855B2 (en) 2019-06-06 2025-01-14 Asm Ip Holding B.V. Gas-phase reactor system including a gas detector
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US12252785B2 (en) 2019-06-10 2025-03-18 Asm Ip Holding B.V. Method for cleaning quartz epitaxial chambers
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US12107000B2 (en) 2019-07-10 2024-10-01 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
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US11996304B2 (en) 2019-07-16 2024-05-28 Asm Ip Holding B.V. Substrate processing device
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US12129548B2 (en) 2019-07-18 2024-10-29 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US12112940B2 (en) 2019-07-19 2024-10-08 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US12169361B2 (en) 2019-07-30 2024-12-17 Asm Ip Holding B.V. Substrate processing apparatus and method
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
US12247286B2 (en) 2019-08-09 2025-03-11 Asm Ip Holding B.V. Heater assembly including cooling apparatus and method of using same
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US12040229B2 (en) 2019-08-22 2024-07-16 Asm Ip Holding B.V. Method for forming a structure with a hole
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US12033849B2 (en) 2019-08-23 2024-07-09 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US12532674B2 (en) 2019-09-03 2026-01-20 Asm Ip Holding B.V. Methods and apparatus for depositing a chalcogenide film and structures including the film
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US12230497B2 (en) 2019-10-02 2025-02-18 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US12428726B2 (en) 2019-10-08 2025-09-30 Asm Ip Holding B.V. Gas injection system and reactor system including same
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US12266695B2 (en) 2019-11-05 2025-04-01 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US12119220B2 (en) 2019-12-19 2024-10-15 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US12125700B2 (en) 2020-01-16 2024-10-22 Asm Ip Holding B.V. Method of forming high aspect ratio features
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US12410515B2 (en) 2020-01-29 2025-09-09 Asm Ip Holding B.V. Contaminant trap system for a reactor system
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US12431334B2 (en) 2020-02-13 2025-09-30 Asm Ip Holding B.V. Gas distribution assembly
US12218269B2 (en) 2020-02-13 2025-02-04 Asm Ip Holding B.V. Substrate processing apparatus including light receiving device and calibration method of light receiving device
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US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US12278129B2 (en) 2020-03-04 2025-04-15 Asm Ip Holding B.V. Alignment fixture for a reactor system
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US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US12598928B2 (en) 2020-04-08 2026-04-07 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US12087586B2 (en) 2020-04-15 2024-09-10 Asm Ip Holding B.V. Method of forming chromium nitride layer and structure including the chromium nitride layer
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US12243742B2 (en) 2020-04-21 2025-03-04 Asm Ip Holding B.V. Method for processing a substrate
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US12130084B2 (en) 2020-04-24 2024-10-29 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US12243747B2 (en) 2020-04-24 2025-03-04 Asm Ip Holding B.V. Methods of forming structures including vanadium boride and vanadium phosphide layers
US12221357B2 (en) 2020-04-24 2025-02-11 Asm Ip Holding B.V. Methods and apparatus for stabilizing vanadium compounds
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11798830B2 (en) 2020-05-01 2023-10-24 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US12442082B2 (en) 2020-05-07 2025-10-14 Asm Ip Holding B.V. Reactor system comprising a tuning circuit
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US12057314B2 (en) 2020-05-15 2024-08-06 Asm Ip Holding B.V. Methods for silicon germanium uniformity control using multiple precursors
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US12243757B2 (en) 2020-05-21 2025-03-04 Asm Ip Holding B.V. Flange and apparatus for processing substrates
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US12406846B2 (en) 2020-05-26 2025-09-02 Asm Ip Holding B.V. Method for depositing boron and gallium containing silicon germanium layers
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US12106944B2 (en) 2020-06-02 2024-10-01 Asm Ip Holding B.V. Rotating substrate support
US12266524B2 (en) 2020-06-16 2025-04-01 Asm Ip Holding B.V. Method for depositing boron containing silicon germanium layers
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US12431354B2 (en) 2020-07-01 2025-09-30 Asm Ip Holding B.V. Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US12055863B2 (en) 2020-07-17 2024-08-06 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US12241158B2 (en) 2020-07-20 2025-03-04 Asm Ip Holding B.V. Method for forming structures including transition metal layers
US12622218B2 (en) 2020-07-22 2026-05-05 Asm Ip Holding B.V. Cassette lid opening device
CN111826714A (zh) * 2020-07-27 2020-10-27 哈尔滨工业大学 基于射频电源施加偏压以增强cvd金刚石异质外延形核的方法
US12322591B2 (en) 2020-07-27 2025-06-03 Asm Ip Holding B.V. Thin film deposition process
CN111826714B (zh) * 2020-07-27 2021-10-01 哈尔滨工业大学 基于射频电源施加偏压以增强cvd金刚石异质外延形核的方法
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US12154824B2 (en) 2020-08-14 2024-11-26 Asm Ip Holding B.V. Substrate processing method
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12217954B2 (en) 2020-08-25 2025-02-04 Asm Ip Holding B.V. Method of cleaning a surface
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US12074022B2 (en) 2020-08-27 2024-08-27 Asm Ip Holding B.V. Method and system for forming patterned structures using multiple patterning process
US12211742B2 (en) 2020-09-10 2025-01-28 Asm Ip Holding B.V. Methods for depositing gap filling fluid
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US12148609B2 (en) 2020-09-16 2024-11-19 Asm Ip Holding B.V. Silicon oxide deposition method
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12218000B2 (en) 2020-09-25 2025-02-04 Asm Ip Holding B.V. Semiconductor processing method
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12550644B2 (en) 2020-10-06 2026-02-10 Asm Ip Holding B.V. Method and system for forming silicon nitride on a sidewall of a feature
US12107005B2 (en) 2020-10-06 2024-10-01 Asm Ip Holding B.V. Deposition method and an apparatus for depositing a silicon-containing material
US12051567B2 (en) 2020-10-07 2024-07-30 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including gas supply unit
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US12217946B2 (en) 2020-10-15 2025-02-04 Asm Ip Holding B.V. Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US12209308B2 (en) 2020-11-12 2025-01-28 Asm Ip Holding B.V. Reactor and related methods
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US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US12564871B2 (en) 2020-12-02 2026-03-03 Asm Ip Holding B.V. Cleaning fixture for showerhead assemblies
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
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US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US12129545B2 (en) 2020-12-22 2024-10-29 Asm Ip Holding B.V. Precursor capsule, a vessel and a method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
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USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
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USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover

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