WO2010092928A1 - リニアイメージセンサ - Google Patents
リニアイメージセンサ Download PDFInfo
- Publication number
- WO2010092928A1 WO2010092928A1 PCT/JP2010/051802 JP2010051802W WO2010092928A1 WO 2010092928 A1 WO2010092928 A1 WO 2010092928A1 JP 2010051802 W JP2010051802 W JP 2010051802W WO 2010092928 A1 WO2010092928 A1 WO 2010092928A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor region
- light receiving
- concentration semiconductor
- type
- image sensor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 198
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 description 23
- 230000035945 sensitivity Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 206010047571 Visual impairment Diseases 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Abstract
Description
[第1の実施形態]
[第2の実施形態]
[第3の実施形態]
[第4の実施形態]
P(n),P1(n),P2(n),P3(n),P4(n),P5(n),Px(n) 受光部
PD(n),PD1(n),PD2(n),PD3(n),PD4(n),PD5(n),PDx(n) 埋め込み型フォトダイオード
10 p型基板(第1半導体領域)
20 n型低濃度半導体領域(第2半導体領域)
30 p型高濃度半導体領域(第3半導体領域)
40 n型高濃度半導体領域(第4半導体領域)
50 配線
60 遮光膜
70 シリコン酸化膜
T(n),T1(n),Tx(n) トランジスタ
DS n型高濃度半導体領域
G ゲート電極
Claims (5)
- 長尺形状の埋め込み型フォトダイオードが複数配列されたリニアイメージセンサにおいて、
前記埋め込み型フォトダイオード各々は、
第1導電型の第1半導体領域と、
前記第1半導体領域上に形成され、第2導電型の不純物濃度が低く、長尺形状である第2半導体領域と、
前記第2半導体領域の表面を覆うように、前記第2半導体領域上に形成された第1導電型の第3半導体領域と、
前記第2半導体領域から電荷を取り出すための第2導電型の第4半導体領域と、
を備え、
前記第4半導体領域は、前記第2半導体領域上において、長尺方向に複数離間して配置されている、
リニアイメージセンサ。 - 前記第4半導体領域は、前記第2半導体領域の前記長尺方向に延びる中心軸に沿って複数配置されている、
請求項1に記載のリニアイメージセンサ。 - 前記第4半導体領域は、前記第2半導体領域の前記長尺方向に延びる長辺に沿って複数配置されている、
請求項1に記載のリニアイメージセンサ。 - 前記第4半導体領域は、前記第2半導体領域の前記長尺方向に延びる両長辺に沿って、千鳥状に交互に複数配置されている、
請求項1に記載のリニアイメージセンサ。 - 前記第4半導体領域を被覆する遮光膜であって、配列方向に延びる当該遮光膜を備える、
請求項1~4の何れか1項に記載のリニアイメージセンサ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/148,514 US8907386B2 (en) | 2009-02-13 | 2010-02-08 | Linear image sensor |
EP10741205A EP2398052A4 (en) | 2009-02-13 | 2010-02-08 | LINEAR BLIND SENSOR |
CN201080007754.XA CN102318066B (zh) | 2009-02-13 | 2010-02-08 | 线性图像传感器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-031224 | 2009-02-13 | ||
JP2009031224A JP5271104B2 (ja) | 2009-02-13 | 2009-02-13 | リニアイメージセンサ |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010092928A1 true WO2010092928A1 (ja) | 2010-08-19 |
Family
ID=42561770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/051802 WO2010092928A1 (ja) | 2009-02-13 | 2010-02-08 | リニアイメージセンサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US8907386B2 (ja) |
EP (1) | EP2398052A4 (ja) |
JP (1) | JP5271104B2 (ja) |
KR (1) | KR101647525B1 (ja) |
CN (1) | CN102318066B (ja) |
WO (1) | WO2010092928A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011096549A1 (ja) * | 2010-02-05 | 2011-08-11 | 国立大学法人静岡大学 | 光情報取得素子、光情報取得素子アレイ及びハイブリッド型固体撮像装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5271104B2 (ja) | 2009-02-13 | 2013-08-21 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
JP5091886B2 (ja) * | 2009-02-13 | 2012-12-05 | 浜松ホトニクス株式会社 | イメージセンサ |
JP5659625B2 (ja) | 2010-08-24 | 2015-01-28 | 株式会社デンソー | ソレノイド装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6140056A (ja) | 1984-07-31 | 1986-02-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体リニアイメ−ジセンサ− |
JPH043473A (ja) * | 1990-04-20 | 1992-01-08 | Canon Inc | 光電変換装置 |
JPH11112006A (ja) * | 1997-10-06 | 1999-04-23 | Canon Inc | 光電変換装置と密着型イメージセンサ |
JPH11298033A (ja) * | 1998-03-09 | 1999-10-29 | Integration Assoc Inc | 分散型フォトダイオ―ド |
JP2002324908A (ja) * | 2001-03-15 | 2002-11-08 | Koninkl Philips Electronics Nv | 感光半導体コンポーネント |
JP2006080306A (ja) * | 2004-09-09 | 2006-03-23 | Hamamatsu Photonics Kk | ホトダイオードアレイおよび分光器 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3410016B2 (ja) | 1998-03-31 | 2003-05-26 | 株式会社東芝 | 増幅型固体撮像装置 |
KR100291179B1 (ko) * | 1998-06-29 | 2001-07-12 | 박종섭 | 자기정렬된실리사이드층을갖는씨모스이미지센서및그제조방법 |
JP4258875B2 (ja) | 1999-02-15 | 2009-04-30 | 株式会社ニコン | 光電変換素子及び光電変換装置 |
JP3554244B2 (ja) | 1999-02-25 | 2004-08-18 | キヤノン株式会社 | 光電変換装置及びそれを用いたイメージセンサ並びに画像入力システム |
JP4165785B2 (ja) | 1999-05-11 | 2008-10-15 | 横河電機株式会社 | フォトダイオードアレイ |
JP4109858B2 (ja) | 2001-11-13 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
TW516226B (en) * | 2001-12-07 | 2003-01-01 | Twinhan Technology Co Ltd | CMOS image sensor structure with increased fill factor |
JP4004484B2 (ja) * | 2004-03-31 | 2007-11-07 | シャープ株式会社 | 固体撮像素子の製造方法 |
JP2006041189A (ja) | 2004-07-27 | 2006-02-09 | Hamamatsu Photonics Kk | 固体撮像素子 |
CN100394609C (zh) | 2004-09-07 | 2008-06-11 | 三洋电机株式会社 | 固体摄像装置 |
JP2006093442A (ja) | 2004-09-24 | 2006-04-06 | Hamamatsu Photonics Kk | ホトダイオード、ホトダイオードアレイ、分光器およびホトダイオードの製造方法 |
JP4234116B2 (ja) * | 2005-06-27 | 2009-03-04 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
JP4956944B2 (ja) | 2005-09-12 | 2012-06-20 | 三菱電機株式会社 | アバランシェフォトダイオード |
WO2007055375A1 (ja) | 2005-11-14 | 2007-05-18 | Matsushita Electric Works, Ltd. | 空間情報検出装置および同装置に好適な光検出素子 |
KR100660336B1 (ko) | 2005-12-28 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 |
US7675097B2 (en) | 2006-12-01 | 2010-03-09 | International Business Machines Corporation | Silicide strapping in imager transfer gate device |
WO2008123597A2 (en) | 2007-03-30 | 2008-10-16 | Panasonic Electric Works Co., Ltd. | Ccd image pickup device with twofold frame storage portion and method for using the device |
JP5271104B2 (ja) | 2009-02-13 | 2013-08-21 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
JP5091886B2 (ja) * | 2009-02-13 | 2012-12-05 | 浜松ホトニクス株式会社 | イメージセンサ |
-
2009
- 2009-02-13 JP JP2009031224A patent/JP5271104B2/ja active Active
-
2010
- 2010-02-08 CN CN201080007754.XA patent/CN102318066B/zh not_active Expired - Fee Related
- 2010-02-08 US US13/148,514 patent/US8907386B2/en not_active Expired - Fee Related
- 2010-02-08 WO PCT/JP2010/051802 patent/WO2010092928A1/ja active Application Filing
- 2010-02-08 KR KR1020117010055A patent/KR101647525B1/ko active IP Right Grant
- 2010-02-08 EP EP10741205A patent/EP2398052A4/en not_active Ceased
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6140056A (ja) | 1984-07-31 | 1986-02-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体リニアイメ−ジセンサ− |
JPH043473A (ja) * | 1990-04-20 | 1992-01-08 | Canon Inc | 光電変換装置 |
JPH11112006A (ja) * | 1997-10-06 | 1999-04-23 | Canon Inc | 光電変換装置と密着型イメージセンサ |
JPH11298033A (ja) * | 1998-03-09 | 1999-10-29 | Integration Assoc Inc | 分散型フォトダイオ―ド |
JP2002324908A (ja) * | 2001-03-15 | 2002-11-08 | Koninkl Philips Electronics Nv | 感光半導体コンポーネント |
JP2006080306A (ja) * | 2004-09-09 | 2006-03-23 | Hamamatsu Photonics Kk | ホトダイオードアレイおよび分光器 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2398052A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011096549A1 (ja) * | 2010-02-05 | 2011-08-11 | 国立大学法人静岡大学 | 光情報取得素子、光情報取得素子アレイ及びハイブリッド型固体撮像装置 |
US8907388B2 (en) | 2010-02-05 | 2014-12-09 | National University Corporation Shizuoka University | Optical-information acquiring element, optical information acquiring element array, and hybrid solid-state imaging device |
JP5648964B2 (ja) * | 2010-02-05 | 2015-01-07 | 国立大学法人静岡大学 | 光情報取得素子、光情報取得素子アレイ及びハイブリッド型固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2398052A1 (en) | 2011-12-21 |
US8907386B2 (en) | 2014-12-09 |
EP2398052A4 (en) | 2012-09-26 |
KR20110118122A (ko) | 2011-10-28 |
CN102318066A (zh) | 2012-01-11 |
US20120018834A1 (en) | 2012-01-26 |
KR101647525B1 (ko) | 2016-08-10 |
CN102318066B (zh) | 2014-07-16 |
JP2010186935A (ja) | 2010-08-26 |
JP5271104B2 (ja) | 2013-08-21 |
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