WO2018054154A1 - 光电探测器及光电探测装置 - Google Patents

光电探测器及光电探测装置 Download PDF

Info

Publication number
WO2018054154A1
WO2018054154A1 PCT/CN2017/093832 CN2017093832W WO2018054154A1 WO 2018054154 A1 WO2018054154 A1 WO 2018054154A1 CN 2017093832 W CN2017093832 W CN 2017093832W WO 2018054154 A1 WO2018054154 A1 WO 2018054154A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
voltage
sub
photodetector
driving circuit
Prior art date
Application number
PCT/CN2017/093832
Other languages
English (en)
French (fr)
Inventor
马占洁
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/755,327 priority Critical patent/US10825946B2/en
Publication of WO2018054154A1 publication Critical patent/WO2018054154A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation

Definitions

  • the present disclosure relates to a photodetector and a photodetection device.
  • Metal-Semiconductor-Metal (MSM) type photodetectors utilize a Schottky barrier between the metal and semiconductor interfaces to form a carrier depletion region similar to a PN junction.
  • MSM Metal-Semiconductor-Metal
  • photo-generated carriers generated by incident light undergo a drifting motion into the carrier depletion region under the action of an applied electric field, and then the photo-generated carriers are quickly collected by the electrodes at both ends of the photodetector.
  • MSM structured photodetector has the characteristics of simple structure, small parasitic capacitance, fast response speed and low manufacturing process cost, it is widely used in various photon and particle detectors.
  • a horizontal electric field is generated under the applied voltage condition, thereby forming a channel for electron leakage, which causes a horizontal horizontal dark current to increase in a dark state, thereby causing a photocurrent and a dark current.
  • the contrast is reduced.
  • At least one embodiment of the present disclosure provides a photodetector comprising: a photo-sensing active layer including first and second surfaces opposite to each other; and a mutual spacing of the first surface of the photo-sensing active layer a first electrode and a second electrode disposed on a third electrode of the second surface of the photosensitive substrate; wherein the first electrode and the second electrode are respectively active with the light sense
  • the first surface of the layer is in direct contact; the third electrode is in direct contact with the second surface of the photo-active layer.
  • an orthographic projection of the third electrode on the photo-sensitive active layer covers at least a portion of the first electrode and/or a portion of the second electrode An orthographic projection on the photosensitive substrate.
  • an orthographic projection of the third electrode on the photo-sensitive active layer covers the first electrode and/or the second electrode in the All orthographic projections on the light-sensitive active layer.
  • the third electrode is completely Covering the second surface of the photo-active layer.
  • the first electrode and the second electrode are both slit-shaped electrodes, and the first electrode includes at least one first sub-electrode, the first The two electrodes include at least one second sub-electrode.
  • the first sub-electrode and the second sub-electrode are arranged in a one-to-one correspondence, and the first electrode and the second electrode form an intersecting finger shape. electrode.
  • the material of the third electrode is a highly reflective opaque metal material.
  • the opaque metal material includes at least one of aluminum, copper, and molybdenum.
  • the material of the first electrode is a transparent conductive material and/or the material of the second electrode is a transparent conductive material.
  • the transparent conductive material is a nano-thickness metal material having high transmittance.
  • At least one embodiment of the present disclosure further provides a photodetecting device comprising: any one of the above photodetectors; and the first electrode, the second electrode, and the third electrode in the photodetector, respectively An electrically connected voltage drive circuit; wherein the voltage drive circuit is configured to apply a different voltage to the first electrode and the second electrode.
  • the voltage driving circuit includes: a first sub-voltage driving circuit, a second sub-voltage driving circuit, and a third sub-voltage driving circuit; the first sub-voltage The driving circuit is electrically connected to the first electrode and configured to apply a voltage to the first electrode; the second sub-voltage driving circuit is electrically connected to the second electrode, and is configured to apply to the second electrode a voltage different from a voltage of the first voltage; the third sub voltage driving circuit is electrically connected to the third electrode and configured to apply a voltage to the third electrode.
  • the third sub voltage driving circuit is configured to apply a voltage with the first electrode and/or the second electrode to the third electrode. Voltages with different voltages.
  • a voltage difference between the third electrode and the first electrode and a voltage difference between the third electrode and the second electrode is greater than zero.
  • the third sub voltage driving circuit is configured to apply a voltage at the first electrode and a voltage of the second electrode to the third electrode. The voltage between them.
  • the third sub voltage driving circuit is configured to apply a voltage greater than or equal to the voltage of the first electrode and the second electrode to the third electrode. Larger voltage in the voltage.
  • the third sub voltage driving circuit is configured to apply a voltage less than or equal to the voltage of the first electrode and the second electrode to the third electrode. The smaller of the voltages.
  • FIG. 1 is a schematic cross-sectional view of a photodetector according to an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional structural view of a photodetector according to still another embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional view of a first electrode and a second electrode according to an embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram of a photodetecting device according to an embodiment of the present disclosure.
  • the photodetector includes: a photosensitive substrate 100, and the photosensitive substrate 100 includes a first surface opposite to each other ( 1) and a second surface (2), the first electrode 200 and the second electrode 300 disposed at a distance from each other of the first surface (1) of the photosensitive substrate 100, located on the second surface of the photosensitive substrate 100 a third electrode 400 of (2), wherein the first electrode 200 and the second electrode 300 are in direct contact with the first surface (1) of the photosensitive substrate 100, respectively, and the third electrode 400 and the photosensitive substrate 100
  • the second surface (2) is in direct contact.
  • first electrode 200 and the second electrode 300 are directly in contact with and electrically connected to the first surface (1) of the photosensitive active layer 100, and the third electrode 400 and the second surface of the photosensitive substrate 100 are respectively (2) Direct contact and electrical connection.
  • the photodetector provided in at least one embodiment of the present disclosure, by providing a third electrode on a side of the photosensitive active layer facing away from the first electrode and the second electrode (ie, the second surface), The electrode applies a voltage different from the voltage of the first electrode and/or the voltage of the second electrode such that an electric field is generated between the third electrode and at least one of the first electrode and the second electrode to make the total in the photodetector
  • the direction of the electric field changes from the original horizontal direction to other directions, thereby changing the channel of electron leakage, reducing the dark current caused by the horizontal electric field, and thus improving the photocurrent and dark current when the photodetector performs photodetection to generate photocurrent. Contrast.
  • the orthographic projection of the third electrode 400 on the photosensitive substrate 100 covers at least a portion of the first electrode 200 and/or the second electrode 300 at the photosensitive active layer. Orthographic projection on 100.
  • the orthographic projection of the third electrode 400 on the photosensitive active layer 100 covers at least the first electrode 200 and the second electrode 300 in the light sense. All orthographic projections on the active layer 100. It should be noted that the orthographic projection of the third electrode 400 on the photosensitive active layer 100 may also cover only all orthographic projections of the first electrode 200 on the photosensitive active layer 100, or only cover the second electrode 300 in the light. All orthographic projections on the active layer 100 are sensed.
  • the third electrode 400 completely covers the second surface (2) of the photosensitive substrate 100.
  • the material of the third electrode 400 may be a highly reflective opaque metal material.
  • the material of the third electrode 400 is a highly reflective opaque metal material, as shown in FIG. 1, when the incident light Q1 is incident on the photosensitive substrate, the second surface of the photosensitive substrate 100 is passed.
  • the third electrode 300 having high reflectivity part of the light transmitted through the photosensitive substrate 100 can be reflected, that is, the reflected light Q2, and the photosensitive substrate 100 can sufficiently absorb the incident light Q1. Thereby, it is possible to reduce the thickness of the light-sensitive active layer while improving the utilization of light.
  • the opaque metal material may include at least one of aluminum, copper, and molybdenum, which is not limited herein.
  • first sub-electrode and the second sub-electrode are arranged in a one-to-one correspondence, such that the first electrode 200 and the second electrode 300 form an interdigitated electrode.
  • the material of the first electrode is a transparent conductive material; or, the photoelectric provided in the embodiment of the present disclosure
  • the material of the second electrode is a transparent conductive material; or, in order to further improve the absorption of light by the light-sensitive active layer, in the above-mentioned photodetector provided by the embodiment of the present disclosure, as shown in FIG.
  • the material of the first electrode 200 is a transparent conductive material
  • the material of the second electrode 300 is a transparent conductive material.
  • the transparent conductive material may be a metal material having high transmittance, such as nano-thickness gold, nano-thickness silver, or the like, for example, 10 to 500 nm, for example, 10 nm, 100 nm, 200 nm, 300 nm, 400 nm or 500 nm, and the like.
  • an embodiment of the present disclosure further provides a photodetecting device, as shown in FIG. 4, the photodetecting device includes: any one of the above photodetectors and the first electrode 200 and the second electrode in the photodetector respectively 300 and a voltage driving circuit 500 electrically connected to the third electrode 400.
  • the voltage driving circuit 500 may include a voltage dividing circuit or a gamma circuit or the like.
  • the voltage driving circuit 500 is configured to apply different voltages to the first electrode 200 and the second electrode 300.
  • the voltage driving circuit 500 is further configured to apply a voltage V3 different from the voltage V1 of the first electrode 200 and/or the voltage V3 of the second electrode 300 to the third electrode 400.
  • the voltage driving circuit may include: a first sub voltage driving circuit, a second sub voltage driving circuit, and a third sub voltage driving circuit.
  • the first sub-voltage driving circuit is electrically connected to the first electrode and configured to apply a voltage to the first electrode;
  • the second sub-voltage driving circuit is electrically connected to the second electrode, and is configured to apply the first voltage to the second electrode.
  • the voltage of the voltage is different;
  • the third sub voltage driving circuit is electrically connected to the third electrode and configured to apply a voltage to the third electrode.
  • the third sub-voltage driving circuit is configured to apply a voltage different from the voltage of the first electrode and/or the voltage of the second electrode to the third electrode.
  • the difference between the voltage difference between the third electrode and the first electrode and the voltage difference between the third electrode and the second electrode is greater than zero.
  • the third sub voltage driving circuit is configured to apply a voltage between the voltage of the first electrode and the voltage of the second electrode to the third electrode.
  • the third sub voltage driving circuit is configured to apply a voltage greater than or equal to a voltage of the first electrode and a voltage of the second electrode to the third electrode.
  • the third sub voltage driving circuit is configured to apply a voltage smaller than or equal to a voltage of the first electrode and a voltage of the second electrode to the third electrode.
  • V2>V1 When V2>V1, then V2>V3>V1; or, V3 ⁇ V2; or, V3 ⁇ V1.
  • one direction of the plane where the photosensitive substrate 100 is located is a horizontal direction X, perpendicular to the photosensitive active layer.
  • the direction of the plane is the vertical direction Y.
  • V1>V3>V2 the horizontal electric field E1 directed from the first electrode 200 to the second electrode 300 between the first electrode 200 and the second electrode 300
  • the first electrode 200 and The third electrode 400 has a vertical electric field E2 directed from the first electrode 200 toward the third electrode 400, and a vertical electric field E3 between the second electrode 300 and the third electrode 400 directed from the third electrode 400 to the second electrode 300. Therefore, the directions of E1, E2, and E3 are all different.
  • an electric field is generated between the third electrode and at least one of the first electrode and the second electrode to make the total in the photodetector
  • the direction of the electric field changes from the original horizontal direction to the other direction, thereby changing the channel of electron leakage.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

一种光电探测器及光电探测装置，该光电探测器包括：光感有源层(100)，该光感有源层(100)包括彼此相对的第一表面(1)和第二表面(2)，位于所述光感有源层(100)的第一表面(1)的相互间隔设置的第一电极(200)和第二电极(300)，位于所述光感有源层(100)的第二表面(2)的第三电极(400)；其中，所述第一电极(200)和所述第二电极(300)分别与所述光感有源层(100)的所述第一表面(1)直接接触；所述第三电极(400)与所述光感有源层(100)的所述第二表面(2)直接接触。该光电探测器可以提高光电流与暗电流的对比度。

Description

光电探测器及光电探测装置 技术领域
本公开涉及一种光电探测器及光电探测装置。
背景技术
金属-半导体-金属(Metal-Semiconductor-Metal，MSM)型光电探测器利用金属与半导体界面之间的肖特基势垒形成类似PN结的载流子耗尽区。在半导体中，由入射光产生的光生载流子在外加电场的作用下向载流子耗尽区内发生漂移运动，然后该光生载流子迅速被光电探测器两端的电极收集。由于MSM结构光探测器具有结构简单、寄生电容小、响应速度快、制作工艺成本低等特点被广泛应用于各类光子和粒子探测器中。
在目前的MSM结构的光电探测器中，在外加电压的条件下会产生水平电场，从而形成电子泄漏的通道，这样会导致暗态时水平横向暗电流增大，从而导致光电流与暗电流的对比度降低。
发明内容
本公开至少一实施例提供一种光电探测器，包括：光感有源层，包括彼此相对的第一表面和第二表面；位于所述光感有源层的所述第一表面的相互间隔设置的第一电极和第二电极，位于所述光感有源层的所述第二表面的第三电极；其中，所述第一电极和所述第二电极分别与所述光感有源层的所述第一表面直接接触；所述第三电极与所述光感有源层的所述第二表面直接接触。
例如，在本公开至少一实施例提供的光电探测器中，所述第三电极在所述光感有源层上的正投影至少覆盖部分所述第一电极和/或部分所述第二电极在所述光感有源层上的正投影。
例如，在本公开至少一实施例提供的光电探测器中，所述第三电极在所述光感有源层上的正投影覆盖所述第一电极和/或所述第二电极在所述光感有源层上的全部正投影。
例如，在本公开至少一实施例提供的光电探测器中，所述第三电极完全 覆盖所述光感有源层的所述第二表面。
例如，在本公开至少一实施例提供的光电探测器中，所述第一电极与所述第二电极均为狭缝状电极，所述第一电极包括至少一个第一子电极，所述第二电极包括至少一个第二子电极。
例如，在本公开至少一实施例提供的光电探测器中，所述第一子电极和所述第二子电极一一对应交叉设置，所述第一电极与所述第二电极组成交叉指形电极。
例如，在本公开至少一实施例提供的光电探测器中，所述第三电极的材料为高反射性的不透明金属材料。
例如，在本公开至少一实施例提供的光电探测器中，所述不透明金属材料包括：铝、铜和钼中的至少之一。
例如，在本公开至少一实施例提供的光电探测器中，所述第一电极的材料为透明导电材料和/或所述第二电极的材料为透明导电材料。
例如，在本公开至少一实施例提供的光电探测器中，所述透明导电材料为具有高透过率的纳米厚度的金属材料。
本公开至少一实施例还提供一种光电探测装置，包括：上述任一光电探测器；以及分别与所述光电探测器中的所述第一电极、所述第二电极以及所述第三电极电性连接的电压驱动电路；其中，所述电压驱动电路配置为对所述第一电极和所述第二电极施加不同的电压。
例如，在本公开至少一实施例提供的光电探测装置中，所述电压驱动电路包括：第一子电压驱动电路、第二子电压驱动电路以及第三子电压驱动电路；所述第一子电压驱动电路与所述第一电极电性连接，配置为对所述第一电极施加电压；所述第二子电压驱动电路与所述第二电极电性连接，配置为对所述第二电极施加与所述第一电压的电压不同的电压；所述第三子电压驱动电路与所述第三电极电性连接，配置为对所述第三电极施加电压。
例如，在本公开至少一实施例提供的光电探测装置中，所述第三子电压驱动电路配置为对所述第三电极施加与所述第一电极的电压和/或所述第二电极的电压不同的电压。
例如，在本公开至少一实施例提供的光电探测装置中，所述第三电极和所述第一电极之间的电压差与所述第三电极和所述第二电极之间的电压差的差值大于零。
例如，在本公开至少一实施例提供的光电探测装置中，所述第三子电压驱动电路配置为对所述第三电极施加位于所述第一电极的电压和所述第二电极的电压之间的电压。
例如，在本公开至少一实施例提供的光电探测装置中，所述第三子电压驱动电路配置为对所述第三电极施加大于或等于所述第一电极的电压和所述第二电极的电压中较大的电压。
例如，在本公开至少一实施例提供的光电探测装置中，所述第三子电压驱动电路配置为对所述第三电极施加小于或等于所述第一电极的电压和所述第二电极的电压中较小的电压。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本公开一实施例提供的一种光电探测器的截面结构示意图；
图2为本公开再一实施例提供的一种光电探测器的截面结构示意图；
图3为本公开一实施例提供的第一电极和第二电极的截面结构示意图；以及
图4为本公开一实施例提供的一种光电探测装置的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不 排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
需要说明的是，附图中各层薄膜厚度、大小和形状均不反映光电探测器的真实比例，只是示意说明本公开的内容。
本公开至少一个实施例提供了一种光电探测器，如图1和图2所示，该光电探测器包括：光感有源层100、光感有源层100包括彼此相对的第一表面(1)和第二表面(2)，位于光感有源层100的第一表面(1)的相互间隔设置的第一电极200和第二电极300，位于光感有源层100的第二表面(2)的第三电极400，其中，第一电极200和第二电极300分别与光感有源层100的第一表面(1)直接接触，第三电极400与光感有源层100的第二表面(2)直接接触。
需要说明的是，第一电极200和第二电极300分别与光感有源层100的第一表面(1)直接接触且电连接，第三电极400与光感有源层100的第二表面(2)直接接触且电连接。
例如，在本公开至少一实施例提供的光电探测器中，通过在光感有源层背离第一电极和第二电极的一侧(即第二表面)设置第三电极，可以通过对第三电极施加与第一电极的电压和/或第二电极的电压不同的电压，使第三电极与第一电极和第二电极中的至少一个电极之间产生电场，以使光电探测器中的总电场方向由原来的水平方向变化为其它方向，从而改变了电子泄漏的通道，减小了水平电场导致的暗电流，进而当光电探测器进行光探测产生光电流时，可以提高光电流与暗电流的对比度。
例如，在本公开的实施例提供的光电探测器中，第三电极400在光感有源层100上的正投影至少覆盖部分第一电极200和/或第二电极300在光感有源层100上的正投影。
例如，在本公开的实施例提供的光电探测器中，如图2所示，第三电极400在光感有源层100上的正投影至少覆盖第一电极200和第二电极300在光感有源层100上的全部正投影。需要说明的是，第三电极400在光感有源层100上的正投影也可以只覆盖第一电极200在光感有源层100上的全部正投影，或者只覆盖第二电极300在光感有源层100上的全部正投影。
例如，在本公开的实施例提供的上述光电探测器中，如图1所示，第三电极400完全覆盖光感有源层100的第二表面(2)。
例如，光感有源层的材料为硫化镉、硒化镉或者硫化铅等。
一般入射光进入到光感有源层中会产生光生载流子，随着光在光感有源层中不断的向深处传播，光强会逐渐变弱。目前，为了使光感有源层充分吸收光，需要将光感有源层的膜层制作的较厚，这样可以使来自外部的光均被光感有源层吸收。但是，随着光感有源层厚度的增加，光感有源层中的光生载流子在垂直于光感有源层的方向上的浓度梯度变化明显，这样不利于提高光的利用率。因此，为了降低光感有源层的厚度，在本公开的实施例提供的上述光电探测器中，第三电极400的材料可以为高反射性的不透明金属材料。
例如，当第三电极400的材料为高反射性的不透明金属材料时，如图1所示，当入射光Q1入射到光感有源层时，通过在光感有源层100的第二表面(2)设置具有高反射性的第三电极300，可以将透过光感有源层100的部分光进行反射，即反射光Q2，使光感有源层100将入射光Q1充分地吸收，从而可以实现减小光感有源层的厚度的同时提高光的利用率。
例如，在本公开的实施例提供的上述光电探测器中，不透明金属材料可以包括：铝、铜和钼中的至少之一，在此不作限定。
为了提高光感有源层与光的直接接触面积，增加光感有源层对光的吸收，例如，在本公开的实施例提供的上述光电探测器中，如图3所示，第一电极200与第二电极300均为狭缝状电极，第一电极200包括至少一个第一子电极，第二电极300包括至少一个第二子电极。
例如，该第一子电极和该第二子电极一一对应交叉设置，使得第一电极200与第二电极300组成交叉指形电极。
例如，为了进一步提高光感有源层对光的吸收，在本公开至少一实施例提供的上述光电探测器中，第一电极的材料为透明导电材料；或者，在本公开实施例提供的光电探测器中，第二电极的材料为透明导电材料；再或者，为了进一步提高光感有源层对光的吸收，在本公开的实施例提供的上述光电探测器中，如图1所示，第一电极200的材料为透明导电材料，且第二电极300的材料为透明导电材料。这样入射光Q1可以透过第一电极200和第二电极300进入光感有源层100中，从而可以进一步提高光感有源层100对光的吸收。
例如，在本公开的实施例提供的上述光电探测器中，透明导电材料可以为具有高透过率的金属材料，例如纳米厚度的金、纳米厚度的银等，例如，10～500nm,例如，10nm、100nm、200nm、300nm、400nm或者500nm等。
例如，该透明导电材料也可以为氧化铟锡(ITO)材料、氧化铟锌(IZO)材料、碳纳米管和石墨烯中的之一或者任意组合，在此不作限定。
例如，本公开的实施例还提供一种光电探测装置，如图4所示，该光电探测装置包括：上述任一种光电探测器以及分别与光电探测器中的第一电极200、第二电极300以及第三电极400电性连接的电压驱动电路500。例如，电压驱动电路500可以包括分压电路或伽马电路等。
例如，电压驱动电路500配置为对第一电极200和第二电极300施加不同的电压。
例如，电压驱动电路500还配置为对第三电极400施加与第一电极200的电压V1和/或第二电极300的电压V3不同的电压V3。
例如，第三电极400的电压V3和第一电极200的电压V1的电压差与第三电极400的电压V3和第二电极300的电压V2的电压差之间的差值大于零。
例如，在本公开的实施例提供的光电探测装置中，电压驱动电路可以包括：第一子电压驱动电路、第二子电压驱动电路以及第三子电压驱动电路。
例如，第一子电压驱动电路与第一电极电性连接，配置为对第一电极施加电压；第二子电压驱动电路与第二电极电性连接，配置为对第二电极施加与第一电压的电压不同的电压；第三子电压驱动电路与第三电极电性连接，配置为对第三电极施加电压。
例如，第三子电压驱动电路配置为对第三电极施加与第一电极的电压和/或第二电极的电压不同的电压。
例如，第三电极和第一电极之间的电压差与第三电极和第二电极之间的电压差的差值大于零。
例如，第三子电压驱动电路配置为对第三电极施加位于第一电极的电压和第二电极的电压之间的电压。
例如，第三子电压驱动电路配置为对第三电极施加大于或等于第一电极的电压和第二电极的电压中较大的电压。
例如，第三子电压驱动电路配置为对第三电极施加小于或等于第一电极的电压和第二电极的电压中较小的电压。
例如，在一个示例中，第一电极被加载的电压为V1，第二电极被加载的电压为V2，第三电极被加载的电压为V3，当V1>V2时，则V1>V3>V2；或者，V3≥V1；或者，V3≤V2。
当V2>V1时，则V2>V3>V1；或者，V3≥V2；或者，V3≤V1。
例如，在一个示例中，在本公开的实施例提供的光电探测装置中，如图4所示，光感有源层100所在的平面的一个方向为水平方向X，垂直于光感有源层所在平面的方向为垂直方向Y，以V1>V3>V2为例，第一电极200与第二电极300之间具有由第一电极200指向第二电极300的水平电场E1，第一电极200与第三电极400之间具有由第一电极200指向第三电极400方向的垂直电场E2，第二电极300与第三电极400之间具有由第三电极400指向第二电极300方向的垂直电场E3，因此E1、E2、E3的方向均不同。并且由于V1和V3的电压差与V2和V3的电压差之间的差值大于零，因此E2和E3的大小也不同。因此E1、E2、E3进行叠加后的总电场方向与E1方向不同，从而使原来仅沿水平电场E1运动的电子，变化为沿E1、E2、E3进行叠加后的总电场方向上运动，因此可以降低从第一电极200流向第二电极300的电子，从而可以降低第一电极200与第二电极300之间的暗电流，进而在光电探测装置进行光探测时，可以提高光电流和暗电流的对比度。
本公开的实施例提供的光电探测器及光电探测装置，具有以下至少一项
有益效果：
(1)在本公开至少一实施例提供的光电探测器及光电探测装置中，第三电极与第一电极和第二电极中的至少之一之间产生电场，以使光电探测器中的总电场方向由原来的水平方向变化为其它方向，从而改变电子泄漏的通道。
(2)本公开至少一实施例提供的光电探测器及光电探测装置，可以降低水平电场导致的暗电流。
(3)在本公开至少一实施例提供的光电探测器及光电探测装置中，当光电探测器进行光探测产生光电流时，可以提高光电流与暗电流的对比度。
有以下几点需要说明：
(1)本发明实施例附图只涉及到与本发明实施例涉及到的结构，其他 结构可参考通常设计。
(2)为了清晰起见，在用于描述本发明的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本发明的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，本发明的保护范围应以所述权利要求的保护范围为准。
本申请要求于2016年9月26日递交的中国专利申请第201610851904.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (17)

  1. 一种光电探测器，包括：
    光感有源层，包括彼此相对的第一表面和第二表面；
    位于所述光感有源层的所述第一表面的相互间隔设置的第一电极和第二电极，
    位于所述光感有源层的所述第二表面的第三电极；其中，
    所述第一电极和所述第二电极分别与所述光感有源层的所述第一表面直接接触；
    所述第三电极与所述光感有源层的所述第二表面直接接触。
  2. 如权利要求1所述的光电探测器，其中，所述第三电极在所述光感有源层上的正投影至少覆盖部分所述第一电极和/或部分所述第二电极在所述光感有源层上的正投影。
  3. 如权利要求2所述的光电探测器，其中，所述第三电极在所述光感有源层上的正投影覆盖所述第一电极和/或所述第二电极在所述光感有源层上的全部正投影。
  4. 如权利要求1-3中任一项所述的光电探测器，其中，所述第三电极完全覆盖所述光感有源层的所述第二表面。
  5. 如权利要求1-4中任一项所述的光电探测器，其中，所述第一电极与所述第二电极均为狭缝状电极，所述第一电极包括至少一个第一子电极，所述第二电极包括至少一个第二子电极。
  6. 如权利要求5所述的光电探测器，其中，所述第一子电极和所述第二子电极一一对应交叉设置，所述第一电极与所述第二电极组成交叉指形电极。
  7. 如权利要求1-6中任一项所述的光电探测器，其中，所述第三电极的材料为高反射性的不透明金属材料。
  8. 如权利要求8所述的光电探测器，其中，所述不透明金属材料包括：铝、铜和钼中的至少之一。
  9. 如权利要求1-6中任一项所述的光电探测器，其中，所述第一电极的材料为透明导电材料和/或所述第二电极的材料为透明导电材料。
  10. 如权利要求9所述的光电探测器，其中，所述透明导电材料为具有 高透过率的纳米厚度的金属材料。
  11. 一种光电探测装置，包括：
    如权利要求1-10中任一项所述的光电探测器；以及
    分别与所述光电探测器中的所述第一电极、所述第二电极以及所述第三电极电性连接的电压驱动电路；其中，
    所述电压驱动电路配置为对所述第一电极和所述第二电极施加不同的电压。
  12. 如权利要求11所述的光电探测装置，其中，所述电压驱动电路包括：第一子电压驱动电路、第二子电压驱动电路以及第三子电压驱动电路；
    所述第一子电压驱动电路与所述第一电极电性连接，配置为对所述第一电极施加电压；
    所述第二子电压驱动电路与所述第二电极电性连接，配置为对所述第二电极施加与所述第一电压的电压不同的电压；
    所述第三子电压驱动电路与所述第三电极电性连接，配置为对所述第三电极施加电压。
  13. 如权利要求12所述的光电探测装置，其中，所述第三子电压驱动电路配置为对所述第三电极施加与所述第一电极的电压和/或所述第二电极的电压不同的电压。
  14. 如权利要求13所述的光电探测装置，其中，所述第三电极和所述第一电极之间的电压差与所述第三电极和所述第二电极之间的电压差的差值大于零。
  15. 如权利要求13所述的光电探测装置，其中，所述第三子电压驱动电路配置为对所述第三电极施加位于所述第一电极的电压和所述第二电极的电压之间的电压。
  16. 如权利要求13所述的光电探测装置，其中，所述第三子电压驱动电路配置为对所述第三电极施加大于或等于所述第一电极的电压和所述第二电极的电压中较大的电压。
  17. 如权利要求13所述的光电探测装置，其中，所述第三子电压驱动电路配置为对所述第三电极施加小于或等于所述第一电极的电压和所述第二电极的电压中较小的电压。
PCT/CN2017/093832 2016-09-26 2017-07-21 光电探测器及光电探测装置 WO2018054154A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/755,327 US10825946B2 (en) 2016-09-26 2017-07-21 Photoelectric detector and photoelectric detection device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610851904.4A CN106252454B (zh) 2016-09-26 2016-09-26 一种光电探测器及光电探测装置
CN201610851904.4 2016-09-26

Publications (1)

Publication Number Publication Date
WO2018054154A1 true WO2018054154A1 (zh) 2018-03-29

Family

ID=57611693

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/093832 WO2018054154A1 (zh) 2016-09-26 2017-07-21 光电探测器及光电探测装置

Country Status (3)

Country Link
US (1) US10825946B2 (zh)
CN (1) CN106252454B (zh)
WO (1) WO2018054154A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106252454B (zh) 2016-09-26 2017-08-25 京东方科技集团股份有限公司 一种光电探测器及光电探测装置
CN106783904B (zh) * 2017-01-03 2019-07-05 京东方科技集团股份有限公司 光电检测器件和光电检测装置
CN110867151B (zh) * 2019-11-29 2022-07-05 合肥维信诺科技有限公司 显示母板、显示面板及电子泄漏的测试方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881728A (zh) * 2012-09-27 2013-01-16 中国科学院苏州纳米技术与纳米仿生研究所 基于超颖材料结构的薄膜太阳能电池及其制备方法
US20140063583A1 (en) * 2012-09-06 2014-03-06 Samsung Electronics Co., Ltd. Infrared transmission large-area shutter
CN103811568A (zh) * 2014-02-21 2014-05-21 中国科学院半导体研究所 一种基于一维光栅的表面入射石墨烯光电探测器
CN105633283A (zh) * 2016-03-14 2016-06-01 深圳大学 一种透明、柔性的光电传感器及其制备方法
CN106252454A (zh) * 2016-09-26 2016-12-21 京东方科技集团股份有限公司 一种光电探测器及光电探测装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687871B2 (en) * 2006-03-19 2010-03-30 Shimon Maimon Reduced dark current photodetector
CN101388417B (zh) * 2007-09-14 2011-06-08 鸿富锦精密工业（深圳）有限公司 太阳能电池组件
CN101286535A (zh) * 2008-06-04 2008-10-15 长春理工大学 pn结MgxZn1－xO薄膜日盲区紫外探测器件
US8836069B2 (en) 2009-04-23 2014-09-16 Karim S. Karim Method and apparatus for a lateral radiation detector
US8618625B2 (en) 2010-03-10 2013-12-31 Cisco Technology, Inc. Silicon-based schottky barrier detector with improved responsivity
CN206116433U (zh) * 2016-09-26 2017-04-19 京东方科技集团股份有限公司 一种光电探测器及光电探测装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140063583A1 (en) * 2012-09-06 2014-03-06 Samsung Electronics Co., Ltd. Infrared transmission large-area shutter
CN102881728A (zh) * 2012-09-27 2013-01-16 中国科学院苏州纳米技术与纳米仿生研究所 基于超颖材料结构的薄膜太阳能电池及其制备方法
CN103811568A (zh) * 2014-02-21 2014-05-21 中国科学院半导体研究所 一种基于一维光栅的表面入射石墨烯光电探测器
CN105633283A (zh) * 2016-03-14 2016-06-01 深圳大学 一种透明、柔性的光电传感器及其制备方法
CN106252454A (zh) * 2016-09-26 2016-12-21 京东方科技集团股份有限公司 一种光电探测器及光电探测装置

Also Published As

Publication number Publication date
US20200013916A1 (en) 2020-01-09
CN106252454B (zh) 2017-08-25
CN106252454A (zh) 2016-12-21
US10825946B2 (en) 2020-11-03

Similar Documents

Publication Publication Date Title
US11101304B2 (en) Diode and fabrication method thereof, array substrate and display panel
KR102523974B1 (ko) 전하 배리어층을 포함한 광전 소자
TWI461896B (zh) 具光電轉換之觸控面板
KR102561102B1 (ko) 2차원 절연체를 포함하는 근적외선 센서
EP2490264A1 (en) Photoelectric conversion device and electronic apparatus
CN112055893A (zh) 显示面板及其制作方法
KR20120075971A (ko) 적층형 포토다이오드 및 그 제조방법
JP2020512678A (ja) 半導体デバイス、アレイ基板及び半導体デバイスの製造方法
WO2018054154A1 (zh) 光电探测器及光电探测装置
KR20150072888A (ko) 양자점 감응형 산화물 광감지 트랜지스터와 그 제조방법
JPH04395B2 (zh)
KR20190059667A (ko) 아발란치 광검출기 및 이를 포함하는 이미지 센서
TWI731811B (zh) 半導體光檢測元件
US20180026072A1 (en) Active matrix image sensing device
JP2010251496A (ja) イメージセンサー
KR20130070892A (ko) 광 검출기 소자
US20210226079A1 (en) Pin device and manufacturing method thereof, photosensitive device and display device
US20130146119A1 (en) Solar cell system
WO2010032632A1 (ja) 光検出素子、光検出装置、及び、光検出機能付き表示装置
CN113454795A (zh) 用于显示器下指纹和手势传感器的具有半导体活性层的光检测器
US11189740B2 (en) Photoelectric sensor and manufacturing method thereof
JP5330877B2 (ja) 光検出装置及び表示装置
CN111512445B (zh) 图像传感器
CN112928137A (zh) 有机光电平板探测器
CN111341853B (zh) 一种光电探测器、制备方法及光电探测装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17852224

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 12.07.2019)

122 Ep: pct application non-entry in european phase

Ref document number: 17852224

Country of ref document: EP

Kind code of ref document: A1