WO2010067974A3 - 복수기판 처리장치 - Google Patents

복수기판 처리장치 Download PDF

Info

Publication number
WO2010067974A3
WO2010067974A3 PCT/KR2009/007004 KR2009007004W WO2010067974A3 WO 2010067974 A3 WO2010067974 A3 WO 2010067974A3 KR 2009007004 W KR2009007004 W KR 2009007004W WO 2010067974 A3 WO2010067974 A3 WO 2010067974A3
Authority
WO
WIPO (PCT)
Prior art keywords
material gas
substrates
substrate support
treating multiple
multiple substrates
Prior art date
Application number
PCT/KR2009/007004
Other languages
English (en)
French (fr)
Other versions
WO2010067974A2 (ko
Inventor
황희
허필웅
서태욱
박상준
이호영
김영준
Original Assignee
주식회사 아이피에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 아이피에스 filed Critical 주식회사 아이피에스
Publication of WO2010067974A2 publication Critical patent/WO2010067974A2/ko
Publication of WO2010067974A3 publication Critical patent/WO2010067974A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 기판에 박막이 균일한 두께로 증학될 수 있으며, 샤워헤드를 용이하게 재구성할 수 있도록 구조가 개선된 복수기판 처리장치에 관한 것이다. 본 발명에 따른 복수기판 처리장치는 내부에 공정 공간이 형성되어 있는 챔버와, 챔버의 공정 공간에 설치되며, 상면의 둘레 방향을 따라 기판이 안착되는 복수의 안착부가 마련되어 있는 기판 지지대와, 기판 지지대의 상측에 방사형으로 배치되며, 기판을 향하여 원료가스를 분사하는 복수의 원료가스분사유닛을 가지는 샤워헤드를 구비하되, 원료가스분사유닛에는, 기판 지지대의 중앙으로부터 가장자리 쪽으로 갈수록 원료가스의 분사량이 증가되도록 원료가스가 분사되는 복수의 노즐이 마련되어 있다.
PCT/KR2009/007004 2008-12-10 2009-11-26 복수기판 처리장치 WO2010067974A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080125368A KR101165615B1 (ko) 2008-12-10 2008-12-10 복수기판 처리장치
KR10-2008-0125368 2008-12-10

Publications (2)

Publication Number Publication Date
WO2010067974A2 WO2010067974A2 (ko) 2010-06-17
WO2010067974A3 true WO2010067974A3 (ko) 2010-08-05

Family

ID=42243165

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/007004 WO2010067974A2 (ko) 2008-12-10 2009-11-26 복수기판 처리장치

Country Status (3)

Country Link
KR (1) KR101165615B1 (ko)
TW (1) TWI382877B (ko)
WO (1) WO2010067974A2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101108879B1 (ko) 2009-08-31 2012-01-30 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR101589255B1 (ko) * 2010-07-14 2016-01-27 주식회사 원익아이피에스 박막 증착 장치
KR101804127B1 (ko) * 2011-01-28 2018-01-10 주식회사 원익아이피에스 박막 증착 방법
CN103074602A (zh) * 2012-01-21 2013-05-01 光达光电设备科技（嘉兴）有限公司 化学气相沉积设备的反应腔室
TW201437421A (zh) * 2013-02-20 2014-10-01 Applied Materials Inc 用於旋轉料架原子層沉積之裝置以及方法
US9464353B2 (en) * 2013-11-21 2016-10-11 Wonik Ips Co., Ltd. Substrate processing apparatus
KR102058057B1 (ko) * 2015-02-17 2020-01-23 주식회사 원익아이피에스 웨이퍼 처리장치 및 방법
KR102420015B1 (ko) 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
KR102462931B1 (ko) 2015-10-30 2022-11-04 삼성전자주식회사 가스 공급 유닛 및 기판 처리 장치
KR102293135B1 (ko) * 2016-06-01 2021-08-26 주성엔지니어링(주) 기판 처리장치
KR102072575B1 (ko) * 2019-01-31 2020-02-03 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR102205349B1 (ko) * 2020-01-28 2021-01-20 주성엔지니어링(주) 기판 처리 장치
FI130861B1 (fi) * 2020-10-12 2024-04-26 Beneq Oy Atomikerroskasvatuslaitteisto ja menetelmä
CN113725061A (zh) * 2021-09-01 2021-11-30 长鑫存储技术有限公司 晶圆处理装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100532949B1 (ko) * 2003-03-12 2005-12-02 주식회사 하이닉스반도체 플라즈마 어시스티브 배치 타입 원자층증착 장치
KR20060025337A (ko) * 2004-09-16 2006-03-21 삼성전자주식회사 원자층 증착 장치
KR20080078310A (ko) * 2007-02-23 2008-08-27 주성엔지니어링(주) 가스 분사 장치 및 이를 구비하는 기판 처리 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100722848B1 (ko) * 2006-07-19 2007-05-30 주식회사 아이피에스 박막증착장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100532949B1 (ko) * 2003-03-12 2005-12-02 주식회사 하이닉스반도체 플라즈마 어시스티브 배치 타입 원자층증착 장치
KR20060025337A (ko) * 2004-09-16 2006-03-21 삼성전자주식회사 원자층 증착 장치
KR20080078310A (ko) * 2007-02-23 2008-08-27 주성엔지니어링(주) 가스 분사 장치 및 이를 구비하는 기판 처리 장치

Also Published As

Publication number Publication date
TW201029748A (en) 2010-08-16
KR101165615B1 (ko) 2012-07-17
KR20100066874A (ko) 2010-06-18
WO2010067974A2 (ko) 2010-06-17
TWI382877B (zh) 2013-01-21

Similar Documents

Publication Publication Date Title
WO2010067974A3 (ko) 복수기판 처리장치
WO2011031556A3 (en) Gas distribution showerhead and method of cleaning
WO2012096529A3 (ko) 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
WO2010065473A3 (en) Gas distribution blocker apparatus
WO2012118955A3 (en) Apparatus and process for atomic layer deposition
WO2012027009A3 (en) Gas distribution showerhead with high emissivity surface
PL1952183T3 (pl) Sposób powlekania artykułu optycznego antyzabrudzeniową wierzchnią powłoką przez próżniowe naparowanie
WO2009154889A3 (en) Gas distribution showerhead skirt
WO2007140425A3 (en) Process chamber for dielectric gapfill
WO2012096466A3 (ko) 박막 증착 장치 및 이를 포함한 기판 처리 시스템
WO2020089180A9 (de) Beschichtungsvorrichtung, prozesskammer, sowie verfahren zum beschichten eines substrats und substrat beschichtet mit zumindest einer materialschicht
WO2011087698A3 (en) Pecvd multi-step processing with continuous plasma
WO2011159615A3 (en) Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
WO2008103668A3 (en) Silane coating compositions, coating systems, and methods
TW200609377A (en) Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas
WO2011029096A3 (en) Plasma enhanced chemical vapor deposition apparatus
WO2011034751A3 (en) Hot wire chemical vapor deposition (cvd) inline coating tool
WO2010132716A3 (en) Anodized showerhead
WO2008106545A3 (en) Pecvd process chamber backing plate reinforcement
WO2008117482A1 (ja) 真空成膜装置用部品及び真空成膜装置
WO2009102564A3 (en) Substrate coating apparatus having a solvent vapor emitter
WO2012036499A3 (ko) 박막 증착 장치
WO2012036908A3 (en) Spray deposition module for an in-line processing system
GB2437235A (en) Method and apparatus for producing a coating of substrate
EA201290598A1 (ru) Устройство и способ для покрытия подложки

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09832060

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09832060

Country of ref document: EP

Kind code of ref document: A2